KR101635979B1 - Scrubber - Google Patents

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide a scrubber for removing a perfluorocompound (PFC) or a high concentration of volatile organic compound (VOC) at a high temperature and at the same time preventing the deposition of a powder. A scrubber according to an embodiment of the present invention includes a plasma generator for generating and discharging a plasma arc and a process gas containing a perfluorocompound and a powder toward a plasma arc discharged from the discharge side of the plasma generator or a high concentration of a volatile organic compound Wherein the reactor includes a combustion chamber wall extending to a discharge side of the plasma generator and introducing a process gas or a process gas to one side of the furnace wall, A process gas outer chamber disposed outside the process chamber and supplying a process gas or a process gas into the combustion chamber wall through the first gas supply port and a second gas disposed inside the wall of the combustion chamber corresponding to the process gas inner chamber, A process gas or a process gas is supplied to the plasma arc It includes a reaction zone.

Description

Scrubber {SCRUBBER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to perfluorocompounds (PFCs) or volatile organic compounds (VOCs) discharged together with a large amount of powder generated in a process of manufacturing a liquid crystal display (LCD) compound and the like.

In the process of manufacturing a liquid crystal display (LCD), a very large amount of powder is discharged as a by-product of the process. As in the case of a general semiconductor manufacturing process, a large amount of perfluoro compounds (PFC) is discharged together with the powder in the LCD manufacturing process. Therefore, it is required to remove the powder and the perfluorocompound (PFC) generated in the manufacturing process.

When the combustion method, which is a general removal method, is applied to an LCD manufacturing process, the powder is deposited on the inner surface of the scrubber due to excessive powder discharge. Deposition of the powder causes misfire, and misfire makes it impossible to operate the scrubber for a long time. Therefore, the operation of the scrubber should be stopped from time to time and the powder deposited inside should be removed.

SUMMARY OF THE INVENTION An object of the present invention is to provide a scrubber for removing a perfluorocompound (PFC) or a high concentration of volatile organic compound (VOC) at a high temperature and at the same time preventing the deposition of a powder.

Another object of the present invention is to provide a scrubber that removes perfluorocompounds while stably maintaining plasma arc and flame even when powder is introduced and discharges the powder to the wake of the reactor without being deposited on the inner surface of the combustion chamber wall of the reactor.

Another object of the present invention is to provide a scrubber for rapidly oxidizing harmful substances or odorous substances such as volatile organic compounds (VOC), which are high in concentration.

A scrubber according to an embodiment of the present invention includes a plasma generator for generating and discharging a plasma arc and a process gas containing a perfluorocompound and a powder toward a plasma arc discharged from the discharge side of the plasma generator or a high concentration of a volatile organic compound Wherein the reactor includes a combustion chamber wall extending to a discharge side of the plasma generator and introducing a process gas or a process gas to one side of the furnace wall, A process gas outer chamber disposed outside the process chamber and supplying a process gas or a process gas into the combustion chamber wall through the first gas supply port and a second gas disposed inside the wall of the combustion chamber corresponding to the process gas outer chamber, A process gas or a process gas is supplied to the plasma arc It includes a reaction zone.

The plasma generator may include an electrode inserted into the housing and connected to a power source and a neck connected to the housing and grounded to form a discharge gap between the electrode and a narrow passage for discharging the plasma arc .

The first gas supply port may be formed in the combustion chamber wall, and the inflow direction of the first gas supply port may be set to a first angle with respect to the tangential direction of the combustion chamber wall.

The plurality of first gas supply ports may be disposed at regular intervals along the circumference of the combustion chamber wall.

The second gas supply port is formed in the reaction zone, and the reaction zone is set to a first diameter on an adjacent side of the plasma generator, and is set to a second diameter larger than the first diameter on the opposite side of the plasma generator, It is possible to cope with the inner diameter of the wall.

The plurality of second gas supply ports may be disposed at regular intervals along the circumference of the reaction chamber.

The second gas supply port may include a flap partially bent and bent in the reaction chamber to set the opening amount of the second gas supply port and the opening direction.

The flap may be bent at a twenty-first angle relative to the circumferential tangential direction of the reaction zone.

And the inflow direction of the second gas supply port may be set at a twenty-second angle in a plane that is set to the second diameter of the reaction zone.

The combustion chamber wall may form a final discharge port that narrows on the opposite side of the reaction zone.

A scrubber according to an embodiment of the present invention includes a plasma generator for generating and discharging a plasma arc and a process gas connected to a neck of the plasma generator and including a perfluorocompound and a powder toward a plasma arc discharged from the plasma generator, And a reactor for supplying a treatment gas containing a high concentration of volatile organic compounds (VOC) to form a flame.

The reactor may further include a catalyst provided inside the flame to oxidize the catalytically oxidizable material to the process gas or the process gas.

As described above, according to one embodiment of the present invention, a process gas or a processing gas is supplied to a plasma arc discharged from a plasma generator to a reactor by connecting a reactor to a plasma generator, thereby forming a flame. It is possible to remove the high concentration of the volatile organic compound contained in the perfluorocompound (PFC) contained in the process gas or the process gas at a high temperature and at the same time prevent the deposition of the powder.

As described above, according to one embodiment of the present invention, since the plasma arc generating unit is separated from the process gas (or process gas) process, when the process gas contains powder and is introduced or contained in the process gas into the high concentration volatile organic compound It is possible to remove the overburden compound or the high concentration of volatile organic compounds while stably maintaining the plasma arc and the flame in the reactor and to discharge the powder to the wake without depositing the inner surface of the combustion chamber wall of the reactor.

1 is a cross-sectional view of a scrubber according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line II-II in FIG.
3 is a perspective view of the reaction zone applied to Fig.
4 is a state diagram showing a state in which a plasma arc is generated.
5 is a state diagram showing a state in which a flame is formed.
6 is a cross-sectional view of a scrubber according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

FIG. 1 is a cross-sectional view of a scrubber according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along a line II-II in FIG. Referring to FIGS. 1 and 2, a scrubber according to an exemplary embodiment of the present invention includes a large amount of powder generated in a liquid crystal display device and a semiconductor manufacturing process to remove a perfluorocompound discharged into a process gas, or to remove a high concentration of volatile organic compounds (VOC) And a plasma generator (1) and a reactor (2) for oxidizing and removing volatile organic compounds from the processing gas.

Hereinafter, for the sake of convenience, the treatment of a process gas containing a perfluorocompound is mainly described, and the treatment of the volatile organic compounds contained in the process gas is explained at a minimum.

The plasma generator 1 and the reactor 2 are formed so as to prevent deposition of a process gas or a powder contained in the process gas while removing a perfluorocompound or a volatile organic compound at a high temperature and stably maintain the plasma arc and the flame.

The plasma generator 1 is configured to supply a discharge gas to generate a plasma arc. The plasma generator 1 includes a housing 11, an electrode 12 to be inserted into the housing 11, and a neck 13 to be grounded.

For example, the electrode 12 forms a discharge gap G between the inner wall of the neck 13 and its outer surface and is connected to a power source HV. The neck 13 is electrically grounded. The housing 11 is connected to the neck 13 and has a discharge gas supply port 111 on one side to supply the discharge gas to the discharge gap G. [

As the neck 13 is connected to the housing 11, the electrode 12 is disposed within the housing 11 and the neck 13. The neck 13 is connected to the reactor 2 on the other side and forms a passage narrower than the inner diameter of the housing 11 to discharge the plasma arc generated in the discharge gap G to the reactor 2.

That is, the neck 13 connects the plasma generator 1 including the housing 11 and the electrode 12 to the reactor 2. The neck 13 forms a narrower path than the inner diameter of the housing 11 and is electrically grounded so that it can effectively discharge the plasma arc from the plasma generator 1 to the reactor 2.

Since the neck 13 forms a narrow and long passage as compared with the housing 11, the process gas or the processing gas supplied to the reactor 2 is prevented from flowing back to the plasma generator 1 from the reactor 2, So that the arc can be discharged into the reactor 2 under stable high-temperature reaction conditions while filling the internal space of the neck 13. It is possible to prevent the volatile organic compound contained in the process gas or the volatile organic compound contained in the process gas from flowing into the plasma generator 1 and directly contacting the discharge gap G set between the electrode 12 and the neck 13 have. That is, even when the discharge gas contains a large amount of the powder and the volatile organic compound, the plasma arc can maintain a stable state.

On the other hand, the electrode 12 is provided with the eleventh and twelfth cooling water passages 121 and 122. The cooling water of low temperature is supplied to the eleventh cooling water passage 121 to absorb the heat of the electrode 12 to cool the electrode 12, and becomes high temperature. The high-temperature cooling water is discharged to the twelfth cooling water passage 122.

The throat 13 is provided with the twenty-first and twenty-second cooling water passages 131 and 132. The cooling water of low temperature is supplied to the 21st cooling water passage 131 to absorb the heat of the neck 13 to cool the neck 13, and the temperature becomes high. The high-temperature cooling water is discharged to the twenty-second cooling water passage (132).

The reactor 2 is configured to supply a process gas containing a perfluorocompound and a powder or a process gas containing a high-concentration flammable organic compound to the plasma arc discharged from the discharge side of the plasma generator 1 so as to form a flame . The process gas or the process gas is supplied while rotating and flowing toward the plasma arc at a side of the discharge direction of the plasma arc to be discharged.

Since the reactor 2 is connected to the neck 13 of the plasma generator 1, the perfluorocompound contained in the process gas or the volatile organic compound contained in the process gas can be removed from the reactor 2 without interfering with the generation of the plasma arc can do.

For example, the reactor 2 includes a combustion chamber wall 21, a process gas outer chamber 22, and a reaction zone 23. The combustion chamber wall 21 is connected to the discharge side of the plasma generator 1, that is, to the neck 13, and flows the process gas or the process gas into one side.

The process gas outside chamber 22 is disposed outside the combustion chamber wall 21 and communicates with the inside of the combustion chamber wall 21 through a first gas supply port 211 provided in the combustion chamber wall 21 .

The process gas outside chamber 22 is connected to a process gas supply port 221 for supplying a process gas or a process gas. That is, the process gas or process gas supplied to the process gas supply port 221 is filled in the process gas outside chamber 22 and is supplied to the space between the combustion chamber wall 21 and the reaction chamber 23 through the first gas supply port 211 (S), and then supplied to the inside of the reaction chamber 23 through the second gas supply port 231. [

The inflow direction of the first gas supply port 211 is set to the first angle? 1 with respect to the tangential direction of the combustion chamber wall 21. A plurality of first gas supply ports 211 are arranged at regular intervals along the circumference of the combustion chamber wall 21. [

The process gas supplied to the process gas outer chamber 22 through the process gas supply port 221 flows through the first gas supply port 211 to the space S while rotating along the inner peripheral surface of the combustion chamber wall 21 Can be supplied.

The reaction chamber 23 is disposed inside the combustion chamber wall 21 in correspondence with the process gas outer chamber 22 and is connected to the reaction chamber 23 through a second gas supply port 231, (23). At this time, the process gas or the process gas is supplied into the reaction chamber 23 in the space S while rotating through the second gas supply port 231. The supplied process gas or process gas forms a flame together with the plasma arc discharged from the plasma generator (1).

3 is a perspective view of the reaction zone applied to Fig. 1 to 3, the reaction zone 23 is set to the first diameter D1 on the contiguous side of the plasma generator 1 and set to the second diameter D2 on the opposite side of the plasma generator 1, Gt; a < / RTI >

The second diameter D2 is larger than the first diameter D1 and corresponds to the inner diameter of the combustion chamber wall 21. [ The reaction zone 23 is fixedly connected to the plasma generator 1 at a portion extending from the first diameter D1 side to the passage P of the neck 13 and at the second diameter D2 side is connected to the combustion chamber wall 21 As shown in Fig.

The second gas supply port 231 is partly punched out of the reaction chamber 23 and bent inside the reaction chamber 23 to form a flap 232 ).

The flap 232 forms a second gas supply port 231 on one side and is connected to the reaction chamber 23 on the other side. The flap 232 is set at the twenty-first angle? 21 with respect to the circumferential tangential direction of the reaction table 23 (see Fig. 3).

The process gas or process gas supplied to the inside of the reaction vessel 23 through the second gas supply port 231 is guided by the flap 232 at the twenty first angle? The reaction vessel 23 can be supplied while rotating along the inner circumferential surface of the reaction vessel 23.

The powder can be collected under the reactor 2 in the process of stalling the process gas or the processing gas to be distributed to the relatively low temperature state in the space S in front of the second gas supply port 231. [ A large flow rate of process gas or process gas may cool the flap 232 as it continues to flow.

The inflow direction of the second gas supply port 231 is set to a twenty-second angle? 22 on a plane set by the second diameter D2 of the reaction chamber 23 (see Fig. 1). The process gas or the process gas supplied into the reaction vessel 23 through the second gas supply port 231 flows through the second gas supply port 231 toward the center of the reaction vessel 23 at a twenty- amp; thetas; 22). The process gas or the process gas may be supplied in a direction away from the neck 13 while facing the plasma arc.

The plurality of second gas supply ports 231 may be disposed at equal intervals along the circumference of the reaction chamber 23. The process gas or the process gas supplied from the space S to the second gas supply port 231 can be uniformly supplied over the entire circumferential direction of the reaction vessel 23. [

Since the first gas supply port 211 is set to the first angle? 1 and the second gas supply ports 211 and 231 are set to the 21st and 22nd angles? 21 and? 22, The gas is introduced and processed while generating rotational flow inside the reaction vessel 23. Therefore, the temperature and the concentration of the process gas or the treatment gas can be made uniform within the reaction chamber 23 and the combustion chamber wall 21. [

Also, as the process gas or the processing gas rotates into the reaction vessel 23, the plasma arc discharged to the neck 13 rotates. The temperature gradient in the radial direction within the reaction chamber 23 and the combustion chamber wall 21 is reduced and the adhesion of the powder contained in the process gas to the reaction chamber 23 and the inner surface of the combustion chamber wall 21 can be reduced .

The reaction zone 23 expands the plasma arc discharged through the neck 13 and forms a reaction atmosphere at a high temperature while forming a large space as much as possible. Thus, the process gas or the processing gas maintains a high temperature even in the space near the inner surface of the reaction table 23 and the wall surface of the combustion chamber wall 21 adjacent to the reaction table 23. And the powder contained in the process gas is not deposited on the wall due to the rapid temperature gradient in the reaction chamber 23 and the combustion chamber wall 21. [

The combustion chamber wall 21 accommodates the reaction table 23 on the side adjacent to the neck 13 and extends in the plasma arc discharge direction to expand the flame formed inside the reaction table 23 to heat the process gas or the processing gas at a high temperature Lt; / RTI >

The combustion chamber wall 21 forms a final discharge port 212 that narrows on the opposite side of the reaction vessel 23. Therefore, the excessive compound contained in the process gas inside the combustion chamber wall 21 can be sufficiently burned.

4, in the scrubber of the embodiment, the discharge gas is supplied to the discharge gas supply port 111 of the plasma generator 1 while the discharge gas is supplied to the electrode 12, The plasma arc PA is generated at the discharge gap G and is discharged to the neck 13. As a result,

5 is a state diagram showing a state in which a flame is formed. 5, when a process gas containing a perfluorocompound and a powder or a process gas containing a high concentration of a volatile organic compound is supplied to the process gas supply port 221, the process gas or the process gas is introduced into the combustion chamber wall 21 And is supplied to the space S while rotating through the first gas supply port 211.

The process gas or process gas supplied to the space S while being rotated flows through the second gas supply port 231 of the reaction chamber 23 and is supplied into the reaction chamber 23 while rotating. The process gas or process gas forms a flame (F) while causing a rotational flow to be supplied to the plasma arc (PA) discharged to the neck (13).

Accordingly, the high concentration of the volatile organic compound contained in the perfluorocompound or the treated gas contained in the process gas is burned off in the reaction zone 23 and the combustion chamber wall 21 at a high temperature, and the processed process gas or the treated gas is introduced into the combustion chamber wall Is discharged to the final discharge port (212) of the discharge port (21).

The powder contained in the process gas falls into the inner space of the combustion chamber wall 21. At this time, the powder is not deposited on the plasma generator 1 and the neck 13. The harmful or odorous substances such as volatile organic compounds of high concentration contained in the treatment gas are quickly oxidized and removed in the reaction chamber 23 and the combustion chamber wall 21. [

Hereinafter, another embodiment of the present invention will be described. For the sake of convenience, description of the same configuration as that of the above embodiment will be omitted and different configurations will be described below.

6 is a cross-sectional view of a scrubber according to another embodiment of the present invention. Referring to FIG. 6, the reactor 62 includes a catalyst 621 in which a flame is formed. The catalyst 621 may be installed inside the combustion chamber wall 21 and heated by a flame.

The catalyst 621 can promote oxidation of the process gas or process gas when the process gas or the process gas includes a catalytically oxidizable substance. Therefore, the high concentration of the volatile organic compound contained in the perfluorocompound or the treated gas contained in the process gas is burned and removed in the reaction zone 23 and the combustion chamber wall 21 at a high temperature, and then the catalyst 621 in the combustion chamber wall 21 ).

That is, the embodiment of FIG. 6 provides minimal temperature conditions for the start-up and catalysis of the catalyst 621, thereby allowing the catalytic reaction to oxidize and remove the process gas or process gas. Therefore, the power consumption consumed for generating the plasma in the plasma generator 1 can be reduced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, And it goes without saying that the invention belongs to the scope of the invention.

1: Plasma generator 2: Reactor
11: housing 12: electrode
13: neck 21: combustion chamber wall
22: process gas outside chamber 23: reaction zone
111: discharge gas supply port 121, 122: 11th, 12th cooling water passage
131, 132: 21st, 22nd cooling water passage 211: first gas supply port
212: final discharge port 221: process gas supply port
231: second gas supply port 232: flap
D1, D2: first and second diameters G: discharge gap
HV: Power supply P: Passage
S: space? 1,? 21,? 22: first, twenty first, twenty second angles

Claims (12)

A plasma generator for generating and discharging a plasma arc; And
And a reactor for supplying a process gas containing a perfluorocompound and powder or a process gas containing a high concentration of volatile organic compounds (VOC) toward a plasma arc discharged from the discharge side of the plasma generator to form a flame,
The reactor comprises:
A combustion chamber wall which is connected to the discharge side of the plasma generator and flows the process gas or the process gas into one side,
A process gas outer chamber disposed outside the combustion chamber wall for supplying a process gas or a process gas into the combustion chamber wall through a first gas supply port,
And a reaction zone disposed inside the combustion chamber wall in correspondence with the process gas outside chamber and supplying a process gas or a process gas to the plasma arc in the second gas supply port. The method according to claim 1,
The plasma generator includes:
An electrode inserted into the housing and connected to a power source, and
And a neck connected to the housing and grounded to form a discharge gap between the electrode and the electrode and formed with a narrow passage to discharge a plasma arc. The method according to claim 1,
Wherein the first gas supply port is formed in the combustion chamber wall,
Wherein the first gas supply port
And is set at a first angle with respect to a tangential direction of the combustion chamber wall. The method of claim 3,
Wherein the first gas supply port comprises:
And disposed at equal intervals along the circumference of the combustion chamber wall. The method according to claim 1,
The second gas supply port is formed in the reaction zone,
In the reaction zone,
A first diameter at an adjacent side of the plasma generator,
And a second diameter larger than the first diameter on the opposite side of the plasma generator and corresponding to an inner diameter of the combustion chamber wall. 6. The method of claim 5,
Wherein the second gas supply port comprises:
And disposed at equal intervals along the circumference of the reaction vessel. The method according to claim 6,
Wherein the second gas supply port comprises:
And a flap partially bent and bent in the reaction zone to set an opening amount of the second gas supply port and an opening direction. 8. The method of claim 7,
The flap
Wherein the reaction zone is bent at a twenty-first angle relative to the circumferential tangential direction of the reaction zone. 8. The method of claim 7,
The inflow direction of the second gas supply port
The second diameter of the reaction zone being set at a twenty-second angle. The method according to claim 1,
The combustion chamber wall
Thereby forming a final outlet that narrows on the opposite side of the reaction zone. delete The method according to claim 1,
The reactor
And a catalyst disposed inside the flame to oxidize the catalytically oxidizable substance to the process gas or the treatment gas.

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