KR101669289B1 - Sensor chip, sensor cartridge, and analysis apparatus - Google Patents

Abstract

A sensor chip comprising: a substrate having a planar portion; A plurality of first protrusions periodically arranged at a period of not less than 100 nm and not more than 1000 nm in a first direction parallel to the plane portion and a plurality of second protrusions arranged between two adjacent first protrusions, A plurality of second projections formed on an upper surface of the plurality of first projections, and a plurality of third projections formed on the plurality of base portions, each of the plurality of projections having a surface formed of a metal, And a diffraction grating in which the target material is disposed.

Description

Technical Field [0001] The present invention relates to a sensor chip, a sensor cartridge,

The present invention relates to a sensor chip, a sensor cartridge, and an analyzer.

The present application claims priority to Japanese Patent Application No. 2009-281480, filed on December 11, 2009, and Japanese Patent Application No. 2010-192838, filed on August 30, 2010, Quot;

2. Description of the Related Art In recent years, there has been an increasing demand for sensors used for medical diagnosis and food inspection, and development of sensor technology capable of sensing small size and high speed is required. In order to cope with such a demand, various types of sensors including an electrochemical technique have been studied. Among them, attention has been focused on sensors using surface plasmon resonance (SPR) because they can be integrated, are inexpensive, and do not discriminate the measurement environment.

Here, the surface plasmon is a vibration mode of an electromagnetic wave which causes coupling with light by boundary conditions inherent to the surface. As a method of exciting a surface plasmon, there is a method of engaging a diffraction grating on a metal surface and combining light and plasmon or a method of using an evanescent wave. For example, as a configuration of a sensor using SPR, a configuration is known in which a total reflection type prism and a metal film that contacts a target material formed on the surface of the prism are known. With this configuration, the presence or absence of adsorption of the target substance, such as the presence or absence of adsorption of the antigen in the antigen-antibody reaction, is detected.

On the other hand, a propagating type surface plasmon exists on the metal surface, while a localized surface plasmon exists in the metal fine particle. It is known that when a stationary surface plasmon, that is, a surface plasmon localized on the microstructure of the surface is excited, a remarkably enhanced electric field is induced.

Here, for the purpose of improving the sensor sensitivity, sensors using localized surface plasmon resonance (LSPR) using metal fine particles or metal nanostructures have been proposed. For example, in Patent Document 1 (Japanese Unexamined Patent Publication (Kokai) No. 2000-356587), light is irradiated onto a transparent substrate having metal fine particles fixed on its surface in a film form to measure the absorbance (absorbance) of light transmitted through the metal fine particles And the change in the medium near the metal fine particles is detected to detect the adsorption or deposition of the target material.

However, in Patent Document 1, it is difficult to uniformize the size (size and shape) of the metal fine particles and arrange the metal fine particles regularly. If the size and arrangement of the metal fine particles can not be controlled, the absorption or resonance wavelength caused by the resonance also varies. As a result, the width of the absorbance spectrum is widened, and the peak intensity is lowered. Therefore, the signal change for detecting the change of the medium in the vicinity of the metal fine particles is low, and there is a limit to improving the sensor sensitivity. Therefore, in applications such as specifying a substance from the absorbance spectrum, the sensitivity of the sensor is insufficient.

Japanese Patent Application Laid-Open No. 2000-356587

It is an object of the present invention to provide a sensor chip, a sensor cartridge, and an analyzer capable of enhancing sensor sensitivity in the light of the above circumstances and capable of specifying a target material from the Raman spectroscopic spectrum.

In order to solve the above problems, the present invention employs the following configuration.

According to a first aspect of the present invention, there is provided a sensor chip comprising: a base material having a planar portion; A plurality of first projections periodically arranged at a period of not less than 100 nm and not more than 1000 nm in a first direction parallel to the plane portion and a plurality of second projections arranged between two adjacent first projections to form a base of the substrate A plurality of second protrusions formed on an upper surface of the plurality of first protrusions and a plurality of third protrusions formed on the plurality of framework portions and having a surface formed of a metal, And a diffraction grating formed on the planar surface and on which the target material is disposed.

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, which comprises: a step of exciting augmented near field by surface plasmon resonance with a first projection on a surface of the same shape; and a metal microstructure formed by the second projection and the third projection, And can exhibit high surface enhanced Raman scattering (SERS: Surface Enhanced Raman Scattering). Specifically, when light is incident on a surface having a plurality of first protrusions, a plurality of second protrusions, and a plurality of third protrusions, a surface-specific vibration mode (surface plasmon) by the plurality of first protrusions occurs. Then, the free electrons resonate with the vibration of the light, and the vibration of the electromagnetic wave is excited by the vibration of the free electrons. Since the vibration of the electromagnetic wave affects the vibration of the free electrons, a system in which the vibrations of both are combined, so-called surface plasmon polariton (SPP), is produced. As a result, localized surface plasmon resonance (LSPR) is excited in the vicinity of the plurality of second projections and the plurality of third projections. In this structure, since the distance between two neighboring second projections and the distance between two neighboring third projections are small, an extremely strong enhancement electric field is generated in the vicinity of the contact. Then, when one or several target substances are adsorbed to the contact, SERS is generated there. For this reason, a sharp SERS spectrum unique to the target substance can be obtained. Therefore, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and identifying the target material from the SERS spectrum. The position of the resonance peak can be adjusted to an arbitrary wavelength by suitably changing the period or height of the first projection, the height of the second projection, and the height of the third projection. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, it is preferable that the plurality of first projections are periodically arranged in a second direction intersecting with the first direction and parallel to the plane portion. Thereby, the sensing can be performed under a condition of the plasmon resonance which is wider than in the case where the first projection is periodically formed only in the direction (first direction) parallel to the plane portion of the substrate. Therefore, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and identifying the target material from the SERS spectrum. Further, in addition to the period in the first direction in the first projection, the period in the second direction may be appropriately changed. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, it is preferable that the plurality of second projections and the plurality of third projections are periodically arranged in a third direction parallel to the plane portion. Thereby, the periods of the second projection and the third projection can be appropriately changed. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, it is preferable that the plurality of second projections and the plurality of third projections are periodically arranged in a fourth direction intersecting with the third direction and parallel to the plane portion. Thereby, the sensing can be performed under a broader plasmon resonance condition than in the case where the second projection and the third projection are formed only in the direction (third direction) parallel to the plane portion of the substrate. Therefore, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and identifying the target material from the SERS spectrum. In addition to the period in the third direction in the second projection and the third projection, the period in the fourth direction may be changed appropriately. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, it is preferable that the plurality of second projections and the plurality of third projections are made of fine particles. Thereby, it is possible to provide a sensor chip capable of improving the sensor sensitivity and specifying the target material from the SERS spectrum.

In the sensor chip of the present invention, the metal constituting the surface of the diffraction grating is preferably gold or silver. As a result, since gold or silver has the properties of expressing SPP, LSPR and SERS, SPP, LSPR and SERS are easily expressed, and the target substance can be detected with high sensitivity.

According to a second aspect of the present invention, there is provided a sensor cartridge comprising: the sensor chip described above; A transporting unit for transporting the target material to the surface of the sensor chip; A mounting portion for mounting the sensor chip; A housing for accommodating the sensor chip, the transport section, and the mount section; And an irradiation window provided at a position facing the surface of the sensor chip of the housing.

According to the second aspect of the present invention, since the sensor chip described above is provided, the target molecules can be detected by selectively spectroscopically extracting Raman scattered light. Therefore, it is possible to provide a sensor cartridge capable of improving the sensor sensitivity and capable of specifying a target material from the SERS spectrum.

According to a third aspect of the present invention, there is provided an analyzing apparatus comprising: the sensor chip described above; A light source for emitting light to the sensor chip; And a photodetector for detecting light obtained by the sensor chip.

According to the third aspect of the present invention, since the sensor chip described above is provided, the Raman scattering light can be selectively spectroscopically detected to detect the target molecule. Accordingly, it is possible to provide an analyzer capable of improving the sensitivity of the sensor and specifying the target material from the SERS spectrum.

According to a fourth aspect of the present invention, there is provided a sensor chip comprising: a base material having a planar portion; A first concavo-convex shape in which a plurality of first convex shapes are periodically arranged at intervals of 100 nm or more and 1000 nm or less and a plurality of second convex shapes at a period shorter than the period of the first concavo- Wherein a plurality of third convex shapes are periodically arranged at a period shorter than the period of the first concave-convex shape at a skeleton portion located between the periodically arranged second concave-convex shapes and the two adjacent first convex shapes And a diffraction grating having a composite pattern formed on the planar portion by overlapping the concavo-convex shapes, the diffraction grating having a surface formed of a metal and in which the target material is disposed.

delete

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, which comprises: a step of exciting a near-field electric field enhanced through surface plasmon resonance by a first convex shape to a surface of the same shape, It is possible to express Surface Enhanced Raman Scattering (SERS). Specifically, when light is incident on the surface on which the first concave-convex shape and the second concave-convex shape are formed, a surface-specific vibration mode (surface plasmon) due to the first concave-convex shape is generated. Then, the free electrons resonate with the vibration of the light, and the vibration of the electromagnetic wave is excited by the vibration of the free electrons. Since the vibration of the electromagnetic wave affects the vibration of the free electrons, a system in which the vibrations of both are combined, so-called surface plasmon polariton (SPP), is produced. As a result, localized surface plasmon resonance (LSPR) is excited in the vicinity of the second concave-convex shape. In this structure, since the distance between two neighboring second convex shapes is small, an extremely strong enhancing electric field is generated in the vicinity of the contact. Then, when one or several target substances are adsorbed to the contact, SERS is generated there. For this reason, a sharp SERS spectrum unique to the target substance can be obtained. Therefore, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and identifying the target material from the SERS spectrum. In addition, the position of the resonance peak can be adjusted to an arbitrary wavelength by suitably changing the period, the height, the height of the second convex shape, and the height of the third convex shape of the first convex shape. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, the plurality of first convex shapes are periodically arranged in a first direction parallel to the plane portion, and are arranged in a second direction intersecting the first direction and parallel to the plane portion It is preferable that they are arranged periodically. Thereby, the sensing can be performed under a broader plasmon resonance condition than in the case where the first convex shape is periodically formed only in the direction (first direction) parallel to the plane portion of the substrate. Therefore, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and identifying the target material from the SERS spectrum. In addition to the period in the first direction in the first convex shape, the period in the second direction can be changed as appropriate. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, it is preferable that the plurality of second convex shapes and the plurality of third convex shapes are periodically arranged in a third direction parallel to the plane portion. Thereby, the period of the second convex shape and the third convex shape can be appropriately changed. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, it is preferable that the plurality of second convex shapes and the plurality of third convex shapes are periodically arranged in a fourth direction intersecting with the third direction and parallel to the plane portion. As a result, the sensing can be performed under a condition where the second convex shape and the third convex shape are wider than those in the case where the second convex shape and the third convex shape are formed only in the direction (third direction) parallel to the plane portion of the base material. Therefore, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and identifying the target material from the SERS spectrum. In addition to the period of the third direction in the second convex shape and the third convex shape, the period of the fourth direction may be appropriately changed. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the sensor chip of the present invention, it is preferable that the plurality of second convex shapes and the plurality of third convex shapes are made of fine particles. Thereby, it is possible to provide a sensor chip capable of improving the sensor sensitivity and specifying the target material from the SERS spectrum.

In the sensor chip of the present invention, the metal constituting the surface of the diffraction grating is preferably gold or silver. As a result, since gold or silver has the properties of expressing SPP, LSPR and SERS, SPP, LSPR and SERS are easily expressed, and the target substance can be detected with high sensitivity.

According to a fifth aspect of the present invention, there is provided a sensor cartridge comprising: the sensor chip described above; A transporting unit for transporting the target material to the surface of the sensor chip; A mounting portion for mounting the sensor chip; A housing for accommodating the sensor chip, the transport section, and the mount section; And an irradiation window provided at a position facing the surface of the sensor chip of the housing.

According to the fifth aspect of the present invention, since the sensor chip described above is provided, the target molecules can be detected by selectively spectroscopically analyzing Raman scattered light. Therefore, it is possible to provide a sensor cartridge capable of improving the sensor sensitivity and capable of specifying a target material from the SERS spectrum.

According to a sixth aspect of the present invention, there is provided an analysis apparatus comprising: the sensor chip described above; A light source for emitting light to the sensor chip; And a photodetector for detecting light obtained by the sensor chip.

According to a sixth aspect of the present invention, since the sensor chip described above is provided, Raman scattering light can be selectively spectroscopically detected to detect target molecules. Accordingly, it is possible to provide an analyzer capable of improving the sensitivity of the sensor and specifying the target material from the SERS spectrum.

1A and 1B are schematic diagrams showing a schematic configuration of a sensor chip according to an embodiment of the present invention,
2A and 2B are diagrams showing Raman scattering spectroscopy,
3A and 3B are diagrams showing the mechanism of electric field enhancement by LSPR,
4 is a drawing showing SERS spectroscopy,
5 is a graph showing the intensity of reflected light of the first projecting unit,
6 is a graph showing the dispersion curve of SPP,
7 is a graph showing a reflected light intensity of a sensor chip according to an embodiment of the present invention,
8 is a schematic view of a sensor chip in which a plurality of second projections are formed on a flat surface of a substrate,
Fig. 9 is a graph showing the intensity of light reflected by the sensor chip in Fig. 8,
10A to 10F are diagrams showing a manufacturing process of the sensor chip,
11 is a schematic structural view showing a modified example of the sensor chip having the first projection,
12A and 12B are schematic configuration views showing a modified example of the sensor chip having the second projection,
13A and 13B are schematic configuration views showing a modified example of the sensor chip having the second projection,
14 is a schematic diagram showing an example of an analyzing apparatus,
15 is a schematic diagram showing a schematic configuration of a sensor chip according to an embodiment of the present invention,
16 is a schematic diagram showing a schematic configuration of a sensor chip according to an embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. These embodiments show an aspect of the present invention and are not intended to limit the present invention, and can be arbitrarily changed within the technical scope of the present invention. In the following drawings, the actual structure differs in scale and number in each structure in order to facilitate understanding of each structure.

1A and 1B are schematic diagrams showing a schematic configuration of a sensor chip according to an embodiment of the present invention. 1A is a schematic configuration perspective view of a sensor chip, and FIG. 1B is a schematic structural cross-sectional view of a sensor chip. In Fig. 1B, reference numeral P1 denotes a period of the first projection (first convex shape), P2 denotes a period of the second projection (second convex shape) and a third projection (third convex shape) Reference numeral T1 designates the height of the first projection (depth of the groove), T2 designates the height of the second projection (depth of the groove), T3 designates the height of the third projection Reference numeral W1 denotes the width of the first projection, and reference character W2 denotes the distance between two neighboring first projections.

Figs. 15 and 16 are schematic diagrams showing a schematic configuration of a sensor chip according to an embodiment of the present invention, corresponding to Fig. 1B. 15 and 16, reference numeral P1 denotes a period of the first projection (first convex shape), P2 denotes a second projection (second convex shape), and a third projection (third convex shape) A reference numeral T1 denotes a height of the first projection (depth of the groove), T2 denotes a height of the second projection (depth of the groove), and T3 denotes a height of the third projection The depth of the groove), reference numeral W1 denotes the width of the first projection, and reference symbol W2 denotes the distance between two neighboring first projections.

The sensor chip 1 is formed by arranging a target material on a diffraction grating 9 formed on a base material 10 containing a metal and measuring localized surface plasmon resonance (LSPR) and surface enhanced Raman scattering (SERS: Surface Enhanced Raman Scattering) is used to detect the target material.

The sensor chip 1 is used to locate the target material on the diffraction grating 9 formed on the base material 10 and to detect the target material using LSPR and SERS. The diffraction grating 9 includes a plurality of first projections 11 arranged in a period P1 of not less than 100 nm and not more than 1000 nm in a first direction parallel to the plane portion of the substrate 10, A plurality of framework portions 10a positioned between the first projections 11 and constituting the framework of the substrate 10 and a plurality of second projections 11a formed on each of the upper surfaces 11a of the plurality of first projections 11. [ A second projection 12 and a plurality of third projections 13 formed on each of the plurality of frame parts 10a. The diffraction grating 9 has a surface formed of a metal and is formed on the flat surface portion 10s of the base material 10.

In other words, the diffraction grating 9 has a plurality of first convex shapes (first projections) at a period P1 of 100 nm or more and 1000 nm or less in a direction perpendicular to the plane portion 10s of the base 10, (Second projections) (second projections) 11 are arranged in a period P2 shorter than the period of the first concave-convex shape in each of the plurality of first convex shapes 11 12) are arranged, and a composite pattern obtained by superimposing the first concavo-convex shape on a skeleton portion located between two neighboring first convex shapes (11), and has a surface formed of a metal .

The " diffraction grating " as used herein refers to a structure in which a plurality of concave-convex shapes (a plurality of projections) are periodically arranged.

Here, the term " flat portion " refers to the upper surface portion of the description. That is, the term " planar portion " refers to a surface portion on one side of the base material on which the target material is disposed. The composite pattern formed by superimposing the first irregular shape, the second irregular shape, and the third irregular shape is formed at least on the upper surface portion of the substrate. The shape of the surface portion on one side of the other side of the base material, that is, the bottom surface portion of the base material is not particularly limited. However, in consideration of a processing step to the flat surface (upper surface portion) of the substrate, it is preferable that the lower surface of the base is parallel to the skeleton of the plane portion and is flat.

The structure of the diffraction grating 9 includes a structure in which the substrate 10, the first convex shape 11 and the second convex shape 12 are both made of metal, as shown in Fig. 1B. 15, the substrate 10 and the first convex shape 11 may be formed of an insulating material such as glass or resin so that the entire exposed portion of the insulating member is covered with a metal film, A second convex shape 12 is formed and a third convex shape 13 made of metal is formed. 16, the base 10, the first convex shape 11, the second convex shape 12, and the third convex shape 13 are all formed of insulating members, and the insulating member is exposed And the whole part is covered with a metal film. That is, the diffraction grating 9 is formed such that at least the surface of the skeleton portion 10a, the first convex shape 11, the second convex shape 12 and the third convex shape 13 of the base 10 is formed of a metal .

The substrate 10 has, for example, a structure in which a metal film of 150 nm or more is formed on a glass substrate. This metal film becomes the first protrusion 11, the second protrusion 12, and the third protrusion 13 by a manufacturing process to be described later. In the present embodiment, a substrate having a metal film formed on a glass substrate is used as the substrate 10, but the present invention is not limited thereto. For example, a substrate on which a metal film is formed on a quartz substrate or a sapphire substrate may be used as the substrate 10. A flat plate made of metal may also be used as the substrate.

The first protrusion 11 is formed on the flat surface portion 10s of the substrate 10 with a predetermined height T1. These first projections 11 are arranged in a period P1 shorter than the wavelength of light in a direction parallel to the plane portion 10s of the substrate 10 (first direction). In the period P1, the width of the first protrusion 11 in the first direction (the left-right direction in Fig. 1B) and the distance between the adjacent two first protrusions 11 are mutually combined. The first protrusion 11 is a rectangular convex shape as viewed in cross section, and the plurality of first protrusions 11 are formed in a line and space (stripe shape) as viewed in a plan view.

In the first protrusion 11, for example, it is preferable that the period P1 is set in the range of 100 nm to 1000 nm, and the height T1 is set in the range of 10 nm to 100 nm. Thereby, the first protrusion 11 can function as a structure for expressing the LSPR.

The width W1 of the first projection 11 in the first direction is larger than the distance W2 between the adjacent two first projections 11 (W1 > W2). Thereby, the space filling rate of the first projection 11 on which the LSPR is excited increases.

The second protrusions 12 are formed on the upper surface 11a of each of the plurality of first protrusions 11 at two or more with a predetermined height T2. The third projections 13 are formed in two or more skeletal portions 10a each having a predetermined height T3.

The second projections 12 and the third projections 13 are arranged in a period P2 shorter than the wavelength of light in a direction parallel to the plane portion 10s of the substrate 10 (third direction). In the period P2, the width of the second projection 12 in the third direction (left and right direction in Fig. 1B) and the distance between the adjacent two second projections 12 are made to coincide with each other The width of the third projection 13 in the three directions and the distance between the adjacent two third projections 13 are combined. The period P2 of the second projections 12 (the third projections 13) is sufficiently shorter than the period P1 of the first projections 11. [

It is preferable that the period P2 is set to a value smaller than 500 nm and the heights T2 and T3 are set to a value smaller than 200 nm in the second protrusion 12 and the third protrusion 13 Do. Thus, the second protrusion 12 and the third protrusion 13 can function as a structure for expressing SERS.

In the present embodiment, the arranging direction (first direction) of the first projections 11 and the arranging direction (third direction) of the second projections 12 and the third projections 13 are the same. The second protrusions 12 and the third protrusions 13 are formed in a rectangular convex shape in cross section and the plurality of second protrusions 12 and the plurality of third protrusions 13 are formed in a line And is formed in an end space (stripe shape).

As the metal on the surface of the diffraction grating 9, for example, gold (Au), silver (Ag), copper (Cu), aluminum (A1), or an alloy thereof is used. In the present embodiment, Au or Ag having properties to express SPP, LSPR, and SERS is used. As a result, SPP, LSPR, and SERS are easily expressed, and the target substance can be detected with high sensitivity.

Here, LSPR and SERS are described. When light enters the surface of the sensor chip 1, that is, the surface on which the plurality of first projections 11, the plurality of second projections 12, and the plurality of third projections 13 are formed, 11 (surface plasmons) due to the surface vibrations. However, the polarization direction of the incident light is perpendicular to the groove direction of the first projection 11. [ Then, the vibration of the electromagnetic wave is excited by the vibration of the free electron. Since the vibration of the electromagnetic wave affects the vibration of the free electrons, a system in which the vibrations of both are combined, so-called surface plasmon polariton (SPP), is generated. In this embodiment, the incident angle of the light is substantially perpendicular to the surface of the sensor chip 1, but the incident angle is not limited to such an angle (vertical) as long as the SPP is excited.

Specifically, the SPP propagates along the surface of the sensor chip 1, specifically along the interface between the air and the second projection 12 and the third projection 13, and the second projection 12, the third projection 13 ) Is excited in the vicinity of the local electric field. The binding of SPP is sensitive to the wavelength of light, and its binding efficiency is high. Thus, the localized surface plasmon resonance (LSPR) can be excited from the incident light in the air propagation mode through the SPP. Surface enhanced Raman scattering (SERS) can be used from the relationship between LSPR and Raman scattering light.

2A and 2B are diagrams showing Raman scattering spectroscopy. FIG. 2A shows the principle of Raman scattering spectroscopy. FIG. 2B shows the Raman spectrum (the relationship between Raman shift and Raman scattering intensity). In FIG. 2A, reference numeral L denotes incident light (light of a single wavelength), reference symbol Ram denotes Raman scattering light, reference symbol Ray denotes Rayleigh scattering light, reference symbol X denotes a target molecule Material). In Fig. 2B, the horizontal axis represents Raman shift. The Raman shift is a difference between the frequency of the Raman scattering light (Ram) and the frequency of the incident light (L), and is a value peculiar to the structure of the target molecule (X).

As shown in FIG. 2A, when the target molecule X is irradiated with the light L of a single wavelength, light having a wavelength different from that of the light incident on the scattered light is generated (Raman scattering light Ram). The energy difference between the Raman scattering light (Ram) and the incident light (L) corresponds to the vibration level, the rotation level, or the energy of the electron level of the target molecule (X). Since the target molecule X has a specific vibration energy according to its structure, the target molecule X can be specified by using the light L of a single wavelength.

For example, when the vibration energy of the incident light L is V1, the vibration energy consumed in the target molecule X is V2, and the vibration energy of the Raman scattering light Ram is V3, V3 = V1-V2. Further, most of the incident light L has the same energy as before the collision even after the collision with the target molecule X. [ This elastic scattering light is called Rayleigh scattering (Ray). For example, when the vibration energy of the Rayleigh scattering ray (Ray) is V4, V4 = V1.

It can be seen from the Raman spectrum shown in FIG. 2B that the scattering intensity (spectrum peak) of Raman scattering light Ram and the scattering intensity of Rayleigh scattering light Ray are weak, indicating that Raman scattering light Ram is weak. Thus, the Raman scattering spectroscopy is superior to the discriminating ability of the target molecule (X), but the sensitivity itself for sensing the target molecule (X) is a low measuring method. Here, in the present embodiment, a spectroscopic method (SERS spectroscopy) using surface enhanced Raman scattering is used in order to achieve high sensitivity (see FIG. 4).

Figs. 3A and 3B are diagrams showing the mechanism of electric field enhancement by LSPR. Fig. FIG. 3A is a schematic diagram when light is incident on metal nanoparticles. FIG. 3B is a diagram showing the LSPR enhanced electric field. 3A, numeral 100 denotes a light source, numeral 101 denotes metal nanoparticles, and numeral 102 denotes light emitted from a light source. In Fig. 3B, reference numeral 103 denotes a surface localized electric field.

3A, when the light 102 is incident on the metal nanoparticles 101, the free electrons resonantly vibrate according to the vibrations of the light 102. As shown in FIG. The diameter of the metal nanoparticles is smaller than the wavelength of the incident light. For example, the wavelength of the light is 400 nm to 800 nm, and the diameter of the metal nanoparticle is 10 nm to 100 nm. Further, Ag and Au are used as the metal nanoparticles.

Then, the strong surface-localized electric field 103 is excited in the vicinity of the metal nanoparticles 101 in accordance with the resonance vibration of the free electrons (see FIG. 3B). As described above, the light 102 is incident on the metal nanoparticles 101, thereby exciting the LSPR.

4 is a diagram showing SERS spectroscopy. In FIG. 4, reference numeral 200 denotes a substrate, 201 denotes a metal nanostructure, 202 denotes a selective adsorption film, 203 denotes an enhancement electric field, 204 denotes a target molecule Reference numeral 211 denotes an incident laser beam, reference numeral 212 denotes Raman scattering light, and reference numeral 213 denotes Rayleigh scattering light. Further, the selective adsorption film 202 adsorbs the target molecules 204.

As shown in Fig. 4, when the laser light 211 is incident on the metal nanostructure 201, free electrons resonate with the oscillation of the laser light 211. The size of the metal nanostructure 201 is smaller than the wavelength of the incident laser light. Then, a strong surface-localized electric field is excited in the vicinity of the metal nanostructure 201 in accordance with resonance oscillation of free electrons. Thereby, the LSPR is excited. When the distance between adjacent metal nanostructures 201 becomes small, an extremely strong enhancement electric field 203 is generated in the vicinity of the contact. When one or several target molecules 204 are adsorbed to the contact, SERS is generated there. This point has also been confirmed in the result of the enhancement field generated between two adjacent silver nanoparticles calculated using the finite difference time domain (FDTD) method. Therefore, the Raman scattering light can be selectively spectrally separated, and the target molecule can be detected with high sensitivity.

The present embodiment has a structure for exciting the LSPR by arranging the first projections 11 in a period P1 shorter than the wavelength of light in a direction parallel to the plane portion of the substrate 10 as described above. In the present embodiment, two or more second projections 12 are formed on the upper surface 11a of the first projection 11 and two or more third projections 13 are formed on the framework portion 10a Lt; RTI ID = 0.0 > SERS. ≪ / RTI > Specifically, on the basis of the principle that Raman scattering light is generated when a single wavelength of light is irradiated onto the target molecule, the target molecule is arranged between two neighboring second projections 12 (third projections 13) SERS is generated by causing an enhancement magnetic field in the vicinity of this contact point. This makes it possible to employ the SERS spectroscopy method capable of detecting a target substance with high sensitivity as compared with Raman scattering spectroscopy.

5 is a graph showing a reflected light intensity of the first projecting unit. In Fig. 5, the horizontal axis indicates the wavelength of light, and the vertical axis indicates the reflected light intensity. The height T1 of the first protrusion 11 is taken as a parameter (T1 = 20 nm, 30 nm, 40 nm). In the structure of the sensor chip 1 of the present embodiment, the value obtained by subtracting the reflected light intensity from the incident light intensity (1.0) is the absorbance.

The light is incident perpendicularly to the first protrusion (11). The polarization direction of light is TM (Transverse Electric) polarized light orthogonal to the polarized light having an electric field component parallel to the groove (extending direction of the region between the neighboring first projections 11). The period of the first protrusion 11 is 580 nm, and the resonance peak of the reflected light intensity exists in the vicinity of the wavelength 630 nm. This resonance peak is derived from SPP, and when the height (T1) of the first projection 11 is increased, the resonance peak shifts to the long wavelength side (long wavelength region). When the height T1 of the first projection 11 is 30 nm, the intensity of the reflected light is the strongest, and the absorption is most strongly exhibited.

6 is a graph showing the dispersion curve of SPP. In Fig. 6, reference numeral C1 denotes a dispersion curve of the SPP (for example, a value at the interface between air and Au), and reference numeral C2 denotes a light line. The period of the first protrusion 11 is 580 nm. The position of the lattice vector of the first projection 11 is shown on the horizontal axis (corresponding to 2 pi / P on the horizontal axis in Fig. 6). Extending the line from this position intersects the dispersion curve of the SPP. The wavelength corresponding to this intersection point is obtained from the following equation (1).

[Equation 1]

In Equation 1, P1 is the period of the first protrusion 11, E1 is the complex permittivity of air, and E2 is the complex permittivity of Au. When P1, E1 and E2 are substituted into Equation 1,? = 620 nm is obtained (corresponding to? 0 on the vertical axis in FIG. 6).

The height T1 of the first projection 11 is increased and the fulcrum portion in the wave number of SPP is increased. As a result, the real part in the wavenumbers of the SPP becomes smaller, and the intersection of the line extending from the position of the lattice vector and the dispersion curve of the SPP moves from the upper right side to the lower left side. That is, the resonance peak shifts to the longer wavelength side.

7 is a graph showing the structure of the first protrusion 11 and the second protrusion 12 (the third protrusion 13) superimposed on each other, that is, the intensity of the reflected light of the sensor chip 1 according to the embodiment of the present invention to be. In Fig. 7, the horizontal axis indicates the wavelength of light, and the vertical axis indicates the reflected light intensity. The height T2 of the second projection 12 (the height T3 of the third projection 13) is taken as a parameter (T2 (T3) = 0 nm, 40 nm, 80 nm). The graph of the parameter T2 = 0 in this figure is the same as the graph of the parameter T1 = 30 in Fig.

The light is incident perpendicularly to the first protrusion (11). In addition, the height T1 of the first projection 11 is 30 nm. The period P2 of the second projections 12 (the third projections 13) is 97 nm. The resonance peak of the reflected light intensity exists in the vicinity of the wavelength of 730 nm. Compared with the spectrum of Patent Document 1, the width of the resonance peak is narrow and sharp. This resonance peak is derived from the SPP described above, and the position of the resonance peak shifts to the longer wavelength side by overlapping the second protrusion 12 (third protrusion 13) on the first protrusion 11. At this time, the sharpness and the gradient of the resonance peak are maintained. When the height T2 of the second projection 12 (the height of the third projection 13) is 40 nm, by irradiating light with a wavelength of 730 nm, a strong local electric field . By appropriately changing the periods P1 and P2 and the heights T1 and T2 (T3) of the first protrusion 11 and the second protrusion 12 (the third protrusion 13), the resonance peak The position can be adjusted to an arbitrary wavelength.

8 shows a state in which the first protrusion 11 is not formed on the flat portion 10s of the base 10 but the second protrusion 12 13) is formed on the flat portion 10s of the substrate 10, that is, the sensor chip 2 in the case of forming the plurality of second projections 12 (the third projections 13) Fig.

9 is a graph showing the intensity of light reflected by the sensor chip 2 when a plurality of second projections 12 (third projections 13) are formed on the flat surface portion 10s of the base 10. In Fig. 9, the horizontal axis indicates the wavelength of light, and the vertical axis indicates the reflected light intensity. The height T2 of the second projection 12 (the height T3 of the third projection 13) is taken as the parameter T2 (T3) = 0 nm, 40 nm, 80 nm. The light of the TM polarized light enters the second projections 12 (third projections 13) perpendicularly. The deep resonance peak of the reflected light intensity is not recognized. From this result, it can be seen that light energy can hardly be coupled to the second projections 12 (the third projections 13) when the first projections 11 do not exist, that is, when they do not pass the SPP have.

10A to 10F are diagrams showing a manufacturing process of the sensor chip. First, an Au film 31 is formed on the glass substrate 30 by vapor deposition, sputtering or the like. Next, the resist 32 is coated on the Au film 31 by a method such as spin coating (see Fig. 10A). At this time, the film thickness Ta of the Au film 31 is formed thick (for example, 100 nm) to the extent that incident light is not transmitted.

Next, a resist pattern 32a having a period Pa of 580 nm is formed by an imprint method or the like (see Fig. 10B). Next, using the resist pattern 32a as a mask, the Au film 31 is etched by dry etching to a predetermined depth D1 (for example, 30 nm). Thereafter, the first projections 31a are formed by removing the resist pattern 32a (see Fig. 10C).

Next, the resist 33 is coated on the Au film 31 on which the first convex shape 31a is formed by spin coating or the like (see Fig. 10D). Next, a resist pattern 33a having a period Pb of 97 nm is formed by a method such as imprinting (see FIG. 10E). Next, with the resist pattern 33a as a mask, the Au film 31 on which the first protrusion 31a is formed by dry etching is etched by a predetermined depth D2 (for example, 40 nm). Thereafter, the second projections 31b and the third projections 31c are formed by removing the resist pattern 33a (see FIG. 10F). By the above process, the sensor chip 3 according to the embodiment of the present invention can be manufactured.

According to the sensor chip 1 of the embodiment of the present invention, the LSPR is excited via the SPP by the metal microstructure of the first protrusion 11 and the second protrusion 12, the third protrusion 13, The SERS can be expressed by the microstructure of the metal. Specifically, when light is incident on the surface on which the plurality of first protrusions 11, the plurality of second protrusions 12, and the plurality of third protrusions 13 are formed, the surface of the plurality of first protrusions 11 A unique vibration mode (surface plasmon) occurs. Then, the free electrons resonate with the oscillation of the light, so that the SPP is excited, and strong surface-local electric fields are excited in the vicinity of the second projections 12 and the third projections 13. [ Thereby, the LSPR is excited. In this structure, since the distance between the two adjacent second projections 12 (the third projections 13) is small, an extremely strong enhancement electric field is generated in the vicinity of the contact. Then, when one or several target substances are adsorbed to the contact, SERS is generated there. Therefore, it is possible to obtain a strength characteristic in which the width of the reflected light intensity spectrum is narrow and the resonance peak is sharp, so that the sensor sensitivity can be improved. Therefore, it is possible to provide the sensor chip 1 capable of improving the sensor sensitivity and specifying the target material from the SERS spectrum. By appropriately changing the period P1 and height T1 of the first projection 11, the height T2 of the second projection 12 and the height T3 of the third projection 13, resonance The position of the peak can be adjusted to an arbitrary wavelength. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

According to this configuration, since the second projections 12 and the third projections 13 are periodically arranged in the third direction parallel to the plane portion of the substrate 10, the second projections 12, It is possible to appropriately change the period P2 of the period 13. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

Further, according to this configuration, since gold or silver is used as the metal on the surface of the diffraction grating 9, SPP, LSPR, and SERS are easily expressed, and the target material can be detected with high sensitivity.

Further, according to this configuration, since the duty ratio of the first projection 11 satisfies the relation of W1 > W2 and the space filling rate of the first projection 11 to which the LSPR is excited increases, The sensing can be performed under a broader plasmon resonance condition than in the case of satisfying the condition. Further, the energy of light irradiated when specifying the target material can be effectively utilized.

Although the first protrusions 11 are arranged in the period P1 shorter than the wavelength of the light in the direction (first direction) parallel to the plane portion of the substrate 10 in the present embodiment, It is not limited. The sensor chip 4 having a structure different from that of the first projection 11 of the present embodiment will be described with reference to Fig.

11 is a schematic perspective view of the sensor chip 4 having the first protrusion 11 and the first protrusion 41 of a different form from that of the first protrusion 11 described above. In the drawing, the second projection and the third projection are not shown for the sake of convenience.

11, the first protrusion 41 is formed on the flat surface portion 40s of the base material 40. As shown in Fig. These first projections 41 are arranged in a period P3 shorter than the wavelength of light in a direction parallel to the plane portion of the substrate 40 (first direction). The first projections 41 are arranged in a period P4 which is shorter than the wavelength of light in a second direction perpendicular to the first direction and parallel to the plane portion of the substrate 40. [ The second direction is not limited to the direction orthogonal to the first direction and parallel to the plane portion of the substrate 40, but may be a direction intersecting the first direction and parallel to the plane portion of the base material 40.

According to this structure, the SPP can be excited under a wider resonance condition than in the case where the first projection is formed only in the direction (first direction) parallel to the plane portion of the substrate 10. Therefore, it is possible to provide the sensor chip 4 capable of improving the sensor sensitivity and identifying the target material from the SERS spectrum. In addition to the period P3 in the first direction of the first projection, the period P4 in the second direction may be changed as appropriate. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the present embodiment, the second projections 12 and the third projections 13 are arranged in a period P2 shorter than the wavelength of light in a direction (third direction) parallel to the plane portion of the substrate 10 The structure in which the arrangement direction of the first projections 11 (the first direction) and the arrangement direction of the second projections 12 and the third projections 13 (the third direction) are the same direction But is not limited to this. The sensor chips 5, 6, 7, and 8 having structures different from those of the second protrusion 12 and the third protrusion 13 of the present embodiment will be described with reference to FIGS. 12A to 13B.

12A and 12B are schematic perspective views of the sensor chip having the second projection 12 and the third projection 13 and the second projection and the third projection different from those described above. 12A shows the sensor chip 5 having the second projection 52 and the third projection 53, FIG. 12B shows the sensor chip 6 having the second projection 62 and the third projection 63 have.

As shown in Fig. 12A, at least two second projections 52 are formed on each upper surface 51a of the plurality of first projections 51. As shown in Fig. At least two third projections 53 are formed in each of the plurality of skeleton portions 50a. In this figure, as an example, an angle of intersection between the arrangement direction (first direction) of the first projections 51 and the arrangement direction (third direction) of the second projections 52 and the third projections 53 is Lt; RTI ID = 0.0 > 45 < / RTI >

As shown in Fig. 12B, at least two second projections 62 are formed on each upper surface 61a of the plurality of first projections 61. As shown in Fig. At least two third projections (63) are formed in each of the plurality of skeletal portions (60a). In this figure, as an example, an angle of intersection between the arrangement direction (first direction) of the first projections 61 and the arrangement direction (third direction) of the second projections 62 and the third projections 63 is 90 [deg.].

Also in this configuration, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and specifying the target material from the SERS spectrum.

As shown in Fig. 13A, at least two second projections 72 are formed on each upper surface 71a of a plurality of first projections (not shown). At least two third projections 73 are formed in each of the plurality of skeletal portions 70a. The second projections 72 and the third projections 73 are periodically arranged in a fourth direction that intersects the third direction and is parallel to the plane portion of the substrate. In this drawing, as an example, the second protrusion 72 and the third protrusion 73 have a circular structure in plan view. The second protrusions 72 and the third protrusions 73 may be randomly arranged without having periodicity. Preferably, the distance between the second projections 72 and the distance between the third projections 73 is set in the range of zero to several tens of nm.

As shown in Fig. 13B, at least two second projections 82 are formed on each upper surface 81a of the plurality of first projections (not shown). At least two third projections 83 are formed in each of the plurality of skeleton portions 80a. The second projections 82 and the third projections 83 are periodically arranged in a fourth direction that intersects the third direction and is parallel to the plane portion of the substrate. In this drawing, as an example, the second projection 82 and the third projection 83 show an elliptical structure as viewed in a plan view. The second projections 82 and the third projections 83 may be randomly arranged without having a periodicity. Preferably, the spacing of the second projections 82 and the spacing of the third projections 83 are set in the range of zero to several tens nm.

According to this configuration, the density of the place where the enhancement electric field is generated can be made higher than the case where the second projection and the third projection are formed only in the direction (third direction) parallel to the plane portion of the substrate. Therefore, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and identifying the target material from the SERS spectrum. In addition to the period in the third direction in the second projection and the third projection, the period in the fourth direction may be changed appropriately. Therefore, it is possible to appropriately select the wavelength of the light to be irradiated when specifying the target material, thereby widening the range of the measurement range.

In the present embodiment, the second projection and the third projection are formed by patterning an Au film formed on the upper surface of the glass substrate, but the present invention is not limited to this. For example, the second projection and the third projection may be fine particles. Also in this configuration, it is possible to provide a sensor chip capable of improving the sensitivity of the sensor and specifying the target material from the SERS spectrum.

In the present embodiment, the same metal (gold or silver) is used as the metal included in the base material, the metal included in the first projection, the metal included in the second projection, and the metal contained in the third projection , But it is not limited thereto. For example, the metal contained in the substrate may be gold, the metal contained in the first protrusion may be silver, and the metal contained in the second protrusion (third protrusion) may be an alloy of gold and silver, Copper, aluminum, or an alloy thereof) may be used in combination.

(Analyzer)

Fig. 14 is a schematic diagram showing an example of an analyzing apparatus provided with a sensor chip according to an embodiment of the present invention. The arrows in Fig. 14 show the transport direction of the target material (not shown).

14, the analysis apparatus 1000 includes a sensor chip 1001, a light source 1002, a photodetector 1003, a collimator lens 1004, and a polarization control element 1005 A dichroic mirror 1006, an objective lens 1007, an objective lens 1008, and a carry section 1010. The dichroic mirror 1006 includes a dichroic mirror 1006, The light source 1002 and the photodetector 1003 are electrically connected to a control device (not shown) through wires, respectively.

Light source 1002 generates laser light that excites SPP, LSPR, and SERS. The laser light irradiated from the light source 1002 is collimated by the collimator lens 1004 and passes through the polarization control element 1005 and is reflected by the dichroic mirror 1006 toward the sensor chip 1001 Is condensed by the objective lens 1007, and is incident on the sensor chip 1001. At this time, a target material (not shown) is disposed on the surface of the sensor chip 1001 (for example, the surface on which the metal nanostructure or the detection material selection mechanism is formed). The target material is introduced from the inlet port 1011 into the carry section 1010 by controlling the driving of a fan (not shown) and discharged from the outlet port 1012 to the outside of the carry section 1010. Further, the size of the metal nanostructure is smaller than the wavelength of the laser light.

When the laser light is incident on the metal nanostructure, free electrons resonate with the oscillation of the laser light, and a strong surface local electric field is excited near the metal nanostructure, thereby exciting the LSPR. When the distance between neighboring metal nanostructures becomes small, an extremely strong enhancement electric field is generated near the contact, and when one or several target substances are adsorbed on the contact, SERS is generated there.

The light (Raman scattered light or Rayleigh scattered light) obtained by the sensor chip 1001 passes through the objective lens 1007 and is directed by the dichroic mirror 1006 toward the photodetector 1003, 1007, and enters the photodetector 1003. Then, it is spectrally decomposed by the photodetector 1003, and spectrum information is obtained.

According to this configuration, since the sensor chip according to the embodiment of the present invention is provided, Raman scattering light can be selectively spectroscopically detected to detect the target molecule. Therefore, it is possible to provide an analysis apparatus 1000 capable of improving the sensor sensitivity and specifying the target material from the SERS spectrum.

The analysis apparatus 1000 includes a sensor cartridge 1100. The sensor cartridge 1100 includes a sensor chip 1001, a carry section 1010 for transferring the target material to the surface of the sensor chip 1001, a mount section 1101 for mounting the sensor chip 1001, (Not shown). An irradiation window 1111 is provided at a position facing the sensor chip 1001 of the housing 1110. The laser light irradiated from the light source 1002 passes through the irradiation window 1111 and is irradiated onto the surface of the sensor chip 1001. The sensor cartridge 1100 is located above the analyzing apparatus 1000 and is detachably provided from the main body of the analyzing apparatus 1000.

According to this configuration, since the sensor chip according to the embodiment of the present invention is provided, Raman scattering light can be selectively spectroscopically detected to detect the target molecule. Therefore, it is possible to provide the sensor cartridge 1100 capable of improving the sensor sensitivity and identifying the target material from the SERS spectrum.

The analyzing apparatus of one embodiment according to the present invention can be widely applied to a sensing apparatus used for detection of drugs and explosives, medical and health examinations, and food inspections. It can also be used as an affinity sensor for detecting the presence or absence of adsorption of substances such as the presence or absence of adsorption of an antigen in an antigen-antibody reaction.

1: sensor chip 9: diffraction grating
10: substrate 10a: skeletal part
10s: flat portion 11: first projection (first convex shape)
12: second projection (second convex shape) 13: third projection (third convex shape)

Claims (16)

In the sensor chip,
A substrate having a planar portion;
A plurality of first projections periodically arranged at a period of not less than 100 nm and not more than 1000 nm in a first direction parallel to the planar portion and a plurality of first projections arranged between two adjacent first projections, A plurality of second projections formed on an upper surface of the plurality of first projections, and a plurality of third projections formed on the plurality of framework portions, each of the plurality of projections having a surface formed of a metal, And a diffraction grating in which the target material is disposed
Sensor chip. The method according to claim 1,
The plurality of first projections are periodically arranged in a second direction intersecting with the first direction and parallel to the plane portion
Sensor chip. The method according to claim 1,
The plurality of second projections and the plurality of third projections are periodically arranged in a third direction parallel to the plane portion
Sensor chip. The method of claim 3,
The plurality of second projections and the plurality of third projections are periodically arranged in a fourth direction intersecting with the third direction and parallel to the plane portion
Sensor chip. The method according to claim 1,
Wherein the plurality of second projections and the plurality of third projections are made of fine particles
Sensor chip. The method according to claim 1,
The metal constituting the surface of the diffraction grating may be gold or silver
Sensor chip. In the sensor cartridge,
A sensor chip according to claim 1;
A transporting unit for transporting the target material to the surface of the sensor chip;
A mounting portion for mounting the sensor chip;
A housing for accommodating the sensor chip, the transport section, and the mount section;
And an irradiation window provided at a position facing the surface of the sensor chip of the housing
Sensor cartridge. In the analyzing apparatus,
A sensor chip according to claim 1;
A light source for emitting light to the sensor chip;
And a photodetector for detecting light obtained by the sensor chip
Analysis device. In the sensor chip,
A substrate having a planar portion;
A first concavo-convex shape in which a plurality of first convex shapes are periodically arranged at intervals of 100 nm or more and 1000 nm or less and a plurality of second convex shapes at a period shorter than the period of the first concavo- Wherein a plurality of third convex shapes are periodically arranged at a period shorter than the period of the first concave-convex shape at a skeleton portion located between the periodically arranged second concave-convex shapes and the two adjacent first convex shapes A diffraction grating including a diffraction grating having a composite pattern formed on the planar portion by overlapping the concavo-convex shapes, having a surface formed of a metal,
Sensor chip. 10. The method of claim 9,
Wherein the plurality of first convex shapes are periodically arranged in a first direction parallel to the plane portion and are periodically arranged in a second direction intersecting the first direction and parallel to the plane portion
Sensor chip. 10. The method of claim 9,
The plurality of second convex shapes and the plurality of third convex shapes are periodically arranged in a third direction parallel to the plane portion
Sensor chip. 12. The method of claim 11,
The plurality of second convex shapes and the plurality of third convex shapes are periodically arranged in a fourth direction intersecting with the third direction and parallel to the plane portion
Sensor chip. 10. The method of claim 9,
Wherein the plurality of second convex shapes and the plurality of third convex shapes are formed of fine particles
Sensor chip. 10. The method of claim 9,
The metal constituting the surface of the diffraction grating may be gold or silver
Sensor chip. In the sensor cartridge,
A sensor chip according to claim 9;
A transporting unit for transporting the target material to the surface of the sensor chip;
A mounting portion for mounting the sensor chip;
A housing for accommodating the sensor chip, the transport section, and the mount section;
And an irradiation window provided at a position facing the surface of the sensor chip of the housing
Sensor cartridge. In the analyzing apparatus,
A sensor chip according to claim 9;
A light source for emitting light to the sensor chip;
And a photodetector for detecting light obtained by the sensor chip
Analysis device.

Images