KR101736841B1 - Apparatus and method for treating substrate - Google Patents

Apparatus and method for treating substrate Download PDF

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Publication number
KR101736841B1
KR101736841B1 KR1020150123073A KR20150123073A KR101736841B1 KR 101736841 B1 KR101736841 B1 KR 101736841B1 KR 1020150123073 A KR1020150123073 A KR 1020150123073A KR 20150123073 A KR20150123073 A KR 20150123073A KR 101736841 B1 KR101736841 B1 KR 101736841B1
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South Korea
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gas
supply
valve
line
delete delete
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KR1020150123073A
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Korean (ko)
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KR20170026940A (en
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홍성환
이승배
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세메스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

The present invention relates to a substrate processing apparatus, and a substrate processing apparatus according to an embodiment of the present invention includes: a chamber in which a processing space for performing a process is formed; A support unit located in the processing space and supporting the substrate; A gas supply unit for supplying gas into the chamber; And a plasma generation unit that excites the gas supplied into the chamber with a plasma, wherein the plasma generation unit is provided so as to face the support unit and is formed with injection holes, Wherein the gas supply unit comprises: a reservoir for storing the gas; A gas distributor for distributing the gas supplied from the reservoir to the showerhead; A supply line connecting the storage part and the gas distributor; A supply valve provided in the supply line to control the flow of the gas; A plurality of distribution lines for distributing the gases from the gas distributor to the two or more regions of the showerhead, respectively; A plurality of control valves respectively provided in the plurality of distribution lines to control the flow of the gas; And a controller for independently controlling the supply valve and the plurality of control valves.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus and method, and more particularly, to an apparatus and a method for processing a substrate using plasma.

In order to manufacture a semiconductor device, a substrate is subjected to various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning to form a desired pattern on the substrate. Among them, the wet etching and the dry etching are used for removing the selected heating region from the film formed on the substrate.

Among them, an etching apparatus using a plasma is used for dry etching. Generally, in order to form a plasma, an electromagnetic field is formed in an inner space of a chamber, and an electromagnetic field excites the process gas provided in the chamber into a plasma state.

Plasma refers to an ionized gas state composed of ions, electrons, radicals, and the like. Plasma is generated by very high temperatures, strong electric fields, or RF electromagnetic fields. The semiconductor device fabrication process employs a plasma to perform an etching process. The etching process is performed by colliding the ion particles contained in the plasma with the substrate.

As the device is gradually miniaturized, a uniform etching rate and selectivity are required. Since the etching process is isotropic etching, an etching deposition gas is supplied to protect the etching of the side walls. However, conventionally, the supply of the etching gas and the deposition gas alternately proceeds, so that the side etching of the pattern is not smooth due to the notching phenomenon formed on the side surface of the pattern. In addition, since the etching gas and the deposition gas can not be separately supplied to the respective regions in the chamber, the etching rate of each region of the substrate is uneven and the selectivity is lowered. In addition, since each gas supply can not be controlled independently, it is difficult to cope with the parameters generated during the process, and the variety of the process has been limited.

The present invention is to provide a substrate processing apparatus and method capable of independently controlling the gas supplied to each region in the chamber to improve the responsiveness to the parameters generated during the process and the diversity of the process.

An object of the present invention is to provide a substrate processing apparatus and method capable of improving the selectivity while improving the etching rate for the side surface of the pattern and improving the etching rate for each side of the substrate.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a substrate processing apparatus.

According to an embodiment of the present invention, there is provided a process chamber comprising: a chamber in which a processing space for performing a process is formed; A support unit located in the processing space and supporting the substrate; A gas supply unit for supplying gas into the chamber; And a plasma generation unit that excites the gas supplied into the chamber with a plasma, wherein the plasma generation unit is provided so as to face the support unit and is formed with injection holes, Wherein the gas supply unit comprises: a reservoir for storing the gas; A gas distributor for distributing the gas supplied from the reservoir to the showerhead; A supply line connecting the storage part and the gas distributor; A supply valve provided in the supply line to control the flow of the gas; A plurality of distribution lines for distributing the gases from the gas distributor to the two or more regions of the showerhead, respectively; A plurality of control valves respectively provided in the plurality of distribution lines to control the flow of the gas; And a controller for independently controlling the supply valve and the plurality of control valves.

According to one embodiment, the shower head includes: a center portion provided to face the center of the supporting unit; And a ring-shaped outer peripheral portion concentric with the center portion and having a diameter different from that of the center portion and provided so as to surround the center portion in the radial direction.

According to an embodiment, the outer frame includes a middle portion and an edge portion sequentially arranged from the center portion in the radial direction of the center portion, and the middle portion is provided so as to have a smaller diameter than the edge portion.

According to an embodiment, the distribution line may include: a first distribution line connecting the gas distributor and the center portion; A second distribution line connecting the gas distributor and the middle portion; And a third distribution line connecting the gas distributor and the edge portion.

According to one embodiment, the control valve includes: a first control valve provided in the first distribution line; A second control valve provided in the second distribution line; And a third control valve provided in the third distribution line, wherein the controller independently controls the first control valve to the third control valve. According to an embodiment, the storage unit stores the etching gas A first storage unit; And a second reservoir for storing a deposition gas, the supply line comprising: a first supply line connecting the first reservoir and the gas distributor; And a second supply line connecting the second reservoir and the gas distributor, wherein the supply valve comprises: a first supply valve provided in the first supply line to control the flow of the etching gas; And a second supply valve provided in the second supply line to control the flow of the deposition gas, wherein the controller independently controls the first supply valve and the second supply valve.

According to one embodiment, there is provided a process chamber comprising: a chamber in which a processing space for performing a process is formed; A support unit located in the processing space and supporting the substrate; A gas supply unit for supplying gas into the chamber; And a plasma generation unit that excites the gas supplied into the chamber with a plasma, wherein the plasma generation unit is provided so as to face the support unit and is formed with injection holes, Wherein the gas supply unit comprises: a reservoir for supplying the gas to the showerhead; A plurality of connection lines for supplying the gas from the storage portion to the two or more regions of the showerhead, respectively; And a plurality of lock valves respectively provided to the plurality of connection lines to control the flow of the gas, and the controller independently controls the plurality of lock valves.

According to one embodiment, the shower head includes: a center portion provided to face the center of the supporting unit; And a ring-shaped outer peripheral portion concentric with the center portion and having a diameter different from that of the center portion and provided so as to surround the center portion in the radial direction.

According to an embodiment, the outer frame includes a middle portion and an edge portion sequentially arranged from the center portion in the radial direction of the center portion, and the middle portion is provided so as to have a smaller diameter than the edge portion.

According to an embodiment, the connecting line may include: a center line for supplying the gas from the storage portion to the center portion; A middle line for supplying the gas from the storage portion to the middle portion; And an edge line for supplying the gas from the storage portion to the edge portion.

According to an embodiment, the lock valve may further include a controller for controlling the lock valve, the lock valve being provided in the center line to control the flow of the gas; A middle valve provided in the middle line for controlling the flow of the gas; And an edge valve provided on the edge line to control the flow of the gas, wherein the controller independently controls the center valve, the middle valve, and the edge valve.

According to an embodiment, the storage unit may include a first storage unit for supplying an etching gas and a second storage unit for supplying a deposition gas, and the connection line may include a first storage unit for connecting the first storage unit and the center unit, Center line; A second center line connecting the second storage unit and the center unit; A first middle line connecting the first storage unit and the middle unit; A second middle line connecting the second storage unit and the middle unit; A first edge line connecting the first storage portion and the edge portion; A second edge line connecting the second storage portion and the edge portion; .

According to an embodiment, the center valve includes a first center valve provided to the first center line and a second center valve provided to the second center line, and the controller controls the first center valve, And independently controls the second center valve.

According to one embodiment, the middle valve comprises: a first middle valve provided in the first middle line; And a second middle valve provided in the second middle line, wherein the controller independently controls the first middle valve and the second middle valve.

According to one embodiment, the edge valve includes a first edge valve provided in the first edge line and a second edge valve provided in the second edge line, and the controller controls the first edge valve and the second edge valve, And independently controls the second edge valve.

The present invention provides a substrate processing method.

According to an embodiment of the present invention, there is provided a method of processing a substrate by exciting a supplied gas with a plasma, comprising the steps of: treating a substrate by supplying an etching gas and a deposition gas to a showerhead partitioned into at least two regions in a horizontal direction, And gas is independently supplied to each of the partitioned regions.

According to one embodiment, the processing is a step of etching the substrate.

According to one embodiment, the processing is a step of etching the oxide film on the substrate.

According to an embodiment, a mixed gas obtained by mixing the etching gas and the deposition gas is supplied to each region of the showerhead, and a mixed gas is independently supplied to each of the regions.

According to an embodiment, the etching gas and the deposition gas are supplied to respective regions of the showerhead, respectively, and the etching gas and the deposition gas are independently supplied to the regions.

According to the embodiments of the present invention, it is possible to easily cope with the parameters generated during the process, and to improve the process diversity.

According to the embodiment of the present invention, it is possible to improve etching on the side surface of the pattern and improve selectivity.

According to the embodiment of the present invention, it is possible to make the etch rate of the substrate uniform.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a view showing a showerhead of the substrate processing apparatus of Fig. 1;
3 is a schematic view showing a gas supply unit according to the first embodiment of the present invention.
Figs. 4 to 6 are views showing an operation example of the gas supply unit according to the first embodiment of Fig.
7 is a schematic view showing a gas supply unit according to a second embodiment of the present invention.
FIGS. 8 to 10 are views showing an operation example of the gas supply unit according to the second embodiment of FIG.
11 to 13 are graphs showing an example in which the gas supply by the gas supply unit of the present invention is turned on / off (ON / OFF) in time.
Fig. 14 is a chart comparing the selection ratio of the present invention with that of the prior art.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

In an embodiment of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. Specifically, a substrate processing apparatus for etching an oxide film on a substrate will be described.

In the embodiment of the present invention, an electrostatic chuck is described as an example of a supporting unit. However, the present invention is not limited to this, and the support unit can support the substrate by mechanical clamping or support the substrate by vacuum.

1 is a sectional view showing a substrate processing apparatus 10 according to a first embodiment of the present invention. The substrate processing apparatus 10 processes the substrate W using plasma. In the embodiment of the present invention, an apparatus for etching a substrate W using plasma is taken as an example. However, the technical features of the present invention are not limited thereto and can be applied to various kinds of apparatuses for processing the substrate W using plasma.

Referring to FIG. 1, a substrate processing apparatus 10 includes a chamber 100, a support unit 200, a gas supply unit 300, and a plasma generation unit 400.

The chamber 100 has a space for performing a process inside. An exhaust hole 103 is formed in the bottom surface of the chamber 100. The exhaust hole 103 is connected to the exhaust line 121 on which the pump 122 is mounted. The reaction byproducts generated in the process and the gas remaining in the chamber 100 are exhausted to the exhaust hole 103 through the exhaust line 121. Therefore, it can be discharged to the outside of the chamber 100. Further, the inner space of the chamber 100 is reduced in pressure to a predetermined pressure by the evacuation process.

An opening 104 is formed in the side wall of the chamber 100. The opening 104 functions as a passage through which the substrate moves into and out of the chamber 100. The opening 104 is opened and closed by a door assembly (not shown). According to one example, a door assembly (not shown) has an outer door, an inner door, and a connecting plate. The outer door is provided on the outer wall of the chamber. The inner door is provided on the inner wall of the chamber. The outer door and the inner door are fixedly coupled to each other by a connecting plate. The connecting plate is provided to extend from the inside to the outside of the chamber through the opening. The door driver moves the outer door vertically. The door driver may include a hydraulic cylinder or a motor.

In the lower region of the interior of the chamber 100, the supporting unit 200 is positioned. The support unit 200 supports the substrate W by an electrostatic force. Alternatively, the support unit 200 may support the substrate W in a variety of ways, such as mechanical clamping.

The support unit 200 has a support plate 210, a ring assembly 260, and a supply line portion 270. The substrate W is placed on the support plate 210. The support plate 210 has a base 220 and an electrostatic chuck 240. The electrostatic chuck 240 supports the substrate W on its upper surface by an electrostatic force. The electrostatic chuck 240 is fixedly coupled to the base 220.

The ring assembly 260 is provided in a ring shape. The ring assembly 260 is provided to surround the perimeter of the support plate 210. In one example, the ring assembly 260 is provided to surround the electrostatic chuck 240. The ring assembly 260 supports the edge region of the substrate W. [ According to one example, the ring assembly 260 has a focus ring 262 and an insulating ring 264. A focus ring 262 is provided to surround the electrostatic chuck 240 and focus the plasma onto the substrate W. [ An insulating ring 264 is provided to enclose the focus ring 262. Optionally, the ring assembly 260 may include an edge ring (not shown) provided in close contact with the periphery of the focus ring 262 to prevent the side of the electrostatic chuck 240 from being damaged by the plasma. Unlike the above, the structure of the ring assembly 260 can be variously changed.

The supply line portion 270 includes a gas supply source 272 and a supply line 274. A supply line 274 is provided between the ring assembly 260 and the support plate 210. The supply line 274 supplies gas to remove foreign matter remaining on the upper surface of the ring assembly 260 or the edge region of the support plate 210. In one example, the gas may be nitrogen gas (N 2 ). Optionally, another gas or detergent can be supplied. The supply line 274 may be formed to connect between the focus ring 262 and the electrostatic chuck 240 within the support plate 210. Alternatively, the supply line 274 may be provided within the focus ring 262 and may be configured to be bent to be coupled between the focus ring 262 and the electrostatic chuck 240.

According to one example, the electrostatic chuck 240 is provided with a ceramic material, the focus ring 262 is provided with a silicon material, and the insulating ring 264 can be provided with a quartz material. The electrostatic chuck 240 or the base 220 may be provided with a heating member 282 and a cooling member 284 for keeping the substrate W at a processing temperature during the process. The heating member 282 may be provided with a hot wire. The cooling member 284 may be provided as a cooling line through which refrigerant flows. According to one example, the heating member 282 may be provided in the electrostatic chuck 240, and the cooling member 284 may be provided in the base 220.

The plasma generation unit 400 generates a plasma from the gas staying in the discharge space. The discharge space corresponds to the upper region of the support unit 200 in the chamber 100. The plasma generation unit 400 may have a capacitive coupled plasma source.

The plasma generating unit 400 has an upper electrode 420, a lower electrode 440, an upper power source 430, a lower power source 460, and a matching network 470.

The upper electrode 420 and the lower electrode 440 are vertically opposed to each other. The upper electrode 420 has a showerhead 422 and a ring assembly 424. The showerhead 422 is positioned opposite the electrostatic chuck 240 of the support unit 200 and can be provided with a larger diameter than the electrostatic chuck 240. The shower head 422 is provided with a plurality of injection holes 422a for injecting gas. A ring assembly 424 is provided to enclose the showerhead 422.

Fig. 2 is a view showing a showerhead of the substrate processing apparatus of Fig. 1; Referring to FIG. 2, the showerhead 422 may be divided into two or more regions in the horizontal direction. In one example, the showerhead 422 may include a center portion 424 and an outer portion 426. The center portion 424 is provided so as to face the center of the support unit 200. The gas injected through the center portion 424 and the excited plasma are provided so as to mainly reach the central region of the substrate placed in the support unit 200.

The outer frame portion 426 has the same center as the center of the center portion 424. The diameter of the outer frame portion 426 is larger than the diameter of the center portion 424. Accordingly, the outer frame portion 426 is provided in a ring shape arranged in the radial direction and surrounding the center portion 424. [

At least one outer frame portion 426 may be provided. For example, the outer frame portion 426 may be two. The outer frame portion 426 may include a middle portion 426a and an edge portion 426b. The middle portion 426a and the edge portion 426b are sequentially arranged in the radial direction of the center portion 424. [ Therefore, when viewed in the horizontal direction, the middle portion 426a and the edge portion 426b are sequentially arranged. The middle portion 426a is provided so as to have a smaller diameter than the edge portion 426b. The gas injected through the edge portion 426b and the excited plasma can mainly reach the edge of the substrate placed in the support unit 200. [ The gas injected through the middle portion 426a and the excited plasma can mainly reach the inside of the edge of the substrate placed in the support unit 200. [

The ring assembly 424 may be provided in contact with the showerhead 422 to be electrically connected to the showerhead 422. The ring assembly 424 may be provided in close contact with the shower head 422. According to one example, the showerhead 422 may be provided with silicon. Alternatively, the showerhead 422 may be provided of a metal material. The ring assembly 424 may be provided in the same material as the shower head 422. The lower electrode 440 may be provided in the electrostatic chuck 240.

The upper electrode 420 may be powered by the upper power source 430. The top power supply 430 controls the characteristics of the plasma. That is, the upper power source 430 regulates ion bombardment energy. Also, the upper power supply 430 generates plasma. However, the upper power source 430 mainly contributes to controlling the plasma characteristics as compared with the first lower power source 462 and the third lower power source 466, which will be described later.

The lower electrode 440 may be provided in the electrostatic chuck 240. RF power may be applied to the lower electrode 440 by the lower power source 460. The lower power source 460 may include a first lower power source 462 and a second lower power source 464. The lower power supply 460 serves as a plasma source for generating a plasma or controls the plasma characteristics.

The matching network 470 is electrically connected to the first lower power source 462 and the second lower power source 464 and applies frequency powers of different sizes to the lower electrode.

3 is a schematic view showing a gas supply unit according to the first embodiment of the present invention. The gas supply unit 300 supplies the process gas into the chamber 100. The gas supply unit 300 includes a reservoir 310, a supply line 320, a gas distributor 330, a supply valve 322, a distribution line 332, a control valve 334 and a controller 700 .

The storage unit 310 stores gas used for the substrate processing. The reservoir 310 supplies gas to the showerhead 422. The storage unit 310 may include a first storage unit 310a and a second storage unit 310b. The first storage unit 310a stores the etching gas. The etching gas may be a fluorine etching gas, a chlorine etching gas, a bromine etching gas, or the like. For example, the etching gas may be SF 6 or CF 4 . The etching gas etches the substrate. The second storage unit 310b stores the deposition gas. The deposition gas protects the side surfaces of the substrate pattern to enable anisotropic etching. The deposition gas may be C 4 F 8 , C 2 F 4, or the like.

The gas distributor 330 is connected to the first storage unit 310a and the second storage unit 310b. The gas distributor 330 distributes the gas supplied from the storage part 310 to the showerhead 422 again. In the gas distributor 330, an etching gas and a deposition gas may be mixed.

The supply line 320 connects the storage 310 to the gas distributor 330. The supply line 320 may include a first supply line 320a and a second supply line 320b. The first supply line 320a connects the first reservoir 310a and the gas distributor 330. [ The second supply line 320b connects the second reservoir 310b and the gas distributor 330. [ The supply line 320 may be provided with a supply valve 322. The supply valve 322 can turn on / off the supply of gas or adjust the flow rate. The first supply line 320a may be provided with a first supply valve 322a. The first supply valve 322a controls the flow of the etching gas. The second supply line 320b may be provided with a second supply valve 322b. The second supply valve 322b controls the flow of the deposition gas.

The dispensing line 332 supplies the gas mixture in the gas distributor 330 to each of the compartmentalized areas of the showerhead 422. For example, a plurality of distribution lines may be connected to the center portion 424, the middle portion 426a, and the edge portion 426b, respectively. In one example, dispense line 332 may include a first dispense line 332a, a second dispense line 332b, and a third dispense line 332c. The first distribution line 332a may connect the gas distributor 330 and the center portion 424. The second distribution line 332b may connect the gas distributor 330 and the middle portion 426a. The third distribution line 332c may connect the gas distributor 330 and the edge portion 426b.

The control valve 334 controls the flow of the gas flowing on the distribution line 332. The control valve 334 can turn on / off the gas flow on the distribution line 332 or adjust the flow rate. The control valve 334 may include a first control valve 334a, a second control valve 334b, and a third control valve 334c. The first control valve 334a is provided on the first distribution line 332a. The first control valve 334a controls the flow of the gas supplied to the center portion 424. And the second control valve 334b is provided on the second distribution line 332b. The second control valve 334b controls the flow of gas supplied to the middle portion 426a. The third control valve 334c is provided on the third distribution line 332c. The third control valve 334c controls the flow of the gas supplied to the edge portion 426b.

The controller 700 can independently control the supply valve 322 and the control valve 334, respectively. The controller 700 allows the first supply valve 322a and the second supply valve 322b and the first to third control valves 334a to 334c to be independently controllable.

Conventionally, the amount of gas supplied to the showerhead 422 can not be controlled independently for each region. Therefore, the number of cases of supplying the etching gas or the deposition gas by the area of the shower head 422 is limited, and it has been difficult to perform appropriate processing steps for each region of the substrate. However, the present invention provides a control valve 334 that can control the flow of gas to each dispense line 332, so that it can adequately cope with various variables that occur during the process. For example, the etching of the substrate can be efficiently performed by supplying, shutting off, or controlling the flow rate of the gas to the showerhead 422 opposed to the region requiring treatment out of the region of the substrate. In addition, supplying gas to each region of the showerhead 422 can be further subdivided. As a result, the etching rate of the substrate can be made uniform. Further, there is an effect of further improving the selection ratio while further improving the etching of the side surface of the pattern.

Figs. 4 to 6 are diagrams showing several operation examples through valve control in the gas supply unit. Fig. As shown in Figs. 4-6, the first supply line 320a, the second supply line 320b as well as the first to third distribution lines 332a to 332c are provided with valves, The substrate is treated by supplying the etching gas or the deposition gas to the respective showerheads 422 differently in the state where the valves of the showerhead 422 are independently opened or closed or the flow rate is adjusted. Further, when both the etching gas and the deposition gas are supplied, the etching on the side of the substrate pattern becomes smooth and can be improved.

7 is a schematic view showing a gas supply unit 1310 according to a second embodiment of the present invention. In the first embodiment described above, the etching gas and the deposition gas are mixed through the gas distributor 330 and supplied to the respective shower heads 422. When the etching gas and the deposition gas are simultaneously supplied to the showerhead 422 and introduced into the chamber, the etching process and the deposition process are simultaneously performed. However, when it is necessary to perform only the etching process or the deposition process or selectively perform the etching process or the deposition process for each region of the substrate in the process of the substrate, a different kind of gas is supplied to each region of the showerhead 422 It is efficient to supply. Further, in such a case, the flow rate of the specific gas can be adjusted and supplied to each region of the showerhead 422.

Hereinafter, with reference to FIG. 7, the second embodiment will be described focusing on differences from the first embodiment.

In the gas supply unit 1300, the etching gas and the deposition gas are not mixed with each other, but are directly connected to the shower head 1422 through separate paths. Further, each of the gases supplied to each showerhead 1422 is independently controllable individually.

The gas supply unit 1300 includes a connection line 1320 instead of the supply line 320, the distribution line 332 of the first embodiment. The gas supply unit 1300 may also include a lock valve 1330 provided on the connection line 1320. In addition, a center line 1340 may be included in front of each connection line 1320. The center line 1340 may include a first center line 1340a and a second center line 1340b. The first central line 1340a connects the first storage unit 1310a and the connection lines 1320. [ The first central line 1340a may be provided with a first central valve 1342a. The first central valve 1342a can control the supply of the etching gas from the first reservoir 1310a. The second central line 1340b connects the second storage unit 1310b and the connection lines 1320. [ A second central valve 1342b may be provided in the second central line 1340b. The second central valve 1342b can control the supply of the deposition gas from the second storage part 1310b.

A connection line 1320 connects each of the showerheads 1422 to each of the storage units 1310. [ The connection line 1320 may include a center line 1322, a middle line 1324, and an edge line 1326.

The center line 1322 connects the storage unit 1310 and the center unit 1424. The center line 1322 supplies gas from the storage portion 1310 to the center portion 1424. The center line 1322 includes a first center line 1322a and a second center line 1322b. The first center line 1322a connects the first storage unit 1310a and the center unit 1424. [ The first center line 1322a supplies the etching gas from the first storage part 1310a to the center part 1424. [ The second center line 1322b connects the second storage unit 1310b and the center unit 1424. [ The second center line 1322b supplies the deposition gas to the center portion 1424 from the second storage portion 1310b.

The middle line 1324 connects the storage portion 1310 and the middle portion 1426a. The middle line 1324 supplies gas from the reservoir 1310 to the middle portion 1426a. Middle line 1324 includes a first middle line 1324a and a second middle line 1324b. The first middle line 1324a connects the first storage portion 1310a and the middle portion 1426a. The first middle line 1324a supplies the etching gas from the first reservoir 1310a to the middle portion 1426a. The second middle line 1324b connects the second storage portion 1310b and the middle portion 1426a. The second middle line 1324b supplies the deposition gas from the second storage portion 1310b to the middle portion 1426a.

The edge line 1326 connects the storage portion 1310 and the edge portion 1426b. The edge line 1326 supplies gas from the storage portion 1310 to the edge portion 1426b. The edge line 1326 includes a first edge line 1326a and a second edge line 1326b. The first edge line 1326a connects the first storage portion 1310a and the edge portion 1426b. The first edge line 1326a supplies the etching gas from the first reservoir 1310a to the edge portion 1426b. The second edge line 1326b connects the second storage portion 1310b and the edge portion 1426b. The second edge line 1326b supplies the deposition gas from the second storage portion 1310b to the edge portion 1426b.

The lock valve 1330 controls the flow of gas flowing on the connection line 1320. The lock valve 1330 can turn on / off the gas flow on the connection line 1320 or adjust the flow rate. The lock valve 1330 may include a center valve 1332, a middle valve 1334, and an edge valve 1336.

The center valve 1332 includes a first center valve 1332a and a second center valve 1332b. The first center valve 1332a is provided on the first center line 1322a. The first center valve 1332a controls the flow of the etching gas supplied to the center portion 1424. [ And the second center valve 1332b is provided on the second center line 1322b. The second center valve 1332b controls the flow of the deposition gas supplied to the center portion 1424. [

The middle valve 1334 includes a first middle valve 1334a and a second middle valve 1334b. A first middle valve 1334a is provided on the first middle line 1324a. The first middle valve 1334a controls the flow of the etching gas supplied to the middle portion 1426a. A second middle valve 1334b is provided on the second middle line 1324b. The second middle valve 1334b controls the flow of the deposition gas supplied to the middle portion 1426a.

The edge valve 1336 includes a first edge valve 1336a and a second edge valve 1336b. A first edge valve 1336a is provided on the first edge line 1326a. The first edge valve 1336a controls the flow of the etching gas supplied to the edge portion 1426b. A second edge valve 1336b is provided on the second edge line 1326b. The second edge valve 1336b controls the flow of the deposition gas supplied to the edge portion 1426b.

The controller 1700 can control the lock valves 1330 independently of each other. The controller 1700 includes a first center valve 1332a, a second center valve 1332b, a first middle valve 1334a, a second middle valve 1334b, a first edge valve 1336a, (1336b) independently and individually. Thus, the etching gas and the deposition gas can be supplied individually to the respective regions of the showerhead 1422, or together. The flow rate of the supplied gas can also be controlled. As a result, it is possible to diversify the processing steps by varying the gas supply. Therefore, it is possible to uniform the etch rate of each region of the substrate. And the selectivity can be improved to improve the efficiency of the entire process. In addition, the etching of the substrate pattern side can be improved by supplying the etching gas and the deposition gas together to select the substrate by region.

Figs. 8 to 10 are diagrams showing several operational examples by controlling the valves of the gas supply unit 1300 according to the second embodiment. Shaded lock valve 1330 means closed. However, the lock valve 1330 may be completely opened or completely closed, but only a part of the lock valve 1330 may be closed to adjust the gas flow rate. The substrate is treated by supplying the etching gas or the mounting gas to the respective shower heads 1422 differently in the state where the lock valves 1330 are independently opened or closed or the flow rate is adjusted.

Figs. 11 to 13 are graphs showing, over time, several examples in which gas is supplied by the gas supply unit of the first embodiment or the second embodiment of the present invention.

As described above, the etching gas and the deposition gas may be supplied to the showerhead 1422 together, and the gas may be supplied in such a manner that only one of them is supplied. Such as the center portion 1424, the middle portion 1426a and the edge portion 1426b, and in this way the respective regions of the showerhead 1422 are shown to be individually connected to each other The gas may be supplied to form another pulse. In addition, the gas supply can be supplied with different flow rates even when the gas supply is ON (ON), not simply ON / OFF (ON / OFF).

14 is a table comparing the selection ratio of the present invention with that of the prior art. It can be seen that the efficiency of the substrate processing process is improved by appropriately controlling the supply of the etching gas and the deposition gas according to the present invention. For example, FIG. 14 shows that the selectivity ratio between the silicon nitride (SiN) film and the silicon oxide (SiO 2 ) film is remarkably improved. There is no provision of a valve for controlling the flow of gas on the distribution line 332 (first embodiment) or the connection line 1320 (second embodiment), which is conventionally connected directly to each showerhead. The present invention is the case where a substrate is processed while controlling the flow of gas through a valve on a distribution line 332 or a connection line 1320 connected to each of the showerheads 422 and 1422. Referring to FIG. 14, the thickness of the remaining silicon nitride (SiN) film is increased by about 30%, and the selectivity is improved by about 45%.

In the above-described embodiment, the showerhead is provided in three areas, i.e., the center part, the middle part, and the edge part, but it may be provided in two areas. Or may be provided in four or more areas.

Although the lower power source 460 includes the first lower power source 462 and the second lower power source 464 in the above embodiment, the second lower power source 464 may be omitted .

Although the gas distributor 330 is provided in the first embodiment, the gas distributor may be omitted. At this time, the first supply line 320a and the second supply line 320b are brought into contact with each other, so that the etching gas and the deposition gas can be mixed in the supply line.

Although the center line 1340 and the center valve 1342 are provided in the second embodiment, the center line and the central valve may be omitted.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: chamber 200: support unit
300: gas supply unit 400: plasma generation unit
422: shower head 424: center part
426: outer frame 700: controller

Claims (20)

An apparatus for processing a substrate,
A chamber in which a processing space for performing a process is formed;
A support unit located in the processing space and supporting the substrate;
A gas supply unit for supplying gas into the chamber; And
And a plasma generation unit that excites the gas supplied into the chamber with a plasma,
The plasma generation unit includes:
And a shower head provided opposite to the support unit and formed with injection holes and partitioned into at least two areas in the horizontal direction,
The gas supply unit includes:
A first storage unit for storing an etching gas;
A second storage unit for storing a deposition gas;
A gas distributor for mixing the etching gas supplied from the first and second storage parts and the deposition gas to distribute the mixed gas to the showerhead;
A supply line connecting the first and second reservoirs to the gas distributor;
A supply valve provided in the supply line to control the flow of the etching gas and the deposition gas;
A plurality of distribution lines for distributing the mixed gas from the gas distributor to the two or more regions of the showerhead, respectively;
A plurality of control valves located between said gas distributor and said at least two regions of said showerhead, said control valves being respectively provided to said plurality of distribution lines to control the flow of said mixed gas; And
Controlling the supply valve to control the ratio of the etching gas and the deposition gas of the mixed gas and controlling the plurality of control valves independently to control the mixed gas supplied to the two or more regions of the showerhead And a controller for controlling the flow rate of the substrate.
The method according to claim 1,
The shower head includes:
A center portion provided opposite to a center of the support unit;
And a ring-shaped outer frame portion concentric with the center portion and having a diameter different from that of the center portion and provided so as to surround the center portion in a radial direction.
3. The method of claim 2,
Wherein the outer frame portion includes a middle portion and an edge portion sequentially arranged in the radial direction of the center portion from the center portion,
Wherein the middle portion has a diameter smaller than that of the edge portion,
The method of claim 3,
Wherein the distribution line comprises:
A first distribution line connecting the gas distributor and the center section;
A second distribution line connecting the gas distributor and the middle portion; And
And a third distribution line connecting the gas distributor and the edge portion.
5. The method of claim 4,
Wherein the control valve comprises:
A first control valve provided in the first distribution line;
A second control valve provided in the second distribution line; And
And a third control valve provided in the third distribution line.
6. The method according to any one of claims 1 to 5,
Wherein the supply line includes:
A first supply line connecting the first reservoir and the gas distributor;
And a second supply line connecting the second reservoir and the gas distributor,
Wherein the supply valve comprises:
A first supply valve provided in the first supply line to control the flow of the etching gas;
And a second supply valve provided in the second supply line to control the flow of the deposition gas,
Wherein the controller independently controls the first supply valve and the second supply valve.
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KR1020150123073A 2015-08-31 2015-08-31 Apparatus and method for treating substrate KR101736841B1 (en)

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KR101966806B1 (en) * 2017-09-01 2019-04-09 세메스 주식회사 Substrate treating apparatus and substrate treating method
KR102344450B1 (en) * 2017-09-26 2021-12-28 세메스 주식회사 Substrate processing apparatus and method
KR102443036B1 (en) * 2018-01-15 2022-09-14 삼성전자주식회사 Plasma processing apparatus
KR102477354B1 (en) * 2018-03-29 2022-12-15 삼성전자주식회사 Plasma processing apparatus including gas distribution plate
KR102592414B1 (en) * 2020-11-23 2023-10-20 세메스 주식회사 An unit for controlling an electrode and an apparatus for treating a substrate with the unit

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2011086776A (en) * 2009-10-15 2011-04-28 Mitsubishi Electric Corp Thin film forming apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011086776A (en) * 2009-10-15 2011-04-28 Mitsubishi Electric Corp Thin film forming apparatus

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