KR101663421B1 - Self oscillating mixer with low power - Google Patents

Self oscillating mixer with low power Download PDF

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Publication number
KR101663421B1
KR101663421B1 KR1020150061473A KR20150061473A KR101663421B1 KR 101663421 B1 KR101663421 B1 KR 101663421B1 KR 1020150061473 A KR1020150061473 A KR 1020150061473A KR 20150061473 A KR20150061473 A KR 20150061473A KR 101663421 B1 KR101663421 B1 KR 101663421B1
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South Korea
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transistor
signal
unit
electrode
inductor
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KR1020150061473A
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Korean (ko)
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윤태열
서동현
이지영
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한양대학교 산학협력단
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Superheterodyne Receivers (AREA)

Abstract

Disclosed is a self-oscillation mixer with a low power characteristic. The disclosed mixer includes: a power supply unit; an input unit receiving a radio frequency (RF) signal; a voltage control oscillator connected between the power unit and the input unit, performing a current bleeding, and outputting a local oscillator (LO) signal; a switching unit receiving the RF signal and the LO signal to generate an intermediate frequency (IF) signal; and an output unit outputting the IF signal generated by the switching unit.

Description

[0001] Self oscillating mixer with low power [

Embodiments of the present invention are directed to self-oscillating frequency mixers having low power, high gain and low noise characteristics.

The self oscillating frequency mixer is a combination of a frequency mixer and a voltage controlled oscillator in one block and is widely used in various communication transmission / reception systems.

1 is a view showing an example of a conventional self oscillating frequency mixer.

The self oscillating frequency mixer according to FIG. 1 includes a low noise amplifier, a frequency mixer, and a voltage controlled oscillator.

The low-noise amplifier is a structure using a Simultaneous Noise and Input Matching (SNIM) scheme. The gain stage 110 is composed of M1 and M2, and Ls and Lg perform input matching and noise elimination. The switching stage 120 is composed of M3, M4, M5, and M6, M7 and M8 constitute a current bleeding circuit 130, and Lshunt serves to reduce noise caused by a parasitic capacitor appearing at the switching stage. The voltage controlled oscillator 140 including M9, M10, M11, M12, Cp, Cvar, and Ltank generates a local oscillation signal, and the operating frequency is expressed by Equation 1 below.

Figure 112015042373469-pat00001

Also, the voltage-controlled oscillator 140 is used as a negative terminal of the entire circuit. At this time, C1 serves to apply the generated local oscillation signal to the gate terminal of the switching stage 120, and a low noise amplifier, a frequency mixer, and a voltage controlled oscillator share a current flow.

2 is a diagram showing another example of a conventional self oscillating frequency mixer.

The self oscillating frequency mixer according to FIG. 2 is a circuit including a frequency mixer and a voltage controlled oscillator. M1 to M4 constitute a switching stage 210 and a voltage controlled oscillator 220 composed of M5, M6, L1, L2, Cp, Cvar and Ltank serves to generate a local oscillation signal. The gate terminal of the frequency mixer receives the RF signal and the local oscillation signal generated by the voltage controlled oscillator 220 is applied to the source electrode of the switching stage 210.

However, the self-oscillation frequency mixer of the prior art has a drawback that it is difficult to perform low power, high gain, and low noise performance.

In particular, the self-generating frequency mixer according to FIG. 1 requires a supply voltage as high as the amount of voltage drop required for each block because the low noise amplifier, frequency mixer, and voltage controlled oscillator are stacked, It has a disadvantage in that a large power consumption is required despite sharing the current flow.

The self-generated frequency mixer according to FIG. 2 has a structure in which a frequency mixer and a voltage-controlled oscillator are stacked. However, the self-generated frequency mixer has a disadvantage in that it can not remove noise generated by the absence of a low- .
On the other hand, Korean Patent No. 1390037 (name of the invention: frequency mixer) is a prior art related to this technology.

In order to solve the problems of the prior art as described above, the present invention proposes a self oscillating frequency mixer having characteristics of low power, high gain and low noise.

Other objects of the invention will be apparent to those skilled in the art from the following examples.

In order to achieve the above object, according to a preferred embodiment of the present invention, An input unit for receiving an RF (Radio Frequency) signal; A voltage controlled oscillator connected between the power supply unit and the input unit and performing current bleeding and outputting a local oscillator (LO) signal; A switching unit for receiving the RF signal and the LO signal and generating an intermediate frequency (IF) signal; And an output unit for outputting the IF signal generated by the switching unit.

The input unit may be a low power amplifier including a first transistor.

Wherein the switching unit has a second transistor and a third transistor, the output unit includes a first resistor connected to the second transistor and a second resistor connected to the third transistor, The LO signal may be applied to the control electrode of the third transistor.

The voltage-controlled oscillator may be a cross-coupled structure.

Wherein the voltage control oscillator comprises a fourth transistor, a fifth transistor, a first capacitor, a second capacitor, a first inductor and a second inductor, wherein a control electrode of the fourth transistor is connected to the first conduction electrode A control electrode of the fifth transistor is connected to a first conduction electrode of the fourth transistor, a first conduction electrode of the fourth transistor, one terminal of the first capacitor, and one terminal of the first inductor And a second node connected to the other end of the first capacitor and a second node of the second capacitor, wherein the first node of the first capacitor and the second node of the second capacitor are connected to each other, The other end of the first inductor and the other end of the second inductor are connected to each other and the power supply unit is connected between the other end of the first inductor and the other end of the second inductor, The second conduction electrode of the fourth transistor and the second conduction electrode of the fifth transistor are connected to the input unit to receive the RF signal and may be output as the LO signal at the third node and the fourth node .

Wherein the frequency mixer has one end connected between the second conducting electrode of the fourth transistor and the second conducting electrode of the fifth transistor, and the RF signal output from the input section is connected to the second conducting electrode of the fourth transistor And an RF signal blocking unit for blocking entry into the second conduction electrode of the fifth transistor.

According to another embodiment of the present invention, An input unit for receiving an RF (Radio Frequency) signal; A voltage controlled oscillator connected between the power supply unit and the input unit and outputting a local oscillator; An RF signal cutoff unit connected between the voltage controlled oscillator and the input unit and for blocking the RF signal from entering the voltage controlled oscillator; A switching unit for receiving the RF signal and the LO signal and generating an intermediate frequency (IF) signal; And an output unit for outputting the IF signal generated by the switching unit.

The self oscillating frequency mixer according to the present invention has advantages of low power, high gain and low noise characteristics.

1 is a view showing an example of a conventional self oscillating frequency mixer.
2 is a diagram showing another example of a conventional self oscillating frequency mixer.
3 is a schematic diagram of a self-generating frequency mixer according to an embodiment of the present invention.
4 to 8 are diagrams showing simulation results of a frequency mixer according to an embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

The terms "first "," second ", and the like can be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. The term "and / or" includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic diagram of a self-generating frequency mixer according to an embodiment of the present invention.

3, the self-power-frequency mixer 300 according to an embodiment of the present invention uses a current reuse technique and includes a power source unit 310, an input unit 320, a switching unit 330, an output unit 340 A voltage-controlled oscillator 350, and an RF signal interceptor 360.

The power supply unit 310 supplies power for operating the components in the self power generation frequency mixer 300.

The input unit 320 receives an RF RF signal having a specific frequency through an antenna and includes a first transistor M1, for example, an N-MOS transistor. do. According to an embodiment of the present invention, the input unit 320 may be a low power amplifier.

The switching unit 330 is connected to the input unit 320 and receives an RF signal and a local oscillator (LO) signal to generate an IF (Intermediate Frequency) signal. Here, the IF signal has the same information as the RF signal but has the same information, and has a frequency corresponding to the frequency difference between the RF signal and the LO signal.

The switching unit 330 may include a second transistor M2 and a third transistor M3 connected in parallel to the power supply unit 310. [ The LO signal is generated and output from the voltage-controlled oscillator 340 described below, includes the LO + signal and the LO- signal, LO + is applied to the control electrode of the second transistor M2, that is, the gate electrode, LO- is applied to the gate electrode of the third transistor M3.

According to an embodiment of the present invention, at least one of the second transistor M2 and the third transistor M3 may be a p-MOS transistor, and preferably all p-MOS transistors. If the transistors M2 and M3 of the switching unit 330 are implemented as p-MOS transistors, the noise of the frequency mixer can be reduced. Specifically, when the transistors M2 and M3 are implemented as p-MOS transistors, the LO + and LO- signals are completely switched and input to the gate electrodes of the transistors M2 and M3, f noise is low.

Considering the input unit 320 and the switching unit 330 as a whole, the input unit 320 may be used as an NMOS transistor M1 having high transconductance characteristics to improve the gain, -Mod transistors M2 and M3 to reduce noise. As a result, the frequency mixer 300 of the present invention has an advantage that low noise can be realized while improving the gain.

The output unit 340 includes a first resistor R L1 and a second resistor R L2 connected to the transistors M2 and M3 of the switching unit 330, IF + signal and IF- signal through the IF + stage and IF-stage. That is, the output unit 340 includes a first resistor R L1 connected to the second transistor M2 and a second resistor R L2 coupled to the third transistor M3.

Here, the IF + signal and the IF- signal may have a first frequency corresponding to the RF signal and a third frequency between the second frequency corresponding to the LO signal. For example, the frequency mixer 300 converts an RF signal of a first frequency and outputs an IF signal of a third frequency lower than the first frequency. However, the IF signal may include the same information as the RF signal.

The voltage controlled oscillator 350 is connected between the power supply unit 310 and the input unit 320. That is, the voltage controlled oscillator 350 is connected between the node n1 and the second transistor M2 and the third transistor M3, Connected between the node n2 where the source electrode meets, performs current bleeding, and outputs an LO signal. That is, the voltage-controlled oscillator 350 outputs the LO signal, which is a unique function, together with current bleeding.

More specifically, in the case of current bleeding, the current output from the power supply unit 310 is branched from the node n2 to the second transistor M2, the voltage-controlled oscillator 350, and the third transistor M3.

When the voltage controlled oscillator 350 that performs current bleeding is present and when the voltage controlled oscillator 350 is present, the current flowing to the second transistor M2 and the third transistor M3 The amount becomes smaller than the amount of current when the voltage-controlled oscillator 350 is not present. Therefore, when the voltage controlled oscillator 350 is present, the first resistor R L1 and the second resistor R L2 of the output unit 340 are connected to the first resistor Rl2 when the voltage controlled oscillator 350 is not present R L1 and the second resistor R L2 .

Here, since the gain of the frequency mixer 300 is proportional to the values of the load resistance R L , that is, the values of the first resistor R L1 and the second resistor R L2 , The gain of the frequency mixer 300 may be higher than the gain of the frequency mixer 300 when the voltage controlled oscillator 350 is not present. That is, the frequency mixer 300 uses the voltage-controlled oscillator 350 to improve the overall conversion gain.

In the present invention, the voltage-controlled oscillator 350 is provided inside the frequency mixer 300, and the power mixer 300 is provided with a power source supplied from the power source unit 310 The voltage controlled oscillator 350 is operated. Therefore, there is no need for an extra power supply necessary for operating the voltage-controlled oscillator 350, and the frequency mixer 300 having the two-stage configuration can be constructed.

According to one embodiment of the present invention, the voltage controlled oscillator 350 may be a cross-coupled structure.

More specifically, the voltage-controlled oscillator 350 includes a fourth transistor (M4), a fifth transistor (M5), the variable capacitor of the first capacitor (Cvar 1) and a second capacitor (Cvar. 2), the first inductor (Lvco 1 And a second inductor Lvco 2 .

At this time, the gate electrode of the fourth transistor M4 is connected to the first conduction electrode or the drain electrode of the fifth transistor M5, and the gate electrode of the fifth transistor M5 is connected to the drain of the fourth transistor M4 The drain electrode of the fourth transistor M4, one end of the first capacitor Cvar 1 and one end of the first inductor Lvco 1 are connected to each other at the third node, and the drain of the fifth transistor M5, One end of the second capacitor Cvar 2 and one end of the second inductor Lvco 2 are connected to each other at the fourth node and the other end of the first capacitor Cvar 1 and the other end of the second capacitor Cvar 2 are connected And the other end of the first inductor Lvco 1 and the other end of the second inductor Lvco 1 may be connected. The power supply unit 310 is connected between the other end of the first inductor Lvco 1 and the other end of the second inductor Lvco 2 and the second conduction electrode of the fourth transistor M 4, The source electrode of the second transistor M5 may be connected to the input unit 320 to receive the RF signal and output the LO signal at the third node and the fourth node.

The RF signal interrupter 360 has one end connected between the source electrode of the fourth transistor M4 and the source electrode of the fifth transistor M5 and the RF signal output from the input unit 320 is coupled to the fourth transistor M4. The source electrode of the fifth transistor M5 and the source electrode of the fifth transistor M5. That is, the RF signal blocking unit 360 blocks the RF signal input through the input unit 320 from being transmitted to the node n1. Of course, the circuit of the RF signal intercepting unit 360 can be variously modified as long as it blocks the RF signal.

In summary, the frequency mixer 300 according to an embodiment of the present invention is a self oscillating frequency mixer having a SNIM (Simultaneous Noise and Input Matching) structure in which a voltage drop is generated by a low noise amplifier, a frequency mixer, Lt; / RTI > Therefore, it has an advantage that a lower supply voltage can be used than the prior art shown in Fig. In addition, since it includes a low-noise amplifier, it can have relatively higher gain and lower noise than the prior art of FIG. In addition, the circuit structure of the frequency mixer 300 of the present invention is characterized by an ultra-low power by using a low-noise amplifier, a frequency mixer, and a voltage-controlled oscillator sharing a current flow and using a low supply voltage.

4 to 8 are diagrams showing simulation results of the frequency mixer 300 according to an embodiment of the present invention.

4 is a graph showing the conversion gain and the noise figure of the frequency mixer 300 of the present invention. The conversion gain at 100 MHz, which is the output frequency of the frequency mixer 300, is about 15 to 17 dB. The noise figure at 2.4 GHz, which is the frequency used in this embodiment, is about 12 dB.

5 is a graph showing the input voltage tertiary crossing point IIP3 of the frequency mixer 300 of the present invention. IIP3 is about -18.1 dBm.

FIG. 6 is a graph illustrating a 2.4 GHz input matching frequency used in the frequency mixer 300 of the present invention.

FIG. 7 is a graph showing frequency tuning characteristics of the voltage-controlled oscillator 350 of the frequency mixer 300 of the present invention. The frequency tuning characteristics are 2.09 GHz to 2.57 GHz, which is 20.63%.

8 is a graph showing the phase noise figure of the voltage-controlled oscillator 350 of the frequency mixer 300 of the present invention, which is -108 dBc / Hz.

As described above, the present invention has been described with reference to particular embodiments, such as specific elements, and limited embodiments and drawings. However, it should be understood that the present invention is not limited to the above- Various modifications and variations may be made thereto by those skilled in the art to which the present invention pertains. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

Claims (8)

A power supply unit;
An input unit for receiving an RF signal;
A first capacitor and a second capacitor connected in series between the power supply unit and the input unit and performing current bleeding and simultaneously outputting an LO signal, wherein the first and second capacitors, the first inductor and the second inductor, Voltage controlled oscillator;
A switching unit receiving the RF signal and the LO signal and generating an IF signal, the second switching unit including a second transistor and a third transistor; And
And an output unit for outputting the IF signal generated by the switching unit,
The control electrode of the fourth transistor is connected to the first conducting electrode of the fifth transistor, the control electrode of the fifth transistor is connected to the first conducting electrode of the fourth transistor, Electrode, one end of the first capacitor and one end of the first inductor are connected at a third node, one end of the second capacitor and one end of the second inductor are connected to a fourth node, The power source unit is connected between the other end of the first inductor and the other end of the second inductor, and the second conducting electrode of the fourth transistor and the second conducting electrode of the fifth transistor are connected to the input unit Receiving the RF signal, outputting the LO signal at the third node and the fourth node, the control electrode of the second transistor being connected to the third node, The control electrode of the third transistor is a frequency mixer, characterized in that connected to the fourth node. The method according to claim 1,
Wherein the input unit is a low power amplifier including a first transistor. The method according to claim 1,
Wherein the output comprises a first resistor coupled to the second transistor and a second resistor coupled to the third transistor. The method according to claim 1,
Wherein the voltage controlled oscillator is a cross-coupled structure. delete The method according to claim 1,
The frequency mixer includes:
One end of the fourth transistor is connected to the second conduction electrode of the fourth transistor and the second conduction electrode of the fifth transistor, and the RF signal output from the input unit is connected to the second conduction electrode of the fourth transistor, Further comprising: an RF signal cutoff unit for blocking an input to the second conduction electrode. A power supply unit;
An input unit for receiving an RF signal;
A voltage controlled oscillator connected between the power supply unit and the input unit and outputting an LO, the voltage controlled oscillator including a fourth transistor, a fifth transistor, a first capacitor and a second capacitor connected in series, a first inductor and a second inductor;
An RF signal cutoff unit connected between the voltage controlled oscillator and the input unit and for blocking the RF signal from entering the voltage controlled oscillator;
A switching unit receiving the RF signal and the LO signal and generating an IF signal, the second switching unit including a second transistor and a third transistor;
And an output unit for outputting the IF signal generated by the switching unit,
The control electrode of the fourth transistor is connected to the first conducting electrode of the fifth transistor, the control electrode of the fifth transistor is connected to the first conducting electrode of the fourth transistor, Electrode, one end of the first capacitor and one end of the first inductor are connected at a third node, one end of the second capacitor and one end of the second inductor are connected to a fourth node, The power source unit is connected between the other end of the first inductor and the other end of the second inductor, and the second conducting electrode of the fourth transistor and the second conducting electrode of the fifth transistor are connected to the input unit Receiving the RF signal, outputting the LO signal at the third node and the fourth node, the control electrode of the second transistor being connected to the third node, The control electrode of the third transistor is a frequency mixer, characterized in that connected to the fourth node. 8. The method of claim 7,
Wherein the voltage-controlled oscillator is a cross-coupled structure and performs current bleeding.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180129096A (en) * 2017-05-25 2018-12-05 한양대학교 산학협력단 Current reuse voltage controlled oscillator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100770432B1 (en) * 2006-08-22 2007-10-26 삼성전기주식회사 Frequency conversion circuit using current mirroring
US20100301955A1 (en) * 2009-05-29 2010-12-02 The Hong Kong University Of Science And Technology Frequency divider using an injection-locking-range enhancement technique
KR20130032501A (en) * 2011-09-23 2013-04-02 한양대학교 산학협력단 Frequency mixer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100770432B1 (en) * 2006-08-22 2007-10-26 삼성전기주식회사 Frequency conversion circuit using current mirroring
US20100301955A1 (en) * 2009-05-29 2010-12-02 The Hong Kong University Of Science And Technology Frequency divider using an injection-locking-range enhancement technique
KR20130032501A (en) * 2011-09-23 2013-04-02 한양대학교 산학협력단 Frequency mixer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180129096A (en) * 2017-05-25 2018-12-05 한양대학교 산학협력단 Current reuse voltage controlled oscillator
KR101951553B1 (en) * 2017-05-25 2019-02-22 한양대학교 산학협력단 Current reuse voltage controlled oscillator

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