KR101637005B1 - Method of producing UV photoconductive cell by using ZnO nanostructure - Google Patents
Method of producing UV photoconductive cell by using ZnO nanostructure Download PDFInfo
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- KR101637005B1 KR101637005B1 KR1020150040018A KR20150040018A KR101637005B1 KR 101637005 B1 KR101637005 B1 KR 101637005B1 KR 1020150040018 A KR1020150040018 A KR 1020150040018A KR 20150040018 A KR20150040018 A KR 20150040018A KR 101637005 B1 KR101637005 B1 KR 101637005B1
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- zinc oxide
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- photoconductive cell
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000011787 zinc oxide Substances 0.000 claims abstract description 51
- 239000010949 copper Substances 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims abstract description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 241001455273 Tetrapoda Species 0.000 description 11
- 239000011701 zinc Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000349 field-emission scanning electron micrograph Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 2
- 229940098221 silver cyanide Drugs 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011807 nanoball Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
The present invention relates to a method of manufacturing an ultraviolet photoconductive cell, and more particularly, to a method of manufacturing an ultraviolet photoconductive cell using a zinc oxide nanostructure that controls the flow of electrons in response to ultraviolet light.
Ultraviolet Photo Conductive Cell (UV PCC) is a semiconductor device that uses incident ultraviolet light to control electron flow. The ultraviolet photoconductive cell is also referred to as a photoresistor or LDR (Light Dependent Resistor). The electrical resistance of the sensor is changed by ultraviolet light absorbed by the light receiving portion. Materials commonly used in UV PCCs include zinc oxide (ZnO), titanium dioxide (TiO 2 ), which is a semiconductor having a wide energy band gap, . ZnO is a semiconductor having a band gap of 3.4 eV which is sensitive to ultraviolet rays. Nanostructured ZnO films are easier to fabricate than TiO 2 and can be deposited in large area at low cost.
The ZnO nanostructures can be nanorods, nanodots, nanowalls, nanoballs, nanowires, and nanotetrapodes. ZnO films must be made of films of high porosity nanostructures in order to increase the surface area and volume of electrons transported. One of the characteristics of ZnO nanofilms is that they can be obtained using low cost precursors.
In the meantime, in order to deposit ZnO tetrapods, chemical vapor deposition (CVD), thermal oxidation in a furnace, pulsed laser deposition (PVD) and vapor phase oxidation of zinc have been used conventionally . Most of the methods for preparing ZnO by oxidizing zinc in the vapor phase have a form of tetrapod or nanowire. However, when ZnO is produced in this way, a lot of power is consumed to heat the zinc.
Therefore, various methods and compounds exist to form ZnO nanostructures. However, it is necessary to study methods of reducing the formation time, power consumption, compounds, and synthesized surface shape control.
In general, photolithography, inkjet printing, and screen printing are mainly used to form fine metal electrodes. Ink-jet printing is disadvantageous in that it requires expensive ink and is too slow to form in a large area for industrial use. Although screen printing is a relatively inexpensive method, a process of sintering at 650 ° C to 800 ° C is required, which causes the substrate to deform beyond the critical temperature of the substrate. In addition, photolithography is a process that enables rapid and inexpensive patterning of many samples on multiple substrates compared to other methods. However, a silica photomask deposited with chronium used for photolithography is a process requiring a high cost to manufacture a small-sized pattern. Therefore, in order to manufacture an inexpensive sensor, it is required to reduce the cost of the mask and to print the photomask on the transparent film of the prototype.
That is, the high fabrication cost of the ultraviolet photoconductive cell is due to the use of a furnace and a CVD apparatus for deposition of a ZnO nanostructure, which is simple, and a method of depositing a ZnO nanostructure with low power consumption and low cost .
[Patent Document 1]: Japanese Patent Application Laid-Open No. 10-2012-0104565 (September 21, 2012)
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a method of manufacturing an ultraviolet photoconductive cell capable of fine photo patterning and having a high light response speed.
According to an aspect of the present invention, there is provided a method of manufacturing an ultraviolet photoconductive cell comprising: depositing copper on a substrate; Photo-patterning the substrate with copper deposited thereon; Etching the photo-patterned substrate; Silvering the patterned substrate after etching; Depositing a zinc oxide nanostructure on the silver plated substrate; And sealing the substrate with the zinc oxide nanostructure deposited thereon.
According to an embodiment of the present invention, the photo patterning may include: printing a photomask on a transparent film; And photo-patterning the substrate with the transparent film printed with the photomask.
The transparent film according to an embodiment of the present invention is preferably formed of polyimide, polyester or polyethylene teraphthalate.
The step of silver plating the post-eroded patterned substrate according to an embodiment of the present invention includes: washing the corroded substrate and drying it with N 2 gas; Washing the dried substrate with acetone; And immersing the substrate washed with acetone in a silver plating solution.
The step of depositing the zinc oxide nanostructure on the silver plated substrate according to an embodiment of the present invention includes the steps of: applying a zinc powder to a receiving portion to form a zinc powder layer; And evaporating and oxidizing the zinc powder using a microwave to deposit the silver powder onto the silver plated substrate.
The present invention as described above has an effect of rapidly and finely manufacturing an ultraviolet photoconductive cell by photo-patterning a transparent film using a photomask, and has excellent light responsiveness by depositing ZnO tetrapod.
1 is a conceptual diagram illustrating a method of manufacturing an ultraviolet photoconductive cell using ZnO tetrapod according to an embodiment of the present invention.
2 is a view of a photolithography mask printed transparent film using a laser printer according to an embodiment of the present invention.
3 is a view illustrating a method of manufacturing an ultraviolet photoconductive cell according to an embodiment of the present invention.
4 is an image of a metal bonded substrate manufactured according to an embodiment of the present invention, taken with a 3D microscope.
5 is an FESEM image of a glass substrate on which an Ag / Cu film is formed according to an embodiment of the present invention.
6 is an X-ray diffraction diagram of an ultraviolet photoconductive cell using a zinc oxide nanostructure manufactured according to an embodiment of the present invention.
7 is a view illustrating the operation principle of an ultraviolet photoconductive cell using a zinc oxide nanostructure manufactured according to an embodiment of the present invention.
8 is a graph showing voltage characteristics of an ultraviolet photoconductive cell using a zinc oxide nanostructure manufactured according to an embodiment of the present invention.
9 is a graph showing optical characteristics of an ultraviolet photoconductive cell using a zinc oxide nanostructure manufactured according to an embodiment of the present invention.
10 is a graph showing resistance characteristics of ultraviolet photoconductive cells using zinc oxide nanostructures prepared according to an embodiment of the present invention.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Terms including ordinals such as first, second, etc. may be used to describe various elements, but the elements are not limited by such terms. These terms are used only to distinguish one component from another.
When an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may be present in between . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.
The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a component, or a combination thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
1 is a conceptual diagram illustrating a method of manufacturing an ultraviolet photoconductive cell using ZnO tetrapod according to an embodiment of the present invention.
As shown in the drawing, a method of manufacturing an ultraviolet photoconductive cell using a zinc oxide nanostructure according to an embodiment of the present invention includes depositing copper on a substrate (S10), photo-patterning a substrate on which copper is deposited (Step S20), etching the photo-patterned substrate (S30), silvering the patterned substrate (S40), depositing the zinc oxide nanostructure on the silver-plated substrate (S50), and sealing the substrate (S60).
The step of depositing copper (S10) is a step of depositing copper on the substrate, and the substrate may be made of polymer, glass, ceramic, or the like.
As a method for depositing copper, a method using an evaporator and a sputtering method may be used. For example, in the step of depositing copper, a substrate may be mounted on a DC sputtering apparatus, and DC power may be applied to generate a plasma to deposit at 2.2 W /
The step S20 of photo-patterning the copper-deposited substrate is a step of printing a photoresist on a transparent film and patterning the photoresist using the photoresist. The photomask can be coated with a photoresist on the film by spin coating. For example, the photoresist can be spin coated on the substrate at 1500 rpm for about 45 seconds.
The film used for photopatterning may be a transparent polymeric film and may be printed using a conventional inkjet printer or laser printer when printing a photomask on the film. That is, a photomask having a desired shape can be patterned on a substrate by printing a photomask on a transparent film and then photo-patterning the photomask on the substrate. As the film for printing the photomask, polyimide, polyester, polyethylene teraphthalate or the like may be used. Further, a transparent film usable for an ink jet or laser printer can be used.
The step (S30) of corroding the photopatterned substrate is a step of corroding the copper portion of the exposed region with ultraviolet light. When the copper is corroded, the substrate is exposed and ultimately patterned like a photomask on ultraviolet light.
The step of silver plating the patterned substrate after the etching (S40) is a step of plating silver by depositing silver on the substrate using a substitution reaction. Comprising: silver plating a patterned substrate after the corrosion (S40) may include the step of washing the corroded substrate and deposited on the step and the silver plating solution, washing step, drying the substrate to dry by using a N 2 gas with acetone. The dry substrate can be washed with acetone to remove the photoresist from the un-corroded area. The silver plating solution may be a plating solution of a siver cyanide series. Silver plating solutions are used for electroless coating applications.
The step of depositing the zinc oxide nanostructure on the silver-plated substrate (S50) is a step of evaporating the Zn powder to form a zinc oxide nanostructure and depositing it on the substrate. In order to evaporate the Zn powder to form a zinc oxide nanostructure, the Zn powder is irradiated with a microwave to evaporate the Zn powder and oxidize it in the air to form a zinc oxide nanostructure. At this time, by controlling the generation of microwaves and controlling the temperature inside the chamber where the zinc powder is oxidized, a desired zinc oxide nanostructure can be formed and ZnO tetrapod can be formed. The microwave can be evaporated by heating the Zn powder to 500 占 폚 to 1600 占 폚. The zinc oxide nanostructure formed in this way, ZnO tetrapod, is condensed in the patterned nanostructure.
The step of sealing the substrate (S60) is a step of encapsulating the substrate on which the nanostructure is deposited by using a transparent polymer or an epoxy resin.
When the substrate is sealed, the photoconductive cell can be protected from moisture in the air and ultraviolet rays of oxygen.
The method of manufacturing an ultraviolet photoconductive cell using the zinc oxide nanostructure according to the present invention is characterized in that a photomask is printed on a transparent film and electroless coating is performed using a silver plating solution without using electricity, .
The present invention is better understood by the following examples and comparative examples, and the following examples are for the purpose of illustration of the present invention, and it is intended to limit the scope of protection defined by the appended claims no.
[Example 1]
The ultraviolet photoconductive cell was fabricated according to the method of manufacturing the ultraviolet photoconductive cell using the zinc oxide nanostructure of the present invention.
First, copper was deposited on a substrate for manufacturing an electrode pattern of an ultraviolet photoconductive cell. Copper was sputtered at a rate of 2.2 W / cm < 2 > for 5 minutes using a DC sputter.
In order to produce a mask, a mask was printed on a transparent film using a commercial laser printer. The printed mask is shown in Fig.
The copper-deposited substrate was spin-coated with photoresist at 1500 rpm for 45 seconds. At this time, Daejun Semichem J8000 photoresist was used as a photoresist. A metal ion free developer was used to expose the photoresist coated copper deposition substrate to UV 365 nm for 30 seconds and remove the photoresist from the substrate. The photo-patterned substrate is shown in Fig. 3 (a).
Then, etching was performed by immersing in 1 mol of FeCl 3 to remove copper in the photoresist portion exposed to ultraviolet rays. A substrate on which copper of a portion exposed to ultraviolet rays is selectively etched is shown in Fig. 3 (b).
The film was then washed with water and dried using N 2 . The photoresist remaining on the substrate was washed with acetone and immersed in silver plating solution for 1 second using silver cyanide to electroless plating. The substrate plated with silver cyanide is shown in Fig. 3 (c). The plated substrate was washed with water and then dried in air.
In order to deposit ZnO tetrapod on the substrate, a microwave was generated in the Zn powder to evaporate the Zn powder. The evaporated Zn powder was oxidized in air and deposited on the substrate in the form of ZnO tetrapod.
FIG. 4 is an image taken by a 3D microscope of a substrate on which an electrode manufactured according to an embodiment of the present invention is formed, and FIG. 5 is an FESEM image of a glass substrate on which an Ag / Cu film is formed according to an embodiment of the present invention.
As shown in the figure, the ultraviolet photoconductive cell of the present invention is very sensitive to ultraviolet rays, and the Ag-electroless-plated substrate has a uniform metal wall without defects and a height of about 1.3 탆.
As shown in Fig. 5, copper having a thickness of 1.24 mu m and a silver-separated film having a thickness of 0.38 mu m can be seen. It can be seen that a uniform Ag / Cu film was deposited on the substrate.
6 is an X-ray diffraction diagram of an ultraviolet photoconductive cell using a zinc oxide nanostructure manufactured according to an embodiment of the present invention.
As shown in the figure, it can be seen that ZnO tetrapod is well formed and exhibits strong XDR reflection at angles of 36.253, 31.770, and 56.603 2-theta, respectively, and has a hexagonal Wurtzite crystal structure appear.
FIG. 7 is a view illustrating an operation principle of an ultraviolet photoconductive cell using a zinc oxide nanostructure fabricated according to an embodiment of the present invention. FIG. 8 is a graph illustrating the operation principle of the zinc oxide nanostructure fabricated according to an embodiment of the present invention And shows the voltage characteristics of the ultraviolet photoconductive cell.
As shown in the figure, when the ultraviolet sensor of the present invention emits a wavelength of 365 nm at 0.02 μW /
9 is a graph showing optical characteristics of an ultraviolet photoconductive cell using a zinc oxide nanostructure manufactured according to an embodiment of the present invention.
As shown in the figure, it can be seen that the maximum value (? Max ) of the wavelength of the photoconductive cell is at 360 nm corresponding to UVA having photon energy in the range of 315 to 395 nm.
10 is a graph showing resistance characteristics of ultraviolet photoconductive cells using zinc oxide nanostructures prepared according to an embodiment of the present invention.
As shown in the figure, the resistance of the ultraviolet photoconductive cell is drastically lowered from 70 MΩ to 1.4 MΩ or less. That is, it can be seen that the ultraviolet photoconductive cell of the present invention has excellent light responsiveness.
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined by the following claims.
Claims (6)
Photo-patterning the substrate with copper deposited thereon;
Etching the photo-patterned substrate;
Silvering the patterned substrate after etching;
Depositing a zinc oxide nanostructure on the silver-plated substrate by heating the zinc powder in microwave; And
And sealing the substrate on which the zinc oxide nanostructure has been deposited.
Wherein the photo patterning comprises:
Printing a photomask on the transparent film; And
And photopatterning the substrate with the transparent film printed with the photomask.
The above-
Polyimide, polyester, or polyethylene teraphthalate. ≪ RTI ID = 0.0 > 21. < / RTI >
The step of silvering the patterned substrate after etching comprises:
Washing and rinsing the corroded substrate with N2 gas;
Washing the dried substrate with acetone; And
And immersing the substrate washed with acetone in a silver plating solution.
The step of depositing the zinc oxide nanostructure by heating the zinc powder in the microwave on the silver-
Applying a zinc powder to a receiving portion to form a zinc powder layer; And
Evaporating and oxidizing the zinc powder by heating with a microwave to deposit on the silver plated substrate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200095123A (en) * | 2019-01-31 | 2020-08-10 | 인천대학교 산학협력단 | Piezophototronic Device and Manufacturing Method thereof |
| KR20220036624A (en) * | 2020-09-16 | 2022-03-23 | 연세대학교 산학협력단 | METHOD OF MANUFACTURING ZnO NANOWIRE WITH SEA URCHIN SHAPE |
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| KR20110011229A (en) * | 2009-07-28 | 2011-02-08 | 명지대학교 산학협력단 | Method for forming zno nanowires patterned selectively on substrate via wet etching |
| JP2014120529A (en) * | 2012-12-13 | 2014-06-30 | Denki Kagaku Kogyo Kk | Circuit board, led module and led package, and method of manufacturing circuit board |
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| KR20110011229A (en) * | 2009-07-28 | 2011-02-08 | 명지대학교 산학협력단 | Method for forming zno nanowires patterned selectively on substrate via wet etching |
| JP2014120529A (en) * | 2012-12-13 | 2014-06-30 | Denki Kagaku Kogyo Kk | Circuit board, led module and led package, and method of manufacturing circuit board |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20200095123A (en) * | 2019-01-31 | 2020-08-10 | 인천대학교 산학협력단 | Piezophototronic Device and Manufacturing Method thereof |
| KR102248433B1 (en) | 2019-01-31 | 2021-05-04 | 인천대학교 산학협력단 | Piezophototronic Device and Manufacturing Method thereof |
| KR20220036624A (en) * | 2020-09-16 | 2022-03-23 | 연세대학교 산학협력단 | METHOD OF MANUFACTURING ZnO NANOWIRE WITH SEA URCHIN SHAPE |
| KR102457886B1 (en) | 2020-09-16 | 2022-10-21 | 연세대학교 산학협력단 | METHOD OF MANUFACTURING ZnO NANOWIRE WITH SEA URCHIN SHAPE |
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