KR101762059B1 - EUV pellicle structure, and method for manufacturing same - Google Patents
EUV pellicle structure, and method for manufacturing same Download PDFInfo
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- KR101762059B1 KR101762059B1 KR1020160004118A KR20160004118A KR101762059B1 KR 101762059 B1 KR101762059 B1 KR 101762059B1 KR 1020160004118 A KR1020160004118 A KR 1020160004118A KR 20160004118 A KR20160004118 A KR 20160004118A KR 101762059 B1 KR101762059 B1 KR 101762059B1
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- cooling structure
- pellicle
- pellicle membrane
- euv
- heat
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- 238000004519 manufacturing process Methods 0.000 title abstract description 47
- 239000012528 membrane Substances 0.000 claims abstract description 198
- 238000001816 cooling Methods 0.000 claims abstract description 165
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
Preparing a pellicle membrane in which a plurality of EUV (Extreme Ultraviolet) permeable layers and a heat-releasing layer are alternately laminated, and heating the pellicle membrane from the pellicle membrane on an exposed sidewall of the heat- A method of manufacturing an EUV pellicle structure including the step of disposing an absorbing cooling structure can be provided.
Description
The present invention relates to an EUV pellicle structure and a manufacturing method thereof, and more particularly to an EUV pellicle structure including a pellicle membrane having a heat-releasing layer inserted therein and a cooling structure for absorbing and dissipating heat from the heat- Lt; / RTI >
As the circuit line width of a semiconductor device is rapidly miniaturized, there is a limitation in forming a fine pattern with a liquid immersion ArF exposure apparatus using a light source of a 193 nm wavelength band currently used. In order to form a fine pattern without improving the light source and the exposure equipment, techniques such as double exposure or quadruple exposure have been applied. However, in the production of semiconductor devices where mass production is important, an increase in the number of processes, an increase in the process price, And a decrease in the number of sheets.
To solve these problems, a next-generation exposure apparatus using extreme ultraviolet lithography using an extreme ultraviolet ray having a wavelength of 13.5 nm is being developed. Reflective reticles, such as mirrors, are used instead of conventional transmissive reticles because light from a 13.5 nm wavelength used in extreme ultraviolet lithography techniques is absorbed by almost all materials. If impurities such as dust or foreign matter adhere to the reticle, light is absorbed or reflected due to the impurities, so that the transferred pattern is damaged, resulting in a problem that performance or yield of a semiconductor device, a liquid crystal display plate, etc. is lowered . Therefore, a method of attaching a pellicle to the surface of the reticle is carried out to prevent impurities from adhering to the surface of the reticle. For this reason, researches on the development of pellicles having high transmittance and thin thickness characteristics against extreme ultraviolet rays are actively conducted.
For example, Korean Patent Registration No. KR1552940B1 (Application No. KR20130157275A, Applicant: Samsung Electronics Co., Ltd.) discloses a method for producing a graphite-containing thin film having a high tensile strength with high EUV permeability with a pellicle film for extreme ultraviolet lithography .
In order to improve the process efficiency of the semiconductor manufacturing process, there is a continuing research to apply a high-power light source to extreme ultraviolet lithography exposure equipment. When a high-power light source is used, the temperature of the pellicle membrane rapidly increases, which causes bowing of the pellicle membrane, which may interfere with the pattern shape or destroy the pellicle membrane. Therefore, it is necessary to study a method of solving the thermal deformation problem of the pellicle membrane due to the increase of the temperature of the pellicle membrane.
SUMMARY OF THE INVENTION The present invention provides a method of manufacturing an EUV pellicle structure having improved heat dissipation efficiency.
It is another object of the present invention to provide a method of manufacturing an EUV pellicle structure with improved permeability to EUV.
It is another object of the present invention to provide a method of manufacturing an EUV pellicle structure with reduced processing time and process cost.
It is another object of the present invention to provide a method of manufacturing an EUV pellicle structure that is easy to mass-produce an EUV mask or a reticle.
It is another object of the present invention to provide a method of manufacturing an EUV pellicle structure that is easy to produce in full-size.
The technical problem to be solved by the present invention is not limited to the above.
In order to solve the above-mentioned technical problems, the present invention provides a method of manufacturing an EUV pellicle structure.
According to one embodiment, the method of manufacturing an EUV pellicle structure includes the steps of preparing a pellicle membrane in which a plurality of EUV (Extreme Ultraviolet) permeable layers and a heat release layer are alternately laminated, and the heat releasing layer of the pellicle membrane And disposing a cooling structure that absorbs heat from the pellicle membrane on the exposed sidewall.
According to one embodiment, the cooling structure comprises: first and second portions extending opposite each other in a first direction; and third and fourth portions extending in opposing directions in a second direction intersecting the first direction, Wherein the first to fourth portions are comprised of one body and the step of disposing the cooling structure may include inserting the pellicle membrane into the integral cooling structure.
According to one embodiment, the cooling structure further includes an inwardly protruding receiving portion surrounded by the first to fourth portions, and the step of disposing the cooling structure includes disposing the cooling structure on the receiving portion of the cooling structure, And inserting the pellicle membrane into the cooling structure so that the membrane is disposed.
According to one embodiment, the cooling structure comprises first and second segments extending in opposition to each other in a first direction, and third and fourth segments extending opposite each other in a second direction intersecting the first direction, And wherein the step of disposing the cooling structure may include attaching the first through fourth segments independently to the pellicle membrane.
According to one embodiment, the cooling structure further includes an inwardly protruding receiving portion surrounded by the first through fourth segments, and the step of disposing the cooling structure includes disposing the cooling structure on the receiving portion of the cooling structure, And inserting the pellicle membrane into the cooling structure so that the membrane is disposed.
According to one embodiment, the heat-releasing layer transfers heat absorbed from the EUV transmissive layer to the cooling structure, and the cooling structure absorbs heat absorbed from the EUV transmissive layer and the heat- Lt; / RTI >
According to one embodiment, the method of manufacturing the EUV pellicle structure may further comprise preparing a pellicle frame before placing the cooling structure, and attaching the pellicle membrane on the pellicle frame .
According to one embodiment, the method of manufacturing the EUV pellicle structure may include covering the outer surface of the pellicle frame.
In order to solve the above-described technical problem, the present invention provides an EUV pellicle structure.
According to one embodiment, the EUV pellicle structure comprises a pellicle membrane in which a plurality of EUV (Extreme Ultraviolet) permeable layers and a heat release layer are alternately laminated, and a sidewall on which the heat release layer of the pellicle membrane is exposed, And a cooling structure surrounding the pellicle membrane and absorbing heat from the pellicle membrane.
According to one embodiment, the cooling structure may include an inner surface receiving heat from the heat releasing layer in direct contact with the heat releasing layer of the pellicle membrane, and an outer surface releasing heat to the outside have.
According to one embodiment, the outer surface of the cooling structure may include one having a protruded pattern shape.
According to one embodiment, the cooling structure may further comprise a receiving portion led to the inside of the cooling structure in which the pellicle membrane is disposed, and the pellicle membrane may be disposed on the receiving portion.
According to one embodiment, the EUV pellicle structure may further include a pellicle frame supporting the pellicle membrane and surrounded by the cooling structure.
According to an embodiment of the present invention, there is provided a method of manufacturing a pellicle membrane, comprising the steps of: preparing a pellicle membrane in which a plurality of EUV permeable layers and a heat releasing layer are alternately laminated; And a method of manufacturing the EUV pellicle structure.
First, when the EUV transmissive layer including a substance with a low extinction coefficient is used, since the absorptivity of the EUV transmissive layer with respect to EUV is small, it is possible to manufacture the EUV transmissive layer having a relatively high transmissivity even though it has a relatively thick thickness . In addition, when the heat-releasing layer including a material having a high thermal conductivity is used, it is possible to manufacture the pellicle membrane in which the thermal stress concentrated on the EUV exposed portion of the pellicle membrane is reduced and the thermal durability is improved. Thus, according to the embodiment of the present invention, a method for producing the pellicle membrane excellent in permeability to EUV, mechanical strength, and thermal stability can be provided.
Also, a protruding pattern may be formed on the outer surface of the cooling structure including the material having a high emissivity, so that the heat absorbed from the pellicle membrane through the cooling structure may be easily radiated.
In addition, according to an embodiment of the present invention, the cooling structure may include a receiving portion replacing the role of the pellicle frame supporting the pellicle membrane. Accordingly, the step of attaching the pellicle membrane on the pellicle frame can be omitted, so that the processing time and the process cost can be reduced.
In addition, when the cooling structure includes the first to fourth segments of the separated structure including the accommodation portion, and the first to fourth segments are independently attached to the pellicle membrane, the edge portion of the pellicle membrane The cooling structure can be attached more closely to the cooling structure and the contact efficiency between the cooling structure and the pellicle membrane can be improved. Accordingly, the heat release efficiency of heat accumulated inside the pellicle membrane through the cooling structure to the outside can be improved, and the EUV pellicle structure improved in thermal stability can be provided.
1 is a perspective view of an EUV pellicle structure according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view of the EUV pellicle structure according to the first embodiment of the present invention taken along line A-B in FIG. 1;
3 is a flowchart illustrating a method of manufacturing an EUV pellicle structure according to a first embodiment of the present invention.
4 is a view for explaining a method of manufacturing an EUV pellicle structure according to a first embodiment of the present invention.
5 is a perspective view illustrating an EUV pellicle structure according to a second embodiment of the present invention.
6 is a view for explaining a method of manufacturing an EUV pellicle structure according to a second embodiment of the present invention.
7 is a perspective view of an EUV pellicle structure according to a third embodiment of the present invention.
8 is a cross-sectional view of an EUV pellicle structure according to a third embodiment of the present invention.
9 is a view for explaining a method of manufacturing an EUV pellicle structure according to a third embodiment of the present invention.
10 is a perspective view illustrating an EUV pellicle structure according to a fourth embodiment of the present invention.
11 is a view for explaining a method of manufacturing an EUV pellicle structure according to a fourth embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.
Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.
The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof.
In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
FIG. 1 is a perspective view of an EUV pellicle structure according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the EUV pellicle structure according to the first embodiment of the present invention, taken along line A-B in FIG.
Referring to FIGS. 1 and 2, an
The
According to one embodiment, the heat-releasing
In the case of the heat-releasing
In addition, the heat-emitting
As described above, when the
According to one embodiment, the
The cooling structure (10) comprises a first portion (11) and a second portion (12) extending opposite to each other in a first direction, and extending in a second direction intersecting the first direction A
According to one embodiment the cooling
According to one embodiment, the outer surface of the cooling
As described above, the heat absorbed from the
The
Hereinafter, a method of manufacturing an EUV pellicle structure according to a first embodiment of the present invention will be described.
FIG. 3 is a flow chart for explaining a method of manufacturing an EUV pellicle structure according to a first embodiment of the present invention, and FIG. 4 is a view for explaining a method of manufacturing an EUV pellicle structure according to the first embodiment of the present invention.
Referring to FIGS. 3 and 4, the
As described above, when the
The
The cooling
4, the
As described above, the heat absorbed from the
Hereinafter, an EUV pellicle structure according to a second embodiment of the present invention will be described.
The
5 is a perspective view illustrating an EUV pellicle structure according to a second embodiment of the present invention. 5 and 5, the overlapping portions of the EUV pellicle structure according to the first embodiment of the present invention shown in FIGS. 1 and 2 will be described with reference to FIGS. 1 and 2 . Sectional view of the EUV pellicle structure according to the second embodiment of the present invention is the same as the sectional view of the EUV pellicle structure according to the first embodiment of the present invention,
Referring to FIG. 5, the
The
The
According to one embodiment, the first to
As described above, when the first to
The
Hereinafter, a method of manufacturing the EUV pellicle structure according to the second embodiment of the present invention will be described.
6 is a view for explaining a method of manufacturing an EUV pellicle structure according to a second embodiment of the present invention. In the description of the EUV pellicle structure according to the second embodiment of the present invention shown in FIG. 6, the overlapping portions of the first embodiment of the present invention shown in FIGS. 1 to 4 will be described with reference to FIGS. 1 to 4 . The flow chart for explaining the method of manufacturing the EUV pellicle structure according to the second embodiment of the present invention is the same as the flow chart of the EUV pellicle structure according to the first embodiment of the present invention, and therefore, reference is made to FIG.
Referring to FIGS. 3 and 5, the
The
The
Hereinafter, an EUV pellicle structure according to a third embodiment of the present invention will be described.
In the
FIG. 7 is a perspective view of an EUV pellicle structure according to a third embodiment of the present invention, and FIG. 8 is a sectional view of an EUV pellicle structure according to a third embodiment of the present invention. 7 and 8, the overlapping portion of the EUV pellicle structure according to the third embodiment of the present invention, which is the same as the first embodiment of the present invention shown in FIGS. 1 and 2, 2 will be referred to.
7 and 8, an
The
The cooling
In addition, according to one embodiment, the cooling
Hereinafter, a method of manufacturing the EUV pellicle structure according to the third embodiment of the present invention will be described.
9 is a view for explaining a method of manufacturing an EUV pellicle structure according to a third embodiment of the present invention. The method of manufacturing the EUV pellicle structure according to the third embodiment of the present invention shown in FIG. 9 will now be described with reference to FIGS. 3 and 4 for the parts overlapping with the first embodiment of the present invention shown in FIGS. Referring to FIG. 3 is a flowchart of a method of manufacturing an EUV pellicle structure according to a third embodiment of the present invention, which is the same as the flow chart of the EUV pellicle structure according to the first embodiment of the present invention.
Referring to FIG. 9, the
The cooling
According to a third embodiment of the present invention, as described with reference to FIGS. 7 and 8, the cooling
When the
In addition, according to the first and second embodiments of the present invention, the cooling
Hereinafter, an EUV pellicle structure according to a fourth embodiment of the present invention will be described.
Like the
10 is a perspective view illustrating an EUV pellicle structure according to a fourth embodiment of the present invention. In the following description of the EUV pellicle structure according to the fourth embodiment of the present invention shown in FIG. 10, the overlapping portions of the second and third embodiments of the present invention shown in FIGS. 5 to 8 will be described with reference to FIGS. Referring to FIG. Sectional view of the EUV pellicle structure according to the fourth embodiment of the present invention is the same as the sectional view of the EUV pellicle structure according to the third embodiment of the present invention,
Referring to FIG. 10, the
The
The
The first to
As described above, when the first to
When the
Hereinafter, a method of manufacturing an EUV pellicle structure according to a fourth embodiment of the present invention will be described.
11 is a view for explaining a method of manufacturing an EUV pellicle structure according to a fourth embodiment of the present invention. 11, a method of manufacturing an EUV pellicle structure according to a fourth embodiment of the present invention will be described. In the second, third, and fourth embodiments of the present invention shown in FIGS. 5 to 10, 5 to 10 will be referred to. A flow chart for explaining a method of manufacturing an EUV pellicle structure according to a fourth embodiment of the present invention is the same as that of the EUV pellicle structure according to the first embodiment of the present invention, and therefore, reference is made to FIG.
Referring to FIG. 11, the
The
As described above, when the first to
When the
Unlike the embodiments of the present invention described above, conventionally, a single layer of silicon thin film is fabricated using silicon having a high transmittance to EUV for manufacturing a pellicle for EUV lithography. In this case, there is a disadvantage that the silicon thin film is physically deformed and destroyed because of its low transmittance to EUV, but its mechanical strength is weak due to its thin thickness. On the other hand, when the thickness of the silicon thin film is increased, there is a problem that the transmittance of the silicon thin film is reduced to EUV.
In addition, in order to solve the above-described problems, when a support structure for supporting the silicon thin film is added to fabricate a pellicle structure for EUV lithography, the distribution of EUV light sources irradiated by the support structure is disadvantageous.
However, as described above, according to an embodiment of the present invention, there is provided a method of manufacturing a pellicle membrane, comprising the steps of preparing a
First, when the
In addition, a protruding pattern is formed on the outer surface of the cooling
In addition, according to an embodiment of the present invention, the
The
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.
10, 10a: cooling structure
11: First part
12: second part
13: third part
14: fourth part
11s: 1st segment
12s: 2nd segment
13s: third segment
14s: fourth segment
18:
20: Pellicle membrane
23: EUV transmission layer
25: Heat release layer
40: Pellicle frame
100, 100a, 200, 200a: EUV pellicle structure
Claims (13)
Disposing a cooling structure that absorbs heat from the pellicle membrane on an exposed sidewall of the heat dissipating layer of the pellicle membrane,
Wherein the heat-releasing layer is disposed between the plurality of EUV transmissive layers, and the edge side of the heat-releasing layer is in direct contact with the cooling structure.
Wherein the cooling structure includes first and second portions that extend opposite each other in a first direction and third and fourth portions that extend opposite each other in a second direction that intersects the first direction,
Wherein the first to fourth parts are constituted by one body,
The step of disposing the cooling structure comprises:
And inserting the pellicle membrane into any cooling structure.
Wherein the cooling structure further includes a receiving portion protruding inwardly surrounded by the first to fourth portions,
The step of disposing the cooling structure comprises:
Inserting the pellicle membrane into the cooling structure such that the pellicle membrane is disposed on the receiving portion of the cooling structure.
The cooling structure includes first and second segments extending opposite each other in a first direction and third and fourth segments extending opposite each other in a second direction intersecting the first direction, ,
The step of disposing the cooling structure comprises:
And attaching the first to fourth segments independently to the pellicle membrane.
Wherein the cooling structure further includes an accommodating portion protruding inwardly surrounded by the first through fourth segments,
The step of disposing the cooling structure comprises:
Inserting the pellicle membrane into the cooling structure such that the pellicle membrane is disposed on the receiving portion of the cooling structure.
Wherein the heat releasing layer conveys the heat absorbed from the EUV transmissive layer to the cooling structure,
Wherein the cooling structure includes dissipating heat absorbed from the EUV transmissive layer and the heat evacuation layer to the outside.
Before the cooling structure is disposed,
Preparing a pellicle frame; And
Further comprising attaching the pellicle membrane on the pellicle frame.
Wherein the cooling structure covers an outer surface of the pellicle frame.
A cooling structure disposed on an exposed sidewall of the pellicle membrane to surround the pellicle membrane and to absorb heat from the pellicle membrane,
Wherein the heat-releasing layer is disposed between the plurality of EUV transmissive layers, and the edge side of the heat-releasing layer is in direct contact with the cooling structure.
Wherein the cooling structure includes an inner surface receiving heat directly from the heat releasing layer in direct contact with the heat releasing layer of the pellicle membrane and an outer surface releasing heat to the outside.
Wherein an outer surface of the cooling structure has a protruded pattern shape.
Wherein the cooling structure further comprises a receiving portion led to the inside of the cooling structure in which the pellicle membrane is disposed,
Wherein the pellicle membrane is disposed on the receiving portion.
Further comprising a pellicle frame supporting the pellicle membrane and surrounded by the cooling structure.
Priority Applications (2)
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KR1020160004118A KR101762059B1 (en) | 2016-01-13 | 2016-01-13 | EUV pellicle structure, and method for manufacturing same |
PCT/KR2017/000262 WO2017122975A1 (en) | 2016-01-13 | 2017-01-09 | Euv pellicle structure and method for manufacturing same |
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KR1020160004118A KR101762059B1 (en) | 2016-01-13 | 2016-01-13 | EUV pellicle structure, and method for manufacturing same |
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KR101762059B1 true KR101762059B1 (en) | 2017-07-31 |
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JP6787851B2 (en) * | 2017-08-08 | 2020-11-18 | エア・ウォーター株式会社 | Pellicle and method of manufacturing pellicle |
KR102512243B1 (en) * | 2020-12-16 | 2023-03-21 | 주식회사 에프에스티 | Porous Pellicle Frame for EUV(extreme ultraviolet) Lithography |
KR20230058782A (en) * | 2021-10-25 | 2023-05-03 | 한국전자기술연구원 | Pellicle for extreme ultraviolet lithography based on yttrium carbide |
Citations (1)
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US20050048376A1 (en) * | 2003-08-26 | 2005-03-03 | Intel Corporation | Mounting a pellicle to a frame |
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JPH02302757A (en) * | 1989-05-17 | 1990-12-14 | Fujitsu Ltd | Pellicle having cooling function |
US7264853B2 (en) * | 2003-08-26 | 2007-09-04 | Intel Corporation | Attaching a pellicle frame to a reticle |
US7355680B2 (en) * | 2005-01-05 | 2008-04-08 | International Business Machines Corporation | Method for adjusting lithographic mask flatness using thermally induced pellicle stress |
CN105229776B (en) * | 2013-05-24 | 2019-05-03 | 三井化学株式会社 | Protect membrane module and the EUV exposure device containing it |
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US20050048376A1 (en) * | 2003-08-26 | 2005-03-03 | Intel Corporation | Mounting a pellicle to a frame |
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