KR101563329B1 - Heat Dissipation Power Device of High Power Using Heat Pipe - Google Patents

Abstract

A high power power dissipation device using a heat pipe includes a substrate on which a plurality of charge power semiconductor elements and a plurality of discharge power semiconductor elements are arranged in parallel and in which a circuit pattern is formed; And one surface of a base portion, which is a flat plate of a metal plate, is coupled to a surface of each of the power semiconductor elements of the substrate, and one side of the base portion is connected to a closed portion of a heat pipe of ' And a plurality of heat dissipation heat sinks stacked in the longitudinal direction on the at least one heat pipe.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heat dissipation device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a high-power power dissipation device using a heat pipe, and more particularly, to a power supply circuit with high heat generation and a high-power power dissipation device using a heat pipe that cools heat generated during a charging operation and a discharging operation in a battery charge- .

A power supply circuit of high output generates heat due to various power loss, and there is a problem that the power supply circuit is damaged and power loss occurs due to such heat.

In addition, the rechargeable battery is widely used as an energy source for mobile devices, and has been attracting attention as a major power source for electric vehicles as a solution to solve air pollution problems of gasoline vehicles and diesel vehicles using fossil fuels.

Hybrid vehicles are equipped with a battery in a power unit using a conventional gasoline engine, and the battery is used as an auxiliary power source.

The high-capacity battery charge / discharge circuit requires a high-voltage charge / discharge module and a high-output power supply circuit that can rapidly charge or discharge the battery using an external power supply.

Although the charging and discharging module is developed as an apparatus including an electric circuit, it can be seen that the power loss is very sensitive due to a rapid increase of the output capacity.

Since the power loss is related to the amount of heat generated by the heating element mounted inside the charging and discharging module, the reliability of the charging and discharging module is degraded if the heating element is not sufficiently cooled.

In order to reduce the heat loss generated by the charging / discharging module, it is necessary to design a heat dissipation device capable of cooling the heating element mounted on the charging / discharging module as much as possible for such high-speed and large-capacity charging / discharging.

The conventional heat dissipation structure of the battery charge / discharge circuit is a housing-type casing in which a power conversion electronic component connected with an electric circuit is built in, and a heat sink is constituted.

The conventional battery charge / discharge circuit uses a heat sink as an enclosure for heat dissipation, so that the space for cooling can not be increased. Also, since a fan is required to fit the size of the heat sink, the noise is very large.

Also, since the battery does not perform charging and discharging at the same time, the temperature of the heat sink does not rise evenly during charging and discharging, and the temperature of the heat sink fluctuates.

Such a conventional battery charge / discharge circuit has an inefficient heat dissipation structure, which results in an inefficiency in comparison with the size of the heat sink, and the stability and durability of the battery are deteriorated by heat generation of the battery.

It is an object of the present invention to provide a high power power dissipation device using a heat pipe that cools heat generated during a charging operation and a discharging operation in a power supply circuit and a battery charge / .

According to an aspect of the present invention, there is provided a high power power dissipating device using a heat pipe,

A substrate on which a circuit pattern including at least one power semiconductor element is formed; And

And a heat dissipation heat sink in which a base portion, which is a flat plate of a metal, is coupled to a surface of each of the power semiconductor elements of the substrate, and a base portion and a portion of the heat pipe are coupled.

A high power power dissipating device using a heat pipe according to an aspect of the present invention includes:

A substrate on which a plurality of charge power semiconductor elements and a plurality of discharge power semiconductor elements are arranged in parallel and in which a circuit pattern is formed; And

One surface of a base portion, which is a flat plate of a metal plate, is connected to the surface of each of the power semiconductor elements of the substrate, and one side of the base portion is covered with a closed portion of a heat pipe of ' And a plurality of heat dissipation heat sinks stacked in the longitudinal direction on the at least one heat pipe, the aluminum heat dissipation fins being plates of flat plates.

According to the above-described structure, the heat pipe of the high power power dissipation device can be formed in a heat dissipating structure to save space, increase cooling efficiency, and reduce noise and weight.

The present invention has an effect of sharing a heat pipe with a heat dissipating structure in a high power power heat dissipating device, thereby increasing the cooling efficiency because the temperature deviation during charging and discharging is small.

1 and 2 are perspective views illustrating the construction of a high-power power dissipating device using a heat pipe according to an embodiment of the present invention.
FIG. 3 and FIG. 4 are exploded perspective views showing a configuration of a high-power power dissipating device using a heat pipe according to an embodiment of the present invention.
5 is a side view of a high-power power dissipating device using a heat pipe according to an embodiment of the present invention.
FIG. 6 is an enlarged cross-sectional side view of a portion of a high-power power dissipating device using a heat pipe according to an embodiment of the present invention.
FIG. 7 is a conceptual diagram illustrating a charging operation and a discharging operation of a high power power dissipation device using a heat pipe according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

1 and 2 are perspective views illustrating the construction of a high-power power dissipating device using a heat pipe according to an embodiment of the present invention. FIG. 3 and FIG. 4 are views showing a structure of a high- FIG. 5 is a view illustrating a side view of a high-power power dissipating device using a heat pipe according to an embodiment of the present invention. FIG. 6 is a cross-sectional view illustrating a structure of a high- FIG. 7 is a conceptual diagram illustrating a charging operation and a discharging operation of a high-power power dissipater using a heat pipe according to an embodiment of the present invention.

A high power power dissipation device using a heat pipe according to an embodiment of the present invention includes a substrate 100 that is a circuit for performing charging and discharging and a circuit board 100 for radiating heat of the circuit components of the substrate 100 on one surface of the substrate 100. [ The heat dissipation heat sink 200 is mounted.

A plurality of power semiconductor devices 110 and 120 are arranged on one surface of a substrate 100. A plurality of charge power semiconductor devices 110 and a plurality of discharge power semiconductor devices 120 are arranged side by side in parallel, The component is mounted.

Circuit parts such as a shunt resistor 130, a copper plate 140, a source bus bar 150, and a drain bus bar are mounted on the other surface of the substrate 100.

The substrate 100 includes a plurality of power semiconductor devices 110 and a heat dissipation heat sink 200 for cooling the heat generated from the plurality of discharge power semiconductor devices 120 during charging and discharging, In the direction in which they are disposed.

The charging power semiconductor element 110 and the discharging power semiconductor element 120 are field effect transistors (FETs), the charging power semiconductor element 110 is an N-type FET and the discharging power semiconductor element 120 is a field- Uses a P-type FET.

The heat dissipation heat sink 200 is formed by stacking a plurality of aluminum heat dissipation fins 210 which are flat plates and passing heat pipes 220 in a vertical direction through heat pipes 220 in a stacked aluminum heat dissipation fins 210, And a blowing fan 230 is installed on one side of the blowing fan 230. Here, the aluminum heat dissipating fin 210 is made of aluminum and has a thin plate shape.

The heat pipe 220 includes a heat pipe main body 222 in the longitudinal direction which is a portion penetrating a plurality of aluminum heat dissipating fins 210 stacked in the vertical direction, a heat pipe connecting portion 222 which is exposed through the outside of the aluminum heat dissipating fin 210 224).

In the heat-dissipating heat sink 200 of the embodiment of the present invention, eight heat pipes 220 of '∪' shape are inserted into a plurality of aluminum heat dissipating fins 210 stacked in the longitudinal direction at a predetermined distance interval, (224) is exposed to the outside of the aluminum heat dissipating fin (210).

Each heat pipe connection portion 224 is a closed portion of the heat pipe 220 and is composed of a first bent region on both sides and a second linear region.

The base portion 240 is a flat plate having a predetermined thickness of metal and has a length equal to or longer than the combined length of the plurality of heat pipe connecting portions 224. [

Each of the heat pipe connection portions 224 penetrates through one side of the base portion 240 so that the second region is inserted into the base portion 240 and the first bent portions of both sides are exposed to the outside of the base 240 do.

The base portion 240 has eight through holes penetrating the side surface in the form of the first base portion 242 and the second base portion 244 combined and each heat pipe connection portion 224 is formed in eight through holes And is joined by lead soldering.

The assembling process of the high-power power dissipating device using the heat pipe of the embodiment of the present invention will be described with reference to FIGS. 1 to 6. FIG.

The base portion 240 of the heat dissipation heat sink 200 attaches heat transfer pads for insulation and heat transfer to the surface opposite to the direction in which the aluminum heat dissipation fins 210 are stacked. Here, the heat transfer pad can be formed in various forms such as thermal grease and thermal epoxy as heat transfer coating agents.

The substrate 100 may be manufactured by mounting a circuit component including the charge power semiconductor element 110 and the discharge power semiconductor element 120 on the surface of the base member 240 after the power semiconductor elements 110 and 120 are formed, To face each other.

The base portion 240 of the heat sink 200 is mounted with the power semiconductor element fixing member 160 in the longitudinal direction on the surface opposite to the direction in which the heat transfer pad is attached and the plurality of copper plates 140 The source bus bar 150 is brought into close contact with the portion where the source bus bar 150 is formed.

A plurality of bolt insertion holes 102 and 172 are formed in the source bus bar 150, the substrate 100, the base portion 240, and the power semiconductor element fixing member 160 to insert the bolts 170.

The positions of the respective bolt insertion holes 102 and 172 are closely contacted and matched in the order of the source bus bar 150, the substrate 100, the base portion 240, and the power semiconductor element fixing member 160 in this order, And is integrally coupled through a bolt (170) in a threaded manner.

The power semiconductor element fixing member 160 and the source bus bar 150 are made of aluminum metal and are formed in the longitudinal direction by the length of the base portion 240.

A shunt resistor 130, a copper plate 140, and a source bus bar 150 are mounted on the other surface of the substrate 100.

As shown in FIG. 4, a plurality of shunt resistors 130 provide a constant current control circuit with a voltage value sensed to regulate the gate voltage of the FETs 110 and 120.

One shunt resistor 130 is used for each of the two charging power semiconductor elements 110 and the discharge power semiconductor elements 120. [

The reason is that the shunt resistor 130 can be shared because the charging operation and the discharging operation are not performed at the same time.

As shown in FIG. 4, a plurality of copper plates 140 are for sharing the shunt resistor 130 by connecting the charge power semiconductor element 110 and the source portion of the discharge power semiconductor element 120 to each other.

The reason for exposing the copper plate portion 140 to the outside is that the currents of the eight charging power semiconductor elements 110 are collected and transferred to the battery 300 during charging and the eight discharging power semiconductor elements 120 are discharged from the battery 300 during discharging. . ≪ / RTI >

The source bus bar 150 covers the eight copper plates 140 shown in FIG. 4 and is mounted on the plurality of copper plates 140 in the longitudinal direction. The source bus bars 150 serve to fix the substrate 100, Collecting and flowing water.

1 to 7, a discharging operation mode and a charging operation mode in a high power power heat sink using a heat pipe according to an embodiment of the present invention will be described in detail.

The substrate 100 uses a constant current control circuit 180, a charging power semiconductor element 110, and a discharge power semiconductor element 120, which are OP-AMP, as a circuit for charging and discharging.

As shown in FIG. 7, the discharge operation method uses a P-type discharge power semiconductor element (discharge FET) 120 to perform a discharge operation.

The drain portion of the P-type discharge power semiconductor element 120 is connected to the discharge power supply (2.5 V), the source portion thereof is connected to the shunt resistor 130, and the gate portion thereof is connected to the constant current control circuit 180 ).

One P-Type discharge power semiconductor device 120 flows a current from the source to the drain (12.5 A * 8 ea = 100 A) to 0 A-12.5 A by gate voltage control.

For example, one P-type discharge power semiconductor element 120 flows up to 12.5 A when a gate voltage is applied. At this time, the discharge power supply 320 exists to discharge at 0 V or less.

The current discharged from the battery 300 is consumed in the P-type discharge power semiconductor element 120 through the shunt resistor 130 through the source bus bar 150. [

The discharge power semiconductor device 120 consumes 670 W of heat at a discharged battery voltage of 4.2 V + a discharge power supply 320 of 2.5 V = 6.7 V * 100 A.

The heat generated at this time is directly transferred to the plurality of heat pipes 220, the aluminum heat dissipating fins 210, and the ventilation fan 230 so as to dissipate heat, so that the substrate 100 is not damaged.

 As shown in FIG. 7, the charging operation mode uses a N-type charging power semiconductor element (charging FET) 110 to perform a charging operation.

At this time, the drain portion of the N-type charge power semiconductor device 110 is connected to the charge power supply (7.5V) 310, the source portion is connected to the shunt resistor 130, and the gate portion is connected to the constant current control Circuit 180 is connected.

The constant current control circuit 180 compares the input signal with the sensing voltage at both ends of the shunt resistor 130 as OP-AMP and sends it to the gates of the FETs 110 and 120.

The constant current control circuit 180 controls the gate voltage of the FETs 110 and 120 to be a constant current by sensing the voltage of the shunt resistor 130.

The FETs 110 and 120 transmit a constant current to the battery 300 according to the gate voltage.

The constant current control circuit 180 operates the voltage-gated discharge power semiconductor element 120 at the gate of the FETs 110 and 120 and operates the charge power semiconductor element 110 at the + voltage.

That is, one OP-AMP 180 is connected to the discharge power semiconductor element 120 and the charge power semiconductor element 110.

One N-type charge power semiconductor device 110 flows current from drain to source (12.5 A * 8 ea = 100 A) to 0 A-12.5 A with gate voltage control.

For example, one N-type charge power semiconductor device 110 flows up to 12.5 A when a gate voltage is applied. At this time, the current is supplied from the charging power supply 310.

The 12.5 A output to the source of the charge power semiconductor device 110 passes through the shunt resistor 130 and the eight outputs are collected at one location of the source bus bar 150 and delivered to the battery 300.

The 7.5 V / 100 A supplied from the charging power supply 310 is dropped by 2.7 V in the battery 300 and the charging power semiconductor element 110 is consumed by heating 4.8 V / 100 A (480 W).

The heat generated at this time is directly transferred to the plurality of heat pipes 220, the aluminum heat dissipating fins 210, and the ventilation fan 230 so as to dissipate heat, so that the substrate 100 is not damaged.

The present invention can share the heat pipe of the heat-dissipating heat sink 200 during charging and discharging, thereby increasing the cooling efficiency and saving space.

The embodiments of the present invention described above are not implemented only by the apparatus and / or method, but may be implemented through a program for realizing functions corresponding to the configuration of the embodiment of the present invention, a recording medium on which the program is recorded And such an embodiment can be easily implemented by those skilled in the art from the description of the embodiments described above.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

100: substrate
102: Bolt insertion hole
110: Charging power semiconductor device
120: discharging power semiconductor element
130: Shunt resistance
140: copper plate
150: Source bus bar
160: Power semiconductor element fixing member
170: Bolt
172: Bolt insertion hole
180: Constant current control circuit
200: Heat sink
210: Aluminum heat sink fin
220: heat pipe
222: heat pipe body
224: Heat pipe connection
230: blowing fan
240: Base portion
242:
244: second base portion
300: Battery
310: Charging power supply
320: Discharge power supply

Claims (11)

A substrate on which a plurality of power semiconductor devices and a plurality of discharge power semiconductor devices are arranged in parallel and in which power semiconductor devices are arranged and in which a circuit pattern is formed; And
And a heat dissipation heat sink coupling a base portion, which is a flat plate of a metal material, to the surface of each of the power semiconductor elements of the substrate on which the power semiconductor elements are formed,
Wherein the substrate has a plurality of copper plates that share a shunt resistor by connecting the charge power semiconductor element and a source portion of the discharge power semiconductor element to a surface opposite to a direction in which the power semiconductor element is formed, Wherein the source bus bar, the substrate, and the base are integrally formed by inserting a bolt into the source bus bar, the substrate, and the base unit by closely contacting the source bus bar made of aluminum metal in a longitudinal direction on the plurality of copper plates. The method according to claim 1,
The heat-dissipating heat sink is formed by stacking a plurality of aluminum heat dissipating fins, which are plates of a flat plate, and heat pipes having a "∪" shape in the longitudinal direction passing through the stacked aluminum heat dissipating fins, Heat sink. delete The method according to claim 1,
The heat-dissipating heat sink is formed by stacking a plurality of aluminum heat dissipating fins, which are plates of a flat plate, and heat pipes of a '?' Shape in the longitudinal direction are inserted into at least one of the stacked aluminum heat dissipating fins at predetermined distance intervals,
Wherein the at least one heat pipe has a closed portion penetrating through one side of the base portion, a portion of the heat pipe inserted into the base portion, and a bent portion of both sides exposed to the outside of the base portion. 5. The method of claim 4,
Wherein the base has a heat transfer pad for insulation and heat transfer on a surface opposite to a direction in which the aluminum heat dissipating fins are stacked,
And attaching a surface of each of the power semiconductor elements of the substrate to the attached heat transfer pads. 6. The method of claim 5,
Wherein the base portion mounts a longitudinal power semiconductor element fixing member made of aluminum metal on a surface opposite to a direction in which the heat transfer pad is attached. The method according to claim 1,
Each of the charge power semiconductor devices has a drain portion connected to a charge power supply (7.5V), a source portion connected to a shunt resistor, a gate portion connected to a constant current control circuit OP-AMP,
Wherein each of the discharge power semiconductor elements has a drain portion connected to a discharge power supply (2.5 V), a source portion connected to the shunt resistor, and a gate portion connected to the constant current control circuit, Heat sink. A substrate on which a plurality of charge power semiconductor elements and a plurality of discharge power semiconductor elements are arranged in parallel and in which a circuit pattern is formed; And
A side surface of a base portion, which is a plate of a metal plate, is coupled to a surface of each of the power semiconductor elements of the substrate, and a closed portion of a heat pipe having a 'U' shape penetrates through a certain distance interval And a plurality of heat dissipation heat sinks stacked on the at least one heat pipe in a longitudinal direction,
Wherein the substrate has a plurality of copper plates that share a shunt resistance by connecting the charge power semiconductor element and a source portion of the discharge power semiconductor element to a surface opposite to a direction in which the power semiconductor element is formed, A source bus bar made of an aluminum metal material is adhered to the plurality of copper plates in a longitudinal direction so as to cover a plurality of copper plates, and a bolt is inserted into the source bus bar, the substrate, Heat sink. delete 9. The method of claim 8,
A cooling fan provided on one side of the plurality of aluminum heat-
Further comprising a heat pipe for heating the heat pipe. 9. The method of claim 8,
Each of the charge power semiconductor devices has a drain portion connected to a charge power supply (7.5V), a source portion connected to a shunt resistor, a gate portion connected to a constant current control circuit OP-AMP,
Each of the discharge power semiconductor devices has a drain portion connected to a discharge power supply (2.5 V), a source portion connected to the shunt resistor, a gate portion connected to the constant current control circuit
Wherein each of the charge power semiconductor devices is coupled with a battery and the charging power supply and each discharge power semiconductor device is connected to the battery and the discharge power supply.

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