KR101714908B1 - Pellicle structure for extreme ultraviolet lithography - Google Patents

Abstract

A pellicle structure for extreme ultraviolet lithography may be provided, and the pellicle structure for extreme ultraviolet lithography comprises: a first protective layer which is disposed on a mask, and includes a silicon carbide (SiC); a core layer including a zirconium (Zr) on the first protective layer; a second protective layer including a silicon nitride (Si_3N_4) on the core layer; and a third protective layer including a silicon carbide (SiC) on the second protective layer.

Description

[0001] The present invention relates to a pellicle structure for extreme ultraviolet lithography,

The present invention relates to a pellicle structure for extreme ultraviolet lithography, and relates to a pellicle structure for extreme ultraviolet lithography, which is formed by laminating silicon carbide (SiC), zirconium (Zr) and silicon nitride (Si ₃ N ₄ ) having a specific thickness and having a high transmittance , And a pellicle structure for extreme ultraviolet lithography having low reflectance for out-of-band radiation.

As the degree of integration of semiconductor devices is rapidly increased, technology development has been actively carried out to improve the resolution. In order to improve the resolution, the shorter the exposure wavelength, the higher the resolution. For this purpose, the semiconductor device fabrication technology has been developed mainly in the lithography technology. Looking at the direction of development of the lithography technology according to the International Technology Roadmap for Semiconductors (ITRS), Immersion ArF lithography technology using an exposure wavelength of 193 nm, which can be applied to 32 nm and 22 nm patterns, is currently in use. It is expected to proceed with EUV (Extreme Ultra Violet) lithography using an exposure wavelength of 13.5nm which can be applied to 22nm pattern in the future.

In a transmissive lithography technique, a laser is passed through a photomask through a stepper in which a monochromatic light is generated through a photomask in which a semiconductor pattern is formed, and the laser beam passing through the photomask is reduced to a quarter of the photomask pattern on the wafer Thereby forming a pattern. During the lithography process, various contaminants are adsorbed on the mask surface, which acts as a defect in pattern formation, and is repeatedly transferred to the wafer. Therefore, it is necessary to use a pellicle to prevent this. The pellicle is located under the photomask to protect the mask from contaminating particles generated during exposure and has no effect on pattern formation. As the size and number of contaminant particles required in the semiconductor process are continuously decreased, the criterion for the contaminant particles generated on the surface of the pellicle becomes higher, and research on the improvement of the cleaning solution and method capable of minimizing the generation of such contaminants It is progressing.

For example, Korean Patent Publication No. KR20050112600A (Applicant: Dongbu HiTek, Application No. KR20040037708A) discloses a transparent thin film on a photomask, a frame attached to a photomask supporting the transparent thin film, And a plurality of pressure regulators in the form of a balloon provided on the outer surface of the frame in connection with the vent holes to completely seal the mask pattern area and attach the balloon pressure regulator to the frame, Discloses a technique for manufacturing a photomask pellicle that can inflate pellicles or prevent shrinkage at a low temperature, and can fundamentally prevent fine particles and chemical contamination.

As the memory capacity per area increases due to the high integration of semiconductor memory devices, the transmittance to extreme ultraviolet (EUV), which is capable of transferring a fine pattern on a silicon wafer, is high and the out- of-band (OoB) it is necessary to study a new lithography technique with a low reflectance for radiation.

Korean Patent Publication JP20050112600A

SUMMARY OF THE INVENTION It is an object of the present invention to provide a pellicle structure for extreme ultraviolet lithography having a high transmittance to extreme ultraviolet (EUV).

It is another object of the present invention to provide a pellicle structure for extreme ultraviolet lithography having low reflectance for out-of-band (OoB) radiation.

It is another object of the present invention to provide a pellicle structure for extreme ultraviolet lithography having a thickness of nanometer units.

Another object of the present invention is to provide a pellicle structure for extreme ultraviolet lithography in which the physical strain and the destruction rate are reduced.

It is another object of the present invention to provide a pellicle structure for extreme ultraviolet lithography that minimizes the oxidation reaction by oxygen (O ₂ ) in the air.

It is another object of the present invention to provide a pellicle structure for extreme ultraviolet lithography capable of transferring fine patterns of 10 nm or less.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above-described technical problem, the present invention provides a pellicle structure for extreme ultraviolet lithography.

According to one embodiment, the extreme ultraviolet lithography pellicle structure comprises a first protective layer disposed on a mask and comprising silicon carbide (SiC), a first protective layer comprising zirconium (Zr) on the first protective layer, A second protective layer comprising silicon nitride (Si ₃ N ₄ ) on the core layer, and a silicon carbide (SiC) on the second protective layer. And may include a third protective layer.

According to one embodiment, the thickness of the core layer of the pellicle structure for EUV lithography is 22 nm, the thickness of the first protective layer and the third protective layer is 1 nm, and the thickness of the second protective layer is 2 nm ≪ / RTI >

According to one embodiment, extreme ultraviolet (EUV) transmission of the pellicle structure for EUV lithography may include at least 90% transmission.

According to one embodiment, the out-of-band (OoB) radiation of the extreme ultraviolet lithography pellicle structure may include a reflectance of less than or equal to 11.76% for ArF wavelengths. have.

According to one embodiment, the out-of-band radiation of the pellicle structure for extreme ultraviolet lithography may have a reflectivity to the krypton fluoride (KrF) wavelength of 11.80% or less.

According to one embodiment, the thicknesses of the first protective layer and the third protective layer of the pellicle structure for EUV lithography are equal to each other, and the thickness of the second protective layer is different from the thickness of the first protective layer and the third protective layer And may include thicker than the thickness of the layer.

According to an embodiment of the present invention, there is provided a semiconductor device comprising a first protective layer disposed on a mask and comprising silicon carbide (SiC), a core layer comprising zirconium (Zr) on the first protective layer, a silicon nitride Si ₃ N ₄ ), and a third protective layer including silicon carbide (SiC) on the second protective layer, may be provided on the pellicle structure for ultraviolet ray lithography. The thickness of the first protective layer of the extreme ultraviolet lithography pellicle structure is 1 nm, the thickness of the core layer is 22 nm, the thickness of the second protective layer is 2 nm, and the thickness of the third protective layer is 1 nm. Lt; / RTI > and low reflectance for out-of-band radiation. Thus, a pellicle structure for extreme ultraviolet lithography, which improves the accuracy of a pattern formed on a silicon substrate during an extreme ultraviolet lithography process due to high transmittance to extreme ultraviolet rays and low reflectance to out-of-band radiation, can be provided.

The pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention may further include a multilayer thin film having a thickness of nanometers in which the first protective layer, the core layer, the second protective layer, It is possible to provide the pellicle structure for extreme ultraviolet lithography in which the transmittance to the extreme ultraviolet ray is high and physical deformation and destruction due to gravity and / or oxygen (O ₂ ) in air are minimized.

1 is a view for explaining a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention.
2 is a diagram for explaining an extreme ultraviolet lithography process using a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention.
FIG. 3 is a graph showing the reflectance of an extreme ultraviolet ray lithography pellicle structure according to an embodiment of the present invention and a second comparative example with respect to incident extreme ultraviolet rays.
4 is a graph showing the ratio of light amount of extreme ultraviolet rays reaching a silicon wafer after being incident on a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention and a second comparative example.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a view for explaining a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention.

1, a pellicle structure 100 for EUV lithography according to an embodiment of the present invention includes a first protective layer 110, a core layer 150, a second protective layer a second protective layer 120, and a third protective layer 130.

The first passivation layer 110 may include silicon carbide (SiC). The silicon carbide (SiC) included in the first passivation layer 110 may have an extinction coefficient of 0.01 or less with respect to an extreme ultraviolet (EUV) wavelength. Accordingly, the first passivation layer 110 may have a high transmittance to the extreme ultraviolet rays. The extinction coefficient is a constant related to the absorption of light, and the smaller the extinction coefficient value, the lower the absorption rate to light. In other words, the smaller the extinction coefficient value, the higher the transmittance to light. According to one embodiment, the wavelength of the extreme ultraviolet ray may be 13.5 nm.

In addition, the first passivation layer 110 may be a thin film having a thickness in the nanometer range. According to one embodiment, the thickness of the first passivation layer 110 may be 1 nm. If the thickness of the first passivation layer 110 is thicker than 1 nm, the transmittance of the extreme ultraviolet ray of the pellicle structure 100 for extreme ultraviolet lithography according to an embodiment of the present invention may be lowered. Out-of-band (OOB) radiation of the pellicle structure 100 for extreme ultraviolet lithography according to an embodiment of the present invention may be performed when the thickness of the first passivation layer 110 is greater than 1 nm. The reflectance can be increased. The out-of-band radiation may include light for argon fluoride (ArF) and krypton fluoride (KrF) wavelengths.

The core layer 150 may be disposed on the first passivation layer 110 and may include zirconium (Zr). The zirconium (Zr) contained in the core layer 150 may have an extinction coefficient of 0.01 or less with respect to the extreme ultraviolet wavelength, like the silicon carbide (SiC) included in the first passivation layer 110. Accordingly, the core layer 150 may have a high transmittance to the extreme ultraviolet ray. In addition, the core layer 150 may be a thin film having a thickness of the order of nanometers. According to one embodiment, the thickness of the core layer 150 may be 22 nm. If the thickness of the core layer 150 is thicker than 22 nm, the transmittance of the extreme ultraviolet ray lithography pellicle structure 100 according to the embodiment of the present invention to the extreme ultraviolet ray may be lowered. In addition, if the thickness of the core layer 150 is thinner than 22 nm, the reflectance of the pellicle structure 100 for extreme ultraviolet lithography according to an embodiment of the present invention to the out-of-band radiation can be increased.

The second passivation layer 120 may be disposed on the core layer 150 and may include silicon nitride (Si ₃ N ₄ ). Silicon nitride (Si ₃ N ₄ ) included in the second passivation layer 120 may be formed of silicon carbide (SiC) included in the first passivation layer 110 and zirconium Zr), it may have an extinction coefficient of 0.01 or less with respect to the extreme ultraviolet wavelength. Accordingly, the second passivation layer 120 may have a high transmittance to the extreme ultraviolet rays. Also, the second passivation layer 120 may be a thin film having a thickness of nanometer. According to one embodiment, the thickness of the second passivation layer 120 may be 2 nm. If the thickness of the second protective layer 120 is thicker than 2 nm, the transmittance of the extreme ultraviolet ray lithography pellicle structure 100 according to the embodiment of the present invention to the extreme ultraviolet ray may be lowered. In addition, when the thickness of the second protective layer 120 is thinner than 2 nm, the reflectance of the extreme ultraviolet lithography pellicle structure 100 according to the embodiment of the present invention to the out-of-band radiation can be increased.

The third passivation layer 130 may be disposed on the second passivation layer 120 and may include a nanometer unit containing silicon carbide (SiC), as described with reference to the first passivation layer 110, Thickness thin film. According to one embodiment, the thickness of the third passivation layer 130 may be 1 nm.

As described above, the thicknesses of the first protective layer 110 and the third protective layer 130 of the pellicle structure 100 for extreme ultraviolet lithography according to the embodiment of the present invention may be equal to each other, The thickness of the second protective layer 120 may be greater than the thickness of the first protective layer 110 and the third protective layer 130. The pellicle structure 100 for extreme ultraviolet lithography thus has the first protective layer 110 (1 nm) having a high transmittance to the extreme ultraviolet ray and a low reflectance to the out-of-band radiation, The second passivation layer 120 (2 nm), and the third passivation layer 130 (1 nm). Accordingly, the extreme ultraviolet lithography pellicle structure 100 according to an embodiment of the present invention has a high transmittance to extreme ultraviolet rays and a low reflectance to out-of-band radiation. Therefore, in the extreme ultraviolet lithography process, It is possible to improve the accuracy of the pattern formed on the substrate.

The pellicle structure 100 for extreme ultraviolet lithography according to an embodiment of the present invention includes thin films having a thickness of nanometers (the first protective layer 110, the core layer 150, The second passivation layer 120, and the third passivation layer 130) may be stacked on top of each other to form a multi-stack membrane having a thickness in the nanometer scale. Since the pellicle structure 100 for extreme ultraviolet lithography has a thin thickness in the nanometer range, the transmittance of the extreme ultraviolet lithography pellicle structure 100 to the extreme ultraviolet ray can be improved. In addition, due to the multi-layered structure of the pellicle structure 100 for extreme ultraviolet lithography, physical deformation and destruction of the pellicle structure 100 for gravity-induced extreme ultraviolet lithography can be minimized. In addition, due to the multi-layered structure of the pellicle structure 100 for extreme ultraviolet lithography, the oxidation reaction of the pellicle structure 100 for extreme ultraviolet lithography by oxygen (O ₂ ) in the air can be minimized have.

Hereinafter, referring to FIG. 2, a method of transferring a fine pattern onto a silicon substrate using a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention will be described.

2 is a diagram for explaining an extreme ultraviolet lithography process using a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention.

Referring to FIG. 2, a pellicle structure 100 for EUV lithography according to an embodiment of the present invention may be disposed on a mask 200 having a mask pattern 210 formed thereon. In other words, one surface 200a of the mask 200 and one surface 110a of the first protective layer 110 of the extreme ultraviolet lithography pellicle structure 100 may be arranged corresponding to each other. A pellicle frame 230 may be disposed on the edge of the extreme ultraviolet lithography pellicle structure 100. The first passivation layer 110 may be separately disposed on the mask 200 by the supporter 230. In other words, the extreme ultraviolet lithography pellicle structure 100 may be separately disposed on the mask 200.

Extreme ultraviolet light may be incident on the pellicle structure 100 for EUV lithography. According to one embodiment, the wavelength of the extreme ultraviolet ray may be 13.5 nm. The extreme ultraviolet light incident on the pellicle structure 100 for extreme ultraviolet lithography may reach the mask 200 after passing through the extreme ultraviolet lithography pellicle structure 100. The extreme ultraviolet light reflected corresponding to the mask pattern 210 of the mask 200 passes through the extreme ultraviolet lithography pellicle structure 100 and then passes through the reflective optical mirror 250 , And a silicon wafer (300). Accordingly, a pattern corresponding to the mask pattern 210 of the mask 200 may be formed on the silicon wafer 300. According to one embodiment, the size of the pattern formed on the silicon wafer 300 may be 10 nm or less.

As described above, the extreme ultraviolet lithography pellicle structure 100 may be disposed on the mask 200. Accordingly, it is possible to minimize the adherence of contaminants generated in the extreme ultraviolet lithography process onto the mask 200. In other words, contaminants generated in the extreme ultraviolet lithography process may be deposited on the pellicle structure 100 for extreme ultraviolet lithography disposed on the mask 200. Accordingly, the path of the light of the extreme ultraviolet ray reflected from the mask 200 can be prevented from being changed by the contaminants attached on the mask 200.

Unlike the embodiments of the present invention described above, conventional extreme ultraviolet lithography processes use a spectral purity filter to remove out-of-band radiation contained in extreme ultraviolet radiation. In this case, visible light and infrared light in the out-of-band radiation can be removed, but light in the far-ultraviolet region can not be removed. At present, a filter capable of removing light in the far ultraviolet ray region has not been developed, and thus it is difficult to effectively control the light in the far ultraviolet ray region in a conventional extreme ultraviolet ray optical system.

Further, in the conventional extreme ultraviolet lithography process, a pellicle of a single-layer thin film structure having a thin thickness of nanometer unit is used in order to improve the transmittance to the extreme ultraviolet ray. In this case, due to the single-layered film structure having a thickness of nanometer unit, the single-layered film can be physically deformed and destroyed by gravity. Further, the single-layered film may be oxidized by oxygen (O ₂ ) in the air, and deformation may occur in the single-layered film structure. Accordingly, after the light passes through the pellicle to reach the mask pattern, the path of the light of the extreme ultraviolet ray reflected is changed to form a distorted pattern on the silicon substrate.

However, as described above, the extreme ultraviolet lithography pellicle structure 100 according to the embodiment of the present invention includes the first passivation layer 110 disposed on the mask 200 and including silicon carbide (SiC) A core layer 150 including zirconium (Zr) on the first protective layer 110, a second protective layer 120 including silicon nitride (Si ₃ N ₄ ) on the core layer 150, 2 protective layer 120, and a third protective layer 130 comprising silicon carbide (SiC) on the protective layer 120. In addition, the extreme ultraviolet lithography pellicle structure 100 may include the first protective layer 110 (1 nm) having a high transmittance to the extreme ultraviolet ray and a low reflectance to the out-of-band radiation, The second passivation layer 120 (2 nm), and the third passivation layer 130 (1 nm). Accordingly, the extreme ultraviolet lithography pellicle structure 100 according to the embodiment of the present invention can improve the accuracy of the pattern formed on the silicon substrate in the extreme ultraviolet lithography process.

The pellicle structure 100 for extreme ultraviolet lithography according to an embodiment of the present invention may have a structure in which the first protective layer 110, the core layer 150, the second protective layer 120, The thickness of the pellicle structure for the extreme ultra violet ray lithography 100 can be minimized due to the high transmittance of the extreme ultraviolet rays and the gravity of the multi- . In addition, the oxidation reaction of the pellicle structure 100 for ultra-violet ray lithography by oxygen (O ₂ ) in the air can be minimized.

Hereinafter, the characteristic evaluation results of the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention described above will be described.

A core layer (17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm) including a first protective layer and a third protective layer (1 nm, 2 nm, 3 nm, 4 nm, 5 nm) containing zirconium (Zr) (1 nm, 2 nm, 3 nm, 4 nm, and 5 nm) containing silicon nitride (Si ₃ N ₄ ) having different thicknesses of 23 nm, 24 nm, 25 nm, 26 nm, and 27 nm, . The reflectance and extreme ultraviolet transmittance of the produced extreme ultraviolet lithography pellicle structure to the wavelengths of argon fluoride (ArF) and krypton fluoride (KrF) corresponding to the out-of-band radiation were measured, The thicknesses of the first protective layer, the second protective layer, the core layer, and the third protective layer having a low reflectivity to out-of-band radiation are derived.

Hereinafter, as described above, it is preferable that the extreme ultraviolet ray lithography pellicle structure produced by varying the thicknesses of the first protective layer, the second protective layer, the core layer, The reflectance against the argon fluoride (ArF) wavelength was measured and is shown in [Table 1] to [Table 11] below.

The core layer (Zr)
17 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 16.32 18.01 17.48 20.63 27.57 2 nm 15.82 17.00 17.31 21.78 29.41 3 nm 15.44 16.28 17.52 23.13 31.23 4 nm 15.16 15.84 18.05 24.60 32.98 5 nm 14.98 15.65 18.82 26.12 36.64

The core layer (Zr)
18nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 15.59 16.53 16.48 20.71 28.36 2 nm 15.00 15.65 16.62 22.10 30.28 3 nm 14.55 15.09 17.12 23.63 32.13 4 nm 14.24 14.82 17.90 25.23 33.89 5 nm 14.05 14.82 18.89 26.84 35.54

The core layer (Zr)
19 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 14.84 15.17 15.72 20.98 29.19 2 nm 14.17 14.44 16.15 22.56 31.14 3 nm 13.68 14.05 16.92 24.23 33.01 4 nm 13.35 13.97 17.92 25.92 34.76 5 nm 13.17 14.15 19.09 27.59 36.39

The core layer (Zr)
20 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 14.09 13.94 15.19 21.38 30.03 2 nm 13.35 13.37 15.89 23.11 32.01 3 nm 12.83 13.16 16.88 24.88 33.87 4 nm 12.49 13.27 18.08 26.64 35.60 5 nm 12.34 13.64 19.40 28.34 37.21

The core layer (Zr)
21 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 13.33 12.83 14.85 21.88 30.87 2 nm 12.55 12.44 15.79 23.72 32.85 3 nm 12.00 12.42 16.99 25.57 34.69 4 nm 11.68 12.71 18.34 27.37 36.40 5 nm 11.57 13.26 19.79 29.10 37.97

The core layer (Zr)
22 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 12.58 11.87 14.69 22.46 31.70 2 nm 11.76 11.66 15.84 24.38 33.66 3 nm 11.22 11.82 17.21 26.27 35.48 4 nm 10.92 12.29 18.70 28.10 37.15 5 nm 10.86 13.01 20.25 29.84 38.69

The core layer (Zr)
23nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 11.84 11.04 14.67 23.08 32.49 2 nm 11.00 11.01 16.01 25.06 34.43 3 nm 10.47 11.36 17.52 26.98 36.22 4 nm 10.21 12.00 19.12 28.82 37.90 5 nm 10.21 12.87 20.76 30.56 39.37

The core layer (Zr)
24nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 11.11 10.33 14.77 23.72 33.26 2 nm 10.28 10.49 16.27 25.74 35.17 3 nm 9.77 11.02 17.90 27.68 36.92 4 nm 9.56 11.82 19.59 29.52 38.53 5 nm 9.62 12.83 21.29 31.25 40.00

The core layer (Zr)
25 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 10.41 9.76 14.98 24.39 33.99 2 nm 9.59 10.10 16.61 26.43 35.87 3 nm 9.12 10.79 18.34 28.37 37.59 4 nm 8.97 11.74 20.10 30.20 39.16 5 nm 9.10 12.88 21.84 31.92 40.58

The core layer (Zr)
26 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 9.74 9.30 15.26 25.05 34.69 2 nm 8.94 9.81 17.00 27.10 36.52 3 nm 8.52 10.65 18.81 29.04 38.21 4 nm 8.43 11.74 20.62 30.86 39.74 5 nm 8.64 12.99 22.40 32.55 41.12

The core layer (Zr)
27 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 9.09 8.95 15.61 25.70 35.34 2 nm 8.33 9.62 17.44 27.75 37.14 3 nm 7.97 10.61 19.31 29.68 38.78 4 nm 7.95 11.82 21.16 31.48 40.28 5 nm 8.24 13.17 22.97 33.15 41.63

Referring to [Table 1] to [Table 11], as the thickness of the first protective layer and the third protective layer increases, regardless of the thicknesses of the core layer and the second protective layer, It was confirmed that the reflectance of the pellicle structure with respect to the argon (ArF) wavelength in the out-of-band radiation was increased. From this, it was found that when the thicknesses of the core layer and the second protective layer were 1 nm, the reflectance of the extreme ultraviolet lithography pellicle structure to the argon fluoride argon (ArF) wavelength was low.

Wherein the thickness of the first protective layer and the third protective layer is 1 nm. As the thickness of the core layer and the second protective layer increases, argon fluoride (ArF) in the out of band radiation of the extreme ultraviolet lithography pellicle structure ) Wavelength of the light-emitting layer.

Hereinafter, as described above, it is preferable that the extreme ultraviolet lithography pellicle structure produced by varying the thicknesses of the first protective layer, the second protective layer, the core layer, The reflectance against the krypton fluoride (KrF) wavelength was measured and shown in [Table 12] to [Table 22] below.

The core layer (Zr)
17 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 11.04 11.36 12.92 14.58 15.44 2 nm 9.89 10.55 12.15 13.60 14.12 3 nm 8.94 9.91 11.50 12.73 12.94 4 nm 8.21 9.43 10.98 12.00 11.91 5 nm 7.70 9.11 10.60 11.39 11.06

The core layer (Zr)
18nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 11.64 11.54 12.61 13.77 14.18 2 nm 10.30 10.53 11.65 12.64 12.74 3 nm 9.16 9.69 10.84 11.64 11.48 4 nm 8.25 9.04 10.18 10.81 10.42 5 nm 7.57 8.58 9.69 10.15 9.58

The core layer (Zr)
19 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 12.23 11.71 12.32 13.01 12.96 2 nm 10.70 10.51 11.18 11.72 11.42 3 nm 9.38 9.50 10.20 10.60 10.11 4 nm 8.30 8.68 9.41 9.68 9.04 5 nm 7.46 8.08 8.82 8.98 8.23

The core layer (Zr)
20 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 12.79 11.89 12.04 12.27 11.80 2 nm 11.08 10.50 10.73 10.84 10.18 3 nm 9.59 9.31 9.60 9.62 8.82 4 nm 8.34 8.34 8.69 8.63 7.76 5 nm 7.36 7.61 8.00 7.89 7.00

The core layer (Zr)
21 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 13.33 12.06 11.78 11.56 10.70 2 nm 11.45 10.49 10.29 10.00 9.01 3 nm 9.80 9.13 9.03 8.68 7.63 4 nm 8.39 8.02 8.00 7.64 6.59 5 nm 7.25 7.16 7.23 6.88 5.91

The core layer (Zr)
22 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 13.84 12.22 11.52 10.88 9.65 2 nm 11.80 10.48 9.88 9.21 7.92 3 nm 9.99 8.96 8.48 7.81 6.54 4 nm 8.43 7.71 7.35 6.72 5.55 5 nm 7.15 6.73 6.51 5.96 4.95

The core layer (Zr)
23nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 14.32 12.37 11.27 10.23 8.67 2 nm 12.13 10.46 9.48 8.45 6.90 3 nm 10.16 8.80 7.96 6.99 5.54 4 nm 8.46 7.41 6.74 5.87 4.61 5 nm 7.05 6.33 5.84 5.12 4.12

The core layer (Zr)
24nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 14.77 12.50 11.02 9.61 7.74 2 nm 12.43 10.43 9.10 7.74 5.97 3 nm 10.32 8.63 7.46 6.22 4.65 4 nm 8.48 7.12 6.16 5.09 3.80 5 nm 6.95 5.94 5.21 4.36 3.42

The core layer (Zr)
25 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 15.19 12.61 10.87 9.01 6.88 2 nm 12.71 10.40 8.72 7.07 5.11 3 nm 10.46 8.46 6.99 5.51 3.85 4 nm 8.49 6.85 5.62 4.39 3.09 5 nm 6.85 5.57 4.63 3.69 2.84

The core layer (Zr)
26 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 15.58 12.71 10.53 8.44 6.08 2 nm 12.96 10.36 8.36 6.43 4.34 3 nm 10.58 8.30 6.54 4.86 3.15 4 nm 8.50 6.58 5.12 3.75 2.50 5 nm 6.75 5.23 4.10 3.10 2.38

The core layer (Zr)
27 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 15.93 12.78 10.28 7.89 5.35 2 nm 13.19 10.30 8.01 5.84 3.65 3 nm 10.69 8.13 6.12 4.26 2.54 4 nm 8.49 6.32 4.64 3.17 2.01 5 nm 6.64 4.90 3.61 2.58 2.03

Referring to [Table 12] to [Table 22], as the thickness of the second protective layer increases, regardless of the thicknesses of the core layer, the first protective layer and the third protective layer, It was confirmed that the reflectance of the pellicle structure with respect to the krypton fluoride (KrF) wavelength in the out-of-band radiation was decreased. From this, it was found that when the thickness of the second protective layer is 5 nm, the reflectance of the extreme ultraviolet lithography pellicle structure to the krypton fluoride (KrF) wavelength in the out-of-band radiation is low.

As the thickness of the second protective layer was 5 nm, it was confirmed that as the thickness of the core layer increased, the reflectance of the extreme ultraviolet lithography pellicle structure against the krypton fluoride (KrF) wavelength was lowered.

Hereinafter, as described above, the transmittance of extreme ultraviolet rays of the extreme ultraviolet lithography pellicle structure produced by varying the thicknesses of the first protective layer, the second protective layer, the core layer, and the third protective layer is The results are shown in [Table 23] to [Table 33] below.

The core layer (Zr)
17 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 92.45 91.71 90.92 90.12 89.30 2 nm 91.71 90.94 90.14 89.34 88.52 3 nm 90.96 90.15 89.36 88.58 87.76 4 nm 90.17 89.35 88.59 87.82 87.03 5 nm 89.36 88.56 87.83 87.08 86.30

The core layer (Zr)
18nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 92.17 91.41 90.61 89.80 88.96 2 nm 91.43 90.63 89.83 89.02 88.19 3 nm 90.65 89.83 89.05 88.26 87.45 4 nm 89.84 89.04 88.28 87.51 86.73 5 nm 89.02 88.26 87.53 86.77 86.00

The core layer (Zr)
19 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 91.90 91.10 90.30 89.48 88.65 2 nm 91.13 90.31 89.52 88.71 87.89 3 nm 90.33 89.52 88.74 87.96 87.17 4 nm 89.51 88.74 87.99 87.21 86.44 5 nm 88.71 87.98 87.24 86.47 85.71

The core layer (Zr)
20 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 91.60 90.78 89.98 89.17 88.35 2 nm 90.80 89.99 89.20 88.41 87.61 3 nm 89.99 89.21 88.44 87.65 86.89 4 nm 89.20 88.44 87.68 86.91 86.15 5 nm 88.43 87.69 86.93 86.17 85.41

The core layer (Zr)
21 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 91.25 90.44 89.66 88.86 88.07 2 nm 90.45 89.66 88.89 88.10 87.33 3 nm 89.66 88.90 88.13 87.35 86.59 4 nm 88.89 88.14 87.37 86.61 85.85 5 nm 88.15 87.39 86.62 85.87 85.10

The core layer (Zr)
22 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 90.88 90.10 89.34 88.56 87.77 2 nm 90.10 89.34 88.57 87.79 87.03 3 nm 89.34 88.58 87.81 87.04 86.28 4 nm 88.60 87.83 87.05 86.30 85.54 5 nm 87.85 87.07 86.30 85.57 84.80

The core layer (Zr)
23nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 90.52 89.77 89.02 88.24 87.46 2 nm 89.77 89.03 88.26 87.48 86.70 3 nm 89.04 88.27 87.49 86.73 85.96 4 nm 88.29 87.51 86.74 86.99 85.22 5 nm 87.53 86.73 85.99 85.26 84.50

The core layer (Zr)
24nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 90.20 89.47 88.71 87.93 87.13 2 nm 89.48 88.73 87.95 87.17 86.37 3 nm 88.74 87.96 87.18 86.42 85.63 4 nm 87.98 87.18 86.43 85.69 84.91 5 nm 87.19 86.41 85.69 84.96 84.20

The core layer (Zr)
25 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 89.93 89.19 88.41 87.62 86.80 2 nm 89.20 88.42 87.64 86.86 86.05 3 nm 88.44 87.65 86.88 86.12 85.33 4 nm 87.65 86.87 86.14 85.39 84.62 5 nm 86.86 86.11 85.40 84.66 83.91

The core layer (Zr)
26 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 89.66 88.89 88.10 87.31 86.49 2 nm 88.91 88.12 87.34 86.56 85.76 3 nm 88.13 87.34 86.59 85.82 85.04 4 nm 87.33 86.58 85.85 85.09 84.34 5 nm 86.55 85.84 85.11 84.37 83.62

The core layer (Zr)
27 nm A first protective layer, a third protective layer (SiC) 1 nm 2 nm 3 nm 4 nm 5 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 89.37 88.57 87.79 87.01 86.20 2 nm 88.60 87.80 87.04 86.26 85.48 3 nm 87.81 87.04 86.29 85.52 84.77 4 nm 87.03 86.29 85.55 84.80 84.06 5 nm 86.28 85.56 84.82 84.08 83.33

Referring to [Table 23] to [Table 33], as the thickness of the core layer, the first protective layer and the third protective layer increases, the transmittance of the extreme ultraviolet ray of the extreme ultraviolet lithography pellicle structure decreases Respectively. Further, it was confirmed that as the thickness of the second protective layer increases, the transmittance of the extreme ultraviolet ray of the pellicle structure for EUV lithography decreases. It was thus found that the thinner the thickness of the first protective layer, the core layer, the second protective layer and the third protective layer, the higher the transmittance of the extreme ultraviolet ray of the extreme ultraviolet lithography pellicle structure .

Wherein the out-of-band radiation (argon fluoride (ArF), krypton fluoride (KrF)) of the pellicle structure for extreme ultraviolet lithography according to the thickness of the first protective layer, the core layer, the second protective layer, ) And a transmittance measurement value for the extreme ultraviolet ray, the thicknesses of the first protective layer and the third protective layer are 1 nm, the thickness of the second protective layer is 2 nm, It was found that the optical characteristics of the pellicle structure for extreme ultraviolet lithography were the most excellent when the thickness of the pellicle structure was 22 nm. In other words, when the thickness of the first protective layer and the third protective layer is 1 nm, the thickness of the second protective layer is 2 nm, and the thickness of the core layer is 22 nm, the pellicle structure of the extreme ultraviolet lithography It was found that the transmittance to the extreme ultraviolet ray was the highest and the reflectance to the out-of-band radiation (argon fluoride (ArF) and krypton fluoride (KrF)) was the lowest. Referring to [Table 6] and [Table 17], when the thickness of the first protective layer and the third protective layer is 1 nm, the thickness of the second protective layer is 2 nm, and the thickness of the core layer is 22 nm , The reflectance of the pellicle structure for extreme ultraviolet lithography to the argon (ArF) wavelength of the out-of-band radiation was 11.76%, and the reflectance to the krypton fluoride (KrF) wavelength of the out-of-band radiation was confirmed to be 11.80%. In addition, referring to [Table 28], when the thicknesses of the first and third protective layers are 1 nm, the thickness of the second protective layer is 2 nm, and the thickness of the core layer is 22 nm, It was confirmed that the ultraviolet ray transmittance of the pellicle structure for ultraviolet lithography was 90.10%.

Hereinafter, a pellicle structure for extreme ultraviolet lithography was manufactured by varying the constituent materials of the core layer and the protective layer, and the stacking order. First, a first protective layer comprising silicon carbide (SiC), a core layer comprising zirconium (Zr), a second protective layer comprising silicon nitride (Si ₃ N ₄ ), and silicon carbide (SiC) And the third protective layer were stacked in this order to prepare a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention. The comparison of the present invention using silicon (Si) or silicon carbide (SiC) as the core layer and using silicon carbide (SiC) and / or silicon nitride (Si ₃ N ₄ ) A pellicle structure for extreme ultraviolet lithography according to the examples was prepared. However, the thickness of the core layer of the pellicle structure for extreme ultraviolet lithography according to the examples of the present invention and the examples of the present invention is equal to 22 nm, the thickness of the protective layers stacked on the upper and lower surfaces of the core layer Was fabricated to have a thickness of 1 nm to 2 nm and the reflectance of the out-of-band radiation (argon fluoride (ArF) and krypton fluoride (KrF)) was measured.

Hereinafter, the reflectance of the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention to the argon (ArF) wavelength in the out-of-band radiation is shown in Table 34 below. In addition, the reflectance of the pellicle structure for extreme ultraviolet lithography according to the comparative examples of the present invention to the argon (ArF) wavelength in the out-of-band radiation is shown in Tables 35 to 40 below.

Example _{(SiC / Si 3 N 4 /} Zr / SiC) The core layer (Zr)
22 nm The first protective layer,
The third protective layer (SiC) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 12.58 11.87 2 nm 11.76 11.66

Comparative Example 1 (Si ₃ N ₄ / Zr / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 12.16 11.28 2 nm 13.63 12.47

Comparative Example 2 (Si ₃ N ₄ / Si / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 62.28 57.55 2 nm 62.36 57.64

Comparative Example 3 (Si ₃ N ₄ / SiC / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 37.56 37.51 2 nm 37.81 37.78

Comparative Example 4 (Si / Zr / Si) The core layer (Zr)
22 nm The first protective layer
(Si) 1 nm 2 nm The second protective layer
(Si) 1 nm 16.89 23.01 2 nm 16.94 23.11

Comparative Example 5 (SiC / Zr / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(SiC) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 11.10 16.33 2 nm 11.55 15.90

Comparative Example 6 (Si ₃ N ₄ / SiC / Zr / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer,
The third protective layer (Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(SiC) 1 nm 11.86 12.71 2 nm 17.83 18.61

Referring to [Table 35] to [Table 37], when the core layer is made of zirconium (Zr) (reflectivity to argon (ArF) wavelength is about 12%), silicon (Si) (About 60% reflectance to argon (ArF) wavelength) or silicon carbide (SiC) reflectance (about 37% reflectance to argon fluoride It was confirmed that the reflectance to the argon fluoride (ArF) wavelength of the out-of-band radiation of the structure was low. From this, it was found that when the pellicle structure for extreme ultraviolet lithography was fabricated using zirconium (Zr) as the core layer, the reflectance to the argon fluoride (ArF) wavelength in the out-of-band radiation was low.

Referring to [Table 34], [Table 35], and [Tables 38] to [Table 40], when zirconium (Zr) is used as the core layer, The reflectivity of the out-of-band radiation with respect to the argon fluoride (ArF) wavelength according to the type and thickness of the protective layers was examined. (SiC) and silicon nitride (Zr) were formed on the upper and lower surfaces of the core layer containing zirconium (Zr) according to the example of the present invention, the first comparative example, the fifth comparative example and the sixth comparative example the Si ₃ N ₄₎ in the case of the first protective layer, the second protective layer, and / or the third passivation layer is EUV stacked lithographic pellicle structure comprising a zirconium (Zr) in accordance with a fourth Comparative example The first protective layer including silicon (Si) on the upper and lower surfaces of the core layer, and the second protective layer are laminated on the pellicle structure for ultraviolet ray lithography, It was confirmed that the reflectivity to the ArF wavelength was low. The reflectance values for the argon (ArF) wavelength in the out-of-band radiation of the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention, the first comparative example, the fifth comparative example and the sixth comparative example are greatly different .

Hereinafter, the reflectance of the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention to the krypton fluoride (KrF) wavelength in the out-of-band radiation is shown in Table 41 below. The reflectance of the pellicle structure for extreme ultraviolet lithography according to the comparative examples of the present invention to the krypton fluoride (KrF) wavelength in the out-of-band radiation is shown in Table 42 to Table 47 below.

Example _{(SiC / Si 3 N 4 /} Zr / SiC) The core layer (Zr)
22 nm The first protective layer,
The third protective layer (Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 13.84 12.22 2 nm 11.80 10.48

Comparative Example 1 (Si ₃ N ₄ / Zr / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 18.03 15.62 2 nm 19.11 16.74

Comparative Example 2 (Si ₃ N ₄ / Si / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 64.31 61.92 2 nm 64.37 61.98

Comparative Example 3 (Si ₃ N ₄ / SiC / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 55.54 54.80 2 nm 54.21 53.37

Comparative Example 4 (Si / Zr / Si) The core layer (Zr)
22 nm The first protective layer
(Si) 1 nm 2 nm The second protective layer
(Si) 1 nm 29.11 34.44 2 nm 31.52 36.31

Comparative Example 5 (SiC / Zr / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer
(SiC) 1 nm 2 nm The second protective layer
(Si ₃ N ₄ ) 1 nm 15.56 11.18 2 nm 16.68 12.32

Comparative Example 6 (Si ₃ N ₄ / SiC / Zr / Si ₃ N ₄ ) The core layer (Zr)
22 nm The first protective layer,
The third protective layer (Si ₃ N ₄ ) 1 nm 2 nm The second protective layer
(SiC) 1 nm 13.38 12.54 2 nm 9.50 9.16

Referring to [Table 42] to [Table 44], as in the reflectance results for the argon fluoride (ArF) wavelength in the out-of-band radiation, zirconium (Zr) (about the reflectivity to the krypton fluoride (Reflectance of about 63% for krypton fluoride (KrF) wavelength) or silicon carbide (SiC) (reflectance of about 54% for krypton fluoride (KrF) wavelength) ), The reflectance of the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention to the krypton fluoride (KrF) wavelength in the out-of-band radiation was confirmed to be low. From this, it was found that when the pellicle structure for extreme ultraviolet lithography was fabricated using zirconium (Zr) as the core layer, the reflectance to the krypton fluoride (KrF) wavelength in the out-of-band radiation was low.

Referring to [Table 41], [Table 42], and [Tables 45] to [Table 47], when zirconium (Zr) is used as the core layer, The reflectivity of the out-of-band radiation with respect to krypton fluoride (KrF) wavelength according to the type and thickness of the protective layers was examined. (SiC) and silicon nitride (Zr) were formed on the upper and lower surfaces of the core layer containing zirconium (Zr) according to the example of the present invention, the first comparative example, the fifth comparative example and the sixth comparative example the Si ₃ N ₄₎ in the case of the first protective layer, the second protective layer, and / or the third passivation layer is EUV stacked lithographic pellicle structure comprising a zirconium (Zr) in accordance with a fourth Comparative example And the first protective layer including silicon (Si) on the upper and lower surfaces of the core layer, and the second protective layer are laminated on the pellicle structure for ultraviolet ray lithography, (KrF) wavelength. Further, in the case of the pellicle structure for extreme ultraviolet lithography according to the examples of the present invention and the sixth comparative example (about 9 to 13% reflectance against the krypton fluoride (KrF) wavelength), the first comparative example and the fifth comparative example It was confirmed that the reflectance value with respect to the argon fluoride argon (ArF) wavelength in the out-of-band radiation was lower than that in the case of the pellicle structure for extreme ultraviolet lithography according to the present invention (reflectance to krypton krypton (KrF) wavelength of about 11 to 19%). From this, a first protective layer comprising silicon (Si) and silicon nitride (Si ₃ N ₄ ), a second protective layer and a third protective layer on the upper and lower surfaces of the core layer containing zirconium (Zr) A first protective layer including silicon (Si) and silicon nitride (Si ₃ N ₄ ) on the upper and lower surfaces of the core layer containing zirconium (Zr), and a second protective layer It was found that the reflectance value with respect to the argon fluoride (ArF) wavelength in the out-of-band radiation was lower than that in the case where the layers were stacked.

From the results of the reflectance measurement for the out-of-band radiation of the pellicle structure for extreme ultraviolet lithography according to the embodiments of the present invention described with reference to [Table 34] to [Table 47] and the comparative examples for the embodiment of the present invention, It was confirmed that the reflectance for the out-of-band radiation of the pellicle structure for EUV lithography according to the example of the present invention and the comparative example 6 is the lowest. However, as described with reference to [Table 1] to [Table 33], the protective layer containing silicon carbide (SiC) has a thickness of 1 nm and the protective layer containing silicon nitride (Si ₃ N ₄ ) Considering that the pellicle structure for extreme ultraviolet lithography has the best transmittance with respect to extreme ultraviolet rays when the thickness is 2 nm, according to the embodiment of the present invention, the first protection including silicon carbide (SIC) (2 nm) comprising silicon nitride (Si ₃ N ₄ ), silicon carbide (SiC), the core layer (22 nm) comprising zirconium (Zr) 3 protective layers were laminated in this order, it was found that the optical characteristics of the pellicle structure for EUV lithography were the most excellent. In other words, it can be seen that the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention has a high transmittance to the extreme ultraviolet ray and a low reflectance to the out-of-band radiation.

FIG. 3 is a graph showing the reflectance of an extreme ultraviolet ray lithography pellicle structure according to an embodiment of the present invention and a second comparative example with respect to incident extreme ultraviolet rays.

An extreme ultraviolet light source of 13.5 nm wavelength was irradiated to the pellicle structure for extreme ultraviolet lithography according to the example of the present invention and the second comparative example. The reflectance of the extreme ultraviolet ray incident on the pellicle structure for extreme ultraviolet lithography according to the example of the present invention and the second comparative example was measured.

Referring to FIG. 3, in the case of the pellicle structure for EUV lithography according to the second comparative example, it was confirmed that the reflectance for the out-of-band radiation was 60% at the maximum. On the other hand, in the case of the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention, it was confirmed that the reflectance for the out-of-band radiation is 20% at maximum and a low reflectance value. From this it can be seen that the pellicle structure for extreme ultraviolet lithography according to embodiments of the present invention has a low reflectance for the out-of-band radiation and is therefore suitable for use as a pellicle for extreme ultraviolet lithography.

4 is a graph showing the ratio of light amount of extreme ultraviolet rays reaching a silicon wafer after being incident on a pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention and a second comparative example.

An extreme ultraviolet light source of 13.5 nm wavelength was irradiated to the pellicle structure for extreme ultraviolet lithography according to the example of the present invention and the second comparative example. After entering the pellicle structure for extreme ultraviolet lithography according to the example of the present invention and the second comparative example, the light amount ratio of the extreme ultraviolet ray reaching the silicon wafer was measured. Specifically, through the pellicle structure for extreme ultraviolet lithography according to the example of the present invention and the second comparative example, the pellicle structure for extreme ultraviolet lithography according to the example of the present invention and the second comparative example was again passed And after passing through the reflection type optical system, the extreme ultraviolet light amount ratio reaching the silicon wafer was calculated.

Referring to FIG. 4, it was confirmed that the pellicle structure for extreme ultraviolet lithography according to an embodiment of the present invention has a higher extreme ultraviolet light quantity ratio reaching the silicon wafer than the pellicle structure for extreme ultraviolet lithography according to the second comparative example. Thus, it was confirmed that the pellicle structure for extreme ultraviolet lithography according to the embodiment of the present invention had better optical characteristics than the pellicle structure for extreme ultraviolet lithography according to the second comparative example.

Thus, the extreme ultraviolet lithography pellicle structure according to the embodiment of the present invention includes a first protective layer disposed on a mask and including silicon carbide (SiC), a core layer containing zirconium (Zr), a silicon nitride (Si ₃ N ₄ ), and a third protective layer 130 including silicon carbide (SiC) are stacked in this order. The thickness of the first protective layer of the extreme ultraviolet lithography pellicle structure is 1 nm, the thickness of the core layer is 22 nm, the thickness of the second protective layer is 2 nm, and the thickness of the third protective layer is 1 nm. Lt; / RTI > and low reflectance for out-of-band radiation. Thus, a pellicle structure for extreme ultraviolet lithography, which improves the accuracy of a pattern formed on a silicon substrate during an extreme ultraviolet lithography process due to high transmittance to extreme ultraviolet rays and low reflectance to out-of-band radiation, can be provided.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.

100: Pellicle structure for extreme ultraviolet lithography
110: first protective layer
110a: One side of the first protective layer
120: second protective layer
130: third protective layer
150: core layer
200: mask
200a: One side of the mask
210: mask pattern
230: Support
250: Reflective optical mirror
300: Silicon wafer

Claims (6)

A first protective layer disposed on the mask and comprising silicon carbide (SiC) and having a thickness of 1 nm;
A core layer containing zirconium (Zr) on the first protective layer and having a thickness of 22 nm;
A second protective layer comprising silicon nitride (Si3N4) on the core layer and having a thickness of 2 nm; And
A third protective layer containing silicon carbide (SiC) on the second protective layer and having a thickness of 1 nm,
Extreme-ultraviolet (EUV) transmission is 90% or more,
Out-of-band (OoB) radiation has a reflectance of less than 11.76% with respect to the ArF wavelength,
A pellicle structure for extreme ultraviolet lithography comprising the out-of-band radiation having a reflectivity to a krypton fluoride (KrF) wavelength of not more than 11.80%.
delete delete delete delete The method according to claim 1,
Wherein the first protective layer and the third protective layer have the same thickness,
Wherein the thickness of the second protective layer is thicker than the thickness of the first protective layer and the third protective layer.

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