KR101657076B1 - Method of forming fine pattern - Google Patents
Method of forming fine pattern Download PDFInfo
- Publication number
- KR101657076B1 KR101657076B1 KR1020150090299A KR20150090299A KR101657076B1 KR 101657076 B1 KR101657076 B1 KR 101657076B1 KR 1020150090299 A KR1020150090299 A KR 1020150090299A KR 20150090299 A KR20150090299 A KR 20150090299A KR 101657076 B1 KR101657076 B1 KR 101657076B1
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- width
- photoresist
- weight
- photopattern
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
Abstract
Description
The present invention relates to a method of forming a fine pattern, and more particularly, to a method of forming a fine pattern capable of forming a fine line width through plasma etching after a printing process.
Recently, a pattern of various functional materials is required for electronic devices. For example, a conductive pattern for an electrode, a black matrix pattern and a color pattern for a color filter, an insulation pattern for a thin film transistor (TFT) and a resist pattern are required, and various printing techniques for forming such a pattern have been developed .
In general, a fine pattern used in a touch sensor is mainly formed by a photolithography process using a photoresist. This has the advantage of precisely obtaining the desired pattern, but it is disadvantageous in that the process is complicated and the cost of the chemical per process is too high. Accordingly, in order to overcome the disadvantages of the photolithography process, a technique of obtaining a fine pattern by roll printing, imprinting, and inkjet method as one of the next generation processes has been proposed.
Most electrode printing processes can be performed by direct printing of Ag ink to achieve process simplification by a single process, but the electrical conductivity of the printed wiring is lower than that of the pure metal and the adhesion of the printed wiring to the substrate is also excellent Resulting in poor product quality.
Accordingly, when the wiring is formed by printing and etching the etching resist after the sputtering deposition, the existing electrical conductivity and adhesion to the substrate are remarkably excellent compared with other methods, so that product defects do not occur. In addition, since the etching resist contains no conductive metal particle component as compared with the conductive ink, the printing property and the pattern property are superior to the photolithography.
The conventional method of manufacturing a touch screen using an etching resist is a method of fabricating a metal mesh touch screen using a method in which a line width of a lower metal line is further reduced than a line width of a resist printed by applying an over- Respectively. In other words, the resist printing was printed at 8 μm, which is more easily produced than the printing failure limit (5 μm) of the reverse offset printing process, and the bottom metal line was reduced to 3 μm by overetching to produce a touch screen.
However, the overetching has a problem that the straightness of the line width becomes very poor, resulting in poor electrical conductivity of the finished touch screen panel (TSP), and in addition, the line width is sometimes cut off, resulting in product failure. As a result, it has been devised to minimize the change in the straightness when the line width of the resist is made smaller than the line width of the resist without performing overetching.
The present invention provides a method of forming a fine pattern by forming a fine line width through plasma etching after a printing process to obtain a desired precise pattern and improving the process cost and efficiency.
A method of forming a fine pattern according to an embodiment of the present invention includes forming a metal layer on a base substrate, forming a first phot pattern having a first width through a roll printing process using a photoresist ink on the metal layer, A second photopattern having a second width smaller than the first width is formed by oxygen plasma treatment to reduce the width and thickness of the first photopattern and the metal layer is etched using the second photopattern as a mask Forming a metal pattern, and heating the second photopattern to form a reflow photoresist layer which surrounds the upper and side portions of the metal pattern to insulate the metal pattern.
According to an embodiment of the present invention, the metal layer may be formed by depositing at least one selected from the group consisting of aluminum (Al), nickel (Ni), and copper (Cu) through a sputtering process.
According to an embodiment of the present invention, the photoresist ink comprises 5 to 30% by weight of an acrylic binder, 20 to 50% by weight of a first solvent having a boiling point of 150 ° C or higher and 25 to 50% %. ≪ / RTI >
According to an embodiment of the present invention, the first solvent may be butyl cellosolve (BC), and the second solvent may be ethyl acetate (EA).
According to an embodiment of the present invention, 1 to 3 parts by weight of a dye and 0.01 to 2 parts by weight of a surfactant may be further added to 100 parts by weight of the photoresist ink.
Also, according to an embodiment of the present invention, the roll printing process may be reverse offset printing.
According to an embodiment of the present invention, the first width may be 5 to 10 탆.
Also, according to an embodiment of the present invention, the oxygen plasma treatment may be performed for 30 to 90 seconds by generating an oxygen plasma by flowing oxygen gas at 50 to 150 sccm while applying an RF power of 50 to 300 W.
According to an embodiment of the present invention, the second width may be 1 to 3 탆.
According to an embodiment of the present invention, the second photopattern may be heated to 100 to 120 ° C to form the reflow photoresist layer.
In embodiments of the present invention, in the method of forming a fine pattern and the method of manufacturing a metal mesh touch screen, after the printing process, the width of the photo pattern is reduced through plasma etching of the photo pattern to form a mesh pattern having a fine line width, A precise pattern can be obtained, and the process cost and efficiency can be improved.
1 to 8 are sectional views for explaining a method of forming a fine pattern according to an embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided to fully convey the spirit of the present invention to a person having ordinary skill in the art to which the present invention belongs. The present invention is not limited to the embodiments shown herein but may be embodied in other forms. For the sake of clarity, the drawings are not drawn to scale, and the size of the elements may be slightly exaggerated to facilitate understanding.
1 to 8 are sectional views for explaining a method of forming a fine pattern according to an embodiment of the present invention.
1 to 8, a method of forming a fine pattern and a method of manufacturing a metal mesh touch screen will be described below.
Referring to FIG. 1, a metal layer M is formed on a
For example, the metal layer M may include at least one selected from the group consisting of aluminum (Al), nickel (Ni), and copper (Cu) .
The metal layer (M) may be formed by vapor deposition through a sputtering process.
For example, the metal layer M may be deposited to a thickness of 50 to 500 nm.
2 to 5, a first photoprint PR 'having a first width W1 is formed on the metal layer M through a roll printing process using photoresist ink PR.
The first photopattern PR 'may be formed through a roll printing process. For example, the roll printing process may be a reverse offset printing process.
The printing roll includes a roll (R) and a blanket (B) provided to surround the surface of the roll (R). A photoresist ink PR is coated on the blanket B of the roll R by using a coater C,
Subsequently, the blanket (B) of the printing roll is brought into contact with the clit (C) to remove part of the photoresist ink (PR) from the blanket (B) 1 photo pattern PR '. Then, the first photoprint (PR ') is transferred to the metal layer (M) by contacting the blanket (B) of the printing roll with the metal layer (M). The cliche C may have a pattern of a specific width so that the first photopattern PR 'has a desired width.
The photoresist ink (PR) comprises 5 to 30% by weight of an acrylic binder, 20 to 50% by weight of a first solvent having a boiling point of 150 캜 or higher and 25 to 50% by weight of a second solvent having a boiling point of lower than 150 캜.
The acrylic binder may be a thermoplastic acrylic resin, but is not limited thereto. For example, the acrylic binder may be LGR-7103 of U.K.
The acrylic binder may comprise 5 to 30 wt% of the photoresist ink (PR), and when the acrylic binder is less than 5 wt% of the photoresist ink (PR), the viscosity of the photoresist ink (PR) The photoresist ink PR is too low to form a photo pattern having a desired thickness. When the binder resin is more than 30% by weight of the photoresist ink PR, the viscosity of the photoresist ink PR becomes too high, There is a problem that it is difficult to coat the photoresist ink PR. Accordingly, the acrylic binder preferably contains 5 to 30% by weight of the photoresist composition.
The weight average molecular weight of the acrylic binder may be about 3,000 to 50,000 in order to have a proper density while the photoresist ink PR is stably coated on the metal layer M. [ When the weight average molecular weight of the acrylic binder is less than 3,000, there is almost no effect that the acrylic binder contributes to the exposure margin and the heat resistance of the photoresist ink PR. When the weight average molecular weight of the acrylic binder is more than 50,000 The acrylic binder is hardly dissolved in the solvent. Preferably, the weight average molecular weight of the acrylic binder may be 16,000.
The photoresist ink (PR) comprises a solvent, which may comprise a first solvent and a second solvent. The first solvent has low volatility and is excellent in storage stability. The second solvent has high volatility, so that the solvent can be easily dried to cure the photopattern. These two solvents can be used in combination. That is, as the addition amount of the solvent having low volatility is increased, the storage stability is improved. On the other hand, as the amount of the solvent having a high volatility is increased, drying is easy.
When the amount of the first solvent is less than 20% by weight, the storage stability is not sufficiently exhibited. When the amount of the first solvent is more than 50% by weight, the volatility is low and drying of the photopattern is disadvantageous. When the second solvent is less than 25% by weight, the volatility is high, which is susceptible to coating unevenness. When the second solvent is more than 50% by weight, the storage stability is lowered.
For example, the first solvent may be butyl cellosolve (BC), and the second solvent may be ethyl acetate (EA).
1 to 3 parts by weight of a dye and 0.01 to 2 parts by weight of a surfactant may be further added to 100 parts by weight of the photoresist ink (PR).
The dye is for reducing the visibility of a fine pattern formed later, and may include a black dye. The black dye may be carbon black or the like.
Examples of the surfactant include polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, F171, F172, F173 (trade name, manufactured by Dai Nippon Ink), and the like. , FC430, FC431 (trade name, manufactured by Sumitomo Trimm Co., Ltd.) and KP341 (trade name, Shinwol Chemical Industry Co., Ltd.).
The photoresist ink PR may further include a catalyst for promoting the etching of the phot pattern at a later time, and the catalyst may further include HFE-7500 of 3M as a fluorine compound, May be included in an amount of 1 to 3 parts by weight based on 100 parts by weight of the ink (PR).
The first photopattern PR 'may have a first width W1, wherein the first width W1 may be between 5 and 10 μm. Preferably, the first width is greater than 5 占 퐉, which is the printing deficiency limit value of the reverse offset printing process. However, when the first width is 10 mu m, it is difficult to form a sufficiently fine metal pattern thereafter.
The solvent in the first photopattern PR 'may be removed and dried to cure the first photopattern PR'. Further, through the drying, the first photoprint (PR ') can be brought into close contact with the metal layer (M). In addition, a smooth surface can be formed while removing fine bubbles of the first photoprint (PR ') through the drying.
For example, the drying may be carried out at 80 to 100 DEG C for 10 to 30 minutes.
6, an oxygen plasma treatment is performed to reduce the width and thickness of the first photopattern PR ', thereby forming a second photopattern PR (PR) having a second width W2 smaller than the first width W1, ").
For example, the oxygen plasma may generate particles (PT) by flowing oxygen gas at 50 to 150 sccm while applying an RF power of 50 to 300 W to reduce the width and thickness of the first photoprint (PR ') And this oxygen plasma treatment can be performed for 30 to 90 seconds. Thus, the second photoprint PR "can be formed.
Accordingly, the second photopattern PR "may have a second width W2. The second width may be 1 to 3 [micro] m, and preferably 2 [micro] m or less.
It is difficult to sufficiently reduce the width of the first photoprint (PR ') because oxygen gas is less than 50 sccm or the treatment time is less than 30 seconds in the oxygen plasma treatment, In the case of more than 150 sccm or a processing time of more than 90 seconds, there is a problem that the width of the first photoprint (PR ') is excessively reduced due to a large amount of particles (PT).
Referring to FIG. 7, the metal layer M is etched using the second photopattern PR '' as a mask to form a metal pattern MP.
The metal layer M is etched using an etchant that etches the metal layer M that includes aluminum (Al), including but not limited to, for example, phosphoric acid, nitric acid, and acetic acid. have.
The metal pattern M may be formed by immersing the metal layer M for 30 to 60 seconds using the etchant to remove a portion of the metal layer M. [
Referring to FIG. 8, a reflow photoresist layer PR '' 'for heating the second photopattern PR "to insulate the metal pattern MP by covering the top and sides of the metal pattern MP, .
The second photoprint PR "is formed on the upper surface of the metal pattern MP, but the second photoprint PR" is heated to 100 to 120 ° C. to form the second photoprint PR " May flow into the metal pattern MP to form the reflow photoresist layer PR '' '. Accordingly, the reflow photoresist layer PR '' 'may be formed to surround the top and sides of the metal pattern MP.
Since the reflow photoresist layer PR '' 'surrounds the top and sides of the metal pattern MP and the reflow photoresist layer PR' '' has a deep blue color, the metal pattern MP ' ) Can be reduced.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited thereto. Those skilled in the art will readily obviate modifications and variations within the spirit and scope of the appended claims. It will be understood that various changes and modifications may be made therein without departing from the spirit and scope of the invention.
100: Base substrate PR: Photoresist
PR ': first photo pattern PR'': second photo pattern
PR ''': Reflow photoresist layer PT: Particle
C: Cleanser B: Blanket
R: roll M: metal layer
Claims (10)
Forming a first photopattern having a first width through a roll printing process using a photoresist ink on the metal layer;
Forming a second photopattern having a second width smaller than the first width by oxygen plasma treatment to reduce the width and thickness of the first photopattern;
Etching the metal layer using the second photopattern as a mask to form a metal pattern; And
And heating the second photopattern to form a reflow photoresist layer covering the top and sides of the metal pattern to insulate the metal pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150090299A KR101657076B1 (en) | 2015-06-25 | 2015-06-25 | Method of forming fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150090299A KR101657076B1 (en) | 2015-06-25 | 2015-06-25 | Method of forming fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR101657076B1 true KR101657076B1 (en) | 2016-09-20 |
Family
ID=57102107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150090299A KR101657076B1 (en) | 2015-06-25 | 2015-06-25 | Method of forming fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101657076B1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059834A (en) * | 2007-08-31 | 2009-03-19 | Hitachi Displays Ltd | Pattern formation method, and method of manufacturing display device using the formation method |
| KR20100090670A (en) | 2009-02-06 | 2010-08-16 | 주식회사 엘지화학 | Conductive patterns and method for manufacturing the same |
| KR101080861B1 (en) * | 2009-01-07 | 2011-11-07 | 도쿄엘렉트론가부시키가이샤 | Method for forming fine pattern |
| KR20120113682A (en) * | 2011-04-05 | 2012-10-15 | 주식회사 엘지화학 | Composition for printing and printing method using the same |
-
2015
- 2015-06-25 KR KR1020150090299A patent/KR101657076B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059834A (en) * | 2007-08-31 | 2009-03-19 | Hitachi Displays Ltd | Pattern formation method, and method of manufacturing display device using the formation method |
| KR101080861B1 (en) * | 2009-01-07 | 2011-11-07 | 도쿄엘렉트론가부시키가이샤 | Method for forming fine pattern |
| KR20100090670A (en) | 2009-02-06 | 2010-08-16 | 주식회사 엘지화학 | Conductive patterns and method for manufacturing the same |
| KR20120113682A (en) * | 2011-04-05 | 2012-10-15 | 주식회사 엘지화학 | Composition for printing and printing method using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2825006B1 (en) | Method for manufacturing insulated conductive pattern | |
| JP5486019B2 (en) | Conductive pattern and manufacturing method thereof | |
| JP6162897B2 (en) | Conductive substrate and method for manufacturing the same | |
| JP2020501375A5 (en) | ||
| KR20120085042A (en) | Method for manufacturing shadow mask for forming a thin layer | |
| WO2012161051A1 (en) | Method for manufacturing pattern structure | |
| KR101657076B1 (en) | Method of forming fine pattern | |
| KR100727439B1 (en) | Method for forming interconnection line | |
| CN106066574A (en) | Pattern Formation Method | |
| KR101250411B1 (en) | High Definition Printing Plate of Liquid Crystal Display and Method for Manufacture using the same | |
| TWI228389B (en) | Method for forming conductive plugs | |
| JP4808824B1 (en) | Method for manufacturing pattern structure | |
| KR102237716B1 (en) | Manufacturing method using fine metal mask | |
| KR101250422B1 (en) | High Definition Printing Plate of Liquid Crystal Display and Method for Manufacture using the same | |
| KR101211721B1 (en) | High Definition Printing Plate of Liquid Crystal Display and Method for Manufacture using the same | |
| TWI385267B (en) | Method of fabricating patterned metal oxide layer | |
| KR20140140675A (en) | A method of forming a metal patterns | |
| CN116314480A (en) | Preparation method of forward-mounted LED chip | |
| JP2013089772A (en) | Manufacturing method of pattern structure | |
| TW200534392A (en) | Etch method using dual anti-reflective layers | |
| TW201223367A (en) | Wiring formation method | |
| JP2004179200A (en) | Thin film device and its manufacturing method | |
| KR20080061596A (en) | Method of making semiconductor devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20190701 Year of fee payment: 4 |