KR101692668B1 - Composition for epoxy flux paste having best chikso-quality - Google Patents
Composition for epoxy flux paste having best chikso-quality Download PDFInfo
- Publication number
- KR101692668B1 KR101692668B1 KR1020160028810A KR20160028810A KR101692668B1 KR 101692668 B1 KR101692668 B1 KR 101692668B1 KR 1020160028810 A KR1020160028810 A KR 1020160028810A KR 20160028810 A KR20160028810 A KR 20160028810A KR 101692668 B1 KR101692668 B1 KR 101692668B1
- Authority
- KR
- South Korea
- Prior art keywords
- flux paste
- composition
- weight
- paste composition
- epoxy
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 82
- 230000004907 flux Effects 0.000 title claims abstract description 55
- 239000004593 Epoxy Substances 0.000 title claims abstract description 53
- 229910000679 solder Inorganic materials 0.000 claims abstract description 37
- 239000003822 epoxy resin Substances 0.000 claims abstract description 30
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- 239000003054 catalyst Substances 0.000 claims description 13
- 239000003638 chemical reducing agent Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 22
- 239000000463 material Substances 0.000 description 10
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 6
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 6
- -1 Glycidyl Diamine Diphenyl Methane Chemical compound 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000003085 diluting agent Substances 0.000 description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 230000001588 bifunctional effect Effects 0.000 description 4
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical class C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 239000011668 ascorbic acid Substances 0.000 description 3
- 235000010323 ascorbic acid Nutrition 0.000 description 3
- 229960005070 ascorbic acid Drugs 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000003607 modifier Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 229940014800 succinic anhydride Drugs 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- XTTIQGSLJBWVIV-UHFFFAOYSA-N 2-methyl-4-nitroaniline Chemical compound CC1=CC([N+]([O-])=O)=CC=C1N XTTIQGSLJBWVIV-UHFFFAOYSA-N 0.000 description 2
- CXXSQMDHHYTRKY-UHFFFAOYSA-N 4-amino-2,3,5-tris(oxiran-2-ylmethyl)phenol Chemical compound C1=C(O)C(CC2OC2)=C(CC2OC2)C(N)=C1CC1CO1 CXXSQMDHHYTRKY-UHFFFAOYSA-N 0.000 description 2
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N methylimidazole Natural products CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N monoethyl amine Natural products CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- KMOUUZVZFBCRAM-UHFFFAOYSA-N 1,2,3,6-tetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21 KMOUUZVZFBCRAM-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- WCOXQTXVACYMLM-UHFFFAOYSA-N 2,3-bis(12-hydroxyoctadecanoyloxy)propyl 12-hydroxyoctadecanoate Chemical class CCCCCCC(O)CCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCC(O)CCCCCC)COC(=O)CCCCCCCCCCC(O)CCCCCC WCOXQTXVACYMLM-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229960004106 citric acid Drugs 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 125000006222 dimethylaminomethyl group Chemical group [H]C([H])([H])N(C([H])([H])[H])C([H])([H])* 0.000 description 1
- AMTWCFIAVKBGOD-UHFFFAOYSA-N dioxosilane;methoxy-dimethyl-trimethylsilyloxysilane Chemical compound O=[Si]=O.CO[Si](C)(C)O[Si](C)(C)C AMTWCFIAVKBGOD-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 125000005456 glyceride group Chemical group 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229940083037 simethicone Drugs 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Epoxy Resins (AREA)
Abstract
More particularly, the present invention relates to a composition containing an epoxy resin having a viscosity of 10,000 to 30,000 cps, a haze value at room temperature of 0.7 to 1.0, Of the epoxy flux paste composition is 0.4 to 0.7. The use of the epoxy flux paste composition of the present invention can provide a semiconductor device mounting method capable of improving the adhesion and coating properties of the substrate and the solder ball as well as improving the process efficiency and manufacturing an electronic device having excellent electrical characteristics .
Description
More particularly, the present invention relates to a composition containing an epoxy resin having a viscosity of 10,000 to 30,000 cps, a haze value at room temperature of 0.7 to 1.0, Of the epoxy flux paste composition is 0.4 to 0.7.
2. Description of the Related Art Recently, miniaturization and high functionality of electronic devices have demanded higher densities of semiconductors and the like. As a result, there is a growing demand for miniaturization of the semiconductor package as well as high integration of the semiconductor chip itself. In this connection, a technique for a flip-chip package capable of mounting a semiconductor chip on a wiring board using a ball grid array (hereinafter referred to as BGA) package using solder balls has been developed.
In the mounting of such a semiconductor, a soldering flux is applied to a BGA or a main substrate, the surface tension of the metal connection is reduced so that the solder generates a metal bond to form a mechanically strong and electrically conductive joint, It has been common practice to penetrate the underfill resin composed of an epoxy resin between the substrates to improve the adhesion.
Specifically, in the process of mounting a solder ball to form a bump on a BGA substrate or a wafer, soldering is performed after the solder flux is applied to the BGA substrate or wafer and the solder ball is attached. In this case, So that the solder ball can be easily separated when there is an external impact. In order to solve this problem, attempts have been made to add a small amount of another metal as a dopant to the solder ball or to change the composition of the alloy used for the solder ball. However, in this case as well, There was a falling problem.
On the other hand, in order to compensate for external impact when the BGA substrate or wafer is mounted on a wiring board, a method of applying an underfill adhesive composed of an epoxy resin between the wafer and the wiring substrate has been used to enhance the adhesion. The addition of such an underfill process improves the adhesion, but there is still a problem that the solder ball is dropped before the underfill process, and the process additionally incurs costs, and it is difficult to uniformly apply the epoxy resin between the wafer and the wiring substrate during the underfill process Problems exist.
Accordingly, the inventors of the present invention have made efforts to produce an epoxy flux paste composition superior in adhesion without adding an underfill process, having low thermal resistance, improved thermal conductivity, and viscosity control, It was possible.
Korean Patent No. 10-1163172, Korean Patent No. 10-1219754, US Patent No. 5128746, US Patent Publication No. 2002-0190370, US Patent Publication No. 2005-0028361, 2006-0060987 and US-A-2012-0002386 disclose an epoxy flux paste composition which can be used without addition of an underfill process, but it is confirmed that the composition and properties are completely different from those of the composition of the present invention.
It is an object of the present invention to provide an epoxy flux paste composition excellent in rigidity. Specifically, an object of the present invention is to provide a composition containing an epoxy resin, which has an epoxy flux paste composition having a viscosity of 10,000 to 30,000 cps, a haze value at room temperature of 0.7 to 1.0 and a haze value at a high temperature of 0.4 to 0.7 In order to solve the problem.
The present invention relates to an epoxy flux paste composition which comprises a composition containing an epoxy resin and has a viscosity of 10,000 to 30,000 cps and a shear value at normal temperature of 0.7 to 1.0 and a shear value at a high temperature of 0.4 to 0.7 .
The epoxy flux paste composition may include an epoxy resin, a curing agent, a reducing agent, a sizing agent, and a catalyst. Preferably, the curing agent is contained in an equivalent ratio of 0.2 to 0.4 based on the epoxy resin, and 5 to 15 parts by weight of a reducing agent, 10 to 30 parts by weight of a reducing agent, and 1 to 5 parts by weight of a catalyst may be included, based on 100 parts by weight of the curing agent .
The glass transition temperature of the epoxy flux paste composition may be from 61 to 99 占 폚.
In addition, when the epoxy flux paste composition is dispersed in a substrate, it can be encapsulated to a half height of the solder ball size.
The peak value can be measured by the following reaction formula 1 based on 0.5 to 1 rpm.
[Reaction Scheme 1]
Hereinafter, the present invention will be described in detail.
The present invention relates to an epoxy flux paste composition having a viscosity of 10,000 to 30,000 cps, a shear value at room temperature of 0.7 to 1.0, and a shear value at a high temperature of 0.4 to 0.7. The composition may include an epoxy resin, a curing agent, a reducing agent, a shrink agent, and a catalyst. As the epoxy resin, curing agent, reducing agent, chelating agent and catalyst, the following conditions may be used.
Examples of the epoxy resin include, but are not limited to, a bifunctional epoxy resin (DGEBA), a tri-glycidyl p-aminophenol (TGAP) And TGDDM (Tetra Glycidyl Diamine Diphenyl Methane).
Those which can be used as the curing agent are not particularly limited, but may preferably include at least one of an amine family material and an anhydride family material. The amine-based material may be one selected from the group consisting of meta-phenylene diamine (MPDA), diamino diphenyl methane (DDM), and diamino diphenyl sulfone (DDS) Or more species. The anhydride-based materials include 2-methyl-4-nitroaniline (MNA), DoDecenly succinic anhydride (DDSA), maleic anhydride (MA) Anhydride, succinic anhydride (SA), methyltetrahydrophthalic anhydride (MTHPA), hexahydrophthalic anhydride (HHPA), tetrahydrophthalic anhydride And at least one selected from the group consisting of THPA (tetrahydrophthalic anhydride) and pyromellitic dianhydride (PMDA).
Examples of the reducing agent that can be used as the reducing agent include, but are not limited to, glutaric acid, malic acid, azelaic acid, abietic acid, adipic acid, Ascorbic acid, acrylic acid, and citric acid may be selected from one or more selected from the group consisting of ascorbic acid, citric acid, and ascorbic acid.
As the above-mentioned pellets, there may be used, but not particularly limited to, hydrogenated castor wax (for example, thixotrol, carnauba wax, ethylene glycol, Polyglycols, polypropylene glycol, acrylate oligomers, glycerides, simethicone, tributyl phosphate, and silica compounds. And at least one selected from the group consisting of As the silica-based compound, dimethylsilicone or polydimethylsiloxane may be selected. The padding improves the printability of the epoxy flux paste composition and can reduce the surface tension of the epoxy flux paste composition.
Not particularly limited but ones which may be used as the catalyst, benzyldimethylamine (BDMA: Benzyl Amine DiMethly), BF 3 - monoethylamine (BF 3 -MEA: BF 3 -Mono Ethyl Amine), tris (dimethylaminomethyl) At least one selected from the group consisting of tris (dimethylaminomethyl) phenol (DMP-30), dimethylbenzenethracene (DMBA), and methylimidazole (MI).
In preparing the composition of the present invention, a diluent may be added. Those which can be used as the diluent are not particularly limited, but an organic solvent such as BDE (Brominated Diphenyl Ethers) may be preferably used.
According to one embodiment of the present invention, the composition of the present invention may further include at least one member selected from the group consisting of a coupling agent, a coating film smoothing agent, and a defoaming agent. The flow modifier or thickener may further include an auxiliary additive such as a flow modifier, a thickener, etc. The flow modifier or thickener is not particularly limited as long as it is a known one, and examples thereof include an acrylate polymer compound and a modified cellulose. The epoxy flux paste composition of the present invention may further comprise carbon nanotube-copper (CNT-Cu).
According to another aspect of the present invention, there is provided a method of manufacturing a wiring board, comprising: printing a composition of the present invention on a wiring board; Preparing an element substrate to which a solder ball is connected; And connecting a solder ball of the element substrate to the epoxy flux paste composition and heating the semiconductor element mounting method.
At this time, the epoxy flux paste composition of the present invention is melted at an appropriate temperature through heating, and has an active force. That is, after heating, a bump is formed while reaching the melting point of the solder, and curing is performed. The cured composition of the present invention improves the adhesion of the solder balls by wrapping around the substrate and the solder balls and discharges the heat between the substrates to the outside to increase the cooling efficiency of the module and its peripheral devices to lower the temperature inside, If it is applied to a product with many occurrences, it has an excellent heat radiation property. All the steps may be carried out in the atmosphere or in an inert gas atmosphere such as nitrogen, argon or helium.
In addition, the heating step may be performed at a temperature range of 110 to 200 DEG C in which the epoxy is subjected to a temporary curing step and has a minimum fluidity. If this is exceeded, the curing may proceed and affect void formation.
The viscosity of the epoxy flux paste composition required in the present invention is preferably in the range of 10,000 to 30,000 cps. If the viscosity is lower than 10,000, the solder ball may not be uniformly wrapped around the solder ball due to its high flowability after the solder ball is placed. If it is high, the slump in the actual process is not good, so that a uniform amount may not be formed on the substrate (printed circuit board or wafer).
In the epoxy flux paste composition required in the present invention, it is preferable that the curing agent relative to the epoxy resin is contained in an equivalent ratio of 0.2 to 0.4. If the curing agent is less than 0.2 equivalent ratio, the curing of the epoxy resin may not be smooth, and if the curing agent is more than 0.4 equivalent, properties capable of withstanding high temperature and high humidity may be deteriorated after the epoxy resin is cured.
In the epoxy flux paste composition required in the present invention, the reducing agent is preferably contained in an amount of 5 to 15 parts by weight based on 100 parts by weight of the curing agent. If the amount of the reducing agent is less than 5 parts by weight or exceeds 15 parts by weight, the surface of the solder ball may be oxidized or may not function as an epoxy flux paste composition.
The control of the viscosity and the shear value of the epoxy flux paste composition required in the present invention is more important than the content of the sheath added to the epoxy resin composition as well as the process control of mixing the sheath agent. The amount of the chelating agent is preferably 10 to 30 parts by weight relative to 100 parts by weight of the curing agent. If the amount of the chelating agent is less than 10 parts by weight or more than 30 parts by weight based on 100 parts by weight of the curing agent, it does not affect the control of the true value. In addition, in order to achieve the desired viscosity, the epoxy resin composition is added dropwise at a rate of 10 to 30 g / min while stirring the epoxy resin composition at a speed of 5 to 10 rpm to produce a mixed composition. More preferably 15 to 20 g / min. If the stirring speed or the dropping speed is too slow or too fast, the viscosity or the roughening of the composition required in the present invention can not be achieved.
In the epoxy flux paste composition required in the present invention, the catalyst is preferably contained in an amount of 1 to 5 parts by weight based on 100 parts by weight of the curing agent. If the catalyst is included in an amount of less than 1 part by weight or more than 5 parts by weight, the solder ball may not be encapsulated or bubbles may form in the composition abutting the solder ball surface.
The glass transition temperature of the epoxy flux paste composition may be from 61 to 99 占 폚. If the glass transition temperature is less than 61 ° C, the solder ball bonding strength value is low when the solder ball is placed on the substrate and the bonding strength is measured. When the glass transition temperature is higher than 99 ° C, the solder ball bonding strength is excellent, The epoxy resin may be cracked during an external impact such as an impact.
The epoxy flux paste composition of the present invention may have a shear value at room temperature of 0.7 to 1.0 and a shear value at high temperature of 0.4 to 0.7 at room temperature. The critical value is a property that the material does not fall on the pad after being transferred to the substrate through the pin-dipping, screen printing, or dispensing process, and is a value indicating the degree of maintaining the moldability up to a certain temperature. And the composition can be controlled at a constant height, so that the amount of the epoxy resin used in the subsequent bonding strength reinforcement can be reproducibly adjusted. Therefore, it is preferable that the peak value at room temperature is 0.7 to 1.0. On the other hand, if the temperature of the epoxy flux paste composition of the present invention is heated, the flowability of the epoxy flux paste composition increases, and if the root mean square value is not kept constant, the epoxy flux paste composition spreads too widely, Since it is not possible to control the amount of the composition participating in the bonding, it is important to adjust the haze value to 0.4 to 0.7 to maintain the reproducibility of the composition.
The high temperature at which the epoxy flux paste composition exhibits a haze value is preferably 65 to 95 占 폚, more preferably 70 to 90 占 폚, most preferably 80 占 폚, and the room temperature is preferably 15 to 35 占 폚 Preferably 20 to 30 < 0 > C, and most preferably 25 < 0 > C.
When the epoxy flux paste composition of the present invention is dispersed in a substrate, it can be encapsulated or wetted to the solder ball diameter 1/2 the height in the z-axis direction from the bottom of the solder balls, which is related to the critical value. That is, by lowering the surface energy of the material, the material is smoothly wetted onto the solder ball surface, and the solder ball height is more than 1/2 of the solder ball height.
More particularly, the present invention relates to a composition containing an epoxy resin having a viscosity of 10,000 to 30,000 cps, a haze value at room temperature of 0.7 to 1.0, Of the epoxy flux paste composition is 0.4 to 0.7. The use of the epoxy flux paste composition of the present invention can provide a semiconductor device mounting method capable of improving the adhesion and coating properties of the substrate and the solder ball as well as improving the process efficiency and manufacturing an electronic device having excellent electrical characteristics .
Hereinafter, preferred embodiments of the present invention will be described in detail. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.
≪ Examples 1 to 3 and Comparative Examples 1 to 4. Preparation of epoxy flux paste composition >
In order to prepare an epoxy flux paste composition, a bifunctional epoxy resin (DGEBA: DiGlycidyl Ether of Bisphenol of A) is used as an epoxy resin, Diamino Diphenyl Sulfone (DDS) is used as a curing agent, Chisso agent, polydimethylsiloxane, a catalyst is BF 3 - monoethylamine: a (BF 3 -MEA BF 3 -Mono ethyl amine), diluent brominated diphenyl ether was used (BDE brominated diphenyl ethers), each of the embodiments The components of the weight of Table 1 were prepared according to the composition conditions of the examples and comparative examples.
Condition
(Parts by weight)
(Parts by weight)
(Parts by weight)
(Parts by weight)
(Parts by weight)
Example 1
100 parts by weight of diaminodiphenylsulfone as a curing agent was added to 33 parts by weight of brominated diphenyl ether as a diluent and mixed at 130 DEG C for 20 minutes until all of the diaminodiphenylsulfone dissolved. The solution thus prepared was mixed at 25 ° C for 20 minutes at room temperature to uniformly mix the bifunctional epoxy resin. At this time, the curing agent was added in an amount of 0.3 equivalent ratio to the epoxy resin. To the mixture containing the bifunctional epoxy resin, 1 part by weight of BF 3 -monoethylamine as a catalyst at room temperature was added and mixed for 5 minutes. Then, 5 parts by weight of maleic acid as a reducing agent was added to the mixture containing the catalyst, followed by mixing for 5 minutes. In order to add 30 parts by weight of polydimethylsiloxane as a shrinking agent, maleic acid was added at a rate of 5 to 10 rpm And the above-mentioned pellets were added dropwise at a rate of 15 to 20 g / min while stirring to finally prepare the epoxy flux paste composition of the present invention.
Examples 2 and 3
An epoxy flux paste composition was prepared in the same manner as in Example 1 except that the weight of each component was added with reference to Table 1.
Comparative Example 1 and Comparative Example 2
An epoxy flux paste composition was prepared in the same manner as in Example 1 except that the weight of each component was added with reference to Comparative Example 1 and Comparative Example 2 in Table 1.
Comparative Example 3
An epoxy flux paste composition was prepared in the same manner as in Example 1 except that the weight of each component was added with reference to Comparative Example 3 in Table 1. In particular, in order to add polydimethylsiloxane, Was added dropwise at a rate of 5 g / min while stirring at a speed of 10 rpm to finally prepare the epoxy flux paste composition of the present invention.
Comparative Example 4
An epoxy flux paste composition was prepared in the same manner as in Example 1 except that the weight of each component was added with reference to Comparative Example 4 in Table 1, and in order to add polydimethylsiloxane, The above kneading agent was added dropwise at a rate of 15 g / min while stirring at a speed of 30 rpm to finally prepare the epoxy flux paste composition of the present invention.
≪ Test Example 1: Determination of the haze value of the epoxy flux paste composition and the state of encapsulation of the solder ball &
The haze values of the epoxy flux paste compositions of Examples 1 to 3 and Comparative Examples 1 to 4 were measured and it was confirmed whether or not the encapsulation of the solder balls occurred well in the semiconductor device. At this time, the peak value was measured at each corresponding temperature by the following reaction formula 1 based on 0.5 to 1 rpm.
[Reaction Scheme 1]
Referring to Table 2, it was confirmed that the epoxy flux paste compositions of Examples 1 to 3 had a roughening value of 0.7 to 1.0 at 25 ° C and a roughening value of 0.4 to 0.7 at 80 ° C. The epoxy flux paste compositions of Comparative Examples 1 to 4 had a haze value at 25 캜 similar to that of Examples 1 to 3, but had a haze value of 0.2 to 0.3 at 80 캜 and were used as an epoxy flux paste composition It could be expected that it was not appropriate. Actually, when the compositions of Examples 1 to 3 were used, although the solder ball encapsulation was good, it was confirmed that when the composition of Comparative Examples 1 to 4 was used, the phenomenon of bubble formation occurred without causing solder ball encapsulation. At this time, the viscosity of the epoxy flux paste composition of Examples 1 to 3 was 10,000 to 30,000 cps, and the viscosity of the compositions of Comparative Examples 1 to 4 was less than 10,000 cps or more than 30,000 cps.
Claims (6)
An epoxy resin, a curing agent, a reducing agent, a shrink agent and a catalyst,
Based on 100 parts by weight of the curing agent, 5 to 15 parts by weight of a reducing agent, 10 to 30 parts by weight of a curing agent, and 1 to 5 parts by weight of a catalyst, based on 100 parts by weight of the curing agent,
Wherein the glass transition temperature is from 61 to 99 占 폚.
Wherein the epoxy flux paste composition is encapsulated to a half height of the solder ball size upon dispersion of the epoxy flux paste composition on the substrate.
Wherein the peak value is measured by the following Reaction Formula 1 based on 0.5 to 1 rpm.
[Reaction Scheme 1]
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