KR101737218B1 - Silicon carbide tile/aluminium hybride composites and method for manufacturing thereof - Google Patents
Silicon carbide tile/aluminium hybride composites and method for manufacturing thereof Download PDFInfo
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- KR101737218B1 KR101737218B1 KR1020150132793A KR20150132793A KR101737218B1 KR 101737218 B1 KR101737218 B1 KR 101737218B1 KR 1020150132793 A KR1020150132793 A KR 1020150132793A KR 20150132793 A KR20150132793 A KR 20150132793A KR 101737218 B1 KR101737218 B1 KR 101737218B1
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/123—Spraying molten metal
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Abstract
The present invention relates to a silicon carbide tile / aluminum hybrid composite and a method of manufacturing the same. More specifically, the present invention relates to a silicon carbide tile / aluminum hybrid composite material. And an aluminum-containing layer formed on at least a portion of the outer surface of the silicon carbide tile; And a bonding layer between the silicon carbide tile and the aluminum-containing layer. The present invention relates to a silicon carbide tile / aluminum hybrid composite material.
The present invention can provide a silicon carbide tile / aluminum hybrid composite material having improved interfacial properties through surface modification of silicon carbide tiles.
Description
The present invention relates to a silicon carbide tile / aluminum hybrid composite material and a method of manufacturing the same.
Ceramic / metal composites combine the merits of ceramics and metals and are used as new materials in many fields. Among them, SiC p -reinforced aluminum matrix composites have very good mechanical and thermal properties, , And electronic devices.
In advanced countries such as the United States and the United Kingdom, they are used as bullet-proof materials because of their excellent mechanical properties such as high strength and hardness of SiC / Al composites and excellent impact resistance.
When a composite material of carbide and aluminum such as SiC is produced, a product such as Al 4 C 3 having a high brittleness at the interface can be formed, which causes cracks in the composite material, which causes deterioration of mechanical properties. Aluminum which forms an oxide film in the air has a low wettability with SiC that is not surface-treated in the course of manufacturing a composite material, which results in a failure to form a strong bond or deteriorate the mechanical properties of the composite material.
In order to overcome these problems, the production of Al 4 C 3 should be suppressed in the production of composites. As a typical method for controlling the interfacial reaction, a method of adding Mg, Si, or the like to an aluminum alloy has been proposed. However, this method is limited to an aluminum matrix composite material using SiC particles as a reinforcement material.
In order to solve the above problems, the present invention provides a silicon carbide tile / aluminum hybrid composite exhibiting improved mechanical properties by improving interfacial wettability and interfacial bonding between silicon carbide tile (SiC tile) and aluminum (Al) will be.
The present invention also relates to a method for producing a silicon carbide tile / aluminum hybrid composite material, which is capable of preventing the deterioration of interfacial wettability between the silicon carbide tile and aluminum through the surface modification of the silicon carbide tile and suppressing the formation of Al 4 C 3 , / Aluminum hybrid composite material.
The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.
One aspect of the present invention is a silicon carbide tile; And an aluminum-containing layer formed on at least a portion of the outer surface of the silicon carbide tile; And a bonding layer between the silicon carbide tile and the aluminum-containing layer. The present invention relates to a silicon carbide tile / aluminum hybrid composite material.
According to an embodiment of the present invention, the bonding layer includes an oxide layer formed by oxidizing at least a part of a surface of the silicon carbide tile; A metal plating layer formed by electroless plating at least a part of the surface of the silicon carbide tile; A metal powder coating layer formed by spray coating a metal powder on at least a part of the surface of the silicon carbide tile; A nitride layer formed by nitriding a metal powder coating layer formed on at least a part of a surface of the silicon carbide tile; . ≪ / RTI >
According to one embodiment of the present invention, the oxide layer comprises SiO 2 , and the metal plating layer comprises nickel, copper or both, the metal powder coating layer comprises silicon powder, and the nitride layer comprises Si 3 N 4 .
According to one embodiment of the present invention, the bonding layer may be Al 4 C 3 - free.
According to another aspect of the present invention, there is provided a method of manufacturing a silicon carbide tile, comprising: preparing a silicon carbide tile; Surface-modifying at least a portion of the surface of the silicon carbide tile; And forming an aluminum-containing layer on the surface-modified portion of the silicon carbide tile; To a process for producing a silicon carbide tile / aluminum hybrid composite material.
According to one embodiment of the present invention, the surface modification step may oxidize at least a portion of the surface of the silicon carbide tile to form an oxide layer comprising SiO 2 .
According to an embodiment of the present invention, the surface modification step may include forming a metal plating layer by performing electroless plating of at least a part of the surface of the silicon carbide tile, and the metal may be nickel, . ≪ / RTI >
According to one embodiment of the present invention, the surface modification step comprises spray coating silicon powder on at least a portion of the surface of the silicon carbide tile to form a metal powder coating layer comprising silicon powder, Spraying or plasma spraying.
According to an embodiment of the present invention, after a silicon powder coating layer is formed by spray coating a silicon powder on at least a part of the surface of the silicon carbide tile, the silicon powder coating layer is nitrided to form a nitride layer including a Si 3 N 4 layer Can be formed.
The present invention relates to a method for manufacturing a composite material using a silicon carbide tile having mechanical properties of high hardness and high strength and a composite material using light aluminum having a high specific strength to solve the wettability deterioration by controlling the interface between the silicon carbide tile and aluminum, To provide a hybrid composite of silicon carbide tile / aluminum with improved mechanical properties such as impact resistance and abrasion resistance.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a hybrid composite of silicon carbide tile / aluminum according to one embodiment of the present invention.
2 is a cross-sectional view of a hybrid composite of silicon carbide tile / aluminum according to another embodiment of the present invention.
3 illustrates a flow diagram of a method of making a hybrid composite of silicon carbide tile / aluminum according to an embodiment of the present invention.
4 is a flow chart of a method of manufacturing a hybrid composite material of silicon carbide tile / aluminum according to another embodiment of the present invention.
FIG. 5 illustrates an exemplary flow chart of a method of manufacturing a hybrid composite material of silicon carbide tile / aluminum according to another embodiment of the present invention.
FIG. 6 is an exemplary flow chart of a method for manufacturing a hybrid composite material of silicon carbide tile / aluminum according to another embodiment of the present invention.
7 illustrates a flow chart of a method of manufacturing a hybrid composite material of silicon carbide tile / aluminum according to another embodiment of the present invention.
Fig. 8 shows the wetting angle measured according to the temperature of the hybrid composite material of silicon carbide tile / aluminum produced by the examples and comparative examples of the present invention.
Fig. 9 shows the interfacial bonding strengths of the silicon carbide tile / aluminum hybrid composites produced by the examples and comparative examples of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.
The present invention relates to a silicon carbide tile / aluminum hybrid composite material, wherein the composite material has improved interfacial properties between the silicon carbide tile and aluminum and can exhibit excellent mechanical properties.
According to one embodiment of the present invention, the composite material may comprise a silicon carbide tile and an aluminum-containing layer formed on at least a portion of the outer surface of the silicon carbide tile, wherein the composite layer comprises a bonding layer between the silicon carbide tile and the aluminum- can do.
In an embodiment of the present invention, the outer surface may be one surface, both surfaces, or an outer surface of the front surface of the silicon carbide tile, and the at least a part may be a part or all.
In one embodiment of the present invention, the bonding layer may include a surface modification layer formed on at least a part of the surface of the silicon carbide tile. The surface modification layer can prevent direct contact between silicon carbide and aluminum, control the interface characteristics between the silicon carbide tile and aluminum to provide a stable interface structure, and improve the bonding force of aluminum.
In one embodiment of the present invention, the surface modification layer may be formed on at least a part of the outer surface of one surface, both surfaces, or the entire surface of the silicon carbide tile.
In one embodiment of the present invention, the surface modification layer includes an oxide layer formed by oxidizing at least a part of a surface of a silicon carbide tile; A metal plating layer formed by metal electroless plating at least a part of the surface of the silicon carbide tile; A metal powder coating layer formed by spray coating a metal powder on at least a part of the surface of the silicon carbide tile; Or a nitride layer formed by nitriding a metal powder coating layer formed on at least a part of the surface of the silicon tile; . ≪ / RTI > The oxide, including SiO 2, and the metal plating layer, nickel (Ni), copper include (Cu), or both, wherein the metal powder coating layer comprises a silicon powder, and the nitride layer is Si 3 N 4 .
In one embodiment of the present invention, the surface modification layer may include an interface bonding portion between the surface modification layer and the aluminum-containing layer. The interface bonding portion may include an interface reaction product between the surface modification layer and aluminum. The kind, concentration, thickness, and the like of the interface reaction product may vary depending on the components of the surface modification layer, the heat applied when forming the aluminum-containing layer, the pressure, and the method of forming the aluminum-containing layer. Preferably, the interfacial reaction product can be Al 4 Cl 3 - free. For example, it may be an interfacial reaction product between at least a portion of the metal plating layer and aluminum.
According to one embodiment of the present invention, the composite material may include an aluminum-containing layer and a bonding layer formed on the entire surface of the silicon carbide tile. 1, a
According to another embodiment of the present invention, the composite material may include an aluminum-containing layer and a bonding layer formed on both sides of the silicon carbide tile. 2, the
The present invention relates to a method of producing a silicon carbide tile / aluminum hybrid composite material, wherein the surface modification of the silicon carbide tile is used to adjust the interface characteristics between the tile and aluminum, The formation of Al 4 C 3 which is an interfacial reaction product of the tile can be suppressed and the wettability of the composite material can be improved. 3, a method of manufacturing a silicon carbide tile / aluminum hybrid composite according to an embodiment of the present invention is shown. In FIG. 3, (S1); Modifying the surface (S2); And forming an aluminum-containing layer (S3).
According to an embodiment of the present invention, the manufacturing method will be described with reference to FIG. 4, wherein the manufacturing method of FIG. 4 includes the steps of preparing a silicon carbide tile (S1a); A step (S2a) of surface modification by oxidation treatment; And forming an aluminum-containing layer (S3a).
The step (S1a) of preparing silicon carbide tiles is a step of preparing silicon carbide tiles according to the size, shape and the like of the desired silicon carbide tile / aluminum hybrid composite material.
Step S2a of modifying the surface by oxidation treatment is a step of oxidizing at least a part of the surface of the silicon carbide tile prepared in step S1a to form an oxide layer. As an example of the present invention, step S2a is performed in an air atmosphere at a temperature of not lower than 1100 占 폚; 1100 DEG C to 1400 DEG C; Alternatively, the silicon carbide tile may be thermally treated at a temperature of 1200 ° C to 1400 ° C for 2 to 5 hours to form an oxide layer. In one embodiment of the present invention, the oxide layer includes amorphous SiO 2 , and the thickness can be controlled according to the heat treatment temperature and time, preferably 200 nm to 800 nm, more preferably 250 nm to 700 nm Thickness, and it is preferable to be within the above-mentioned thickness range because it can inhibit Al 4 C 3 in reaction with the aluminum-containing layer.
The step S3a of forming the aluminum-containing layer is a step of forming an aluminum-containing layer on the surface-modified portion of the silicon carbide tile after step S2a to form a silicon carbide tile / aluminum hybrid composite. In one embodiment of the present invention, the aluminum-containing layer comprises aluminum; Or an aluminum base containing silicon carbide, boron carbide, or both.
In one embodiment of the present invention, the oxide layer formed in step S2a prevents direct contact between the silicon carbide tile and aluminum during the formation of the aluminum-containing layer, thereby inhibiting the formation of Al 4 C 3 and forming a stable interfacial structure of silicon carbide tile and aluminum . As an example of the present invention, the step (S3a) of forming an aluminum-containing layer can be performed by a liquid-phase pressurizing process, sintering, sputtering or the like.
According to an embodiment of the present invention, the manufacturing method will be described with reference to FIG. 5, wherein the manufacturing method of FIG. 5 includes: preparing a silicon carbide tile (S 1 b); A step (S2b) of surface modification by plating; And forming an aluminum-containing layer (S3b).
The step (S1b) of preparing the silicon carbide tile is the same as the step (S1a).
The surface modification step S2b is a step of forming at least a part of the surface of the silicon carbide tile prepared in the step S1b by metal electroless plating to form a metal plating layer.
In one embodiment of the present invention, the metal plating layer includes nickel, copper, or both and has a thickness of 0.5 to 1.5 占 퐉. When the metal plating layer is contained within the thickness range, the wettability of the aluminum-containing layer and the silicon carbide tile layer can be improved The hardness of the silicon carbide tile layer can be increased.
Step S3b of forming an aluminum-containing layer is a step of forming an aluminum-containing layer on the surface-modified portion of the silicon carbide tile after step S2b to form a silicon carbide tile / aluminum hybrid composite. The formation of the aluminum-containing layer in step S3b may be carried out in the same manner and in the same manner as in step S3a. In one embodiment of the present invention, the metal plating layer formed in step S2b prevents direct contact between the silicon carbide tile and aluminum during the formation of the aluminum-containing layer to inhibit the formation of Al 4 C 3 , For example, Ni x Al y , to improve the interfacial bonding force, thereby providing a stable interfacial structure of silicon carbide tile and aluminum.
According to an embodiment of the present invention, the manufacturing method will be described with reference to FIG. 6, and in FIG. 6, the manufacturing method includes preparing a silicon carbide tile (S1c); A step (S2c) of surface modification by metal powder coating; And forming an aluminum-containing layer (S3c).
The step S1c of preparing the silicon carbide tile is the same as the step S1a.
The step S2c of modifying the surface by the metal powder coating is a step of forming a metal powder coating layer by spray coating a metal powder on at least a part of the surface of the silicon carbide tile.
In one embodiment of the present invention, the metal powder is a silicon powder, and the metal powder coating layer has a thickness of 100 to 250 탆. When the metal powder coating layer is included in the thickness range, the wettability of the aluminum- desirable.
In one example of the present invention, the spray coating may be performed by high-speed flame spraying or plasma spraying, preferably plasma spraying. For example, the plasma spray can spray-coat the metal powder using a plasma gas and a heat source including a gas such as argon, nitrogen, hydrogen, helium and the like.
The step S3c of forming an aluminum-containing layer is a step of forming an aluminum-containing layer on the surface-modified portion of the silicon carbide tile after step S2c to form a silicon carbide tile / aluminum hybrid composite. The formation of the aluminum-containing layer in step S3c may be carried out in the same manner and in the same manner as in step S3a. In step S3c of the present invention, the wettability with aluminum is increased by the metal powder coating layer formed in step S2c, for example, a silicon powder coating layer, and a stable interface structure of silicon carbide tile and aluminum is provided .
According to an embodiment of the present invention, the manufacturing method will be described with reference to FIG. 7, wherein the manufacturing method of FIG. 7 includes preparing a silicon carbide tile (S1d); A step (S2d) of surface modification by nitriding treatment; And forming an aluminum-containing layer (S3d).
The step (S1d) of preparing the silicon carbide tile is the same as the step (S1a).
The step (S2d) of surface modification by nitriding is a step of forming a metal powder coating layer by spray coating a metal powder on at least a part of the outer surface of the silicon carbide tile prepared in step (S1d), and nitriding the metal powder coating layer Layer.
In one embodiment of the present invention, the nitridation treatment may be performed at a temperature of 1400 ° C or higher, preferably 1400 to 1500 ° C, for 1 to 4 hours, preferably 2 to 3 hours, in a nitrogen atmosphere, The thickness can be adjusted according to the temperature and time, preferably 30 탆 to 50 탆 thick, and when the thickness is within the above-mentioned range, the effect of delaying the production of Al 4 C 3 in the bonding layer of the aluminum-containing layer and the silicon carbide tile layer Which is preferable. In one embodiment of the present invention, the metal powder is a silicon powder, and the nitride layer may include Si 3 N 4 .
The step S3d of forming an aluminum-containing layer is a step of forming an aluminum-containing layer on the surface-modified portion of the silicon carbide tile after step S2d to form a silicon carbide tile / aluminum hybrid composite. The formation of the aluminum-containing layer in step S3d may be carried out in the same manner and in the same manner as in step S3a.
In one embodiment of the present invention, step (S3d), the nitride layer formed in step (S2d), for example, by a Si 3 N 4 increases the wettability with the aluminum, to provide a stable surface structure of the silicon carbide tiles as aluminum .
The present invention is not limited thereto but may be embodied in other specific forms without departing from the spirit or scope of the present invention as set forth in the following claims, The present invention can be variously modified and changed.
Example One
A silicon oxide tile having a size of 10 * 10 * 5 cm was oxidized at 1200 ° C for 3 hours in an air atmosphere to form an oxide layer having a thickness of 250 nm on the entire surface of the silicon carbide tile. A silicon carbide tile / aluminum hybrid composite having an aluminum layer formed on the oxide layer by a liquid-phase pressurizing process was prepared.
Example 2
The silicon carbide tile having a size of 10 * 10 * 5 cm was oxidized at 1300 ° C for 3 hours in the atmosphere to form an oxide layer having a thickness of 500 nm on the entire surface of the silicon carbide tile. A silicon carbide tile / aluminum hybrid composite having an aluminum layer formed on the oxide layer by a liquid-phase pressurizing process was prepared.
Example 3
The silicon carbide tile having a size of 10 * 10 * 5 cm was oxidized at 1400 ° C for 3 hours in an air atmosphere to form an oxide layer having a thickness of 700 nm on the entire surface of the silicon carbide tile. A silicon carbide tile / aluminum hybrid composite having an aluminum layer formed on the oxide layer by a liquid-phase pressurizing process was prepared.
Example 4
A silicon powder having a size of 10 * 10 * 5 cm and a size of 38 탆 was spray-coated on the silicon carbide tile three times for 90 seconds to form a 200 탆 -thick silicon powder coating layer on the entire surface of the silicon carbide tile. A silicon carbide tile / aluminum hybrid composite material having an aluminum layer formed on a silicon powder coating layer by a liquid pressurizing process was prepared.
Example 5
A silicon powder having a size of 10 * 10 * 5 cm was spray-coated on the silicon carbide tile at a temperature of 1400 占 폚 for 3 hours in a nitrogen atmosphere at a temperature of 40 占 퐉 Of Si 3 N 4 layer was formed. A silicon carbide tile / aluminum hybrid composite having an aluminum layer formed on the Si 3 N 4 layer by a liquid pressurization process was prepared.
Example 6
The silicon carbide tile having a size of 10 * 10 * 5 cm was plated for 15 minutes at a temperature of 90 to 100 占 폚 of the electroless plating solution to form a 1 占 퐉 -thick nickel plated layer on the entire surface of the silicon carbide tile. A silicon carbide tile / aluminum hybrid composite material having an aluminum layer formed on the nickel plating layer by a liquid pressurizing process was prepared.
Comparative Example One
A silicon carbide tile / aluminum hybrid composite with an aluminum layer formed on the entire surface of a silicon carbide tile whose surface was not modified was subjected to a liquid pressurization process.
Experimental Example One
The wetting angles of the composites of Examples 1 to 6 and Comparative Example 1 were measured using the standard method of ASTM D7334-08 and shown in FIG.
Experimental Example 2
The bonding strengths of the composite materials of Example 1, Examples 3 to 6, and Comparative Example 1 were measured using the standard method for measurement of the push-out interface strength, and the results are shown in FIG.
8 and 9, the silicon carbide tile / aluminum hybrid composites of Examples 1 to 6 made from the silicon carbide tiles surface-modified by the method of the present invention had an Al 4 C 3 was suppressed and retarded, it was confirmed that the wetting angle was increased and the interfacial bonding force was significantly increased. In particular, when the SiO 2 layer is formed as a bonding layer as in Examples 1 to 3, it can be confirmed that the interfacial bonding strength of the hybrid composite material is increased most.
Claims (9)
An aluminum layer formed on at least a portion of an outer surface of the silicon carbide tile;
/ RTI >
A bonding layer between the silicon carbide tile and the aluminum layer,
The bonding layer may be formed,
An oxide layer formed by oxidizing at least a part of a surface of the silicon carbide tile; / RTI >
Wherein the oxide layer has a thickness of 200 nm to 800 nm.
Wherein the oxide layer comprises < RTI ID = 0.0 > SiO2. ≪ / RTI >
It said bonding layer is Al 4 C 3 - to the free phosphorus, silicon carbide tile / aluminum hybrid composite.
Surface-modifying at least a portion of the surface of the silicon carbide tile; And
Forming an aluminum layer on the surface-modified portion of the silicon carbide tile;
Lt; / RTI >
Wherein the surface modification comprises:
Wherein at least a portion of the surface of the silicon carbide tile is oxidized to form an oxide layer.
Wherein the oxide layer comprises SiO2. ≪ RTI ID = 0.0 > 11. < / RTI >
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| KR1020150132793A KR101737218B1 (en) | 2015-09-21 | 2015-09-21 | Silicon carbide tile/aluminium hybride composites and method for manufacturing thereof |
| PCT/KR2015/013637 WO2017051992A1 (en) | 2015-09-21 | 2015-12-14 | Hybrid composite comprising silicon carbide tile and aluminum, and manufacturing method therefor |
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| KR1020150132793A KR101737218B1 (en) | 2015-09-21 | 2015-09-21 | Silicon carbide tile/aluminium hybride composites and method for manufacturing thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001010874A (en) * | 1999-03-27 | 2001-01-16 | Nippon Hybrid Technologies Kk | Production of composite material of inorganic material with metal containing aluminum and product related to the same |
| JP2003301252A (en) * | 2002-04-12 | 2003-10-24 | Tocalo Co Ltd | Composite cermet covering member and manufacturing method thereof |
| JP2012246172A (en) | 2011-05-27 | 2012-12-13 | Toyo Tanso Kk | Joined body of metal material and ceramics-carbon composite material, and method for producing the same |
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| JP3085455B2 (en) * | 1997-06-25 | 2000-09-11 | 日本電気株式会社 | Static RAM |
| JP3698571B2 (en) * | 1998-11-12 | 2005-09-21 | 電気化学工業株式会社 | Silicon carbide based composite and method for producing the same |
| JP2001332668A (en) * | 2000-05-22 | 2001-11-30 | Hitachi Metals Ltd | Al-SiC COMPOSITE UNIT |
| US20090075056A1 (en) * | 2006-05-09 | 2009-03-19 | Denki Kagaku Kogyo Kabushiki Kaisha | Aluminum-silicon carbide composite body and method for processing the same |
| KR101512765B1 (en) * | 2014-04-07 | 2015-04-16 | 주식회사 티앤머티리얼스 | Molding appratus of aluminum/silicon carbide composite and method for manufacturing using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001010874A (en) * | 1999-03-27 | 2001-01-16 | Nippon Hybrid Technologies Kk | Production of composite material of inorganic material with metal containing aluminum and product related to the same |
| JP2003301252A (en) * | 2002-04-12 | 2003-10-24 | Tocalo Co Ltd | Composite cermet covering member and manufacturing method thereof |
| JP2012246172A (en) | 2011-05-27 | 2012-12-13 | Toyo Tanso Kk | Joined body of metal material and ceramics-carbon composite material, and method for producing the same |
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