KR101662194B1 - Apparatus for plasma enhanced atomic layer deposition and method for forming thin film oxides using the same - Google Patents

Apparatus for plasma enhanced atomic layer deposition and method for forming thin film oxides using the same Download PDF

Info

Publication number
KR101662194B1
KR101662194B1 KR1020150042459A KR20150042459A KR101662194B1 KR 101662194 B1 KR101662194 B1 KR 101662194B1 KR 1020150042459 A KR1020150042459 A KR 1020150042459A KR 20150042459 A KR20150042459 A KR 20150042459A KR 101662194 B1 KR101662194 B1 KR 101662194B1
Authority
KR
South Korea
Prior art keywords
plasma
chamber
thin film
substrate
oxide thin
Prior art date
Application number
KR1020150042459A
Other languages
Korean (ko)
Other versions
KR20160116171A (en
Inventor
김형준
오일권
이한보람
Original Assignee
연세대학교 산학협력단
인천대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 연세대학교 산학협력단, 인천대학교 산학협력단 filed Critical 연세대학교 산학협력단
Priority to KR1020150042459A priority Critical patent/KR101662194B1/en
Publication of KR20160116171A publication Critical patent/KR20160116171A/en
Application granted granted Critical
Publication of KR101662194B1 publication Critical patent/KR101662194B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The present invention relates to a plasma atomic layer deposition apparatus and a method of forming an oxide thin film using plasma atomic layer deposition, the apparatus comprising: a chamber for providing a space in which a process is performed; A plasma generator installed in the chamber to generate plasma in the chamber; And a target flat band voltage level of an oxide thin film to be deposited on the substrate or a target threshold voltage level of a transistor including an oxide thin film, and calculates a power of the plasma based on the calculated power of the plasma And a control unit for controlling the plasma generation unit according to the control signal.

Figure R1020150042459

Description

FIELD OF THE INVENTION [0001] The present invention relates to a plasma atomic layer deposition apparatus and a method of forming an oxide thin film using plasma atomic layer deposition. BACKGROUND OF THE INVENTION < RTI ID = 0.0 &

The present invention relates to a plasma atomic layer deposition apparatus and a method for forming an oxide thin film using plasma atomic layer deposition.

Atomic Layer Deposition (ALD) processes are being studied to deposit thin films on an atomic layer basis. The atomic layer deposition process has better step coverage than the conventional chemical vapor deposition (CVD) process and can deposit a thin film having a uniform thickness over a wide area, Has been gaining great popularity in the manufacture of semiconductor devices.

The atomic layer deposition process is divided into thermal ALD and plasma enhanced ALD (PE-ALD) depending on the reactants used in the process. The thermal atomic layer deposition provides a gaseous state of the reactant reacting with the metal precursor material, while the plasma enhanced atomic layer deposition provides the reactant in a plasma state. Plasma-enhanced atomic layer deposition (PE-ALD) using a highly reactive reactive material has a higher growth rate than a thermal atomic layer deposition method, and a dense film density can be obtained And has the advantage of lowering the process temperature.

On the other hand, a semiconductor such as a metal oxide transistor has a characteristic in which a threshold voltage changes according to a flat band voltage of a metal oxide. The threshold voltage of a transistor has a great influence on the performance of a semiconductor, and its importance is increasing as the degree of integration of the semiconductor device increases. Accordingly, it is necessary to adjust the flat band voltage of the metal oxide or the threshold voltage of the transistor to a desired value, and it is necessary to study process conditions affecting the flat band voltage of the metal oxide and the threshold voltage of the transistor.

The present invention relates to a plasma atomic layer deposition apparatus capable of controlling a flat band voltage of a metal oxide semiconductor and capable of manufacturing a transistor having a desired threshold voltage and a method of forming an oxide thin film using plasma atomic layer deposition And to provide the above objects.

The problems to be solved by the present invention are not limited to the above-mentioned problems. Other technical subjects not mentioned will be apparent to those skilled in the art from the description below.

A plasma atomic layer deposition apparatus according to an aspect of the present invention includes a chamber for providing a space in which a process is performed; A plasma generator installed in the chamber to generate plasma in the chamber; And a controller for calculating the power of the plasma according to a target flat-band voltage level of the thin oxide film to be deposited on the substrate, and controlling the plasma generator according to the calculated power of the plasma.

In one embodiment of the present invention, the controller calculates a relatively low value of the power of the plasma when the target flat band voltage level is relatively low, and when the target flat band voltage level is relatively high, The power can be calculated to a relatively high value.

According to an embodiment of the present invention, the plasma atomic layer deposition apparatus includes a substrate supporting unit provided in the chamber and supporting the substrate; A supply part for supplying a precursor material, a purge gas and a reaction material into the chamber; And an exhaust unit for exhausting the material in the chamber, wherein the plasma generating unit excites the oxygen of the reactive material into a plasma state to generate plasma oxygen in the chamber.

According to another aspect of the present invention, there is provided a plasma atomic layer deposition apparatus for depositing an oxide thin film to manufacture a transistor, comprising: a chamber for providing a space in which a process is performed; A plasma generator installed in the chamber to generate plasma in the chamber; And a control unit for calculating a power of the plasma according to a target threshold voltage level of the transistor and controlling the plasma generation unit according to the calculated power of the plasma.

In one embodiment of the present invention, the controller calculates the power of the plasma to a relatively low value when the target threshold voltage level is relatively low, and calculates a power of the plasma when the target threshold voltage level is relatively high A relatively high value can be calculated.

According to another aspect of the present invention, there is provided a method of forming an oxide thin film using a plasma atomic layer deposition, which comprises sequentially supplying a precursor material and a reactive material onto a substrate and forming a plasma to deposit an oxide thin film on the substrate, Forming an oxide thin film on the substrate by setting electric power to a value corresponding to a target flat-band voltage level of an oxide thin film to be deposited on the substrate; and forming a thin oxide film using the plasma atomic layer deposition / RTI >

In one embodiment of the present invention, the step of forming the oxide thin film sets the power of the plasma to a relatively low value when the target flat band voltage level is relatively low, The power of the plasma can be set to a relatively high value.

In one embodiment of the present invention, the step of forming the oxide thin film includes: supplying a precursor gas to a chamber in which the substrate is disposed; Supplying a purge gas to the chamber; Forming a reaction material excited in a plasma state in the chamber; And supplying a purge gas to the chamber.

In one embodiment of the present invention, the reactant excited into the plasma state may include plasma oxygen.

According to another aspect of the present invention, there is provided a method of manufacturing a transistor including sequentially supplying a precursor material and a reactive material onto a substrate, and forming a plasma to deposit an oxide thin film on the substrate, And forming a thin oxide film on the substrate by setting the threshold voltage of the transistor to a value corresponding to a target threshold voltage level of the transistor.

In one embodiment of the present invention, the step of forming the oxide thin film sets the power of the plasma to a relatively low value when the target threshold voltage level is relatively low, and when the target threshold voltage level is relatively high The power of the plasma can be set to a relatively high value.

According to an embodiment of the present invention, the plasma power can be controlled to control the flat band voltage of the metal oxide semiconductor, and a transistor having a desired threshold voltage can be manufactured.

The effects of the present invention are not limited to the effects described above. Unless stated, the effects will be apparent to those skilled in the art from the description and the accompanying drawings.

1 is a schematic diagram of a plasma atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a view illustrating a process of performing plasma atomic layer deposition according to an embodiment of the present invention. Referring to FIG.
3 is an exemplary flow diagram of a method for forming an oxide thin film using plasma atomic layer deposition according to an embodiment of the present invention.
FIG. 4 is a graph illustrating a method of forming an oxide thin film according to an embodiment of the present invention, which shows a change in a flat band voltage according to a plasma power.

Other advantages and features of the present invention and methods for accomplishing the same will be apparent from the following detailed description of embodiments thereof taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and the present invention is only defined by the scope of the claims. Although not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. A general description of known configurations may be omitted so as not to obscure the gist of the present invention. In the drawings of the present invention, the same reference numerals are used as many as possible for the same or corresponding configurations. To facilitate understanding of the present invention, some configurations in the figures may be shown somewhat exaggerated or reduced.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises", "having", or "having" are intended to specify the presence of stated features, integers, steps, operations, components, Steps, operations, elements, parts, or combinations thereof, whether or not explicitly described or implied by the accompanying claims.

The method of depositing a plasma atomic layer according to an embodiment of the present invention may be carried out in accordance with a target flat-band voltage level of an oxide thin film to be deposited on a substrate or a target threshold voltage level of a transistor including an oxide thin film Calculates a power of the plasma, and generates a plasma in the plasma atomic layer deposition chamber in accordance with the calculated power of the plasma. According to the embodiment of the present invention, the flat band voltage of the oxide thin film and the threshold voltage of the transistor can be designed to a desired value by controlling the plasma power.

1 is a schematic diagram of a plasma atomic layer deposition apparatus 10 according to an embodiment of the present invention. 1, a plasma atomic layer deposition apparatus 10 according to an embodiment of the present invention includes a chamber 110, a substrate support 120, a supply unit 130, an exhaust unit 140, an electrode unit 150, A plasma generator 160, a matching unit 170, a showerhead 180, an input unit 190, and a control unit 200.

The chamber 110 provides a space in which the plasma process is performed. The substrate support 120 supports the substrate S within the chamber 110. The supply part 130 supplies the precursor material, the reactive material, and the purge gas to the chamber 110. The discharge unit 140 discharges the gas in the chamber 110 to the outside. The electrode unit 150 is installed in the chamber 110 and forms a plasma state in the chamber 110 according to the plasma power generated by the plasma generating unit 160. The plasma generator 160 applies a plasma power supply signal having a predetermined plasma power to the electrode unit 150.

In an embodiment of the present invention, the supply unit 130 may supply a precursor gas, a plasma source gas, and a purge gas to the chamber 110. In other words, the supply unit 130 can supply various kinds of gases (in particular, the precursor gas and the plasma source gas) one by one without supplying them at a time when the process is performed.

FIG. 2 is a view illustrating a process of performing plasma atomic layer deposition according to an embodiment of the present invention. Referring to FIG. 2, after the substrate S is disposed in the chamber 110, the supply unit 130 supplies the precursor material to the chamber 110 at a predetermined first flow rate for a predetermined first time t 1 do. Then, the supply unit 130 supplies the purge gas to the chamber 110 for a predetermined second flow rate for a predetermined second time t 2 .

Then, supply unit 130 is supplied by a third predetermined flow rate for the third time (t 3) preset the plasma source gas in the chamber 110. Then, the supply unit 130 supplies the purge gas by the second flow rate for the second time t 2 . In this way, the supply unit 130 can deposit a thin film of atomic layer unit on the substrate S by supplying the process gas to the chamber 110 in the order of the precursor material, the purge gas, the plasma source gas, and the purge gas. Further, the supply part 130 can deposit the oxide thin film on the substrate S by a target thickness by repeating the cycle a predetermined number of times by one cycle of supplying the precursor material, the purge gas, the plasma source gas, and the purge gas .

Referring to FIG. 1 again, the electrode unit 150 receives a power supply signal having a predetermined plasma power from the plasma generator 160, and converts the plasma source gas supplied to the chamber 110 into a plasma state. In one embodiment, the electrode unit 150 may include an upper electrode and a lower electrode that are disposed to face each other with the substrate S therebetween and form an electric field in the chamber 110. That is, the electrode unit 150 may be a capacitively coupled plasma (CCP) type plasma source. The electrode unit 150 shown in FIG. 1 may include an upper electrode disposed on the upper portion of the chamber 110 and a lower electrode (not shown) disposed on the substrate supporting unit 120.

According to another embodiment, the electrode portion 150 may include a coil installed on the top or side of the chamber 110 to form an electromagnetic field in the chamber 110. In other words, the electrode unit 150 may be provided as a plasma source of ICP (Inductively Coupled Plasma) type. According to the embodiment, the electrode unit 150 may include both a coil, which is an ICP type plasma source, and a parallel plate electrode, which is a CCP type plasma source.

The plasma generator 160 supplies a power supply signal having a predetermined plasma power to the electrode unit 150. The plasma generator 160 may excite the oxygen of the reactant in the chamber 110 into a plasma state to produce plasma oxygen in the chamber 110. The impedance matching unit 170 is connected between the plasma generating unit 160 and the electrode unit 150 to match the output impedance of the plasma generating unit 160 with the input impedance of the electrode unit 150. The shower head 180 is provided on the top of the substrate S to uniformly supply the plasma generated by the electrode unit 150 onto the substrate S. [

Although not shown in FIG. 1, the atomic layer deposition apparatus 10 may further include a heating unit installed in the substrate supporting unit 120 to heat the substrate S. The heating unit can achieve a process temperature for forming a thin film on the substrate S by maintaining or adjusting the substrate S at a predetermined temperature during the process. The discharge unit 140 may discharge gas or reaction by-products remaining in the chamber 110 using a pump or the like, out of the chamber. In addition, the exhaust unit 140 may adjust the pressure in the chamber to a predetermined pressure during the process.

According to one embodiment of the present invention, the supply 130 may supply trimethylaluminum (TMA), Al (CH 3 ) 3 , for example, to the chamber 110 as a precursor material. Then, the supply part 130 can supply oxygen (O 2 ) to the chamber 110 as a plasma source gas. Further, the supply unit 130 may supply argon (Ar) to the chamber 110 as a purge gas. Thereby, the atomic layer deposition apparatus 10 can deposit an aluminum oxide (Al 2 O 3 ) thin film on the substrate S on an atomic layer basis.

The input unit 190 may allow the operator to set the target flat band voltage level of the oxide thin film to be deposited on the substrate S by the plasma atomic layer deposition apparatus 10 or the target threshold voltage of the transistor including the oxide thin film a threshold voltage value can be input. The plasma power is adjusted according to the target flat band voltage level of the oxide thin film input through the input unit 190 or the target threshold voltage level of the transistor.

The controller 200 calculates the power of the plasma according to the target flat band voltage level of the oxide thin film to be deposited on the substrate or the target threshold voltage level of the transistor including the oxide thin film, 160). In one embodiment of the present invention, the controller 200 calculates the power of the plasma to a relatively low value when the target flat band voltage level or the target threshold voltage level is relatively low, and outputs the target flat band voltage level or the target threshold voltage When the level is relatively high, the power of the plasma can be calculated to a relatively high value.

A memory (not shown) may store a plasma power value corresponding to each of a plurality of threshold voltage levels (or a plurality of flat band voltage levels). The controller 200 reads the plasma power value corresponding to the target threshold voltage level from the memory and controls the plasma generator 160 to generate the plasma power according to the plasma power value. The control unit 200 may include at least one processor.

1 and 2, the plasma generator 160 may generate a power supply signal having a power of the calculated plasma and supply it to the electrode unit 150 while the plasma source gas is supplied to the chamber 110 have. Therefore, the plasma power may be applied for a third time (t 3) to the electrode 150.

3 is an exemplary flow diagram of a method for forming an oxide thin film using plasma atomic layer deposition according to an embodiment of the present invention. The plasma atomic layer deposition method for depositing the oxide thin film on the substrate S by atomic layer can be performed using the atomic layer deposition apparatus 10 according to the embodiment of the present invention described above. Referring to FIG. 3, the oxide thin film forming method includes a step S210 of supplying a precursor material to a chamber 110 in which a substrate S is disposed, a step S220 of supplying purge gas to the chamber 110, A step S230 of applying a plasma power to the electrode unit 150 provided in the chamber 110 while supplying a plasma source material to the chamber 110 and a step S240 of supplying purge gas to the chamber 110 and purging the chamber 110, . ≪ / RTI >

The oxide thin film forming method can deposit the oxide thin film on the substrate S by a predetermined number of cycles by repeating the above-described steps S210 to S240 in one cycle and depositing the oxide thin film by the target thickness. According to one embodiment, supplying (S210) the precursor material may include supplying trimethyl aluminum (TMA) to the chamber 110.

According to one embodiment, the step (S230) for applying a plasma power supply and the plasma source material may include the step of supplying oxygen (O 2) in the chamber (110). That is, a reaction material excited in a plasma state is formed in the chamber 110. Accordingly, the reactant excited into the plasma state may contain plasma oxygen.

In step S230, the power of the plasma is set to a value corresponding to the target flat band voltage level of the oxide thin film to be deposited on the substrate or the target threshold voltage level of the transistor including the oxide thin film to form an oxide thin film on the substrate can do. In one embodiment of the present invention, if the target flat band voltage level or the target threshold voltage level is relatively low, the power of the plasma is set to a relatively low value, and if the target flat band voltage level or the target threshold voltage level is relatively low The power of the plasma can be set to a relatively high value.

The purging step S240 may include supplying argon (Ar) to the chamber 110. According to one embodiment of the present invention, the oxide thin film forming method may further include heating the substrate S to a predetermined temperature before supplying the precursor material (S210).

According to an embodiment of the present invention, gate oxide films are deposited by plasma-enhanced atomic layer deposition (PE-ALD) can do. As the plasma power is changed, the mass density of the thin film is changed. As a result, the flat band voltage (V FB ) and the threshold voltage of the metal-oxide-semiconductor field effect transistor Can be effectively controlled.

In a transistor of an electric field element, adjusting the threshold voltage (V Th ) in the gate oxide / metal gate stacked structure is one of the big issues. The threshold voltage is a starting voltage for determining the start of operation of the electric field transistor element. The threshold voltage is determined by the degree of dipole formation between the oxide layer and the substrate. The degree of the threshold voltage is determined by the capacitance- (V FB ) of the output voltage V FB .

FIG. 4 is a graph illustrating a method of forming an oxide thin film according to an embodiment of the present invention, which shows a change in a flat band voltage according to a plasma power. Al 2 O 3 was deposited to a thickness of 10 nm on the p-Si substrate by plasma enhanced atomic layer deposition, and Ru was deposited thereon. A change in capacitance according to an applied voltage was measured for the thus fabricated device, and the result is shown in FIG. At this time, the plasma power was changed to 100W, 200W, and 300W.

The flat band voltage can be determined as the voltage corresponding to the inflection point of the capacitance-voltage (CV) curve. Referring to FIG. 4, it can be seen that, in the plasma enhanced atomic layer deposition process, as the plasma power increases, the flat band voltage V FB shifts to the right. As the plasma power increases, the flat band voltage (V FB ) moving in the positive direction can be explained from the change of the areal density of oxygen. An important factor in determining the flat band voltage (V FB ) is the areal density of oxygen between the oxide layer and the substrate. When the oxygen surface density of the substrate and the oxide layer are different, when the two substrates are formed, the oxygen surface density moves in the direction that the oxygen surface density is equalized by the free energy of the interface.

When two thin films having different oxygen area densities are combined to form an interface, oxygen moves due to free energy at the interface, thereby forming a dipole. Since the area density of oxygen increases as the plasma power increases, the polarization of the dipole formed becomes larger. As a result, it can be assumed that as the plasma power is increased, the flat band voltage V FB of the oxide thin film becomes larger in the positive direction, and the threshold voltage of the transistor including the oxide thin film is also changed.

As described above, according to the embodiment of the present invention, it is possible to control a flat band voltage of a metal oxide semiconductor by controlling a plasma power, and to manufacture a transistor having a desired threshold voltage have. In addition, according to embodiments of the present invention, the effective work function of the field effect transistor can be controlled by adjusting the plasma power of the atomic layer deposition method.

It is to be understood that the above-described embodiments are provided to facilitate understanding of the present invention, and do not limit the scope of the present invention, and it is to be understood that various modifications are possible within the scope of the present invention. It is to be understood that the technical scope of the present invention should be determined by the technical idea of the claims and the technical scope of protection of the present invention is not limited to the literary description of the claims, To the invention of the invention.

100: Plasma atomic layer deposition apparatus
110: chamber
120:
130:
140:
150:
160: Plasma generating unit
170:
180: Shower head
190: Input unit
200:

Claims (12)

A chamber for providing a space in which the process is performed;
A plasma generator installed in the chamber to generate plasma in the chamber; And
And a control unit for calculating the power of the plasma according to a target flat-band voltage level of the oxide thin film to be deposited on the substrate, and controlling the plasma generating unit according to the calculated power of the plasma,
Wherein the controller calculates a higher power of the plasma as the target flat band voltage level is higher. delete The method according to claim 1,
A substrate support disposed within the chamber and supporting the substrate;
A supply part for supplying a precursor material, a purge gas and a reaction material into the chamber; And
Further comprising an exhaust portion for exhausting the substance in the chamber,
Wherein the plasma generating unit excites oxygen of the reactant into a plasma state to generate plasma oxygen in the chamber. A plasma atomic layer deposition apparatus for depositing an oxide thin film to manufacture a transistor,
A chamber for providing a space in which the process is performed;
A plasma generator installed in the chamber to generate plasma in the chamber; And
And a controller for calculating the power of the plasma according to a target threshold voltage level of the transistor and controlling the plasma generator according to the calculated power of the plasma,
Wherein the controller calculates a higher power of the plasma as the target threshold voltage level is higher. delete A method of forming an oxide thin film using a plasma atomic layer deposition in which a precursor material and a reactive material are sequentially supplied onto a substrate and a plasma is formed to deposit an oxide thin film on the substrate,
And setting an electric power of the plasma to a value corresponding to a target flat-band voltage level of an oxide thin film to be deposited on the substrate to form an oxide thin film on the substrate,
Wherein the step of forming the oxide thin film sets the power of the plasma to a higher value as the target flat band voltage level is higher. delete The method according to claim 6,
Wherein forming the oxide thin film comprises:
Supplying a precursor gas to a chamber in which the substrate is disposed;
Supplying a purge gas to the chamber;
Forming a reaction material excited in a plasma state in the chamber; And
And supplying a purge gas to the chamber. ≪ RTI ID = 0.0 > 11. < / RTI > 9. The method of claim 8,
Wherein the reactive material excited in the plasma state is a plasma atomic layer deposition containing plasma oxygen. A method of manufacturing a transistor comprising sequentially supplying a precursor material and a reactive material onto a substrate, and forming a plasma to deposit an oxide thin film on the substrate,
And forming an oxide thin film on the substrate by setting the power of the plasma to a value corresponding to a target threshold voltage level of the transistor,
Wherein the step of forming the oxide thin film sets the power of the plasma to a higher value as the target threshold voltage level is higher. delete 11. The method of claim 10,
Wherein forming the oxide thin film comprises:
Supplying a precursor gas to a chamber in which the substrate is disposed;
Supplying a purge gas to the chamber;
Forming a reaction material excited in a plasma state in the chamber; And
And supplying a purge gas to the chamber,
Wherein the reactive material excited in the plasma state comprises plasma oxygen.
KR1020150042459A 2015-03-26 2015-03-26 Apparatus for plasma enhanced atomic layer deposition and method for forming thin film oxides using the same KR101662194B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150042459A KR101662194B1 (en) 2015-03-26 2015-03-26 Apparatus for plasma enhanced atomic layer deposition and method for forming thin film oxides using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150042459A KR101662194B1 (en) 2015-03-26 2015-03-26 Apparatus for plasma enhanced atomic layer deposition and method for forming thin film oxides using the same

Publications (2)

Publication Number Publication Date
KR20160116171A KR20160116171A (en) 2016-10-07
KR101662194B1 true KR101662194B1 (en) 2016-10-31

Family

ID=57145598

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150042459A KR101662194B1 (en) 2015-03-26 2015-03-26 Apparatus for plasma enhanced atomic layer deposition and method for forming thin film oxides using the same

Country Status (1)

Country Link
KR (1) KR101662194B1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423653B1 (en) 2000-01-11 2002-07-23 Taiwan Semiconductor Manufacturing Company Reduction of plasma damage for HDP-CVD PSG process
KR100560963B1 (en) 2003-09-30 2006-03-15 삼성전자주식회사 Method of forming material using atomic layer deposition process, method of forming thin film, and method of forming capacitor using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423653B1 (en) 2000-01-11 2002-07-23 Taiwan Semiconductor Manufacturing Company Reduction of plasma damage for HDP-CVD PSG process
KR100560963B1 (en) 2003-09-30 2006-03-15 삼성전자주식회사 Method of forming material using atomic layer deposition process, method of forming thin film, and method of forming capacitor using the same

Also Published As

Publication number Publication date
KR20160116171A (en) 2016-10-07

Similar Documents

Publication Publication Date Title
JP7126381B2 (en) Film forming apparatus and film forming method
KR102690416B1 (en) Film formation method and film formation equipment
KR100892789B1 (en) Susceptor device for semiconductor processing, film forming apparatus, and film forming method
US9163309B2 (en) Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KR101991574B1 (en) Film forming apparatus and gas injection member user therefor
KR102309936B1 (en) Method of processing target object
KR20170044602A (en) Method for depositing dielectric film in trenches by PEALD
KR101577964B1 (en) Method of forming titanium nitride film, apparatus for forming titanium nitride film, and storage medium storing program
KR20150075362A (en) Method of forming contact layer
KR101759769B1 (en) METHOD OF FORMING Ti FILM
CN111108581A (en) High aspect ratio deposition
KR102205227B1 (en) Boron-based film forming method and boron-based film apparatus
US20200343091A1 (en) Workpiece processing method
CN113035707A (en) Substrate processing method and substrate processing apparatus
KR20190102275A (en) Nitride film formation method
KR20210078264A (en) Method of processing substrate
KR101662194B1 (en) Apparatus for plasma enhanced atomic layer deposition and method for forming thin film oxides using the same
US20120322222A1 (en) Method for improving capacitance uniformity in a mim device
KR101596329B1 (en) Apparatus and method for performing plasma enhanced atomic layer deposition employing very high frequency
JP7278456B2 (en) Plasma processing equipment
KR101942819B1 (en) Method for forming thin film
US10685848B2 (en) Workpiece processing method
TW201725280A (en) Atomic layer deposition apparatus and semiconductor process
JP2022533699A (en) SixNy as a nucleation layer for SiCxOy
KR102125474B1 (en) Method for Deposition of Thin Film

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
FPAY Annual fee payment

Payment date: 20190926

Year of fee payment: 4