KR101738876B1 - Source head - Google Patents
Source head Download PDFInfo
- Publication number
- KR101738876B1 KR101738876B1 KR1020150167409A KR20150167409A KR101738876B1 KR 101738876 B1 KR101738876 B1 KR 101738876B1 KR 1020150167409 A KR1020150167409 A KR 1020150167409A KR 20150167409 A KR20150167409 A KR 20150167409A KR 101738876 B1 KR101738876 B1 KR 101738876B1
- Authority
- KR
- South Korea
- Prior art keywords
- housing
- head
- arc chamber
- plate
- coupled
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 claims abstract description 70
- 238000011109 contamination Methods 0.000 claims abstract description 35
- 238000003780 insertion Methods 0.000 claims abstract description 26
- 230000037431 insertion Effects 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 5
- 230000002265 prevention Effects 0.000 claims description 23
- 239000002784 hot electron Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 description 37
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Field of the Invention [0002] The present invention relates to a source head, and more particularly, to a source head constituting an ion implantation facility used for implanting impurities into a wafer during semiconductor processing.
BACKGROUND ART [0002] Ion implantation is one of methods for producing an impurity semiconductor, in which ion impurities are accelerated to form an ion beam, which is injected into a substrate of a semiconductor.
In the ion implantation process, an ion source head is used as an apparatus for forming ionized impurities implanted into the wafer. In the ion source head, the ion generator includes a reaction chamber for generating ions therein, A filament for reflecting the thermoelectrons emitted from the filament, and a repeller for reflecting the thermoelectrically emitted from the filament.
Korean Patent No. 10-1149826 discloses a " source head of semiconductor manufacturing equipment "in connection with such an ion source head and ion generating portion, and specifically, a head body made of a vertical tube member having a space therein, An arc chamber which is supported on an upper portion of the head main body and has a filament and a repeller opposed to each other in the inside of the head main body and a filament insulator which is positioned between the lower end of the arc chamber and the upper end of the head main body and is attached to the filament side and the re- A filament clamp and a repeller clamp which are respectively supported by the insulator and the filer insulator and which hold the filament and the refeller; and an upper end portion of the filament and the refeller clamp which are connected to the connecting pin connected to the clamp side, 1 feedthroughs and a second feedthrough; and a second feedthrough disposed vertically along the inner space of the head body, A gas supply pipe or the like communicating with the inside of the arc chamber, thereby reducing the number of components of the source head and reducing the overall cost of simplification of the structure.
On the other hand, in the ion implantation process, a manipulator for extracting ions generated in the ion generating portion by using a potential difference is used. As related prior arts, Korean Patent Laid-Open Nos. 10-2000-0015115, -2004-0042918 and Korean Patent No. 10-0997680.
The manipulator is installed separately at a predetermined distance from the front of the source head (on which the ion generating portion is formed), and has two ion passing portions (slot shapes), while ions from the ion generating portion pass through the respective ion passing portions So as to move in the vertical direction.
Conventional ion implantation apparatuses including a source head have the following problems, and the present invention attempts to solve such a problem.
First of all, the source head has a large number of individual assembled parts, and the structure is complicated, so it takes a long time to assemble and disassemble. Particularly, since the weight of the source head is heavy, It can be deformed.
The manipulator is formed separately from the source head to form a separate assembly. Since a number of parts for mounting and connecting the manipulator are used, the manipulator also becomes a weight body. In addition, the weight of the manipulator is increased by providing two ion- However, the mounting space is narrow and it becomes difficult to attach and detach.
In particular, it is necessary to align the manipulator so that the ion beam from the ion generating part can pass through the ion passing portion of the manipulator precisely because the arrangement for alignment is increased and the two ion passing portions are alternately controlled and aligned The structure becomes a very complicated device.
An object of the present invention is to provide a source head capable of easily replacing the housing in consideration of wear caused by use of the housing and capable of preventing or mitigating contamination of the source head by ions.
An object of the present invention is to provide an ion implantation apparatus for implanting impurities into a wafer during a semiconductor process, the ion implantation apparatus comprising: an arc chamber forming a space in which ions collide with a hot electron; A head body located behind the arc chamber and to which the arc chamber is fixedly coupled; A housing having a cylindrical shape and surrounding the arc chamber and the head body; And a housing flange separated from and coupled to a rear end of the housing and having a head insertion hole at a center thereof, the head body being inserted, and the housing flange fixedly coupled to the head body.
The source head according to the present invention is characterized in that the housing flange is provided with a housing seating portion having an inner diameter corresponding to the outer diameter of the rear end of the housing in front of the head insertion hole and being separable and engageable with the housing flange, And a stationary piece for fixing the housing in a state where a rear end of the housing is seated in the seating part.
The base flange has a base seating portion having an inner diameter corresponding to an outer diameter of the base plate at a rear side of the head insertion hole, And a clamping assembly for fixing the base plate in a state where the base plate is seated on the base seating part.
At this time, the clamping assembly includes: a base pin fixedly coupled to a back surface of the housing flange and extending in the front-rear direction; A slider coupled to the base pin and reciprocating in a forward and backward direction; A base spring for elastically supporting the slider backward against the base pin; And a finger portion which is fixed to the slider and moves together with the slider, protrudes toward the head insertion hole, and one end of the finger portion is in close contact with the back surface of the base plate.
In addition, in the source head according to the present invention, the inner circumferential surface of the housing may be provided with a contamination prevention protrusion protruding inwardly and protruding at a constant height in the entire circumferential direction.
Wherein the head body includes: a base plate having a diameter expanded at a rear end; And a contamination prevention plate disposed between the arc chamber and the base plate and having a diameter enlarged. The inner diameter of the contamination prevention chuck may be smaller than the diameter of the contamination prevention plate.
In addition, the contamination prevention plate may be located behind the pollution prevention lip.
According to the present invention, since the housing is detachably coupled to the housing plate, only the housing part can be easily separated from the source head, the housing can be easily coupled and separated, and the contamination- It is possible to provide a source head capable of effectively blocking the movement of the ions to the rear side of the housing.
1 is a perspective view showing a source head according to an embodiment of the present invention,
FIG. 2 is an exploded perspective view showing the source head shown in FIG. 1,
FIG. 3 is a side view showing only the housing portion in the source head shown in FIG. 1,
4 is an exploded perspective view of the source head according to the present invention, excluding the housing and the housing flange,
FIG. 5 is a cross-sectional view showing a partial structure of the source head shown in FIG. 4,
6 is a view for explaining each configuration of the ion generating section in the source head according to the present invention,
7 is an exploded perspective view showing an aperture according to the present invention,
8 is a rear perspective view showing the source head shown in Fig.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, the well-known functions or constructions are not described in order to simplify the gist of the present invention.
1 is a perspective view showing a
The
The ions generated inside the
Accordingly, in the explanation of the
The
The
The
The
The
In the
A
The
The end of the
A
Conventionally, a method of using the tension is used for coupling the
On the other hand, the
The
The
At this time, the
The surface area of the
When a compound (for example, WF n molecules) is deposited on the surface of the
Even if the compound film is formed on the
In addition, when the compound film is deposited on the
In the
On the other hand, the
Particularly in the
The
The
The
The
On the other hand, the
The
In the
The
A
The
The
The cooling water injected into the
In the
The
The
The fixed
The chamber
And the chamber power supply line 270 (the feedthrough 272) on the
The
The
The front end of the first energizing
The
The
The front end of the second energizing
In the
The
The
It is preferable that the center of the
The
The diameter of the
The
The
The
The ions generated in the
In addition, as described above, various lines (conductors) to which electrical connection is made are coupled on the
The
It is preferable that the
The diameter of the
The
One of the
To this end, the
The
Particularly, the
The
The
The second washer 540 is also provided in a pair and is engaged with the
The second washer 540 is positioned behind the
The hook springs 530 are also provided as a pair and interposed between the
The
In the
The
However, the
The
When the
The diameter of the
When the
In this state, the fixed
In the
The first fixing
The
The
The
The rear end of the
The
The
The
The front end of the
The second
The fixing
The insulating
In the
Further, in the present invention, the structure can be further simplified by using the fixing
The
In the
The edges of the
The distance between the
In the
The pollution control tucks 610 protrude inward from the inner circumferential surface of the
The
As a result, the ions introduced into the interior of the
Even when there is ions moving beyond the
In the
The
The center of the
The diameter of the
First, the coupling between the
A fixed
The
The fixed
According to the present invention, since the
Next, the coupling between the
The
In this state, coupling between the
Specifically, the clamping
The
The
The
The fingering
The
The
The
As described above, according to the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It is obvious to those who have. Accordingly, it should be understood that such modifications or alterations should not be understood individually from the technical spirit and viewpoint of the present invention, and that modified embodiments fall within the scope of the claims of the present invention.
1: source head 100: ion generator
110: arc chamber 111: aperture
112: slit 120: filament
130: Repeller 131: Concave groove
140: cathode 150: clamping bar
151: first insertion hole 160: fixing screw
161: second insertion hole 170: fixing nut
200: head body 210: central body
220: base plate 230: first plate
240: Pollution prevention plate 250: Gas line
260: Cooling line 261: Inner tube
262: outer tube 270: chamber power supply line
271: Fixing portion 272: Feedthrough
280: first feedthrough 281: first energizing pin
282: first rear insulator 283: first front insulator
290: second feedthrough 291: second energizing pin
292: second rear insulator 293: second front insulator
300: Manipulator 310: Second plate
320: Slot
400: stationary bar assembly 410: first stationary bar assembly
411: central insulator 412: rear cover
413: front cover 420: second fixing bar assembly
421: Fixing bar 422: Insulation block
500: Hook assembly 510: Hook
520: first washer 530: hook spring
540: Second washer
600: housing 610:
700: housing flange 710: head insertion hole
720: Housing seating part 730: Base seating part
740: clamping assembly 741: base pin
742: Slider 743:
744: Base spring
Claims (7)
An arc chamber forming a space in which ions collide with a hot electron;
A head body located behind the arc chamber and to which the arc chamber is fixedly coupled;
A housing having a cylindrical shape and surrounding the arc chamber and the head body; And
And a housing flange separated from and coupled to a rear end of the housing and having a head insertion hole at the center thereof and inserted into the head body and fixedly coupled to the head body,
Wherein the head body includes a base plate whose diameter is expanded at a rear end thereof,
Wherein the housing flange is provided with a base seating portion having an inner diameter corresponding to an outer diameter of the base plate at a rear side of the head insertion hole,
And a clamping assembly for securing the base plate with the base plate seated in the base seating part.
Wherein the housing flange is provided with a housing seating portion having an inner diameter corresponding to an outer diameter of a rear end of the housing in front of the head insertion hole,
And a stationary piece which is detachably coupled to the housing flange and fixes the housing in a state where a rear end of the housing is seated in the housing seating part.
The clamping assembly comprises:
A base pin fixedly coupled to a rear surface of the housing flange and elongated in a front-rear direction;
A slider coupled to the base pin and reciprocating in a forward and backward direction;
A base spring for elastically supporting the slider backward against the base pin; And
And a finger portion which is fixed to the slider and moves together with the slider, and protrudes toward the head insertion hole, and one end of which is in close contact with the back surface of the base plate.
Wherein the inner surface of the housing is protruded inwardly, and a contamination preventing jaw protruding at a constant height in the entire circumferential direction is provided.
The head body includes:
A base plate having a diameter enlarged at a rear end thereof; And
And a contamination prevention plate disposed between the arc chamber and the base plate and having a diameter enlarged,
Wherein an inner diameter of the contamination preventing chuck is smaller than a diameter of the contamination preventing plate.
And the contamination prevention plate is located behind the contamination prevention trough.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150167409A KR101738876B1 (en) | 2015-11-27 | 2015-11-27 | Source head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150167409A KR101738876B1 (en) | 2015-11-27 | 2015-11-27 | Source head |
Publications (1)
Publication Number | Publication Date |
---|---|
KR101738876B1 true KR101738876B1 (en) | 2017-05-23 |
Family
ID=59050266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150167409A KR101738876B1 (en) | 2015-11-27 | 2015-11-27 | Source head |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101738876B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101893419B1 (en) | 2017-08-25 | 2018-08-31 | (주)거성 | Source head |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004349492A (en) | 2003-05-22 | 2004-12-09 | Furukawa Co Ltd | Device for growing vapor phase of nitride |
US20050050955A1 (en) | 2003-09-10 | 2005-03-10 | Honeywell International, Inc. | Sensor top hat cover apparatus and method |
-
2015
- 2015-11-27 KR KR1020150167409A patent/KR101738876B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004349492A (en) | 2003-05-22 | 2004-12-09 | Furukawa Co Ltd | Device for growing vapor phase of nitride |
US20050050955A1 (en) | 2003-09-10 | 2005-03-10 | Honeywell International, Inc. | Sensor top hat cover apparatus and method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101893419B1 (en) | 2017-08-25 | 2018-08-31 | (주)거성 | Source head |
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