KR101729382B1 - Method of manufacturing aluminium foil, aluminium foil having high dielectric constant, electrolytic capacitor having the aluminium foil and apparatus for manufacturing aluminium foil - Google Patents
Method of manufacturing aluminium foil, aluminium foil having high dielectric constant, electrolytic capacitor having the aluminium foil and apparatus for manufacturing aluminium foil Download PDFInfo
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- KR101729382B1 KR101729382B1 KR1020150026906A KR20150026906A KR101729382B1 KR 101729382 B1 KR101729382 B1 KR 101729382B1 KR 1020150026906 A KR1020150026906 A KR 1020150026906A KR 20150026906 A KR20150026906 A KR 20150026906A KR 101729382 B1 KR101729382 B1 KR 101729382B1
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- metal oxide
- aluminum foil
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- oxide sol
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000003990 capacitor Substances 0.000 title claims abstract description 32
- 239000005030 aluminium foil Substances 0.000 title 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 89
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000011888 foil Substances 0.000 claims abstract description 86
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 67
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 67
- 239000011148 porous material Substances 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000001035 drying Methods 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000007743 anodising Methods 0.000 claims description 5
- 238000005470 impregnation Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 36
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 22
- 239000010408 film Substances 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000007654 immersion Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Treatment Of Metals (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
In a method for producing an aluminum foil for an electrolytic capacitor, an aluminum foil having a high dielectric constant, and an apparatus for manufacturing the same, a manufacturing method includes the steps of: impregnating a porous aluminum foil containing a plurality of etching- A drying step of drying the aluminum foil coated with the metal oxide sol in a non-vacuum state, a sintering step of sintering the dried coating film, an aluminum foil having a sintered coating film formed thereon, To form a composite oxide layer including an aluminum oxide layer and a metal oxide layer stacked on the inner wall surface inside the etching-pores.
Description
The present invention relates to a method for producing an aluminum foil for an electrolytic capacitor, an aluminum foil having a high dielectric constant, an electrolytic capacitor including the same, and an apparatus for producing the aluminum foil. More particularly, An electrolytic capacitor including the aluminum foil, and an apparatus for manufacturing the aluminum foil.
BACKGROUND ART [0002] Electrolytic capacitors having a small size and large capacitance have been used in many electronic devices. In an aluminum electrolytic capacitor using an alumina layer (Al 2 O 3 ) formed by anodic oxidation of 99.99% or more of a high purity aluminum foil as a dielectric, theoretically, the effective surface area of the electrode is increased or the thickness of the dielectric layer is reduced Or by increasing the dielectric constant of the dielectric layer, the capacitance of the electrolytic capacitor can be increased.
However, there is a limitation in minimizing the thickness of the dielectric layer due to deterioration of the withstand voltage characteristic. Techniques for increasing the effective surface area of the electrodes have been continuously developed. However, there is a limitation in achieving the miniaturization of capacitors and improving the withstand voltage characteristics.
To solve this problem, research has been conducted on the development of a dielectric layer having a dielectric constant higher than that of alumina having a dielectric constant of about 8 to 9, which is conventionally used. An oxide layer such as zirconium oxide (ZrO 2 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ) or the like is coated by a sol-gel method and used as a dielectric layer. Since the oxide layer has a high dielectric constant of 20 or more, it can contribute to the miniaturization of the capacitor compared to the alumina layer of the same thickness. The oxide films as described above may be used alone or in the form of a separately formed alumina layer.
At this time, the oxide films are easily coated on the flat thin film, but it is not easy to coat the thin film on the surface through the sol-gel method. That is, in an aluminum electrolytic capacitor, a plurality of pores or pits are formed through etching on the surface of a flat aluminum foil to increase the effective surface area. In this case, the inside diameter of the pores is generally 1 to 2 μm And has a length of 10 to 50 mu m, it is difficult to uniformly coat the oxide film on the inner wall of the pores by the sol-gel method. Accordingly, there is a limit in improving the capacitance of the capacitor and it is difficult to maintain the withstand voltage.
It is an object of the present invention to provide a method of manufacturing an aluminum foil in which a metal oxide layer is uniformly coated on the inner wall of a pore of an aluminum foil.
Another object of the present invention is to provide an aluminum foil having a high dielectric constant and a high dielectric constant by uniformly coating a metal oxide layer on the inner wall of a pore of an aluminum foil.
It is still another object of the present invention to provide an electrolytic capacitor comprising the aluminum foil.
It is still another object of the present invention to provide an apparatus for producing the aluminum foil.
A method of manufacturing an aluminum foil according to an embodiment of the present invention is provided. The method includes the steps of impregnating a porous aluminum foil containing a plurality of etch-pores in a vacuum state with a metal oxide sol contained in a chamber, a step of recovering a metal oxide sol remaining in the chamber, A drying step of drying the coated aluminum foil, a sintering step of sintering the dried coating film, and an anodic oxidation of the aluminum foil on which the sintered coating film is formed to form an aluminum oxide layer and a metal oxide layer stacked on the inner wall surface of the etching- To form a composite oxide layer.
In the above manufacturing method, the cycle including the impregnation step, the recovery step and the drying step may be repeatedly performed before the sintering step is performed or before the sintered aluminum foil is anodized.
In one embodiment, the method may further comprise a pressurizing step in which the aluminum foil is impregnated with the metal oxide sol before the recovery step is performed. At this time, the cycle including the impregnation step, the pressurization step, the recovery step and the drying step may be repeatedly performed before the sintering step or before the anodizing of the sintered aluminum foil.
In one embodiment, the step of impregnating the metal oxide sol comprises the steps of disposing an aluminum foil in a chamber in a non-vacuum state, making the chamber in a vacuum state with the aluminum foil placed, . ≪ / RTI >
In one embodiment, the metal oxide sol of the coating material supply portion can be supplied to the chamber by a pressure difference between the coating material supply portion that receives the metal oxide sol and the vacuum chamber.
In one embodiment, the recovering step may adjust the discharge rate of the metal oxide sol from 0.2 mm / s to 10 mm / s based on the height of the metal oxide sol accommodated in the chamber.
In one embodiment, the sintering step may be performed at 350 ° C to 600 ° C.
In one embodiment, the anodization can be performed by applying a current of 20 mA / cm 2 to 50 mA / cm 2 up to a voltage of 100 V to 1000 V.
The aluminum foil having a high dielectric constant according to an embodiment of the present invention is characterized in that in a porous aluminum foil including a plurality of etching pores, a metal foil formed on an alumina layer formed on the inner wall surface of the etching- And an oxide layer.
In one embodiment, the thickness variation of the metal oxide layer may be within 10%.
An electrolytic capacitor including an aluminum foil having a high dielectric constant according to an embodiment of the present invention includes a first electrode structure, a second electrode structure facing the first electrode structure, Wherein at least one of the first electrode structure and the second electrode structure comprises an etch-pores, wherein the porous aluminum foil comprises an electrolyte disposed between the first electrode structure and the second electrode structure, wherein the alumina And a metal oxide layer formed on the layer at a uniform thickness.
An apparatus for producing an aluminum foil having a high dielectric constant according to an embodiment of the present invention includes a chamber in which a porous aluminum foil including a plurality of etching pores is disposed, a coating material supply unit for providing the metal oxide sol as the chamber, Includes a vacuum pump.
In one embodiment, the manufacturing apparatus may further include a gas supply unit connected to the chamber and supplying gas to the chamber so that the aluminum foil is impregnated with the metal oxide sol.
According to the method for producing an aluminum foil for an electrolytic capacitor of the present invention, an aluminum foil having a high dielectric constant and an apparatus for producing the same, a metal oxide layer having a high dielectric constant is uniformly formed in a porous aluminum foil containing a plurality of etching- . It is possible to manufacture an aluminum foil in which a complex oxide layer including both aluminum oxide and a metal oxide layer is formed while increasing the effective surface area of the electrode through the etching-pores, so that the capacitance can be improved in the same volume. As a result, the size of the aluminum electrolytic capacitor can be reduced, and the market competitiveness of the product can be improved.
1 is a flowchart illustrating a method of manufacturing an aluminum foil according to an embodiment of the present invention.
2 is a conceptual diagram for explaining an apparatus for manufacturing an aluminum foil for performing the manufacturing method of FIG.
3 is an electron micrograph of Sample 1 and Comparative Sample 1 according to the present invention.
4 is a graph showing capacitance measurement results of Samples 1 to 3 and Comparative Sample 2 according to the present invention.
5 is a graph showing the results of measurement of breakdown voltage of Samples 1 to 3 and Comparative Sample 2 according to the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the term "comprises" or "having ", etc. is intended to specify that there is a feature, step, operation, element, part or combination thereof described in the specification, , &Quot; an ", " an ", " an "
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.
FIG. 1 is a flow chart for explaining a method of manufacturing an aluminum foil according to an embodiment of the present invention, and FIG. 2 is a conceptual diagram for explaining an apparatus for manufacturing an aluminum foil for performing the manufacturing method of FIG.
Referring to FIGS. 1 and 2, an aluminum foil TG is immersed in a
At this time, the aluminum foil (TG) is immersed in the
Specifically, an aluminum foil (TG) is disposed in the
The
The aluminum foil TG may be attached to the
The
After the aluminum foil TG is immersed in the
The valve connected to the supply flow path is closed to stop the supply of the
If the rate at which the
At this time, before the remaining
As described above, the remaining
Subsequently, a sintering process is performed on the aluminum foil (TG) on which the coating film is formed (step S140), and an anodizing process is performed on the sintered aluminum foil (TG) (step S150) do.
Specifically, the sintering process is a process of crystallizing the coating film, and can be performed at about 350 ° C to about 600 ° C. At this time, the sintering process can be performed for about 10 minutes to about 60 minutes. The sintering process may be performed at atmospheric pressure or under an oxygen atmosphere.
In one example, the sintering process may be performed subsequently after at least one cycle including the above-described immersion process (S110), recovery process (S120), and drying process (130) is performed. Alternatively, the sintering process may be performed subsequent to the immersion step (S110), the collecting step (S120), and the drying step (130) each time the cycle is included in the cycle.
After the sintering process is performed as described above, an anodizing process is performed on the sintered aluminum foil (TG), wherein the anodizing process is performed at a voltage of about 100 V to 1000 V at a rate of 20 mA / cm 2 to 50 mA / cm 2 The aluminum foil TG can be anodized. Particularly, the inner wall surface of the etching pores of the aluminum foil (TG) is oxidized to a predetermined thickness to be converted into aluminum oxide, and a coating film is formed on the metal oxide layer. Since the coating film has a uniform thickness and is formed on the inner wall surface of the etching pores of the aluminum foil TG, ultimately a metal oxide layer having a uniform thickness is formed on the inner wall surface, An aluminum foil including a composite oxide layer which is a mixed layer of a metal oxide layer having a high dielectric constant is formed. Such an aluminum foil can be applied to electrolytic capacitors for high voltage.
According to the above description, a metal oxide layer having a high dielectric constant can be uniformly formed on a porous aluminum foil (TG) including a plurality of etching-pores. It is possible to manufacture an aluminum foil in which a composite oxide layer including both aluminum oxide and a metal oxide layer is formed while increasing the effective surface area of the electrode through the etching-pores. Such an aluminum foil can improve the electrostatic capacitance in the same volume by constructing an electrolytic capacitor together with an electrolyte as an electrode structure. As a result, the size of the aluminum electrolytic capacitor can be reduced, and the market competitiveness of the product can be improved. That is, in an electrolytic capacitor including two electrode structures and an electrolyte interposed therebetween, at least one electrode structure may be composed of the aluminum foil according to the present invention.
Hereinafter, the present invention will be described more specifically with reference to specific examples and comparative examples.
Example 1: Preparation of Sample 1
A zirconia sol solution having a concentration of 0.4 mol / l was prepared by using zirconium n-butoxide (Zr [O (CH 2 ) 3 CH 3 ] 4 ] as a precursor of zirconium oxide. The solvent of the zirconia sol solution was 2-methoxyethanol, [CH 3 OCH 2 CH 2 OH], and acetic acid [CH 3 COOH] was used as an additive. In the preparation of the zirconia sol solution, the molar ratio of zirconium to acetic acid was 1: 6, and after stirring at room temperature for 60 minutes, nitric acid (HNO 3 ) was added to prevent precipitation of zirconium oxide.
(50 mTorr) in a state where the aluminum foil having the etch-pores formed therein was placed in the chamber, and the air inside the etching-pores was discharged for about 30 minutes, and then the zirconia sol solution prepared as described above was supplied to the chamber Respectively.
The aluminum foil was immersed in the zirconia sol solution for 15 minutes, and then the pressure of 3 atm was applied with argon gas for 10 minutes, and the residual zirconia sol solution was regulated to fall to 0.5 mm / s. Subsequently, after the chamber was opened, the aluminum foil having the coating film formed thereon was dried at 100 DEG C for 1 hour. The immersion, pressurization and drying processes were performed four times.
The aluminum foil was anodized with an anodic oxidizing solution of pH 3.2 prepared by mixing 100 g of boric acid (H 3 BO 3 ) with 1 L of distilled water by performing a sintering process at 500 ° C. for 30 minutes to carry out the present invention Sample 1 according to Example 1 was prepared. At this time, in the anodic oxidation, an anodic oxidation treatment was performed up to 100 V by applying a constant current of 50 mA / cm 2 .
Comparative Example 1: Preparation of Comparative Sample 1
The aluminum foil on which the etching pores were formed was immersed in the metal oxide sol solution in Example 1, dried and anodized to prepare Comparative Sample 1 according to the comparative example.
Experiment and Evaluation 1: Check coating uniformity
For each of Sample 1 and Comparative Sample 1, the surface layer was polished and photographed by an electron microscope. The results are shown in Fig.
3 is an electron micrograph of Sample 1 and Comparative Sample 1 according to the present invention.
In FIG. 3, (a) and (c) are electron micrographs of Comparative Sample 1, and (b) and (d) are electron micrographs of Sample 1. At this time, the scale of (a) and (b) is 1 占 퐉, and the scale of (c) and (d) is 100 nm.
Referring to FIG. 3, it can be seen that, in the case of the comparative sample 1 prepared simply by dip coating, the zirconia layer is formed unevenly on the inner wall surface of the etch-pores. (a), etch-pores in which a zirconia layer is not formed are also confirmed, and referring to (c), it can be confirmed that the thickness is uneven.
On the other hand, when the vacuum chamber is subjected to a pressurizing process, it can be seen that a zirconia layer is formed on the inner wall surface of almost all of the etch-pores as shown in (b). Further, referring to (d), it can be seen that the zirconia layer is formed on the inner wall surface of the etch-pore with a uniform thickness.
Examples 2 and 3: Preparation of Samples 2 and 3
The cycle including the immersion process, the pressurization process, the recovery process, and the drying process is substantially the same as the process for producing Sample 1, and the cycle is once performed, and then sintered and anodized to prepare Sample 2 according to Embodiment 2 of the present invention Respectively.
Also, Sample 3 according to Example 3 of the present invention was produced by substantially the same process as that of Sample 1, which was performed twice and then sintered and anodized.
Comparative Example 2: Preparation of Comparative Sample 2
The aluminum foil on which the etching-pores were formed was anodized at 100 V as a comparative sample 2.
Experiment and evaluation 2: Measurement of capacitance
The capacitance of each of the samples 1 to 3 and the comparative sample 2 according to the present invention was measured, and the results are shown in FIG. 4, "0L" is for comparison sample 2, and "4L "," 1L ", and "2L" are for samples 1, 2 and 3, respectively.
4 is a graph showing capacitance measurement results of Samples 1 to 3 and Comparative Sample 2 according to the present invention.
Referring to FIG. 4, it can be seen that the more the zirconia layer becomes thicker as the sample 2 (1L), the sample 3 (2L), and the sample 1 (4L), as compared with the comparative sample 2 (0L), the more the cost increases. In particular, in the case of Sample 1 (4L), it was confirmed that the capacity increase was about 42% at a frequency of 1 kHz as compared with Comparative Sample 2 (0L). This is because the use of about 40% of aluminum foil can be reduced when a capacitor of the same capacity is manufactured, which is a result that the capacitor product can be miniaturized.
Experiment and evaluation 3: Measurement of withstand voltage
The withstand voltage of each of the samples 1 to 3 and the comparative sample 2 according to the present invention was measured, and the results are shown in Fig. 5, "0L" is for comparison sample 2, and "4L "," 1L ", and "2L" are for samples 1, 2 and 3, respectively.
5 is a graph showing the withstand voltage measurement results of Samples 1 to 3 and Comparative Sample 2 according to the present invention.
Referring to FIG. 5, it can be seen that a withstand voltage of 100 V or more is exhibited in all the samples anodized at 100 V, that is, in all of the samples 1 to 3 and the comparative sample 2. That is, it can be seen that there is no problem in applying to all capacitors regardless of zirconia.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.
200: manufacturing apparatus 210: chamber
212: metal oxide sol 214: support
220: coating material supply unit 230: gas supply unit
240: Pump 250: Pressure gauge
Claims (14)
Disposing an aluminum foil having a plurality of etch-pores on its surface with a diameter of 1 to 2 占 퐉 and a depth of 10 to 50 占 퐉 in a chamber in a non-vacuum state;
Lowering the internal pressure of the chamber in which the aluminum foil is disposed to a vacuum of 759 Torr to 1 milliTorr;
Impregnating the aluminum foil with the metal oxide sol by providing a metal oxide sol into the chamber in a vacuum state;
A pressurizing step of supplying an inert gas into the chamber while the aluminum foil is impregnated in the metal oxide sol to raise the pressure inside the chamber to 1 atm to 5 atm;
A discharging step of discharging the metal oxide sol from the chamber to form a coating film of the metal oxide sol on the inner wall surface of the etching pores;
A drying step of drying the coating film of the metal oxide sol;
A sintering step of sintering the coating film of the dried metal oxide sol; And
And anodic oxidation of the aluminum foil to form a composite oxide layer comprising an aluminum oxide layer and a metal oxide layer stacked on a wall surface of the etch-
And the pores corresponding to the etch-pores are formed on the surface of the electrode structure on which the complex oxide layer is formed.
A method for manufacturing an electrode structure for an electrolytic capacitor.
Characterized in that the cycle including the impregnation step, the pressurization step, the discharge step and the drying step is repeatedly carried out before carrying out the sintering step or before anodizing the sintered aluminum foil,
A method for manufacturing an electrode structure for an electrolytic capacitor.
Characterized in that the metal oxide sol of the coating material supply portion is supplied to the chamber by a pressure difference between a coating material supply portion for accommodating the metal oxide sol and a vacuum chamber.
A method for manufacturing an electrode structure for an electrolytic capacitor.
The draining step
Wherein the rate of discharge of the metal oxide sol is adjusted to 0.2 mm / s to 10 mm / s based on the height of the metal oxide sol accommodated in the chamber.
A method for manufacturing an electrode structure for an electrolytic capacitor.
Characterized in that the sintering step is carried out at 350 ° C to 600 ° C.
A method for manufacturing an electrode structure for an electrolytic capacitor.
Wherein the anodic oxidation is carried out by applying a current of 20 mA / cm 2 to 50 mA / cm 2 up to a voltage of 100 V to 1000 V,
A method for manufacturing an electrode structure for an electrolytic capacitor.
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PCT/KR2015/005087 WO2016137057A1 (en) | 2015-02-26 | 2015-05-21 | Method for preparing aluminum foil for electrolytic capacitor, aluminum foil having high dielectric constant, electrolytic capacitor comprising same, and apparatus for preparing aluminum foil |
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CN110379633B (en) * | 2019-07-10 | 2021-10-08 | 益阳艾华富贤电子有限公司 | Impregnation method of solid electrolytic capacitor |
CN113718310A (en) * | 2021-08-09 | 2021-11-30 | 中南大学 | Preparation method of high-dielectric-constant composite anodic oxide film |
CN114843108B (en) * | 2022-05-18 | 2023-11-14 | 武汉理工大学 | Electrode foil and preparation method and application thereof |
CN115172061B (en) * | 2022-08-02 | 2024-01-30 | 南通海星电子股份有限公司 | Preparation method of high-dielectric composite powder sintered foil |
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