KR101756967B1 - Manufacturing Method of Fiber-type OLED and Fiber-type OLED thereby - Google Patents
Manufacturing Method of Fiber-type OLED and Fiber-type OLED thereby Download PDFInfo
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- KR101756967B1 KR101756967B1 KR1020150183680A KR20150183680A KR101756967B1 KR 101756967 B1 KR101756967 B1 KR 101756967B1 KR 1020150183680 A KR1020150183680 A KR 1020150183680A KR 20150183680 A KR20150183680 A KR 20150183680A KR 101756967 B1 KR101756967 B1 KR 101756967B1
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- light emitting
- organic light
- electrode
- emitting device
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- H01L51/5287—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
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- H01L51/5203—
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- H01L51/56—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A method of fabricating an organic light emitting device in the form of a fiber in which a flexible substrate, a first electrode, an organic light emitting layer, and a second electrode are laminated in order, wherein a metal auxiliary electrode in the form of a long fiber is embedded, A first step of fabricating a large-area organic light emitting device equipped with a light emitting device; And a second step of cutting between the patterns of the fabricated organic light emitting device. The fabrication method according to the present invention makes it possible to manufacture a fiber-type organic light emitting device in which the upper metal electrode is not broken during the process of cutting the large area organic light emitting device and the shortage caused by the breakage of the metal electrode .
Description
A large-area organic light-emitting device is fabricated by cutting a large-area organic light-emitting device to manufacture a fiber-type organic light-emitting device, and then cutting the patterned metal electrode, To a method of manufacturing a fiber type organic light emitting device capable of preventing breakage of a metal electrode occurring during a cutting process and preventing a short circuit caused by the breakage, and a fiber type organic light emitting device fabricated therefrom.
BACKGROUND ART [0002] Researches on fiber-type electronic devices have been actively conducted because of the possibility that the organic light emitting device or the solar cell can be applied to a product such as a garment curtain or a tent bag by weaving the organic light emitting device or the solar cell.
For example, KR2014-0123555A, JP2002-151708A, US2012-0279561A1, and the like discloses a method of manufacturing a light emitting device, such as a fiber type or hollow fiber type OLED in which a base layer of an OLED including a first electrode, a light emitting layer, Fibers are disclosed. In KR2014-0065274A, a cross section of the fiber is composed of a sea-island type composite yarn, and a portion of the fibers constituting the casting portion is used as a hole-injecting filament and the remaining fibers are used as an electron injecting filament. An organic solar cell in which a material is added is disclosed. However, the above-mentioned prior arts have difficulties in coating each layer on a fiber by stacking layers on a fibrous substrate to form an OLED or a solar cell, and in particular, it is difficult to uniformly form the thickness of a coated laminate There is a problem.
As a method for improving the above problems, KR1335913B1, KR1415168B1, and KR1333714B1 disclose a large-area OLED or solar cell, which is then cut at regular intervals to produce a fiber. In the methods disclosed in the above patent documents, a fiber-type device can be manufactured by manufacturing a large-area device having a uniform coating thickness once and then cutting the same. At this time, the OLED or the solar cell can be fabricated on a flexible substrate And the metal interconnection functions as an auxiliary electrode to lower the electrode resistance and to scatter light, thereby increasing the light efficiency.
However, in the improved methods, particularly, in the production of the fibrous organic light emitting device in which the light emitting efficiency is important, the cutting of the large area device can break some of essential components of the light emitting device such as the metal electrode, And the breakage may cause contact between the upper electrode and the lower electrode, which may cause a short circuit. Therefore, further improvement is still required
It is an object of the present invention to provide a method of manufacturing an organic light emitting device having a large area by cutting a large area organic light emitting device, And a method of manufacturing the organic light emitting device of the present invention.
Another object of the present invention is to provide a fiber type organic light emitting device manufactured by the above method and having excellent luminous efficiency.
A method of fabricating an organic light emitting device in the form of a fiber in which a flexible substrate, a first electrode, an organic light emitting layer, and a second electrode are laminated in order, wherein a metal auxiliary electrode in the form of a long fiber is embedded, A first step of fabricating a large-area organic light emitting device equipped with a light emitting device; And a second step of cutting between the patterns of the fabricated organic light emitting device.
The line width of the linear pattern is preferably 0.01 to 5 mm.
The number of the metal auxiliary electrodes per unit fiber is preferably 2 or more.
The line width of the metal auxiliary electrode is preferably 0.5 to 1,000 mu m.
It is preferable that the cutting is performed by a plasma etching method.
The present invention also provides a fiber-type organic light emitting device manufactured by the above method and having a flexible substrate in which a metal auxiliary electrode in the form of a long fiber is embedded, a first electrode, an organic light emitting layer, and a patterned second electrode in this order .
According to the manufacturing method of the present invention, since the cutting performed after the second electrode is linearly patterned is performed between the patterned second electrodes, an advantage that the upper second electrode (metal electrode) is not damaged during the cutting process . In addition, there is no shortage due to contact between the upper electrode and the lower electrode during the cutting process.
According to the manufacturing method of the present invention, a plurality of
In addition, by using the plasma etching technique for cutting, it is possible to manufacture a fiber-type organic light-emitting device having narrower line width and higher luminescence efficiency as compared with, for example, conventional cutting such as mechanical cutting can do.
1 is a block diagram illustrating a method of manufacturing an organic light emitting device in the form of a fiber according to the present invention.
2A and 2B are schematic cross-sectional and top views of a large-area organic light-emitting device fabricated in step S1 of the method of the present invention, and FIG. 2C is a schematic cross- FIG.
FIG. 3 is a schematic view of a method for manufacturing a fiber-type organic light emitting device by cutting a large-area organic light emitting device in the manufacturing method according to the present invention.
Fig. 4 is a schematic diagram for explaining the efficiency improvement of the organic light emitting diode according to the plasma etching.
5 is a schematic diagram of patterns of the second electrodes fabricated in step S1 of the embodiments of the present invention.
FIG. 6 is a micrograph of auxiliary electrodes (before plasma etching) of the large area organic light emitting diodes manufactured in step S1 of the embodiment of the present invention.
FIG. 7 is a graph showing voltage-current characteristics 7a and current density-current efficiency characteristics 7b for the fiber-type wet light emitting diodes fabricated in Examples 1 to 3 and Comparative Examples of the present invention.
8 is a photograph of the fiber type organic light emitting diode fabricated in Example 1 of the present invention in which a voltage is applied and light is emitted.
Hereinafter, a manufacturing method according to the present invention will be described in detail with reference to the drawings.
Figure 1 is a block diagram illustrating each step of the manufacturing method according to the present invention. The present invention relates to a method of manufacturing a fiber-type organic light emitting device in which a flexible substrate having a metal-made auxiliary electrode in a long fiber form, a first electrode, an organic light emitting layer and a second electrode are sequentially laminated, A first step (S1) of fabricating a large area organic light emitting device having a second electrode in the form of a linear pattern; And a second step S2 of cutting off the pattern of the fabricated organic light emitting diode.
[Step 1]
2A and 2B, the large area organic light emitting device manufactured in the first step includes a
In the manufacturing method of the present invention, the large area organic light emitting device is formed by stacking a
In step S 1 - 1, a metal interconnection as the
The material of the
A metal interconnection functioning as the
The metal wiring forming the
On the other hand, the formation of the metal wiring can be appropriately selected by known methods such as inkjet printing, gravure printing, gravure offset, aerosol printing, screen printing, electroplating, vacuum deposition or photolithography. At this time, the line width of the metal wiring to be formed is preferably 0.5 to 1000 mu m. If the width of the metal wiring is less than 0.5 mu m, a complicated process for forming a fine pattern is required, and resistance of the metal wiring increases. When the width exceeds 1000 mu m, the transmittance decreases.
One of the features of the manufacturing method of the present invention is that the
When the flexible transparent polymer solution coated on the
Thereafter, a glass substrate is removed, and a flexible substrate having a metal wiring embedded therein and a laminate formed of a first electrode (anode layer) are prepared.
Next, in the detailed step S1-2, the organic
In the detailed step S1-3, the
Another feature of the manufacturing method of the present invention is that the second electrode is formed in a linear pattern shape having a line width of 0.01 to 5 mm. Patterning can be performed by methods known in the art, such as, for example, evaporation of the second electrode or masking during coating.
The pattern is patterned in a shape corresponding to the second electrode in the organic light emitting device of the individual fiber type in which the patterns are cut and finally produced in the second step. The length " of the linear pattern corresponds to the length direction of the
An advantage of patterning the second electrode is that it can be finely formed with the line width of the second electrode of the fiber-type organic light emitting device in combination with the plasma etching described later.
[Second Step]
The second step in the manufacturing method of the present invention is a step of cutting the obtained large area organic light emitting device to produce a fibrous organic light emitting device. By this cutting, the large-area organic light emitting device is divided into a fiber form (see FIG. 3).
The cutting is performed along the longitudinal direction of the
As the cut is performed between the patterned second electrodes, there is an advantage that the upper second electrode (metal electrode) is not broken during the cutting process. In addition, there is no shortage due to contact between the upper electrode and the lower electrode during the cutting process.
In the present invention, the cutting can be performed by a technique such as, for example, slitting, laser cutting, plasma etching, etc., but is preferably performed using plasma etching. Cutting using plasma etching refers to cutting using an accelerated plasma jet.
One advantage of employing plasma etching as a cutting means in manufacturing a fiber-type organic light emitting device by cutting a large area organic light emitting device is that the second electrode formed on the large area organic light emitting device is used as a mask, It is possible to etch only between the upper electrodes and thus to fabricate the fibrous organic light emitting device in the form of a fiber having a narrow width according to the shape of the upper electrode.
Another advantage of employing plasma etching is that organic light emitting devices in the form of fibers produced in comparison with conventional cuts, such as, for example, mechanical cutting, exhibit higher luminous efficiency. Fig. 4 is a schematic diagram for explaining the efficiency improvement of the organic light emitting diode according to the plasma etching. In the conventional organic light emitting diode, light emitted through the
Hereinafter, a method of manufacturing a fiber-type organic light emitting device of the present invention will be described in detail with reference to examples. The following examples are intended to illustrate the present invention, but the scope of the present invention is not limited by the following examples.
≪ Example 1 > Preparation of fiber-type organic light emitting device using solution process 1
(1) Step S1: Fabrication of large area organic light emitting diode
Step S1-1: A laminate in which the Ag metal
At this time, the flexible substrate on which the metal auxiliary electrode is embedded is formed by coating a conductive polymer PEDOT: PSS (poly (3,4-ethylenedioxythiophene): polystyrene sulfonate)
Step S-2, S-3: A hole transport layer having a thickness of about 400 Å was formed on the surface of the metal support electrode exposed in step S1-1 by using a spin coater in the form of a solution of the conductive polymer.
The hole transport layer formed in the above step was coated on the light emitting layer in a solution state using a spin coater. At this time, the light-emitting layer may include a PVK (poly (9-vinylcarbazole)) light emitting host and a PBD (2- (tert- butylphenyl) -5-biphenylyl-1,3,4-oxadiazole) electron transport layer, TPD 3-methylphenyl) -N, N- diphenyl- [1,1-biphenyl] -4,4-diamine) hole transport layer, Ir (mppy) 3 (tris [2- (p-tolyl) pyridine] iridium (III) green The luminescent dopant materials were mixed and used in a ratio of 0.61: 0.24: 0.09: 0.06.
Then, TPBi (2,2,2- (1,3,5-phenylene) -tris [1-phenyl-1H-benzimidazole]) was thermally deposited on the light emitting layer at a deposition rate of 0.5 to 1 Å / Was formed.
A large area organic light emitting diode was fabricated by sequentially depositing LiF (10 Å) and aluminum (1000 Å) on the electron transporting layer formed above in this order by electron-injecting layer and cathode layer. At this time, a patterned negative electrode layer was formed using a total of sixteen patterned masks having a total area of 50 x 50 mm and a length of 38 mm and a width of 750 m, and the area of the light emitting layer was 18 mm 2 . The shape of the patterned mask is shown in Fig.
(2) Step S2: Cutting Using Plasma Etching
The large-area organic light emitting device fabricated above was cut by plasma etching to produce a fiber-type organic light emitting device as shown in FIG. The process conditions of the plasma etching were as follows: the process pressure of 1.0E- 1 torr, the injection of nitrogen gas (N 2 ) of 32sccm, and the RF power of 200W were applied to cut the flexible substrate produced in step 1 into the width of the light emitting layer. At this time, it has eight metal auxiliary electrodes per one fiber.
≪ Example 2 > Preparation of fiber type organic light emitting device using
(1) Step S1: Fabrication of large area organic light emitting diode
Step S1-1: A laminate was produced in the same manner as in step S1-1 of Example 1, except that a metal auxiliary electrode having a distance of 150 mu m between the metal auxiliary electrodes was formed.
Steps S-2 and S-3: Steps S-2 and S-3 of Example 1 were repeated to produce a large-area organic light emitting device.
(2) Step S2: Cutting Using Plasma Etching
The large area organic light emitting device fabricated in Example 2 was fabricated in the same manner as in Step S2 of Example 1 to fabricate a fiber type organic light emitting device. It has five metal-assisted electrodes per fiber.
≪ Example 3 > Preparation of fiber-type organic light emitting device using solution process 3
(1) Step S1: Fabrication of large area organic light emitting diode
Step S1-1: A laminate was produced in the same manner as in step S1-1 of Example 1, except that a metal auxiliary electrode having a distance of 200 mu m between the metal auxiliary electrodes was formed.
Steps S-2 and S-3: Steps S-2 and S-3 of Example 1 were repeated to produce a large-area organic light emitting device.
(2) Step S2: Cutting Using Plasma Etching
The large area organic light emitting device fabricated in Example 2 was fabricated in the same manner as in Step S2 of Example 1 to fabricate a fiber type organic light emitting device. It has four metal auxiliary electrodes per fiber. FIG. 5 is a micrograph (before plasma etching) of the large area organic light emitting diode manufactured in step S1 of each embodiment.
≪ Comparative Example 1 &
An organic light emitting diode was fabricated in the same manner as in Example 1 except that the metal auxiliary electrode of the fiber type organic light emitting diode using the solution process was not provided.
<Experimental Example 1> Measurement of shape of metal auxiliary electrode in fiber form
In order to observe the surface of the laminate embedded in the metal auxiliary electrode prepared in each of the steps S1-1 of Examples 1, 2 and 3, the shape of the metal auxiliary electrode was confirmed by using an optical microscope, Respectively.
<Experimental Example 2> Characteristic analysis of organic light emitting device of fiber type
The brightness versus applied voltage of the fiber type organic light emitting device fabricated in Examples 1, 2 and 3 and Comparative Example was measured with a Keithley 236 source meter and SpectraColorimeter CS2000 , A voltage-current density graph and a current density-current efficiency graph obtained therefrom are shown in the order of FIGS. 7A and 7B, respectively. FIG. 8 is a photograph of FIG. The distance between the metal auxiliary electrodes of the organic light emitting diode in fiber form, the number of metal auxiliary electrodes per fiber, and the luminous efficiency obtained from the above graphs are summarized in Table 1 below.
As shown in FIGS. 7A to 7B and Table 1, the organic light emitting devices manufactured in Examples 1 to 3 of the present invention had the same current density as that of the device manufactured without the metal auxiliary electrode in Comparative Example 1 , The higher current efficiency can be confirmed. As a result, when the organic light emitting device according to the present invention is cut through the plasma etching process, the metal auxiliary electrode is inserted into the fiber, thereby exhibiting excellent light emission characteristics.
One of the advantages of the organic light emitting device according to the present invention is that it has low leakage current. For example, the organic light emitting diode manufactured in the embodiments shows a current density of 10 -2 mA / cm 2 at -5 V, the organic light emitting diode produced according to the conventional method, that is, a method of preparing a large-area organic light emitting device that is not patterned, and then, by using a knife and the slicing of a fiber-type organic light-emitting
10.
30 ..
32 ..
34.
50 .. Auxiliary electrode
Claims (6)
A first step of fabricating a large area organic light emitting device having a second electrode patterned in a linear pattern having a line width of 0.01 to 5 mm; And
A second step of cutting between the patterns of the organic light emitting device by a plasma etching method along a linear pattern of the second electrode; Type organic light-emitting device.
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