KR101673236B1 - The wearable light-emitting element having a light emitting diode inside fiber layers and its preparing method - Google Patents
The wearable light-emitting element having a light emitting diode inside fiber layers and its preparing method Download PDFInfo
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- KR101673236B1 KR101673236B1 KR1020150157302A KR20150157302A KR101673236B1 KR 101673236 B1 KR101673236 B1 KR 101673236B1 KR 1020150157302 A KR1020150157302 A KR 1020150157302A KR 20150157302 A KR20150157302 A KR 20150157302A KR 101673236 B1 KR101673236 B1 KR 101673236B1
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- nanofiber membrane
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Classifications
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- H01L51/50—
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- H01L27/304—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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Abstract
The present invention relates to a wearable light emitting device in which a light emitting diode is embedded in a fiber and a method of manufacturing the same. More particularly, the present invention relates to a wearable light emitting device having a light emitting diode The present invention relates to a wearable light emitting device and a method of manufacturing the same, and is environmentally friendly and economical.
Description
The present invention relates to a wearable light emitting device having a light emitting diode embedded in a fiber and a method of manufacturing the same. More particularly, the present invention relates to a wearable light emitting device having a light emitting diode including a light emitting layer of a metal oxide- To a wearable light emitting device and a method of manufacturing the same.
BACKGROUND ART [0002] In recent years, many researches have been made in order to develop wearable electronic devices. For example, in order to replace the existing next-generation electronic device materials, it is necessary to develop a wire-type material instead of a flat surface, and to make it into a fiber.
However, there is a great difficulty in laminating the light emitting device on the nanofiber fabric itself. Therefore, there have been reported research examples in which transparent and flexible nanofibers are adhered to a photonic device including a light emitting device by using a polymer having excellent adhe- sion.
Zhiqiang Fang and his colleagues used wood fibers extracted from wood to make a transparent paper with a better transparency than ordinary PET and nano paper through a TEMPO-oxidizing process. Based on this, a cross- And the characteristics of the device were evaluated. [Zhiqiang Fang et al, Nano Lett. 2014, 14, 765-773]
In addition, Zhi-Qiang Fang confirmed the efficiency by increasing the absorption bandwidth of the solar cell by depositing cellulose fibers having high transmittance haze on a flexible substrate and scattering light incident on the substrate. Zhi-Qiang Fang et al, SCIENTIFIC REPORTS, 4: 5842, DOI: 10.1038 / srep05842]
Jaehong Lee and colleagues also developed KBS-based SBS / silver nanoparticle fibers by coating poly (styrene-block-butadienstyrene) (SBS) on Kevlar fibers and coating the silver nanoparticle precursor on the SBS surface , And finally Polydimethylsiloxane (PDMS) was coated and crossed to fabricate a sensor with a piezoelectric effect. The sensor was directly weaved with gloves and cloth to check its characteristics. To evaluate the performance of the sensor, And finally confirmed the movement of the robot through the sensor [Jaehong Lee et al, Adv. Mater. 2015, 27, 2433-2439]
On the other hand, Japanese Patent Application Laid-Open No. 2002-258775 discloses that at least a first insulating thin film, a second fluorescent substance thin film, a third insulating thin film, and a light transmitting conductive thin film are sequentially formed on the surface of a conductive linear material, And a switching element for applying a signal for light emission to an arbitrary position of the fiber-shaped light-emitting body are arranged in a woven-fabric type A technique of realizing a display device capable of being processed and adapted to a flexible and arbitrary shape has been proposed.
Japanese Laid-Open Patent Publication No. 2012-227153 discloses a flexible light emitting device that is strong and resistant to external impact and a method of manufacturing the flexible light emitting device. The light emitting device is formed by piling a structure made by impregnating a fibrous body with an organic resin between a pair of flexible boards The thin film transistor having the first element forming layer and the second element forming layer and formed in the first element forming layer and the light emitting element formed in the second element forming layer are formed in a desired position inside the structure in which the organic material is impregnated into the fibrous body And is electrically connected through a conductor.
However, in the case of the known flexible light emitting device or the invention relating to the light emitting device as described above, the flexibility and transparency of the fiber, which is an important technology for manufacturing a wearable electronic device, and the simplification of the process, and the environmentally friendly and economical There is a problem that it is difficult to put it into practical use because it is a technology that can not be considered properly.
In order to solve the problems of the prior art as described above, the present invention is to provide a wearable electronic device, particularly a light emitting device, which is newly formed of materials and manufacturing methods, so that flexibility and transparency of the fiber are improved, It is an object of the present invention to provide a wearable light emitting device which is economically advantageous and has excellent light emitting characteristics.
Accordingly, an object of the present invention is to provide an environmentally friendly wearable light emitting device manufactured by embedding a light emitting diode having excellent light emitting effect inside a natural fiber material.
Another object of the present invention is to provide a method for manufacturing a wearable light emitting device that can be economically manufactured by incorporating a light emitting diode into a transparent and flexible natural fiber material using a thermosetting resin.
In order to solve the above-described problems, the present invention is characterized in that a light emitting diode including a core-shell quantum dot of a metal oxide-graphene as a light emitting layer is embedded between a natural keratin derivative-PVA-based nanofiber membrane A wearable light emitting device is provided.
In addition,
Preparing a nanofiber membrane with a natural keratin-PVA mixture;
Preparing a quantum dot having a core-shell structure of a metal oxide-graphene;
Forming a light emitting layer on the substrate using the quantum dot and fabricating a light emitting diode having electrodes; And
Coating the adhesive polymer on both surfaces of the light emitting diode, and attaching the nanofiber membrane to both surfaces of the LED. The present invention also provides a method of manufacturing the wearable light emitting device.
According to the present invention, since the fiber material used for the wearable light emitting device is made of naturally-occurring keratin-based nanofiber, unlike the conventional method for producing a fabric through a TEMPO-oxidizing process for cellulose, which is a constituent of wood, Can be easily obtained from human hair, nails, wool, feathers, animal hair, eggs, etc., so it is more environmentally friendly and economical than any material.
Further, since the light emitting diode used in the wearable light emitting device of the present invention uses quantum dots of the nucleus-shell structure of metal oxide-graphene as the light emitting layer as its active layer, the manufacturing process is simple and economical, It is economically advantageous and has many advantages in practical use.
Particularly, since the wearable light emitting device of the present invention is made of natural fibers and has excellent light transmittance, if the light emitting diode is embedded in the transparent nanofiber to be fused together with the coating, the wearable light emitting device can be widely applied to a technique capable of realizing a wearable display It is effective.
FIG. 1 is a schematic view showing a process for producing a natural keratin-PVA nanofiber used in the present invention.
FIG. 2A is a diagram illustrating a structure of a light emitting diode device for a zinc oxide-graphene light emitting diode according to an embodiment of the present invention.
FIG. 2B is an illustration of a wearable light emitting device in which the light emitting diode structure of FIG. 2A is embedded between nanofiber membranes according to an embodiment of the present invention, wherein PVP is coated on the upper layer and transparent nanofibers And the lower layer is coated with epoxy and laminated with transparent nanofibers.
FIG. 3 is a photograph of an actual example of a wearable light emitting device manufactured according to the present invention, which is based on a nanofiber membrane of natural keratin-PVA and incorporates a zinc oxide-graphene-containing light emitting diode, There are no nanofibers in the state. On the right is a photograph showing the nanofiber attached.
FIG. 4 is a diagram illustrating an energy diagram of a light emitting device including a light emitting layer of a zinc oxide-graphene quantum dot, which is an embodiment of a light emitting device according to the present invention.
FIG. 5 is a graph showing an electroluminescence (EL) measurement of a light emitting device in which a zinc oxide-graphene quantum dot, which is an embodiment of a light emitting device to which the present invention is applied, is composed of a light emitting layer.
FIG. 6 is a graph showing the photoluminescence efficiency of a wearable light emitting device containing a zinc oxide-graphene light emitting layer embedded between nanofiber membrane-based fibers of natural keratin-PVA, which is an embodiment of the wearable light emitting device manufactured according to the present invention This is an illustration of the experiment.
Hereinafter, the present invention will be described in more detail as an embodiment.
The terms used in the description of the present invention are used only for describing specific embodiments and are not intended to limit the present invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. It is to be understood that the terms "comprises" or "having ", etc. in the specification are intended to specify the presence of stated features, integers, steps, operations, elements, parts, or combinations thereof, And does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
The present invention relates to a wearable light emitting device manufactured by embedding a light emitting diode based on a zinc oxide-graphene quantum dot between a nanofiber membrane formed by fiberizing a natural keratin derivative-PVA (polyvinylalcohol) with an adhesive polymer .
According to a preferred embodiment of the present invention, a natural keratin derivative-PVA is mixed with a natural keratin derivative and PVA by using a nanofiber membrane made by fiberization of the natural keratin derivative-PVA, for example, electrospinning; 0.5 to 1.5 weight ratio, and electrospun to prepare a nanofiber membrane. The nanofiber membrane used herein may be a fabric or a nonwoven fabric.
According to a preferred embodiment of the present invention, a light emitting diode including a core-shell quantum dot of a metal oxide-graphene as a light emitting layer is embedded between nanofiber membranes of the natural keratin-PVA.
According to a preferred embodiment of the present invention, the core-shell quantum dot of the metal oxide-graphene used in the light emitting diode is preferably zinc oxide-graphene oxide.
According to a preferred embodiment of the present invention, a light emitting diode including a nucleus-shell quantum dot of a metal oxide-graphene as a light emitting layer includes a substrate, a hole injecting layer, a hole transporting layer, a PEIE (polyethoxylate ethanolate) . ≪ / RTI >
According to a preferred embodiment of the present invention, the substrate is made of a material suitable for manufacturing a wearable light emitting device, and the light emitting diode itself is embedded inside the fiber. Therefore, the light emitting diode is lightly bent It is necessary to combine functions that can be achieved. In order to realize this, some conditions must be satisfied in order to implement a wearable or flexible device. That is, a plastic substrate material is mainly used because of ease of processing, weight, material cost, suitability to a manufacturing process, etc., and a variety of alternative substrate materials developed recently can be applied. For example, it may be selected from among Polyimide (PI), Fiber Reinforced Plastic (FRP), Polycarbonate, PET, Polyethersulfone (PES), Polyneylene Phthalate (PEN) and Metal Foil.
According to a preferred embodiment of the present invention, PET having a low melting temperature, low manufacturing cost, excellent chemical resistance, and low hygroscopicity can be preferably used, and a PET substrate coated with ITO can be preferably used.
According to a preferred embodiment of the present invention, the light emitting diode may have a structure of a substrate / a hole injecting layer / a hole transporting layer / a PEIE (polyethoxylate ethanolate) / a light emitting layer / an electron transporting layer / (PET), poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate), and the hole transport layer is poly-TPD (poly (N, N'- (1,3,5-tris (N-phenylbenzimidazole-2-yl) N, N'-bis (phenyl) benzidine)] is used as the light emitting layer, metal oxide- benzene) may be used, and an aluminum (Al) electrode may be used as the electrode.
According to a preferred embodiment of the present invention, an adhesive polymer layer may be formed on both surfaces of the substrate of the light emitting diode, and each of the adhesive polymer layers may be bonded to the nanofiber membrane.
According to a preferred embodiment of the present invention, for example, an epoxy resin may be used as an adhesive polymer between the substrate and the nanofiber membrane, that is, on the side from which light is emitted, and between the electrode and the nanofiber membrane, For example, PVP (polyvinylpyrrolidone) can be preferably used as the adhesive polymer so as to avoid damage to the substrate and prevent deterioration.
A manufacturing method of the wearable light emitting device having the above-described structure according to the present invention will be described in detail as follows.
According to a preferred embodiment of the present invention, natural keratin used in the step of producing a nanofiber membrane with a natural keratin-PVA mixture is different from a fabric in which cellulose, which is a constituent of a conventional wood, is manufactured through a TEMPO-oxidizing process, Hair, nails, wool, feathers, animal hair, eggs and so on, so that it can be used as an eco-friendly and economical material than any other material.
According to a preferred embodiment of the present invention, the natural keratin derivative, which is a protein extracted from a natural material or a low-molecular-weight chitosan, is prepared as a water-soluble solution, and a polyvinyl alcohol aqueous solution is added thereto. 0.5 to 1.5 weight ratio, and then the mixture is electrospun to prepare a water-insoluble nanofiber membrane, which is then water-soaked and dried to form a transparent nanofiber membrane.
The process for producing such a natural keratin-PVA nanofiber membrane is, for example,
Process for producing a natural protein water-soluble solution or a low-molecular-weight chitosan aqueous solution:
Adding a polyvinyl alcohol aqueous solution and glyoxal to the aqueous solution to prepare a spinning solution;
Fabricating a nanofiber membrane using the spinning solution;
Immersing the nanofiber membrane in an alkaline atmosphere to render it water insoluble; And
Process of immersing the water-immobilized nanofiber membrane in water and drying
. ≪ / RTI >
FIG. 1 is a schematic view showing a process of producing the natural keratin-PVA nanofibers according to the present invention.
As the metal oxide used in the step of preparing the quantum dot having the core-shell structure of the metal oxide-graphene applied to the light emitting device, for example, TiO 2, Nb-TiO 2, Sb-TiO 2, SnO 2, ZnO, In 2 O 3, CuO, MgZnO (MgO), In1-x (SnO2) x (0 <x <0.15, ITO), Ga2O3, BeO and F-SnO2 may be used.
The quantum dot of the core-shell structure of the metal oxide-graphene used in the present invention can be prepared by a conventional method using a metal oxide and a graphite powder.
Forming a light emitting layer on the substrate using the quantum dot and fabricating a light emitting diode having electrodes.
According to a preferred embodiment of the present invention, ITO is coated on PET having a low melting temperature, low manufacturing cost, excellent chemical resistance, and low hygroscopicity and is used as a substrate. PEDOT: PSS (poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate)) is used as the hole transport layer and poly-TPD (poly (N, N'- ) benzidine)]) can be formed by spin coating, and PEIE, which is an inductive dipole polymer that acts as an electrostatic support for the electron buffer layer and the quantum dots, is coated and the nucleus-shell quantum dots of the metal oxide-graphene are coated with the light emitting layer Next, a light emitting diode can be manufactured by spin coating TPBi used as an electron transporting layer and forming an aluminum electrode, for example. Thus manufactured, for example, a light emitting diode having a structure composed of a substrate / hole injection layer / hole transporting layer / PEIE / light emitting layer / electron transporting layer / electrode can be manufactured.
The wearable light emitting device of the present invention can be manufactured through the steps of coating an adhesive polymer on both surfaces of the LED and attaching the nanofiber membrane to both surfaces of the LED.
According to a preferred embodiment of the present invention, for example, an epoxy resin is applied to a substrate surface between the substrate and the nanofiber membrane, that is, on the side from which light is emitted, and a nanofiber membrane is attached to the substrate and dried. For example, PVP (polyvinylpyrrolidone) is added to the electrode part, and then a nanofiber membrane is attached and dried to manufacture a wearable light emitting device in which a light emitting diode is embedded in the nanofiber.
According to the present invention, a wearable light emitting device is manufactured by embedding a zinc oxide-graphene quantum dot-based light emitting diode in a fabric made by fiberizing a natural keratin derivative-PVA as described above by using PVP and epoxy, It is possible not only to prevent the degradation thereof but also to use it together with the coating.
In particular, the present invention is advantageous in terms of processing because it is very economical, eco-friendly, and mass-producible because it is produced on the basis of natural keratin.
In addition, according to the present invention, since a light emitting diode having a zinc oxide-graphene quantum dot as an active layer is fabricated by using a human-based fiber to produce a fabric, the reproducibility in the fabrication process is also excellent and economical.
As described above, the present invention can be used in combination with coating by fabricating a wearable light emitting device by applying nanofibers excellent in transparency and flexibility to a flexible light emitting diode, and using natural keratin in the case of the used nanofibers Therefore, it can exhibit excellent transparency and flexibility, which can minimize environmental pollution, reduce manufacturing cost and energy, and simplify the manufacturing process by recycling human hair, railing, and wool. Also, since the metal oxide-graphene having a nucleus-shell structure used as an active layer of a light emitting diode can be manufactured by a very simple manufacturing process and can be economically manufactured, it is an excellent process having a possibility of mass production and is excellent in reproducibility and can be practically used.
Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited to the Examples.
Example
(1) Preparation of natural keratin-PVA nanofiber membrane
A natural protein (keratin derivative) was extracted from the hair and then dissolved in water to prepare a water-soluble solution of a natural protein (keratin derivative). Next, a polyvinyl alcohol aqueous solution was added to the natural protein water-soluble solution at a weight ratio of 50:50, and 1.5 parts by weight of glyoxane was added thereto to prepare a spinning solution.
Next, the spinning solution was electrospun to prepare a nanofiber membrane, and the subsequently prepared nanofiber membrane was allowed to stand for 24 hours under an alkaline atmosphere (ethanol atmosphere) at 50 DEG C to prepare a water-insoluble nanofiber membrane .
Next, the water-insoluble nanofiber membrane was immersed in water and dried to prepare a transparent nanofiber membrane.
(2) Preparation of zinc oxide-graphene quantum dot
Before making zinc oxide-graphene core-shell quantum dots, oxide graphene should be made. Graphite powder and H2SO4 / H2O + HNO3 / H2O were mixed at a constant ratio, sonicated for about 1 hour and left for 5 days. After centrifugation using DI water, put it in oven (80 ℃) and remove water for 3-4 days.
After that, 400 mg of acid-treated graphite oxide and 400 ml of dimethylformamide were added and dispersed for 10 minutes through a sonicator. The solution was reacted with 2 L of zinc acetate dehydrate 18.4 g / Dimethylformaide at 130 ° C for 5 hours at 270 rpm. Is made. After that, they were washed with ethanol and distilled water using a
(3) Fabrication of natural keratin-PVA fabric-based zinc oxide-graphene LED light-emitting diode
The PEDOT: PSS (Poly (3,4-ethylenedioxythiophene)), which is used as a hole injection layer after UV-Ozone treatment for an appropriate time, is applied to a PET substrate coated with ITO, which is a substrate of a diode itself, A solution of poly [N, N'-bis (4- (4-fluoro-4-methoxyphenol)] was used as the hole transport layer, and the solution was heated to 110 ° C. for 30 minutes. N, N'-bis (phenyl) -benzidine] was dissolved in Clorobenzene and dried in the same manner in N2 atmosphere. Then, Polyethyleneimine ethoxylate (PEIE), which acts as an electrostatic buffer for the electron buffer layer and quantum dots, The coating was applied for 10 minutes by the same method as above, coated with zinc oxide-graphene dispersed in an organic solvent, and heat-treated for 10 minutes, and TPBi [2, 2 , 1 - phenyl - 1 - H - benzimidazole] was dissolved in methanol and heat - treated at the appropriate temperature for 10 min in the same manner as described above to form the electrode of the diode LiF / Al is deposited to a thickness of 1 nm / 100 nm by thermal evaporation to fabricate a light emitting diode.
The thus fabricated light emitting diode has a structure as shown in FIG. 2A. FIG. 2A is a schematic view of a zinc oxide-graphene light emitting diode structure according to an embodiment of the present invention.
In order to incorporate the light emitting diode fabricated as described above into a nanofiber membrane (fabric), the nanofiber fabric swelled while being immersed in water and then transparent was dried at room temperature, and then the epoxy solution was dropped on the back surface of the light emitting diode A gold wire was used to attach the woven nanofiber fabric and to remove the electrode from the outside in a fully dried state. The silver paste was dropped on the deposited electrode surface, and the gold wire was placed on the deposited electrode. And then a transparent nanofiber fabric was attached and dried to fabricate a wearable light emitting device.
The structure of the wearable light emitting device thus fabricated is as shown in FIG.
FIG. 2B is an illustration of a wearable light emitting device in which the light emitting diode structure of FIG. 2A is embedded between nanofiber membranes, in which the upper layer is coated with PVP, the transparent nanofibers are stacked thereon, Coated with epoxy and laminated with transparent nanofibers.
FIG. 3 is a photograph of a light emitting diode fabricated as described above and a wearable light emitting device manufactured by embedding the light emitting diode in the nanofiber fabric.
In FIG. 3, a nanofiber membrane based on natural keratin-PVA is shown, and a zinc oxide-graphene-containing light emitting diode is embedded therein. Here, on the left, there is no nanofiber, to be.
Experimental Example: Experimental Results and Mechanism of Light Emitting Device
PEDOT: PSS serves as a hole injecting layer, and Poly-TPD serves as a hole transporting layer by using ITO as a positive electrode on a PET substrate, and serves as a support for electrostatic coupling between a charge buffer layer and zinc oxide-graphene by PEIE . TPBi is used as an electron transport layer. Electrons injected through LiF / Al (cathode) and holes from ITO are transport layers, respectively. Through a hopping mechanism, a diode, which is formed by recombination of holes and electrons in the zinc oxide- .
In order to examine the physical properties of the light-emitting diode having the active layer as the light-emitting layer, the results of measuring the energy diagram are shown in FIG. FIG. 4 is an energy diagram of a light emitting diode in which zinc oxide-graphene quantum dots are composed of a light emitting layer.
In order to confirm the luminescence characteristics of the light emitting diode, electroluminescence was measured.
FIG. 5 is a graph showing an electroluminescence (EL) measurement of a light emitting device in which a zinc oxide-graphene quantum dot, which is an embodiment of a light emitting diode employed in the present invention, is composed of a light emitting layer. As a result, two field emission peaks of 428 nm (2.89 eV) and 450 nm (2.74 eV) were observed as shown in FIG.
Meanwhile, the light emitting efficiency of the wearable light emitting device manufactured as described above was measured, and the results are shown in FIG.
FIG. 6 is a graph showing a curve experiment for measuring the photoluminescence efficiency of a wearable light emitting device including a zinc oxide-graphene light emitting layer embedded between nanofiber membrane-based fibers of natural keratin-PVA, which is the wearable light emitting device.
According to the present invention, since the wearable light emitting device manufactured by the present invention uses the quantum dots of the nucleus-shell structure of the metal oxide-graphene, the fabrication process is simple and economical, and it is environmentally friendly and has a possibility of mass production It can be widely put to practical use where a flexible light emitting element is required in many economical terms.
Particularly, since the wearable light emitting device of the present invention is made of natural fibers and has excellent light transmittance, if a light emitting diode is embedded in the transparent nanofiber to fuse together with the coating, the wearable light emitting device can be widely applied to a technology capable of realizing a wearable display Do.
Claims (10)
The light emitting diode including the nucleus-shell quantum dot of the metal oxide-graphene as a light emitting layer has a structure of a substrate / a hole injecting layer / a hole transporting layer / a PEIE (polyethoxylate ethanolate) / a light emitting layer / an electron transporting layer /
The substrate is a PET (polyethylene terephthalate) substrate coated with ITO (Indium Tin Oxide). The hole injection layer is made of PEDOT: PSS (poly (3,4-ethylenedioxythiophene) (Zn) -grapeine quantum dot as the light emitting layer and TPBi (1,3,5) as the electron transporting layer as the light emitting layer, and the poly (N, N'-bis (4-butylphenyl) -N, N'- -tris (N-phenylbenzimiazole-2-yl) benzene), and the electrode is an aluminum (Al) electrode.
Preparing a quantum dot having a core-shell structure of a metal oxide-graphene;
Forming a light emitting layer on the substrate using the quantum dot and fabricating a light emitting diode having electrodes; And
Coating an adhesive polymer on both surfaces of the light emitting diode and attaching the nanofiber membrane to both surfaces of the light emitting diode,
The step of forming a light emitting layer on a substrate using a quantum dot and fabricating a light emitting diode having an electrode includes the steps of coating ITO (Indium Tin Oxide) on PET (polyethylene terephthalate) and forming a substrate thereon. PEDOT: PSS (poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate)), poly-TPD (poly (N, N'-bis ) Are coated by spin coating, and PEI (Polyethoxylate Ethanolate), an induction dipole polymer, is coated and the nucleus-shell quantum dots of the metal oxide-graphene are coated with the light emitting layer. Then, TPBi (1,3,5-tris A hole injection layer / a hole transport layer / a PEIE / light emitting layer / an electron transport layer / an electrode is formed by spin coating an N-phenylbenzimiazole-2-yl) Gt;
Process for producing a natural protein water-soluble solution or a low-molecular-weight chitosan aqueous solution:
Adding a polyvinyl alcohol aqueous solution and glyoxal to the aqueous solution to prepare a spinning solution;
Fabricating a nanofiber membrane using the spinning solution;
Immersing the nanofiber membrane in an alkaline atmosphere to render it water insoluble; And
Process of immersing the water-immobilized nanofiber membrane in water and drying
Wherein the light emitting device comprises a light emitting diode.
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