KR101672648B1 - Antireflection coating layer using nano-structure for solar cell device and its production method - Google Patents

Antireflection coating layer using nano-structure for solar cell device and its production method Download PDF

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KR101672648B1
KR101672648B1 KR1020150119147A KR20150119147A KR101672648B1 KR 101672648 B1 KR101672648 B1 KR 101672648B1 KR 1020150119147 A KR1020150119147 A KR 1020150119147A KR 20150119147 A KR20150119147 A KR 20150119147A KR 101672648 B1 KR101672648 B1 KR 101672648B1
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nanostructure
layer
solar cell
thin film
nanostructure layer
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원상혁
최경진
박민주
강성범
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울산과학기술원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Abstract

An objective of the present invention is to provide an anti-reflection film for a solar cell using a nano-structure having low surface reflectance obtained through density adjustment of the nano-structure, in which manufacturing costs are low. To achieve the above objective, the anti-reflection film for the solar cell using the nano-structure formed on a solar cell panel surface according to the present invention includes: a thin film layer formed on the solar cell panel surface; a first nano-structure layer formed on an upper end of the thin film layer and including a dense nano-structure; and a second nano-structure layer formed on an upper end of the first nano-structure layer and including a porous nano-structure.

Description

TECHNICAL FIELD The present invention relates to an antireflection coating layer using a nanostructure and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antireflection film for a solar cell using a nanostructure and a manufacturing method thereof, and more particularly, to an antireflection film for a solar cell using a nanostructure that improves light transmittance while lowering the light reflectance of a solar cell, .

In order to reduce reliance on fossil fuels worldwide, research and development on alternative energy and clean energy, which are new energy sources that do not cause exhaustion without adversely affecting the environment, are actively under way.

At one time, nuclear power was developed as a viable alternative energy and showed a high contribution, but it is gradually decreasing its reliance on it due to instability and serious damage caused by accidents, The solar power generation system that converts solar energy into electricity using solar cells is becoming more popular as a practical application.

A solar cell is a semiconductor device that converts solar energy directly into electric energy. It has a form of p-type and n-type semiconductor junctions. Its basic structure is similar to diodes and has been proposed and utilized in various structures.

For example, in Japanese Patent No. 1541657, in a solar cell having a selective emitter structure, the purpose of suppressing a positional shift between an n + -type diffusion layer having a high n-type impurity concentration directly below an electrode and an electrode is proposed, And an n + -type diffusion layer having a higher n-type impurity concentration than the n-type diffusion layer, wherein the surface of the n + -type diffusion layer has a concave portion.

In addition, Japanese Laid-Open Patent Publication No. 2014-0057189 discloses a method of manufacturing a solar cell element having a p-type diffusion layer-forming composition containing a boron nitride, a dispersion medium, and an inorganic binder, and a p-type diffusion layer.

Japanese Patent No. 1149768 discloses a method for producing a III-V compound solar cell based on a silicon substrate, comprising the steps of: a) etching a surface, heating the substrate to a predetermined temperature preset in an organometallic chemical vapor deposition reaction tube, Providing a silicon substrate having properties; b) forming a seed layer of a III-V compound on the silicon substrate provided in the step a), depositing a metal electrode and a dielectric layer thereon, patterning the deposited electrode and the dielectric layer, Growing the III-V compound into a rod-shaped solar cell by controlling the temperature and pressure of the deposition reaction tube; And c) forming a transparent electrode on the outside of the solar cell cell of the III-V compound grown selectively as a vertical bar according to the patterning in the step b) so that the sheet resistance is reduced. Lt; / RTI >

In addition to the structure for enhancing the characteristics of the device itself, the structure for reducing the reflectance of the surface of the solar cell element to increase the overall efficiency is an anti-reflection film. Conventional antireflection films use a single-layer insulator thin film, and at this time, it is common to form an antireflection film confined to a single target wavelength through the control of the thickness of the thin film. However, have.

In addition, a conventional method of improving the characteristics of various wavelengths using nano patterning is also proposed. However, this method is disadvantageous in terms of cost due to the addition of an expensive patterning process, Surface recombination occurs.

SUMMARY OF THE INVENTION The present invention has been made in order to overcome the disadvantages of the prior art as described above, and it is an object of the present invention to provide an antireflection film for a solar cell using a nanostructure having a low manufacturing cost and a low surface reflectivity by controlling the density of the nanostructure do.

It is another object of the present invention to provide a method for manufacturing an antireflection film for a solar cell which is low in manufacturing cost.

According to an aspect of the present invention, there is provided an antireflection film for a solar cell using a nanostructure formed on a surface of a solar cell plate, the antireflection film comprising: a thin film layer formed on a surface of the solar cell plate; A first nanostructure layer formed on the top of the thin film layer and including a dense nanostructure; And a second nanostructure layer formed on the first nanostructure layer and including a porous nanostructure.

Preferably, the thickness of the thin film layer is 50 nm to 500 nm.

More preferably, the material of the thin film layer is ITO.

More preferably, the first nanostructure layer and the second nanostructure layer are made of the same material as the thin film layer, the density of the first nanostructure layer is 80 to 90%, and the density of the second nanostructure layer is 10 to 30%.

More preferably, the thickness of the first nanostructure layer is 100 nm to 500 nm, and the thickness of the second nanostructure layer is 10 nm to 10 μm.

More preferably, the second nanostructure layer is formed by applying an oblique angle deposition method in addition to a self catalyst vapor-liquid-liquid (VLS) method.

According to another aspect of the present invention, there is provided a method of manufacturing an antireflection film for a solar cell using a nanostructure, the method comprising: preparing a solar panel for preparing a solar panel for forming an antireflection film on a surface; A thin film layer forming step of forming a thin film layer on the surface of the solar cell plate; A first nanostructure layer forming step of forming a first nanostructure layer on top of the thin film layer; And forming a second nanostructure layer having a density different from that of the first nanostructure layer on the first nanostructure layer.

Preferably, the thickness of the thin film layer is 50 nm to 500 nm.

More preferably, the material of the thin film layer is ITO.

More preferably, the first nanostructure layer and the second nanostructure layer are made of the same material as the thin film layer, the density of the first nanostructure layer is 80 to 90%, and the density of the second nanostructure layer is 10 to 30%.

More preferably, the first nanostructure layer forms a nanostructure by self-catalyst vapor-liquid-liquid (VLS) method.

Preferably, the second nanostructure layer is formed by applying an oblique angle deposition method in addition to the self catalyst vapor-liquid-liquid (VLS) method.

The antireflection film for a solar cell using the nanostructure according to the present invention is formed on the surface of a solar cell and includes a thin film layer, a first nanostructure layer formed on the top of the thin film, and a second nanostructure layer formed on the top of the first nanostructure layer Wherein the first nanostructure layer and the second nanostructure layer have different densities so that the reflectance of light radiated from the outside is extremely lowered and the transmittance of the solar cell is increased to increase the efficiency of the solar cell have.

1 is a sectional view of an antireflection film for a solar cell using the nanostructure according to the present invention,
FIG. 2 is a flowchart illustrating a method of manufacturing an antireflection film for a solar cell using the nanostructure according to the present invention.
FIG. 3 is a schematic diagram of the solar panel preparation step shown in FIG. 2,
4 is a schematic view of the thin film layer forming step shown in FIG. 2,
5 is a schematic view of the first nanostructure layer forming step shown in FIG. 2,
FIG. 6 is a schematic diagram of the second nanostructure layer forming step shown in FIG. 2,
7 is an XRD and HR-TEM graph of the antireflection film formed in the example,
8 is a graph of transmittance and reflectance of the antireflection film formed in Example,
FIG. 9 is a graph of transmittance of an antireflection film formed according to an embodiment,
10 is an IV curve of the solar cell before and after the formation of the nanostructure,
11 is a parameter of the solar cell before and after the formation of the nanostructure,
FIG. 12 is a graph of the solar cell efficiency measurement according to the incident angle of light, a daily output power graph and an annual output power graph according to the southern elevation of Seoul in 2014.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

1, the antireflection film 100 for a solar cell using the nanostructure according to the present invention is formed on the surface of the solar cell plate 1 and includes a thin film layer 10 formed on the top of the solar cell plate 11, A first nanostructure layer 20 formed on the top of the thin film layer 10 and a second nanostructure layer 30 formed on the top of the first nanostructure layer 20.

First, the solar panel 1 is made of a normal material. For example, silicon, III-V compound semiconductors, CIGS, glass, and metal substrates are applied.

The present invention is applied to the solar panel 1 of the above-described material, and may be formed on the solar panel 1 of another material if necessary.

The thin film layer 10 serves as a base layer for forming the first nanostructure layer 20 and the second nanostructure layer 30 and the thin film layer 10, the first nanostructure layer 20, The nanostructure layer 30 is preferably made of the same material.

The material of the thin film layer 10 is preferably ITO.

The thin film layer 10 is formed by a chemical vapor deposition method, a physical vapor deposition method, or a sol-gel method, and is preferably performed at 150 ° C or more and 600 ° C or less, which does not affect the solar cell 1.

At this time, if the thickness of the thin film layer 10 is set to be not less than 50 nm and not more than 500 nm, it is advantageous to the antireflection film, and if it is less than 50 nm or exceeds 500 nm, the antireflection film characteristics are deteriorated.

It is preferable that the process conditions are set by setting the angle of incidence of the flux at 90 degrees in a state where no reactive gas is inserted in a vacuum atmosphere of 6 torr.

Meanwhile, the first nanostructure layer 20 is formed in the form of a dense nanostructure.

At this time, the nanostructure (nanowire) formed in the first nanostructure layer 20 preferably has a diameter of 1 to 100 nm and a length of 100 nm to 10 μm.

The thickness of the first nanostructure layer 20 is preferably 100 nm to 500 nm. At this time, when the thickness is less than 100 nm or more than 500 nm, the antireflective property is insignificant or it is disadvantageous in terms of process.

The first nanostructured layer 20 is made of the same material as the thin film layer 10. That is, ITO.

At this time, the first nanostructure layer 20 is also formed in the same manner as the thin film layer 10, but shows differences in process conditions. That is, it is preferably formed by a chemical vapor deposition method, a physical vapor deposition method, a sol-gel method, and particularly preferably at a temperature of 600 DEG C or lower, which does not affect the solar cell plate 1. In this case, It is preferable that the angle of incidence of the flux is set to 2 degrees or more and less than 40 degrees in a state in which the reactive gas is not inserted.

Particularly, the first nanostructure layer 20 is formed by applying a self-catalyst Vapor-Liquid-Solid (VLS) method which does not require a separate catalyst.

Preferably, the first nanostructure layer 20 has a dense nanostructure formed therein, and the nanostructure has a density of 80 to 90%.

Here, the density (volume ratio) means the percentage of the volume ratio of the nanostructure to the total volume.

The second nanostructure layer 30 is formed of a porous nanostructure and differs in density from the first nanostructure layer 20 in density of the nanostructure.

The second nanostructure layer 30 is made of the same material as that of the thin film layer 10 and is produced through the same process but differs in process conditions. At this time, it is preferable that the process conditions are set by setting the angle of incidence of the flux to 40 degrees or more and 90 degrees or less in a vacuum atmosphere of 6 torr in the state where no reactive gas is inserted.

At this time, the second nanostructure layer 30 forms a nanostructure having a density different from that of the first nanostructure layer 30 by applying an oblique angle deposition method in addition to the self-catalyst vapor-liquid-liquid (VLS) method .

The second nanostructure layer 30 is formed with a porous nanostructure, and the density is preferably set to 10 to 30%. In this ratio, light incident on the second nanostructure layer 30 is not reflected, The rate of transmission to the first nanostructure layer 20 is increased.

In addition, the nanostructure of the second nanostructure layer 30 preferably has a diameter of 10 nm to 1 탆 and a length of 10 nm to 10 탆.

Also, the thickness of the second nanostructure layer 30 is preferably 10 nm to 10 탆, and it also exhibits excellent optical characteristics in the thickness range.

Hereinafter, a method for fabricating an antireflection film for a solar cell using the nanostructure according to the present invention will be described.

As shown in FIG. 2, the method for fabricating an antireflection film for a solar cell using the nanostructure according to the present invention includes a solar cell plate preparation step S1, a thin film layer formation step S2, a first nanostructure layer formation step S3, 2 nanostructure layer forming step (S4).

Each step will be described below.

Solar panel preparing step (S1)

The solar panel preparation step S1 is a step of preparing a solar panel 1 for generating an antireflection film on the surface, as shown in Fig.

The solar panel 1 is manufactured using silicon, III-V compound semiconductor, CIGS, glass, metal substrate or the like, and the solar panel 1 of other materials can also produce an antireflection film.

Thin Film Layer Forming Step (S1)

The thin film layer forming step S1 is a step of forming the thin film layer 10 on the surface of the solar cell plate 1 as shown in Fig.

The material of the thin film layer 10 is ITO.

The thin film layer 10 is formed by a chemical vapor deposition method, a physical vapor deposition method, or a sol-gel method, and is preferably performed at 150 ° C or more and 600 ° C or less, which does not affect the solar cell 1. At this time, it is preferable that the process conditions are set by setting the angle of the flux (flux) to 90 degrees in a state where no reactive gas is inserted in a vacuum atmosphere of 6 torr.

The thickness of the thin film layer 10 is preferably 50 nm to 500 nm.

The first nanostructure layer forming step (S3)

The first nanostructure layer forming step S3 is a step of forming a dense nanostructure on the top of the thin film layer 10 as shown in FIG.

The nanostructure is formed as a typical nanostructure and is formed in an upward direction and exhibits high density characteristics.

The material of the first nanostructure layer 20 is preferably the same as the material of the thin film layer 10.

In addition, the nanostructure of the first nanostructure layer 20 preferably has a diameter of 1 to 100 nm and a length of 100 nm to 10 μm, and exhibits suitable characteristics in the above range.

The thickness of the first nanostructure layer 20 is preferably 100 nm to 500 nm.

The first nanostructure layer 20 may be formed by a chemical vapor deposition method, a physical vapor deposition method, a sol-gel method, or the like. In particular, the first nanostructure layer 20 may be formed at a temperature of 150 ° C or more and 600 ° C or less In this case, it is preferable that the process condition is set by setting the angle of the flux to be in a range of 2 degrees to 40 degrees in a state of no reaction gas (Reactive Gas) inserted in a vacuum atmosphere of 6 torr.

Further, it is preferable to perform the self-catalyst Vapor-Liquid-Solvent (VLS) method in which a separate catalyst is not required.

The second nanostructure layer formation step (S4)

As shown in FIG. 6, the second nanostructure layer forming step S4 may include forming an additional nanostructure layer on top of the first nanostructure layer 20, The first nanostructure layer 20 has different characteristics from the nanostructure formed in the first nanostructure layer 20 and has a porous structure.

Accordingly, the two layers have a density difference due to the nanostructure contained therein, and exhibit an effect of preventing reflection of light due to the density difference.

At this time, the second nanostructure layer 30 is made of the same material as the first nanostructure layer 20, and shows a difference in the shape of the nanostructure.

The second nanostructure layer 30 is made of the same material as the thin film layer 10 and is produced through the same process, but the process conditions are different. At this time, it is preferable that the process conditions are set by setting the angle of the flux to be in a range from 40 degrees to 90 degrees in a vacuum atmosphere of 6 torr without any reactive gas being inserted.

At this time, the second nanostructure layer 30 may be formed by using an oblique angle deposition method in addition to the self-catalyst vapor-liquid-liquid (VLS) method, thereby forming a porous nanostructure 30 having a density different from that of the first nanostructure layer 30. [ .

The thickness of the second nanostructure layer 30 is preferably 10 nm to 10 μm, and the nanowire may be 10 nm to 1 μm in length and 10 nm to 10 μm in length.

The method for fabricating an antireflection film for a solar cell using the nanostructure according to the present invention comprises a thin film layer 10, a first nanostructure layer 20, and a second nanostructure layer 30, It is advantageous in that it can be realized with high speed and low cost.

Example

An antireflection film was formed on the solar cell panel 1 according to the method for fabricating an antireflection film for a solar cell using the nanostructure according to the present invention.

In this case, the material is ITO, the thickness of the thin film layer 10 is 70 nm, the thickness of the first nanostructure layer 20 is 500 nm, the diameter of the nanostructure is 30 to 50 nm, and the length is 500 nm.

The thickness of the second nanostructure layer 30 is 2 μm. The nanostructure has a diameter of 30 to 50 nm and a length of 500 nm. The nanostructure is formed of a porous nanostructure.

The density ratio of the nanostructure to the nanostructure of the second nanostructure layer 30 in the first nanostructure layer 20 was 9: 3, that is, 90%: 30%.

Test example (optical property test)

7 is an XRD and HR-TEM graph of the antireflection film formed in the above embodiment. Referring to FIG. 7, it was confirmed that the nanostructure of the anti-reflection film manufactured according to the present invention is a single crystal.

8 is a graph of transmittance and reflectance of the above embodiment. It can be seen that the reflectance at the height of 2 μm of the nanostructure is about 7% and the transmittance is 96%.

9 is a graph of transmittance for each wavelength according to the embodiment. 9, it was confirmed that the overall diffraction by wavelength according to the height of the nanostructure is lowered.

10 is an I-V curve of the solar cell before and after the formation of the nanostructure, and FIG. 11 is a parameter of the solar cell before and after the formation of the nanostructure.

10 and 11, when the efficiency was measured at a typical angle of incidence of AM 1.5G before and after coating the nanostructure on the solar cell, the efficiency increase rate was 48% at 1 nm of the nanostructure, Respectively.

FIG. 12 is a graph of the solar cell efficiency according to the angle of incidence of light (left and top), a daily output power graph (right and top) and an annual output power graph (left and bottom) according to the southern elevation of Seoul in 2014.

12, it can be seen that the longer the length of the nanostructure, the greater the amount of light absorbed due to the Refractive Index Matching. Further, considering the annual output power, the GRIN 2um shows the highest output power improvement rate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And all of the various forms of embodiments that can be practiced without departing from the technical spirit.

1: Solar panel 10: Thin layer
20: first nanostructure layer 30: second nanostructure layer
100: antireflection film
S1: Solar panel preparing step S2: Thin film forming step
S3: First nanostructure layer formation step S4: Second nanostructure layer formation step

Claims (12)

An antireflection film for a solar cell using a nanostructure formed on a surface of a solar panel,
A thin film layer formed on the surface of the solar cell plate;
A first nanostructure layer formed on the top of the thin film layer and including a dense nanostructure; And
And a second nanostructure layer formed on the first nanostructure layer and including a porous nanostructure,
Wherein the first nanostructure layer and the second nanostructure layer are made of the same material as the thin film layer,
The density of the first nanostructure layer is 80 to 90% and the density of the second nanostructure layer is 10 to 30%
Wherein the density is a percentage of the volume ratio of the nanostructure to the total volume of each layer.
The antireflection film for a solar cell according to claim 1, wherein the thickness of the thin film layer is 50 nm to 500 nm.
The antireflection film for a solar cell according to claim 2, wherein the thin film layer is made of ITO.
delete The antireflection film for a solar cell using the nanostructure according to claim 1, wherein the first nanostructure layer has a thickness of 100 nm to 500 nm and the second nanostructure layer has a thickness of 10 nm to 10 μm.
[6] The antireflection film for a solar cell according to claim 5, wherein the second nanostructure layer is formed by applying an oblique angle deposition method in addition to a self-catalyst vapor-liquid-liquid (VLS) method.
A method of manufacturing an antireflection film for a solar cell using a nanostructure,
A solar panel preparation step of preparing a solar panel for forming an antireflection film on a surface;
A thin film layer forming step of forming a thin film layer on the surface of the solar cell plate;
A first nanostructure layer forming step of forming a first nanostructure layer on top of the thin film layer; And
And forming a second nanostructure layer having a density different from that of the first nanostructure layer on the first nanostructure layer,
Wherein the first nanostructure layer and the second nanostructure layer are made of the same material as the thin film layer,
The density of the first nanostructure layer is 80 to 90% and the density of the second nanostructure layer is 10 to 30%
The density is a percentage of the volume ratio of the nanostructure to the total volume of each layer,
The first nanostructure layer forming step may include forming a nanostructure using a self catalyst vapor-liquid-soli (VLS)
Wherein the second nanostructure layer forming step forms a nanostructure by applying an oblique angle deposition method in addition to a self-catalyst vapor-liquid-solubilization (VLS) method.
[Claim 7] The method according to claim 7, wherein the thickness of the thin film layer is 50 nm to 500 nm.
9. The method of claim 8, wherein the material of the thin film layer is ITO.
delete delete delete
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