KR101655465B1 - Semiconductor device having conformal coating layer and method for manufacturing the same - Google Patents

Semiconductor device having conformal coating layer and method for manufacturing the same Download PDF

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KR101655465B1
KR101655465B1 KR1020100037147A KR20100037147A KR101655465B1 KR 101655465 B1 KR101655465 B1 KR 101655465B1 KR 1020100037147 A KR1020100037147 A KR 1020100037147A KR 20100037147 A KR20100037147 A KR 20100037147A KR 101655465 B1 KR101655465 B1 KR 101655465B1
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South Korea
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conformal coating
layer
coating layer
tin plating
filler
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KR1020100037147A
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Korean (ko)
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KR20110117754A (en
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최장돈
한정기
이태형
김정태
김도섭
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현대자동차주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The present invention relates to a semiconductor device having a conformal coating layer and a method of manufacturing the same, and more particularly, to a semiconductor device having a conformal coating layer and a method of manufacturing the same, which prevents the whiskers from growing from a plated tin plating layer on an electronic circuit board and terminal portions of the electronic device, To a semiconductor device having a conformal coating layer so as to prevent a short circuit of the device, and a manufacturing method thereof.
To this end, the present invention provides a semiconductor device comprising: a tin plating layer coated on a terminal portion of a semiconductor package mounted on a mother board and a mother board of an electronic apparatus; A first conformal coating layer of a polymer material applied to the surface of the tin plating layer; A nonconductive filler layer applied to the first conformal coating layer to block the growth of whiskers; A second conformal coating layer coated over the nonconductive filler layer to fix the filler layer; And a method of manufacturing the semiconductor device.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device having a conformal coating layer and a method of manufacturing the same.

The present invention relates to a semiconductor device having a conformal coating layer and a method of manufacturing the same, and more particularly, to a semiconductor device having a conformal coating layer and a method of manufacturing the same, which prevents the whiskers from growing from a plated tin plating layer on an electronic circuit board and terminal portions of the electronic device, To a semiconductor device having a conformal coating layer so as to prevent a short circuit of the device, and a manufacturing method thereof.

BACKGROUND ART [0002] A semiconductor package mounted on various electronic apparatuses typically includes a chip attaching step of mounting a semiconductor chip in a chip attaching region of a substrate (a printed circuit board, a circuit film, and a lead frame), a wire bonding region To a conductive wire, and a molding process for protecting the semiconductor chip, the wire, and the like from the outside.

The semiconductor package 10 thus manufactured is mounted on the mother board 20 of the electronic apparatus so as to exchange electric signals, as shown in FIGS. 1 to 4 attached hereto.

At present, the engine, the transmission, and the electric components mounted on the vehicle are each controlled by a separate electronic control unit (ECU), and each of the electronic control units is also provided with a motherboard 20 and a plurality of semiconductor packages 10).

The semiconductor package 10 is manufactured in various types and structures. In general, a package manufactured using a lead frame includes a plurality of semiconductor chips (not shown) that serve as terminals to the outside of a molding compound resin 12 surrounding a semiconductor chip A lead 14 of a lead frame is protruded.

For reference, a semiconductor chip designed as a circuit element inputs / outputs various electrical signals through a lead 14 which is an input / output terminal.

The lead 14 connected to the semiconductor chip and the conductive wire (not shown) is connected to the conductive pattern 22 formed on the mother board 20 of the electronic device so that the semiconductor package 10 is electrically connected to the electronic device Which is mounted on the motherboard 20 of the display device 20 so as to be electrically exchangeable.

The lead 14 of the semiconductor package 10 and the conductive pattern 22 of the mother board 20 are made of a conductive material such as copper. Or silver plating is performed.

However, each lead, which serves as a terminal, is electrically connected to each other by a whisker (see the electron microscope photograph of Fig. 2 and Fig. 3), which is a monocrystal of "beard shape" growing from the tin plating layer of the lead of the semiconductor package, There is a problem that a short circuit between the leads occurs as shown in FIG. 4, and there is a risk that errors may occur in various electronic control devices mounted in the vehicle due to such a short circuit phenomenon.

One of the causes of the occurrence of the whiskers is that the surface of the tin plating layer is oxidized to expand the volume and pressure is applied to the tin plating layer as illustrated in FIG. 5A, The metal compound grows at the interface between the plated layer and the lead of the copper material and pressure is applied to the tin plating layer.

Conventionally, in order to solve such a problem caused by the growth of whiskers, there has been proposed a method of using a polymer material (acrylic, epoxy, silicone, urethane, rubber, etc.) for protecting electronic component parts from the external environment such as moisture and dust on the surface of the tin plating layer The conformer coating layer 70 is further formed to suppress the growth of the whiskers. However, as shown in FIG. 6, as the whiskers grow through the conformal coating layer 70, there is a possibility that a short circuit between the leads may occur There were disadvantages.

Disclosure of the Invention The present invention has been made in order to solve the above-mentioned problems of the prior art, and it is an object of the present invention to provide a semiconductor device and a method for manufacturing the semiconductor device, in which a conformal coating layer having a filler capable of bending a whisker on a plated tin- The present invention provides a semiconductor device having a conformal coating layer which can prevent whiskers from being completely grown from a tin plating layer and can completely prevent a short circuit of a semiconductor device and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a tin plating layer coated on a terminal portion of a semiconductor package mounted on a motherboard and a motherboard of an electronic device; A first conformal coating layer of a polymer material applied to the surface of the tin plating layer; A nonconductive filler layer applied to the first conformal coating layer to block the growth of whiskers; A second conformal coating layer coated over the nonconductive filler layer to fix the filler layer; The present invention also provides a semiconductor device having a conformal coating layer containing a conformal coating layer.

Preferably, the filler constituting the nonconductive filler layer is a mixture of a spherical filler and a plate-like filler.

More preferably, the filler is a nonconductive material and is made of any one of glass, ceramics, and polymers.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a tin plating layer by tin plating a terminal portion of a semiconductor package mounted on a mother board and a motherboard of an electronic device; Coating a surface of the tin plating layer with a polymer material to form a first conformal coating layer; Applying a nonconductive filler layer to the first conformal coating layer prior to curing the first conformal coating layer to block growth of the whisker; Forming a second conformal coating layer by coating a polymeric material on the nonconductive filler layer after curing the first conformal coating layer; Curing the second conformal coating layer; The method comprising the steps of: forming a conformal coating layer on a semiconductor substrate;

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a tin plating layer by tin plating a terminal portion of a semiconductor package mounted on a motherboard and a motherboard of an electronic device; Coating a surface of the tin plating layer with a polymer material to form a first conformal coating layer; Applying a nonconductive filler layer to the first conformal coating layer prior to curing the first conformal coating layer to block growth of the whisker; Forming a second conformal coating layer by coating a polymeric material on the nonconductive filler layer; Curing the first and second conformal coating layers simultaneously; The method comprising the steps of: forming a conformal coating layer on a semiconductor substrate;

Through the above-mentioned means for solving the problems, the present invention provides the following effects.

According to the present invention, a tin plating layer is coated on a terminal portion of an electronic circuit substrate and an electronic element constituting a semiconductor device, and then a conformal coating layer having a filler capable of bending the whiskers is further coated thereon, whereby whiskers grown from the tin plating layer So that the semiconductor device can be completely prevented from being short-circuited by the whiskers.

1 is a photograph showing a mother board and a semiconductor package of an electronic device,
FIG. 2 and FIG. 3 are electron micrographs and schematic views illustrating whisker growth phenomenon in a lead of a semiconductor package mounted on a motherboard,
4 and 5 are schematic views for explaining the cause of whisker growth,
FIG. 6 is a schematic view for explaining a conventional conformal coating layer for preventing whisker growth and its problems, and an electron microscope photograph,
7 is a schematic view showing a semiconductor device having a conformal coating layer according to the present invention,
8 is an electron micrograph illustrating the structure of the filler embedded in the conformal coating layer according to the present invention,
9 is a process diagram illustrating an embodiment of a method of manufacturing a semiconductor device having a conformal coating layer according to the present invention,
10 is a process diagram illustrating another embodiment of a method of manufacturing a semiconductor device having a conformal coating layer according to the present invention;

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 7 is a schematic view showing a semiconductor device having a conformal coating layer according to the present invention, and FIG. 8 is an electron micrograph illustrating a filler structure embedded in the conformal coating layer.

A tin plating layer is plated on a mother board of various electronic devices, a terminal portion of a semiconductor package mounted on the mother board, a conformal coating layer having a filler layer is formed, and the tin plating layer is grown The whiskers are blocked by the filler layer, thereby preventing a short circuit between the terminal portions due to the whiskers.

A conductive pattern 20 of the mother board 20 made of the terminal portions 14 and 22 of the semiconductor package 10 mounted on the mother board 20 of the electronic apparatus, that is, the printed circuit board (PCB) (Acrylic, epoxy, silicone, urethane, rubber) for protecting the electronic component parts from external environment such as moisture and dust after the tin plating layer 30 is formed on the surface of the semiconductor package 22 and the leads 14 of the semiconductor package. The first conformal coating layer 40 of the first conformal coating layer 40 is coated on the tin plating layer 30 and the nonconductive filler layer 50 and the second conformal coating layer 60 are sequentially coated on the first conformal coating layer 40 .

The nonconductive filler layer 50 applied to the first conformal coating layer 40 may be formed by bending the whiskers that penetrate the first conformal coating layer 40 so as not to protrude into the second conformal coating layer 60 And the second conformal coating layer 60 functions to mold and fix the round and plate-like fillers constituting the filler layer 50. [0053]

More specifically, the filler 52 constituting the nonconductive filler layer 50 is a mixture of spherical and plate-like particles made of any one of glass, ceramics, and polymers, which are nonconductive materials, And at the same time bends the whiskers passing through the first conformal coating layer to prevent further growth.

Hereinafter, a method of manufacturing the semiconductor device according to the present invention will be described in order.

First, a conductive pattern 22 made of a copper material is formed on a mother board 20 of various electronic devices such as an electronic control device in a vehicle, and a lead 14 (made of copper) fused to the conductive pattern 22 A tin plating layer 30 for preventing oxidation is formed.

Next, a step of forming a first conformal coating layer 40 made of a polymer on the surface of the tin plating layer 30 for protecting electronic component parts from external environment such as moisture and dust is performed.

The first conformal coating layer 40 is a polymer material such as acrylic, epoxy, silicone, urethane, or rubber, and examples of the composition are shown in Table 1 below.

Figure 112010025675943-pat00001

Then, a step of applying a nonconductive filler layer 50 blocking the growth of whiskers to the first conformal coating layer 40 is performed before curing of the first conformal coating layer 40.

In this case, the nonconductive filler layer 50 is applied before the first conformal coating layer 40 is cured, because each of the fillers constituting the nonconductive filler layer 50 is once adhered to the first conformal coating layer 40 In order to be in a state of being.

In other words, each of the fillers constituting the nonconductive filler layer 50 has spherical particles (diameter of 5 to 30 μm) made of any one of glass, ceramics, and polymers, which has a characteristic of being harder than a polymer constituting the conformal coating layer, 50 micrometer) and plate-like particles (thickness 5 to 50 micrometers) are blended together and applied randomly to the first conformal coating layer 40 before curing.

Next, after the first conformal coating layer 40 is cured, a step of forming a second conformal coating layer 60 made of the same material as the first conformal coating layer on the nonconductive filler layer 50 As a result, the second conformal coating layer 60 flows into not only the upper surface of the nonconductive filler layer 50 but also the internal gaps of the respective fillers, thereby fixing the fillers.

Finally, by hardening the second conformal coating layer 60, a semiconductor device having a conformal coating layer according to the present invention is completed.

In this way, even if the whiskers grow from the tin plating layer 30 to penetrate the first conformal coating layer 40, the whiskers are instantly bent as they touch the nonconductive filler layer 50, The short circuit phenomenon of the semiconductor device due to whiskers can be completely prevented.

After the non-conductive filler layer 50 is applied to the first conformal coating layer 40 before the first conformal coating layer 40 is cured, the second conformal coating layer 50 is formed on the non- The first and second conformal coating layers 40 and 60 may be cured at the same time.

10: Semiconductor package 12: Molding compound resin
14: Lead 20: Motherboard
22: conductive pattern 30: tin plating layer
40: first conformal coating layer 50: nonconductive filler layer
52: filler 60: second conformal coating layer

Claims (5)

A tin plating layer (30) coated on terminal portions (14, 22) of a semiconductor package (10) mounted on a mother board (20) and a mother board (20) of an electronic device;
A first conformal coating layer (40) of a polymer material coated on the surface of the tin plating layer (30) to protect the electronic component part from the external environment;
A nonconductive filler layer (50) applied to the first conformal coating layer (40) to block the growth of whiskers;
A second conformal coating layer 60 coated on the nonconductive filler layer 50 with the same material as the first conformal coating layer 40 to fix the filler layer 50;
And a conformal coating layer formed on the semiconductor substrate.
The method according to claim 1,
Wherein the filler (52) constituting the nonconductive filler layer (50) is a mixture of a spherical filler and a plate-like filler.
The method according to claim 1 or 2,
Wherein the filler (52) constituting the nonconductive filler layer (50) is made of any one material selected from the group consisting of glass, ceramics and polymers as a nonconductive material.
Forming a tin plating layer (30) by tin plating the terminal portions (14, 22) of the semiconductor package (10) mounted on the mother board (20) and the mother board (20) of the electronic device;
Forming a first conformal coating layer (40) on the surface of the tin plating layer (30) to protect the electronic component part from external environment by coating a polymer material on the surface of the tin plating layer (30);
Applying a nonconductive filler layer (50) to the first conformal coating layer (40) to block the growth of whiskers before curing the first conformal coating layer (40);
After the first conformal coating layer 40 is cured, the second conformal coating layer 60 is formed on the nonconductive filler layer 50 by coating the same polymer material as the first conformal coating layer 40 ;
Curing the second conformal coating layer (60) to fix the nonconductive filler layer (50);
And forming a conformal coating layer on the semiconductor substrate.
Forming a tin plating layer (30) by tin plating the terminal portions (14, 22) of a semiconductor package (10) mounted on a motherboard (20) and a motherboard (20) of an electronic device;
Forming a first conformal coating layer (40) on the surface of the tin plating layer (30) to protect the electronic component part from external environment by coating a polymer material on the surface of the tin plating layer (30);
Applying a nonconductive filler layer (50) to the first conformal coating layer (40) to block the growth of whiskers before curing the first conformal coating layer (40);
Forming a second conformal coating layer (60) on the nonconductive filler layer (50) by coating the same polymer material as the first conformal coating layer (40);
Curing the first and second conformal coating layers (40, 60) simultaneously to secure the nonconductive filler layer (50);
And forming a conformal coating layer on the semiconductor substrate.
KR1020100037147A 2010-04-22 2010-04-22 Semiconductor device having conformal coating layer and method for manufacturing the same KR101655465B1 (en)

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Publication number Priority date Publication date Assignee Title
KR100652444B1 (en) * 2005-11-24 2006-12-01 삼성전자주식회사 Semiconductor chip package having lead-free plating layer on lead, method for fabricating the same and semiconductor module having the same
US20070287024A1 (en) 2006-06-07 2007-12-13 Honeywell International, Inc. Abrasive powder coatings and methods for inhibiting tin whisker growth

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TWI463581B (en) * 2007-07-30 2014-12-01 Stats Chippac Ltd Semiconductor device and method of providing common voltage bus and wire bondable redistribution

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652444B1 (en) * 2005-11-24 2006-12-01 삼성전자주식회사 Semiconductor chip package having lead-free plating layer on lead, method for fabricating the same and semiconductor module having the same
US20070287024A1 (en) 2006-06-07 2007-12-13 Honeywell International, Inc. Abrasive powder coatings and methods for inhibiting tin whisker growth

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