KR101579434B1 - Method for manufacturing led package - Google Patents

Method for manufacturing led package Download PDF

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Publication number
KR101579434B1
KR101579434B1 KR1020140004142A KR20140004142A KR101579434B1 KR 101579434 B1 KR101579434 B1 KR 101579434B1 KR 1020140004142 A KR1020140004142 A KR 1020140004142A KR 20140004142 A KR20140004142 A KR 20140004142A KR 101579434 B1 KR101579434 B1 KR 101579434B1
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KR
South Korea
Prior art keywords
forming
semiconductor substrate
layer
bonding
semiconductor
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KR1020140004142A
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Korean (ko)
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KR20150084289A (en
Inventor
옥진영
Original Assignee
하나 마이크론(주)
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Priority to KR1020140004142A priority Critical patent/KR101579434B1/en
Publication of KR20150084289A publication Critical patent/KR20150084289A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

There is provided a semiconductor package manufacturing method which can simplify a manufacturing process and reduce manufacturing cost by omitting a process of bonding a glass substrate to an upper part of an interposer in the process of forming a lower re-wiring layer of an interposer included in a semiconductor package do. A) forming a bonding pad on the conductive via, the upper redistribution layer and the upper redistribution layer on the upper surface of the semiconductor substrate; b) bonding a semiconductor die to the semiconductor substrate so as to be electrically connected to the bonding pads; c) forming a mold over the semiconductor substrate to cover the semiconductor die; And d) forming a lower re-wiring layer on the lower surface of the semiconductor substrate.

Description

[0001] METHOD FOR MANUFACTURING LED PACKAGE [0002]

The present invention relates to a method of manufacturing a semiconductor package, and more particularly, to a manufacturing method of a semiconductor package by omitting a step of bonding a glass substrate to an upper part of an interposer in a process of forming a lower redistribution layer of an interposer included in a semiconductor package And more particularly, to a method of manufacturing a semiconductor package that can simplify manufacturing cost and reduce manufacturing cost.

BACKGROUND ART [0002] Recent trends in the electronics industry are moving toward the production of lightweight, miniaturized, high-speed, multi-functional and highly reliable products at low cost. One of the important technologies that make this possible is package technology. Among these package technologies, the interposer realizes the three-dimensional structure and miniaturization.

The interposer can be manufactured using mainly a silicon material as a substrate for forming an electric transfer interface with one socket or a connection with another socket or connection.

Generally, when a package using a silicon interposer is manufactured, a separate carrier substrate must be used to process a thin silicon. Therefore, a silicon substrate may be separately attached to a carrier substrate, a silicon substrate may be separated from the carrier substrate A process is complicated because the process is additionally required. For example, after an upper redistribution layer is formed on a silicon substrate in the process of manufacturing an interposer, the upper redistribution layer is formed, and the upper portion of the silicon substrate is adhered to the glass carrier substrate, and then a lower redistribution layer is formed. In this process, a process of spin-coating an adhesive layer on a silicon substrate on which an upper redistribution layer has been formed, and forming a separation layer on a bonding surface of the glass carrier substrate using a chemical vapor deposition process are needed. Further, in order to remove the glass carrier substrate after forming the lower re-wiring layer, a separation layer removing process using a laser and an adhesive layer removing process are required.

Such a complicated interposer manufacturing process complicates the semiconductor package manufacturing process and increases the manufacturing cost and raises the problem of raising the cost of the semiconductor package.

The present invention relates to a semiconductor package that can simplify a manufacturing process and reduce manufacturing cost by omitting a step of bonding a glass substrate to an upper part of an interposer in the process of forming a lower re-wiring layer of an interposer included in a semiconductor package And a method of manufacturing the same.

According to an aspect of the present invention,

a) forming a bonding pad on the conductive via, the upper redistribution layer and the upper redistribution layer on the upper surface of the semiconductor substrate;

b) bonding a semiconductor die to the semiconductor substrate so as to be electrically connected to the bonding pads;

c) forming a mold over the semiconductor substrate to cover the semiconductor die; And

d) forming a lower re-wiring layer on the lower surface of the semiconductor substrate

And a semiconductor package.

An embodiment of the present invention may further include: e) electrically connecting the lower re-wiring layer and the printed circuit board, and mounting the structure formed by the steps a to d on the printed circuit board have.

According to an embodiment of the present invention, the step b) includes the steps of: fixing the lower surface of the semiconductor substrate on which the upper rewiring layer and the bonding pad are formed, on the metal carrier; And bonding a semiconductor die on the bonding pad to be in electrical contact with the bonding pad.

In an embodiment of the present invention, the step b) comprises: bonding a semiconductor die on the bonding pad so as to be in electrical contact with the bonding pad; And fixing the bottom surface of the semiconductor substrate to which the semiconductor die is bonded, on a metal carrier.

In one embodiment of the present invention, the fixing step may include attaching the metal carrier and the lower surface of the semiconductor substrate to each other using a heat transfer tape.

In one embodiment of the present invention, the step c) includes the steps of: forming a molding part to cover the upper portion of the semiconductor substrate fixed on the metal carrier and the semiconductor die; And separating the semiconductor substrate on which the molding portion is formed from the metal carrier.

According to another aspect of the present invention,

a) forming a bonding pad on the conductive via, the upper redistribution layer and the upper redistribution layer on the upper surface of the semiconductor substrate;

b) fixing the lower surface of the semiconductor substrate on which the upper redistribution layer and the bonding pad are formed, on the metal carrier;

c) bonding a semiconductor die to an upper portion of the bonding pad to be in electrical contact with the bonding pad;

d) forming a molding to cover the top of the semiconductor substrate fixed on the metal carrier and the semiconductor die; And

e) separating the semiconductor substrate on which the molding portion is formed from the metal carrier; And

f) forming a lower re-wiring layer on the lower surface of the semiconductor substrate

And a semiconductor package.

According to another aspect of the present invention,

a) forming a bonding pad on the conductive via, the upper redistribution layer and the upper redistribution layer on the upper surface of the semiconductor substrate;

b) bonding a semiconductor die onto the bonding pad to be in electrical contact with the bonding pad;

c) fixing the bottom surface of the semiconductor substrate to which the semiconductor die is bonded on a metal carrier;

d) forming a molding to cover the top of the semiconductor substrate fixed on the metal carrier and the semiconductor die;

e) separating the semiconductor substrate on which the molding portion is formed from the metal carrier; And

f) forming a lower re-wiring layer on the lower surface of the semiconductor substrate

And a semiconductor package.

According to the present invention, it is possible to omit the step of attaching and separating the upper portion of the interposer to the glass carrier in order to form the lower re-wiring layer after forming the upper re-wiring layer in the process of manufacturing the interposer of the semiconductor package. Accordingly, it is possible to omit additional steps necessary for attaching the glass carrier and separation from the glass carrier, as well as cost reduction due to the unused glass carrier, thereby simplifying the manufacturing process and reducing the process cost Can have excellent effect.

FIGS. 1 to 8 are sectional views showing a process for manufacturing a semiconductor package according to an embodiment of the present invention,
1 shows a step of providing a semiconductor substrate of an interposer;
FIGS. 2A-2C and FIGS. 3A-3D illustrate the steps of forming conductive vias in an interposer; FIG.
Figures 4A-4E illustrate the steps of forming an upper redistribution layer of an interposer;
Figures 5A-5E illustrate the steps of forming a bonding pad of an interposer;
Figures 6a-6d illustrate semiconductor die bonding and molding steps;
FIGS. 7A and 7B show the step of forming a bottom strand of the interposer; FIG. And
8A and 8B are views showing steps of mounting an interposer on a printed circuit board.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. In addition, in describing the present invention, the defined terms are defined in consideration of the functions of the present invention, and they may be changed depending on the intention or custom of the technician working in the field, so that the technical components of the present invention are limited It will not be understood as meaning.

A method of manufacturing a semiconductor package according to an embodiment of the present invention includes the steps of: a) forming a bonding pad on a conductive via, an upper redistribution layer, and the upper redistribution layer on a semiconductor substrate; b) bonding a semiconductor die to the semiconductor substrate so as to be electrically connected to the bonding pads; c) forming a mold over the semiconductor substrate to cover the semiconductor die; And d) forming a lower re-wiring layer on the lower surface of the semiconductor substrate.

In addition, a method of manufacturing a semiconductor package according to an embodiment of the present invention includes the steps of: e) electrically connecting the lower re-wiring layer and a printed circuit board to form a structure formed by the steps a) to b) And a step of mounting the semiconductor device on the substrate.

Each step constituting the semiconductor package manufacturing method according to one embodiment of the present invention can be implemented by the following detailed configuration and process.

(A) forming a bonding pad on the conductive via, the upper redistribution layer, and the upper redistribution layer on the upper surface of the semiconductor substrate;

FIGS. 2A through 2C and FIGS. 3A through 3D illustrate the steps of forming conductive vias in an interposer. FIGS. 4A through 4E are cross- 5A to 5E are views showing the steps of forming the bonding pads of the interposer.

Referring to Figs. 1 to 5, step a of the method of manufacturing a semiconductor package according to an embodiment of the present invention can be started from the step of providing a semiconductor substrate 11, as shown in Fig. As the semiconductor substrate 11, a silicon (Si) wafer may be employed.

Step a of the method of manufacturing a semiconductor package according to an embodiment of the present invention includes forming a conductive via as shown in Figs. 2A to 2B and Figs. 3A to 3D.

The step of forming the conductive vias may include patterning the photoresist layer 12 to form vias on the semiconductor substrate 11, as shown in Figure 2A, and patterning the photoresist layer 12, Removing the exposed regions by layer 12 to a predetermined depth to form holes H and removing the photoresist layer as shown in Figure 2C.

The step of patterning the photoresist layer 12 shown in FIG. 2A is a photolithography process well known in the art, wherein a photoresist material is applied on a semiconductor substrate 11 and then a soft bake is performed A process of exposing a photoresist layer in a soft baked state, a process of developing a post exposure bake and a portion of a photoresist layer at a position where a via is to be formed, post bake) process.

The step of forming the holes H shown in FIG. 2B is a step of forming holes in a downward direction from the upper surface of the semiconductor substrate to a predetermined depth at a position where the conductive vias of the semiconductor substrate 11 are to be formed. Can be implemented using known etching techniques. For example, the step of forming the holes H may be performed by the Deep Reactive Ion Etching (DRIE) technique.

Further, although not shown, after the step of removing the photoresist layer shown in FIG. 3C, a process for removing a scallop formed on the semiconductor substrate after the etching process performed in FIG. 3B may be further performed. 3C, a sacrificial oxide layer is formed by oxidizing the top surface of the semiconductor substrate from which the photoresist layer is removed, and a sacrificial oxide layer is removed using a buffered oxide etching (BOE) process . ≪ / RTI >

Next, the step of forming the conductive vias includes the steps of forming the insulating layer 13 for electrical insulation by oxidizing the surface of the semiconductor substrate 11 on which the holes H are formed, as shown in Fig. 3A, Forming the seed metal layers 14a and 14b and plating the metal material on the seed metal layers 14a and 14b to fill the holes H as shown in FIG. And removing the top portion of the plated metal material to expose the hole (H) region, as shown in Figure 3D, to complete the conductive via 15.

After the step of forming the insulating layer 13 through oxidation shown in FIG. 3A, a process for removing oxygen used for oxidation may be performed.

In addition, a process of dry-etching the surface of the insulating layer 13 may be performed before forming the seed metal layers 14a and 14b shown in FIG. 3B. In addition, a double layer of a titanium (Ti) layer 14a and a copper (Cu) layer 14b may be formed as a seed metal layer, but the material and the number of layers of the seed metal layer may be variously determined.

In addition, as the metal material to be filled in the hole filling step of FIG. 3C, a metal material having excellent electrical conductivity including copper (Cu) may be employed.

Step a of the method of manufacturing a semiconductor package according to an embodiment of the present invention may include forming an upper redistribution layer of the interposer as shown in Figs. 4A to 4E.

The step of forming the upper redistribution layer includes the steps of forming a dielectric layer 16 having an insulating property such that the conductive vias 15 are exposed, as shown in Fig. 4A, and forming the exposed conductive vias 15 as shown in Fig. A step of forming seed metal layers 17a and 17b on the upper surface of the seed layer 15 and the upper surface of the dielectric layer 16 and a step of forming a rewiring layer on the upper surfaces of the seed metal layers 17a and 17b Patterning the exposed photoresist layer 18 and plating the metal material to the exposed areas by the photoresist layer 18 to form an upper redistribution layer 19, , And removing the photoresist layer 18 and the seed metal layers 17a and 17b in the region except for the upper redistribution layer 19, as shown in FIG. 4E.

The step of forming the dielectric layer 16 having an insulating property to expose the conductive vias 15 shown in Fig. 4A may be performed by forming a dielectric layer on the entire surface of the semiconductor substrate 11 on which the conductive vias 15 are formed and then performing a photolithography process Similarly, a process of performing a soft bake, a process of exposing the dielectric layer in a soft baked state, a post exposure bake, and a portion of the dielectric layer in a predetermined pattern so that the conductive via is exposed Developing the dielectric layer 16, and curing the dielectric layer 16 remaining on the semiconductor substrate through a hard cure process.

The step of forming the seed metal layers 17a and 17b in Fig. 4B is similar to the step of forming the seed metal layers 14a and 14b in Fig. 3B, And a process of forming a double layer of a titanium (Ti) layer 17a and a copper (Cu) layer 17b as a seed metal layer. At this time, the material and the number of layers of the seed metal layer can be variously determined.

The step of patterning the photoresist layer 18 in Fig. 4C includes a step of applying a photoresist material on the seed metal layer 17b as a photolithography step, followed by performing a soft bake, A step of exposing a photoresist layer in a state where the upper redistribution layer is to be formed, a step of developing a post exposure bake and a part of the photoresist layer at a position where the upper redistribution layer is to be formed, . ≪ / RTI >

In addition, the step of forming the upper redistribution layer 19 of FIG. 4D includes plating a metal material having excellent electrical conductivity including copper (Cu) to form a redistribution layer 19 in contact with the conductive via 15 Step.

The step of removing the photoresist layer 18 and the seed metal layers 17a and 17b of FIG. 4E may include removing the photoresist layer 18 by a strip process, And removing the metal layers 17a and 17b by an etching process.

Step a of the method of manufacturing a semiconductor package according to an embodiment of the present invention includes forming a bonding pad on the upper redistribution layer 19 as shown in Figs. 5A to 5E to form an electrical connection with the semiconductor die can do.

The step of forming the bonding pads may include the steps of forming a dielectric layer 21 having an insulating property such that a part of the re-distribution layer 19 is exposed, as shown in Fig. 5A, A step of forming seed metal layers 22a and 22b on a part of the upper surface of the wiring layer 19 and the upper surface of the dielectric layer 21 and a step of forming bonding pads on the upper surfaces of the seed metal layers 22a and 22b Patterning the exposed photoresist layer 23 and forming a bonding pad 24 by plating a metal material on the exposed area with the photoresist layer 23, as shown in Figure 5D, And removing the photoresist layer 23 and the seed metal layers 22a and 22b in the region excluding the bonding pads 24 as shown in Fig. 5E.

The step of forming the dielectric layer 21 having an insulating property such that a part of the re-distribution layer 19 shown in FIG. 5A is exposed may be performed by forming a dielectric layer on the entire upper surface of the re-distribution layer 19 and the dielectric layer 16, , A process of performing a soft bake, a process of exposing the dielectric layer in a soft baked state, a step of exposing a part of the post exposure bake and the rewiring layer 19 Developing a part of the dielectric layer in a predetermined pattern, and hardening the dielectric layer 19 remaining on the semiconductor substrate through a hard cure process.

The step of forming the seed metal layers 22a and 22b in Fig. 5B is the same as the step of forming the seed metal layers 14a and 14b in Fig. 3B or the step of forming the seed metal layers 17a and 17b in Fig. Similarly, a process of degassing, a process of dry etching the surface of the dielectric layer 21, and a process of forming a double layer of a titanium (Ti) layer 22a and a copper (Cu) layer 22b as a seed metal layer . At this time, the material and the number of layers of the seed metal layer can be variously determined.

The step of patterning the photoresist layer 23 shown in Fig. 5C includes a step of performing a soft bake after coating a photoresist material on the seed metal layer 22b as a photolithography step, A step of exposing a photoresist layer in a state where the bonding pad is to be formed, a process of developing a post exposure bake and a part of a photoresist layer at a position where the bonding pad is to be formed, . ≪ / RTI >

In addition, the step of forming the bonding pads 24 of Fig. 5D includes the step of plating the metal material having excellent electrical conductivity including copper (Cu) to form the bonding pads 24 in contact with the re-wiring layer 19 Lt; / RTI >

The step of removing the photoresist layer 23 and the seed metal layers 22a and 22b of FIG. 5E may include a process of removing the photoresist layer 23 by a strip process, And removing the metal layers 22a and 22b by an etching process.

Step b: bonding a semiconductor die onto the semiconductor substrate to electrically connect to the bonding pads and step c: forming a mold part on the semiconductor substrate top surface to cover the semiconductor die

6A to 6D are diagrams showing semiconductor die bonding and molding steps.

The method of manufacturing a semiconductor package according to an embodiment of the present invention performs step a and then step b and step c of bonding a semiconductor die and forming a mold part as shown in Fig.

6A, the lower surface of the semiconductor substrate 11 on which the upper redistribution layer 19 and the bonding pads 24 are formed is mounted on the metal carrier 25 using the heat transfer tape 26 And bonding the semiconductor dies 27a and 27b in electrical contact with the bonding pads, as shown in Figure 6B.

6A, the lower surface of the semiconductor substrate is bonded with the metal carrier 25, which is easy to dissipate heat, in the state where the lower re-wiring layer is not formed, and the bonding step shown in FIG. 6B and the mold forming Is prepared so as to easily release the heat generated in the step. In order to further enhance the effect of heat release, a heat transferable tape 26 may be employed for attaching the metal carrier 25.

6B includes steps of bonding semiconductor dies 27a and 27b to the upper portion of the interposer by electrically contacting the terminal portions (not shown) of the semiconductor dies 27a and 27b and the bonding pads 24 to be. In the bonding step, the semiconductor dies 27a and 27b may be bonded to the bonding pads 24 using a flip chip bonding process or a thermo-compression process.

Meanwhile, in another embodiment of the present invention, the step of bonding the semiconductor dies 27a and 27b of FIG. 6B may be performed first, followed by the step of attaching the metal carrier of FIG. 6A.

Step c is then followed by the steps of forming the mold part 31 to cover the semiconductor dies 27a and 27b and the upper part of the semiconductor substrate 11 as shown in Figure 6C, And separating the semiconductor package structure with the mold part formed thereon from the metal carrier 25.

The step of forming the mold part 31 of FIG. 6C can be performed by a process of molding all the semiconductor dies on the wafer at one time by a wafer level molding process.

Further, the separating step of FIG. 6D can be performed by removing the thermally conductive tape disposed between the metal carrier and the bottom surface of the semiconductor substrate.

Step d: forming a lower re-wiring layer on the bottom surface of the semiconductor substrate

Figs. 7A and 7B show steps of forming a lower redistribution layer of the interposer. Fig.

Step d is a step of exposing the conductive via 15 to the lower surface of the semiconductor substrate 11 by partially removing the lower portion of the semiconductor substrate 11 to a predetermined depth as shown in Fig. And forming a lower re-wiring layer 34 electrically connected to the conductive vias 15 exposed on the lower surface of the semiconductor substrate 11.

7A is a step of exposing the conductive vias 15 to the bottom surface of the semiconductor substrate by removing the lower portion of the semiconductor substrate 11 to the depth where the conductive vias 15 are formed, (CMP) process to remove the bottom portion of the semiconductor substrate 11 to a predetermined depth.

The step of forming the lower redistribution layer 34 in Fig. 7B is the same as the step of forming the upper redistribution layer 19 through the steps shown in Figs. 4A to 4E and 5A, And a lower re-wiring layer 34 is formed under the substrate 11. That is, the step of forming the lower redistribution layer 34 includes the steps of forming a dielectric layer 32 having insulating properties on the lower surface of the semiconductor substrate 11 so that the conductive vias 15 are exposed, The seed metal layers 33a and 33b are formed on the bottom surface of the dielectric layer 32 and the photoresist layer (not shown) A step of forming a lower redistribution layer 34 by plating a metal material such as copper (Cu) on a region exposed by a photoresist layer (not shown) (Not shown) and the seed metal layers 33a and 33b, and then forming a dielectric layer 35 so that a part of the lower re-wiring layer 34 is exposed.

Step e: electrically connecting the lower re-wiring layer and the printed circuit board to mount the structure formed by steps a to d on the printed circuit board

8A and 8B are views showing steps of mounting an interposer on a printed circuit board.

Step e includes the steps of forming a solder ball 36 under the lower re-wiring layer 34 exposed in the passivation process of FIG. 7B and forming a solder ball 36 as shown in FIG. 8B, And mounting the structure formed by step a to step d on a printed circuit board (PCB) using the above method.

The step of forming the solder ball 36 of FIG. 8A may be performed by mounting a solder ball 36 manufactured under the lower re-wiring layer 34 exposed in the passivation process of FIG. 7B or by bumping the solder ball 36 to form a solder ball 36 .

8B includes a step of dividing the structure in which the solder balls have been formed into units of individual packages through a sawing process or the like and mounting the divided individual packages on the printed circuit board 37 .

As described above, in the method of manufacturing a semiconductor package according to an embodiment of the present invention, the upper portion of the interposer is attached to the glass carrier to form a lower re-wiring layer after forming the upper re- The step of separating can be omitted. As a result, not only the manufacturing cost can be reduced, but also the manufacturing cost can be reduced as well as the cost reduction due to the unused glass carrier, the additional process necessary for attaching the glass carrier and the additional process for separating from the glass carrier can be omitted.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited to the embodiments described, but should be determined by the scope of the following claims and equivalents thereof.

11: semiconductor substrate 12: photoresist layer
13: insulating layer 14a, 14b: seed metal layer
15: conductive via 16: dielectric layer
17a, 17b: seed metal layer 18: photoresist layer
19: upper redistribution layer 21: dielectric layer
22a, 22b: seed metal layer 23: photoresist layer
24: bonding pad 25: metal carrier
26: tape 27a, 27b: semiconductor die
31: molded part 32: dielectric layer
33a and 33b: a seed metal layer 34: a lower re-
36: solder ball 37: printed circuit board

Claims (11)

a) forming a conductive via at a depth less than a thickness of the semiconductor substrate in a downward direction from an upper surface of the semiconductor substrate, forming an upper redistribution layer on the conductive via, and forming a bonding pad on the upper redistribution layer;
b) bonding a semiconductor die to the semiconductor substrate so as to be electrically connected to the bonding pads;
c) forming a mold over the semiconductor substrate to cover the semiconductor die;
d) removing a bottom surface of the semiconductor substrate on which the mold part is formed to a depth where the conductive via is formed so that the conductive via is exposed; And
e) forming a lower re-wiring layer on the bottom surface of the semiconductor substrate so as to be electrically connected to the exposed conductive vias
≪ / RTI > The method according to claim 1,
f) electrically connecting the lower re-wiring layer and the printed circuit board, and mounting the structure formed by the step a to the step e on the printed circuit board. 2. The method according to claim 1,
Fixing the lower surface of the semiconductor substrate on which the upper redistribution layer and the bonding pad are formed on a metal carrier; And
And bonding the semiconductor die to an upper portion of the bonding pad so as to be in electrical contact with the bonding pad. 2. The method according to claim 1,
Bonding a semiconductor die to an upper portion of the bonding pad in electrical contact with the bonding pad; And
And fixing the bottom surface of the semiconductor substrate to which the semiconductor die is bonded, on a metal carrier. 5. The method of claim 3 or 4,
And attaching the metal carrier and the lower surface of the semiconductor substrate to each other using a heat transfer tape. 5. The method according to claim 3 or 4,
Forming an upper portion of the semiconductor substrate fixed on the metal carrier and a molding portion to cover the semiconductor die; And
And separating the semiconductor substrate with the molding portion from the metal carrier. delete delete delete delete delete
KR1020140004142A 2014-01-13 2014-01-13 Method for manufacturing led package KR101579434B1 (en)

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CN107919342B (en) * 2016-10-09 2020-12-04 中芯国际集成电路制造(上海)有限公司 Method for forming redistribution bonding pad, semiconductor device and electronic device

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Publication number Priority date Publication date Assignee Title
KR100421033B1 (en) * 2000-11-22 2004-03-04 페어차일드코리아반도체 주식회사 Power package with high thermal transferability

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KR20100069007A (en) * 2008-12-15 2010-06-24 하나 마이크론(주) Semiconductor package and fabricating method thereof
KR101190920B1 (en) * 2010-10-18 2012-10-12 하나 마이크론(주) Stacked semiconductor package and method of manufacturing thereof
US8741691B2 (en) * 2012-04-20 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating three dimensional integrated circuit

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Publication number Priority date Publication date Assignee Title
KR100421033B1 (en) * 2000-11-22 2004-03-04 페어차일드코리아반도체 주식회사 Power package with high thermal transferability

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