JP2014154276A - Field electron emission element and method for manufacturing light emitting element using the same - Google Patents
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Abstract
Description
本発明は、強電界によって電子を放出する電界電子放出膜を有する電界電子放出素子（電界電子放出電極）およびそれを用いた発光素子の製造方法に関する。より詳しくは、表示装置、非発光ディスプレイ用バックライト光源、あるいは照明ランプ等に利用される電界電子放出素子とそれを面電子源として用いた面発光素子の製造方法に関する。 The present invention relates to a field electron emission device (field electron emission electrode) having a field electron emission film that emits electrons by a strong electric field, and a method of manufacturing a light emitting device using the same. More specifically, the present invention relates to a field electron emission device used for a display device, a backlight light source for a non-light emitting display, or an illumination lamp, and a method for manufacturing a surface light emitting device using the same as a surface electron source.
次世代の高輝度フラットパネルディスプレイとして、フィールドエミッンョンディスプレイ（ＦＥＤ）の研究開発が進められている。また、一般照明としての発光素子は、白熱灯や蛍光灯が長年にわたり用いられてきており、蛍光灯は白熱灯と比べると同じ明るさでも消費電力を低く抑えられるという特徴を有しており、照明として広く利用されている。近年、白色灯や蛍光灯などの既存の照明に代わり、発光ダイオード（ＬＥＤ）を光源とした表示装置や照明が開発され、普及している。最近では、信号機などの表示装置、ＬＣＤ用のバックライト、各種照明などに利用されている。
ＬＥＤは、半導体のキャリアの再結合により発光する原理であるため、材料のバンド構造で決められた固有の波長の単色光であり、かつ点光源であるため、特にバックライトや照明などの大面積に均一に、そして白色などのブロードな波長で利用するアプリケーションには不適である。特に、白色表示にする場合には、紫外線発光素子としてＬＥＤを用い、その紫外線で蛍光体を発光させる構成が必要となっている。
Research and development of a field emission display (FED) is underway as a next-generation high-brightness flat panel display. In addition, incandescent lamps and fluorescent lamps have been used for many years as light-emitting elements as general lighting, and fluorescent lamps have the feature that power consumption can be kept low even at the same brightness as incandescent lamps. Widely used as lighting. In recent years, in place of existing illumination such as white light and fluorescent light, display devices and illumination using light emitting diodes (LEDs) as light sources have been developed and spread. Recently, it is used for display devices such as traffic lights, backlights for LCDs, and various illuminations.
Since LED is a principle that emits light by recombination of semiconductor carriers, it is a monochromatic light with a specific wavelength determined by the band structure of the material and is a point light source. It is unsuitable for applications that are used uniformly and at broad wavelengths such as white. In particular, in the case of white display, it is necessary to use an LED as an ultraviolet light emitting element and emit a phosphor with the ultraviolet light.
これに対し、ＦＥＤと同様の方式で、面電子放出源から放出される電子で蛍光体を発光させることで、薄型かつ高輝度の面発光素子が容易に得られると考えられる。
電界放射型の電子放出源（フィールドエミッタ）は、物質に印加する電界の強度を上げると、その強度に応じて物質表面のエネルギー障壁の幅が次第に狭まり、電界強度が１０7Ｖ／ｃｍ以上の強電界となると、物質中の電子がトンネル効果によりそのエネルギー障壁を突破できるようになる。そのため物質から電子が放出されるという現象を利用している。この場合、電場がポアッソンの方程式に従うために、電子を放出する部材（エミッタ）に電界が集中する部分を形成すると、比較的低い引き出し電圧で効率的に冷電子の放出を行うことができる。
近年、エミッタ材料としてカーボンナノチューブ（以下ＣＮＴと表記する。）が注目されている。ＣＮＴは、炭素原子が規則的に配列したグラフェンシートを丸めた中空の円筒であり、その外径はナノメータオーダで、長さは通常０.５μｍ〜数１０μｍの非常にアスペクト比の高い物質である。その形状から、電界が集中しやすく高い電子放出能が期待できる。また、ＣＮＴは、化学的、物理的安定性が高いという特徴を有するため、動作真空中の残留ガスの吸着やイオン衝撃等に対して影響を受け難いことが期待できる。
On the other hand, it is considered that a thin and high-luminance surface light emitting device can be easily obtained by causing the phosphor to emit light with electrons emitted from the surface electron emission source in the same manner as the FED.
In the field emission type electron emission source (field emitter), when the strength of the electric field applied to the material is increased, the width of the energy barrier on the surface of the material is gradually reduced according to the strength, and the electric field strength is 10 7 V / cm or more. When a strong electric field is applied, electrons in the material can break through the energy barrier by the tunnel effect. Therefore, the phenomenon that electrons are emitted from a substance is used. In this case, since the electric field follows Poisson's equation, if a portion where the electric field concentrates is formed on the member (emitter) that emits electrons, cold electrons can be efficiently emitted with a relatively low extraction voltage.
In recent years, carbon nanotubes (hereinafter referred to as CNT) have attracted attention as emitter materials. CNTs are hollow cylinders made by rolling graphene sheets with regularly arranged carbon atoms, the outer diameter of which is on the order of nanometers, and the length is usually 0.5 μm to several tens of μm. . Because of its shape, it is easy to concentrate the electric field and high electron emission ability can be expected. In addition, since CNT has a feature of high chemical and physical stability, it can be expected that the CNT is not easily affected by adsorption of residual gas or ion bombardment in an operating vacuum.
ＣＮＴを使用した電子放出源の製造方法として、ＣＮＴを含む分散液を基板に塗布し、乾燥・焼成する方法は、生産性および製造コストの点で優れていると考えられ、種々検討されている。
ＣＮＴは非常に細かい繊維状の微粒子（粉末）であるため、ＣＮＴを用いて電子放出源を形成する場合は、ＣＮＴを基板に固着する必要がある。一般に、ＣＮＴの固着には、樹脂などのバインダ材料が用いられる。具体的には、バインダ材料とＣＮＴを溶媒に混合分散してペースト状（またはインク状）とし、これを印刷法、スプレー法、ダイコーター法等の手法で基板の表面に塗布し、乾燥・焼成することにより、バインダ材料の接着性を利用して基板上にＣＮＴを固着する。このような方法でＣＮＴを基板上に固着した場合、ＣＮＴ自体はバインダ材料の中に埋め込まれたかたちとなるため、高い電子放出特性を実現するために、ＣＮＴを露出させ、かつＣＮＴを基板に対して垂直に配向させる方法が用いられてきた。例えば、特許文献１には、ＣＮＴを含む層の表面に多孔質で粘着性を有するシート部材を貼り付けて乾燥した後、そのシート部材を剥離することにより、ＣＮＴを部分的に露出させ、かつＣＮＴを垂直に配向させる技術が開示されている。また、特許文献２には、ＣＮＴを含む層をドライエッチングする技術が開示されている。また、特許文献３には、ＣＮＴを含む層に対して対向電極を設け、逆バイアスを印加することによりＣＮＴを露出させる技術が開示されている。さらに、膜の内部に存在するＣＮＴの露出方法としては、特許文献４に、ＣＮＴ、オリゴマー、架橋性モノマー、重合開始材および溶剤を含む組成物を基板上に塗布して形成した膜に対して熱処理を行い、熱応力により膜に亀裂を生じさせ、その亀裂部内にＣＮＴを露出させ、電子放出源とする方法が提案されている。
As a method for producing an electron emission source using CNTs, a method of applying a dispersion containing CNTs to a substrate, and drying and firing is considered to be excellent in terms of productivity and production cost, and various studies have been made. .
Since CNT are very fine fibrous fine particles (powder), when forming an electron emission source using CNT, it is necessary to fix CNT to a board | substrate. Generally, a binder material such as a resin is used for fixing the CNTs. Specifically, the binder material and CNT are mixed and dispersed in a solvent to form a paste (or ink), which is applied to the surface of the substrate by a printing method, spray method, die coater method, etc., and then dried and fired. By doing so, the CNTs are fixed on the substrate using the adhesiveness of the binder material. When the CNTs are fixed on the substrate by such a method, the CNTs themselves are embedded in the binder material. Therefore, in order to realize high electron emission characteristics, the CNTs are exposed and the CNTs are attached to the substrate. On the other hand, a method of aligning vertically has been used. For example, in Patent Document 1, after a porous and adhesive sheet member is attached to the surface of a layer containing CNTs and dried, the sheet member is peeled off to partially expose the CNTs, and A technique for vertically aligning CNTs is disclosed. Patent Document 2 discloses a technique for dry etching a layer containing CNTs. Patent Document 3 discloses a technique in which a counter electrode is provided on a layer containing CNT and a CNT is exposed by applying a reverse bias. Furthermore, as a method for exposing CNT existing in the film, Patent Document 4 discloses that a film formed by applying a composition containing CNT, oligomer, crosslinkable monomer, polymerization initiator and solvent on a substrate. A method has been proposed in which heat treatment is performed, a film is cracked by thermal stress, CNT is exposed in the crack, and an electron emission source is formed.
電界電子放出素子（電界電子放出電極）を用いた発光素子に求められる特性としては、高輝度が得られる、輝度の発光面内均一性が高い、小電力で発光が可能、発光状態にちらつきが少ない、等が挙げられる。しかし、特許文献１ないし３の技術を用いて、電界電子放出素子（電界電子放出電極）を用いた発光素子を作成した場合、発光面内での発光輝度の均一性を高くすることが難しいという問題があった。特許文献１に記載の方法では、粘着性のシート状部材とＣＮＴとの密着性をコントロールすることが困難であり、剥離の際にＣＮＴが不均一に露出するという問題があった。特許文献２に記載の方法では、ＣＮＴを露出させるためにドライエッチングを行うが、エッチングの際にＣＮＴが劣化するという問題があった。また、特許文献１ないし３に記載の方法は、基板と水平方向に配向しているＣＮＴについては露出させる効果が少ないので、ＣＮＴを起毛する工程が必要であった。さらに、これらの方法では、膜の形成のために有機質のバインダと有機溶媒とを使用するため、導電性の高い膜を得ることが困難であった。
また、特許文献４に記載の技術では、膜の主成分を樹脂とする必要があり、膜の導電性を高くすることが困難であることや、ＣＮＴを露出させる亀裂の密度や分布の制御が容易ではなく、輝度の面内均一性が高く小電力で発光が可能というと結果を得ることが困難であるという問題があった。
The characteristics required of a light emitting device using a field electron emission device (field electron emission electrode) include high brightness, high uniformity of light emission within the surface, light emission with low power, and flickering in the light emission state. There are few. However, when a light-emitting device using a field electron-emitting device (field electron-emitting electrode) is created using the techniques of Patent Documents 1 to 3, it is difficult to increase the uniformity of light emission luminance within the light-emitting surface. There was a problem. In the method described in Patent Document 1, it is difficult to control the adhesiveness between the adhesive sheet-like member and the CNTs, and there is a problem that the CNTs are exposed unevenly during peeling. In the method described in Patent Document 2, dry etching is performed to expose the CNTs, but there is a problem that the CNTs deteriorate during the etching. In addition, since the methods described in Patent Documents 1 to 3 have little effect of exposing the CNTs that are oriented in the horizontal direction with respect to the substrate, a step of raising the CNTs is necessary. Furthermore, in these methods, since an organic binder and an organic solvent are used for forming the film, it has been difficult to obtain a highly conductive film.
In the technique described in Patent Document 4, it is necessary to use a resin as the main component of the film, and it is difficult to increase the conductivity of the film, and it is possible to control the density and distribution of cracks exposing CNTs. It is not easy, and there is a problem that it is difficult to obtain a result if the luminance is in-plane uniform and light can be emitted with low power.
本発明者らは、前述の課題を解決するために、錫ドープインジウム酸化物（以下ＩＴＯと表記する。）とＣＮＴとを含む膜の表面に溝が形成された構造を有する電界電子放出膜を開発し、先に特許出願をした（特願２０１２−２２５５５４）。この電界電子放出膜は、それを発光素子に用いた場合、小電力で作動が可能であり、かつ、輝度の発光面内均一性の高いものであったが、輝度や発光効率に更なる改善が求められていた。
本発明者らが鋭意検討を行った結果、ＩＴＯを主成分としＣＮＴを微量含む膜を形成し、その表面にエッチング処理を施した後、当該ＣＮＴを含むＩＴＯ膜表面に溝を形成することにより得た電界電子放出膜を有する電界電子放出素子を発光素子に用いた場合、その輝度を向上することができることを見出し、本発明を完成するに至った。
In order to solve the above-mentioned problems, the present inventors have developed a field electron emission film having a structure in which a groove is formed on the surface of a film containing tin-doped indium oxide (hereinafter referred to as ITO) and CNT. Developed and filed a patent application first (Japanese Patent Application No. 2012-225554). When this field electron emission film is used for a light emitting device, it can be operated with a small electric power and has high uniformity in luminance in the light emitting surface, but further improvement in luminance and luminous efficiency is achieved. Was demanded.
As a result of intensive studies by the present inventors, a film containing ITO as a main component and containing a small amount of CNT is formed, and after etching the surface, a groove is formed on the surface of the ITO film containing CNT. When the field electron emission device having the obtained field electron emission film is used for a light emitting device, it has been found that the luminance can be improved, and the present invention has been completed.
本発明は、発光素子に用いた場合、小電力で作動が可能であり、輝度の発光面内均一性が高く、かつ、輝度を向上させることのできる電界電子放出膜を有する電界電子放出素子およびそれを用いた発光素子の製造方法を提供することを目的とする。 The present invention, when used in a light-emitting device, has a field electron-emitting device having a field electron-emitting film that can be operated with low power, has high luminance uniformity in the light-emitting surface, and can improve luminance. It is an object of the present invention to provide a method for manufacturing a light emitting device using the same.
上記の目的を達成するために、本発明では、基板上に、錫ドープインジウム酸化物の前駆体とカーボンナノチューブとを含有するカーボンナノチューブ分散液を塗布し、加熱して、カーボンナノチューブを含む錫ドープインジウム酸化物膜を形成する工程、前記の酸化物膜に湿式のエッチング処理を施す工程、および、前記のエッチング処理後の酸化膜表面に溝を形成し、前記の溝の壁面においてカーボンナノチューブを露出させる工程、を含む、電界電子放出素子の製造方法が提供される。
上記の錫ドープインジウム酸化物の前駆体としては、例えば有機インジウム化合物、錫アルコキシドおよび錫ドープインジウム酸化物粉からなる群から選ばれた二種以上が適用できる。上記のカーボンナノチューブを含む錫ドープインジウム酸化物膜は、例えば６０〜９９.９質量％の錫ドープインジウム酸化物と０.１〜２０質量％のカーボンナノチューブとを含むものである。
上記の湿式のエッチング処理として、例えばシュウ酸水溶液中での電解エッチングが挙げられる。
上記の膜表面に溝を形成するに際しては、幅が０.１〜５０μｍの範囲にある溝の１ｍｍ2当たりの総延長が２ｍｍ以上となるように溝を形成することがより好ましい。
また本発明では、上記の製造方法により製造された電界電子放出素子と、アノード電極および蛍光体が設けられている構造体（アノード）とを対向させて配置し、電界電子放出素子とアノードの間の空間を１０-1Ｐａ以下に減圧する工程を有する、発光素子の製造方法が提供される。
In order to achieve the above object, in the present invention, a carbon nanotube dispersion containing a tin-doped indium oxide precursor and carbon nanotubes is applied onto a substrate, heated, and then tin-doped with carbon nanotubes. A step of forming an indium oxide film, a step of performing a wet etching process on the oxide film, and forming a groove on the surface of the oxide film after the etching process to expose carbon nanotubes on the wall surface of the groove A method for manufacturing a field electron emission device.
As a precursor of said tin dope indium oxide, 2 or more types chosen from the group which consists of an organic indium compound, a tin alkoxide, and tin dope indium oxide powder, for example is applicable. The tin-doped indium oxide film containing carbon nanotubes described above contains, for example, 60 to 99.9% by mass of tin-doped indium oxide and 0.1 to 20% by mass of carbon nanotubes.
As said wet etching process, the electrolytic etching in an oxalic acid aqueous solution is mentioned, for example.
When forming the groove on the film surface, it is more preferable to form the groove so that the total extension per 1 mm 2 of the groove having a width in the range of 0.1 to 50 μm is 2 mm or more.
In the present invention, the field electron-emitting device manufactured by the above-described manufacturing method and the structure (anode) provided with the anode electrode and the phosphor are disposed so as to face each other, and between the field electron-emitting device and the anode. There is provided a method for manufacturing a light-emitting element, which includes a step of reducing the pressure of the space to 10 −1 Pa or less.
以上、本発明においては、電界電子放出膜の主成分を導電性のＩＴＯとし、ＣＮＴを含むものとし、その膜にエッチング処理を施した後溝を形成し、膜内部のＣＮＴを露出することすることにより、小電力でも作動可能であり、輝度の発光面内均一性の高く、かつ、輝度を向上させた電界電子放出素子を得ることが出来る。また、その電界電子放出素子を用いた発光素子を得ることが出来る。 As described above, in the present invention, the main component of the field electron emission film is conductive ITO and contains CNT, and after etching the film, a groove is formed to expose the CNT inside the film. Thus, it is possible to obtain a field electron emission device which can be operated with a small electric power, has a high luminance uniformity within the light emitting surface, and has an improved luminance. In addition, a light emitting element using the field electron emission element can be obtained.
［電界電子放出素子］
本発明において、電界電子放出素子（電界電子放出電極）は、基板等の支持体上に、以下に述べる電界電子放出膜を形成することにより製造される。本発明において使用する基板は、その種類に制限はないが、基板が導電性であれば電気的接続方法の自由度が増大する点で有利であり好ましい。好適な基板の例として、シリコン基板等の半導体基板や金属基板等が挙げられる。
[Field electron emitter]
In the present invention, a field electron emission device (field electron emission electrode) is produced by forming a field electron emission film described below on a support such as a substrate. The type of the substrate used in the present invention is not limited. However, if the substrate is conductive, it is advantageous and preferable in that the degree of freedom of the electrical connection method is increased. Examples of suitable substrates include semiconductor substrates such as silicon substrates, metal substrates, and the like.
［電界電子放出膜］
本発明において、電界電子放出膜は、ＩＴＯの前駆物質であるインジウムを含む成分および錫を含む成分並びにＣＮＴを含む分散液（ＣＮＴ分散液）を基板に塗布し、加熱・焼成してＣＮＴ含有ＩＴＯ膜を形成した後、その膜の表面をエッチングし、引き続き、さらにその膜の表面に溝を形成することにより製造される。
すなわち、この電界電子放出膜は、ＩＴＯを主成分とし、ＣＮＴを微量含む膜を形成した後、その膜の表面をエッチングし、引き続き、さらにその膜の表面に溝を形成し、その溝の壁面にＣＮＴの端部を露出させた構造を有するものである。
[Field electron emission film]
In the present invention, the field electron emission film is formed by applying a component containing indium, which is a precursor of ITO, a component containing tin, and a dispersion containing CNT (CNT dispersion) to a substrate, and heating and firing the CNT-containing ITO. After the film is formed, it is manufactured by etching the surface of the film and subsequently forming grooves on the surface of the film.
That is, this field electron emission film is formed by forming a film containing ITO as a main component and containing a small amount of CNT, then etching the surface of the film, and subsequently forming a groove on the surface of the film. It has a structure in which the end of the CNT is exposed.
電界電子放出膜中のＩＴＯの含有量としては、６０質量％以上が好ましい。６０質量％未満では、膜の電導度が低くなり、電界電子放出素子とした時の発光強度の面内分布が不均一になる恐れがある。ＩＴＯは、電界電子放出膜中に最大９９.９質量％まで含有させることが可能であるが、ＣＮＴの含有量とのバランスから、８０〜９９.８質量％が好ましく、９０〜９９.８質量％がより好ましく、９５〜９９.５質量％がさらに好ましい。なお、ＩＴＯはインジウム酸化物中に錫酸化物が固溶したものであり、製造条件によりその組成が変化する。また、出発原料として有機金属を用い、焼成温度が低い場合には有機成分が一部残存する場合もあるが、本発明におけるＩＴＯの含有量とは、電界電子放出膜中に含まれるインジウムおよび錫が、それぞれ化学量論組成の酸化物であると仮定して算出した値である。
電界電子放出膜は、エミッタとしてＣＮＴを含有する。使用するＣＮＴの種類は特に限定されないが、単層（シングルウォール）ＣＮＴを用いることが好ましい。単層（シングルウォール）ＣＮＴを用いると、電子放出電界および電子放出駆動電圧の低減の点で有利である。電界電子放出膜中のＣＮＴ含有量は、０.１〜２０質量％の範囲が好ましい。０.１質量％未満の場合には、電子の放出が不十分となるおそれがあり、２０質量％を超えると、高価なＣＮＴを多量に必要とし、膜の製造コストが高くなるので、不経済である。上記のバランスを考慮すると、電界電子放出膜中のＣＮＴ含有量は、０.２〜１０質量％がさらに好ましく、０.５〜５質量％が一層好ましい。
電界電子放出膜の厚さは、０.５〜１００μｍとすることが好ましい。０.５μm未満の場合には、溝の形成手段の選択に制約を受けるので、好ましくない。また、１００μｍを超えると、材料コストが嵩むので好ましくない。
The content of ITO in the field electron emission film is preferably 60% by mass or more. If it is less than 60% by mass, the conductivity of the film is lowered, and the in-plane distribution of the emission intensity when the field electron-emitting device is obtained may be non-uniform. ITO can be contained up to 99.9% by mass in the field electron emission film, but 80 to 99.8% by mass is preferable from the balance with the CNT content, and 90 to 99.8% by mass. % Is more preferable, and 95 to 99.5% by mass is more preferable. ITO is a solid solution of tin oxide in indium oxide, and its composition changes depending on the manufacturing conditions. In addition, when an organic metal is used as a starting material and the firing temperature is low, a part of the organic component may remain. The content of ITO in the present invention refers to indium and tin contained in the field electron emission film. Are values calculated on the assumption that they are oxides of stoichiometric composition.
The field electron emission film contains CNT as an emitter. Although the kind of CNT to be used is not particularly limited, it is preferable to use single-wall (single wall) CNT. The use of single-layer (single wall) CNTs is advantageous in terms of reducing the electron emission electric field and the electron emission drive voltage. The CNT content in the field electron emission film is preferably in the range of 0.1 to 20% by mass. If the amount is less than 0.1% by mass, electron emission may be insufficient. If the amount exceeds 20% by mass, a large amount of expensive CNT is required, and the production cost of the film increases, which is uneconomical. It is. Considering the above balance, the CNT content in the field electron emission film is more preferably 0.2 to 10% by mass, and further preferably 0.5 to 5% by mass.
The thickness of the field electron emission film is preferably 0.5 to 100 μm. When the thickness is less than 0.5 μm, the selection of the groove forming means is restricted, which is not preferable. Moreover, when it exceeds 100 micrometers, since material cost increases, it is not preferable.
本発明に従う製造工程で得られる電界電子放出膜は、上述の様に、その表面に溝が形成された構造を有する。
一般に、ＣＮＴを液体に分散させたものを塗布・焼成して得られた膜中では、ＣＮＴは、必ずしも基板に垂直な状態では存在せず、基板に水平もしくは水平に近い状態で存在するものも多い。そのため、前述の焼成膜の表面を部分的に除去しても、ＣＮＴを効果的に露出することが困難な場合が多く、また、場合によっては起毛処理が必要となる。これに対して本発明の場合には、膜中に溝を設けるため、膜の内部において基板に水平もしくは水平に近い状態で存在するＣＮＴの端部を効果的に露出することが可能となり、かつ、起毛処理も不要となる。
電界電子放出膜表面に形成される溝の幅は、０.１〜５０μｍの範囲が好ましい。溝の幅が０.１μｍ未満では、ＣＮＴが部分的に露出しても、その端部が必ずしも露出しない恐れがあり、また、溝の形成手段の選択にも制約があるので好ましくない。溝の幅が５０μｍ超の場合には、膜に含まれるＣＮＴが不必要に除去され、発光素子を形成した場合、発光の面内均一性が低下するおそれがあり、好ましくない。溝の幅は、光学顕微鏡もしくは走査電子顕微鏡を用いて測定することが出来る。
電界電子放出膜表面に形成される溝の深さは、０.１μｍ以上であることが好ましい。溝の深さが０.１μｍ未満のみの場合には、ＣＮＴの露出量が不十分となる。溝の深さに特に上限はなく、電界電子放出膜の厚さと同程度、すなわち、基板に到達する溝が形成されていても構わない。
電界電子放出膜表面に存在する溝は、幅が０.１〜５０μｍの範囲である部分の１ｍｍ2当たりの総延長が２ｍｍ以上であることが好ましい。２ｍｍ未満では発光素子の発光強度が低下するとともに、発光強度の面内分布も悪化する。幅が０.１〜５０μｍの範囲の溝が総延長で２ｍｍ以上存在すれば、同一の領域に、溝の幅が０.１μｍ未満の部分や５０μｍ超えの部分が存在していても構わない。溝の長さは、光学顕微鏡もしくは走査電子顕微鏡を用いて測定することが出来る。幅が０.１〜５０μｍの範囲である溝の１ｍｍ2当たりの総延長は、１ｍｍ×１ｍｍの領域において、それぞれの溝について、幅が０.１〜５０μｍの範囲内である部分の長さを測定し、その長さの和を求めることにより得ることができる。
As described above, the field electron emission film obtained by the manufacturing process according to the present invention has a structure in which grooves are formed on the surface thereof.
In general, in a film obtained by applying and baking a dispersion of CNT in a liquid, CNT does not necessarily exist in a state perpendicular to the substrate, but may exist in a state that is horizontal or nearly horizontal to the substrate. Many. For this reason, it is often difficult to effectively expose the CNTs even if the surface of the fired film is partially removed, and in some cases, raising treatment is necessary. On the other hand, in the case of the present invention, since the groove is provided in the film, it becomes possible to effectively expose the end portion of the CNT existing in a state of being horizontal or nearly horizontal to the substrate inside the film, and In addition, napping treatment becomes unnecessary.
The width of the groove formed on the surface of the field electron emission film is preferably in the range of 0.1 to 50 μm. If the width of the groove is less than 0.1 μm, even if CNT is partially exposed, its end may not necessarily be exposed, and selection of the means for forming the groove is also not preferable. When the width of the groove exceeds 50 μm, CNT contained in the film is unnecessarily removed, and when a light emitting element is formed, the in-plane uniformity of light emission may be lowered, which is not preferable. The width of the groove can be measured using an optical microscope or a scanning electron microscope.
The depth of the groove formed on the surface of the field electron emission film is preferably 0.1 μm or more. When the depth of the groove is less than 0.1 μm, the amount of CNT exposure is insufficient. There is no particular upper limit to the depth of the groove, and a groove reaching the same extent as the thickness of the field electron emission film, that is, the substrate may be formed.
The groove present on the surface of the field electron emission film preferably has a total extension of 2 mm or more per 1 mm 2 of a portion having a width in the range of 0.1 to 50 μm. If it is less than 2 mm, the light emission intensity of the light emitting element is lowered and the in-plane distribution of the light emission intensity is also deteriorated. If a groove having a width in the range of 0.1 to 50 μm is present in a total extension of 2 mm or more, a portion having a groove width of less than 0.1 μm or a portion exceeding 50 μm may be present in the same region. The length of the groove can be measured using an optical microscope or a scanning electron microscope. The total extension per 1 mm 2 of the groove whose width is in the range of 0.1 to 50 μm is the length of the portion within the range of 0.1 to 50 μm in each groove in the 1 mm × 1 mm region. It can be obtained by measuring and calculating the sum of the lengths.
［発光素子］
本発明において、発光素子は、上述の電界電子放出素子（電界電子放出電極、カソード）に、アノード電極および蛍光体が設けられている公知の構造体（アノード）を対向して配置し、前記電界電子放出素子と前記アノードとの間を真空に保持することにより製造される。アノード電極は、通常、光取出しのため、ガラス基板上に透明電極を形成し、それに蛍光体を被着させて製造される。対向させた電界電子放出電極とアノード電極とを、シール手段で封着して密閉構造とし、電極間を減圧することにより発光素子が製造されるが、簡易的な試験の場合など、電界電子放出電極とアノード電極とを対向させた構成体を、開放状態のまま密閉容器に収納し、その密閉容器自体を減圧することによっても発光素子を形成することが出来る。
本発明に従って製造される電界電子放出電極と通常使用されている公知のアノード電極とを対抗させる構成を採ることにより、輝度の面内均一性が高く、かつ、輝度の高い発光素子を得ることができる。また、本発明の発光素子の製造方法においては、電界電子放出に必要なＣＮＴに印加する電子放出電圧を小さくするために、発光素子内のＣＮＴにより近い箇所（カソードとアノードの間）に電極（ゲート電極またはグリッド電極）を設ける工程を含むことができる。
なお、本発明において真空とは、発光素子の発光を妨げない程度に減圧された状態を指し、通常は１０-1Ｐａ以下の圧力である。
[Light emitting element]
In the present invention, the light-emitting element is configured such that a known structure (anode) provided with an anode electrode and a phosphor is opposed to the above-described field electron-emitting device (field electron-emitting electrode, cathode), and the electric field It is manufactured by maintaining a vacuum between the electron-emitting device and the anode. The anode electrode is usually manufactured by forming a transparent electrode on a glass substrate for light extraction and attaching a phosphor to the transparent electrode. The field electron emission electrode and the anode electrode facing each other are sealed with a sealing means to form a sealed structure, and a light emitting device is manufactured by reducing the pressure between the electrodes. A light emitting element can also be formed by housing a structure in which an electrode and an anode electrode are opposed to each other in an open container and reducing the pressure of the closed container itself.
By adopting a configuration in which a field electron emission electrode manufactured according to the present invention is opposed to a commonly used known anode electrode, it is possible to obtain a light emitting device having high luminance in-plane uniformity and high luminance. it can. Further, in the method for manufacturing a light emitting device of the present invention, in order to reduce the electron emission voltage applied to the CNT required for field electron emission, an electrode ( A step of providing a gate electrode or a grid electrode).
In the present invention, the vacuum refers to a state where the pressure is reduced to such an extent that the light emission of the light emitting element is not hindered, and is usually a pressure of 10 −1 Pa or less.
［ＣＮＴ分散液］
ＣＮＴ分散液に添加するインジウム成分としては、有機インジウム化合物およびＩＴＯ粉が挙げられる。有機インジウム化合物としては、トリアルキルインジウムまたはインジウムアルコキシドを使用することができる。取扱の容易性の観点からトリアルキルインジウムとしてはトリブチルインジウムが好適な例として挙げられる。アルコキシドとしては、メトキシド、エトキシド、ブトキシド、イソプロポキシド等、加熱により酸化物に変化するものであれば、その種類は特に限定されない。
ＩＴＯ粉は、同時に錫成分でもあるが、その粒径が過大であれば、ＣＮＴの分散性に悪影響を及ぼすので、平均粒径として１０μｍ以下が好ましく０.１μｍ以下がさらに好ましい。
ＣＮＴ分散液に添加する錫成分としては、錫アルコキシドおよびＩＴＯ粉が挙げられる。アルコキシドとしては、インジウムアルコキシドと同様に、メトキシド、エトキシド、ブトキシド、イソプロポキシド等、加熱により酸化物に変化するものであれば、その種類は特に限定されない。
本発明に用いるＣＮＴ分散液は、ＩＴＯの前駆物質として、インジウム化合物、錫アルコキシドおよびＩＴＯ粉からなる群から選ばれた二種以上を含有する。具体的には、有機インジウム化合物と錫アルコキシド、並びに、有機インジウム化合物および錫アルコキシドの１種または２種とＩＴＯ粉の組み合わせがある。使用するＣＮＴの種類には、特に制限はないが、単層（シングルウォール）ＣＮＴを用いることが好ましい。使用する溶媒の種類には、特に制限はないが、インジウムおよびスズ成分にアルコキシドを用いる場合には、混合時の加水分解を抑制する観点から有機溶媒を使用することが好ましい。有機溶媒の好適な例として、アルコール、酢酸ブチル等が挙げられる。
ＣＮＴ分散液には、上記の他、分散剤、増粘剤等を添加することができる。
分散剤を使用することにより、ＣＮＴの分散性が向上する。分散剤は公知の分散剤を使用することができる。好適な例として、アニオン系の界面活性剤、ドデシルベンゼンスルホン酸、塩化ベンザルニコウム、ベンゼンスルホン酸ソーダ等が挙げられる。
ＣＮＴ分散液には、粘度調整のために、増粘剤を添加しても良い。ＣＮＴ分散液の粘度が低い場合、増粘剤を添加することにより、ＣＮＴ分散液の塗布性が向上し、基板と膜との密着性が向上する。増粘剤としては、公知の増粘剤を使用することができる。好適な例として、エチルセルロース等が挙げられる。
ＣＮＴ分散液の調製に当たって、ボールミル等を用いて混合すると、ＣＮＴ分散液中のＣＮＴの分散状態が向上する。
[CNT dispersion]
Examples of indium components added to the CNT dispersion include organic indium compounds and ITO powder. As the organic indium compound, trialkylindium or indium alkoxide can be used. From the viewpoint of ease of handling, a preferred example of trialkylindium is tributylindium. The alkoxide is not particularly limited as long as it changes into an oxide by heating, such as methoxide, ethoxide, butoxide, isopropoxide, and the like.
The ITO powder is also a tin component at the same time, but if the particle size is excessive, it adversely affects the dispersibility of the CNTs, so the average particle size is preferably 10 μm or less, more preferably 0.1 μm or less.
Examples of the tin component added to the CNT dispersion include tin alkoxide and ITO powder. The alkoxide is not particularly limited as long as it changes into an oxide by heating, such as methoxide, ethoxide, butoxide, isopropoxide, and the like as indium alkoxide.
The CNT dispersion used in the present invention contains two or more selected from the group consisting of indium compounds, tin alkoxides and ITO powders as ITO precursors. Specifically, there are organic indium compounds and tin alkoxides, and combinations of one or two of organic indium compounds and tin alkoxides with ITO powder. Although there is no restriction | limiting in particular in the kind of CNT to be used, It is preferable to use single layer (single wall) CNT. Although there is no restriction | limiting in particular in the kind of solvent to be used, When using an alkoxide for an indium and a tin component, it is preferable to use an organic solvent from a viewpoint of suppressing the hydrolysis at the time of mixing. Preferable examples of the organic solvent include alcohol, butyl acetate and the like.
In addition to the above, a dispersant, a thickener, and the like can be added to the CNT dispersion.
By using a dispersant, the dispersibility of CNTs is improved. A well-known dispersing agent can be used for a dispersing agent. Preferable examples include an anionic surfactant, dodecylbenzenesulfonic acid, benzalkonium chloride, sodium benzenesulfonate, and the like.
A thickener may be added to the CNT dispersion to adjust the viscosity. When the viscosity of the CNT dispersion liquid is low, by adding a thickener, the applicability of the CNT dispersion liquid is improved, and the adhesion between the substrate and the film is improved. A known thickener can be used as the thickener. A preferred example is ethyl cellulose.
In preparing the CNT dispersion, mixing with a ball mill or the like improves the dispersion state of the CNT in the CNT dispersion.
［ＣＮＴ含有ＩＴＯ膜の形成］
まず、ＣＮＴ分散液を基板上に塗布して、塗布膜を形成する。塗布方法は、スプレー塗布、スピン塗布、ディップ塗布等の公知の方法を用いることができる。引き続き、前記の塗布膜を３００℃〜６００℃で加熱（焼成）することにより、ＩＴＯを主成分とし、ＣＮＴを微量含む膜を得ることができる。焼成は、大気雰囲気で行っても良いし、窒素、アルゴン等の不活性ガス中で行っても良い。焼成の前に３００℃未満の温度で、塗布膜の乾燥（溶媒成分の除去）を行っても良い。
[Formation of CNT-containing ITO film]
First, a CNT dispersion is applied onto a substrate to form a coating film. As a coating method, known methods such as spray coating, spin coating, and dip coating can be used. Subsequently, by heating (baking) the coating film at 300 ° C. to 600 ° C., a film containing ITO as a main component and containing a small amount of CNT can be obtained. Firing may be performed in an air atmosphere or in an inert gas such as nitrogen or argon. The coating film may be dried (removal of the solvent component) at a temperature of less than 300 ° C. before firing.
［ＣＮＴ含有ＩＴＯ膜のエッチング処理］
焼成して得られたＣＮＴ含有ＩＴＯ膜に対して湿式でエッチングを行う。湿式のエッチングは、ＩＴＯ膜およびＣＮＴに対するダメージが少ない。ＣＮＴ含有ＩＴＯ膜にエッチングを行うことにより、最終的に発光素子の輝度が向上する理由は、現時点では明確には解明されていなが、本発明者らは、エッチングによりＩＴＯの結晶粒界部分が選択的に除去されるため、粒界部に存在していたＣＮＴの一部が露出した状態となるためと推定している。その結果、膜表面に溝を形成した際に、溝の側面から露出するＣＮＴの数が増加することにより、電解電子放出が起こりやすくなり、結果として発光素子の輝度が向上したものと考えている。また、粒界部で結晶欠陥が除去されることにより、粒界部でトラップされる電流が減少する効果も、併せて考えられる。
エッチング液としては、ＩＴＯに対して溶解作用を持つものであれば特に制限は無いが、溶解能力の観点から、酸の水溶液を使用することが好ましい。酸の水溶液として、シュウ酸、硝酸、塩酸、硫酸、リン酸、フッ酸、ヨウ素酸、第二塩化鉄等の水溶液、およびそれらの混酸溶液が使用可能であるが、腐食性が少なく、ｐＨ緩衝能力を有するシュウ酸の水溶液を用いることが好ましい。エッチングは、通常の化学エッチングおよび電解エッチングのいずれでも構わないが、電解エッチングが好ましい。電解エッチングは、エッチング液中でＣＮＴ含有ＩＴＯ膜に通電することにより行うが、電解エッチングとすることにより、ＩＴＯの結晶粒界部分の除去が促進され、エッチング時間を短時間とすることができる。
エッチングによるＣＮＴ含有ＩＴＯ膜の除去量は、エッチング前のＣＮＴ含有ＩＴＯ膜に対して０.５質量％〜５０質量％とすることが好ましい。除去量が０.５質量％未満の場合には、輝度向上の効果が十分得られない場合があり、除去量が５０質量％を越える場合には、膜の強度が十分得られない場合がある。エッチングによるＣＮＴ含有ＩＴＯ膜の除去量は、２質量％〜４０％とすることが更に好ましい。
[Etching treatment of CNT-containing ITO film]
Etching is performed wet on the CNT-containing ITO film obtained by baking. Wet etching causes little damage to the ITO film and CNTs. The reason why the brightness of the light emitting element is finally improved by etching the CNT-containing ITO film has not been clearly clarified at the present time. Since it is selectively removed, it is estimated that a part of the CNT existing at the grain boundary portion is exposed. As a result, when a groove is formed on the film surface, the number of CNT exposed from the side surface of the groove increases, so that electrolytic electron emission is likely to occur, and as a result, the luminance of the light-emitting element is improved. . Moreover, the effect of reducing the current trapped at the grain boundary part by removing crystal defects at the grain boundary part is also considered.
The etching solution is not particularly limited as long as it has a dissolving action on ITO, but it is preferable to use an acid aqueous solution from the viewpoint of dissolving ability. As an aqueous solution of acid, aqueous solutions of oxalic acid, nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, hydrofluoric acid, iodic acid, ferric chloride, etc., and mixed acid solutions thereof can be used. It is preferable to use an aqueous solution of oxalic acid having the ability. Etching may be either normal chemical etching or electrolytic etching, but electrolytic etching is preferable. Electrolytic etching is performed by energizing the CNT-containing ITO film in an etching solution. However, by using electrolytic etching, removal of the crystal grain boundary portion of ITO is promoted, and the etching time can be shortened.
The removal amount of the CNT-containing ITO film by etching is preferably 0.5% by mass to 50% by mass with respect to the CNT-containing ITO film before etching. When the removal amount is less than 0.5% by mass, the effect of improving the luminance may not be sufficiently obtained. When the removal amount exceeds 50% by mass, the film strength may not be sufficiently obtained. . The removal amount of the CNT-containing ITO film by etching is more preferably 2% by mass to 40%.
［溝の形成］
本発明に用いる電界電子放出膜を得るためには、ＣＮＴ含有膜の表面に溝を形成する必要がある。溝の形成方法に特に限定はなく、機械的方法、化学的な方法のいずれでも適用することが可能であるが、ＣＮＴへのダメージを避けるために可能な限り低温プロセスを使用することが好ましい。前者の例として、サンドペーパーによる機械的研摩等が挙げられ、後者の例として、フォトレジストによるマスキングとエッチングとの組み合わせにより溝を形成するプロセス等が挙げられる。これらの例示の方法以外でも、溝を形成する際、溝内のＣＮＴが全ては除去されず、溝の壁面にＣＮＴの端部が露出して残留する状態となる方法であれば、いずれも適用することができる。
サンドペーパーによる機械的研摩は、砥粒により機械的に溝を形成するものであるが、低温プロセスであり、溝の形成の際に膜中のＣＮＴにダメージを与えない上に、溝の形成以外にＣＮＴ含有ＩＴＯ膜の表面を一部除去して、ＣＮＴを露出させる効果も有しているので、好ましい。
[Groove formation]
In order to obtain the field electron emission film used in the present invention, it is necessary to form grooves on the surface of the CNT-containing film. There is no particular limitation on the method for forming the groove, and either a mechanical method or a chemical method can be applied. However, it is preferable to use a low temperature process as much as possible in order to avoid damage to the CNT. Examples of the former include mechanical polishing with sandpaper, and examples of the latter include a process of forming grooves by a combination of masking and etching with a photoresist. Any method other than these exemplified methods may be used as long as the CNT in the groove is not completely removed when the groove is formed, and the end of the CNT remains exposed on the wall surface of the groove. can do.
Mechanical polishing with sandpaper is to form grooves mechanically with abrasive grains, but it is a low-temperature process and does not damage the CNTs in the film during the formation of grooves. In addition, the surface of the CNT-containing ITO film is preferably partially removed to expose the CNT, which is preferable.
［実施例１］
［ＣＮＴ分散液］
酢酸ブチル５.９７４ｇに下記を添加し、攪拌混合することにより、溶液を得た。
・トリブチルインジウム（Ｃ12Ｈ27Ｉｎ）（Ｉｎとして０.０８９ｇを含む）
・テトラブトキシ錫（Ｃ16Ｈ36Ｏ4Ｓｎ）（Ｓｎとして０.０３５ｇを含む）
得られた溶液に下記を添加し、攪拌混合することにより、ＣＮＴ含有液を得た。
・ＩＴＯ粉０.３１３ｇ（平均一次粒径２５ｎｍ、特開２０１１−１２６７４６号公報に記載の実施例５の方法で製造した。）
・カーボンナノチューブ（シングルウォール、Ｈａｎｗｈａ Ｎａｎｏｔｅｃｈ社製、ＡＳＰ−１００Ｆ）０.０１ｇ
・ドデシルベンゼンスルホン酸０.０１ｇ
・エチルセルロース（関東化学製、エチルセルロース１００ｃＰ（エトキシ含有量４８〜４９.５％）０.０４ｇ
得られたＣＮＴ含有溶液に、粒径１ｍｍのジルコニアボール４ｇを添加して、攪拌羽を回転させることによる１次撹拌を６時間実施した後に、粒径１ｍｍのジルコニアボールを取り除いた。その後、粒径０.３ｍｍのジルコニアボール４ｇ及び酢酸ブチル４ｇを加え、攪拌羽を回転させることによる２次撹拌を６時間実施した後に、粒径０.３ｍｍのジルコニアボールを取り除いた。その後、粒径０.０５ｍｍのジルコニアボール４ｇ及び酢酸ブチル２ｇを加え、攪拌羽を回転させることによる３次撹拌を６時間実施した。その後粒径０.０５ｍｍのジルコニアボールを取り除いて、ＣＮＴ分散液を得た。
[Example 1]
[CNT dispersion]
The following was added to 5.974 g of butyl acetate and mixed by stirring to obtain a solution.
Tributylindium (C 12 H 27 In) (including 0.089 g as In)
Tetrabutoxy tin (C 16 H 36 O 4 Sn) (including 0.035 g as Sn)
The following was added to the resulting solution and mixed by stirring to obtain a CNT-containing liquid.
-ITO powder 0.313g (average primary particle size 25nm, manufactured by the method of Example 5 described in JP-A-2011-126746)
・ Carbon nanotube (single wall, Hanwha Nanotech, ASP-100F) 0.01 g
・ 0.01 g of dodecylbenzenesulfonic acid
・ Ethylcellulose (Kanto Chemical Co., Ltd., ethyl cellulose 100 cP (ethoxy content 48 to 49.5%) 0.04 g
After adding 4 g of zirconia balls having a particle diameter of 1 mm to the obtained CNT-containing solution and performing primary stirring by rotating a stirring blade for 6 hours, the zirconia balls having a particle diameter of 1 mm were removed. Thereafter, 4 g of zirconia balls having a particle size of 0.3 mm and 4 g of butyl acetate were added and secondary stirring was performed by rotating the stirring blades for 6 hours, and then the zirconia balls having a particle size of 0.3 mm were removed. Thereafter, 4 g of zirconia balls having a particle size of 0.05 mm and 2 g of butyl acetate were added, and tertiary stirring was performed by rotating the stirring blade for 6 hours. Thereafter, the zirconia balls having a particle diameter of 0.05 mm were removed to obtain a CNT dispersion.
［ＣＮＴ含有ＩＴＯ膜］
塗装用エアガンを用い、１５０℃に加熱したＳｉウェハの表面に、前記ＣＮＴ分散液を塗布した。このとき、塗布膜厚は、焼成後の膜厚が５μｍになるように調整した。引き続き、ＣＮＴ分散液を塗布したＳｉウェハを、空気中２５０℃の条件下で３０分間加熱し、乾燥した。さらに、ＣＮＴ分散液を塗布し、乾燥したＳｉウェハを、真空中４７０℃の条件下で８０分間焼成して、Ｓｉウェハ上にＣＮＴ含有ＩＴＯ膜を生成させた。
[CNT-containing ITO film]
The CNT dispersion was applied to the surface of a Si wafer heated to 150 ° C. using a coating air gun. At this time, the coating film thickness was adjusted so that the film thickness after firing was 5 μm. Subsequently, the Si wafer coated with the CNT dispersion was heated in air at 250 ° C. for 30 minutes and dried. Further, the Si wafer coated with the CNT dispersion and dried was baked in vacuum at 470 ° C. for 80 minutes to form a CNT-containing ITO film on the Si wafer.
［ＣＮＴ含有ＩＴＯ膜のエッチング処理］
エッチング液として濃度１０ｇ／Ｌのシュウ酸水溶液（濃度は無水物として算出した）を用い、ＣＮＴ含有ＩＴＯ膜を生成したＳｉウェハをカソードとし、対極に導電性Ｓｉウェハを用い、前記正極面積１ｃｍ2当り電流１ｍＡの条件で３分間通電し、電解エッチングを行った。エッチング終了後、水洗および乾燥を行った。
[Etching treatment of CNT-containing ITO film]
An oxalic acid aqueous solution (concentration was calculated as an anhydride) having a concentration of 10 g / L as an etching solution, a Si wafer on which a CNT-containing ITO film was formed as a cathode, a conductive Si wafer as a counter electrode, and a positive electrode area of 1 cm 2 Electrolytic etching was performed by energizing for 3 minutes under the condition of a contact current of 1 mA. After completion of etching, washing and drying were performed.
［ＣＮＴ露出処理］
エッチング処理後のＣＮＴ含有ＩＴＯ膜中に含まれるＣＮＴを部分的に露出させるために、ＣＮＴ含有ＩＴＯ膜に機械的処理による溝の形成を行った。溝の形成は、ＣＮＴ含有ＩＴＯ膜の表面を＃２０００のサンドペーパーを用い、２方向にそれぞれ２回研摩することにより行った。Ｓｉ基板上に形成されたＣＮＴ含有ＩＴＯ膜にＣＮＴ露出処理を施したものをカソード電極とした。
［溝の評価］
前記のＣＮＴ露出処理によりＣＮＴ含有ＩＴＯ膜に形成された溝の存在密度、幅および深さは、以下の方法で評価した。
溝の幅および長さは、膜表面の１ｍｍ×１ｍｍの領域５箇所について、走査電子顕微鏡を用いて測定した。幅が０.１〜５０μｍの範囲である溝の総延長を各領域で測定し、その平均値を当該試料の溝の１ｍｍ2当たり総延長とした。
表面を観察した結果、本実施例では、幅が０.１〜５０μｍの範囲である溝の１ｍｍ2当たりの総延長は５０ｍｍであった。溝の深さを溝の１０箇所について表面粗さ計で測定した結果、いずれも０.１μｍ以上であった。
[CNT exposure treatment]
In order to partially expose the CNT contained in the CNT-containing ITO film after the etching treatment, grooves were formed in the CNT-containing ITO film by mechanical treatment. The grooves were formed by polishing the surface of the CNT-containing ITO film twice in two directions using # 2000 sandpaper. A cathode electrode was prepared by subjecting a CNT-containing ITO film formed on a Si substrate to CNT exposure treatment.
[Evaluation of groove]
The density, width and depth of the grooves formed in the CNT-containing ITO film by the CNT exposure treatment were evaluated by the following methods.
The width and length of the groove were measured using a scanning electron microscope for five 1 mm × 1 mm regions on the film surface. The total length of the groove having a width in the range of 0.1 to 50 μm was measured in each region, and the average value was defined as the total length per 1 mm 2 of the groove of the sample.
As a result of observing the surface, in this example, the total extension per 1 mm 2 of the groove having a width in the range of 0.1 to 50 μm was 50 mm. As a result of measuring the depth of the groove with a surface roughness meter at 10 points of the groove, all were 0.1 μm or more.
［カソード電極の評価］
（発光素子の作成）
得られたカソード電極を四角形に切断し、四角形の対向する２辺にガラスファイバー製スペーサー（直径４５０μｍ）を設置し、固定した。表面にＩＴＯを蒸着し、蛍光体を塗布したガラス板をアノード電極とした。アノード電極をカソード電極と同様の形状に切断した。アノード電極の蛍光体塗布面とカソード電極のＣＮＴ含有ＩＴＯ膜の存在する面が対向するように、アノード電極を前記スペーサーの上に設置・固定して、発光素子を形成した。なお、発光素子の発光面積は１辺７ｍｍの正方形とした。
（発光素子の発光状態の評価）
得られた発光素子のカソード電極およびアノード電極を電源装置に接続し、１０-4Ｐａの真空容器中に設置し、カソード電極に５ｋＶを印加して、発光素子を発光させた。その際、発光状態を目視で観察するとともに、ＣＣＤカメラを用いて撮影した。
発光素子の発光強度（輝度）は、輝度計（コニカミノルタオプティクス社製：ＬＳ−１００）を用いて測定した。輝度の測定は、真空容器のビューポート越しに、発光面上の５箇所について行った。
５箇所で測定した発光輝度は２５０〜３００ｃｄ／ｃｍ2の範囲であり、それらの平均値は２７０ｃｄ／ｃｍ2であった。この発光輝度は、エッチング処理を行わない下記の比較例の２倍以上の値である。
[Evaluation of cathode electrode]
(Creation of light emitting element)
The obtained cathode electrode was cut into a square, and glass fiber spacers (diameter: 450 μm) were placed on two opposite sides of the square to be fixed. A glass plate with ITO deposited on the surface and coated with a phosphor was used as the anode electrode. The anode electrode was cut into the same shape as the cathode electrode. The anode electrode was placed and fixed on the spacer so that the phosphor-coated surface of the anode electrode and the surface of the cathode electrode where the CNT-containing ITO film was present were opposed to form a light emitting device. The light emitting area of the light emitting element was a square with a side of 7 mm.
(Evaluation of light emitting state of light emitting element)
The cathode electrode and anode electrode of the obtained light-emitting element were connected to a power supply device, placed in a 10 −4 Pa vacuum vessel, and 5 kV was applied to the cathode electrode to cause the light-emitting element to emit light. At that time, the light emission state was visually observed and photographed using a CCD camera.
The light emission intensity (luminance) of the light emitting element was measured using a luminance meter (manufactured by Konica Minolta Optics: LS-100). The luminance was measured at five locations on the light emitting surface through the view port of the vacuum vessel.
The light emission luminance measured at five locations was in the range of 250 to 300 cd / cm 2 , and the average value thereof was 270 cd / cm 2 . This emission luminance is a value that is twice or more that of the following comparative example in which no etching treatment is performed.
［比較例１］
ＣＮＴ含有ＩＴＯ膜のエッチング処理をおこなわなかった以外は、実施例１と同様の手順で、ＦＥＬ素子を作成し、評価した。
ＣＮＴ露出処理を行い、溝を形成したＣＮＴ含有ＩＴＯ膜表面には、幅が０.１〜５０μｍの範囲である溝が１ｍｍ2当たりの総延長５５ｍｍで存在した。溝の深さを溝の１０箇所について表面粗さ計で測定した結果、いずれも０.１μｍ以上であった。発光素子を組み立てて、５箇所で測定した発光輝度は１０７〜１２０ｃｄ／ｃｍ2の範囲であり、それらの平均値は１０３ｃｄ／ｃｍ2であった。
[Comparative Example 1]
A FEL element was prepared and evaluated in the same procedure as in Example 1 except that the CNT-containing ITO film was not etched.
Grooves having a width in the range of 0.1 to 50 μm were present at a total extension of 55 mm per 1 mm 2 on the surface of the CNT-containing ITO film that had been subjected to CNT exposure treatment and formed with grooves. As a result of measuring the depth of the groove with a surface roughness meter at 10 points of the groove, all were 0.1 μm or more. The light emitting luminance measured at five locations after assembling the light emitting element was in the range of 107 to 120 cd / cm 2 , and the average value thereof was 103 cd / cm 2 .
Claims (5)
前記の酸化物膜に湿式のエッチング処理を施す工程、
前記のエッチング処理後の酸化膜表面に溝を形成し、その溝の壁面においてカーボンナノチューブを露出させる工程、
を有する、電界電子放出素子の製造方法。 Coating a carbon nanotube dispersion containing a tin-doped indium oxide precursor and carbon nanotubes on a substrate and heating to form a tin-doped indium oxide film containing carbon nanotubes;
Performing a wet etching process on the oxide film,
Forming a groove on the surface of the oxide film after the etching process, and exposing the carbon nanotube on the wall surface of the groove;
A method of manufacturing a field electron emission device comprising:
前記電界電子放出素子と、アノード電極および蛍光体が設けられている構造体（アノード）とを対向させて配置し、電界電子放出素子とアノードの間の空間を１０-1Ｐａ以下に減圧する工程、
を有する、発光素子の製造方法。 A step of manufacturing a field electron emission device by the method of manufacturing a field electron emission device according to claim 1,
The step of disposing the field electron emission device and a structure (anode) provided with an anode electrode and a phosphor so as to reduce the space between the field electron emission device and the anode to 10 −1 Pa or less. ,
A method for manufacturing a light-emitting element.
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