KR101665935B1 - A manufacturing apparatus using ion-beam with electrodes for leveling 2-dimension distribution of ion-beam charge density and a substrate manufacturing method therewith. - Google Patents

Abstract

The present invention relates to an ion beam processing apparatus for performing a substrate processing such as etching, implantation, and ion plating using an ion beam, and a substrate processing method using the ion beam processing apparatus. The ion beam processing apparatus includes an ion A processing chamber in which a substrate is processed by an ion beam, a first primary ion beam control section having a function of forming an ion beam having a predetermined energy after receiving ions from the ion generating section, And a substrate holder configured to form an electric field between the ion beam control unit and the substrate and to control the ion beam entering the process chamber by the first ion beam control unit in a second order, The upper surface is partitioned into a predetermined pattern and the electric field is formed such that the intensity of the electric field is different for each of the divided areas of the upper surface of the substrate holder The deviation of the charge density of the ion beam reaching the substrate can be reduced by the position of the substrate surface.

Description

FIELD OF THE INVENTION [0001] The present invention relates to an ion beam processing apparatus having an electrode structure for uniformizing the spatial distribution of ion beam charge density, and a substrate processing method using the same. therewith.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam processing apparatus for performing a substrate processing such as etching, implantation, and ion plating using an ion beam, and a substrate processing method using the ion beam processing apparatus. More particularly, An electrode structure, and a substrate processing method using the same.

In general, fine processing using ions includes ion milling, ion etching (RIE) processing, focused ion beam (FIB) processing, and ion implanting. Basically, sputtering phenomenon is used in which ions having a high energy are accelerated and collided with the surface of the object to be processed so that the surface atoms of the object are decomposed into the neutrons, secondary electrons, and secondary ions by the impact force and protruded.

Korean Patent Laid-Open Publication No. 2014-0110607 entitled " Reactive ion beam etching apparatus, hereinafter referred to as Prior Art 1 ") discloses an ion source for generating an ion beam, a process chamber in which a process using an ion beam is performed, And a plurality of openings formed through the plurality of openings so as to pass through the plurality of openings to form a plurality of openings in the process chamber, Discloses a reactive ion beam etching apparatus that includes a grid for making the energy and current density of the beam uniform.

KR 2014-0110607 A

In the prior art 1, the energy of the ion beam particle can be controlled only by the grid located between the process chamber and the ion source, and a high voltage must be applied to the grid in order to secure the proper ion beam energy for processing the substrate. (Two-dimensional) scattering of the charge density of the ion beam in accordance with the shape of the process chamber, and the like, There is a second problem that the machining quality is deteriorated due to a difference in the processing amount depending on the position on the surface of the target substrate.

According to an aspect of the present invention, there is provided a plasma processing apparatus including an ion generating section having a function of generating ions for processing a substrate, a process chamber for processing the substrate by the ion beam, A first primary ion beam control unit 30 disposed between the generating unit 10 and the process chamber 20 and having a function of forming an ion beam having a predetermined energy after receiving ions from the ion generating unit 10, A substrate holder for supporting the substrate and forming an electric field with the first ion beam control unit 30 and performing a secondary control of the ion beam entering into the process chamber 20 by the first ion beam control unit The upper surface of the substrate holder 41 is partitioned into a predetermined pattern and the electric field is applied to each of the divided regions of the upper surface of the substrate holder 41 Are formed to be different from each other to reach the substrate Can reduce the deviation of the charge density by the position of the substrate surface of the ion beam.

Further, the partition pattern on the upper surface of the substrate holder 41 can be determined corresponding to the charge density distribution measured in a predetermined reference plane inside the process chamber of the ion beam entering the process chamber by the first ion beam control unit.

Each of the divided regions on the upper surface of the substrate holder 41 functions to form an electric field with the first ion beam control unit 30 by applying a predetermined control voltage to the substrate holder compartment, And a metal electrode portion including metal electrodes 43a, 43b, and 43c having the same shape as the shape of the divided region of the metal electrode portion.

The metal electrodes 43a, 43b and 43c are embedded in a predetermined depth (metal electrode installation depth) from the outermost surface of the substrate holder 41, and the metal electrode installation depth is set to a required size of the electric field Can be determined accordingly.

The substrate having the etched surface of the present invention can be etched using the ion beam processing apparatus described above.

A substrate having an implanted surface can be implanted using the above-described ion beam processing apparatus.

The present invention is characterized in that the velocity and energy of the ion beam particle are primarily controlled in the first ion beam control section 30 and then the ion beam is irradiated by using the electric field formed between the substrate holder section 40 and the first ion beam control section 30, The energy of the particles can be secondarily controlled. Accordingly, it is possible to compensate and control the phenomenon such as the interaction (collision, etc.) of the primary ion beam generated from the first ion beam control unit 30, and to secure the final ion beam energy satisfactorily Effect.

Further, in order to equalize the spatial (two-dimensional) scattering of the ion beam charge density inevitably generated in accordance with the shape of the process chamber and the configuration of the first ion beam control unit, the size of the electric field by the local position on the upper surface of the substrate holder 41 is different And the like. Accordingly, the deviation of the processing amount by the position of the surface of the substrate can be minimized, and the second effect is obtained, which can increase the processing quality.

1 is a schematic diagram showing an embodiment of an ion beam machining apparatus of the present invention.
Fig. 2 is a schematic diagram showing that the substrate holder 41 is partitioned into predetermined logical areas, according to one embodiment of the present invention.
3 is a schematic diagram showing that the substrate holder 41 is partitioned into a predetermined logical area according to an embodiment of the present invention.
FIG. 4 is a perspective view showing metal electrodes 43a, 43b and 43c provided on the upper surface of a substrate holder 41 according to an embodiment of the present invention.
5 is a cross-sectional view showing that metal electrodes 43a, 43b, and 43c are provided on the upper surface of the substrate holder 41 for each of the divided areas, according to an embodiment of the present invention.
6 is a cross-sectional view showing that the metal electrodes 43a, 43b, and 43c for the divided areas provided on the upper surface of the substrate holder 41 are insulated by the insulating layer 44, according to an embodiment of the present invention.
7 is a cross-sectional view showing that the metal electrodes 43a, 43b and 43c of the divided areas provided on the upper surface of the substrate holder 41 are buried at different depths according to an embodiment of the present invention.

The present invention relates to an ion generating part 10 having a function of generating ions for processing a substrate, a process chamber 20 for processing a substrate by an ion beam, an ion generating part 10 and a process chamber 20 , A first primary ion beam control part (30) having a function of extracting ions from the ion generating part (10) and forming an ion beam having a predetermined energy, and a substrate holder (41) for supporting the substrate And a substrate holder 40 to which a control voltage for each substrate holder division is applied.

The ion generating part 10 supplies a reaction gas and applies a high frequency power to generate ions in a plasma state. The ions are generated between the ion generating part 10 and the process chamber 20 Ions are moved to the first ion beam control unit 30 side due to the back pressure difference, and the first primary ion beam control unit 30 extracts the ions and accelerates or decelerates to have a predetermined energy. Since the ions entering the process chamber 20 from the first ion beam control unit 30 have a predetermined directionality and energy, they can be referred to as an ion beam. The ion beam passes through the first ion beam control unit 30 and the substrate holder 41 (E.g., implanting, etching, etc.) in a state in which the substrate is accelerated and controlled by an electric field existing between the substrate and the substrate to have a predetermined energy for substrate processing.

Hereinafter, each component will be described in detail.

The ion generating unit 10 has a function of generating ions for processing a substrate and includes a reaction gas supply unit 11 and a plasma power generating unit 12. The high-frequency power generated from the plasma power generating unit 12 generates a magnetic field, and an electric field is induced in the ion generating unit 10 due to the temporal change of the magnetic field. The electrons accelerated by the induced electric field ionize the reactive gas And causes a plasma state. The plasma power generating unit 12 may apply a high frequency power to the ion generating unit 10 in a capacitive manner by forming electrodes at two mutually isolated portions of the ion generating unit 10, In the embodiment, a method of applying high-frequency power to the high-frequency coil 13 (inductive method) is applied, and the latter has an advantage that a higher plasma ion density can be generated compared with electrons.

The process chamber 20 includes a space in which processing of the substrate is performed by the ion beam, and this space is formed in such a manner that the ion beam for processing the substrate sufficiently secures a mean free path that can proceed without collision with other molecules A vacuum pump 25 may be provided to lower the other molecular densities in the process chamber 20. A pressure difference is generated between the ion generating portion 10 and the process chamber 20. The difference in pressure generally causes the plasma generated in the ion generating portion 10 to flow toward the process chamber 20 As shown in FIG. In addition, the process chamber 20 may include an exhaust unit 29 and an exhaust port 29 functioning to discharge unreacted ions, reaction byproducts, and the like. Since the process chamber 20 should have non-conductive characteristics, it should be made of quartz or pyrex.

The first ion beam control unit 30 is provided between the ion generating unit 10 and the process chamber 20 and has a function of extracting ions from the ion generating unit 10 and forming an ion beam having a predetermined energy . The energy of the ion beam to be provided in the first ion beam control unit 30 is supplied to the ion generating unit 10 (10), since the final energy suitable for processing the substrate is ensured by the electric field inside the process chamber 20 ) Is formed by collimating the ions extracted from the ion beam to form an ion beam. The first ion beam control unit 30 may include at least one electrode plate as an embodiment. In the embodiment shown in FIG. 1, a first ion beam control unit 30 including one electrode plate is shown Through this configuration, it is possible to adjust the collimation characteristics of the ion beam and the like. When two or more electrode plates are provided, it is possible to accelerate and decelerate the ions by forming a separate electric field in the two or more electrode plates (this may be referred to as a first order). Thereafter, ions are extracted through an opening formed in the first ion beam control unit and can be referred to as an ion beam. A DC source or an AC source may be provided to apply a voltage to the first ion beam control unit. The opening portion provided in the first ion beam control portion extracts ions from the ion generating portion 10 and accelerates or decelerates the extracted ions by an electric field so that an ion beam having a predetermined energy is introduced into the process chamber 20 And its shape may be slit, circular, elliptical, or the like, but is not limited thereto. The larger the size of the opening, the greater the size of the ion beam flux. However, if the size of the opening is too large, the first ion beam control unit will not perform the essential function of separating the ion generating unit 10 and the process chamber 20 shall. The number and spacing of the openings should be determined in consideration of the ion beam flux size as well as the pressure difference between the ion generating section 10 and the process chamber 20. When these values are set small, And the ion neutralization collision frequency is lowered to lengthen the mean free path of the ion beam, so that the ion beam having more effective machining energy can reach the substrate. The plasma generated in the ion generating unit 10 has different ion densities depending on its position. In order to secure the same ion density for the entire surface by correcting the plasma density, the size of the opening is adjusted according to the position of the first ion beam control unit Can be considered. Considering that the ion density generated by using the high frequency coil 13 has a larger charge density at the central portion, it is preferable that the size of the opening of the central portion of the first ion beam control portion is set to The size of the opening may be increased as the distance from the center increases.

The substrate holder portion 40 includes a substrate holder 41 for supporting a substrate to be processed. The substrate holder has a first function for fixing and supporting a substrate to be processed, a first function for applying a control voltage for each substrate holder division, and an ion beam entering the process chamber 20 by the first ion beam control unit 30, By the electric field formed between the first substrate holder 30 and the substrate holder 40, to have a predetermined energy suitable for substrate processing.

Regarding the first function, the substrate holder 41 may be provided so as to be parallel to the first primary ion beam control unit 30 described above, but it may be considered that the substrate holder 41 is inclined (tilted) at a predetermined angle with respect to the horizontal plane. This is because the tilting angle is related to the incidence angle of the ion beam to the substrate surface, and the incidence angle of the ion beam has a predetermined function relationship with the processing. Further, the substrate must be positioned at a tilting angle before the substrate is subjected to structural processing such as a trench shape This is because it is possible. It is also conceivable to constitute the substrate holder 40 so as to rotate the substrate holder 41 at a predetermined speed in order to cause the processing to occur symmetrically with the axis of rotation as the axis of symmetry. A separate configuration for realizing such tilting and rotation can be implemented by adopting a known technique.

In relation to the second function, the upper surface of the substrate holder 41 is partitioned into a predetermined pattern, and the electric field formed with respect to each of the partitioned areas of the upper surface of the substrate holder 41 is different in intensity It is possible to reduce the deviation of the charge density of the ion beam reaching the target substrate by the substrate surface position. More specifically, the pattern for partitioning the upper surface of the substrate holder 41 is the same as the pattern for dividing the reference plane R described above, and the former is the projection of the latter onto the plane of the upper surface of the substrate holder 41. [ ).

At this time, the pattern for partitioning the upper surface of the substrate holder 41 is uniquely determined for each ion beam machining apparatus. Spatially distribution of the charge density of the ions generated by the ion generating part - 2-dimensional scattering - depends primarily on the shape (symmetry, etc.) of the ion generating part and the installation position of the high frequency coil. The ion generated with such a specific two-dimensional charge density scatter is primarily controlled by the first ion beam control unit and enters the process chamber to become a so-called ion beam. The spatial distribution of the ion beam charge density and the two- The arrangement of the openings formed in the primary ion beam control unit, the size of each opening, and the like. What is important is the two-dimensional scattering of the ion beam charge density. If the ion beam charge density is not uniform depending on the position of the substrate surface, there will be a difference in processing degree locally between the substrate and the processing quality. In order to prevent this phenomenon, the ion beam charge density measurement reference plane R is set at a predetermined position inside the process chamber for each ion beam machining apparatus, and the two-dimensional dispersion of the charge density of the ion beam is measured and used. The position of the reference plane may be set at any position between the first ion beam control unit and the substrate holder, that is, within the process chamber, but it is preferable to reflect the scattering of the charge density of the ion beam reaching the actual substrate. It is preferable to set it in the vicinity of the substrate holder 41.

Dimensional distribution of the charge density of the ion beam on the ion beam charge density measurement reference plane is visualized in a three-dimensional graph to visualize the overall shape, symmetry, and the like, and then the upper surface of the substrate holder 41 The pattern to be partitioned can be determined.

An ideal configuration for eliminating or reducing the deviation of the ion beam charge density value for each point on the reference plane R is to divide the top surface of the substrate holder 41 into numerous regions and generate electric fields having different sizes for each region The total number of compartments should be determined in view of the need for reducing the cost or complexity of the configuration.

In the embodiment shown in Fig. 2 (a), a plurality of concentric strips each having a predetermined width around a predetermined point on the substrate holder 41, a pattern for partitioning the upper surface of the substrate holder 41 , Which may be the case where the charge density of the ion beam at the reference plane R can be expressed as a function of the radius (a function of one variable) with respect to a given center point. For example, when the value at the position far from the center point is larger than the value at a position near the center point with respect to the magnitude of the charge density of the ion beam at the ion beam charge density measurement reference plane R, The magnitude of the electric field generated at a position near the center point is larger than the magnitude of the electric field generated at a position far from the center point. Of course, the magnitude of the charge density of the ion beam may be larger or smaller at a position far from the center point than near the center point, or may have a maximum value or a minimum value at an intermediate position. This is determined according to the shape and configuration of the ion generating unit and the first ion beam control unit as described above.

In the embodiment shown in FIG. 2 (b), a pattern for partitioning the upper surface of the substrate holder 41 by a plurality of sectors having a center angle of a predetermined size, centering on a predetermined point on the substrate holder 41, This may be the case where the charge density of the ion beam at the reference plane R can be expressed as a function of the orientation (angle) (a function of one variable) with respect to a given center point. In the embodiment shown in FIG. 2 (b), the magnitude of the charge density of the ion beam measured for each of the four partition regions will be unique to each ion beam processing apparatus.

In the embodiment shown in FIG. 3, the substrate holder 41 is partitioned into a plurality of sectors having a central angle of a predetermined size around a predetermined point on the substrate holder 41, , And the charge density at the reference plane R of the ion beam is a function of the orientation (angle) and the radius (with respect to the predetermined center point Variable two functions). In the embodiment shown in FIG. 3, the magnitude of the charge density of the ion beam measured for each of the 12 compartment areas will be unique to each ion beam machining apparatus.

After the upper surface of the substrate holder 41 is logically partitioned so as to spatially equalize the ion beam charge density at the reference plane R as described above, each divided region is divided into a plurality of divided regions of the substrate holder 41 A metal electrode 43a, 43b, 43c having the same shape as the shape and functioning to form an electric field with the first ion beam control unit 30 to which a predetermined control voltage for each of the substrate holder compartments is applied, Electrode unit.

4 and 5, the upper surface of the substrate holder 41 is divided into three concentric strips, and metal electrodes 43a, 43b, and 43c having a predetermined thickness are formed in each of the divided areas. Are installed. The metal electrode portion provided in each of the divided regions has a common DC voltage source for applying control voltages to the metal electrodes 43a, 43b, and 43c and the metal electrodes 43a, 43b, and 43c, A configuration in which a resistor (variable resistor) connected in series is used to vary the control voltage for each substrate holder division is applied, but the configuration is not limited thereto. The substrate to be processed is mounted on the metal electrodes 43a, 43b and 43c exposed on the upper surface of the substrate holder 41. When a voltage is applied to the metal electrodes 43a, 43b and 43c, Is formed by passing through the substrate in contact with the metal electrodes 43a, 43b, 43c.

The substrate holder 41 may further include an insulating layer 44 having a function of insulating the metal electrodes 43a, 43b, and 43c from the outside by including the metal electrodes 43a, 43b, and 43c therein. The insulating layer 44 functions to prevent oxidation of the surfaces of the metal electrodes 43a, 43b, and 43c by preventing exposure of the metal electrodes 43a, 43b, and 43c to air. The dielectric layer 44 may be formed of a dielectric material, and preferably, ceramic (aluminum oxide (Al2O3) or the like) may be used, but the present invention is not limited thereto. 6 shows an insulating layer 44 completely covering the metal electrodes 43a, 43b and 43c provided on the upper surface of the substrate holder 41. The metal electrodes 43a, 43b and 43c The electric field for the secondary control of the ion beam is induced and induced by the polarization of the insulating layer 44. As a result, It should be noted, however, that when a metal substrate is to be processed, contact between the metal electrodes 43a, 43b, and 43c and the metal substrate is required, .

The metal electrodes 43a, 43b and 43c are arranged at predetermined depths (metal electrode installation depth) from the outermost surface of the substrate holder 41, And the depth of the metal electrode installation can be determined according to the required size of the electric field. The depth of the metal electrode is measured from the surface of the metal electrodes 43a, 43b and 43c in the configuration in which the metal electrodes 43a, 43b and 43c are exposed without the insulating layer 44, It should be measured from the outer surface of the insulating layer 44 in the provided configuration. With this configuration, the distance between the metal electrodes 43a, 43b, and 43c and the substrate can be used to more finely adjust the magnitude of the generated electric field.

In the implementation of the metal electrodes 43a, 43b and 43c for coping with the two-dimensional scattering, the charge density of the ion beam is measured and used in addition to the two-dimensional shape of the metal electrodes 43a, 43b and 43c, It is possible to cope with design parameters of a third dimension such as an electrode installation depth. 7, the upper surface of the substrate holder 41 is divided into three concentric strips, and three metal electrodes 43a, 43b, and 43c having a predetermined thickness are formed in each of the divided areas. In FIG. 7 (a), the arrays of the plurality of metal electrodes 43a, 43b, and 43c provided in the substrate holder 41 have a predetermined curvature in which the central portion is a concave portion Under such a configuration, the intensity of the electric field formed at the central portion of the substrate becomes smaller than that formed at the edge of the substrate. In Fig. 7 (b), the arrangement of the entirety of the plurality of metal electrodes 43a, 43b and 43c provided in the substrate holder 41 has a predetermined curvature in which the central portion is a protruding portion.

The substrate holder division control voltage is determined such that an electric field formed between the first ion beam control unit and the substrate holder 41 can accelerate the ion beam entering the process chamber 20 toward the substrate holder 41 . The magnitude of the control voltage for each of the substrate holder compartments is determined by taking into account both the energy of the ion beam at the moment when it is generated from the first ion beam control unit 30 and entering the process chamber 20 and the appropriate energy required for substrate processing, Should be determined so that the electric field formed between the substrate holder 41 and the primary ion beam control 30 can provide.

It is possible to select a simple DC waveform having a constant value as the waveform of the control voltage for each substrate holder section and to apply it as a DC voltage having a square wave waveform. The square wave has a waveform of a quadrangle in which the square wave is high, the maximum value part and the minimum value part each have a constant size, and the maximum value part and the minimum value part of the waveform are repeated at a predetermined time ratio. However, the minimum value portion of the square waveform must be determined in consideration of the fact that the direction of the electric field generated in the process chamber 20 must be set in the direction of the substrate holder 41 in the first ion beam control unit 30. [

The substrate to be processed may be a metal plate, but a dielectric layer such as an oxide layer may be formed on the outermost upper end. In this case, the ion beam impinges on the dielectric layer formed on the substrate, The ion beam particles may be trapped in the dielectric layer while plating occurs, and if such a phenomenon lasts for a long time, the ion beam particles are accumulated continuously and the amount of the substrate charge (positive charge amount) gradually increases . As a result, the accumulated charge acts as a repulsive force (Coulomb force) when the new ion beam particle approaches the substrate surface, which reduces the kinetic energy (proper energy for processing) of the ion beam particle, In addition, the ion beam particles are trapped in the dielectric layer of the substrate. In order to prevent such a side effect, when the control voltage for each substrate holder section as a square wave is applied, the maximum voltage value can be positive and the minimum voltage value can be set negative. In this configuration, the process of peeling the collected ion beam particles proceeds in a section where a positive maximum voltage is applied, and the processing such as etching proceeds in a section where a negative minimum voltage is applied. The magnitude of the maximum voltage value of the positive is not necessarily excessively large and the size thereof is determined in consideration of the fact that it is enough to discharge the ion beam particles collected in the dielectric layer from the dielectric layer or prevent the new ion beam particle from being trapped in the dielectric layer . At this time, in the control voltage waveform of each substrate holder division as the rectangular wave, the duty ratio of the full cycle of the positive maximum voltage section can be considered. Considering that machining is performed in the negative minimum voltage section, In order to secure the maximum, the value can be 50% or less. However, if it is more important to discharge the ion beam particles collected in the dielectric layer from the dielectric layer, the value can be set to 50% or more.

Hereinafter, an embodiment of an ion beam machining method using the ion beam machining apparatus of the present invention will be described.

First, the substrate to be processed is mounted and fixed on the substrate holder 41. At this time, when tilting is required for substrate processing, the substrate holder 40 is adjusted to perform a setting process for tilting. Second, the internal pressure of the process chamber 20 is reduced. This can be performed using a vacuum pump 25 or the like provided in the process chamber 20. Third, a predetermined voltage is applied to the first ion beam control unit 30, and a predetermined control voltage for each substrate holder division is applied to the metal electrodes 43a, 43b, and 43c of the substrate holder 41. [ Fourth, a reactive gas which is a material of the ion beam is injected into the ion generating section 10. This can be performed using the reaction gas supply part 11. [ However, the fourth step may be performed before the third step. Fifth, high-frequency electric power for generating ion plasma is applied to the ion generating part 10. This can be performed through the plasma power generating unit 12. Sixth, the ions generated in the previous stage are passed through the first ion beam control unit 30 to become an ion beam having a predetermined energy, and seventh, the ion beam of the previous stage is applied to the first ion beam control unit 30 and the substrate holder unit 40 And is secondarily controlled to have a predetermined energy suitable for processing the substrate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it should be understood that various changes and modifications will be apparent to those skilled in the art. Obviously, the invention is not limited to the embodiments described above. Accordingly, the scope of protection of the present invention should be construed according to the following claims, and all technical ideas which fall within the scope of equivalence by alteration, substitution, substitution, Range. In addition, it should be clarified that some configurations of the drawings are intended to explain the configuration more clearly and are provided in an exaggerated or reduced size than the actual configuration.

1: substrate to be processed
10:
11: Reaction gas supply part
12: Plasma power generator
13: High frequency coil
20: Process chamber
25: Vacuum pump
29: Outlet
R: ion beam charge density measurement reference plane
30: a first ion beam control unit

40: substrate holder part
41: substrate holder
42: substrate holder partition area
The metal electrode portion
43a, 43b, 43c: metal electrodes
R1, R2, R3: variable resistor section
V: Power source
44: Insulating layer

Claims (14)

An ion generating portion (10) having a function of generating ions for processing the substrate (1);
A processing chamber (20) for processing the substrate by an ion beam;
And a second primary ion beam having a function of forming an ion beam having a predetermined energy after being supplied with ions from the ion generating section 10 and located between the ion generating section 10 and the process chamber 20, A control unit 30;
A substrate supporting the substrate and forming an electric field with the first ion beam control unit 30 and performing a secondary control of the ion beam entering the process chamber 20 by the first ion beam control unit, A substrate holder portion 40 comprising a holder 41;
, ≪ / RTI >
The upper surface of the substrate holder 41 is partitioned into a predetermined pattern,
The electric field is different for each of the divided regions 42 on the upper surface of the substrate holder 41 so that the deviation of the charge density of the ion beam reaching the substrate by the top surface position of the substrate is reduced,
Each of the divided regions on the upper surface of the substrate holder 41 includes a metal electrode having the same shape as the shape of the divided region 42 of the substrate holder 41, And a metal electrode part which is applied with a function of forming an electric field with the first ion beam control part 30,
The metal electrode is embedded in a predetermined depth (metal electrode installation depth) from the outermost surface of the substrate holder 41, and the depth of the metal electrode is determined according to a required size of the electric field. Ion beam processing apparatus.
The method according to claim 1,
The partition pattern on the upper surface of the substrate holder 41 is determined in correspondence with the distribution of the charge density measured in a predetermined reference plane inside the process chamber of the ion beam entering the process chamber by the first ion beam control unit Ion beam processing apparatus.

The method of claim 2,
Characterized in that the partition pattern on the upper surface of the substrate holder (41) is composed of a plurality of cocentric strips having a predetermined width around a predetermined point on the substrate holder (41) Device. The method of claim 2,
Wherein the partition pattern on the upper surface of the substrate holder (41) is composed of a plurality of sectors having a center angle of a predetermined size around a predetermined point on the substrate holder (41). The method of claim 4,
Wherein the partition pattern on the upper surface of the substrate holder (41) is divided into a plurality of strips each having a width of a predetermined size. delete An ion generating portion (10) having a function of generating ions for processing the substrate (1);
A processing chamber (20) for processing the substrate by an ion beam;
And a second primary ion beam having a function of forming an ion beam having a predetermined energy after being supplied with ions from the ion generating section 10 and located between the ion generating section 10 and the process chamber 20, A control unit 30;
A substrate supporting the substrate and forming an electric field with the first ion beam control unit 30 and performing a secondary control of the ion beam entering the process chamber 20 by the first ion beam control unit, A substrate holder portion 40 comprising a holder 41;
An insulating layer (44) provided on the substrate holder (41) and having a function of insulating the metal electrode part from the outside by including a metal electrode part therein;
, ≪ / RTI >
The upper surface of the substrate holder 41 is partitioned into a predetermined pattern,
The electric field is different for each of the divided regions 42 on the upper surface of the substrate holder 41 so that the deviation of the charge density of the ion beam reaching the substrate by the top surface position of the substrate is reduced,
The metal electrode portion has the same shape as the shape of the divided region 42 of the substrate holder 41 with respect to each of the divided regions of the upper surface of the substrate holder 41, And a metal electrode functioning to form an electric field with the first ion beam control unit (30)
Wherein the metal electrode is embedded at a predetermined depth from an outermost surface of the insulating layer and a predetermined depth from an outermost surface of the insulating layer is determined according to a required size of the electric field. .
The method of claim 7,
Wherein the insulating layer (44) is formed of ceramic. delete The method of claim 1 or claim 7,
Wherein the control voltage for each of the substrate holder compartments is applied as a DC voltage having a square wave waveform. A substrate processing method using the ion beam processing apparatus according to claim 1 or claim 7,
(i) fixing the substrate to be processed to the substrate holder (41);
(ii) lowering the internal pressure of the process chamber (s20);
(iii) applying (s30) the substrate holder division control voltage to each of the divided regions of the substrate holder 41;
(iv) injecting a reaction gas into the ion generating unit 10 (s40);
(v) applying (s50) high-frequency power for generating plasma to the ion generating unit 10;
(vi) a step (s60) in which the ions generated in the step (v) pass through the first primary ion beam control unit 30 to become an ion beam having a predetermined energy;
(vii) The ion beam in the step (vi) is accelerated by an electric field formed between the first ion beam control part (30) and the substrate holder part (40) so as to have a predetermined energy suitable for the substrate processing (Step s70);
Wherein the ion beam processing apparatus further comprises: The method of claim 11,
Wherein the step (iii) is performed after the step (iv). A substrate having an etched surface,
A substrate having an etched surface, characterized in that the etching process is performed using the ion beam processing apparatus according to claim 1 or claim 7. In a substrate having an implanted surface,
A substrate having an implanted surface, characterized in that the implanting process is carried out using the ion beam processing apparatus according to claim 1 or claim 7.

Images