KR101606674B1 - Etching system and method of molding compound of led package - Google Patents
Etching system and method of molding compound of led packageInfo
- Publication number
- KR101606674B1 KR101606674B1 KR1020150115061A KR20150115061A KR101606674B1 KR 101606674 B1 KR101606674 B1 KR 101606674B1 KR 1020150115061 A KR1020150115061 A KR 1020150115061A KR 20150115061 A KR20150115061 A KR 20150115061A KR 101606674 B1 KR101606674 B1 KR 101606674B1
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- Prior art keywords
- unit
- laser
- led
- etching
- scanning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Led Device Packages (AREA)
Abstract
Description
BACKGROUND OF THE
Among various light emitting devices, an LED has a PN junction structure using a semiconductor, and when a forward voltage is applied to the PN junction, the energy of electrons is converted into light energy to emit light. LED was first developed by Nick Hororniak of the University of Illinois in 1962 and has been used today as a light source for lighting, a backlight unit of a liquid crystal display (LCD) And has been attracting attention as a light source to replace a fluorescent lamp or a bulb in the future.
BACKGROUND ART In general, an LED package includes an LED chip mounted on a lead frame or a printed circuit board (PCB), electrically connected to an electrode for applying an external voltage through a bonding wire, And then the entire structure is molded into a translucent encapsulant. Epoxy resin or silicone resin is mainly used as an encapsulating material.
1 is a cross-sectional view of a typical LED package. 1, an
At this time, it is difficult to make the amount of the light-transmitting resin included in the encapsulating
Accordingly, the inventor of the present invention has proposed a technique of etching a sealing material of an LED package with a laser, forming a specific pattern on the sealing material, and changing the color coordinate through the pattern. However, there are a number of barriers in implementing such techniques, including the problems of efficiency and yield, the problem of precision in accurately scanning the laser beam with a specific pattern on the encapsulant of the LED package, , The problem of secondary contamination caused by laser etching, and the like.
SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method and an apparatus for improving efficiency by supplying a tray type or lead frame type LED material having a plurality of LED packages arranged in a mattress arrangement to a laser beam scanning region of a laser etching unit, An encapsulant etching system of an LED package is provided which enables more precise laser etching by allowing position / alignment confirmation and height measurement to occur before or after the LED material enters the laser beam scan area of the laser etch unit will be.
Another object of the present invention is to improve efficiency by supplying a tray type or lead frame type LED material having a plurality of LED packages arranged in a mattress arrangement to a laser beam scanning region of a laser etching unit, Alignment / confirmation and height measurement are performed before or after entering the laser beam scan region of the etching unit so that more precise laser etching can be performed. Immediately after laser etching, And it is an object of the present invention to provide an encapsulant etching system of an LED package which can prevent contamination of an LED package which can be caused by laser etching.
According to one aspect of the present invention, there is provided a laser etching system for laser etching the encapsulants of LED packages, wherein the LED packages comprising the encapsulant carry LED material disposed in a mattress arrangement comprising rows and columns The etching system comprising: a conveyor unit for transferring the LED material past the laser etch location; A loading unit for loading the LED material onto the entrance side of the conveyor unit; An unloading unit for unloading the LED material at an exit side of the conveyor unit; A position / alignment confirmation unit for confirming the position or alignment of the LED material placed on the conveyor unit; A laser etching unit for laser-etching the encapsulants of the LED packages contained in the LED material with respect to the LED material whose position or alignment is confirmed by the position / alignment confirmation unit; And an integrated control unit for integrally controlling the position / alignment confirmation unit and the laser etching unit. The laser etching unit includes a laser generator for generating a laser beam, a laser beam scanning unit for xy scanning the laser beam, A focus lens unit for making the laser beam into a laser beam spot, and a main body made up of the laser generator, the laser beam scanning unit, and the focus lens unit are moved in three directions along the X axis, the Y axis, and the Z axis Gt; XYZ < / RTI >
According to one embodiment, the sealing material etching system further comprises a height measuring unit controlled by the integrated control unit, the height measuring unit measuring the height of the LED material that has reached the height measuring position on the conveyor unit, The control unit controls the Z-axis movement of the XYZ movement unit according to the height information measured by the height measurement unit, and the height measurement position is located between the entrance side of the conveyor unit and the laser etching position.
According to one embodiment, the sealing material etching system is controlled by the integrated control unit, and when the LED material reaches the optical characteristic measuring position on the conveyor unit after laser etching by the laser etching unit is completed, Further comprising an optical characteristic measurement unit for measuring the optical characteristics of the LED packages, wherein the optical characteristic measurement position is located between the laser etch position and the exit side of the conveyor unit.
According to one embodiment, the encapsulation material etch system is controlled by the integrated control unit, and when the LED material has reached the pattern inspection position on the conveyor unit after laser etching by the laser etching unit has been completed, And a pattern inspection unit for inspecting the laser etching pattern formed on the ashes with a vision camera, wherein the pattern inspection position is located between the laser etching position and the exit side of the conveyor unit.
According to one embodiment, the encapsulant etch system is controlled by the integrated control unit, wherein when the LED material has reached the clean position on the conveyor unit after laser etching by the laser etch unit has been completed, the CDA And a dry cleaning unit for cleaning the LED material by spraying clean dry air.
According to one embodiment, the dry scrubbing unit cleans the LED material by spraying CO 2 dry ice with the CDA.
According to one embodiment, the encapsulant etch system, when the LED material has finished laser etching by the laser etch unit and then reaches the inspection position on the conveyor unit, the pattern of the optical properties or encapsulants of the LED packages And a sorting unit for sorting the unloaded product by the unloading unit into a good product and a defective product according to the inspection result by the inspection means.
According to one embodiment, the focus lens section comprises a confocal f-& theta lens, the laser beam scanning section comprises a Galvano scanner, the position / alignment confirmation unit comprises machine vision, The measuring unit includes a laser distance sensor.
According to one embodiment, the laser beam scanning unit performs a laser scanning operation for a specific laser scanning area including a plurality of sealing materials.
According to one embodiment, the laser beam scanning unit divides the entire area of the LED material into a plurality of laser scanning areas having the same size with respect to the LED material, laser-scans each laser scanning area, and includes the laser scanning area The encapsulated encapsulants are collectively laser-etched, and when the laser scanning for one laser scanning area is completed, the laser scanning is performed to the next laser scanning area to perform laser scanning for the corresponding laser scanning area.
According to the present invention, it is possible to regenerate defective products due to deviation of the color coordinates based on the discharge amount of the conventional fluorescent epoxy resin and the amount of uneven fluorescent material, etc., through good artifacts by moving artificial color coordinates, thereby improving the production yield. Further, the final brightness of the LED can be improved by etching the encapsulant of the LED, and the shape of the upper surface of the encapsulant of the LED is controlled through the pitch of the concentric circles of the ring pattern and the output of the laser, And can increase the efficiency and functionality of the LED.
According to the present invention, efficiency can be improved by feeding a tray type or a lead frame type LED material, in which the LED packages are arranged in a mattress arrangement, to the laser beam scanning region of the laser etching unit, and the LED material is irradiated onto the laser Alignment / confirmation and height measurement are performed before or after entering the beam scan region to enable more precise laser etching and to confirm that the optical characteristics of the LED packages meet the desired target value immediately after laser etching And can prevent contamination of the LED package, which can be caused by laser etching.
1 is a cross-sectional view of a typical LED package.
2 (A) and 2 (B) show two examples of LED materials that are supplied and processed in a sealing material etching system of an LED package according to the present invention.
3 is a block diagram illustrating an encapsulating material etching system of an LED package according to an embodiment of the present invention.
4 is a configuration diagram illustrating an encapsulating material etching system of an LED package according to another embodiment of the present invention.
5 is a configuration diagram illustrating an encapsulating material etching system of an LED package according to another embodiment of the present invention.
6 is a view for explaining an example in which the laser etching unit according to the present invention is applied to a large area LED material in a region division manner.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings and the description thereof are intended to aid those of ordinary skill in the art in understanding the present invention. Accordingly, the drawings and description are not to be construed as limiting the scope of the invention.
2 (A) and 2 (B) show two examples of LED materials that are supplied and processed in a sealing material etching system of an LED package according to the present invention.
The encapsulant etching system of the present invention, which will be described below, receives the LED material M1 or M2 (collectively M) transferred in the form of FIG. 2A or FIG. Laser processing is performed on the
3 is a block diagram illustrating an encapsulating material etching system of an LED package according to an embodiment of the present invention.
Referring to FIG. 3, the sealing material etching system of the LED package according to the present embodiment includes the LED material M (see FIG. 3), which is sequentially passed through the position / alignment confirmation position, the height measurement position, the laser etching position, (Not shown). The
The sealing material etching system of the LED package further comprises a position /
The sealing material etching system of the LED package further comprises a
The
If it is confirmed that the LED material M is misaligned, the
The
The
The laser
In this embodiment, one laser scanning area by the laser
The amount of etching that is performed in etching the encapsulation material can be finely controlled by adjusting the power and the scanning pitch of the laser beam. As the etching amount of the sealing material is finely controlled, the color coordinates (CIE-XYZ) of the light of the LED package which finally emits light changes finely. Accordingly, even if it is determined that the LED package provided in the LED material M is defective due to deviation of the reference value of the color coordinate, it is possible to reproduce the product by good products. The change in the color coordinates of the LED due to the laser beam etching largely depends on the etching amount of the sealing material and the etching pattern.
The
On the other hand, the optical
The
The etch pattern for the encapsulant may be a dot pattern comprising a plurality of points or a lattice or screen pattern in which the lines cross each other in the lateral and longitudinal directions or the like, A circular, polygonal, or elliptical ring having a size can be formed to have the same center. When the ring pattern is etched by the laser, the pitch of the ring and the output of the laser can be adjusted to make the shape of the upper surface of the sealing material concave or convex.
For example, an etching pattern of an encapsulant is formed by etching a sealing material of an LED by a laser in a ring pattern patterned with a plurality of concentric circles, wherein the pitch of the concentric circles (meaning the width of each concentric circle) By controlling the output of the laser, the upper surface of the etching pattern of the sealing material may be patterned to have a concave shape according to the pitch or the output of the laser, patterned into a convex shape, or patterned into an aspherical shape.
Further, when the encapsulant of the LED package is laser-etched, the light emitted from the LED chip encapsulated in the encapsulant is very effectively emitted through the etched encapsulant surface. That is, the etching of the encapsulant increases the light extraction efficiency and improves the final brightness of the LED package by at least 10%.
4 is a configuration diagram illustrating an encapsulating material etching system of an LED package according to another embodiment of the present invention.
4, the encapsulant etching system of the LED package according to the present embodiment includes a
5 is a schematic view illustrating a pattern inspection position of the LED material M in the conveying path of the
6 shows an example in which the entire area of the LED material M is divided into a plurality of laser scanning areas a1, a2, a3, a4, a5 a6, a7, and a8) to the laser
10: Conveyor unit 20: Optical characteristic measuring unit
22: height measuring unit 30: laser etching unit
40: Optical characteristic measurement unit 50: Dry cleaning unit
60: loading unit 70: unloading unit
80: Integrated control unit
Claims (10)
A conveyor unit for conveying the LED material past a laser etch location;
A loading unit for loading the LED material onto the entrance side of the conveyor unit;
An unloading unit for unloading the LED material at an exit side of the conveyor unit;
A position / alignment confirmation unit for confirming the position or alignment of the LED material placed on the conveyor unit;
A laser etching unit for etching the encapsulants of the LED packages contained in the LED material with the laser at the laser etching position for the LED material whose position or alignment is confirmed by the position / alignment confirmation unit; And
And an integrated control unit for integrally controlling the position / alignment confirmation unit and the laser etching unit,
The laser etching unit includes a laser generating unit for generating a laser beam, a laser beam scanning unit for xy scanning the laser beam, a focus lens unit for forming a laser beam as a laser beam spot, And an XYZ moving unit for moving the main body made of the laser beam scanning unit and the focus lens unit in three axes in the X axis, the Y axis, and the Z axis.
Priority Applications (1)
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KR1020150115061A KR101606674B1 (en) | 2015-08-14 | 2015-08-14 | Etching system and method of molding compound of led package |
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KR1020150115061A KR101606674B1 (en) | 2015-08-14 | 2015-08-14 | Etching system and method of molding compound of led package |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190113231A (en) * | 2018-03-28 | 2019-10-08 | 한미반도체 주식회사 | Partial shield processing method for semiconductor member |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004282026A (en) | 2003-02-28 | 2004-10-07 | Semiconductor Energy Lab Co Ltd | Laser beam irradiation unit, laser beam irradiation method, and method of manufacturing laser beam irradiation system and semiconductor device |
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2015
- 2015-08-14 KR KR1020150115061A patent/KR101606674B1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004282026A (en) | 2003-02-28 | 2004-10-07 | Semiconductor Energy Lab Co Ltd | Laser beam irradiation unit, laser beam irradiation method, and method of manufacturing laser beam irradiation system and semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190113231A (en) * | 2018-03-28 | 2019-10-08 | 한미반도체 주식회사 | Partial shield processing method for semiconductor member |
KR102531817B1 (en) | 2018-03-28 | 2023-05-12 | 한미반도체 주식회사 | Partial shield processing method for semiconductor member |
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