KR101679594B1

KR101679594B1 - z-axis MEMS accelerometer

Info

Publication number: KR101679594B1
Application number: KR1020150066228A
Authority: KR
Inventors: 송기무; 윤근중; 강정식; 김용국; 한승오; 송현주
Original assignee: 주식회사 신성씨앤티
Priority date: 2015-05-12
Filing date: 2015-05-12
Publication date: 2016-11-25
Also published as: KR20160133298A

Abstract

There is provided a MEMS acceleration sensor for sensing an acceleration in a z-axis direction perpendicular to an x-y plane by using a rotation motion of a sensor mass with respect to a rotation support shaft. The MEMS acceleration sensor is disposed parallel to the bottom wafer substrate and includes a sensor having a rotational motion relative to at least two axes parallel to the bottom wafer when an external acceleration is input in a direction perpendicular to the bottom wafer substrate, Mass; A torsion spring that acts on the at least two axes to provide a restoring force against rotational movement of the sensor mass; And at least one sensing electrode for sensing at least one of a vertical linear displacement or a rotational displacement of the sensor mass.

Description

z-axis MEMS accelerometer < RTI ID = 0.0 >

The present invention relates to a MEMS acceleration sensor, and more particularly, to a z-axis MEMS acceleration sensor that detects an acceleration in a z-axis direction perpendicular to an x-y plane by using a pivotal movement of a sensor mass with respect to a rotation support shaft.

Microelectromechanical systems (MEMS) is a technology that implements mechanical and electrical components using a semiconductor process. A typical example of a device using MEMS technology is a MEMS gyroscope that measures angular velocity and a MEMS acceleration sensor that measures acceleration. In general, the motion of an object in space can be described as a three-degree-of-freedom rotational motion and a three-degree-of-freedom linear motion, wherein the rotational motion of the three degrees of freedom can be sensed by the x-, Linear motion of three degrees of freedom can be detected by x, y, z acceleration sensors.

The gyroscope measures the angular velocity by measuring the Coriolis force generated when a rotational angular velocity is applied to an object moving at a predetermined speed. At this time, the Coriolis force is proportional to the cross product of the rotational velocity and the rotational angular velocity due to the external force. Further, in order to sense the generated Coriolis force, the gyroscope has a mass which oscillates inside thereof. Generally, a direction in which a mass in a gyroscope is driven is referred to as a direction in which a mass is driven, a direction in which a rotational angular velocity is input to a gyroscope is referred to as an input direction, and a direction in which a coriolis force generated in a mass is sensed is referred to as a sensing direction. The excitation direction, the input direction, and the sensing direction are set in directions orthogonal to each other in space. Typically, a gyroscope using MEMS technology is divided into an x-axis (or y-axis) gyroscope and a z-axis gyroscope when viewed from the xy plane of the bottom wafer substrate.

On the other hand, unlike the gyroscope, the acceleration sensor is relatively simple compared to the gyroscope because the acceleration sensor can measure the acceleration by sensing the displacement of the mass by the external acceleration acting directly on the mass rather than requiring an artificial excitation . Among the MEMS acceleration sensors, there are an x-axis or y-axis acceleration sensor and a z-axis acceleration sensor capable of detecting acceleration in two axial directions parallel to the plane formed by the bottom wafer substrate. The x-axis acceleration sensor may be defined as an acceleration sensor whose input direction is parallel to the plane, and the y-axis acceleration sensor may be defined as an acceleration sensor in a direction perpendicular to the x-axis on a plane. However, since the y-axis acceleration sensor is substantially the same as the x-axis accelerometer in terms of the installation direction of the housing, only the x-axis acceleration sensor and the y-axis acceleration sensor are collectively referred to as an x-y axis acceleration sensor.

Since the xy-axis acceleration sensor senses the movement of the sensor mass in the plane, it is possible to detect the movement of the sensor mass by arranging the sensor mass in parallel with the bottom wafer substrate and by the sensing electrode formed in a direction parallel to the bottom wafer substrate Structure. On the other hand, since the z-axis acceleration sensor must sense the movement in the direction perpendicular to the bottom wafer substrate, it is difficult to implement the method in which the sensor mass and the sensing electrode are vertically arranged due to the characteristics of the MEMS device manufactured by stacking the wafers.

Therefore, a z-axis MEMS acceleration sensor 10 as shown in Fig. 1 is known in which the acceleration in the z-axis direction perpendicular to the x-y plane is detected by using the pivotal movement of the sensor mass with respect to one rotation support shaft. The z-axis MEMS acceleration sensor 10 includes a fixed anchor 2, a rotation support shaft 3 for providing torsional rigidity, a connection link 4 for connecting the fixed anchor 2 and the rotation support shaft 3, And a sensor mass 1 rotatable with respect to the rotation support shaft 3. [

At this time, the A-A 'cross section of the z-axis MEMS acceleration sensor 10 can be represented as shown in FIG. When the external acceleration acts in the z-axis direction, the sensor mass 1 rotates downward (clockwise) by? 1 due to the rotation inertia of the sensor mass 1. At this time, the sensing electrode (6) provided on the bottom wafer (5) senses the displacement of the sensor mass (1) based on the change in capacitance due to approach of the sensor mass (1). From this displacement,? 1 can be calculated, and external acceleration can be calculated by calculating the rotational differential equation for the sensor mass 1.

However, such a conventional z-axis MEMS acceleration sensor has a problem in that the sensor mass 1 is subjected to repetitive pivotal movements to cause corner points at which the connection link 4 and the rotary support shaft 3 meet, The structural stability is deteriorated because the excessive stress is concentrated at the point where the electrode (3) meets. When the rotation of the sensor mass 1 is repeated in a state where stress is concentrated on a specific portion of the MEMS acceleration sensor, the corner between the connection link 4 and the rotation support shaft 3 and the corner between the sensor mass 1 ) And the rotary support shaft (3). This problem adversely affects the durability and sensing accuracy of the z-axis MEMS acceleration sensor. Therefore, it is necessary to devise a MEMS acceleration sensor which is easy to manufacture, and which can prevent or reduce the possibility of damage due to stress concentration.

SUMMARY OF THE INVENTION The present invention provides a z-axis MEMS acceleration sensor that senses an acceleration in a z-axis direction perpendicular to an xy plane by using a rotation motion of a sensor mass with respect to a rotation support shaft, Thereby reducing the torsional stress due to the torque acting on each of the rotation support shafts.

According to another aspect of the present invention, there is provided a structure for dispersing stress concentrated at a corner between a rotation support shaft and a connection link in the z-axis MEMS acceleration sensor.

It is another object of the present invention to provide an arrangement of sensing electrodes for more accurate acceleration sensing in a z-axis MEMS acceleration sensor having a plurality of rotation support shafts.

The technical objects of the present invention are not limited to the technical matters mentioned above, and other technical subjects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a MEMS acceleration sensor including: a bottom wafer substrate; a plurality of MEMS acceleration sensors disposed on the bottom wafer substrate in parallel with each other; A sensor mass having a rotational motion relative to two or more axes parallel to the sensor mass; A torsion spring that acts on said two or more axes to provide a restoring force against rotational movement of said sensor mass; And at least one sensing electrode sensing at least one of a vertical linear displacement or a rotational displacement of the sensor mass.

According to the z-axis MEMS acceleration sensor of the present invention, the torsional stress acting on the rotation support shaft by the rotation motion of the sensor mass is dispersed by the plurality of rotation support axes, and the torsional stress concentrated on the corner portion between the connection link and the rotation support shaft The torsional stress can be reduced, so that the durability of the z-axis MEMS acceleration sensor is improved.

According to the z-axis MEMS acceleration sensor of the present invention, a differential sensing electrode or a single sensing electrode for sensing motion of a sensor mass is disposed at a proper position to improve the sensing accuracy of a z-axis MEMS acceleration sensor having a plurality of rotation support shafts .

1 is a plan view showing a z-axis MEMS acceleration sensor having a sensor mass rotating in a conventional y-axis.
2 is a cross-sectional view of the z-axis MEMS acceleration sensor of FIG. 1 taken along line AA '.
3 is a plan view showing a z-axis MEMS acceleration sensor according to an embodiment of the present invention.
FIG. 4 is a perspective view showing the z-axis MEMS acceleration sensor of FIG. 3. FIG.
5 is a cross-sectional view of the z-axis MEMS acceleration sensor of Fig. 3 taken along the line BB '.
Fig. 6 is a free-body diagram of the second connecting link mechanism, the third connecting link mechanism, and the sensor mass of Fig. 5; Fig.
7 is a view illustrating an arrangement of a differential sensing electrode according to another embodiment of the present invention.
8 is a plan view showing the arrangement of electrodes in a z-axis MEMS acceleration sensor according to an embodiment of the present invention.
FIG. 9 is a view showing a DD 'section of the z-axis MEMS acceleration sensor of FIG. 8. FIG.
10 is a plan view of a z-axis MEMS acceleration sensor according to another embodiment of the present invention.
11 is a plan view of a z-axis MEMS acceleration sensor according to another embodiment of the present invention.
12 is a plan view showing a z-axis MEMS acceleration sensor having two rotation support shafts.
13 is a sectional view of the z-axis MEMS acceleration sensor of Fig. 12 taken along line EE '.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Further, the embodiments described herein will be described with reference to the perspective view, cross-sectional view, side view, and / or schematic views, which are ideal illustrations of the present invention. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are generated according to the manufacturing process. In addition, in the drawings of the present invention, each constituent element may be somewhat enlarged or reduced in view of convenience of explanation.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 is a plan view showing a z-axis MEMS acceleration sensor 20 according to an embodiment of the present invention, and FIG. 4 is a perspective view showing a z-axis MEMS acceleration sensor 20 of FIG. The z-axis MEMS acceleration sensor 20 is provided with a plurality of rotation support shafts, in particular three rotation support shafts 13a, 13b, and 13c, to provide a support force due to torsional rigidity unlike the prior art. Accordingly, at least three connection links connecting the anchor 12 and the rotary support shafts 13a, 13b, 13c and having a relatively high rigidity are required.

Specifically, the first connection link 14a connects the fixed anchor 12 and the first rotation support shaft 13a, and the second connection link 14b and the third connection link 14c connect the first rotation support shaft 13a, Both ends of the second rotation support shaft 13a are connected to both ends of the second rotation support shaft 13b. The fourth connection link 14d connects the second rotation support shaft 13b and the third rotation support shaft 13c. At this time, the first rotary support shaft 13a and the second rotary support shaft 13b are connected only to the corresponding connection links 14a, 14b, 14c. On the other hand, the third rotary support shaft 13c is connected to one side of the sensor mass 11 as well as the connection link 14d so that it is first subjected to torque when the sensor mass 11 rotates, 14b and 14c to the second rotation support shaft 13b and the first rotation support shaft 13a.

As a result, when the sensor mass 11 rotates due to external acceleration, there are three rotation support shafts 13a, 13b, and 13c that support the twist due to the rotation of the sensor masses 11, ). Therefore, the stress at the corner portion where each of the rotation support shafts 13a, 13b, 13c or the rotation support shafts 13a, 13b, 13c and the connection links 14a, 14b, 14c, 14d meet uses one rotation support shaft As compared with the case of FIG.

5 is a cross-sectional view taken along the line B-B 'of the z-axis MEMS acceleration sensor 20 of FIG. When the external acceleration acts in the z-axis direction, the sensor mass 11 rotates downward (in the clockwise direction) by the rotation inertia of the sensor mass 11. At this time, the rotation angles? 1,? 2,? 3 are formed on the three rotation support shafts 13a, 13b, 13c in accordance with the respective torsional rigidity. As a result, the sensor mass 11 is not a complete rotational motion for one axis but has both a rotational motion component and a linear motion component. At this time, the sensing electrode 16 provided on the bottom wafer 15 senses the displacement of the sensor mass 11 based on the change in the capacitance due to the approach of the sensor mass 11. Based on this displacement, the external acceleration can finally be calculated by calculating the rotational differential equation relating to the sensor mass 1.

6 is a view showing a free-body diagram of the second connection links 14b and 14c, the third connection link 14d and the sensor mass 11 in Fig. The torque equation of motion according to the free body diagram can be expressed as Equation (1).

Here, k1, k2 and k3 represent the torsional rigidity at the first, second and third rotary support shafts 13a, 13b and 13c, respectively, and I1, I2 and I3 represent the torsional rigidity at the second connection link 14b and the third M1, m2 and m3 represent the moment of inertia of the connecting link 14c, the moment of inertia of the fourth connecting link 14d and the moment of inertia of the sensor mass 11, The mass of the link 14c, the mass of the fourth connection link 14d, and the mass of the sensor mass 11, respectively. Also,

The position of the center of gravity of the second connection link 14b and the third connection link 14c with respect to the first rotary support shaft 13a,

The position of the center of gravity of the fourth connection link 14d with respect to the second rotation support shaft 13b,

Indicates the position of the center of gravity of the sensor mass 11 with reference to the third rotation support shaft 13c. And a is an external acceleration acting in the z direction.

The mass m1 and the moment of inertia I1 of the second and third connection links 14b and 14c and the mass m2 of the fourth connection link 14d and inertia moment I3 of the sensor mass 11 and the inertia moment I3 of the sensor mass 11, The moment I2 has a relatively small value. Therefore, m1, m2 and I1 and I2 in the equation (1) can be assumed to be substantially zero. In this case, equation (1) may be simplified to equation (2).

The distance from the sensor mass 11 through the sensing electrode 16 disposed on the bottom wafer 15 can be expressed by the following equation (1) or (2) It is possible to further obtain a relational expression between? 1,? 2 and? 3. Assuming that the distance between the end of the sensor mass 11 and the bottom electrode 16 is h and the height of the first rotary support shaft 13a with respect to the bottom wafer 15 is H, Equation 3 holds.

Here, L1 represents the length of the second and third connection links 14b and 14c, L2 represents the length of the fourth connection link 14d, and L3 represents the length of the sensor mass 11. As a result, both of θ1, θ2, θ3, and a can be determined through a total of four mathematical equations obtained from Equations (1) and (3) or Equations (2) and (3).

7 shows the arrangement of the sensing electrodes 17a and 17b according to another embodiment of the present invention. 7, the differential sensing electrodes 17a and 17b are disposed before and after the effective rotation axis C-C 'of the sensor mass 11, unlike FIG. The differential sensing electrode is an electrode capable of simultaneously sensing the linear vibration displacement and the rotational vibration angle of the sensor mass, and is used as a pair of two electrodes. These differential sensing electrodes should be equally spaced on both sides of the axis of rotation of the rotating object. Accordingly, although the differential sensing electrodes 17a and 17b are disposed on the front and rear sides of the rotation axis of the sensor mass 11 in FIG. 7, it is difficult for the rotation axis to be determined as one due to the characteristics of this embodiment having three rotation support axes. However, if the rotation angle is in a certain range, the virtual effective rotation axis C-C 'is positioned between the second rotation support shaft 13b and the third rotation support shaft 13c. For example, The two differential sensing electrodes 17a and 17b are positioned at the center of the second rotation support shaft 13b and the third rotation support shaft 13c with the effective rotation axis C-C ' Can be arranged before and after the second lens group. The position of the effective rotation axis C-C 'may be adjusted in consideration of the torsional rigidity of the second rotation support shaft 13b and the torsional rigidity of the third rotation support shaft 13c. That is, at the central positions of the two support shafts 13b and 13c, the effective rotation axis C-C 'will be closer to the rotation support shaft having a strong torsional rigidity.

FIG. 8 is a plan view showing the arrangement of the electrodes 16, 17a, 17b in the z-axis MEMS acceleration sensor 20 according to an embodiment of the present invention. Referring to FIG. 8, the differential sensing electrodes 17a and 17b are disposed before and after the effective rotation axis C-C 'in the x direction. These differential sensing electrodes 17a and 17b may be arranged in pairs in the y-axis direction on the upper side and the lower side, respectively, for the sake of detection accuracy. A single sensing electrode 16 may be disposed on the right side of the sensor mass 11 in addition to the differential sensing electrodes 17a and 17b. Only one of the differential sensing electrodes 17a and 17b and the single sensing electrode 16 may be used, or may be used together for the accuracy of sensing.

9 is a D-D 'cross-sectional view of the z-axis MEMS acceleration sensor 20 of Fig. The sensor masses 11 of the z-axis MEMS acceleration sensor 20 of Fig. 8 are in the internal space between the bottom wafer 15 and the cap wafer 30 surrounded by the sealing walls 22, 24 and 26. The sealing walls 22, 24, 26 are one wall that blocks the inside and outside of the z-axis MEMS acceleration sensor. The sensing electrodes 16, 17a and 17b are n or p doped electrodes for measuring the z-direction spacing variation of the sensor mass 11 doped with boron or phosphorus in the wafer substrate 15. [ The sensing electrodes 16, 17a and 17b may be implemented as a comb electrode or a plate electrode. Columns 28 and 29 are provided between the cap wafer 30 and the anchor 12 to disperse vibration energy of the sensor mass 11 into the bottom wafer 15 and the cap wafer 30, respectively.

10 is a plan view of a z-axis MEMS acceleration sensor 40 according to another embodiment of the present invention. The z-axis MEMS acceleration sensor 40 is different from that of FIG. 3 only in that a round reinforcing portion is formed at a corner where stresses are concentrated at the connection links 14a ', 14b', 14c ', and 14d' . As a result, as compared with the conventional z-axis MEMS acceleration sensor 10, it is possible to further reduce stress concentration by forming a round reinforcing portion at a corner portion where stress is concentrated, together with a stress distribution effect by three axes. This round reinforcement may be applied to all of the connecting links 14a ', 14b', 14c ', 14d' and may be applied to only some of the connecting links.

11 is a plan view of a z-axis MEMS acceleration sensor 50 according to another embodiment of the present invention. In the present embodiment, the z-axis MEMS acceleration sensor 50 has a structure including the anchor 12, the rotation support shafts 13a, 13b, and 13c, and the connection links 14a, 14b, 14c, and 14d 52, and 54 are arranged in the y-axis direction. Since the vertical symmetrical structure can reduce the uniform distribution of the load during the external vibration of the sensor mass 11, it is advantageous in that the unnecessary movement in the x-direction can be reliably suppressed as compared with the case where only one structure is used have.

In the above description, three rotary support shafts of the z-axis MEMS acceleration sensor are used as an example. However, the present invention is not limited to this, and two or more rotation support shafts may be used. However, if the rotation support shaft is excessively used, the structure becomes complicated and the longitudinal displacement of the sensor mass becomes large, so that the MEMS acceleration sensor may be increased in the vertical direction. Hereinafter, an embodiment using two rotation support shafts will be described with reference to Figs. 12 and 13. Fig.

12 is a plan view showing a z-axis MEMS acceleration sensor 60 having two rotation support shafts. The z-axis MEMS acceleration sensor 60 is provided with a plurality of rotation support shafts, particularly two rotation support shafts 33a and 33b, which provide a support force by torsional rigidity unlike the prior art. Accordingly, at least two connecting links connecting the anchor 12 and the rotary support shafts 33a and 33b are required.

More specifically, the first connection link 34a connects the fixed anchor 12 to the first rotation support shaft 33a, and the second connection link 34b and the third connection link 34c connect the first rotation support shaft 33a, And both ends of the first rotation support shaft 33a and one side of the second rotation support shaft 33b are connected to each other. In this case, the first rotary support shaft 33a is connected only to the connection links 34a, 34b and 34c, while the second rotary support shaft 33b is connected to the sensor mass 11 as well as the connection link 34d. As shown in Fig. Therefore, the second rotary support shaft 33b is first subjected to torque when the sensor mass 11 rotates, and this torque is transmitted to the first rotary support shaft 33a through the corresponding connection links 34a and 34b.

As a result, when the sensor mass 11 rotates due to the external acceleration, there are two rotation support shafts 33a and 33b supporting the twisting due to the external acceleration, so that the rotation torque is dispersed in the respective rotation support shafts 33a and 33b It is effective. Therefore, the stress applied to each of the rotation support shafts 33a and 33b and the stress at the corner portions where the rotation support shafts 33a and 33b meet the connection links 34a, 34b, and 34c, .

FIG. 13 is a cross-sectional view of the z-axis MEMS acceleration sensor 60 of FIG. 12 taken along the line E-E '. When the external acceleration acts in the z-axis direction, the sensor mass 11 rotates downward (in the clockwise direction) by the rotation inertia of the sensor mass 11. At this time, the rotation angles? 1 and? 2 are formed in the two rotation support shafts 33a and 33b in accordance with the respective torsional stiffnesses. As a result, the sensor mass 11 is not a complete rotational motion for one axis but has both a rotational motion component and a linear motion component. At this time, the sensing electrode 16 provided on the bottom wafer 15 senses the displacement of the sensor mass 11 based on the change in the capacitance due to the approach of the sensor mass 11. Based on this displacement, an external acceleration acting on the sensor mass 1 can be calculated.

11: Sensor mass
12: Anchor
13a, 13b, 13c, 33a, 33b:
14a, 14b, 14c, 14d, 14a ', 14b', 14c ', 14d', 34a, 34b,
15: bottom wafer
16: Single sensing electrode
17a and 17b: a differential sensing electrode
20, 40, 60: z axis MEMS acceleration sensor
22, 24, 26: sealing wall
30: cap wafer

Claims

And a plurality of rotation support shafts disposed parallel to the bottom wafer substrate and having relative rotational movements relative to two or more rotation support shafts parallel to the bottom wafer when an external acceleration is input in a direction perpendicular to the bottom wafer substrate, And the other end of the sensor mass is connected to one of the at least two rotation support shafts;
The at least two rotary support shafts having torsional rigidity to provide a restoring force against rotational movement of the sensor mass; And
And at least one sensing electrode sensing at least one of a vertical linear displacement or a rotational displacement of the sensor mass.

The method according to claim 1,
Wherein the at least two axes are connected to a fixed anchor having no motion, a second shaft coupled to the first shaft by a rigid first connection link, and a second shaft coupled to the second shaft by a rigid second connection link. And a third axis connected to the sensor mass, wherein the first axis, the second axis, and the third axis are spaced apart from each other and arranged in parallel.

3. The method of claim 2,
The first axis, the second axis, and the third axis are located together in a plane parallel to the bottom wafer substrate when the external acceleration does not act, and when the external acceleration acts, the first axis, Axis and at least one of the third axis is not located in the plane.

The method of claim 3,
And a rounded corner reinforcement portion for reducing stress concentration is formed at a point where the first connection link and the second connection link meet any one of the first, second, and third axes.

The method according to claim 1,
Wherein the two or more axes include a first axis connected to a fixed anchor having no motion and a second axis coupled to the first axis and a rigid connection link and connected to the sensor mass, The MEMS-based vertical acceleration sensor has axes spaced apart in parallel.

6. The method of claim 5,
The first axis and the second axis are located together in a plane parallel to the bottom wafer substrate when the external acceleration does not act and when the external acceleration acts, Non-positioned MEMS-based vertical acceleration sensor.

The method according to claim 1,
Wherein the at least one sensing electrode is a MEMS-based vertical sensing electrode that is symmetrically disposed about an imaginary effective axis that can be obtained from the torsion spring stiffness acting on the at least two axes and the spacing between the at least two axes. Direction acceleration sensor.

The method according to claim 1,
Wherein the at least one sensing electrode is a single sensing electrode that is disposed at a larger motion of the sensor mass and senses the motion when the sensor mass has the rotational motion.