KR101582374B1 - Composition for forming solar cell electrode and electrode prepared using the same - Google Patents
Composition for forming solar cell electrode and electrode prepared using the same Download PDFInfo
- Publication number
- KR101582374B1 KR101582374B1 KR1020130046332A KR20130046332A KR101582374B1 KR 101582374 B1 KR101582374 B1 KR 101582374B1 KR 1020130046332 A KR1020130046332 A KR 1020130046332A KR 20130046332 A KR20130046332 A KR 20130046332A KR 101582374 B1 KR101582374 B1 KR 101582374B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- solar cell
- metal
- weight
- composition
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 41
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 40
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 40
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 23
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 11
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 10
- 239000000075 oxide glass Substances 0.000 claims abstract description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 7
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- 229910000413 arsenic oxide Inorganic materials 0.000 claims description 3
- 229960002594 arsenic trioxide Drugs 0.000 claims description 3
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000007822 coupling agent Substances 0.000 claims description 3
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical group [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 3
- FZFYOUJTOSBFPQ-UHFFFAOYSA-M dipotassium;hydroxide Chemical compound [OH-].[K+].[K+] FZFYOUJTOSBFPQ-UHFFFAOYSA-M 0.000 claims description 3
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 239000004014 plasticizer Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- 239000013008 thixotropic agent Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 239000012963 UV stabilizer Substances 0.000 claims description 2
- 239000013530 defoamer Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 11
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- -1 more preferably Chemical compound 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229940032007 methylethyl ketone Drugs 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
- 239000000326 ultraviolet stabilizing agent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
본 발명은 은 분말; 산화납-산화비스무스-산화텔루륨-산화규소-산화바륨계 유리 프릿; 및 유기 비히클을 포함하는 조성물이고, 상기 유리 프릿은 제1 금속산화물인 산화납 20 내지 23 중량%; 제2 금속산화물인 산화비스무스 30 내지 34 중량%; 제3 금속산화물인 산화텔루륨 20 내지 25 중량%; 제4 금속산화물인 산화규소 5 내지 7 중량%; 제5 금속산화물인 산화바륨 3 내지 5 중량%; 및 상기 제1 내지 제5 금속산화물과 상이한 금속산화물인 제6 금속산화물 6 내지 22 중량%;를 포함하는 태양전지 전극 형성용 조성물에 관한 것으로, 상기 조성물로 제조된 태양전지 전극은 시리즈 저항이(Rs)이 최소화되어 Fill Factor 및 변환 효율이 우수하다.The present invention relates to silver powder; Lead oxide - bismuth oxide - tellurium oxide - silicon oxide - barium oxide glass frit; And an organic vehicle, wherein the glass frit comprises 20 to 23% by weight of lead oxide, the first metal oxide; 30 to 34 wt% of a second metal oxide, bismuth oxide; 20 to 25 wt% of a third metal oxide, tellurium oxide; 5 to 7% by weight of silicon oxide, which is a fourth metal oxide; 3 to 5 wt% of a fifth metal oxide, barium oxide; And 6 to 22% by weight of a sixth metal oxide which is a metal oxide different from the first to fifth metal oxides, wherein the solar cell electrode made of the composition has a series resistance of Rs) is minimized and the fill factor and conversion efficiency are excellent.
Description
본 발명은 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극에 관한 것이다.The present invention relates to a composition for forming a solar cell electrode and an electrode made therefrom.
태양전지는 태양광의 포톤(photon)을 전기로 변환시키는 pn 접합의 광전 효과를 이용하여 전기 에너지를 발생시킨다. 태양전지는 pn 접합이 구성되는 반도체 웨이퍼 또는 기판 상·하면에 각각 전면 전극과 후면 전극이 형성되어 있다. 태양전지는 반도체 웨이퍼에 입사되는 태양광에 의해 pn 접합의 광전 효과가 유도되고, 이로부터 발생된 전자들이 전극을 통해 외부로 흐르는 전류를 제공한다. 이러한 태양전지의 전극은 전극용 페이스트 조성물의 도포, 패터닝 및 소성에 의해, 웨이퍼 표면에 형성될 수 있다.Solar cells generate electrical energy by using the photoelectric effect of pn junction that converts photon of sunlight into electricity. The solar cell is formed with a front electrode and a rear electrode on a semiconductor wafer or a substrate on which a pn junction is formed. The photovoltaic effect of the pn junction is induced in the solar cell by the sunlight incident on the semiconductor wafer, and the electrons generated from the pn junction provide a current flowing to the outside through the electrode. Such an electrode of the solar cell can be formed on the surface of the wafer by applying, patterning and firing the electrode paste composition.
최근 태양전지의 효율을 증가시키기 위해 에미터(emitter)의 두께가 지속적으로 얇아짐에 따라, 태양전지의 성능을 저하시킬 수 있는 션팅(shunting) 현상을 유발시킬 수 있다. 또한, 태양전지의 효율을 증가시키기 위해 태양전지의 면적을 점차 증가시키고 있는데, 이는 태양전지의 접촉저항을 높여 태양전지의 효율을 감소시킬 수 있다.Recently, as the thickness of the emitter is continuously thinned to increase the efficiency of the solar cell, it may cause a shunting phenomenon which may degrade the performance of the solar cell. Further, the area of the solar cell is gradually increased to increase the efficiency of the solar cell, which can reduce the efficiency of the solar cell by increasing the contact resistance of the solar cell.
따라서, 웨이퍼와 접촉성을 향상하여 직렬저항(Rs)을 최소화시켜 변환 효율이 우수한 태양전지 전극을 제조할 수 있는 조성물의 개발이 시급히 요구되고 있다.
Accordingly, it is urgently required to develop a composition capable of improving solar cell electrodes having excellent conversion efficiency by minimizing the series resistance (Rs) by improving the contact with wafers.
본 발명의 목적은 시리즈 저항(Rs)을 최소화할 수 있는 태양전지 전극 형성용 조성물을 제공하는 것이다.It is an object of the present invention to provide a composition for forming a solar cell electrode capable of minimizing a series resistance (Rs).
본 발명의 다른 목적은 변환효율 및 Fill Factor 값이 우수한 태양전지 전극을 제공하는 것이다.Another object of the present invention is to provide a solar cell electrode having excellent conversion efficiency and fill factor.
본 발명의 또 다른 목적은 상기 조성물로부터 제조된 전극을 제공하는 것이다.It is another object of the present invention to provide an electrode made from the composition.
본 발명의 상기 및 기타의 목적들은 하기 설명되는 본 발명에 의하여 모두 달성될 수 있다.
The above and other objects of the present invention can be achieved by the present invention described below.
본 발명의 하나의 관점은 은 분말; 산화납-산화비스무스-산화텔루륨-산화규소-산화바륨계 유리 프릿; 및 유기 비히클을 포함하는 조성물이고, 상기 유리 프릿은 제1 금속산화물인 산화납 20 내지 23 중량%; 제2 금속산화물인 산화비스무스 30 내지 34 중량%; 제3 금속산화물인 산화텔루륨 20 내지 25 중량%; 제4 금속산화물인 산화규소 5 내지 7 중량%; 제5 금속산화물인 산화바륨 3 내지 5 중량%; 및 상기 제1 내지 제5 금속산화물과 상이한 금속산화물인 제6 금속산화물 6 내지 22 중량%;를 포함하는 태양전지 전극 형성용 조성물에 관한 것이다.One aspect of the present invention relates to a silver powder; Lead oxide - bismuth oxide - tellurium oxide - silicon oxide - barium oxide glass frit; And an organic vehicle, wherein the glass frit comprises 20 to 23% by weight of lead oxide, the first metal oxide; 30 to 34 wt% of a second metal oxide, bismuth oxide; 20 to 25 wt% of a third metal oxide, tellurium oxide; 5 to 7% by weight of silicon oxide, which is a fourth metal oxide; 3 to 5 wt% of a fifth metal oxide, barium oxide; And 6 to 22% by weight of a sixth metal oxide which is a metal oxide different from the first to fifth metal oxides.
상기 제6 금속산화물은 산화리튬(Li2O), 산화바나듐(V2O5), 산화인(P2O5), 산화마그네슘(MgO), 산화세륨(CeO2), 산화붕소(B2O3) 산화스트론튬(SrO), 산화몰리브덴(MoO3), 산화티탄(TiO2), 산화주석(SnO), 산화인듐(In2O3), 산화니켈(NiO), 산화구리(Cu2O or CuO), 산화나트륨(Na2O), 산화칼륨(K2O), 산화안티몬(Sb2O3, Sb2O4 또는 Sb2O5), 산화게르마늄(GeO2), 산화갈륨(Ga2O3), 산화칼슘(CaO), 산화비소(As2O3), 산화코발트(CoO or Co2O3), 산화지르코늄(ZrO2), 산화망간(MnO, Mn2O3 or Mn3O4) 및 산화알루미늄(Al2O3)으로 이루어진 군에서 선택된 1종 이상의 금속 산화물일 수 있다.The sixth metal oxide is lithium oxide (Li 2 O), vanadium oxide (V 2 O 5), oxidation of (P 2 O 5), magnesium (MgO), cerium (CeO 2), boron oxide oxide (B 2 O 3) strontium oxide (SrO), molybdenum oxide (MoO 3), titanium (TiO 2), tin oxide (SnO), indium oxide (In 2 O 3), nickel oxide (NiO), copper (Cu 2 O oxide or CuO), sodium (Na 2 O), potassium oxide (K 2 O), antimony oxide (Sb 2 O 3, Sb 2 O 4 or Sb 2 O 5), germanium oxide (GeO 2), gallium (Ga oxide 2 O 3 ), calcium oxide (CaO), arsenic oxide (As 2 O 3 ), cobalt oxide (CoO or Co 2 O 3 ), zirconium oxide (ZrO 2 ), manganese oxide (MnO, Mn 2 O 3 or Mn 3 O 4 ) and aluminum oxide (Al 2 O 3 ).
상기 유리 프릿은 산화규소와 상기 산화바륨을 1.2 : 1 내지 4 : 1의 중량비로 포함할 수 있다.The glass frit may contain silicon oxide and barium oxide in a weight ratio of 1.2: 1 to 4: 1.
상기 은 분말 60 내지 95 중량%; 상기 산화납-산화비스무스-산화텔루륨-산화규소-산화바륨계 유리 프릿 0.5 내지 20 중량%; 및 상기 유기 비히클 1 내지 30 중량%; 를 포함할 수 있다.60 to 95 wt% of the silver powder; 0.5 to 20% by weight of the lead oxide-bismuth oxide-tellurium oxide-silicon oxide-barium oxide glass frit; And 1 to 30% by weight of the organic vehicle; . ≪ / RTI >
상기 유리 프릿은 평균입경(D50)이 0.1 ㎛ 내지 10 ㎛일 수 있다.The glass frit may have an average particle diameter (D50) of 0.1 mu m to 10 mu m.
상기 조성물은 분산제, 요변제, 가소제, 점도 안정화제, 소포제, 안료, 자외선 안정제, 산화방지제 및 커플링제로 이루어진 군으로부터 선택되는 첨가제를 1종 이상 더 포함할 수 있다.The composition may further include at least one additive selected from the group consisting of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, a UV stabilizer, an antioxidant and a coupling agent.
본 발명의 또 다른 관점인 태양전지 전극은 상기 태양전지 전극 형성용 조성물로부터 형성될 수 있다.
A solar cell electrode, which is another aspect of the present invention, may be formed from the composition for forming the solar cell electrode.
본 발명의 태양전지 전극 형성용 조성물로 제조된 태양전지 전극은 직렬저항(Rs)이 최소화되어 Fill Factor 및 변환 효율이 우수하다.
The solar cell electrode made of the composition for forming a solar cell electrode of the present invention has a minimum series resistance (Rs) and excellent fill factor and conversion efficiency.
도 1은 본 발명의 일 실시예에 따른 태양전지의 구조를 간략히 도시한 개략도이다. 1 is a schematic view briefly showing a structure of a solar cell according to an embodiment of the present invention.
태양전지 전극 형성용 조성물Composition for forming solar cell electrode
본 발명의 태양전지 전극 형성용 조성물은 은 분말; PbO-Bi2O3-TeO2-SiO2-BaO계 유리 프릿; 및 유기 비히클;을 포함하는 태양전지 전극 형성용 조성물로서, 상기 조성물로 제조된 태양전지 전극은 직렬저항(Rs)이 최소화되어 Fill Factor 및 변환 효율이 우수하다.
The composition for forming a solar cell electrode of the present invention comprises silver powder; PbO-Bi2O3-TeO2-SiO2-BaO glass frit; And an organic vehicle. The solar cell electrode made of the composition has a minimum series resistance (Rs) and excellent fill factor and conversion efficiency.
이하, 본 발명을 상세히 설명하면, 다음과 같다.
Hereinafter, the present invention will be described in detail.
(A) 은 분말 (A) is powder
본 발명의 태양전지 전극 형성용 조성물은 도전성 분말로서 은(Ag) 분말을 사용한다. 상기 은 분말은 나노 사이즈 또는 마이크로 사이즈의 입경을 갖는 분말일 수 있는데, 예를 들어 수십 내지 수백 나노미터 크기의 은 분말, 수 내지 수십 마이크로미터의 은 분말일 수 있으며, 2 이상의 서로 다른 사이즈를 갖는 은 분말을 혼합하여 사용할 수 있다.The composition for forming a solar cell electrode of the present invention uses silver (Ag) powder as the conductive powder. The silver powder may be a nano-sized or micro-sized powder, for example, a silver powder having a size of several tens to several hundreds of nanometers, a silver powder of several to several tens of micrometers, Silver powder may be mixed and used.
은 분말은 입자 형상이 구형, 판상, 무정형 형상을 가질 수 있다The silver powder may have a spherical shape, a plate shape, and an amorphous shape as the particle shape
은 분말은 평균입경(D50)은 바람직하게는 0.1㎛ 내지 10㎛이며, 더욱 바람직하게는 0.5㎛ 내지 5㎛이 될 수 있다. 상기 평균입경은 이소프로필알코올(IPA)에 도전성 분말을 초음파로 25℃에서 3분 동안 분산시킨 후 CILAS社에서 제작한 1064LD 모델을 사용하여 측정된 것이다. 상기 범위 내에서, 접촉저항과 선 저항이 낮아지는 효과를 가질 수 있다. The average particle diameter (D50) of the silver powder is preferably 0.1 to 10 mu m, more preferably 0.5 to 5 mu m. The average particle diameter was measured using a 1064 LD model manufactured by CILAS after dispersing the conductive powder in isopropyl alcohol (IPA) by ultrasonication at 25 캜 for 3 minutes. Within this range, the contact resistance and line resistance can be lowered.
은 분말은 조성물 전체 중량 대비 (60) 내지 (95) 중량%로 포함될 수 있다. 상기 범위에서, 저항의 증가로 변환 효율이 낮아지는 것을 막을 수 있다. 바람직하게는 70 내지 90 중량%로 포함될 수 있다.
The silver powder may be contained in an amount of (60) to (95)% by weight based on the total weight of the composition. In this range, it is possible to prevent the conversion efficiency from being lowered by increasing the resistance. Preferably 70 to 90% by weight.
(B) (B) 산화납Lead oxide -- 산화비스무스Bismuth oxide -- 산화텔루륨Tellurium oxide -- 산화규소Silicon oxide -산화바륨계 유리 - barium oxide glass 프릿Frit
유리 프릿(glass frit)은 전극 페이스트의 소성 공정 중 반사 방지막을 에칭(etching)하고, 은 입자를 용융시켜 저항이 낮아질 수 있도록 에미터 영역에 은 결정 입자를 생성시키고, 전도성 분말과 웨이퍼 사이의 접착력을 향상시키고 소결시에 연화하여 소성 온도를 보다 낮추는 효과를 유도한다.The glass frit is formed by etching the antireflection film during the firing process of the electrode paste, melting the silver particles to produce silver grains in the emitter region so that the resistance can be lowered, and the adhesion between the conductive powder and the wafer And softening at sintering to lower the firing temperature.
태양전지의 효율 또는 Fill Factor를 증가시키기 위하여 태양전지의 면적을 증가시키면 태양전지의 접촉저항이 높아질 수 있으므로 pn 접합(pn junction)에 대한 피해를 최소화함과 동시에 직렬저항을 최소화시켜야 한다. 또한, 다양한 면저항의 웨이퍼의 증가에 따라 소성 온도가 변동폭이 커지므로 넓은 소성 온도에서도 열안정성을 충분히 확보될 수 있는 유리 프릿을 사용하는 것이 바람직하다.Increasing the area of the solar cell to increase the efficiency or the fill factor of the solar cell may increase the contact resistance of the solar cell and minimize the damage to the pn junction and minimize the series resistance. In addition, it is preferable to use a glass frit which can sufficiently secure thermal stability even at a wide firing temperature because the range of variation in firing temperature becomes large as wafers of various sheet resistances increase.
본 발명은 제조된 전극의 직렬저항을 최소화시키기 위하여 유연 유리 프릿으로서 산화납-산화비스무스-산화텔루륨-산화규소-산화바륨(PbO-Bi2O3-TeO2-SiO2-BaO)계 유리 프릿을 도입하였다. The present invention introduces lead oxide-bismuth-tellurium oxide-silicon oxide-barium oxide (PbO-Bi2O3-TeO2-SiO2-BaO) glass frit as a flexible glass frit in order to minimize the series resistance of the produced electrode.
상기 산화납-산화비스무스-산화텔루륨-산화규소-산화바륨계 유리 프릿은 제1 내지 제5 금속산화물로서 산화납, 산화비스무스, 산화텔루륨, 산화규소 및 산화바륨을 필수적으로 포함하며, 상기 제1 내지 제5 금속산화물과 상이한 제6 금속산화물을 더 포함할 수 있다. The lead oxide-bismuth oxide-tellurium oxide-silicon oxide-barium oxide glass frit essentially contains lead oxide, bismuth oxide, tellurium oxide, silicon oxide and barium oxide as the first to fifth metal oxides, And may further include a sixth metal oxide different from the first to fifth metal oxides.
본 발명의 일 구체예로서, 상기 유리 프릿은 제1 금속산화물인 산화납 20 내지 23 중량%; 제2 금속산화물인 산화비스무스 30 내지 34 중량%; 제3 금속산화물인 산화텔루륨 20 내지 25 중량%; 제4 금속산화물인 산화규소 5 내지 7 중량%; 제5 금속산화물인 산화바륨 3 내지 5 중량%; 및 제6 금속산화물 6 내지 22 중량%;를 포함할 수 있으며, 상기 범위에서 직렬저항(Rs)을 최소화하여 우수한 변환효율(Efficiency)을 확보할 수 있다. 상기 제6 금속산화물은 산화리튬(Li2O), 산화바나듐(V2O5), 산화인(P2O5), 산화마그네슘(MgO), 산화세륨(CeO2), 산화붕소(B2O3) 산화스트론튬(SrO), 산화몰리브덴(MoO3), 산화티탄(TiO2), 산화주석(SnO), 산화인듐(In2O3), 산화니켈(NiO), 산화구리(Cu2O or CuO), 산화나트륨(Na2O), 산화칼륨(K2O), 산화안티몬(Sb2O3, Sb2O4 또는 Sb2O5), 산화게르마늄(GeO2), 산화갈륨(Ga2O3), 산화칼슘(CaO), 산화비소(As2O3), 산화코발트(CoO or Co2O3), 산화지르코늄(ZrO2), 산화망간(MnO, Mn2O3 or Mn3O4) 및 산화알루미늄(Al2O3)으로 이루어진 군에서 선택된 1종 이상의 금속 산화물일 수 있다. 상기 범위에서 직렬저항(Rs)을 최소화하여 우수한 변환효율(Efficiency)을 확보할 수 있다.In one embodiment of the present invention, the glass frit comprises 20 to 23% by weight of lead oxide, the first metal oxide; 30 to 34 wt% of a second metal oxide, bismuth oxide; 20 to 25 wt% of a third metal oxide, tellurium oxide; 5 to 7% by weight of silicon oxide, which is a fourth metal oxide; 3 to 5 wt% of a fifth metal oxide, barium oxide; And 6 to 22% by weight of the sixth metal oxide. In this range, the series resistance (Rs) can be minimized and excellent conversion efficiency can be secured. The sixth metal oxide is lithium oxide (Li 2 O), vanadium oxide (V 2 O 5), oxidation of (P 2 O 5), magnesium (MgO), cerium (CeO 2), boron oxide oxide (B 2 O 3) strontium oxide (SrO), molybdenum oxide (MoO 3), titanium (TiO 2), tin oxide (SnO), indium oxide (In 2 O 3), nickel oxide (NiO), copper (Cu 2 O oxide or CuO), sodium (Na 2 O), potassium oxide (K 2 O), antimony oxide (Sb 2 O 3, Sb 2 O 4 or Sb 2 O 5), germanium oxide (GeO 2), gallium (Ga oxide 2 O 3 ), calcium oxide (CaO), arsenic oxide (As 2 O 3 ), cobalt oxide (CoO or Co 2 O 3 ), zirconium oxide (ZrO 2 ), manganese oxide (MnO, Mn 2 O 3 or Mn 3 O 4 ) and aluminum oxide (Al 2 O 3 ). In this range, the series resistance (Rs) can be minimized and excellent conversion efficiency can be ensured.
다른 구체예로서, 상기 유리 프릿은 산화규소의 함량이 산화바륨의 함량보다 큰 것이 바람직하며, 더욱 바람직하게는 산화규소와 산화바륨이 1.2 : 1 내지 4 : 1의 중량비로 포함되는 것이 바람직하다.In another embodiment, the content of silicon oxide in the glass frit is preferably larger than that of barium oxide, more preferably, silicon oxide and barium oxide are contained in a weight ratio of 1.2: 1 to 4: 1.
또 다른 구체예에서 상기 유리프릿에 함유된 산화납-산화비스무스-산화텔루륨-산화규소-산화바륨의 함량은 산화납 > 산화비스무스 > 산화텔루륨 >산화규소 > 산화바륨 일 수 있다. 이 경우 반사방지막 에칭으로 인한 직렬 저항을 최소화 할 수 있는 장점이 있다. In another embodiment, the content of lead oxide-bismuth oxide-tellurium oxide-silicon oxide-barium oxide contained in the glass frit may be lead oxide> bismuth oxide> tellurium oxide> silicon oxide> barium oxide. In this case, there is an advantage that the series resistance due to the anti-reflection film etching can be minimized.
상기 유리 프릿은 통상의 방법을 사용하여 상기 기술된 금속 산화물로부터 제조할 수 있다. 예를 들면, 상기 기술된 금속산화물의 조성으로 혼합한다. 혼합은 볼 밀(ball mill) 또는 플라네터리 밀(planetary mill)을 사용하여 혼합할 수 있다. 혼합된 조성물을 900℃-1300℃의 조건에서 용융시키고, 25℃에서 ?칭(quenching)한다. 얻은 결과물을 디스크 밀(disk mill), 플라네터리 밀 등에 의해 분쇄하여 유리 프릿을 얻을 수 있다. The glass frit can be prepared from the metal oxides described above using conventional methods. For example, in the composition of the metal oxide described above. The blend can be mixed using a ball mill or a planetary mill. The mixed composition is melted at a temperature of 900 ° C to 1300 ° C and quenched at 25 ° C. The resulting product is pulverized by a disk mill, a planetary mill or the like to obtain a glass frit.
상기 유리 프릿은 평균입경(D50)이 0.1 내지 10 ㎛인 것이 사용될 수 있으며,조성물 전체 중량을 기준으로 1.5 내지 2 중량% 포함될 수 있다. 상기 유리 프릿의 형상은 구형이거나 부정형상이어도 무방하다.
The glass frit may have an average particle diameter (D50) of 0.1 to 10 [mu] m and may include 1.5 to 2% by weight based on the total weight of the composition. The shape of the glass frit may be spherical or irregular.
(C) 유기 (C) Organic 비히클Vehicle
유기 비히클은 태양전지 전극 형성용 조성물의 무기성분과 기계적 혼합을 통하여 페이스트 조성물에 인쇄에 적합한 점도 및 유변학적 특성을 부여한다.The organic vehicle imparts suitable viscosity and rheological properties to the paste composition through mechanical mixing with inorganic components of the composition for forming the solar cell electrode.
상기 유기 비히클은 통상적으로 태양전지 전극 형성용 조성물에 사용되는 유기 비히클이 사용될 수 있는데, 통상 바인더 수지와 용매 등을 포함할 수 있다.The organic vehicle may be an organic vehicle usually used in a composition for forming a solar cell electrode, and may generally include a binder resin, a solvent, and the like.
상기 바인더 수지로는 아크릴레이트계 또는 셀룰로오스계 수지 등을 사용할 수 있으며 에틸 셀룰로오스가 일반적으로 사용되는 수지이다. 그러나, 에틸 하이드록시에틸 셀룰로오스, 니트로 셀룰로오스, 에틸 셀룰로오스와 페놀 수지의 혼합물, 알키드 수지, 페놀계 수지, 아크릴산 에스테르계 수지, 크실렌계 수지, 폴리부텐계 수지, 폴리에스테르계 수지, 요소계 수지, 멜라민계 수지, 초산비닐계 수지, 목재 로진(rosin) 또는 알콜의 폴리메타크릴레이트 등을 사용할 수도 있다.As the binder resin, an acrylate-based or cellulose-based resin can be used, and ethylcellulose is generally used. However, it is preferable to use a mixture of ethylhydroxyethylcellulose, nitrocellulose, a mixture of ethylcellulose and phenol resin, an alkyd resin, a phenol resin, an acrylic ester resin, a xylene resin, a polybutene resin, a polyester resin, Based resin, a rosin of wood, or a polymethacrylate of alcohol may be used.
상기 용매로는 예를 들어, 헥산, 톨루엔, 에틸셀로솔브, 시클로헥사논, 부틸센로솔브, 부틸 카비톨(디에틸렌 글리콜 모노부틸 에테르), 디부틸 카비톨(디에틸렌 글리콜 디부틸 에테르), 부틸 카비톨 아세테이트(디에틸렌 글리콜 모노부틸 에테르 아세테이트), 프로필렌 글리콜 모노메틸 에테르, 헥실렌 글리콜, 터핀올(Terpineol), 메틸에틸케톤, 벤질알콜, 감마부티로락톤 또는 에틸락테이트 등을 단독 또는 2종 이상 혼합하여 사용할 수 있다. Examples of the solvent include hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether) , Butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methyl ethyl ketone, benzyl alcohol, gamma butyrolactone or ethyl lactate, Two or more of them may be used in combination.
상기 유기 비히클의 배합량은 조성물 전체 중량에 대하여 (1) 내지 (30) 중량%일 수 있다. 상기 범위에서 충분한 접착강도와 우수한 인쇄성을 확보할 수 있다.
The blending amount of the organic vehicle may be (1) to (30)% by weight based on the total weight of the composition. Within this range, sufficient adhesive strength and excellent printability can be ensured.
(D) 첨가제(D) Additive
본 발명의 태양전지 전극 형성용 조성물은 상기한 구성 요소 외에 유동 특성, 공정 특성 및 안정성을 향상시키기 위하여 필요에 따라 통상의 첨가제를 더 포함할 수 있다. 상기 첨가제는 분산제, 요변제, 가소제, 점도 안정화제, 소포제, 안료, 자외선 안정제, 산화방지제, 커플링제 등을 단독 또는 2종 이상 혼합하여 사용할 수 있다. 이들은 조성물 전제 중량에 대하여 0.1 내지 5 중량%로 첨가되지만 필요에 따라 변경할 수 있다.
The composition for forming a solar cell electrode of the present invention may further include conventional additives as necessary in order to improve flow characteristics, process characteristics, and stability in addition to the above-described components. The additive may be used alone or as a mixture of two or more of a dispersing agent, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoaming agent, a pigment, an ultraviolet stabilizer, an antioxidant and a coupling agent. These are added in an amount of 0.1 to 5% by weight based on the total weight of the composition, but they can be changed as needed.
태양전지 전극 및 이를 포함하는 태양전지Solar cell electrode and solar cell comprising same
본 발명의 다른 관점은 상기 태양전지 전극 형성용 조성물부터 형성된 전극 및 이를 포함하는 태양전지에 관한 것이다. 도 1은 본 발명의 한 구체예에 따른 태양전지의 구조를 나타낸 것이다.Another aspect of the present invention relates to an electrode formed from the composition for forming a solar cell electrode and a solar cell including the same. 1 shows a structure of a solar cell according to one embodiment of the present invention.
도 1을 참조하면, p층(101) 및 에미터로서의 n층(102)을 포함하는 웨이퍼(100) 또는 기판 상에, 상기 태양전지 전극 형성용 조성물을 인쇄하고 소성하여 후면 전극(210) 및 전면 전극(230)을 형성할 수 있다. 예컨대, 태양전지 전극 형성용 조성물을 웨이퍼의 후면에 인쇄 도포한 후, 대략 200℃ 내지 400℃ 온도로 대략 10 내지 60초 정도 건조하여 후면 전극을 위한 사전 준비 단계를 수행할 수 있다. 또한, 웨이퍼의 전면에 태양전지 전극 형성용 조성물을 인쇄한 후 건조하여 전면 전극을 위한 사전 준비단계를 수행할 수 있다. 이후에, 400℃ 내지 950℃, 바람직하게는 850℃ 내지 950℃에서 30초 내지 50초 정도 소성하는 소성 과정을 수행하여 전면 전극 및 후면 전극을 형성할 수 있다.
1, the composition for forming a solar cell electrode is printed and fired on a
이하, 실시예를 통하여 본 발명을 보다 구체적으로 설명하고자 하나, 이러한 실시예들은 단지 설명의 목적을 위한 것으로, 본 발명을 제한하는 것으로 해석되어서는 안 된다.
Hereinafter, the present invention will be described in more detail by way of examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.
실시예Example
실시예Example 1 One
제1 내지 제5 금속산화물로서 산화납, 산화비스무스, 산화텔루륨, 산화규소 및 산화바륨, 제6 금속산화물로 산화아연 및 산화텅스텐을 하기 표 1의 조성으로 혼합하여 900 내지 1400℃에서 용융 및 소결과정을 거쳐 평균입경(D50)이 3 ㎛인 산화비스무스-산화텔루륨-산화텅스텐-산화아연계 유리 프릿을 제조하였다. Lead oxide, barium oxide, tellurium oxide, silicon oxide and barium oxide as the first to fifth metal oxides, zinc oxide and tungsten oxide as the sixth metal oxide are mixed in the composition shown in Table 1 and melted and melted at 900 to 1400 ° C. And then a sintering process was performed to produce a bismuth-tellurium oxide-tungsten oxide-zinc oxide-based glass frit having an average particle size (D50) of 3 占 퐉.
유기 바인더로서 에틸셀룰로오스 (Dow chemical company, STD4) 20 중량%를 용매인 부틸 카비톨 (Butyl Carbitol) 80 중량%에 60℃에서 충분히 용해한 후 평균입경이 2 ㎛인 구형의 은 분말(Dowa Hightech CO. LTD, AG-4-8) 88.1 중량%, 상기 제조된 산화비스무스-산화텔루륨-산화텅스텐-산화아연계 유리 프릿 1.5 중량%, 첨가제로서 분산제 BYK102(BYK-chemie) 0.3 중량% 및 요변제 Thixatrol ST (Elementis co.) 0.5 중량%를 투입하여 골고루 믹싱 후 3롤 혼련기로 혼합 분산시켜 태양전지 전극 형성용 조성물을 제조하였다.20% by weight of ethyl cellulose (STD4) as an organic binder was sufficiently dissolved in 80% by weight of butylcarbitol as a solvent at 60 占 폚, and spherical silver powder having an average particle diameter of 2 占 퐉 (Dowa Hightech CO. 1.5% by weight of the above prepared bismuth oxide-tellurium oxide-tungsten oxide-zinc oxide glass frit, 0.3% by weight of dispersant BYK-102 (BYK-chemie) as an additive and 88.1% by weight of Thixatrol And 0.5% by weight of ST (Elementis co.) Were mixed and dispersed with a 3 roll kneader to prepare a composition for forming a solar cell electrode.
상기 태양전지 전극 형성용 조성물을 100 Ω/sq.의 면저항을 가지는 웨이퍼(Wafer) 전면에 일정한 패턴으로 스크린 프린팅 하여 인쇄하고, 적외선 건조로를 사용하여 건조시켰다. 이후 웨이퍼의 후면에 알루미늄 페이스트를 인쇄한 후 동일한 방법으로 건조하였다. 상기 과정으로 형성된 Cell을 벨트형 소성로를 사용하여 400 내지 900 ℃에서 40초간 소성을 행하였으며, 이렇게 제조 완료된 Cell은 태양전지효율 측정장비 (Pasan社, CT-801)를 사용하여 직렬저항 Rs(Ω)를 측정한 후 하기 표 1에 함께 나타내었다.
The composition for forming the solar cell electrode was screen-printed on the entire surface of a wafer having a sheet resistance of 100 OMEGA / sq. By a predetermined pattern, and dried using an infrared ray drying furnace. Thereafter, aluminum paste was printed on the rear surface of the wafer and dried in the same manner. The cells thus formed were sintered at 400 to 900 ° C for 40 seconds using a belt-type sintering furnace. The cells thus manufactured were subjected to a series resistance Rs (Ω) using a solar cell efficiency measuring device (Pasan Co., ) Were measured and are shown together in Table 1 below.
실시예Example 2 내지 3 및 2 to 3 and 비교예Comparative Example 1 내지 12 1 to 12
하기 표 1의 함량으로 유리 프릿을 제조한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 태양전지 전극 형성용 조성물을 제조한 후 물성을 측정하여 하기 표 1에 함께 나타내었다.
The composition for forming a solar cell electrode was prepared in the same manner as in Example 1 except that glass frit was prepared in the contents shown in the following Table 1, and physical properties thereof were measured and shown in Table 1 below.
[표 1] [Table 1]
상기 표 1에서 보듯이, 실시예 1 내지 3의 유리 프릿을 사용한 태양전지 전극 형성용 조성물로 제조된 태양전지 전극은 본 발명의 유리 프릿 조성을 벗어나는 비교예 1 내지 12에 비하여 측정된 직렬저항 값이 현저히 낮은 것을 알 수 있다.As shown in Table 1, the solar cell electrode made of the composition for forming a solar cell electrode using the glass frit of Examples 1 to 3 had a series resistance value measured in comparison with Comparative Examples 1 to 12, Which is remarkably low.
본 발명의 단순한 변형 내지 변경은 이 분야의 통상의 지식을 가진 자에 의하여 용이하게 실시될 수 있으며, 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다.It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
제1 금속산화물인 산화납 20 내지 23 중량%;
제2 금속산화물인 산화비스무스 30 내지 34 중량%;
제3 금속산화물인 산화텔루륨 20 내지 25 중량%;
제4 금속산화물인 산화규소 5 내지 7 중량%;
제5 금속산화물인 산화바륨 3 내지 5 중량%; 및
상기 제1 내지 제5 금속산화물과 상이한 금속산화물인 제6 금속산화물 6 내지 22 중량%;를 포함하는 것을 특징으로 하는 태양전지 전극 형성용 조성물.
Silver powder; Lead oxide - bismuth oxide - tellurium oxide - silicon oxide - barium oxide glass frit; And an organic vehicle, wherein the glass frit comprises
20 to 23% by weight of lead oxide which is the first metal oxide;
30 to 34 wt% of a second metal oxide, bismuth oxide;
20 to 25 wt% of a third metal oxide, tellurium oxide;
5 to 7% by weight of silicon oxide, which is a fourth metal oxide;
3 to 5 wt% of a fifth metal oxide, barium oxide; And
And 6 to 22% by weight of a sixth metal oxide which is a metal oxide different from the first to fifth metal oxides.
상기 제6 금속산화물은 산화리튬(Li2O), 산화바나듐(V2O5), 산화인(P2O5), 산화마그네슘(MgO), 산화세륨(CeO2), 산화붕소(B2O3) 산화스트론튬(SrO), 산화몰리브덴(MoO3), 산화티탄(TiO2), 산화주석(SnO), 산화인듐(In2O3), 산화니켈(NiO), 산화구리(Cu2O or CuO), 산화나트륨(Na2O), 산화칼륨(K2O), 산화안티몬(Sb2O3, Sb2O4 또는 Sb2O5), 산화게르마늄(GeO2), 산화갈륨(Ga2O3), 산화칼슘(CaO), 산화비소(As2O3), 산화코발트(CoO or Co2O3), 산화지르코늄(ZrO2), 산화망간(MnO, Mn2O3 or Mn3O4) 및 산화알루미늄(Al2O3)으로 이루어진 군에서 선택된 1종 이상의 금속 산화물인 것을 특징으로 하는 태양전지 전극 형성용 조성물.
The method according to claim 1,
The sixth metal oxide is lithium oxide (Li 2 O), vanadium oxide (V 2 O 5), oxidation of (P 2 O 5), magnesium (MgO), cerium (CeO 2), boron oxide oxide (B 2 O 3) strontium oxide (SrO), molybdenum oxide (MoO 3), titanium (TiO 2), tin oxide (SnO), indium oxide (In 2 O 3), nickel oxide (NiO), copper (Cu 2 O oxide or CuO), sodium (Na 2 O), potassium oxide (K 2 O), antimony oxide (Sb 2 O 3, Sb 2 O 4 or Sb 2 O 5), germanium oxide (GeO 2), gallium (Ga oxide 2 O 3 ), calcium oxide (CaO), arsenic oxide (As 2 O 3 ), cobalt oxide (CoO or Co 2 O 3 ), zirconium oxide (ZrO 2 ), manganese oxide (MnO, Mn 2 O 3 or Mn 3 O 4 ) and aluminum oxide (Al 2 O 3 ).
상기 유리 프릿은 산화규소와 상기 산화바륨을 1.2 : 1 내지 4 : 1의 중량비로 포함하는 태양전지 전극 형성용 조성물.
The method according to claim 1,
Wherein the glass frit comprises silicon oxide and barium oxide in a weight ratio of 1.2: 1 to 4: 1.
상기 은 분말 60 내지 95 중량%; 상기 산화납-산화비스무스-산화텔루륨-산화규소-산화바륨계 유리 프릿 0.5 내지 20 중량%; 및 상기 유기 비히클 1 내지 30 중량%; 를 포함하는 태양전지 전극 형성용 조성물.
The method according to claim 1,
60 to 95 wt% of the silver powder; 0.5 to 20% by weight of the lead oxide-bismuth oxide-tellurium oxide-silicon oxide-barium oxide glass frit; And 1 to 30% by weight of the organic vehicle; Wherein the composition for forming a solar cell electrode is a composition for forming a solar cell electrode.
상기 유리 프릿은 평균입경(D50)이 0.1 ㎛ 내지 10 ㎛인 것을 특징으로 하는 태양전지 전극 형성용 조성물.
The method according to claim 1,
Wherein the glass frit has an average particle diameter (D50) of 0.1 占 퐉 to 10 占 퐉.
상기 조성물은 분산제, 요변제, 가소제, 점도 안정화제, 소포제, 안료, 자외선 안정제, 산화방지제 및 커플링제로 이루어진 군으로부터 선택되는 첨가제를 1종 이상 더 포함하는 것을 특징으로 하는 태양전지 전극 형성용 조성물.
The method according to claim 1,
Wherein the composition further comprises at least one additive selected from the group consisting of a dispersing agent, a thixotropic agent, a plasticizer, a viscosity stabilizer, a defoamer, a pigment, a UV stabilizer, an antioxidant and a coupling agent .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130046332A KR101582374B1 (en) | 2013-04-25 | 2013-04-25 | Composition for forming solar cell electrode and electrode prepared using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130046332A KR101582374B1 (en) | 2013-04-25 | 2013-04-25 | Composition for forming solar cell electrode and electrode prepared using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140127946A KR20140127946A (en) | 2014-11-05 |
| KR101582374B1 true KR101582374B1 (en) | 2016-01-04 |
Family
ID=52451934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130046332A KR101582374B1 (en) | 2013-04-25 | 2013-04-25 | Composition for forming solar cell electrode and electrode prepared using the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101582374B1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011138949A (en) | 2009-12-28 | 2011-07-14 | Noritake Co Ltd | Conductive paste composition for solar cell |
| WO2011140189A1 (en) | 2010-05-04 | 2011-11-10 | E. I. Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
| JP2012043789A (en) | 2010-08-13 | 2012-03-01 | Samsung Electronics Co Ltd | Conductive paste, and electronic element and solar cell having electrode formed by using conductive paste |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101960465B1 (en) * | 2010-10-27 | 2019-03-21 | 삼성전자주식회사 | Conductive paste and solar cell |
-
2013
- 2013-04-25 KR KR1020130046332A patent/KR101582374B1/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011138949A (en) | 2009-12-28 | 2011-07-14 | Noritake Co Ltd | Conductive paste composition for solar cell |
| WO2011140189A1 (en) | 2010-05-04 | 2011-11-10 | E. I. Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
| JP2012043789A (en) | 2010-08-13 | 2012-03-01 | Samsung Electronics Co Ltd | Conductive paste, and electronic element and solar cell having electrode formed by using conductive paste |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140127946A (en) | 2014-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101587683B1 (en) | The composition for forming solar cell electrode comprising the same, and electrode prepared using the same | |
| KR101608123B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101648242B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101659131B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101596548B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101716525B1 (en) | Electrode paste composition and electrode prepared using the same | |
| KR20140092489A (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR20160014503A (en) | Composition for forming solar cell electrode, electrode prepared using the same, and solar cell having the electrode | |
| KR101600659B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR20140092488A (en) | Composition for forming solar cell and electrode prepared using the same | |
| KR101648245B1 (en) | The composition for forming solar cell electrode comprising the same, and electrode prepared using the same | |
| KR101980946B1 (en) | Front electrode for solar cell and solar cell comprising the same | |
| KR101590224B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101659118B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101845102B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101566071B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR102018364B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101582374B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR20160075422A (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101835921B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR20190073210A (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101737172B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR101590226B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same | |
| KR20200075682A (en) | Composition for forming dsw based solar cell electrode and dsw based solar cell electrode prepared using the same | |
| KR20190045758A (en) | Composition for forming solar cell electrode and electrode prepared using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20181119 Year of fee payment: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20191203 Year of fee payment: 5 |