KR101689344B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

Info

Publication number
KR101689344B1
KR101689344B1 KR1020150087505A KR20150087505A KR101689344B1 KR 101689344 B1 KR101689344 B1 KR 101689344B1 KR 1020150087505 A KR1020150087505 A KR 1020150087505A KR 20150087505 A KR20150087505 A KR 20150087505A KR 101689344 B1 KR101689344 B1 KR 101689344B1
Authority
KR
South Korea
Prior art keywords
layer
electrode
bonding
semiconductor
light emitting
Prior art date
Application number
KR1020150087505A
Other languages
Korean (ko)
Inventor
전수근
진근모
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Priority to KR1020150087505A priority Critical patent/KR101689344B1/en
Priority to PCT/KR2016/006547 priority patent/WO2016204594A1/en
Application granted granted Critical
Publication of KR101689344B1 publication Critical patent/KR101689344B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A semiconductor light emitting device includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, A plurality of semiconductor layers which are grown using a growth substrate and have an active layer which generates light through recombination of the semiconductor layers; A non-conductive reflective film coupled to the plurality of semiconductor layers at an opposite side of the growth substrate; And a bonding layer electrically connected to the plurality of semiconductor layers and formed on the nonconductive reflective layer, the bonding layer including at least one of Ni, Cu, NiAg, and Be bonded to the bonding material at the time of bonding, A light reflecting layer formed between the bonding layer and the non-conductive reflective layer, the light reflecting layer being formed in the active layer and reflecting light passing through the non-conductive reflective layer; , And an electrode including a diffusion preventing layer containing at least one of Ta, Mg, and Fe.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having an electrode structure with improved bonding strength in bonding.

Here, the semiconductor light emitting element means a semiconductor light emitting element that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting element. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 7,262,436.

The semiconductor light emitting device includes a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100, an active layer 400 grown on the n-type semiconductor layer 300, p An n-side bonding pad 800 formed on the n-type semiconductor layer 300 exposed by etching, electrodes 901, 902, and 903 functioning as a reflective film formed on the n-type semiconductor layer 500, the p-type semiconductor layer 500, .

A chip having such a structure, that is, a chip in which both the electrodes 901, 902, 903 and the electrode 800 are formed on one side of the substrate 100 and the electrodes 901, 902, 903 function as a reflection film, is called a flip chip. Electrodes 901,902 and 903 may be formed of a highly reflective electrode 901 (e.g., Ag), an electrode 903 (e.g., Au) for bonding, and an electrode 902 (not shown) to prevent diffusion between the electrode 901 material and the electrode 903 material. For example, Ni). Such a metal reflection film structure has a high reflectance and an advantage of current diffusion, but has a disadvantage of light absorption by a metal.

2 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913.

The semiconductor light emitting device includes a substrate 100, a buffer layer 200 grown on the substrate 100, an n-type semiconductor layer 300 grown on the buffer layer 200, an active layer 400 grown on the n-type semiconductor layer 300, A p-type semiconductor layer 500 formed on the active layer 400 and a p-type semiconductor layer 500 formed on the p-type semiconductor layer 500 and formed on the transparent conductive film 600, A bonding pad 700 and an n-side bonding pad 800 formed on the n-type semiconductor layer 300 exposed by etching. A DBR (Distributed Bragg Reflector) 900 and a metal reflection film 904 are provided on the transmissive conductive film 600. According to this structure, although the absorption of light by the metal reflection film 904 is reduced, the current diffusion is less smooth than that using the electrodes 901, 902, and 903.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer for generating light through recombination of electrons and holes, the semiconductor layers being grown using a growth substrate; A non-conductive reflective film coupled to the plurality of semiconductor layers at an opposite side of the growth substrate; A bonding layer electrically connected to the plurality of semiconductor layers and formed on the nonconductive reflective layer, the bonding layer including at least one of Ni, Cu, NiAg, and Be bonded to the bonding material at the time of bonding, A light reflecting layer formed between the bonding layer and the non-conductive reflective layer, the light reflecting layer being formed in the active layer and reflecting light passing through the non-conductive reflective layer; And an electrode including a diffusion preventing layer containing at least one of Ta, Mg, and Fe.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 7,262,436,
2 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913,
3 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same,
FIG. 4 is a view for explaining an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 3,
5 is an enlarged view of a portion R1 of the opening formed by the dry etching process,
6 is a view for explaining the top surface of the electrode subjected to the wet etching process,
7 is a view for explaining an electrical connection formed in the opening,
8 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same,
9 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same,
FIG. 10 is a view for explaining an example of a cross section taken along line AA in FIG. 9,
11 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same,
12 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same,
13 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
14 is a cross-sectional view taken along line AA of Fig. 13,
FIG. 15 is a cross-sectional view taken along line BB of FIG. 13,
16 is a view showing a state in which the p-side electrode, the n-side electrode, and the non-conductive reflective film are removed in the semiconductor light emitting device of Fig. 13,
17 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
18 is a cross-sectional view taken along line DD of Fig. 17,
19 is a cross-sectional view taken along line EE of Fig. 17,
20 is a view showing a state before two semiconductor light emitting devices are separated into independent semiconductor light emitting devices during a semiconductor light emitting device manufacturing process,
21 is a view illustrating a state in which two semiconductor light emitting devices are separated into independent semiconductor light emitting devices during a semiconductor light emitting device manufacturing process,
22 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
23 is a sectional view taken along the line A-A 'in FIG. 22,
24 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
25 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
26 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
27 is a view showing an example of a state in which the semiconductor light emitting element is fixed to the external electrode,
28 is a photograph showing a crack occurring in the semiconductor light emitting element bonded to the external electrode,
29 is a photograph showing the degree of spreading of liquid tin on gold,
30 is a view showing an example of an n-side electrode and / or a p-side electrode configuration according to the present disclosure,
31 is a photograph showing that the lower electrode layer is blown out when a long-time current is applied,
32 is a view showing a change in production yield depending on the thickness of an electrode or a bump according to the present disclosure,
33 is a view showing still another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure,
34 is a view showing still another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure,
35 is a graph showing DST results according to the thickness of the uppermost layer,
36 is a view showing still another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure
37 is a view showing still another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure
38 is a view showing still another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure
39 is a view showing another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure
40 is a view showing still another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure
41 is a view showing another example of the n-side electrode and / or the p-side electrode configuration according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

3 is a view for explaining an example of a semiconductor light emitting device and a method of manufacturing the same according to the present disclosure.

A method of manufacturing a semiconductor light emitting device, comprising the steps of: forming a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first and second semiconductor layers, A plurality of semiconductor layers having an active layer that generates light through recombination are formed on the substrate (S11). Thereafter, an electrode electrically connected to the first semiconductor layer or the second semiconductor layer is formed (S21). Next, a non-conductive film is formed to cover the electrode and to face the plurality of semiconductor layers and reflect light from the active layer (S31). Subsequently, an opening for exposing the electrode by the first etching process is formed in the process of forming the opening for electrical connection with the electrode in the non-conductive film (S41). Subsequently, the material formed on the upper surface of the electrode exposed by the opening by the second etching process is removed (S51). An electrical connection is formed in the opening in contact with the electrode (S61).

FIG. 4 is a view for explaining an example of a method of manufacturing the semiconductor light emitting device described in FIG. 3. FIG.

A buffer layer 20 is grown on a substrate 10 and an n-type semiconductor layer 30 (first semiconductor layer), an active layer 40, a p-type semiconductor layer 50; the second semiconductor layer) are sequentially grown (S11 in FIG. 3).

The substrate 10 is mainly made of sapphire, SiC, Si, GaN or the like, and the substrate 10 can be finally removed, and the buffer layer 20 can be omitted.

the p-type semiconductor layer 50 and the active layer 40 are mesa-etched to partially expose the n-type semiconductor layer. The order of the mesa etch can be changed.

The light absorption preventing portion 65 is formed on the p-type semiconductor layer corresponding to the electrode 93 to be formed in the subsequent process. The light absorption preventing portion 65 may be omitted. The light absorption preventing portion 65 is formed of a single layer (e.g., SiO 2 ), a multilayer film (e.g., SiO 2 / TiO 2 / SiO 2 ), a distributed Bragg reflector, A combination of a single layer and a distributed Bragg reflector, and the like. In addition, the light absorption preventing portion 65 may be made of a non-conductive material (e.g., a dielectric film such as SiO x , TiO x ).

It is preferable that the light transmitting conductive film 60 for current diffusion is formed on the p-type semiconductor layer 50 on the p-type semiconductor layer 50 while covering the light absorption preventing portion 65. For example, the transmissive conductive film 60 may be formed of a material such as ITO or Ni / Au.

Thereafter, the electrode 93 is formed on the transmissive conductive film 60 (S21 in Fig. 3). The electrode 93 is electrically connected to the p-type semiconductor layer 50 by the transmissive conductive film 60. An n-side bonding pad 80 for supplying electrons to the n-type semiconductor layer 30 on the exposed n-type semiconductor layer 30 may be formed together with the electrode 93. The n-side bonding pad 80 may be formed together with the reflective electrode 92 to be described later.

7) is directly connected to the transmissive conductive film 60, it is easy to form a good electrical contact between the reflective electrode 92 (see FIG. 7) and the transmissive conductive film 60 to be described later . In this example, the electrode 93 provides stable electrical contact between the transmissive conductive film 60 and the reflective electrode 92.

Subsequently, a non-conductive reflective film 91 covering the electrode 93 is formed as a non-conductive film (S31 in Fig. 3). The non-conductive reflective film 91 may also be formed on a part of the n-type semiconductor layer 30 and the n-side bonding pad 80 which are etched and exposed. The nonconductive reflective film 91 does not necessarily cover all the regions on the n-type semiconductor layer 30 and the p-type semiconductor layer 50. The non-conductive reflective film 91 preferably functions as a reflective film, and is preferably formed of a light transmitting material to prevent absorption of light. The non-conductive reflective film 91 may be formed of a translucent dielectric material such as, for example, SiO x , TiO x , Ta 2 O 5 , and MgF 2 . Since the non-conductive reflective film 91 has a refractive index lower than that of the p-type semiconductor layer 50 (e.g., GaN) in the case where the non-conductive reflective film 91 is made of SiO x , light having an incident angle equal to or greater than the critical angle is formed in the plurality of semiconductor layers 30, ) Side.

On the other hand, if the non-conductive reflective film 91 is made of a distributed Bragg reflector (DBR) (e.g., a combination of SiO 2 and TiO 2 ), a larger amount of light can be transmitted through the plurality of semiconductor layers 30, 50).

FIG. 5 is an enlarged view of a portion R2 of the opening formed by the dry etching process, and FIG. 6 is a view for explaining the top surface of the electrode subjected to the wet etching process.

Subsequently, an opening 102 for exposing a part of the electrode 93 is formed in the non-conductive reflective film 91 by the dry etching process (first etching process) (S41 in FIG. 3). For the dry etching process, a halogen gas (eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6, etc.) containing an F group as the etching gas may be used. The electrode 93 may comprise a plurality of layers. For example, the electrode 93 is formed on the contact layer 95 electrically connected to the p-type semiconductor layer 50, and on the anti-oxidation layer 98 and the anti-oxidation layer 98 formed on the contact layer 95 And an etching prevention layer 99. In this example, the electrode 93 includes a contact layer 95, a reflection layer 96, a diffusion prevention layer 97, an oxidation prevention layer 98, and an etching prevention layer 99 formed sequentially on the transparent conductive film 60.

The contact layer 95 is preferably made of a material that makes good electrical contact with the transparent conductive film 60. As the contact layer 95, materials such as Cr and Ti are mainly used, and Ni, TiW and the like can be used, and Al and Ag having good reflectivity can be used.

The reflective layer 96 may be made of a metal having a high reflectance (e.g., Ag, Al, or a combination thereof). The reflective layer 96 reflects light generated in the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50. The reflective layer 96 may be omitted.

The diffusion preventing layer 97 prevents the material forming the reflection layer 96 or the material forming the oxidation preventing layer 98 from diffusing into another layer. The diffusion preventive layer 97 may be made of at least one selected from Ti, Ni, Cr, W and TiW, and Al and Ag may be used when high reflectance is required.

The oxidation preventive layer 98 may be made of Au, Pt, or the like, and may be any material as long as it is exposed to the outside and does not oxidize in contact with oxygen. As the oxidation preventing layer 98, Au having good electric conductivity is mainly used.

The etch stop layer 99 is a layer exposed in the dry etching process for forming the openings 102, and in this example, the etch stop layer 99 is the top layer of the electrodes 93. When Au is used as the etch stopping layer 99, not only the bonding strength with the non-conductive reflective layer 91 is weak, but a part of Au may be damaged or damaged at the time of etching. Therefore, if the etch stopping layer 99 is made of a material such as Ni, W, TiW, Cr, Pd, or Mo instead of Au, the bonding strength with the non-conductive reflective film 91 can be maintained and reliability can be improved.

On the other hand, in the dry etching process, the etch stop layer 99 protects the electrode 93, and in particular, prevents the oxidation preventive layer 98 from being damaged. For the dry etching process, a halogen gas (eg, CF 4 , C 2 F 6 , C 3 F 8 , or SF 6 ) containing an F group may be used as an etching gas. Therefore, in order to prevent damage to the oxidation preventing layer 98, it is preferable that the etching preventing layer 99 is made of a material having an excellent etching selectivity in this dry etching process. If the etch selectivity ratio of the etch stopping layer 99 is poor, the oxidation preventive layer 98 may be damaged or damaged in the dry etching process. Therefore, Cr or Ni is suitable as the material of the etch stopping layer 99 from the viewpoint of etching selectivity. The Ni or Cr reacts with the etching gas in the dry etching process or does not react with the etching gas, and protects the electrode 93 because it is not etched.

On the other hand, in the dry etching process for forming the openings 102, a material 107 such as an insulating material or an impurity may be formed on the upper portion of the electrode 93 due to the etching gas. For example, the halogen etch gas including the F group may react with the upper layer metal of the electrode to form the material 107. For example, at least some of Ni, W, TiW, Cr, Pd, Mo, etc. as the material of the etch stop layer 99 react with the etching gas in the dry etching process to form a material 107 (Fig. For example, NiF) may be formed. The material 107 thus formed may cause a decrease in the electrical characteristics of the semiconductor light emitting device (for example, an increase in the operating voltage). A part of Ni, W, TiW, Cr, Pd, or Mo as a material of the etch stopping layer 99 reacts with the etching gas to form a very small amount of material. It is preferable that a material is inhibited or a small amount is formed. From this point of view, Cr is more suitable for the material of the etch stopping layer 99 than Ni.

In this embodiment, the upper layer of the electrode 93, that is, the portion corresponding to the opening 102 of the etching prevention layer 99 is removed by a wet etching process (second etching process) The antioxidant layer 98 corresponding to the opening 102 is exposed. The material 107 is etched away together with the etch stop layer 99. Thus, removal of the material 107 improves electrical contact between the electrode 93 and the electrical connection 94 (see FIG. 7) and prevents the electrical characteristics of the semiconductor light emitting device from degrading.

On the other hand, the first etching process may be performed by wet etching to form the opening 102. In this case, HF, BOE, NH 3 , HCl, and the like may be used alone or in combination of appropriate concentrations as the etchant of the non-conductive reflective film 91. It is preferable that the etch selectivity ratio of the etch stopping layer 99 is excellent for protecting the antioxidant layer 98 when the openings 102 are formed in the wet etching process in the nonconductive reflective film 91 as in the dry etching process described above . From this viewpoint, Cr is suitable as the material of the etching preventive layer 99. Thereafter, the etch stop layer 99 corresponding to the opening 102 may be removed by another subsequent wet etching process (second etching process).

The etch stopping layer 99 having a good bonding strength with the nonconductive reflective film 91 is formed at a portion other than the opening 102 by the step of forming the opening 102 and the step of removing the etching preventing layer 99 corresponding to the opening 102. [ The electrode 93 has the same structure as the sequentially stacked Cr (contact layer) / Al (reflection layer) / Ni (diffusion prevention layer) / Au (oxidation prevention layer) / Cr (etching prevention layer). The etching stopper layer 99 is removed in order to prevent deterioration of electrical characteristics in the opening 102 of the electrode 93. For example, Cr (contact layer) / Al (reflective layer) / Ni (diffusion barrier layer) / Au (antioxidant layer), and the antioxidant layer 98 and the electrical connection 94 described later can be in contact with each other.

6, it is also possible to consider that only a part of the thickness of the etching preventive layer 99 at the portion corresponding to the opening 102 is wet-etched to leave a part of the etching preventive layer 99, and a material concentrated on the upper surface of the etching preventive layer Can be removed.

7 is a view for explaining an electrical connection formed in the opening.

Subsequently, as shown in Fig. 7, an electrical connection 94 is formed in the opening 102 to contact the electrode 93 (S61 in Fig. 3). The electrical connection 94 may be formed such that the electrical connection 94 is in contact with the oxidation resistant layer 98 exposed in the opening 102.

Thereafter, the reflective electrode 92 contacting the electrical connection 94 may be formed on the non-conductive reflective film 91 using a metal such as Al or Ag having high reflectance. For example, the process of forming the reflective electrode 92 may be a deposition or plating method. On the other hand, the reflective electrode 92 and the electrical connection 94 may be formed together but not separately. For example, in the process of forming the reflective electrode 92, the opening 102 is filled and an electrical connection 94 is formed. For stable electrical contact, the reflective electrode 92 may be formed using Cr, Ti, Ni, or an alloy thereof. The reflective electrode 92 is electrically connected to the outside to supply holes to the p-type semiconductor layer 50, and reflects light that is not reflected by the non-conductive reflective film 91.

When the substrate 10 is removed or has conductivity, the n-side bonding pad 80 may be formed on the side of the n-type semiconductor layer 30 from which the substrate 10 is removed or the side of the conductive substrate. The positions of the n-type semiconductor layer 30 and the p-type semiconductor layer 50 can be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device. Each semiconductor layer 20, 30, 40, 50 may be composed of multiple layers, and additional layers may be provided.

The electrode 93, the n-side bonding pad 80, and the reflective electrode 92 may be formed to have a branch for current diffusion. The n-side bonding pad 80 may have a height enough to be coupled to the package by using a separate bump, or may be deposited to a height sufficient to bond itself to the package as shown in FIG.

According to such a method for manufacturing a semiconductor light emitting device, the material 199 is removed between the electrode 93 and the electrical connection 94, thereby preventing a deterioration in electrical characteristics of the semiconductor light emitting device.

In addition, a semiconductor light emitting device having an electrode 93 having a good bonding strength with the non-conductive reflective film 91 and making good electrical contact with the electrical connection 94 can be manufactured.

8 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same.

The manufacturing method of the semiconductor light emitting device is substantially the same as the manufacturing method of the semiconductor light emitting device described with reference to FIGS. 3 to 7 except that the electrode 93 is provided with the reflective layer 96 and the diffusion preventing layer 97, So that redundant description will be omitted.

The electrode 93 includes a contact layer 95 formed on the light-transmitting conductive film 60, a reflection layer 96 and a diffusion preventing layer 97 repeatedly stacked on the contact layer 95, an oxidation preventing layer 98 formed on the diffusion preventing layer 97 And an anti-etching layer 99 formed on the anti-oxidation layer 98 and in contact with the non-conductive reflective layer 91. The etch stop layer 99 corresponding to the opening is removed to expose the antioxidant layer 98 and the electrical connection 94 to contact the antioxidant layer 98.

For example, the reflective layer 96 / diffusion barrier layer 97 may be formed of Al / Ni / Al / Ni / Al / Ni. When a large number of electrical connections 94 between the electrode 93 and the p-side bonding pad are formed, the area of the electrode 94 may be increased. As a result, the prevention of light absorption by the electrode 93 can be more important, and the reflective layer 96 becomes important. The reflective layer 96 having a high thickness may cause various problems such as the breakage of the Al layer. Therefore, when the reflective layer 96 and the diffusion preventing layer 97 are repeatedly stacked as in this example, Can be removed to provide good electrical contact, and the reflectivity can be improved to prevent the problem.

FIG. 9 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure and a method for manufacturing the same, and FIG. 10 is a view for explaining an example of a cross section cut along the line A-A in FIG.

The method of manufacturing a semiconductor light emitting device can also be applied to a large area semiconductor light emitting device. A method of manufacturing a semiconductor light emitting device includes a step of forming a plurality of openings and a plurality of electrical connections 94 and a step of forming a nonconductive reflective film 91 on the dielectric film 91b, and is substantially the same as the method of manufacturing the semiconductor light-emitting device described in Figs. 3 to 7, except that consisting of (a DBR with a combination of SiO 2 and TiO 2 91a;::; DBR example distributed Bragg reflector) and distributed Bragg reflector Therefore, redundant description will be omitted.

Since the non-conductive reflective film 91 includes the distributed Bragg reflector, a larger amount of light can be reflected to the side of the plurality of semiconductor layers 30, 40 and 50.

In the case of the dielectric film 91b, SiO 2 is suitable as the material, and the thickness is suitably from 0.2 탆 to 1.0 탆. The dielectric film 91b made of SiO 2 is preferably formed by CVD (Chemical Vapor Deposition), in particular, plasma enhanced CVD (PECVD).

In the case of the distributed Bragg reflector 91a, when composed of TiO 2 / SiO 2 , each layer is designed to have an optical thickness of 1/4 of a given wavelength, the number of which is 4 to 20 pairs Do. The distribution Bragg reflector 91a is preferably formed by physical vapor deposition (PVD), in particular by E-Beam Evaporation, sputtering or thermal evaporation.

An additional dielectric film may be formed on the distributed Bragg reflector 91a before the reflection electrode 92 is formed. The dielectric film 91b, the distributed Bragg reflector 91a, and the additional dielectric film form a light guide structure.

A plurality of electrical connections 94 between the electrode 93 and the p-side reflective electrode 92 are formed for current diffusion. Therefore, in the dry etching process for forming a plurality of openings in the non-conductive reflective film 91, a material can be formed on the upper surface of the electrode 93 exposed as a plurality of openings.

By the wet etching process, the material is removed from the upper layer of the electrode 93, for example, the portion corresponding to the opening together with the etching prevention layer. An electrical connection 94 is then formed in the plurality of openings. Therefore, deterioration of the electrical characteristics of the large area semiconductor light emitting device is prevented.

11 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same.

The method of manufacturing a semiconductor light emitting device is characterized in that the n-side bonding pad 80 is formed on the nonconductive reflective film 91 and the electrical connection 82 of the n-side bonding pad 80 and the n- And the manufacturing method of the semiconductor light emitting device described with reference to FIGS. 3 to 7 except that the heat dissipation and reflective electrode 108 is provided. Therefore, a duplicated description will be omitted.

Openings are formed to expose portions of the electrode 793 and the n-side branch electrode 781 in the dry etching process for forming the openings. Accordingly, the n-side branch electrode 81 may be formed with a material such as an insulating material or an impurity on the upper surface in the same manner as the electrode 93.

The material on the upper surface of the electrode 93 and the n-side branch electrode 81 exposed to the openings by the subsequent wet etching process can be removed together with the etch stop layer. Thereafter, electrical connections 94 and 82 are formed. The electrical connections 94 and 82 may be formed so as to contact the oxidation prevention layer of the exposed electrode 93 and the n-side branch electrode 81 by removing the etch stop layer. the p-side bonding pad 92 and the n-side bonding pad 80 are electrically connected to the p-type semiconductor layer 50 and the n-type semiconductor layer 30 through the electrical connections 94 and 82, respectively.

12 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure and a method for manufacturing the same.

The method of manufacturing a semiconductor light emitting device is characterized in that a light transmitting conductive film and a light absorption preventing portion are omitted and the electrode 93 is formed on the p-type semiconductor layer 50 so as to function as a reflective film and a current diffusion conductive film, , and an n-side branch electrode 81 are further included, so that a duplicate description will be omitted.

The electrode 93 has a reflective layer 96 formed of a material having a high reflectance such as Ag or Al and the reflective layer 96 also functions as a p-type semiconductor layer 50 and an ohmic contact layer. The electrode 93 is provided on the reflective layer 96 with an etch stopping layer 99 formed of a material having good bonding strength with the non-conductive film 91. For example, the electrode 93 may include an anti-etching layer 93b made of a material such as Ni, W, TiW, Cr, Pd or Mo on a reflective layer 93a such as an Ag layer or an Al layer. The etch stopping layer 99 may be formed entirely on the Ag layer or the Al layer, or may be formed only on the portion corresponding to the opening. It is preferable that the etching preventive layer 99 is selected in consideration of the fact that the etching selectivity ratio in the dry etching process for forming the openings should be good and the smaller the formation of the material such as the insulating material or the impurity does not react with the etching gas, From this viewpoint, Cr or Ni is suitable.

In this example, the dielectric film 91 is formed as a non-conductive film. The dielectric film 91 can be formed, for example, a translucent dielectric material such as SiO x, TiO x, Ta 2 O 5, MgF 2.

An opening is formed in the dielectric film 91 by a dry etching process. A material such as an insulating material or an impurity may be formed on the upper surface of the electrode 93 in the dry etching process for forming the opening. Subsequently, the material is removed by a wet etching process. During the removal of the material by the wet etching process, at least a portion of the electrode 93, for example, at least a portion of the etch stop layer 99 corresponding to the opening, may be removed. An electrical connection 94 is formed in the opening. Therefore, an increase in the operating voltage of the semiconductor light emitting device due to the material is prevented.

13 is a cross-sectional view taken along line AA of FIG. 13, FIG. 15 is a cross-sectional view taken along line BB of FIG. 13, and FIG. 13 is a view showing a state in which the p-side electrode, the n-side electrode, and the non-conductive reflective film are removed in the semiconductor light emitting device of Fig.

The semiconductor light emitting element 1 is grown on the substrate 10, the buffer layer 20 grown on the substrate 10, the n-type semiconductor layer 30 grown on the buffer layer 20 and the n-type semiconductor layer 30, An active layer 40 for generating light through recombination of holes and a p-type semiconductor layer 50 grown on the active layer 40.

The substrate 10 is mainly made of sapphire, SiC, Si, GaN or the like, and the substrate 10 can be finally removed, and the buffer layer 20 can be omitted. The n-side electrode 80 may be formed on the side of the n-type semiconductor layer 30 from which the substrate 10 is removed or the side of the conductive substrate 10 when the substrate 10 is removed or has conductivity. The positions of the n-type semiconductor layer 30 and the p-type semiconductor layer 50 can be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device. Each semiconductor layer 20, 30, 40, 50 may be composed of multiple layers, and additional layers may be provided.

Two n-side contact regions 31 are formed in which the p-type semiconductor layer 50 and the active layer 40 are partially removed through the mesa etching process to expose the n-type semiconductor layer 30, The n-side branched electrode 81 is formed on the n-type semiconductor layer 30 in the n-type semiconductor layer 31. The n-side contact region 31 is elongated so as to be parallel to one side surface (C) of the semiconductor light emitting element. Although the n-side contact region 31 may be opened in the lateral direction of the semiconductor light emitting device, it is preferable that the n-side contact region 31 is not opened to any one side but is surrounded by the active layer 40 and the p- . the number of the n-side contact regions 31 can be increased or decreased, and the arrangement form can be changed. The n-side branch electrode 81 preferably has a branch portion 88 extending long and a connecting portion 89 formed at one end of the branch portion 88 to have a wide width. The n-side contact region 31 is formed to have a narrow width at the portion where the branch portion 88 of the n-side branch electrode 81 is located and the connection portion 89 of the n-side branch electrode 81 is located at the position In the width direction.

Three p-side branch electrodes 93 are formed on the p-type semiconductor layer 50. The p-side branch electrodes 93 are formed in parallel with the n-side branch electrodes 81, and are arranged between the two n-side branch electrodes 81 and on both sides, respectively. Therefore, the n-side branch electrodes 81 are positioned between the three p-side branch electrodes 93, respectively. The p-side branch electrode 93 also has a branch portion 98 extending elongated and a connecting portion 99 formed at one end of the branch portion 98 to have a wide width. 13, the connecting portion 99 of the p-side branch electrode 93 is located on the side opposite to the connecting portion 89 of the n-side branched electrode 81 when viewed from above. That is, the connection portion 99 of the p-side branch electrode 93 is located on the left side and the connection portion 89 of the n side branch electrode 81 is located on the right side. The p-side branch electrode (93) extends along the direction of one side (C) of the semiconductor light emitting element. For example, in FIG. 13 and FIG. 16, they are elongated from left to right. When the device is turned upside down by a plurality of p-side branch electrodes 93 extending so long, it can be placed without tilting when placed on a mounting portion (e.g., a submount, a package, or a COB (Chip on Board)). From this point of view, the p-side branch electrode 93 is preferably formed as long as possible.

The height of the p-side branch electrode 93 and the n-side branch electrode 81 is preferably from 2 [mu] m to 3 [mu] m. Too thin a thickness causes an increase in the operating voltage, while an excessively thick branch electrode can cause process stability and material cost increase.

Preferably, a light absorption prevention film 95 is formed on the p-type semiconductor layer 50 below the p-side branch electrode 93 prior to formation of the p-side branch electrode 93. The light absorption prevention film 95 is formed to have a slightly wider width than the p-side branch electrode 93. The light absorption prevention film 95 prevents light generated in the active layer 40 from being absorbed by the p-side branch electrode 93. The light absorption preventing film 95 may have a function of reflecting a part or all of the light generated in the active layer 40 and the current from the p side branch electrode 93 flows just below the p side branch electrode 93 It may have only the function of preventing it, and both functions may be carried out. For these functions, the light absorbing film 95 is a single layer of a p-type semiconductor layer 50, the low light-transmissive material than the refractive index (for example: SiO 2) or multiple layers (for example: Si0 2 / TiO 2 / SiO 2) , Or a distributed Bragg reflector, or a combination of a single layer and a distributed Bragg reflector, and the like. In addition, the light absorption preventing film 95 may be made of a non-conductive material (e.g., a dielectric material such as SiO x , TiO x ). The thickness of the light absorption preventing film 95 is suitably from 0.2 to 3.0 μm, depending on the structure. If the thickness of the light absorption preventing film 95 is too small, the function is weak. If the thickness is too large, deposition of the light transmitting conductive film 60 formed on the light absorption preventing film 95 may be difficult. The light absorption preventing film 95 does not necessarily need to be made of a light transmitting material, and it is not necessarily made of a non-conductive material. However, by using a translucent dielectric material, the effect can be further enhanced.

The transmissive conductive film 60 is formed on the p-type semiconductor layer 50 before the p-side branch electrode 93 is formed subsequent to the formation of the light absorption prevention film 95. [ The transmissive conductive film 60 is formed so as to cover almost all of the p-type semiconductor layer 50 except for the n-side contact region 31 formed through the mesa etching process. Therefore, the light absorption preventing film 95 is placed between the light transmissive conductive film 60 and the p-type semiconductor layer 50. In particular, in the case of p-type GaN, the current diffusion ability is lowered. In the case where the p-type semiconductor layer 50 is made of GaN, most of the light transmitting conductive film 60 should be assisted. For example, a material such as ITO, Ni / Au may be used as the translucent conductive film 60. The above-described p-side branch electrode 93 is formed on the translucent conductive film 60 on which the light absorption barrier film 95 is formed, following the formation of the translucent conductive film 60.

After the n-side branch electrode 81 and the p-side branch electrode 93 are formed, the p-type semiconductor layer (including the n-side branch electrode 31 and the p- The non-conductive reflective film 91 is formed so as to cover the entirety of the non-conductive reflective film 50. The non-conductive reflective film 91 serves to reflect light from the active layer 40 toward the substrate 10 used for growth or toward the n-type semiconductor layer 30 when the substrate 10 is removed. The nonconductive reflective film 91 preferably covers the exposed side of the active layer 40 and the p-type semiconductor layer 50 connecting the upper surface of the p-type semiconductor layer 50 and the upper surface of the n-side contact region 31 Do. However, it should be understood by those skilled in the art that the non-conductive reflective film 91 does not necessarily cover all the regions on the n-type semiconductor layer 30 and the p-type semiconductor layer 50 exposed by etching on the opposite side of the substrate 10 .

Non-conductive reflective film 91, but functions as a reflection film, and preferably made of a translucent material so as to prevent the absorption of light, for example, a translucent dielectric material such as SiO x, TiO x, Ta 2 O 5, MgF 2 Lt; / RTI > The non-conductive reflective film 91 may be formed of a single dielectric film made of a light transmitting dielectric material such as SiO x or the like, for example, a single distributed Bragg reflector in combination of SiO 2 and TiO 2 , a plurality of different dielectric films or dielectrics A combination of a film and a distributed Bragg reflector, and may be formed to have a thickness of 3 to 8 袖 m, for example. Since the dielectric film has a lower refractive index than that of the p-type semiconductor layer 50 (for example, GaN), it is possible to partially reflect the light with a critical angle or more toward the substrate 10, and the distributed Bragg reflector emits a larger amount of light to the substrate 10, And it is possible to design a specific wavelength so that it can be effectively reflected according to the wavelength of generated light.

Preferably, as shown in Figs. 14 and 15, the non-conductive reflective film 91 has a double structure consisting of the distributed Bragg reflector 91a and the dielectric film 91b. By forming the dielectric film 91b having a certain thickness prior to the deposition of the distribution Bragg reflector 91a requiring precision, it is possible to stably manufacture the distribution Bragg reflector 91a and also to help the reflection of light have.

In forming the semiconductor light emitting device according to the present disclosure, a step is formed by a mesa etching for forming the n-side contact region 31, and a stepped portion such as the p-side branch electrode 93 or the n- It is necessary to form a hole in the non-conductive reflective film 91 as described in detail below even after the non-conductive reflective film 91 is formed, so that the dielectric film 91b is formed You need to pay particular attention when.

SiO 2 is suitable as the material of the dielectric film 91b, and its thickness is preferably 0.2 um to 1.0 um. If the thickness of the dielectric film 91b is too thin, it may be insufficient to sufficiently cover the n-side branch electrode 81 and the p-side branch electrode 93 having a height of about 2 탆 to 3 탆. If the thickness is too thick, It may become a burden on the hole forming process. The thickness of the dielectric film 91b may then be thicker than the thickness of the subsequent distributed Bragg deflector 91a. Further, the dielectric film 91b needs to be formed by a method that is more suitable for ensuring reliability of the device. For example, the dielectric film 91b made of SiO 2 is preferably formed by CVD (Chemical Vapor Deposition), in particular, plasma enhanced chemical vapor deposition (PECVD). A step is formed by forming the n-side contact region 31, the p-side branch electrode 93, and the n-side branch electrode 81 formed by the mesa etching, and the step coverage is covered by the chemical vapor phase This is because the evaporation method is more advantageous than physical vapor deposition (PVD) such as electron beam evaporation (E-Beam Evaporation). Specifically, when the dielectric film 91b is formed by E-Beam Evaporation, the side surface of the p-side branch electrode 93 and the n-side branch electrode 81 having stepped portions, The p-side branch electrode 93 and the n-side branch electrode 81 can be formed on the stepped surface in the same manner as the first embodiment except that the dielectric film 91b is formed thinly on the stepped surface, The dielectric film 91b is formed by chemical vapor deposition (CVD) for reliable insulation, because a short may occur between the electrodes when placed under the p-side electrode 92 and the n-side electrode 80 as shown in FIG. . Therefore, it is possible to secure the function as the nonconductive reflective film 91 while ensuring the reliability of the semiconductor light emitting element.

The distributed Bragg reflector 91a is formed on the dielectric film 91b to form the non-conductive reflective film 91 together with the dielectric film 91b. For example, the distributed Bragg reflector 91a having a repetitive lamination structure composed of a combination of TiO 2 / SiO 2 can be formed by physical vapor deposition (PVD), in particular, E-Beam Evaporation or Sputtering ) Or thermal evaporation (thermal evaporation). When the distributed Bragg reflector 91a is composed of a combination of TiO 2 / SiO 2 , each layer is designed to have an optical thickness of 1/4 of a given wavelength, the number of which is 4 to 20 pairs Suitable. If the number of combinations is too small, the reflection efficiency of the distributed Bragg reflector 91a is lowered, and if the number of combinations is too large, the thickness becomes excessively thick.

The p-side branch electrode 93 and the n-side branch electrode 81 are completely covered by the non-conductive reflective film 91 due to the formation of the non-conductive reflective film 91. the non-conductive reflective film 91 is formed so as to be in electrical communication with the p-side branch electrode 93 and the n-side branched electrode 81, which will be described below, with the p-side electrode 92 and the n- A through hole is formed and an electrical connection (94, 82) in the form of an electrode material filled in the hole is formed. Such holes are preferably formed by dry etching or wet etching, or a combination of both. Since the branch portions 98 and 88 of the p side branch electrode 93 and the n side branch electrode 81 are formed to have a narrow width, the electrical connection 94 is formed between the p side branch electrode 93 and the n- (99, 89) of the first connector (81). If there is no p-side branch electrode 93, a large number of electrical connections 94 should be formed to directly connect to the transparent conductive film 60 provided on almost the entire surface of the p-type semiconductor layer 50, Side contact region 31 and the n-side electrode 80 and the n-side contact region 31 are connected to each other by a large number of electrical connections 82, -Type semiconductor layer 30, it also causes many problems in the manufacturing process. The present embodiment is characterized in that the n-side branch electrode 81 is formed on the n-side contact region 31 and the p-side branch electrode 93 is formed on the p-type semiconductor layer 50 Is formed on the translucent conductive film 60 and then subjected to a heat treatment, thereby making it possible to make stable electrical contact therebetween.

It is preferable that the p-side electrode 92 and the n-side electrode 80 are formed on the non-conductive reflective film 91 following the formation of the electrical connections 94 and 82. the p-side electrode 92 and the n-side electrode 80 are formed so as to cover all or almost all of the non-conductive reflective film 91 from the viewpoint of helping to reflect light from the active layer 40 toward the substrate 10. [ And is formed over a large area to serve as a conductive reflective film. It is preferable that the p-side electrode 92 and the n-side electrode 80 are spaced apart from each other on the non-conductive reflective film 91 in order to prevent short-circuiting, 92 or the portion not covered with the n-side electrode 80 exists. The p-side electrode 92 and the n-side electrode 80 are preferably made of Al, Ag or the like having good reflectivity. However, in order to make stable electrical contact, materials such as Cr, Ti, Ni, Au, , Al, Ag or the like is preferably used. The p-side electrode 92 and the n-side electrode 80 function to supply current to the p-side branch electrode 93 and the n-side branch electrode 81, to connect the semiconductor light emitting element to an external device, And performs a function of reflecting light from the active layer 40 and / or a heat dissipation function. Since the p-side electrode 92 and the n-side electrode 80 are both formed on the non-conductive reflective film 91, the height difference between the p-side electrode 92 side and the n-side electrode 80 side is minimized, The advantage is obtained when the semiconductor light emitting device according to the present disclosure is coupled to a mount (e.g., submount, package, COB). This advantage is particularly large when using a combination of eutectic bonding methods.

As the p-side electrode 92 and the n-side electrode 80 are formed on the non-conductive reflective film 91 in this manner, the p-side branch electrode 93 and the n-side branch electrode 81 are all formed of the non- And the n-side branch electrodes 81 extend below the n-side electrode 80 lying on the non-conductive reflective film 91. The n-side branched electrodes 81 are disposed under the non-conductive reflective film 91 Side electrode 92 lying on top of the p-side electrode 91. The p- the presence of the non-conductive reflective film 91 between the p-side electrode 92 and the n-side electrode 80 and the p-side branch electrode 93 and the n-side branched electrode 81 causes the electrodes 92, Shorting between the electrodes 93 and 81 is prevented. Further, by introducing the p-side branch electrode 93 and the n-side branch electrode 81 as described above, current can be supplied to the semiconductor layer region which is required without any restriction in constituting the flip chip.

In general, the p-side electrode 92, the n-side electrode 80, the p-side branch electrode 93, and the n-side branch electrode 81 are formed of a plurality of metal layers. In the case of the p-side branch electrode 93, the lowest layer should have a high bonding force with the transparent conductive film 60, and materials such as Cr and Ti are mainly used. Ni, Ti, TiW and the like may also be used. It should be noted that a person skilled in the art can use Al, Ag or the like having high reflectance also in the p-side branch electrode 93 and the n-side branch electrode 81. In the case of the p-side electrode 92 and the n-side electrode 80, Au is used as the uppermost layer for wire bonding or connection with an external electrode. When Ni, Ti, TiW, W or the like is used in accordance with the required specification between the lowest and the uppermost layers in order to reduce the amount of Au and to complement the characteristics of Au, , Al, Ag and the like are used. In this disclosure, the p-side branch electrode 93 and the n-side branch electrode 81 should be electrically connected to the electrical connections 94 and 82, so that Au may be considered as the uppermost layer. However, the present inventors have found that it is not suitable to use Au as the uppermost layer of the p-side branch electrode 93 and the n-side branch electrode 81. There is a problem in that when the non-conductive reflective film 91 is deposited on Au, the bonding force between the two is weak, so that it easily peels off. In order to solve such a problem, if the uppermost layer of the branch electrodes is made of a material such as Ni, Ti, W, TiW, Cr, Pd, or Mo instead of Au, the adhesive force to the non-conductive reflective film 91 to be deposited is maintained So that the reliability can be improved. In addition, in the process of forming holes for the electrical connection 94 in the non-conductive reflective film 91, the above metal is sufficient to serve as a diffusion barrier to help ensure the stability of the subsequent processes and electrical connections 94, .

17 is a cross-sectional view taken along the line D-D in FIG. 17, and FIG. 19 is a cross-sectional view taken along the line E-E in FIG.

18 and 19, the non-conductive reflective film 91 includes a distributed Bragg reflector 91a in addition to the dielectric film 91b and the distributed Bragg reflector 91a. In the semiconductor light- And a clad film 91f formed on the substrate. A large part of the light generated in the active layer 40 is reflected toward the n-type semiconductor layer 30 side by the dielectric film 91b and the distributed Bragg reflector 91a while the dielectric film 91b and the distributed Bragg reflector 91a are also constant A part of the light is trapped inside thereof or is discharged through the dielectric film 91b and the side surface of the distribution Bragg reflector 91a. The present inventors have analyzed the relationship between the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91f from the viewpoint of an optical waveguide. The optical waveguide is a structure for guiding light by surrounding the propagating portion of the light with a material having a lower refractive index than that of the light guiding portion. From this point of view, when the distributed Bragg reflector 91a is regarded as a propagation portion, the dielectric film 91b and the clad film 91f can be seen as a part of the configuration surrounding the propagation portion. Distributed Bragg reflector (91a) has a case consisting of a SiO 2 / TiO 2, in which the refractive index of SiO 2 is 1.46, is another effective refractive index (where the effective refractive index of the because the refractive index of TiO 2 is 2.4, distributed Bragg reflector (91a) Means an equivalent refractive index of light capable of traveling in a waveguide made of materials having different refractive indexes and has a value between 1,46 and 2.4). In the case of the dielectric film 91b made of SiO 2 , the refractive index . The clad film 91f is also made of a material lower than the effective refractive index of the distributed Bragg reflector 91a. Preferably, the clad film 91f has a thickness of? / 4n to 3.0um (where? Is the wavelength of light generated in the active layer 40 and n is the wavelength of the material of the clad film 91f) Refractive index). For example, the clad film 91f may be formed of SiO 2 , which is a dielectric having a refractive index of 1.46. the thickness can be 4500/4 * 1.46 = 771A or more when? is 450 nm (4500 A). Considering that the uppermost layer of the distributed Bragg diffractor 91a composed of a large number of pairs of SiO 2 / TiO 2 can be made of an SiO 2 layer having a thickness of? / 4n, the clad film 91f is positioned below Is preferably thicker than lambda / 4n so as to be differentiated from the uppermost layer of the distribution Bragg deformer 91a. In addition to being burdensome to the subsequent hole forming process, the thickness increase does not contribute to the improvement of the efficiency, It is not preferable that the thickness is too thick to be more than um, but it is not impossible in some cases to be formed to be not less than 3.0um. When the distributed Bragg reflector 91a is in direct contact with the p-side electrode 92 and the n-side electrode 80, a part of the light traveling through the distributed Bragg reflector 91a contacts the p-side electrode 92 and the n- Side electrode 80 and the distributed Bragg reflector 91a may be absorbed while being influenced by the waveguide 80. In this case, a clad film having a lower refractive index than the distributed Bragg reflector 91a It is possible to minimize the absorption of a part of the light traveling through the distributed Bragg reflector 91a by the p-side electrode 92 and the n-side electrode 80, . Therefore, in general, the thickness of the clad film 91f should be equal to or larger than the thickness corresponding to the wavelength of light, so that the thickness of the clad film 91f is preferably? / 4n or more. However, if the refractive index difference between the distributed Bragg reflector 91a and the clad film 91f is large, the light can be confined more strongly by the distributed Bragg reflector 91a, so that the clad film 91f having a thin thickness can be used. If the difference in the refractive index is small, the thickness of the clad film 91f must be sufficiently thick to obtain the above-mentioned effect. Therefore, the thickness of the clad film 91f should be sufficiently considered as to what the difference between the refractive index of the material constituting the clad film 91f and the effective refractive index of the distribution Bragg reflector 91a is. For example, if the clad film 91f is made of SiO 2 and the distributed Bragg reflector 91a is made of SiO 2 / TiO 2 , then the clad film 91 b can be distinguished from the uppermost layer of the distributed Bragg reflector 91 a made of SiO 2 , It is appropriate that the thickness of the electrode 91f is 0.3 mu m or more. However, in order not to burden the subsequent hole forming process, it is appropriate that the maximum thickness of the clad film 91f is formed within 1 to 3 mu m.

Cladding layer (91f) is has the lower refractive index than the effective refractive index of the distributed Bragg reflector (91a) is not particularly limited, the material of the dielectric film, MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3 ≪ / RTI > When the difference in the refractive index is small, the thickness can be increased to obtain an effect. In addition, it is possible to increase the efficiency in the case of using the SiO 2, using SiO 2 having a refractive index lower than 1.46.

It is possible to consider the case where the dielectric film 91b is omitted and it is not preferable from the viewpoint of the optical waveguide. However, from the viewpoint of the entire technical idea of the present disclosure, the configuration including the distributed Bragg reflector 91a and the clad film 91f There is no reason to exclude. It may be considered to include a dielectric film made of TiO 2 which is a dielectric instead of the distributed Bragg reflector 91a. It is also conceivable to omit the clad film 91f when the distributed Bragg reflector 91a has the SiO 2 layer as the uppermost layer.

The nonconductive reflective film 91 is composed of the distribution Bragg reflector 91a having a high effective refractive index and the dielectric film 91b and the clad film 91f having a low refractive index positioned above and below the distributed Bragg reflector 91a, Guide, and preferably has a total thickness of 3 to 8 mu m. It is also preferable that the non-conductive reflective film 91 has an inclined surface 91m at its edge. Such an inclined surface 91m of the edge can be formed through, for example, a dry etching process. Light incident on the non-conductive reflective film 91 at an angle close to vertical or vertical among the light incident on the non-conductive reflective film 91 serving as the optical waveguide is well reflected toward the substrate 10 side, A part of the light including the light incident on the non-conductive reflective film 91 may not be reflected toward the substrate 10, but may be confined in the distribution Bragg reflector 91a serving as a propagation part and propagate to the side. Thus, light propagating to the side surface of the distributed Bragg reflector 91a is emitted to the outside or reflected toward the substrate 10 side at the inclined surface 91m of the edge of the non-conductive reflective film 91. [ That is, the sloped surface 91m at the edge of the non-conductive reflective film 91 serves as a corner reflector, contributing to improvement of the luminance of the semiconductor light emitting device. It is appropriate that the inclined surface 91m has an angle within a range of 50 DEG to 70 DEG for the reflection to the substrate 10 side smoothly. The inclined surface 91m can be easily formed by wet etching or dry etching, or a combination of both.

FIG. 20 is a view showing a state before two semiconductor light emitting devices are separated into independent semiconductor light emitting devices during a semiconductor light emitting device manufacturing process, and FIG. 21 is a view illustrating a state in which two semiconductor light emitting devices are separated into independent semiconductor light emitting devices Fig. 20 and 21 show the semiconductor light emitting element 3 in a state where the p-side electrode 92, the n-side electrode 80, and the bonding pad 97 are not formed in order to explain the manufacturing process.

The semiconductor light emitting device is manufactured in the form of a wafer including a plurality of semiconductor light emitting devices, and is then separated into individual semiconductor light emitting devices by cutting by braking, sawing, or scribing and breaking. In scribing and breaking, the scribing process may be performed in such a manner that a laser is used and a laser is applied while focusing on the substrate surface of the semiconductor light emitting element and the substrate side including the inside of the substrate. In the scribing process using the laser, along the edge line G of the semiconductor light emitting element 3, that is, the boundary line G between the semiconductor light emitting element 3 and the semiconductor light emitting element 3, . The semiconductor light emitting device that has been preliminarily cut through the braking process performed subsequent to the scribing process is completely separated into individual semiconductor light emitting devices. The braking process is carried out in the direction of the substrate 10 indicated by an arrow F in Fig. 20, for example, or in the opposite direction, along the boundary line G between the semiconductor light emitting element 3 and the semiconductor light emitting element 3, Is applied. In the braking process, the substrate 10 and the semiconductor layers 20, 30, 40, and 50 can be precisely cut along the boundary line G due to the crystalline state, The conductive reflective film 91 can not be accurately cut along the boundary line G due to the amorphous state and is liable to be damaged due to a crack occurring in the peripheral region of the non-conductive reflective film 91. Such damage to the peripheral region of the non-conductive reflective film 91 has a problem in that the yield is lowered due to poor appearance. Preferably, the semiconductor light emitting device and the semiconductor light emitting device are fabricated in the form of a wafer including a plurality of semiconductor light emitting devices during the manufacture of the semiconductor light emitting device, and then, before the scribing process and the braking process using the laser for separating into individual semiconductor light emitting devices, A part of the area H of the non-conductive reflective film 91 in the vicinity of the boundary line G is removed. A part of the region H of the nonconductive reflective film 91 removed along the boundary line G of the semiconductor light emitting element 3 corresponds to the edge region of the nonconductive reflective film 91 from the viewpoint of the individual semiconductor light emitting element. The removal of a part of the region H of the nonconductive reflective film 91 around the boundary line G means that before the semiconductor light emitting device is separated into individual semiconductor light emitting devices, The non-conductive reflective films 91 provided on the semiconductor light emitting devices of the first and second semiconductor light emitting devices are separated from each other in the boundary G region. The edge portions of the nonconductive reflective film 91 are partially removed so that the edge of the nonconductive reflective film 91 of each semiconductor light emitting device is damaged and the appearance becomes poor even if the scribing process and the braking process are subsequently performed using a laser It is possible to obtain the effect of improving the yield. The removal of the portion H of the non-conductive reflective film 91 may be performed by a method such as dry etching or the like and may be performed before the braking process is performed in the entire semiconductor manufacturing process. However, when the holes penetrating the nonconductive reflective film 91 are formed by a method such as dry etching to form the electrical connections 94 and 82, it is preferable that they are formed together. The inclined surface 91m serving as a corner reflector may be formed through a separate etching process. However, in the process of removing the edge region of the non-conductive reflective film 91 to prevent damage, the non- Or by etching the edge portion 91 to be the inclined surface 91m.

The p-side electrode 92 and the bonding pad 97 are provided as part of the n-side electrode 80 on the p-side electrode 92 and the n-side electrode 80, respectively, as shown in Figs. 17 and 19 . The upper surface of the bonding pad 97 on the p-side electrode 92 and the upper surface of the bonding pad 97 on the n-side electrode 80 have the same height. That is, the upper surface of the bonding pad 97 on the p-side electrode 92 and the upper surface of the bonding pad 97 on the n-side electrode 80 are on the same plane. When the semiconductor light emitting device is bonded to an external device by a eutectic bonding method, for example, the bonding pad 97 may be formed so that the p-side electrode 92 side and the n-side electrode 80 side have the same final height Thereby preventing a tilting of the semiconductor light emitting device on the mounting portion and providing a wide and flat bonding surface to obtain a good bonding force and to discharge the heat inside the semiconductor light emitting device to the outside. The bonding pads 97 may be provided on the p-side electrode 92 and the n-side electrode 80, respectively, and the n-side branch electrodes 81 and the n- side branch electrode 81 and the p-side branch electrode 93 at a position not overlapping with the p-side branch electrode 93, i.e., between the n-side branch electrode 81 and the p- In other words, the bonding pad 97 is formed in a region except for the portion of the p-side branch electrode 93 which is the protruding portion at the uppermost portion and the portion of the n-side branch electrode 81 which is the lowest recessed portion. The bonding pad 97 may be formed in a multilayer structure including a lower spacer layer 97a and a bonding layer 97b on the spacer layer 97a and has a total thickness of, for example, 5 to 6 um . For example, the spacer layer 97a is made of a metal layer such as Ni, Cu, or a combination thereof, and the bonding layer 97b is made of Ni / Sn, Ag / Sn / Cu, Ag / Sn , Cu / Sn, Au / Sn combination, and the like. The spacer layer 97a functions as a diffusion barrier and a wetting layer for the solder used in the eutectic bonding. The bonding pad 97 may be formed as a whole using a jutic bonding layer (97b), the cost burden can be reduced. The bonding pad 97 is a portion which protrudes to the uppermost one of the p-side electrode 92 and the n-side electrode 80, that is, the p-side electrode 92, It is preferable that the height of the portion above the electrode 93 is 1 to 3 mu m higher than the height of the portion above the electrode 93. Therefore, at the time of bonding, good bonding between the semiconductor light emitting element and the mount portion can be obtained, and heat emission of the semiconductor light emitting element is assured. At this time, the spacer layer 97a and the bonding layer 97b may be formed by various methods such as plating, electron beam evaporation (E-Beam Evaporation), and thermal evaporation.

It is preferable that all the regions of the n-type semiconductor layer 30 except for the n-side contact region 31 are covered with the active layer 40 and the p-type semiconductor layer 50, as shown in Fig. 14 and Fig. That is, the region to be etched in the semiconductor light emitting device 100 is limited to the n-side contact region 31, there are no other portions to be etched on the edge, and the side surfaces around the semiconductor light emitting device 100 are all scribed and And a cutting surface by a breaking process or the like. As a result, the area of the active layer 40 that generates light is increased, and the light extraction efficiency is improved. The active layer 40 connecting the upper surface of the p-type semiconductor layer 50 and the upper surface of the n-side contact region 31 and the exposed side surface of the p-type semiconductor layer 50, . The exposed side surfaces of the active layer 40 and the p-type semiconductor layer 50 are formed in a region where the distribution Bragg reflector 91a constituting the non-conductive reflective film 91 is difficult to deposit, to be. Therefore, the distribution Bragg reflector 91a in the exposed side region of the active layer 40 and the p-type semiconductor layer 50 can have a relatively low reflection efficiency. As the exposed side surfaces of the active layer 40 and the p-type semiconductor layer 50 are minimized, a region having low reflection efficiency in the distributed Bragg reflector 91a is minimized, and the reflection efficiency as a whole can be improved.

FIG. 22 is a view showing another example of the semiconductor light emitting device according to the present disclosure, and FIG. 23 is a sectional view taken along the line A-A 'in FIG. The first feature of this embodiment is that the branch electrodes 93 on the p-type semiconductor layer 50 are separated from each other and are connected to each other by the electrodes 92 through the respective electrical connections 94. The electrode 92 has a role of supplying a current to the branch electrode 93, a function of reflecting light, a function of dissipating heat, and a function of connecting the element and the outside. It is most preferable that all of the branch electrodes 93 are separated from each other. However, since two or more branch electrodes 93 are separated, branch portions connecting the branch electrodes 93 are removed, . The second feature of this embodiment is that the branch electrode 93 is elongated along one side (C) direction of the device. For example, in FIG. 22, the electrode 92 extends long toward the electrode 80. When the device is turned upside down by the elongate branch electrodes 93 and placed on a mounting portion (e.g., submount, package, COB (Chip on Board)), it can be placed without tilting. From this point of view, it is preferable to lengthen one electrode 93 to which the configuration of the device is permitted. In this disclosure, since the branch electrode 93 is placed under the non-conductive reflective film 91, it is also possible to extend long beyond the electrode 80. [ A third feature of this embodiment is that the electrode 80 is located on the non-conductive reflective film 91. [ The electrode 80 is connected to the branch electrode 81 through an electrical connection 82. The electrode 80 has the same function as the electrode 92. 3, the height of the side where the electrode 80 is located becomes higher, so that the height difference between the electrode 92 side and the electrode 80 side is reduced when the element is coupled with the mount portion, And this advantage is particularly large when using eutectic bonding. The fourth characteristic of this embodiment is that the branch electrode 81 can be arranged in the same manner as the branch electrode 93. [ The fifth feature of this embodiment is that the auxiliary heat-radiating pad 97 is provided. The auxiliary heat sink pad 97 has a function of emitting heat to the outside and / or a function of reflecting light, and is electrically separated from the electrode 92 and / or the electrode 80, (80). The auxiliary heat radiating pad 93 may be used for bonding. Particularly, in the case where the electrode 92 and the electrode 80 are electrically separated from each other, even if the electrode 92 and the electrode 80 are accidentally brought into electrical contact with the auxiliary radiating pad 93, There is no problem in the electrical operation of the battery. It should be borne in mind by those skilled in the art that this embodiment does not have to have all of the above five features.

24 shows another example of the semiconductor light emitting device according to the present disclosure, in which examples of the auxiliary heat radiation pads 121, 122, 123, and 124 are shown between the electrode 92 and the electrode 80. FIG. Preferably the auxiliary radiator pads 121, 122, 123 and 124 are located between the branch electrodes 92 or between the branch electrodes 92 and the branch electrodes 81. Since the auxiliary heat radiating pads 121, 122, 123 and 124 are not formed on the branched electrodes 92, the entire surface of the element can be adhered to the mounting portion at a time of bonding (e.g., eutectic bonding). The auxiliary heat sink pad 121 and the auxiliary heat sink pad 122 are separated from the electrode 92 and the electrode 80. The auxiliary heat sink pad 123 is connected to the electrode 92, Is connected to the electrode (80).

25 shows another example of the semiconductor light emitting device according to the present disclosure, in which a branch electrode 93 extends under the electrode 80 (beyond the reference line B). By introducing the branched electrodes 93 on the p-type semiconductor layer 50, current can be supplied to the required element region without restriction in the construction of the flip chip. Two electrical connections 94 and 94 are provided and the electrical connection 94 can be positioned where it is needed according to the requirements for current spreading. The left electrical connection 94 may be omitted. The electrode 92 also serves as the auxiliary heat radiating pad 97 (see FIG. 22). The current can be supplied by directly connecting the electrical connection 94 to the transmissive conductive film 60 even when there is no branched electrode 93. However, By introducing the branched electrode 93, it becomes possible to supply current even under the electrode 80 that supplies current to the n-type semiconductor layer 30. This also applies to the case of the electrical connection 82.

26 shows another example of the semiconductor light emitting device according to the present disclosure in which the nonconductive reflective film 91 is a multilayer dielectric film 91c, 91d, 91e. For example, the non-conductive reflective film 91 may be composed of a dielectric film 91c made of SiO 2 , a dielectric film 91d made of TiO 2 , and a dielectric film 91e made of SiO 2 , . Preferably, the non-conductive reflective film 91 is formed to include the DBR structure. The formation of the semiconductor light emitting device according to the present disclosure requires a structure such as the branch electrode 93 or the branch electrode 81 and the electrical connection 94 or the electrical connection 82). Therefore, after the production of the semiconductor light emitting device, the reliability of the device, such as the generation of leakage current, may be affected. Therefore, in forming the dielectric film 91c made of SiO 2 , Needs to be. For this purpose, first, it is necessary to form the dielectric film 91c thicker than the thickness of the subsequent dielectric films 91d and 91e. Secondly, it is necessary to form the dielectric film 91c by a method more suitable for securing device reliability. For example, the chemical vapor deposition of a dielectric film (91c) with a SiO 2 (CVD; Chemical Vapor Deposition), among them (preferably) plasma enhanced chemical vapor deposition; formed by (PECVD Plasma Enhanced CVD), and TiO 2 A dielectric film 91d / SiO 2 DBR / dielectric film 91e may be formed by physical vapor deposition (PVD), electron beam evaporation (Electron Beam Evaporation) or sputtering (sputtering) ) Or a thermal evaporation method, the function of the nonconductive reflective film 91 can be ensured while securing the reliability of the semiconductor light emitting device according to the present disclosure. (Step coverage) such as mesa etched regions because chemical vapor deposition is more advantageous than physical vapor deposition, especially electron beam deposition.

27 shows an example of a state in which the semiconductor light emitting element is fixed to the external electrode. The n-side electrode 80 and the p-side electrode 92 of the semiconductor light emitting element C are connected to the external electrodes 1000, As shown in FIG. The external electrodes 1000 and 2000 may be a conductive part provided on the submount, a lead frame of the package, an electric pattern formed on the PCB, or the like. If the lead wire is provided independently of the semiconductor light emitting element C, It is not. Anisotropic conductive film (ACF), eutectic bonding (eg, AuSn, AnCu, CuSn), and soldering are used for bonding the electrodes 80 and 92 to the external electrodes 1000 and 2000 Various methods known in the art can be used. However, as shown in Fig. 28, cracks (indicated by arrows) may occur in the semiconductor light emitting elements due to thermal shock or the like in the process of fixing or bonding. On the other hand, gold (Au) is generally used as the uppermost layer of the electrodes 80 and 92. As shown in FIG. 29, the spread between tin (Sn) and gold (Au) (Reflow temperature (process temperature for melting the solder): 275 캜, Reflow time: 10 min), and gold (Au) is used as the uppermost layer of the electrodes 80 and 92. [ Less than 3 seconds, and the amount of solder material: 1/3 of the area of the bump (electrode)).

FIG. 30 shows an example of the n-side electrode and / or the p-side electrode structure according to the present disclosure, in which a p-side electrode 92 is provided on a non-conductive reflective film 91. The p-side electrode 92 has a lower electrode layer 92-2 and an upper electrode layer 92-3. The lower electrode layer 92-2 may be formed of a stress relieving layer or a crack preventing layer to prevent cracking when the semiconductor light emitting element is fixed to the external electrode, -2), which prevents the blowing of the blowing agent. The lower electrode layer 92-2 may be formed as a reflective layer that reflects light that has passed through the nonconductive reflective film 91. [ The upper electrode layer 92-3 may be formed of a barrier layer that prevents the solder material from penetrating into the semiconductor light emitting device when soldering. The lower electrode layer 92-2 and the upper electrode layer 92-3 may be formed in various combinations of these functions.

For example, a metal having a high reflectance such as Al and Ag may be used for the lower electrode layer 92-2, and materials such as Al and Ag having a large thermal expansion coefficient may be used from the viewpoint of a crack prevention function (linear thermal expansion coefficient : Al: 22.2, Ag: 19.5, Ni: 13, Ti: 8.6, unit 10 -6 m / mK). Al is most preferred in many respects.

For example, the upper electrode layer 92-3 may be made of a material such as Ti, Ni, Cr, W and TiW in view of prevention of breakdown and / or prevention of diffusion. Do not.

Preferably, the electrode 92 may further comprise a contact layer 92-1. By providing the contact layer 92-1, the bonding strength with the non-conductive reflective film 91 can be improved. The contact layer 92-1 may be formed of a metal such as Cr or Ti and is not particularly limited as long as it has a higher bonding force than the lower electrode layer 92-2. Because absorption is to be reduced, it is common to form thin films (for example, 20 Å of Cr). At this time, if the lower electrode layer can have a bonding force, the contact layer can be removed. The contact layer 92-1 d may be omitted and the nonconductive reflective film 91 and the lower electrode layer 92-3 may be omitted by appropriately adjusting the deposition conditions (deposition method, deposition pressure, deposition temperature, etc.) ) Can be increased. It is preferable not to be provided from the viewpoint of light reflection efficiency.

Preferably, and generally, the p-side electrode 92 has an uppermost layer 92-4. The uppermost layer 92-4 is generally made of a metal having good adhesive strength, excellent electrical conductivity, and resistance to oxidation. For example, Au, Sn, AuSn, Ag, Pt, an alloy thereof, or a combination thereof (Au / Sn, Au / AuSn, for example).

As a preferred embodiment, the p-side electrode 92 is formed by introducing a lower electrode layer 92-2 (introducing a metal layer having a large thermal expansion coefficient (for example, Al)) functioning as a crack prevention layer of 1000 ANGSTROM or more, preferably 5000 ANGSTROM or more, In order to prevent cracking of the semiconductor light emitting element in bonding with an external electrode such as soldering, and to prevent the semiconductor light emitting element from cracking and having a large thermal expansion coefficient (see Fig. 31, (Arrow) in operation), and an upper electrode layer 92-3 having a smaller coefficient of thermal expansion is introduced. At this time, it is more preferable that the upper electrode layer 92-3 also serves as a diffusion preventing function, and Ni and Ti are particularly suitable. For example, it is possible to use Al of 1 탆 and Ni of 2 탆. Although the upper limit of the lower electrode layer 92-2 is not particularly limited, it is difficult to control the upper electrode layer 92-3 if it is too thick, so it is preferable to use up to about 1 mu m. On the other hand, if the thickness is reduced to 1000 Å or less, the function as a crack preventing layer becomes low. As will be described later, when the p-side electrode 92 and the plurality of lower electrode layers 92-2 are provided, it is not too bad to use a thinner thickness. The thickness of the upper electrode layer 92-3 may be selected in consideration of the thickness of the lower electrode layer 92-2, and if it is more than 3 mu m, it may be unnecessary or the electrical characteristics of the semiconductor light emitting device may be deteriorated. On the other hand, when the uppermost layer 92-4 is provided, when the uppermost layer 92-4 is fixed to the external electrode by soldering, if the uppermost layer 92-4 is thick, the voids are excessively formed, have. In this respect, the top layer 92-4 preferably has a thickness of less than 5000 angstroms. 35 shows DST results according to the thickness of the uppermost layer 92-4. It showed excellent performance at thickness of 1000 Å ~ 1500 Å, and relatively poor results at 8000 Å. It is preferable to have a thickness of less than 5000 ANGSTROM to maintain a value of 2500 to 3000 or more. On the other hand, it is preferable to have a thickness of 100 ANGSTROM or more in order to exert its function when it is provided.

32 (a) and 32 (b) are graphs showing changes in production yields depending on the thicknesses of the electrodes or bumps according to the present disclosure. Experiments were performed on Cr (10 Å) Layer thickness of the sub-layers, and tested for soldering (non-solder). When the electrodes 80 and 92 had a thickness of 2 탆, they showed a yield of 50% and a yield of almost 100% at a thickness of 2.5 탆. In the test, the electrodes 80 and 92 of the type shown in FIGS. 13 and 29 are used for the pattern, but they are also effective when other patterns are used. In view of the area occupied by the electrodes 80 and 92, the electrodes 80 and 92 must cover at least 50% of the area of the non-conductive reflective film 91 so that the electrodes 80 and 92 can more effectively respond to thermal shocks generated during bonding do.

33 shows another example of the n-side electrode and / or the p-side electrode structure according to the present disclosure, in which the opening 102 is filled with the p-side electrode 92, and the electrical connection 94 is formed between the p- 92, respectively. With this configuration, light passing through the non-conductive reflective film 91 can be reflected by the lower electrode layer 92-2, and absorption of light by the electrical connection 94 can be reduced. For reference, when the contact layer 92-1 is provided, the thickness of the contact layer 92-1 is thin, and the lower electrode layer 92-2 can function as a reflection film. On the other hand, the electrical connection 94 can be formed separately from the p-side electrode 92 through deposition, plating, and / or conductive paste.

34 shows another example of the structure of the n-side electrode and / or the p-side electrode according to the present disclosure, in which the lower electrode layer 92-2 and the upper electrode layer 92-3 are repeatedly laminated a plurality of times. For example, the p-side electrode 92 includes a contact layer 92-1 (Cr having a thickness of 20A), four pairs of a lower contact layer 92-2 (Al having a thickness of 5000A) / an upper contact layer 92-3 Thickness Ni) and the top layer 92-4 (1 mu m thick Au). Only one of the lower electrode layer 92-2 and the upper electrode layer 92-3 may be provided. In addition, all the lower electrode layers 92-2 and the upper electrode layers 92-3 need not be made of the same material. For example, the lower electrode layer 92-2 may be composed of a combination of Al and Ag. Also, one lower electrode layer 92-2 may be composed of a plurality of metals. It is needless to say that a material layer may be additionally provided in addition to the contact layer 92-1, the lower electrode layer 92-2, the upper electrode layer 92-3 and the uppermost layer 92-4. Needless to say, it is also possible to have the structure shown in FIG. It is possible to more reliably prevent the lower electrode layer 92-2 from being pushed out or coming out through the repeated laminated structure.

36 shows another example of the n-side electrode and / or the p-side electrode structure according to the present disclosure, in which a p-side electrode 92 is provided on the non-conductive reflective film 91. [ The p-side electrode 92 includes a bonding layer 92-5, a diffusion barrier layer 92-7, and a light reflection layer 92-6.

In this example, the bonding layer 92-5 includes at least one of Ni, Cu, NiAg, and Be. The bonding layer 92-5 is a layer which is bonded to the solder material when bonding (for example, soldering) to an external electrode using a solder material. When the bonding layer 92-5 is made of Au, an alloy is formed by bonding with the solder material Sn, and unstable bonding (for example, a bond that is easily broken) may occur. As a result, such unstable bonding deteriorates the long-term reliability of the semiconductor light emitting device, and the bonding layer 92-5 may be separated over time, and the possibility of occurrence of a failure increases. As in this example, even if the bonding layer 92-5 is made of at least one of Ni, Cu, NiAg, and Be, it also bonds with Sn to form an alloy. However, these metals have a more stable bond than Au and the possibility of failure is lowered.

Preferably, and generally, the p-side electrode 92 has an uppermost layer 92-4 (oxidation preventing layer). The uppermost layer 92-4 is generally made of a metal having good adhesive strength, excellent electrical conductivity, and resistance to oxidation. For example, it may be composed of Au, Sn, AuSn, Ag, Pt, an alloy thereof, or a combination thereof (e.g., Au / Sn). If the bonding layer 92-5 is different from the top layer 92-4 and the diffusion preventing layer 92-7, other materials than Ni, Cu, NiAg, and Be described above are also possible.

The light reflection layer 92-6 reflects light that has exited from the active layer 40 and has passed through the non-conductive reflective film 91. [ The light reflecting layer 92-6 may be formed of a stress relieving layer or a crack preventing layer that prevents cracking when the semiconductor light emitting element is fixed to an external electrode (e.g., 1000, 2000; see FIG. 27). At this time, the bonding layer 92-5 may be formed as a burst preventing layer for preventing the light reflection layer 92-6 from breaking. In addition, the bonding layer 92-5 may function to prevent the solder material from penetrating into the semiconductor light emitting device upon bonding with the solder material. The light reflection layer 92-6 and the bonding layer 92-5 may be formed by various combinations of these functions.

For example, a metal having a high reflectivity such as Al and Ag may be used for the light reflection layer 92-6, and materials such as Al and Ag having a large thermal expansion coefficient can be used from the viewpoint of a crack prevention function (linear thermal expansion coefficient : Al: 22.2, Ag: 19.5, Ni: 13, Ti: 8.6, unit 10 -6 m / mK). Al is most preferred in many respects.

For example, the bonding layer 92-5 is preferably made of Ni in view of prevention of breakdown among Ni, Cu, NiAg, and Be described above and / or prevention of diffusion.

In this example, the diffusion preventing layer 92-7 includes at least one of Ti, TiW, Cr, Pt, Ta, Mg, and Fe, (E.g., Ni). If such a diffusion preventing function is used, other materials than the above-described materials may also be selected as the diffusion preventing layer 92-7, provided that the material is different from the light reflecting layer 92-6 and the bonding layer 92-5. In the absence of the diffusion preventing layer 92-7, the material (for example, Al) of the light reflection layer 92-6 penetrates or diffuses into the bonding layer 92-5 and the bonding force of the bonding layer 92-5, The strength may be lowered. As described above, although the bonding layer 92-5 can prevent the penetration of the bonding material toward the plurality of semiconductor layers 30, 40, and 50, the material of the light reflection layer 92-6 is bonded to the bonding layers 92-5 ), Bonding strength or strength of the bonding is lowered. Therefore, it is preferable that the diffusion prevention layer 92-7 is interposed between the light reflection layer 92-6 and the bonding layer 92-5. On the other hand, the diffusion preventing layer 92-7 may be formed so as to prevent the light reflecting layer 92-6 from breaking. For example, the diffusion preventing layer 92-7 is selected as a material having a smaller thermal expansion coefficient than the light reflecting layer 92-6, and is formed to a thickness of about 0.1 mu m to 0.3 mu m so that the light reflecting layer 92-6 protrudes Or breakdown can be prevented. Alternatively, the thermal expansion coefficient can be made to be the same as that of the bonding layer 92-5, the diffusion preventing layer 92-7, and the light reflecting layer 92-6.

Preferably, the electrode 92 further comprises a contact layer 92-1. By providing the contact layer 92-1, the bonding strength with the non-conductive reflective film 91 can be improved. The contact layer 92-1 may be formed of a metal such as Cr or Ti and is not particularly limited as long as it has a higher bonding force than the light reflection layer 92-6. Because absorption is to be reduced, it is common to form thin films (for example, 20 Å of Cr). At this time, the contact layer 92-1 can be removed if the light reflection layer 92-6 can have a required bonding force. The contact layer 92-1 may be omitted and the nonconductive reflective film 91 and the light reflecting layer 92-6 may be formed by appropriately adjusting the deposition conditions (deposition method, deposition pressure, deposition temperature, etc.) Can be increased. From the viewpoint of light reflection efficiency, the contact layer 92-1 is preferably not provided.

A light reflection layer 92-6 functioning as a crack prevention layer of 1000 angstroms or more, preferably 5000 angstroms or more is introduced (a metal layer having a large thermal expansion coefficient (for example, Al) is introduced ), Cracking of the semiconductor light emitting element is prevented when the electrode is coupled with an external electrode such as soldering. On the other hand, in order to prevent the light reflection layer 92-6 from protruding or coming out (in Fig. 31, an Al electrode formed to have a thickness of 1000 ANGSTROM or more acts as an element (Arrow)), and a bonding layer 92-5 having a thermal expansion coefficient smaller than that of the light reflection layer 92-6 is formed of Ni.

Ti, TiW, Cr, Pt, Ta, Mg, and the like are used as the diffusion preventive layer 92-7 and the diffusion preventive layer 92-7 are smaller than the light reflection layer 92-6, , And Fe, the diffusion preventing layer 92-7 may have a function of preventing the bursting and diffusion. In this case, the material and thickness of the bonding layer 92-5 can be freely selected. For example, it is possible to use Al (light reflecting layer) of 1 탆, diffusion preventing layer of 0.1 탆 to 0.3 탆, and Ni (bonding layer) of 2 탆. The thickness of the diffusion preventing layer 92-7 is preferably 0.1 mu m to 0.3 mu m. If it is too thin, the diffusion preventive function is weak. If it is too thick, materials such as Ni, Ti, and W increase the temperature in the deposition equipment in the process of thick deposition, and there is a possibility that there is a problem in the PR LIFT OFF process.

There is no particular limitation on the upper limit of the light reflection layer 92-6, but if it is too thick, it is difficult to control with the bonding layer 92-5. On the other hand, if the light reflecting layer 92-6 is thinned to 1000 Å or less, the function as a crack preventing layer becomes low. As will be described later in Fig. 38, when the p-side electrode 92 includes a plurality of lower electrode layers 92-2, it is not too bad that each light reflection layer 92-6 is formed to have a smaller thickness.

The thickness of the bonding layer 92-5 may be selected in consideration of the thickness of the light reflection layer of 0.3 탆 to 1 탆, and if it exceeds 3 탆, the thickness may be unnecessary or the electrical characteristics of the semiconductor light emitting device may be impaired.

37 shows another example of the n-side electrode and / or the p-side electrode structure according to the present disclosure, in which the opening 102 is filled with the p-side electrode 92, and the electrical connection 94 is formed between the p- 92, respectively. With this configuration, light passing through the non-conductive reflective film 91 can be reflected by the light reflection layer 92-6, and absorption of light by the electrical connection 94 can be reduced. For reference, when the contact layer 92-1 is provided, the thickness of the contact layer 92-1 is thin, so that the light reflection layer 92-6 can function as a reflection film. On the other hand, the electrical connection 94 can be formed separately from the p-side electrode 92 through deposition, plating, and / or conductive paste.

38 shows another example of the structure of the n-side electrode and / or the p-side electrode according to the present disclosure. The p-side electrode 92 includes a contact layer 92-1, a lower electrode layer 92 -2) / the upper electrode layer 92-3, the light reflecting layer 92-6, the diffusion preventing layer 92-7, the bonding layer 92-5, and the uppermost layer 92-4. The lower electrode layer 92-2 and the upper electrode layer 92-3 are repeatedly laminated a plurality of times. For example, the p-side electrode 92 includes a contact layer 92-1 (Cr having a thickness of 20 A), three pairs of a lower contact layer 92-2 (Al having a thickness of 3000 to 10000 A) Ti, Ti, Cr, Pt, Ta, Mg, and Fe (thickness: 1000 to 3000 ANGSTROM), a light reflecting layer 92-6 (Al with a thickness of 3000 to 10,000 ANGSTROM), a diffusion preventing layer 92-7 A bonding layer 92-5 (Ni having a thickness of 1000 to 3000 A), and an uppermost layer 92-4 (having a thickness of less than 1 mu m of Au).

Only one of the lower electrode layer 92-2 and the upper electrode layer 92-3 may be provided. In addition, all the lower electrode layers 92-2 and the upper electrode layers 92-3 need not be made of the same material. For example, the lower electrode layer 92-2 may be composed of a combination of Al and Ag. Also, one lower electrode layer 92-2 may be composed of a plurality of metals. It is needless to say that a material layer may be additionally provided in addition to the contact layer 92-1, the lower electrode layer 92-2, the upper electrode layer 92-3 and the uppermost layer 92-4. Needless to say, the electrode 92 shown in Fig. 38 can have the structure shown in Fig. It is possible to more reliably prevent the lower electrode layer 92-2 from being pushed out or coming out through the repeated laminated structure.

Fig. 39 shows another example of the structure of the n-side electrode and / or the p-side electrode according to the present disclosure. The p-side electrode 92 includes a contact layer 92-1, a light reflection layer 92-6, An anti-blocking layer 92-7, a bonding layer 92-5, an additional bonding layer 92-8, and an uppermost layer 92-4 (an anti-oxidation layer). An additional bonding layer 92-8 is formed between the uppermost layer 92-4 and the bonding layer 92-5. In this example, the additional bonding layer 92-8 is a soldering layer made of tin (Sn) or containing tin. By using soldering (Sn soldering, Pb soldering, etc.) in this example, the bonding layer 92-5 and the additional bonding layer 92-8 can be bonded to the bonding material. For example, if the additional bonding layer 92-8 is formed to a thickness of 5000 ANGSTROM or more, the bonding material can be bonded to the bonding layer 92-5 as well as the additional bonding layer 92-8.

The diffusion preventing layer 92-7 prevents the light reflection layer 92-6 material (e.g., Al) from penetrating the light reflection layer 92-6 to the bonding layer 92-5. The bonding layer 92-5 may function to prevent the bonding material from diffusing toward the plurality of semiconductor layers 30, 40 and 50 while being the bonding layer 92-5. As the additional bonding layer 92-8, a tin-containing soldering layer described in Figs. 29 and 35 and the like can be applied.

The p-side electrode 92 includes a contact layer 92-1, a lower electrode layer 92-1 which is repeatedly stacked a plurality of times, and a p- 2, the upper electrode layer 92-3, the light reflecting layer 92-6, the diffusion preventing layer 92-7, the bonding layer 92-5, the additional bonding layer 92-8, -4). The example of the repetitive stacked lower electrode layer 92-2 / upper electrode layer 92-3 can be applied as shown in FIG. The bonding layer 92-5, and the additional bonding layer 92-8 may be applied to the example described in Fig.

41 shows another example of the n-side electrode and / or the p-side electrode structure according to the present disclosure. The p-side electrode 92 includes a contact layer 92-1, a lower electrode layer 92 -2, an upper electrode layer 92-3, a light reflection layer 92-6, a diffusion prevention layer 92-7, a bonding layer 92-5, and an additional bonding layer 92-8T. In this example, the top layer is the additional bonding layer 92-8T, and the additional bonding layer 92-8T is substantially gold-free and contains tin and has a heat treated soldering layer. Here, the meaning of containing the tin includes the case of only tin. Further, the soldering layer means that it is bonded to the external electrode by soldering. For example, solders used in soldering are lead-free solder pastes and include grains and fluxes including indium, tin, silver, copper, impurities, and the like. For example, about 97% tin, about 3% silver, and the like. That is, annotations are the main component. The melting point of tin is 220 캜. Also, as an example, the soldering process can be performed at 230 ° C to 267 ° C, and narrowly at about 240 ° C. The heat treatment temperature may be lower than or equal to the melting point of tin. For example, the heat treatment temperature is 100 ° C to 400 ° C.

The additional bonding layer 92-8T is heat treated to significantly improve the bonding strength. This is believed to be due to the fact that gold is not included between the additional bonding layer 92-8T containing the tin and the solder, It is presumed that the bonding strength with the bonding layer 92-5 made of Ni is improved due to heat treatment. Examples of the solder include Sn, PbSn, PbSnAg, PbInAb, PbAg, SnPbAg, PbIn, and CdZn. Therefore, the additional bonding layer 92-8T may be formed of Pb, Ag, In, Ab, Cd, Zn or the like in addition to the tin and heat-treated.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; a first semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, A plurality of semiconductor layers which are grown using a growth substrate and have an active layer which generates light through recombination of the semiconductor layers; A non-conductive reflective film coupled to the plurality of semiconductor layers at an opposite side of the growth substrate; And a bonding layer electrically connected to the plurality of semiconductor layers and formed on the nonconductive reflective layer, the bonding layer including at least one of Ni, Cu, NiAg, and Be bonded to the bonding material at the time of bonding, And a light reflecting layer formed between the bonding layer and the light reflecting layer to prevent penetration of the light reflecting layer material into the bonding layer, And an electrode having a diffusion preventing layer containing at least one of Pt, Ta, Mg, and Fe.

(2) a lower electrode layer having a first thermal expansion coefficient between the non-conductive reflective film and the light reflecting layer to prevent cracking of the semiconductor light emitting element; And an upper electrode layer having a second thermal expansion coefficient larger than the first thermal expansion coefficient so as to prevent the lower electrode layer from rupturing.

(3) an anti-oxidation layer formed on the bonding layer.

(4) An electrical connecting part electrically connecting the plurality of semiconductor layers and at least one electrode, wherein the electrical connecting part is formed through the non-conductive reflective film, and the electrode is formed on the non- Wherein the light reflection layer is formed in the connection part, and the light reflection layer is formed in the active layer in the electrical connection part and reflects light that has passed through the non-conductive reflection film.

(5) an additional electrode formed on the non-conductive reflective film and having a bonding layer, a light reflecting layer, and a diffusion preventing layer in the same manner as the electrode, wherein the electrode supplies one of electrons and holes to the first semiconductor layer, Wherein the electrode supplies the remaining one of electrons and holes to the second semiconductor layer, and the first electrode and the second electrode cover at least 50% of the area of the non-conductive reflective film.

(6) A further bonding layer containing tin (Sn) formed on the bonding layer, wherein the bonding layer further bonds to the bonding material; And an anti-oxidation layer formed on the additional bonding layer.

(7) The semiconductor light emitting device according to any one of the preceding claims, further comprising: a top bonding layer formed on the bonding layer, the bonding layer including tin (Sn) substantially free of gold (Au) and heat treated.

(8) A semiconductor light emitting device having a structure in which a lower electrode layer and an upper electrode layer are repeatedly laminated.

(9) The semiconductor light emitting device according to (9), wherein the lower electrode layer and the light reflecting layer are made of the same material, and the upper electrode layer and the bonding layer are made of the same material.

(10) The semiconductor light emitting device according to any one of (1) to (6), wherein the bonding layer is made of Ni and the light reflection layer is made of Al.

(11) A liquid crystal display device, comprising: a lower electrode layer having a first thermal expansion coefficient between a non-conductive reflective film and a light reflecting layer, the lower electrode layer having a second thermal expansion coefficient larger than the first thermal expansion coefficient, A repeated stacked structure of electrode layers; An anti-oxidation layer formed on the bonding layer; And an additional electrode formed on the non-conductive reflective film and having an antioxidant layer, a bonding layer, a light reflecting layer, and a diffusion preventing layer in the same manner as the electrode.

According to the present disclosure, there is provided a semiconductor light emitting device having an electrode structure with improved bonding strength in bonding.

80: first electrode 92: second electrode 92-1: contact layer
92-2: lower electrode layer 92-3: upper electrode layer 92-4: uppermost layer
92-5: bonding layer 92-6: light reflecting layer 92-7: diffusion preventing layer
92-8, 92-8T: additional bonding layer

Claims (11)

In the semiconductor light emitting device,
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes, A plurality of semiconductor layers grown using a growth substrate;
A non-conductive reflective film coupled to the plurality of semiconductor layers at an opposite side of the growth substrate; And
An electrode formed on a non-conductive reflective film electrically connected to a plurality of semiconductor layers, the electrode being bonded to a bonding material at the time of bonding and including at least one of Ni, Cu, NiAg, and Be (except Au and Pt) A light reflection layer provided between the bonding layer and the non-conductive reflective layer, the light reflection layer being formed in the active layer and reflecting light that has passed through the non-conductive reflective layer; and a light reflection layer provided between the bonding layer and the light reflection layer to prevent the light reflection layer material from penetrating into the bonding layer. And an electrode having a diffusion preventing layer containing at least one of Ti, Cr, Pt, Ta, Mg, and Fe. The method according to claim 1,
Between the non-conductive reflective film and the light reflective layer,
A lower electrode layer having a first thermal expansion coefficient to prevent cracking of the semiconductor light emitting device; And,
And an upper electrode layer having a second thermal expansion coefficient larger than the first thermal expansion coefficient so as to prevent the lower electrode layer from rupturing. The method according to claim 1,
And an anti-oxidation layer formed on the bonding layer. The method according to claim 1,
And an electrical connecting part for electrically connecting the plurality of semiconductor layers and the at least one electrode,
The electrical connection portion is formed through the non-conductive reflective film,
An electrode is formed on the nonconductive reflective film and in the electrical connection portion,
Wherein the light reflection layer is formed in the active layer in the electrical connection portion and reflects light that has passed through the non-conductive reflection film. The method according to claim 1,
An additional electrode formed on the non-conductive reflective film and having a bonding layer, a light reflecting layer, and an anti-diffusion layer like the electrode,
The electrode supplies one of electrons and holes to the first semiconductor layer and the further electrode supplies the remaining one of electrons and holes to the second semiconductor layer,
Wherein the first electrode and the second electrode cover at least 50% of the area of the non-conductive reflective film. The method according to claim 1,
An additional bonding layer containing tin (Sn) formed on the bonding layer, wherein the bonding layer further bonds to the bonding material; And
And an anti-oxidation layer formed on the additional bonding layer. The method according to claim 1,
An uppermost layer formed on the bonding layer, the additional bonding layer including substantially no gold (Au) and containing tin (Sn) and heat-treated. The method of claim 2,
Wherein the lower electrode layer and the upper electrode layer are repeatedly stacked. The method of claim 2,
The lower electrode layer and the light reflection layer are made of the same material,
Wherein the upper electrode layer and the bonding layer are made of the same material. The method of claim 9,
The bonding layer is made of Ni,
Wherein the light reflection layer is made of Al. The method according to claim 1,
A lower electrode layer having a first thermal expansion coefficient to prevent cracking of the semiconductor light emitting element and a second electrode layer having a second thermal expansion coefficient larger than the first thermal expansion coefficient so as to prevent the lower electrode layer from breaking, Laminated structure;
An anti-oxidation layer formed on the bonding layer; And
An additional electrode formed on the non-conductive reflective film and having an antioxidant layer, a bonding layer, a light reflecting layer, and a diffusion preventing layer in the same manner as the electrode.
KR1020150087505A 2015-06-18 2015-06-19 Semiconductor light emitting device KR101689344B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020150087505A KR101689344B1 (en) 2015-06-19 2015-06-19 Semiconductor light emitting device
PCT/KR2016/006547 WO2016204594A1 (en) 2015-06-18 2016-06-20 Semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150087505A KR101689344B1 (en) 2015-06-19 2015-06-19 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
KR101689344B1 true KR101689344B1 (en) 2016-12-27

Family

ID=57736774

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150087505A KR101689344B1 (en) 2015-06-18 2015-06-19 Semiconductor light emitting device

Country Status (1)

Country Link
KR (1) KR101689344B1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050075076A (en) * 2004-01-15 2005-07-20 학교법인 포항공과대학교 Gallium nitride-based Ⅲ­Ⅴ group compound semiconductor device and methed of producing the same
JP2013214426A (en) * 2012-04-03 2013-10-17 Nippon Electric Glass Co Ltd Wavelength conversion member and light emitting device
KR20140031664A (en) * 2012-09-05 2014-03-13 주식회사 세미콘라이트 Semiconductor light emimitting device
KR20150055390A (en) * 2013-11-13 2015-05-21 주식회사 세미콘라이트 Semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050075076A (en) * 2004-01-15 2005-07-20 학교법인 포항공과대학교 Gallium nitride-based Ⅲ­Ⅴ group compound semiconductor device and methed of producing the same
JP2013214426A (en) * 2012-04-03 2013-10-17 Nippon Electric Glass Co Ltd Wavelength conversion member and light emitting device
KR20140031664A (en) * 2012-09-05 2014-03-13 주식회사 세미콘라이트 Semiconductor light emimitting device
KR20150055390A (en) * 2013-11-13 2015-05-21 주식회사 세미콘라이트 Semiconductor light emitting device

Similar Documents

Publication Publication Date Title
US10950755B2 (en) Light emitting diode, method of fabricating the same and LED module having the same
US9748446B2 (en) Semiconductor light emitting device
KR101561203B1 (en) Semiconductor light emitting device
KR101368720B1 (en) Semiconductor light emimitting device
CN108598251B (en) Semiconductor light emitting element
US10205060B2 (en) Semiconductor light emitting device
KR101638120B1 (en) Semiconductor light emitting device
KR101378948B1 (en) Semiconductor light emimitting device
KR101704456B1 (en) Semiconductor light emitting device and method of manufactruring the same
KR101611481B1 (en) Semiconductor light emitting device
KR101604092B1 (en) Semiconductor light emitting device
KR101541430B1 (en) Semiconductor light emitting device
KR101689344B1 (en) Semiconductor light emitting device
KR20150114446A (en) Semiconductor light emitting device
KR101628244B1 (en) Semiconductor light emitting device
KR101403641B1 (en) Semiconductor light emimitting device
KR101578485B1 (en) Semiconductor light emitting device
KR101591969B1 (en) Semiconductor light emitting device
KR101591966B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR20150127556A (en) Semiconductor light emitting device
KR101378950B1 (en) Semiconductor light emimitting device
KR20140099845A (en) Semiconductor light emimitting device
KR101446732B1 (en) Semiconductor light emimitting device
KR101378946B1 (en) Method of manufacturing semiconductor light emimitting device
KR101652351B1 (en) Semiconductor light emitting device

Legal Events

Date Code Title Description
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20190925

Year of fee payment: 4