KR101755077B1 - 산화실리콘으로 구성된 영역을 선택적으로 제거하는 방법 및 플라즈마 처리 장치 - Google Patents

산화실리콘으로 구성된 영역을 선택적으로 제거하는 방법 및 플라즈마 처리 장치 Download PDF

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KR101755077B1
KR101755077B1 KR1020140113923A KR20140113923A KR101755077B1 KR 101755077 B1 KR101755077 B1 KR 101755077B1 KR 1020140113923 A KR1020140113923 A KR 1020140113923A KR 20140113923 A KR20140113923 A KR 20140113923A KR 101755077 B1 KR101755077 B1 KR 101755077B1
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KR20150026962A (ko
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아키노리 기타무라
히로토 오타케
에이지 스즈키
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
KR1020140113923A 2013-08-30 2014-08-29 산화실리콘으로 구성된 영역을 선택적으로 제거하는 방법 및 플라즈마 처리 장치 Active KR101755077B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013180267 2013-08-30
JPJP-P-2013-180267 2013-08-30
JP2013256118A JP6086862B2 (ja) 2013-08-30 2013-12-11 酸化シリコンから構成された領域を選択的に除去する方法及びプラズマ処理装置
JPJP-P-2013-256118 2013-12-11

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KR20150026962A KR20150026962A (ko) 2015-03-11
KR101755077B1 true KR101755077B1 (ko) 2017-07-19

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Publication number Priority date Publication date Assignee Title
JP6086862B2 (ja) * 2013-08-30 2017-03-01 東京エレクトロン株式会社 酸化シリコンから構成された領域を選択的に除去する方法及びプラズマ処理装置
JP6438831B2 (ja) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 有機膜をエッチングする方法
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
TWI711716B (zh) * 2017-06-06 2020-12-01 美商應用材料股份有限公司 使用沉積-處理-蝕刻製程之矽的選擇性沉積
US10770305B2 (en) * 2018-05-11 2020-09-08 Tokyo Electron Limited Method of atomic layer etching of oxide
JP2022096079A (ja) * 2020-12-17 2022-06-29 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
US20250239437A1 (en) * 2022-10-11 2025-07-24 Hitachi High-Tech Corporation Plasma processing method
CN120345056A (zh) * 2023-03-17 2025-07-18 株式会社国际电气 蚀刻方法、半导体装置的制造方法、处理装置以及程序

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306671A (en) 1990-07-09 1994-04-26 Mitsubishi Denki Kabushiki Kaisha Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method
US5328558A (en) 1992-03-25 1994-07-12 Tokyo Electron Limited Method for etching an SiO2 film
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film

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Publication number Priority date Publication date Assignee Title
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
JP4124800B2 (ja) 1998-11-11 2008-07-23 東京エレクトロン株式会社 表面処理方法及びその装置
US7877161B2 (en) 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
JP4495471B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4469781B2 (ja) * 2005-07-20 2010-05-26 パナソニック株式会社 固体撮像装置及びその製造方法
JP5229711B2 (ja) * 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
JP5248902B2 (ja) * 2007-10-11 2013-07-31 東京エレクトロン株式会社 基板処理方法
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
JP6086862B2 (ja) * 2013-08-30 2017-03-01 東京エレクトロン株式会社 酸化シリコンから構成された領域を選択的に除去する方法及びプラズマ処理装置
JP6239365B2 (ja) * 2013-12-11 2017-11-29 東京エレクトロン株式会社 シリコン層をエッチングする方法
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306671A (en) 1990-07-09 1994-04-26 Mitsubishi Denki Kabushiki Kaisha Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method
US5328558A (en) 1992-03-25 1994-07-12 Tokyo Electron Limited Method for etching an SiO2 film
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film

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JP2015065393A (ja) 2015-04-09
JP6086862B2 (ja) 2017-03-01
US20150064922A1 (en) 2015-03-05
KR20150026962A (ko) 2015-03-11
US9502537B2 (en) 2016-11-22

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