KR101743205B1 - Vacuum measuring apparatus and method using thermal conductivity of infrared sensor - Google Patents

Vacuum measuring apparatus and method using thermal conductivity of infrared sensor Download PDF

Info

Publication number
KR101743205B1
KR101743205B1 KR1020150137891A KR20150137891A KR101743205B1 KR 101743205 B1 KR101743205 B1 KR 101743205B1 KR 1020150137891 A KR1020150137891 A KR 1020150137891A KR 20150137891 A KR20150137891 A KR 20150137891A KR 101743205 B1 KR101743205 B1 KR 101743205B1
Authority
KR
South Korea
Prior art keywords
thermal conductivity
pressure
infrared sensor
vacuum
degree
Prior art date
Application number
KR1020150137891A
Other languages
Korean (ko)
Other versions
KR20170039006A (en
Inventor
한명수
박안진
신인희
이병일
엄주범
김대현
Original Assignee
한국광기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국광기술원 filed Critical 한국광기술원
Priority to KR1020150137891A priority Critical patent/KR101743205B1/en
Publication of KR20170039006A publication Critical patent/KR20170039006A/en
Application granted granted Critical
Publication of KR101743205B1 publication Critical patent/KR101743205B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/026—Control of working procedures of a pyrometer, other than calibration; Bandwidth calculation; Gain control
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L21/00—Vacuum gauges
    • G01L21/10—Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The present technology discloses a vacuum degree measurement method using the thermal conductivity of an infrared sensor. According to a specific example of the present invention, a pressure sensor for measuring a vacuum gauge is measured by measuring a vacuum degree inside a chip based on a relational expression for resistance and thermal conductivity by a bias, and a relation for thermal conductivity and pressure, It is possible to reduce the manufacturing process and manufacturing cost and to fundamentally reduce the size of the chip and to detect the defect of the infrared sensor based on the degree of vacuum measured using the thermal conductivity and to easily detect the defect of the infrared sensor without adding the equipment have.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an apparatus and a method for measuring a degree of vacuum using thermal conductivity of an infrared sensor,

The present invention relates to an apparatus and a method for measuring a degree of vacuum using thermal conductivity of an infrared sensor, and more particularly, to an infrared sensor having a membrane structure of a bolometer- The present invention relates to a technique for measuring the degree of vacuum of a conventional metal vacuum or wafer level vacuum packaging infrared sensor without a pressure sensor.

The infrared sensor detects the weak infrared ray (heat ray) emitted from the object in front of the night, regardless of the light, and reproduces the image with the image. The night vision of the car, the monitoring of the core facilities, It is a state-of-the-art, high-value-added technology applicable to the field.

The prototype uses a cooler (operating temperature: -196) and a dewar, which is a high vacuum package. On the other hand, the thermal type requires only an electronic cooling module for temperature stabilization, which is operated at room temperature. It is a square type infrared sensor.

The performance of this uncooled infrared sensor is greatly influenced by the degree of vacuum inside the package. Therefore, a vacuum gauge pixel was separately manufactured in the manufacturing process of a conventional uncooled infrared sensor, and the vacuum degree was measured by positioning it beside the sensor chip.

Accordingly, the manufacturing process of the conventional uncooled infrared sensor is complicated and the manufacturing cost is increased when the size of the chip is increased.

Therefore, the present invention proposes a method of removing the pressure sensor for measuring the vacuum gauge by measuring the vacuum degree in the chip based on the relation between the resistance and the thermal conductivity by the bias, the relation between the thermal conductivity and the pressure.

Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method and apparatus for measuring the degree of vacuum in a device based on a relational expression of resistance and a thermal conductivity by a bias, There is provided an apparatus and method for measuring a degree of vacuum using a thermal conductivity of an infrared sensor capable of reducing a manufacturing process and manufacturing cost of an infrared sensor by removing a pressure sensor for measuring a degree of vacuum and fundamentally reducing a size of a chip.

An object of the present invention is to provide an apparatus and a method for measuring the degree of vacuum using the thermal conductivity of an infrared sensor capable of detecting a defect of the infrared sensor based on the degree of vacuum measured using the thermal conductivity.

According to an aspect of the present invention, there is provided an apparatus for measuring a degree of vacuum using thermal conductivity of an infrared sensor,

A thermoelectric cooler for device cooling, a getter for maintaining vacuum, an infrared sensor, and a temperature sensor as one element,

And an operation unit for measuring the degree of vacuum of the infrared sensor based on the behavior of the thermal conductivity due to the resistance variation biased by the infrared sensor and the pressure behavior corresponding to the variation of the thermal conductivity.

Preferably, the operation unit includes a resistance measurement module for measuring a resistance variation of the bias, a thermal conductivity calculation module for calculating a thermal conductivity from a relational expression derived on the basis of the behavior of the thermal conductivity due to the resistance variation, And a vacuum degree predicting module for predicting the vacuum degree of the infrared sensor manufactured from the relational formula derived based on the pressure behavior due to the variation of the thermal conductivity. The thermal conductivity calculating module may be provided to derive the thermal conductivity from a relational equation predetermined for the resistance measurement value and the thermal conductivity.

Preferably, the vacuum degree calculation module normalizes the measured pressure values using a pressure measuring device, models the normalized pressure measurements with respect to the thermal conductivity, and performs data mining on the modeled thermal conductivity measurement values and pressure measurement values. The relationship between the degree of vacuum of the operation unit and the predetermined reference pressure may be derived by deriving a relational expression for the pressure, and the pressure may be predicted with respect to the inputted thermal conductivity from the derived relational expression, And a verification unit for selecting defects of the defects.

Meanwhile, the vacuum degree measuring method using the thermal conductivity of the infrared sensor of the present invention based on the above-

(A) fabricating a thermoelectric cooler for device cooling, a getter for maintaining vacuum, an infrared sensor, and a temperature sensor in a single chip in a metal vacuum packaging to fabricate an infrared sensor; (B) calculating thermal conductivity from a relational expression derived on the basis of the behavior of thermal conductivity due to resistance variation biased in the infrared sensor; And (c) calculating the degree of vacuum from the relational expression derived based on the pressure behavior due to the variation in thermal conductivity in the heat conductivity derivation module.

The step (b) may be configured to derive a relational expression on the basis of the thermal conductivity behavior with respect to the biased resistance measurement value, and to calculate the thermal conductivity from the derived relational expression, and the step (c) The measured pressure and thermal conductivity are normalized and the pressure and thermal conductivity are modeled. The data mining technique is used to derive the relationship between pressure and thermal conductivity for modeled thermal conductivity and pressure. And calculating the pressure for the resistance measurement value of the infrared sensor from the derived relational expression to predict the vacuum degree.

The method may further include an infrared sensor verification step of selecting a failure of the manufactured infrared sensor based on a comparison result between the predicted vacuum degree after the step (c) and a predetermined reference pressure.

As described above, according to the apparatus and method for measuring the degree of vacuum using the thermal conductivity of the infrared sensor according to the present invention, it is possible to measure the degree of vacuum inside the chip based on the relational expression of the resistance by the bias and the thermal conductivity, The pressure sensor for measuring the degree of vacuum can be removed to reduce the manufacturing process and manufacturing cost of the bolometer infrared sensor and to substantially reduce the size of the chip.

According to the present invention, it is possible to easily detect the defect rate of the infrared sensor without detecting additional defects in the infrared sensor based on the degree of vacuum predicted using the thermal conductivity.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate preferred embodiments of the invention and, together with the description of the invention given below, serve to further understand the technical idea of the invention. And should not be construed as limiting.
1 is a cross-sectional view of a wafer level vacuum packaging infrared sensor according to an embodiment of the present invention.
2 is a view showing the detailed configuration of a sensing unit of a metal vacuum packaging infrared sensor according to an embodiment of the present invention.
3 is a view showing a detailed configuration of a vacuum degree measuring apparatus using thermal conductivity of an infrared ray sensor according to an embodiment of the present invention.
4 is a graph showing the relationship between resistance and thermal conductivity according to an embodiment of the present invention.
5 is a view illustrating a pressure measuring device for measuring an internal pressure of an infrared sensor according to an embodiment of the present invention.
6 is a table showing table values for pressure and thermal conductivity measurements according to an embodiment of the present invention.
7 is a graph showing the relationship between the pressure and the thermal conductivity according to the embodiment of the present invention.
8 is a flowchart illustrating a process of measuring the degree of vacuum using the thermal conductivity of an infrared sensor according to another embodiment of the present invention.

For a better understanding of the present invention and its operational advantages and the objects attained by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

The specific structure or functional description presented in the embodiment of the present invention is merely illustrative for the purpose of illustrating an embodiment according to the concept of the present invention, and embodiments according to the concept of the present invention can be implemented in various forms. And should not be construed as limited to the embodiments set forth herein, but should be understood to include all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Meanwhile, in the present invention, the terms first and / or second etc. may be used to describe various components, but the components are not limited to the terms. The terms may be referred to as a second element only for the purpose of distinguishing one element from another, for example, to the extent that it does not depart from the scope of the invention in accordance with the concept of the present invention, Similarly, the second component may also be referred to as the first component.

Whenever an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but it should be understood that other elements may be present in between something to do. On the other hand, when it is mentioned that an element is "directly connected" or "directly contacted" to another element, it should be understood that there are no other elements in between. Other expressions for describing the relationship between components, such as "between" and "between" or "adjacent to" and "directly adjacent to" should also be interpreted.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. It will be further understood that the terms " comprises ", or "having ", and the like in the specification are intended to specify the presence of stated features, integers, But do not preclude the presence or addition of steps, operations, elements, parts, or combinations thereof.

FIG. 1 is a cross-sectional view of a wafer-level vacuum packaging infrared sensor according to an embodiment of the present invention. FIG. 2 is a view showing a configuration of a metal vacuum packaging infrared sensor according to an embodiment of the present invention. Or the vacuum degree measuring apparatus of the infrared sensor shown in Fig. 2.

1 to 3, an apparatus for measuring a degree of vacuum using a thermal conductivity of an infrared sensor according to an embodiment of the present invention calculates the degree of vacuum of the inside of a chip based on relational expressions of resistance and thermal conductivity by a bias, The apparatus includes an infrared sensor 100, an arithmetic unit 300, and a verification unit 500. The infrared sensor 100 is an apparatus for measuring the degree of vacuum.

1, the infrared sensor 100 includes a lower substrate 110 having a supporting layer formed on at least one surface thereof, a cavity formed on one surface thereof, and an infrared filter formed on at least one surface thereof, A getter 130 formed on an inner surface of the upper substrate and a metal solder layer 140 for bonding the upper substrate and the lower substrate, The sensing unit 150 includes at least one cavity formed on the upper surface thereof and includes a sensing unit 150 for sensing infrared rays in an upper space of the cavities and a supporting unit for supporting the sensing unit 150 on both sides of the sensing unit 150 160 are formed.

The infrared sensor 100 of FIG. 3 is manufactured by a wafer level vacuum packaging sensor such as the infrared sensor of FIG. 1 or a metal vacuum packaging sensor as shown in FIG. 2. The measurement module for estimating the degree of vacuum of the sensor shown in FIG. Of-the-art infrared sensor.

That is, the lower substrate 110 shown in FIG. 1 includes a sensing unit 150 for sensing infrared rays and a supporting unit 160 for supporting the sensing unit 150 on both sides of the sensing unit 150.

In the embodiment of the present invention, the infrared sensor 100 shown in FIG. 3 is described on the basis of a product manufactured by the metal vacuum packaging method of FIG. 2. The infrared sensor 100 may be manufactured by various methods depending on the packaging method and type, Any type of vacuum package can be manufactured. 2, the metal vacuum packaging infrared sensor 100 includes a temperature sensor 151, an infrared sensor chip 152, a thermoelectric cooler 153, a vacuum port 154, and an infrared window cap (not shown) 155).

The performance of this uncooled infrared sensor is influenced by the internal vacuum and is designed to operate at a vacuum of less than 10 mtorr.

That is, the figure of merit of the infrared sensor influenced by the degree of vacuum of the infrared sensor is determined by the thermal conductivity, and since such an infrared sensor absorbs the infra-red energy and reads the change of resistance by the infrared ray heat, It is important.

Therefore, the infrared sensor is largely ignored because heat loss is caused by conduction, convection and radiation, and the width of the metal wiring is minimized in order to minimize the heat loss to such conduction and the heat loss is small due to conduction. Heat loss is determined by the legs of the floating structure. At this time, the convection heat conductivity is determined by the conductivity, the leg length and the leg area. The heat capacity is determined by the area of the floating membrane and the characteristics of the membrane material, and the thermal constant is determined by the ratio of the thermal conductivity and the heat capacity. The membrane varies in resistance according to temperature changes, and the leg provides an electrical path for transferring the output signal of the membrane to the substrate when an electrical signal is applied to the membrane. Since components of the infrared sensor such as the membrane and the leg are well-known and well-known technologies, a detailed description thereof will be omitted.

Accordingly, in order to fabricate a highly sensitive uncooled infrared sensor, the thermal constant value is set to 10 msec, and the thermal conductivity measured by the set thermal constant rapidly decreases at a pressure of 760 torr to 10 mtorr and is constant at 10 mtorr or less , And the heat loss due to convection is negligibly small when the pressure is 10 mtorr or less. Therefore, the high sensitivity uncooled infrared sensor is designed to operate at a vacuum of a reference pressure of 10 mtorr or less.

Although the infrared sensor in the embodiment of the present invention is fabricated using wafer level packaging, it can be fabricated in various ways such as pixel level vacuum packaging, metal vacuum packaging, and the like. The manufacturing process of a specific infrared sensor using each wafer level packaging is the same as or similar to the manufacturing process of a general infrared sensor.

Hereinafter, the process of measuring the degree of vacuum of the infrared sensor manufactured by the calculation unit 300 shown in FIG. 3 will be described in more detail.

The calculation unit 300 includes a resistance measurement module 310 for measuring the resistance biased from the sensing unit 150 that senses the pressure of the manufactured infrared sensor and a thermal conductivity measuring unit 310 for calculating the thermal conductivity from the relational formula derived from the behavior of the thermal conductivity due to the resistance variation. A heat conductivity calculation module 320 for calculating a thermal conductivity of the thermal conductivity calculation module 320 and a vacuum degree prediction module for calculating a pressure from a relational expression derived on the basis of the pressure behavior due to the thermal conductivity variation of the thermal conductivity calculation module 320, 330).

The resistance measurement module 310 is formed of a material whose resistance changes according to a change in temperature. The resistance measurement module 310 applies an electrical signal to the membrane floating on the substrate, and measures a resistance according to temperature conversion as an output signal of the membrane according to the degree of vacuum. .

That is, the thermal conductivity calculation module 320 measures the thermal conductivity according to the variation of the biased resistance by experiment and derives a relational expression for the thermal conductivity behavior according to the resistance variation with the measured experimental result. At this time, the relational expression for the resistance (R) and the thermal conductivity (G) satisfies the following equation (1).

Figure 112015094737325-pat00001
... Equation 1

Where R is the resistance of the bolometer, R0 is the initial resistance, α is the TCR, and G is the thermal conductivity.

FIG. 4 is a graph showing I / R and I 2 derived from Equation 1. Referring to FIG. 3, a current I of a packaged infrared device is measured by applying a bias of 0.1 to 5 μA and measuring a resistance R And the thermal conductivity G is calculated from the slope α (TCR) / G in the 1 / R and I 2 graphs. Here, the slope of the graph of Fig. 4 has a value of about 0.02 as? (TCR) / G value.

FIG. 5 is a view showing a pressure measuring instrument for measuring the pressure (vacuum degree) of the manufactured infrared sensor 100. Referring to FIG. 4, a pressure measuring instrument equipped with a nitrogen gas, a vacuum pump, The pressure within the sensor 100 is measured. After normalizing the pressure measurements received from these pressure measurement devices, modeling of the rectified pressure measurements and thermal conductivity is established.

That is, the vacuum degree predicting module 330 normalizes the measured pressure values using a pressure measuring device, models the normalized pressure values with respect to the thermal conductivity, and performs data mining on the modeled thermal conductivity and pressure, We derive the relation for pressure and calculate the pressure for the input thermal conductivity from the derived relation and predict the degree of vacuum inside the infrared sensor manufactured by the calculated pressure.

FIGS. 6 and 7 are diagrams showing table values of the pressure versus thermal conductivity by the vacuum degree predicting module 330 for predicting the pressure (vacuum degree) with respect to the thermal conductivity G derived from the equation 1. FIG. In the graph of FIG.

Using the data mining technique and the graph of pressure and thermal conductivity shown in FIG. 7 for the table values shown in FIG. 6 constructed through the modeling of the pressure measurements and the thermal conductivity provided by the pressure measuring equipment shown in FIG. 5, The relationship between the pressure and the thermal conductivity is derived, and the relationship between the derived pressure and the thermal conductivity is expressed by the following equation (2).

Figure 112015094737325-pat00002
... Equation 2

When the reference pressure applied to the high sensitivity infrared sensor is 10 mtorr, y 0 is 1.8189e-5, A is -1.7927e-5, and R 0 is -0.0312 as the initial pressure, appear. The standard deviation over the normalization, y 0 is the initial thermal conductivity 1.89559e-7 to a value, A is 2.04828e-7, R 0 denotes a weight of 0.00122 to the initial pressure.

Through the above-described process, the internal pressure of the infrared sensor manufactured based on the relational expression of the resistance and the thermal conductivity and the relation of the thermal conductivity and the pressure is calculated and the vacuum degree of the infrared sensor is predicted by the calculated pressure.

Accordingly, the pressure sensor for measuring the vacuum gauge inside the chip is measured based on the relation between the resistance and the thermal conductivity by the bias, the relation between the thermal conductivity and the pressure, and the manufacturing process and manufacturing unit of the bolometer infrared sensor And the size of the chip can be fundamentally reduced.

Meanwhile, the verification unit 500 detects a failure of the infrared device manufactured through comparison between the degree of vacuum of the vacuum degree prediction module 330 and the reference pressure, and the degree of vacuum of the vacuum degree prediction module 330 is not less than the reference pressure of 10 mtorr The manufactured infrared device is judged as defective, and when it is equal to or lower than the predetermined value, it is judged as good.

That is, it is possible to detect the defect of the infrared sensor based on the degree of vacuum measured using the thermal conductivity, and to easily detect the defect of the infrared sensor without additional equipment.

FIG. 8 is a flowchart illustrating a process of measuring the degree of vacuum using the thermal conductivity of the infrared sensor shown in FIG. 3. Referring to FIG. 8, the process of measuring the degree of vacuum using the thermal conductivity of the infrared device according to another embodiment of the present invention Explain.

First, an infrared sensor is manufactured in a predetermined manner in an operation unit 300, and the internal pressure of the manufactured infrared sensor is measured using a pressure measuring device provided separately. The measured pressure is normalized to a measured pressure measurement value, The modeling of the thermal conductivity calculated from the relation between the resistance and the thermal conductivity is constructed and the relation for the pressure and the thermal conductivity is derived through the modeling and data mining techniques constructed and stored (S1-S3).

On the other hand, a relational expression showing the relationship of the thermal conductivity with respect to the resistance measurement value biased from the infrared device manufactured in the operation unit 300 is derived, the thermal conductivity with respect to the resistance measurement value is measured from the derived relational expression, and the thermal conductivity and pressure Based on the relational expression, the pressure of the manufactured infrared device is calculated and the internal vacuum degree of the infrared sensor manufactured by the calculated pressure is predicted (S4, S5, S6).

Then, the predicted pressure for the infrared device is compared with the predetermined reference pressure, and the defective or good product of the infrared sensor fabricated according to the comparison result is judged by the verification unit 500 (S7-S9).

According to the present invention, the vacuum degree of the chip is measured based on the relational expression of the resistance and the thermal conductivity by the bias, the relation of the thermal conductivity and the pressure, and the pressure sensor for measuring the vacuum gauge is removed, The manufacturing cost can be reduced, the size of the chip can be fundamentally reduced, the defect of the infrared sensor can be detected based on the degree of vacuum measured using the thermal conductivity, and the defect of the infrared sensor can be easily detected without additional equipment.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Based on the relationship between the resistivity and the thermal conductivity by the bias and the relation between the thermal conductivity and the pressure, it is possible to reduce the manufacturing process and manufacturing cost of the bolometer infrared sensor by measuring the vacuum degree in the chip and removing the pressure sensor that measures the conventional vacuum gauge It is possible to reduce the size of the chip and to detect the defect of the infrared sensor based on the degree of vacuum measured by using the thermal conductivity and to use the thermal conductivity of the infrared sensor which can easily detect the defect of the infrared sensor without adding additional equipment The accuracy and reliability of the operation and reliability of the apparatus and method for measuring the degree of vacuum can be greatly improved, and the possibility of commercialization or sales of the infrared sensor is sufficient, It is an available invention.

Claims (10)

A thermoelectric cooler for device cooling, a getter for maintaining vacuum, an infrared sensor, and an infrared sensor packaged in a metal vacuum with a temperature sensor as one element; And
And an operation unit for measuring the degree of vacuum of the infrared sensor based on the behavior of the thermal conductivity due to the resistance variation biased by the infrared sensor and the pressure behavior according to the variation of the thermal conductivity. Device. The apparatus according to claim 1,
A resistance measurement module for measuring a resistance variation biased by the manufactured infrared sensor,
A thermal conductivity calculation module for calculating a thermal conductivity from a relational expression derived based on the behavior of the thermal conductivity due to the resistance variation;
And a vacuum degree prediction module for calculating the pressure of the infrared sensor manufactured from the relational formula derived based on the pressure behavior due to the variation of the thermal conductivity of the thermal conductivity calculation module and for predicting the internal vacuum degree of the infrared sensor by the calculated pressure A device for measuring the degree of vacuum using the thermal conductivity of an infrared sensor.
The method of claim 2, wherein the thermal conductivity calculation module
Wherein the thermal conductivity is calculated from a relational formula determined for a bias resistance value and a thermal conductivity derived through a plurality of experiments.
The apparatus of claim 2, wherein the vacuum degree prediction module
After normalizing the measured pressure measurements using external pressure measurement equipment, normalized pressure measurements are modeled for the thermal conductivity
The relationship between thermal conductivity and pressure is derived through data mining techniques for modeled thermal conductivity measurements and pressure measurements
Calculating a pressure of the thermal conductivity of the infrared sensor manufactured from the derived relational expression, and predicting the internal vacuum degree of the infrared sensor with the calculated pressure.
The apparatus of claim 1,
Further comprising a verifying unit for selecting a defect of the manufactured infrared sensor based on a comparison result between the degree of vacuum of the calculating unit and a predetermined reference pressure.
After normalizing the measured pressure measurements of the infrared sensor using external pressure measurement equipment, normalized pressure measurements are modeled for the thermal conductivity,
The relationship between thermal conductivity and pressure is derived through data mining techniques for modeled thermal conductivity measurements and pressure measurements
Calculating a pressure of the thermal conductivity of the infrared sensor manufactured from the derived relational expression, and predicting the internal vacuum degree of the infrared sensor with the calculated pressure.
(A) fabricating a thermoelectric cooler for device cooling, a getter for maintaining vacuum, an infrared sensor element, and a temperature sensor in a single chip in a metal vacuum packaging to fabricate an infrared sensor;
(B) calculating thermal conductivity from a relational expression derived on the basis of the behavior of thermal conductivity due to resistance variation biased in the infrared sensor; And
(C) calculating a degree of vacuum from a relational expression derived on the basis of a pressure behavior due to a change in the thermal conductivity in the thermal conductivity deriving module; and measuring the degree of vacuum using the thermal conductivity of the infrared sensor.
8. The method of claim 7, wherein step (b)
Deriving a relational expression based on the thermal conductivity behavior of the measured resistance value, and calculating the thermal conductivity from the derived relational expression.
9. The method of claim 8, wherein step (c)
The internal pressure of the infrared sensor is measured using an external pressure measuring device, the pressure measurement is normalized, the pressure and thermal conductivity are normalized,
The relationship between pressure and thermal conductivity is derived through data mining technique for modeled thermal conductivity and pressure,
And calculating the pressure of the infrared sensor from the derived relational expression to predict the degree of vacuum.
8. The method of claim 7, wherein after step (c)
Further comprising an infrared sensor verification step of selecting a defect of the manufactured infrared sensor based on a comparison result between the calculated pressure and a predetermined reference pressure.

KR1020150137891A 2015-09-30 2015-09-30 Vacuum measuring apparatus and method using thermal conductivity of infrared sensor KR101743205B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150137891A KR101743205B1 (en) 2015-09-30 2015-09-30 Vacuum measuring apparatus and method using thermal conductivity of infrared sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150137891A KR101743205B1 (en) 2015-09-30 2015-09-30 Vacuum measuring apparatus and method using thermal conductivity of infrared sensor

Publications (2)

Publication Number Publication Date
KR20170039006A KR20170039006A (en) 2017-04-10
KR101743205B1 true KR101743205B1 (en) 2017-06-07

Family

ID=58581133

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150137891A KR101743205B1 (en) 2015-09-30 2015-09-30 Vacuum measuring apparatus and method using thermal conductivity of infrared sensor

Country Status (1)

Country Link
KR (1) KR101743205B1 (en)

Also Published As

Publication number Publication date
KR20170039006A (en) 2017-04-10

Similar Documents

Publication Publication Date Title
JP6349713B2 (en) Internal temperature sensor
CN105358949B (en) For measuring the method and system of heat flux
US10416140B2 (en) Gas sensor with temperature control
US9909930B2 (en) Multi-sensor assembly with tempature sensors having different thermal profiles
US20070069133A1 (en) Microbolometer IR Focal Plane Array (FPA) with In-Situ Micro Vacuum Sensor and Method of Fabrication
US10551252B2 (en) Internal temperature measuring apparatus and sensor package
US20170188413A1 (en) Micro-electromechanical temperature control system with thermal reservoir
US9846083B2 (en) Ambient temperature measurement sensor
JP2016523356A5 (en)
JP2013531248A (en) Infrared temperature measurement and stabilization
CN109997032B (en) Thermal conductivity measuring device, thermal conductivity measuring method, and vacuum degree evaluating device
US20130206989A1 (en) Radiation Sensor
TWI827664B (en) Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
US10451490B2 (en) Sensor package
KR101743205B1 (en) Vacuum measuring apparatus and method using thermal conductivity of infrared sensor
US10156512B2 (en) System and method for measuring thermal reliability of multi-chip modules
CN106289537B (en) Built-in self-test circuit and method for infrared thermopile
TWI612308B (en) Acceleration sensor
KR102257190B1 (en) Thermal conductivity measurement system and thermal conductivity measurement method thereof
JP2006078185A (en) Method and apparatus for inspecting heat insulating capacity
JP6634546B2 (en) Thermal conductivity measuring device, thermal conductivity measuring method, and vacuum degree evaluation device
JP2012164689A (en) Airtight package, method for measuring moisture content in the airtight package, and method for measuring leak rate of the airtight package
US20230296443A1 (en) Electromagnetic wave sensor and manufacturing method thereof
JP2010190654A (en) Apparatus and method for leak testing, and heat sensitive member
Elßner et al. Failure mechanisms of microbolometer thermal imager sensors using chip-scale packaging

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right