KR101627203B1 - apparatus and method for measuring atmosphere temperature of sapphire single crystal growing chamber - Google Patents

Abstract

The present invention relates to an apparatus and a method for measuring the atmospheric temperature of a sapphire single crystal growth chamber which can indirectly and accurately estimate the temperature of a molten metal in a sapphire single crystal growth chamber, A chamber lid assembled to the opening of the body to seal the chamber body; At least one atmosphere temperature sensor installed in the chamber lid so as to indirectly measure the temperature of the sapphire molten metal accommodated in the chamber body and measuring the atmospheric temperature of the internal gas of the chamber body; And a temperature calculation control part for receiving the atmospheric temperature measurement value from the atmospheric temperature sensor and calculating a molten metal temperature estimation value of the sapphire molten metal.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for measuring an atmospheric temperature of a sapphire single crystal growth chamber,

The present invention relates to an apparatus and method for measuring the atmospheric temperature of a sapphire single crystal growth chamber, and more particularly, to an apparatus and method for measuring an atmospheric temperature of a sapphire single crystal growth chamber which can indirectly and accurately estimate a temperature of a melt in a sapphire single crystal growth chamber .

Generally, in order to grow a sapphire single crystal, a seed is hung on a seed shaft and brought into contact with the surface of the molten metal in the chamber, and then slowly pulled up to form a single crystal sapphire ingot on the seed.

This seed growth work is based on experience and sense of the past, only manually trained experts who depend on visual confirmation as a viewport for a long period of time and can not guarantee uniformity and repeatability of work.

On the other hand, the temperature of the molten metal in the chamber is directly contacted with the high temperature of about 1600 degrees or more, and there is no sensor that can withstand sufficiently while continuously measuring the temperature.

Therefore, in the past, the operator relied only on experience and sensation while confirming the exact temperature of the molten metal required for single crystal growth with the naked eye such as a viewport.

However, the temperature estimation method which depends on the operator's experience and senses is very inaccurate. Because it has to rely on a high degree of proficiency and sense, productivity is greatly lowered. If there is no skilled worker, There is a problem in that the uniformity of the film is greatly reduced.

The present invention solves a variety of problems including the above problems, and it is an object of the present invention to indirectly measure the atmospheric temperature of a sapphire single crystal growth chamber and to accurately estimate the temperature of the molten metal by formally estimating the atmospheric temperature of the sapphire single crystal growth chamber, It is an object of the present invention to provide an apparatus and method for measuring the atmospheric temperature of a sapphire single crystal growth chamber which can maximize productivity by greatly reducing work time and cost and which can repeatedly produce high quality products with uniform quality. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided an apparatus for measuring an ambient temperature of a sapphire single crystal growth chamber, comprising: a chamber lid assembled to an opening of a chamber body capable of accommodating a sapphire molten metal to seal the chamber body; At least one atmosphere temperature sensor installed in the chamber lid so as to indirectly measure the temperature of the sapphire molten metal accommodated in the chamber body and measuring the atmospheric temperature of the internal gas of the chamber body; And a temperature calculation control part for receiving the atmospheric temperature measurement value from the atmospheric temperature sensor and calculating a molten metal temperature estimation value of the sapphire molten metal.

According to an aspect of the present invention, the ambient temperature sensor may include a thermocouple installed through the chamber lid.

According to an aspect of the present invention, the ambient temperature sensor further includes: a first housing having a tip through which the chamber lid penetrates, and a flange formed at a rear end thereof; A second housing assembled with a flange portion of the first housing by a fastener and having a sealing member provided between the first housing and the flange portion; And a thermocouple rod installed through the first housing and the second housing.

According to an aspect of the present invention, a rod shaft port through which a rod shaft with a seed is passed and a viewport are provided at a central portion of the chamber lid, A total of four may be installed in the front, rear, left, and right directions, respectively.

Further, according to the idea of the present invention, the temperature calculation control section determines that the initial atmospheric temperature and the pre-heating sapphire temperature are the same, and assumes that both the atmospheric temperature and the sapphire temperature increase proportionally during the heating section while the sapphire is heated A temperature difference value calculating circuit section for calculating an actual temperature difference value between the atmospheric temperature and the melting temperature when the melting temperature of the already known sapphire molten metal is reached; A proportional value calculating circuit for calculating a proportional value of the measured atmospheric temperature with respect to the melting temperature; And adding the value obtained by multiplying the temperature difference value and the proportional value to the measured atmospheric temperature at the degassing temperature interval, the convection stabilization temperature interval, the neck growth interval and the body growth interval, And a temperature estimation value calculation circuit section for calculating a temperature estimation value.

According to an aspect of the present invention, when the measured value of the specific ambient temperature sensor among the plurality of ambient temperature sensors exceeds the setting average of the measured average values of the remaining ambient temperature sensors, And a failure sensor detection circuit unit for outputting a detection signal indicative of abnormality of the specific ambient temperature sensor, excluding the calculation process.

According to an aspect of the present invention, the temperature calculation control unit further includes a deviation correction circuit unit that corrects the melt temperature estimation value in consideration of a deviation of the atmospheric temperature measurement value measured by the plurality of the ambient temperature sensors with respect to the temperature can do.

A method of measuring an ambient temperature of a sapphire single crystal growth chamber according to an embodiment of the present invention includes a step of forming a chamber lid which is assembled with an opening of a chamber body to seal the chamber body, A method for measuring an atmospheric temperature of a single crystal growth chamber using at least one atmosphere temperature sensor for measuring an atmospheric temperature, comprising the steps of: calculating an actual temperature difference value between an atmospheric temperature and a melting temperature when a melting temperature of the sapphire molten metal is reached Calculating a proportional value of the atmospheric temperature measured relative to the melting temperature; And adding the measured temperature difference to the measured atmospheric temperature multiplied by the proportional value to calculate a final molten metal temperature estimate.

According to some embodiments of the present invention as described above, it is possible to maximize the work efficiency of a worker by improving the precision of temperature measurement, to know the exact temperature of the melt easily even for a beginner, The productivity can be improved, and the uniformity of product quality and the repetitive productivity can be improved. Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view illustrating an apparatus for measuring an ambient temperature of a sapphire single crystal growth chamber according to some embodiments of the present invention.
2 is a cross-sectional view of Fig.
3 is an enlarged sectional view showing the ambient temperature sensor of Fig.
Fig. 4 is a block diagram showing an example of the temperature calculation control unit of Fig. 3;
5 is a flow chart illustrating a method for measuring the ambient temperature of a sapphire single crystal growth chamber in accordance with some embodiments of the present invention.
6 is a temperature estimation graph of a molten metal showing a method of measuring the atmospheric temperature of the sapphire single crystal growth chamber of FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, in the figures the elements are turned over so that the elements depicted as being on the top surface of the other elements are oriented on the bottom surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a perspective view showing an apparatus 100 for measuring the ambient temperature of a sapphire single crystal growth chamber according to some embodiments of the present invention, Fig. 2 is a sectional view of Fig. 1, Fig. 3 is a cross- Fig.

1 to 3, an apparatus 100 for measuring an ambient temperature of a sapphire single crystal growth chamber according to some embodiments of the present invention includes a chamber body 10, a chamber lid 20, An ambient temperature sensor 30 and a temperature calculation control unit 40. [

As shown in FIGS. 1 and 2, the chamber body 10 is a chamber body portion in which an opening 10a is formed in an upper portion and can accommodate the sapphire melt 1 therein.

A heater may be installed inside the chamber body 10, and a heater may be used to heat the sapphire melt to a temperature higher than a melting point of the sapphire, and a receiving space for accommodating the molten sapphire melt 1 may be formed have.

1 and 2, the chamber lid 20 is assembled to an opening 10a of the chamber body 10 to seal the chamber body 10, A rod shaft port 3 and a viewport 4 through which a seed shaft 2 with a seed S is passed may be installed at the center of the lid 20, A cooling gas port 5 for introducing cooling gas into the body 10 and a viewport shutter 6 for selectively blocking the viewport 4 may be additionally provided.

1 and 3, the atmospheric temperature sensor 30 detects the temperature of the chamber lid 20 so as to indirectly measure the temperature of the sapphire molten bath 1 accommodated in the chamber body 10, And a thermocouple installed in the chamber body 10 through the chamber lid 20 to measure the atmospheric temperature of the internal gas G of the chamber body 10.

1, the ambient temperature sensor 30 includes a front atmosphere temperature sensor 30-1 installed in front of the center of the chamber lid 20, A total of four may be provided including the ambient temperature sensor 30-2, the left ambient temperature sensor 30-3 installed on the left side, and the right ambient temperature sensor 30-4 installed on the right side.

Therefore, even if the high-temperature gas generated in the chamber body 10 flows through the chamber lid 20 in the forward, backward, left or right direction due to convection, accurate temperature measurement of the gas is possible.

3, the ambient temperature sensor 30 includes a first housing 31 having a tip end penetrating the chamber lid 20 and a flange F formed at the rear end thereof, A second housing 32 assembled with a fastener 33 on a flange portion F of the first housing 31 and provided with a sealing member 34 between the first housing 31 and the first housing 31, And a thermocouple rod 35 installed through the first housing 31 and the second housing 32.

Therefore, when a failure occurs in any one of the ambient temperature sensors 30 due to such a structure, it is possible to easily separate the first housing 31 and the second housing 32 to replace or repair parts .

2 and 3, the temperature calculation control unit 40 is a control unit that receives the atmospheric temperature measurement value from the atmospheric temperature sensor 30 and calculates the estimated melt temperature of the sapphire melt 1, to be.

FIG. 4 is a block diagram showing an example of the temperature calculation control unit 40 of FIG. 3, FIG. 5 is a flowchart showing a method of measuring an ambient temperature of a sapphire single crystal growth chamber according to some embodiments of the present invention, 5 is a temperature estimation graph of a molten metal showing a method of measuring the atmospheric temperature of the sapphire single crystal growth chamber.

4 and 6, the temperature calculation control unit 40 includes a temperature difference value calculation circuit unit 41, a proportional value calculation circuit unit 42, a temperature estimation value calculation circuit unit 43, A detection circuit unit 44, a deviation correction circuit unit 45, and the like.

4 and 6, the temperature difference value calculation circuit section 41 determines that the initial atmospheric temperature and the pre-heating sapphire temperature are the same, and while the sapphire is being heated, The actual temperature difference value d1 between the atmospheric temperature T1 and the melting temperature when the melting temperature MT of the known sapphire molten metal is reached is calculated on the assumption that the atmospheric temperature and the sapphire temperature both increase proportionally It can be a circuit section for calculating.

The proportional value calculating circuit unit 42 may be a circuit unit for calculating a proportional value (T1 / MT) of the measured atmospheric temperature with respect to the melting temperature.

The temperature estimation value calculating circuit 43 calculates the temperature estimated value calculating circuit 43 based on the temperatures in the degassing temperature section S2 and the convection stabilization temperature section S3 or in the neck growth section S4 and the body growth section S5 (T3 = T2 + d2, wherein d2 = T1 (T2)) is added to the measured atmospheric temperature (T2) by adding the estimated difference value d2 obtained by multiplying the temperature difference value d1 by the proportional value T1 / / MT).

5, the temperature of the single crystal growth chamber is measured using the temperature difference value calculating circuit portion 41, the proportional value calculating circuit portion 42 and the temperature estimated value calculating circuit portion 43 described above (A) Assuming that the initial atmospheric temperature and the pre-heating sapphire temperature are the same, and during the heating of the sapphire, the temperature of the atmosphere and the temperature of the sapphire are both proportionally increased in the heating section S1, Calculating an actual temperature difference value d1 between the atmospheric temperature T1 and the melting temperature when the melting temperature MT of the sapphire molten metal is reached; and (b) calculating a proportional value T1 / MT) of the neck growth period (S4) and the body growth period (S5), and (c) thereafter the degassing temperature interval S2, the convection stabilization temperature interval S3, , The measured ambient temperature (T2) Calculating a final molten metal temperature estimate T3 = T2 + d2, wherein d2 = T1 / MT, by adding the estimated difference value d2 obtained by multiplying the temperature difference value d1 by the proportional value T1 / Can be performed.

Therefore, by performing these steps, it is possible to obtain accurate temperature data without depending on the experience or sensation of the operator, thereby increasing the productivity of the operator and producing a good quality product.

4, the failure sensor detection circuit unit 44 detects the temperature of the specific atmosphere temperature among the plurality of the ambient temperature sensors 30-1, 30-2, 30-3, and 30-4, When the measured value of the sensor exceeds the set value range of the remaining ambient temperature sensors, the measured value of the specific ambient temperature sensor is not calculated and is output to the specific ambient temperature sensor.

Accordingly, the operator can easily identify and repair and replace the failed ambient temperature sensor by using the failure sensor detection circuit unit 44. [

4, the deviation correction circuit portion 45 is a circuit for correcting the deviation of the ambient temperature measured by the plurality of ambient temperature sensors 30-1, 30-2, 30-3, Is a circuit for correcting the melt temperature estimate by taking into consideration the deviation of the temperature measurement value with temperature.

Therefore, when a large amount of convection of gas occurs at a specific temperature using the deviation correction circuit unit 45, the ambient temperature sensors 30-1, 30-2, 30-3, 30- 4) can be estimated by referring to the tendency of the deviation of the molten metal.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

S: Seed
1: melt
2: Seed shaft
3: Seed shaft port
4: Viewport
5: Cooling gas port
6: Viewport Shutter
10: chamber body
10a: opening
20: chamber lid
G: Gas
30: Ambient temperature sensor
30-1: Front air temperature sensor
30-2: rear atmosphere temperature sensor
30-3: Left atmosphere temperature sensor
30-4: Right atmosphere temperature sensor
31: first housing
32: second housing
33: Fixture
34: Sealing member
35: Thermocouple load
40: Temperature calculation control unit
41: temperature difference value calculating circuit
42: Proportional value calculating circuit
43: Temperature estimation value calculating circuit section
44: Fault sensor detection circuit
45: Deviation correction circuit part
100: atmosphere temperature measuring device
F: flange portion
S1: heating section
S2: degassing temperature interval
S3: Convective stabilization temperature interval
S4: Neck growth section
S5: Body growth section
MT: Melting temperature
T1, T2: Atmosphere temperature
d1, d2: temperature difference value
T3: Estimated final melt temperature

Claims (8)

delete delete A chamber lid assembled to an opening of a chamber body capable of accommodating the molten glass of sapphire to seal the chamber body;
At least one atmosphere temperature sensor installed in the chamber lid so as to indirectly measure the temperature of the sapphire molten metal accommodated in the chamber body and measuring the atmospheric temperature of the internal gas of the chamber body; And
And a temperature calculation control unit for receiving an atmospheric temperature measurement value from the atmospheric temperature sensor and calculating a molten metal temperature estimation value of the sapphire molten metal,
Wherein the ambient temperature sensor comprises:
A first housing having a distal end penetrating the chamber lid and a flange formed at a rear end thereof;
A second housing assembled with a flange portion of the first housing by a fastener and having a sealing member disposed between the first housing and the flange portion; And
A thermocouple rod installed through the first housing and the second housing;
Wherein the atmospheric temperature of the sapphire monocrystal growth chamber is in the range of 10 to 100 nm. A chamber lid assembled to an opening of a chamber body capable of accommodating the molten glass of sapphire to seal the chamber body;
At least one atmosphere temperature sensor installed in the chamber lid so as to indirectly measure the temperature of the sapphire molten metal accommodated in the chamber body and measuring the atmospheric temperature of the internal gas of the chamber body; And
And a temperature calculation control unit for receiving an atmospheric temperature measurement value from the atmospheric temperature sensor and calculating a molten metal temperature estimation value of the sapphire molten metal,
A rod shaft port through which a rod having a seed is passed and a viewport are installed at a central portion of the chamber lid,
Wherein the atmospheric temperature sensor is provided with a total of four atmospheric temperature sensors, one at each of the front, rear, left, and right directions with respect to the center of the chamber lid. A chamber lid assembled to an opening of a chamber body capable of accommodating the molten glass of sapphire to seal the chamber body;
At least one atmosphere temperature sensor installed in the chamber lid so as to indirectly measure the temperature of the sapphire molten metal accommodated in the chamber body and measuring the atmospheric temperature of the internal gas of the chamber body; And
And a temperature calculation control unit for receiving an atmospheric temperature measurement value from the atmospheric temperature sensor and calculating a molten metal temperature estimation value of the sapphire molten metal,
Wherein the temperature calculation control unit comprises:
Assuming that the initial atmospheric temperature and the pre-heating sapphire temperature are the same, while the sapphire is being heated, it is assumed that both the atmospheric temperature and the sapphire temperature increase proportionally in the heating section, and when the melting temperature of the already known sapphire melt is reached A temperature difference value calculation circuit section for calculating an actual temperature difference value between the temperature and the melting temperature;
A proportional value calculating circuit for calculating a proportional value of the measured atmospheric temperature with respect to the melting temperature; And
When estimating the temperature in the degassing temperature range, the convection stabilization temperature range, the neck growth section, or the body growth section, the measured temperature difference is multiplied by the temperature difference value and the proportional value to obtain the final melt temperature estimate A temperature estimate calculation circuit for calculating the temperature;
Wherein the atmospheric temperature of the single crystal growth chamber is measured. A chamber lid assembled to an opening of a chamber body capable of accommodating the molten glass of sapphire to seal the chamber body;
At least one atmosphere temperature sensor installed in the chamber lid so as to indirectly measure the temperature of the sapphire molten metal accommodated in the chamber body and measuring the atmospheric temperature of the internal gas of the chamber body; And
And a temperature calculation control unit for receiving an atmospheric temperature measurement value from the atmospheric temperature sensor and calculating a molten metal temperature estimation value of the sapphire molten metal,
Wherein the temperature calculation control unit comprises:
When the measurement value of the specific ambient temperature sensor among the plurality of ambient temperature sensors exceeds the set value range of the average of the remaining ambient temperature sensors, the measured value of the specific ambient temperature sensor is excluded from the calculation process, A fault sensor detecting circuit unit for outputting the fault signal;
Wherein the atmospheric temperature measurement apparatus further comprises: A chamber lid assembled to an opening of a chamber body capable of accommodating the molten glass of sapphire to seal the chamber body;
At least one atmosphere temperature sensor installed in the chamber lid so as to indirectly measure the temperature of the sapphire molten metal accommodated in the chamber body and measuring the atmospheric temperature of the internal gas of the chamber body; And
And a temperature calculation control unit for receiving an atmospheric temperature measurement value from the atmospheric temperature sensor and calculating a molten metal temperature estimation value of the sapphire molten metal,
Wherein the temperature calculation control unit comprises:
A deviation correction circuit for correcting the melt temperature estimate by taking into account the deviation of the atmospheric temperature measurement value measured at the plurality of the ambient temperature sensors according to the temperature;
Wherein the atmospheric temperature measurement apparatus further comprises: A method of measuring the atmospheric temperature of the single crystal growth chamber by using at least one atmosphere temperature sensor for measuring the atmospheric temperature of the internal gas of the chamber body in a chamber lid which is assembled in an opening of the chamber body to seal the chamber body As a result,
Assuming that the initial atmospheric temperature and the pre-heating sapphire temperature are the same, while the sapphire is being heated, it is assumed that both the atmospheric temperature and the sapphire temperature increase proportionally in the heating section, and when the melting temperature of the already known sapphire melt is reached Calculating an actual temperature difference value between the temperature and the melting temperature;
Calculating a proportional value of the measured atmospheric temperature with respect to the melting temperature; And
When estimating the temperature in the degassing temperature zone, the convection stabilization temperature zone, the neck growth zone, or the body growth zone, the measured temperature difference is multiplied by the temperature difference value and the proportional value to calculate the final molten bath temperature estimate ;
Wherein the temperature of the atmospheric temperature of the sapphire single crystal growth chamber is in the range of from about 1 to about 10 seconds.

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