KR101573318B1 - Apparatus for supplying Electrolyze Ion Water - Google Patents

Abstract

The present invention relates to a cleaning method for cleaning a semiconductor wafer or an LCD (Liquid Crystal Display) substrate, which satisfies a high efficiency cleaning effect, a high productivity maintenance, a low maintenance cost (CoO) and an environmentally friendly factor, And electrolytic ionized water for filtering the electrolytic ionized water stored in the buffer tank, which is generated in the electrolytic bath of the semiconductor cleaning apparatus, for effectively removing contaminants that have a serious effect on the characteristics and yield of the semiconductor device while preventing damage, The particles and the metal ions included in the electrolytic ionized water can be removed by the particle filter 616 and the metal ion filter 617 so that the washing performance of the electrolytic ionized water is improved and the operation of the valve 618 The bubbles in the particle filter 616 can be removed and the metal ion filter 617 can improve the performance of the particle filter 616 and the metal ion filter 617 and improve the performance of the particle filter 616 or the metal ion filter 617 by the valves 618, The pressure inside the pipe can be discharged to the outside, so that the filter can be easily replaced.

Description

Technical Field [0001] The present invention relates to an electrolytic ionized water supply apparatus for a semiconductor cleaning apparatus,

The present invention relates to a semiconductor cleaning apparatus and, more particularly, to a cleaning apparatus for cleaning a semiconductor wafer or an LCD (Liquid Crystal Display) substrate, which satisfies a high efficiency cleaning effect, high productivity maintenance, low maintenance cost (CoO) The electrolytic ionized water stored in the buffer tank, which is generated in the electrolytic bath and is stored in the buffer tank, is filtered out of the constitution of the semiconductor cleaning apparatus for effectively removing contaminants that have a serious effect on the characteristics and yield of the semiconductor device while preventing re-contamination and damage due to electrostatic charges And an electrolytic ionized water supply device for supplying the electrolytic ionized water to the object to be cleaned.

In general, wafer cleaning processes in semiconductor manufacturing processes account for about 30% of the entire semiconductor manufacturing process. As miniaturization and high integration of semiconductor devices progress rapidly, the effect of cleaning process on the yield in the entire semiconductor manufacturing process This is increasing day by day. The importance of the semiconductor cleaning technology has been greatly emphasized. Therefore, in order to cope with the semiconductor cleaning technology and apparatus, development of a cleaning technology and apparatus capable of achieving a cleaning efficiency of a high level and a high function is urgently required.

All wafer processes performed in the semiconductor manufacturing process are the source of contaminants, which directly affect the performance and yield of semiconductor devices. The contaminants on the surface of the wafer after each process are exponentially increased, and the yield of semiconductor devices is drastically reduced by the contaminants.

In fact, the wafer cleaning process is performed before and / or after each process such as Lithography, Chemical Mechanical Polishing (CMP) process, etc., and its main purpose is to remove exponentially increasing contaminants. However, in reality, it is impossible to completely remove contaminants after cleaning process. Research institutes and equipment companies in Korea and abroad are developing more advanced wet cleaning equipment and chemical. However, existing cleaning equipment has a low efficiency cleaning effect , Low productivity, high CoO, and environmental pollution.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a cleaning method and a cleaning method for cleaning a semiconductor wafer or an LCD (Liquid Crystal Display) The present invention also provides a semiconductor cleaning apparatus for effectively removing contaminants that have a serious effect on the characteristics and yield of a semiconductor device while preventing re-contamination and damage due to electrostatic charges, And an electrolytic ionized water supply device for supplying electrolytic ionized water generated in the electrolytic bath and stored in the buffer tank to the object to be cleaned.

According to an aspect of the present invention, there is provided a semiconductor cleaning apparatus including: a deionized water supply unit for supplying ultrapure water; An electrolyte supply part for supplying an electrolyte; An electrolyte / ultrapure water mixing unit for mixing the ultrapure water supplied from the ultrapure water supply unit and the electrolyte supplied from the electrolyte supply unit at a predetermined ratio; An electrolytic bath for producing electrolytic ionized water based on the electrolytic solution mixed and supplied from the electrolytic / ultrapure water mixing unit and the ultrapure water supplied from the ultrapure water supply unit; A buffer tank for storing the electrolytic ion water generated and discharged from the electrolytic bath; A PH measuring unit for measuring the pH of the electrolytic ionized water stored in the buffer tank; And an electrolytic ionized water supply unit for supplying the electrolytic ionized water stored in the buffer tank to the object to be cleaned.

According to another aspect of the present invention, there is provided an electrolytic ionized water supply device for a semiconductor cleaning apparatus, comprising: an electrolytic ionized water supply device for supplying electrolytic ionized water generated in an electrolytic bath of a semiconductor cleaning apparatus and stored in a buffer tank, An electrolytic ionized water supply pump for pumping electrolytic ionized water in the buffer tank to supply the electrolytic ionized water to the outside; A particle filter for removing particles contained in the electrolytic ion water supplied from the supply pump; A metal ion filter for removing metal ions contained in the electrolytic ion water passing through the pump filter; A manual valve for removing air bubbles in the particle filter or venting the air when replacing the particle filter; A manual valve for discharging fluid in the particle filter; A manual valve for sampling the electrolytic ion water passing through the particle filter; A manual valve for discharging fluid in the metal ion filter; A manual valve for removing bubbles in the metal ion filter or for venting the metal ion filter when the filter is replaced; And a manual valve for manually controlling the supply of electrolytic ionized water passing through the metal ion filter to the object to be cleaned.

As described above, the semiconductor cleaning apparatus according to one aspect of the present invention is effective in cleaning a semiconductor wafer or an LCD (Liquid Crystal Display) substrate, cleaning efficiency with high efficiency, maintaining high productivity, low maintenance cost (CoO) Elements, and contaminants that have a serious effect on the characteristics and yield of semiconductor devices can be effectively removed while preventing re-contamination and damage due to electrostatic charges.

According to another aspect of the present invention, there is provided an apparatus for supplying electrolytic ionized water to a semiconductor cleaning apparatus, the electrolytic ionized water supply apparatus comprising: It is possible to improve the cleaning performance and particularly to remove the bubbles in each filter, thereby improving the performance of the filter, and also to discharge the pressure in the pipe to the outside during the replacement of the filter.

1 is a configuration diagram of a semiconductor cleaning apparatus according to an embodiment of the present invention;
FIG. 2 is a view for explaining the basic structure of the electrolytic bath of FIG. 1 and the principle of electrolytic ionized water generation;
FIG. 3 is a view for explaining a basic flow path of electrolytes and electrolytic ionized water in the electrolytic bath of FIG. 1,
Fig. 4 is a configuration diagram of the electrolytic bath of Fig. 1,
5 is a view for explaining a partition wall of the buffer tank of FIG. 1,
Fig. 6 is a configuration diagram of the electrolytic ionized water supply unit of Fig. 1,
7 is a configuration diagram of an electrolytic ionized water supply device of a semiconductor cleaning apparatus according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals are used to denote like elements in the drawings, even if they are shown in different drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

1 is a block diagram of a semiconductor cleaning apparatus according to an embodiment of the present invention. As shown in the drawing, a deionized water supply unit 100, an electrolyte supply unit 200, an electrolyte / ultra pure water mixing unit 300, An electrolytic bath 400, a buffer tank 500, an electrolytic ionized water supply unit 600, a pH measuring unit 700, and a control unit 800.

The ultrapure water supply unit 100 is for supplying ultrapure water to the cathode chamber and the anode chamber of the electrolytic bath 400, the electrolytic / ultrapure water mixing unit 300, and the electrolytic ionized water supply unit 600.

The electrolyte supplying part 200 supplies the electrolyte to the electrolyte / ultrapure water mixing part 300, and the electrolyte may use ammonia water (NH4OH).

The electrolyte / ultrapure water mixing unit 300 mixes the ultrapure water supplied from the ultrapure water supply unit 100 and the electrolyte supplied from the electrolyte supply unit 200 at a predetermined ratio and supplies the mixture to the intermediate chamber of the electrolytic bath 400. The electrolyte / ultrapure water mixing unit 300 divides the mixed electrolyte solution into a plurality of electrolytic baths 400 and supplies the electrolytic solution to the intermediate chamber of each electrolytic bath 400.

The electrolytic bath 400 is for generating electrolytically ionized water by electrolyzing electrolytic solution supplied from the electrolytic / ultrapure water mixing unit 300 and ultrapure water supplied from the ultrapure water supply unit 100, The electrolytic bath of the three-bath type according to the present embodiment will be described in detail with reference to FIG. 2 to FIG. 4 as follows.

FIG. 2 is a view for explaining the basic structure of a 3-bath electrolyzer and the principle of generating electrolyzed water, and FIG. 3 is a view for explaining a basic structure of a 3-bath electrolyzer and a 3-bath electrolyzer Fig. 3 is a view for explaining the basic circulation system of the electrolytic water and the electrolytic water of Fig.

The three-bath electrolytic cell is an electrolytic device in which raw water as ultrapure water is supplied to an electrolytic cell and passed through a direct current type as shown in FIG. The dotted line is an electrolytic circulation system for facilitating electrolysis. The electrolytes introduced into the intermediate chamber are electrolyzed and moved to both chambers, thereby producing acidic oxidized water and alkaline reduced water in both chambers. In this case, acidic oxidized water is generated at the cathode side and alkaline reducing water is generated at the cathode side. When NaCl is used as the electrolyte, acidic oxidized water has a strong sterilizing power. Alkaline reduced water has strong washing power and strong pH If you have strong sterilizing power. Also, the properties of electrolytic water (or electrolytic ionic water) generated depending on the type of the electrolyte added to the intermediate chamber are different, and the specifications of the electrolytic system vary depending on the type of the electrolyte to be added.

One of the biggest differences from conventional electrolysis technology is that electrolytes such as salt are not directly added to the raw water. The electrolyte is supplied only to the intermediate chamber. When the electrolysis is started, the electrolyte ions in the intermediate chamber move to the anode chamber or the cathode chamber as shown in the electrolytic diagram shown in FIG. 2 in proportion to the electrolytic current. That is, it is possible to move the lowest amount of ions necessary and to reduce the ion concentration in the electrolytic water to a very small amount. By virtue of these properties, it is possible to produce highly purified electrolyzed water with a high functionality even with a very small amount of electrolyte consumption. Another big difference is that various electrolytes of salt form can be used to produce various kinds of electrolytic ionized water.

FIG. 4 is a block diagram of the three-bath electrolyzer 400 of FIG. 1. As shown in the drawing, a first chamber 410 formed in the middle, a second chamber 420 formed on both sides of the first chamber 410 And a third chamber 430. As shown in FIG.

The first chamber 410 has a first space 410a sealed from the outside for storing and circulating the electrolyte and at least both side walls are formed of the first ion exchange membrane 411 and the second ion exchange membrane 412 The inlet 413 and the outlet 414 are connected to each other by a circulation pipe (not shown) so that the electrolyte can flow into the electrolytic cell As shown in FIG.

The second chamber 420 has a second space 420a that is sealed from the outside to store ultrapure water or pass through the first chamber 410. The first chamber 410 is provided with a first ion exchange membrane 411 on one side of the first chamber 410, And a first electrode 423 is formed in the second space 420a so that the first electrode 423 and the second electrode 423 are formed in the second space 420a, Respectively.

The third chamber 330 has a third space 430a which is sealed from the outside in order to store ultrapure water or pass through the first chamber 410. The second chamber 420 is provided with a second ion exchange membrane 412 on the other side of the first chamber 410, And a water inlet 431 and a water outlet 432 are formed in the third space 430a and the second electrode 433 is formed in the third space 430a. Respectively.

Therefore, in the present embodiment, the first space 410a of the first chamber 410 and the second space 420a of the second chamber 420 are adjacent to each other with the first ion exchange membrane 411 as a diaphragm as a boundary The first space 410a of the first chamber 410 and the third space 430a of the third chamber 430 are adjacent to each other with the boundary of the second ion exchange membrane 412 as the diaphragm.

In this embodiment, the first electrode 423 has one of positive and negative polarities, and the second electrode 433 has a polarity opposite to that of the first electrode 423, The first electrode 423 is a negative electrode having a negative polarity and the second electrode 433 is a positive electrode having a positive polarity.

1, the buffer tank 500 stores electrolytic ionized water generated and discharged from the electrolytic bath 400. In this embodiment, in particular, alkaline water (alkaline aqueous solution) among the electrolytic ionized water containing alkaline water and acidic water, Reduction number).

5 (a), the buffer tank 500 is provided with a sweep gas inlet port (not shown) for discharging gas (H2, O2, O3) generated during electrolytic ionized water generation to the outside, A partition wall 520 for dispersing the sweep gas introduced through the sweep gas inlet 511 into the buffer tank 500 and injecting the sweep gas into the buffer tank 500 may be installed in the interior of the buffer tank 500 N2 gas can be used as the sweep gas. That is, the buffer tank 500 according to the present embodiment includes a tank body having a sealed storage space therein, a sweep gas inlet port 511 formed at one side of the tank body and a sweep gas inlet port 511 formed at the other side of the tank body, 512 and sweep gas introduced into the storage space of the tank body through the sweep gas inlet 511 is dispersed into the storage space so that one side of the sweep gas inlet 511 and one side of the sweep gas inlet 511 And a partition 520 which is opposed to and is supported to be supported on at least one side of the tank body.

The partition 520 according to the present embodiment includes a bottom wall portion 521 formed to face the inner wall of the buffer tank 500 in which the sweep gas inlet 511 is formed and a side wall portion 522 formed on the side surface of the bottom wall portion 521 But the present invention is not limited to such a structure. For example, various modifications such as a structure in which only the bottom wall portion 521 is provided and the side wall portion 522 is not provided, a structure in which at least one side of the side wall portion 522 is opened It will be possible.

FIG. 5 (b) shows a conventional buffer tank. When N2 gas is injected into the buffer tank as sweep gas, the injected N2 gas is directed into the buffer tank to hit the surface of the stored electrolytic ion water, The level of the stored electrolytic ionized water can not be measured. Further, there is a disadvantage that the N2 gas or the generated gas is not exhausted through the exhaust port but flows backward through the N2 syringe inlet.

In contrast, as shown in FIG. 5A, the buffer tank 500 according to the present embodiment is configured such that the sweep gas injected through the sweep gas inlet 511 due to the partition 520 is introduced into the buffer tank 500 So that electrolytic ionized water can be prevented from being swirled and the back flow of gas to the inlet 511 can be prevented.

1, the electrolytic ionized water supply unit 600 is for supplying electrolytic ionized water stored in the buffer tank 500 to a cleaning object such as a semiconductor wafer W, an LCD substrate, or the like. As shown in FIG. 6, A first supplying part 610 for supplying the alkaline reducing water supplied from the electrolytic bath 500 to the cleaning object W and a second supplying part 610 for supplying the acidic oxidizing water generated in the anode chamber of the three bath electrolytic bath 400 to the cleaning / And a second feeder 620 for the second feeder.

The pH measurement unit 700 measures the pH of the electrolytic ionized water stored in the buffer tank 500 and obtains a predetermined amount of electrolytic ionized water from the buffer tank 500 to measure the pH of the electrolytic ionized water, Hour).

The control unit 800 controls the opening and closing operations of the valves V1 to V9 installed on the respective flow paths and controls the opening and closing operations of the valves V1 to V9, Ultrapure water mixing unit 300 based on the pH value measured by the pH measuring unit 700. The mixing ratio between the ultra pure water and the electrolyte mixed in the electrolyte /

The valve V1 is installed in the flow path between the ultrapure water supply part 100 and the mixing part 300. The valve V2 is installed in the flow path between the electrolyte supply part 200 and the mixing part 300. The valve V3 is connected to the ultrapure water The valve V4 is installed in the flow path between the mixing part 300 and the electrolytic bath 400 and the valve V5 is installed in the flow path between the electrolytic bath 400 and the electrolytic water supply part The valve V6 is installed in the flow path between the buffer tank 500 and the electrolytic ionized water supply part 600 and the valve V7 is provided in the flow path between the electrolytic ionized water supply part 600 and the spraying nozzle 601, And the valve V8 is installed in the flow path between the buffer tank 500 and the pH measurement unit 700 and the valve V9 is installed in the flow path between the ultra pure water supply unit 100 and the electrolytic ionized water supply unit 600, Each of the valves V1 to V9 may be opened or closed under the control of the control unit 800 or manually opened or closed by a user.

7 shows an example of the detailed configuration of the electrolytic ionized water supply device of the semiconductor cleaning apparatus according to the embodiment of the present invention, the electrolytic ionized water supply part 600 of FIG. 1 and the first supply part 610 of FIG. 6 The electrolytic ionized water supply pump 612, the pressure gauge 613, the digital flow meter 615, the particle filter 616, the metal ion filter 617, the drain manifold 623, And various valves 611, 614, 618 to 622, and 624.

The valve 611 is for controlling the electrolytic ionized water stored in the buffer tank 500 to be automatically drained to the outside of the semiconductor cleaning apparatus. For example, the valve 611 may be controlled by the control unit 800, Lt; / RTI >

The electrolytic ionized water supply pump 612 pumps the electrolytic ionized water stored in the buffer tank 500 so that the electrolytic ionized water can be supplied to the outside.

The pressure gauge 613 senses the pressure of the electrolytic ion water supplied from the buffer tank 500 by the supply pump 612 to the outside.

The digital flow meter 615 senses and displays the flow rate of the electrolytic ion water supplied from the buffer tank 500 by the supply pump 612 to the outside.

Particle filter 616 filters the electrolytic ion water supplied from the buffer tank 500 by the supply pump 612 to the outside to remove contaminants such as particles contained in the electrolytic ion water will be.

The metal ion filter 617 removes metal ions contained in the electrolytic ionized water by filtering the electrolytic ion water that is supplied from the buffer tank 500 and supplied to the outside by the supply pump 612, The metal ions included in the electrolytic ionized water passing through the filter 616 can be removed.

The drain manifold 623 represents a drain buffer tank for collecting and discharging the wastewater generated from the semiconductor cleaning apparatus.

The valve 611 is an automatic valve for draining the electrolytic ionized water in the buffer tank 500 to the outside of the semiconductor cleaning apparatus, and can be opened / closed under the control of the control unit 800 of FIG.

The valve 614 is provided between the pressure gauge 613 and the digital flow meter 615 to automatically control the flow rate of the electrolytic ion water supplied from the buffer tank 500 to the outside by the supply pump 612 And can be automatically controlled under the control of the control unit 800 of FIG.

The valve 618 represents a manual valve for removing bubbles in the particle filter 616 or for venting the pressure in the relevant piping when the particle filter 616 is replaced and includes a particle filter 616 and a drain manifold 623, respectively.

The valve 619 represents a manual valve for discharging the fluid in the particle filter 616 and is disposed between the particle filter 616 and the drain manifold 623.

Valve 620 represents a manual valve for sampling electrolyzed ion water through particle filter 616.

The valve 621 represents a manual valve for discharging the fluid in the metal ion filter 617 and is disposed between the metal ion filter 616 and the drain manifold 623.

The valve 622 represents a manual valve for removing bubbles in the metal ion filter 617 or venting the pressure in the corresponding pipe when the metal ion filter 617 is replaced. Drain manifold 623, as shown in FIG.

The valve 624 represents a manual valve for manually controlling the electrolytic ionized water that has passed through the metal ion filter 617 to be supplied to the object to be cleaned.

7, when the electrolytic ion water generated in the electrolytic bath 400 and stored in the buffer tank 500 is supplied to the object to be cleaned by the particle filter 616 and the metal ion filter 617 The particles and the metal ions contained in the electrolytic ionized water are removed, thereby improving the cleaning performance of the electrolytic ionized water.

It is also possible to remove the air bubbles in the particle filter 616 by the valve 618 and remove the air bubbles in the metal ion filter 617 by the valve 622 so that the particle filter 616 and the metal ion filter 617 ) Can be improved.

When the particle filter 616 or the metal ion filter 617 is replaced by the valves 618 and 622, the pressure in the pipe can be discharged to the outside, so that the filter can be easily replaced.

Next, an example of the operation of the semiconductor cleaning apparatus according to the embodiment of FIG. 1 will be described.

The ultrapure water supply unit 100 supplies ultrapure water to the mixing unit 300 and the anode and cathode compartments of the electrolytic bath 400 and the electrolyte supply unit 200 supplies the ammonia water as the electrolyte to the mixing unit 300.

The mixing unit 300 mixes the ultrapure water supplied from the ultrapure water supply unit 100 and the ammonia water supplied from the electrolyte supply unit 200 at a predetermined ratio and supplies the mixed water to the intermediate chamber of the electrolytic bath 400. When a plurality of electrolytic baths 400 are installed The mixed electrolytic solution is branched at a predetermined ratio and supplied to the intermediate chamber of each electrolytic bath 400.

The electrolytic bath 400 generates electrolytic decomposition operation to produce acidic oxidized water in the anode compartment and alkaline reduced water in the cathode compartment. The buffer tank 500 stores the alkaline reduced water discharged from the cathode compartment of the electrolytic bath 400, The pH measuring unit 700 obtains the alkaline reducing water stored in the buffer tank 500 and measures the pH thereof and provides the measured pH data to the control unit 800. The control unit 800 controls the pH measuring unit 700, For example, the degree of opening / closing of the valves V1 and V2 based on the pH data input from the user or from the user, so that the mixing ratio between the ultra pure water and the ammonia water mixed in the mixing part 300 can be controlled.

The first supply part 610 of the electrolytic ionized water supply part 600 injects the alkaline reduced water supplied from the buffer tank 500 onto the wafer W on the spin chuck 10 through the injection nozzle 601. [

When the first supply part 610 of the electrolytic ionized water supply part 600 of the semiconductor cleaning device of FIG. 1 is provided as in the electrolytic ionized water supply device of FIG. 7, the particle filter 616 and the metal ion filter 617, It is possible to remove the bubbles in the particle filter 616 by the operation of the valve 618 and to remove the bubbles in the particle filter 616 by the operation of the valve 618, It is possible to improve the performance of the particle filter 616 and the metal ion filter 617 because the bubbles in the metal ion filter 617 can be removed by the operation of the particle filter 616 or the metal ion filter 617, When the filter 617 is replaced, the pressure in the pipe can be discharged to the outside, so that the filter can be easily replaced.

The second supply unit 620 of the electrolytic ionized water supply unit 600 may supply ultrapure water supplied from the ultrapure water supply unit 100 to the injection nozzle 601 or another spray nozzle (Not shown) to the wafer W or another object, and as another example, acidic oxidized water supplied from the anode chamber of the electrolytic bath 400 may be sprayed through the spray nozzle 601 or another spray nozzle (not shown) As another example, the acidic oxidation water supplied from the second supply unit 620 of the electrolytic ionized water supply unit 600 can be used for cleaning the buffer tank 500.

The spin chuck 10 is mounted on the upper end of the wafer W so that the wafer W is chucked by vacuum and is rotatable around a rotary shaft 11 integrally provided at a lower portion thereof. (Not shown), which is the same as the conventional art, and thus a detailed description thereof will be omitted.

It is possible to prevent the electrostatic charge from accumulating on the wafer W by causing the hydrogen ions contained in the alkaline reducing water to absorb and dissipate the static electricity by spraying the alkaline reducing water as the cleaning liquid to the wafer W. Further, And it is possible to prevent re-adhesion of foreign matter.

If the surface of the wafer W is charged with ions due to a by-product of the process, the wafer W is collected in the center by high-speed rotation of the wafer W, It is preferable to inject the alkaline reducing water to the central portion of the wafer W when spraying.

The supply of the alkaline reducing water from the first supply part 610 of the electrolytic ionized water supply part 600 is stopped by the operation of the valve V6 and the ultra pure water is supplied from the second supply part 610 So that ultrapure water is jetted onto the wafer W, so that the particles can be removed from the wafer W.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: ultrapure water supplier
200: electrolyte supply part
300: electrolyte / ultrapure water mixing part (or abbreviated as 'mixing part')
400: electrolytic bath
500: Buffer tank
600: electrolytic ionized water supply part
612: electrolytic ionized water supply pump
613: Pressure gauge
615: Digital flow meter
616: Particle filter
617: Metal ion filter
623: drain manifold
611, 614, 618 to 622, 624: Various valves of the electrolytic ionized water supply device
700: PH measuring unit
800:

Claims (1)

An electrolytic ionized water supply device for supplying electrolytic ion water generated in an electrolytic bath of a semiconductor cleaning device and stored in a buffer tank to a cleaning object,
An electrolytic ionized water supply pump for pumping electrolytic ionized water in the buffer tank to supply the electrolytic ionized water to the outside;
A particle filter for removing particles contained in the electrolytic ion water supplied from the supply pump;
A metal ion filter for removing metal ions contained in the electrolytic ion water passing through the particle filter;
A valve for removing bubbles in the particle filter or venting the particle filter when the particle filter is replaced;
A valve for discharging fluid in the particle filter;
A valve for sampling electrolytic ion water passing through the particle filter;
A valve for discharging fluid in the metal ion filter;
A valve for removing bubbles in the metal ion filter or for venting the metal ion filter when the filter is replaced; And
And a valve for manually controlling the electrolytic ionized water passing through the metal ion filter to be supplied to the object to be cleaned,
The buffer tank includes a tank body having a sealed storage space therein, a sweep gas inlet port and a generated gas outlet port formed at one side and the other side of the upper side of the tank body, and a storage tank for storing the tank body through the sweep gas inlet port. And a partition wall disposed on the at least one surface of the tank body so as to be opposed to the sweep gas inlet in the storage space so that the sweep gas injected into the space is dispersed and injected into the storage space. An electrolytic ionized water supply device for a cleaning device.

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