KR101721902B1 - Manufacturing method for substrate with nano structure improving light extracting efficiency - Google Patents

Manufacturing method for substrate with nano structure improving light extracting efficiency Download PDF

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KR101721902B1
KR101721902B1 KR1020150090897A KR20150090897A KR101721902B1 KR 101721902 B1 KR101721902 B1 KR 101721902B1 KR 1020150090897 A KR1020150090897 A KR 1020150090897A KR 20150090897 A KR20150090897 A KR 20150090897A KR 101721902 B1 KR101721902 B1 KR 101721902B1
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glass substrate
nano
substrate
layer
sin
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KR1020150090897A
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KR20170001218A (en
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황용운
강동호
백철흠
주재형
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노바테크인더스트리 주식회사
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    • H01L51/56—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H01L21/3142—Deposition using atomic layer deposition techniques [ALD] of nano-laminates, e.g. alternating layers of Al203-Hf02
    • H01L51/0096—
    • H01L51/5262—

Abstract

It is an object of the present invention to provide a method of manufacturing a transparent substrate for light extraction that improves the light extraction efficiency of a transparent substrate for light extraction,
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a patterned nano-pattern layer by spraying a polar solution containing ZnO on a glass substrate with an electrostatic spray; and etching the glass substrate by a dry etching method using the nano- And the nano pattern layer serving as a mask is etched with a solution which is not etched to remove the mask to form a nano irregular structure, and a SiN x layer is formed thereon by PECVD and polished to form a flat layer Thereby providing a nanostructured substrate having improved light extraction efficiency.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a nanostructure substrate having improved light extraction efficiency,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate manufacturing method applied to an OLED illumination or an OLED display, and more particularly, to a method of manufacturing a light extraction substrate in which a nanostructure is formed on a substrate to improve light extraction efficiency.

A light emitting device such as an OLED is a self-emitting device that emits light when a voltage is applied, and is being spotlighted as a display pixel formation or a white OLED illumination. The OLED structure is composed of a cathode / electron transport layer / active layer / hole transport layer / anode / transparent substrate, and light generated from the active layer, which is a light emitting layer, has a very low ratio of 20% through which a transparent glass substrate having a refractive index of 1.5 is penetrated. Therefore, the remaining 80% of the light can not be extracted from the transparent substrate and stay inside the device, ultimately converting into heat energy inside the device, damaging the device, shortening the device life. The fact that the light extraction efficiency is low means a problem of lowering the light intensity as an illumination or a pixel. However, since this causes deterioration of the device, various attempts have been made to increase the light extraction efficiency.

 Korean Patent No. 10-1177064 attempts to attach metal nanoparticles to a glass substrate in order to increase the light extraction efficiency of an OLED element. In addition, microlens may be formed or adhered to a glass substrate, (See Fig. 1).

Attaching a microlens array (MLA) sheet to the outside of the glass substrate is one of the ways to increase the light extraction efficiency separately from the inner nanostructure, and therefore, two methods can be used at the same time for higher efficiency.

In general, in the absence of a nanostructure, only about 20% of the emitted light comes out of the glass substrate. However, if the nanostructure is formed, assuming that 40% of the emitted light comes out of the nanostructure, the brightness is doubled with respect to the 20% .

US Patent Application No. US2012 / 0305966 A1 discloses a method of forming a nanostructure on a glass substrate by forming a quartz (SiO 2 ) layer on the glass substrate and uniformly depositing silver (Ag) on the glass substrate, And the silver particles are irregularly aggregated when annealed at about 400 ° C. The agglomerated particles or gaps are somewhat adjustable depending on the thickness of the Ag deposition layer or the annealing method. Here, the Ag cluster particles act as a mask. Next, after the quartz layer between the Ag particles is etched by dry etching and Ag is removed by wet etching, the light extraction substrate having a nanostructure is obtained (see FIG. 2).

The method of forming the above-described nanostructures improves the light extraction efficiency, but is not acceptable as a productive method suited to the substrate size that is actually maximized. That is, the fabrication of the light extracting substrate as described above requires a large heating furnace according to the enlargement of the substrate, as well as the silver coating system on the substrate. Therefore, . Silver coating system and large-scale heating furnace have a large equipment cost and high maintenance cost, and it is difficult to uniformly heat a large-sized substrate, and silver (Ag) nanoparticles are very expensive and need to be regenerated and used.

On the other hand, after the flat layer for planarizing the concave-convex structure is formed on the surface of the transparent substrate having the nano-irregular structure, the OLED light emitting layer is raised on the flat surface (see FIG. If a light emitting layer and a transparent electrode are formed on a non-planarized surface, an operation error may occur. Therefore, formation of a flat layer is an important process in terms of device reliability.

The planarization of the flat surface should not cause irregularities of 2 nm or more at an area of 1 μm × 1 μm. However, a smooth hill surface is not a problem. The formation of such a flat layer has become a practical problem. It is necessary to cover the concavo-convex structure flatly in a state in which the nano irregularities are formed on the entire surface of the large area in conjunction with the tendency of the substrate to be large, and to meet the high productivity and low production cost.

Conventional planarization work is based on a spin coating and a slot coating system for a light extracting substrate having nano irregularities. This planarization process may then result in outgassing during the light emitting layer / electrode formation, which may compromise the quality of the OLED illumination or the display as a whole.

Accordingly, it is an object of the present invention to provide a method of manufacturing a transparent substrate for light extraction, which improves the light extraction efficiency of a transparent substrate for light extraction, And a method for forming a flat layer covering the substrate so that there is no problem of outgassing.

According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an irregular nanopatterned layer by spraying a polar solution containing ZnO on a glass substrate with an electrostatic spray; and etching the glass substrate using a RIE dry etcher ), And then a nano irregular structure having improved light extraction efficiency was manufactured by removing a nanopattern layer serving as a mask using a wet stripper. At this time, the solution used in the stripping apparatus should react with the mask but not with the substrate.

In addition, the present invention can solve the out-gassing problem by depositing the SiN x layer by a vacuum process by PECVD in order to form a flat layer on the nano-irregular structure, A flat layer having high uniformity over a short process time was formed.

Furthermore, in order to make a uniform flat layer in which irregularities are not generated in the SiN x layer of 1 nm or more, the SiN x layer is deposited and then subjected to a polishing process.

According to the present invention, since the nanoparticles mixed in the polar solvent are sprayed by using the electro spray method, the mixed liquid becomes charged and becomes electrostatic repulsive force while being sprayed, and the nanoparticles The bundles themselves also repel each other, forming a uniform nanostructure of very small size. According to the present invention, there is no need for a large-scale annealing furnace, which has been used in the prior art, and the entire process can be performed in the atmosphere instead of the conventional vacuum process, It is possible to form randomly desired nanostructures on the whole in a random but uniform manner. The present invention can produce the same product at a significantly lower production cost than the process of making a light extraction substrate having a conventional nano structure.

In addition, a flat layer is formed on the nano-irregular structure formed as described above by the deposition of the SiN x layer to prevent the outgassing problem in the light emitting layer / electrode forming process, and the polishing process after the deposition of the SiN x layer, .

1 is a schematic cross-sectional view illustrating a state in which a nanostructure is formed on a transparent substrate in order to improve light extraction efficiency of a transparent substrate for light extraction.
2 is a schematic cross-sectional view illustrating a method of forming a nanostructure on a transparent substrate in order to improve light extraction efficiency of a conventional transparent substrate for light extraction.
3 is a sectional view showing a flat layer formed on the nano irregular structure.
4 is a schematic diagram illustrating the formation of a nanopatterned mask using electrostatic spraying in accordance with a preferred embodiment of the present invention.
5 is a schematic view illustrating a process of forming a nanostructure using the nanostructured mask formed through the electrostatic spraying of FIG.
6 is a schematic cross-sectional view showing a state in which SiN x is deposited as a flat layer formed on the nano irregular structure.
Figure 7 is a schematic view of a polishing machine.
8 is a SEM photograph of a glass substrate showing a nano-irregular structure formed by an electric atomizer.
9 is a SEM photograph of SiN x deposited on a nano-irregular structure.
10 is a SEM photograph of a SiN x deposited and then a CMP process.
11 is AFM photographs obtained by depositing SiN x and then performing a CMP process.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, a transparent substrate 100 is prepared. It is preferable that the transparent substrate 100 is thinned as glass or tempered glass. Glass substrate slurried with an etching solution or glass substrate tempered after a slimming process is flexible and can be applied to a curved surface display or a curved surface illumination.

ZnO powder is prepared, and the particles are of nano size. WO 3 may be used, but ZnO that can improve durability as a mask is more preferable. The particles may be from 1 nm to 1000 nm. The nano-sized metal oxide powder is mixed with a polar solvent such as water, alcohol or acetone to prepare a mixed solution. The mixed solution is present in a solution or a colloidal solution state. An adhesive material (silicate, PVP or the like) capable of imparting viscosity may be mixed with the adhesive. In this embodiment, the nano powder solution is prepared at a concentration of about 15% by weight, but it may vary depending on the condition of the structure.

The particle size injected by the electrostatic spray is usually from several to several hundred nanometers, and is attached and fixed to the substrate 100 by the viscosity.

The substrate 100, which is a non-conductor, is placed on the conductor substrate holder 200 for spraying the polar solution produced by the electrostatic spray onto the substrate 100.

The mixed liquid is put into a conductor hopper, and the large-area transparent substrate 100 is placed with a proper interval (for example, 50 mm to 500 mm) below the conductor hopper. In the case of a large area, several conductor hopper injection nozzles can be arranged as shown in FIG. 2 in order to increase the production speed.

A small nozzle having a diameter of several millimeters is formed at the lower end of the hopper. The positive electrode of the power supply device is connected to the conductor hopper, and the negative (-) electrode is connected to the substrate holder 200. A high voltage of several kV to several tens kV (may be 1 to 50 kV) is applied to both ends.

When a high voltage is applied, when the mixed liquid is injected from the nozzle of the hopper, (+) electric charge is charged in the mixed liquid to give repulsive force to each other, and thereby the mixed liquid is widely dispersed in the space as if it is sprayed strongly by the atomizer. The powder particles contained in the mixed solution are dispersed widely in the space without being clumped by the electrostatic repulsion between the particles in a state surrounded by the polar solvent. Therefore, it is preferable that ZnO The nanoparticles become irregularly distributed. Irregularly sized ZnO The nanoparticles are randomly distributed to form a random nano-sized mask pattern. ZnO Unlike solution containing WO 3 , the colloidal solution has the advantage that the mask can withstand a long time during dry etching, and the substrate can be etched deeply.

In this case, the polarities of the power supply units can be connected to each other in the reverse direction, and in such a case, the mixed liquid will be charged with (-) charge.

Here, the diameter size d of the particle bundle adhering to the mixed solution may be approximated to the following equation.

Figure 112015061938669-pat00001

Where Q is the flow rate of the liquid, ρ is the density of the liquid, ε 0 is the dielectric constant in vacuum, γ is the surface tension of the liquid, and K is the electrical conductivity of the liquid.

Hartman RPA, Brunner DJ, Camelot DMA, Marijnissen JCM, Scarlett B. J. Aerosol Sci. 31, p65 (2000)

When the transparent substrate 100 in such a state is dried, a nano-pattern mask is formed. The drying means may be various drying means such as natural drying, hot air drying, ultraviolet drying and the like. Drying with heat or light can secure the fixation of the nanopattern mask and shorten the fixation time.

The transparent substrate 100 on which the nano pattern mask is formed is dry-etched using a gas containing fluorine ions. As shown in FIG. 3, the dry etching-treated substrate 100 has irregular nanostructures (a kind of nano dimple).

Next, the nano-pattern mask itself is removed to obtain a glass substrate 100 for light extraction in which nano dimples are formed. The method of removing the nanopattern mask may be wet etching. The etching solution for removing the nano pattern mask may be various acid solutions such as nitric acid, hydrochloric acid and the like. The wet etching may be a spray method, a down flow method or a dip method. After wet etching, it can be rinsed with pure water and dried.

The light extraction glass substrate on which the nanostructure is formed extracts light generated from the inside and can escape from the substrate, thereby improving luminance and device lifetime. Namely, nano dimples are randomly distributed, and the cross-sectional structure thereof is like a microlens array, thereby enhancing light extraction efficiency.

Next, a method of forming a flat layer on the nano irregular structure formed above will be described.

When the flat layer is covered with the nano irregular structure and thereafter the light emitting layer and the electrode forming process are performed, there should be no outgassing problem. Therefore, it is necessary to fabricate a flat layer having thermal stability in a process using a thermal evaporation source. For this purpose, the planarizing layer is formed of SiN x and the forming method is PECVD. Since the processes after the flat layer are all vacuum processes and thermal evaporation sources are used, PECVD can be an efficient process rather than the non-vacuum process and the heat treatment process of the flat layer itself.

A vacuum chamber was prepared, a substrate having a nano-irregular structure was placed in a chamber, and the chamber was evacuated. Then, SiH 4 , NH 3 , N 2 is supplied to maintain the operating pressure at about 1.5 torr, and a voltage is applied to discharge the plasma. A heater is provided in the chamber and the SiN x is deposited on the nano-irregular structure by keeping the process temperature at about 250 to 350 ° C, preferably about 250 to 300 ° C. At this time, SiH 4 : The composition ratio of NH 3 can be controlled to control the refractive index, and the refractive index is also affected by the temperature when depositing SiN x , so that the above process temperature range is maintained. In this embodiment, the refractive index is about 1.8 to 1.9.

SiN x deposited on the nano-irregular structure is not very flat as shown in Fig. The flatness or the uniformity is preferably affected by the distance between the showerhead of the PECVD factory apparatus and the substrate chuck for holding the substrate so that the interval is 37 to 40 mm. However, it is more preferable to carry out an additional polishing process to form a flat layer having unevenness of 1 nm or less.

The structure of the polishing apparatus is shown in FIG. 7, and in this embodiment, polishing was performed by a CMP (Chemical Mechanical Polishing) process. Accordingly, it is preferable that SiN x is formed with a sufficient thickness. In this embodiment, the substrate is polished to a thickness of 1 to 2 탆 so as not to damage the nanostructure while ensuring sufficient flatness. 1/3 to 1/2 of the SiN x thickness can be removed by polishing.

8 is a SEM photograph of a glass substrate showing a nano-irregular structure formed by an electric atomizer. Nano irregularities showing randomness and uniformity are confirmed. SEM photographs of SiN x deposited thereon are shown in FIG. It can be seen that a considerable curvature is maintained. The CMP process was performed, and then a SEM measurement photograph was recorded in FIG. 10 together with the cross-sectional observation photograph. A very flattened state can be identified. The superiority of this flatness is also confirmed from AFM results measured after polishing (see FIG. 11).

Thus, a nano irregular structure can be easily formed at a low equipment cost, SiN x is deposited thereon by PECVD, and a light extraction substrate having a flat layer formed by CMP is manufactured. The flat layer manufacturing method of the present embodiment is excellent in mass productivity since a high flatness uniformity can be formed over a large area.

It is to be understood that the invention is not limited to the disclosed embodiment, but is capable of many modifications and variations within the scope of the appended claims. It is self-evident.

100: substrate
200: substrate holder

Claims (5)

ZnO powder was mixed with a polar solvent to prepare a mixed solution,
A glass substrate is prepared and the mixed liquid is sprayed on the glass substrate by electrostatic spray to form an irregularly distributed nano pattern, the nano pattern is dried, and the nano-patterned glass substrate is dry-etched by etching solution containing hydrofluoric acid, The pattern acts as a mask to etch a portion of the glass substrate without a mask having a nano pattern so that an irregular pattern of the nano structure is formed on the glass substrate,
Mixture injection of an electrostatic spray onto a glass substrate is carried out in the air without the need for a vacuum chamber,
(+) Electrode of the power source is connected to a nozzle mounted on the hopper of the electrostatic sprayer, and a negative (-) electrode is connected to the substrate holder to apply a voltage to charge the mixed solution injected from the nozzle of the hopper with (+) charge (-) electrode of the power source is connected to a nozzle mounted on the hopper, and a positive electrode is connected to a substrate holder, and a voltage is applied to charge a mixed solution injected from the nozzle of the hopper by negative charge The powder particles are dispersed in the space without aggregation by electrostatic repulsion in a state surrounded by a polar solvent, and adhere onto the glass substrate to form a nano pattern,
The SiN x layer is formed on the nano pattern by PECVD to a thickness of 1 to 2 탆, and the formed SiN x layer is polished to remove 1/3 to 1/2 of the deposited thickness by polishing to form a flat layer having irregularities of 1 nm or less Wherein the glass substrate is a glass substrate.
delete The method according to claim 1, wherein the mixed liquid further comprises an adhesive material capable of imparting viscosity, which comprises at least one of water, alcohol, and acetone. delete The method of claim 1, wherein the deposition temperature of the SiN x layer is 250 to 350 ° C.





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KR101114352B1 (en) 2010-10-07 2012-02-13 주식회사 엘지화학 Substrate for organic electronic devices and method for manufacturing thereof

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KR101481939B1 (en) * 2013-04-22 2015-01-15 엔라이팅 주식회사 Method for manufacturing light extraction nanopatterning plate by transparent powder
KR20150011908A (en) * 2013-07-24 2015-02-03 엔라이팅 주식회사 High efficient light extracting substrate and display panel and manufacturing methods thereof

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