KR101537477B1 - Method of manufacturing a metal nano structure and metal nano structure manufactured by the same - Google Patents

Abstract

A method for manufacturing metal nanostructure comprises the steps of: forming, on a base, a sacrificial layer pattern on which a plurality of openings are formed to expose the top surface of the base, and forming a metal seed layer pattern which consists of first metals to bury the plurality of openings; removing the sacrificial layer pattern off the base, and then forming a nanometal layer on the metal seed layer pattern through an electroless substitution process to immerse a base with the metal seed layer into a solution into which ions of second metals whose reducing voltage is higher than that of first metals are dissolved; and removing the metal seed layer pattern from the base.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for manufacturing a metal nanostructure, and a metal nanostructure produced by the method.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for manufacturing a metal nanostructure and a metal nanostructure produced thereby, and more particularly, to a metal nanostructure capable of realizing a three-dimensional plasmonic phenomenon capable of focusing a local electromagnetic field The present invention relates to a method for producing a nanostructure and a metal nanostructure produced thereby.

Solar cells and light emitting diodes correspond to optoelectronic devices that absorb light or generate light. The solar cell absorbs light to generate electricity, while the light emitting diode generates light while electrons in the excited state move to a stable state.

The metal nanostructure contained in the optoelectronic device has a unique optical property different from that of a bulk metallic structure. That is, when electromagnetic waves are irradiated on the surface of the metal having the nano-metal structure, free electrons are excited on the surface of the nano-metal structure to cause interaction with electromagnetic waves. This phenomenon is called a plasmonic phenomenon.

This phenomenon can handle light even in very small nano areas beyond the diffraction limit of light, allowing light to be controlled, especially light amplification and unique transmission, absorption and reflection characteristics. Therefore, by using the above phenomenon, the efficiency of the light-based optical element and the photoelectric element can be greatly improved, and a new concept device can be developed.

In particular, the plasmonic phenomenon is closely correlated with the size and shape of the metal nanostructure, and high light loss may occur in the metal nanostructure having a certain thickness or more. Therefore, there are many difficulties in manufacturing metal nanostructures having appropriate size, shape, and thickness.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a method of manufacturing a metal nanostructure which can easily produce a metal nanostructure.

Another object of the present invention is to provide a metal nanostructure produced by the above-mentioned production method.

According to another aspect of the present invention, there is provided a method of fabricating a metal nano structure, including: forming a sacrificial pattern having a plurality of openings exposing an upper surface of a base on a base; A metal seed film pattern made of a first metal is formed. The sacrificial film pattern is removed from the base and the base including the metal seed film pattern is immersed in a solution in which ions of the second metal having a reduction potential higher than that of the first metal are dissociated, A nano metal film pattern is formed on the surface of the metal seed film pattern. Thereafter, the metal seed film pattern is removed from the base.

In one embodiment of the present invention, the sacrificial layer pattern may be formed through a nanoimprint lithography process.

In one embodiment of the present invention, the metal seed layer pattern may be formed through a plating process, a sputtering process, a thermal evaporation process, or an ion beam vaporization process.

In one embodiment of the present invention, a lift-off process may be performed to remove the sacrificial film pattern from the base.

In the method of fabricating a metal nano structure according to an embodiment of the present invention, a capping layer pattern may be additionally formed on the metal seed layer pattern. Here, the capping layer pattern may include a metal or an oxide which may be unsubstituted in the electroless replacement process.

In one embodiment of the present invention, the second metal may be at least one selected from the group consisting of noble metals consisting of gold, platinum, silver and palladium.

In one embodiment of the present invention, the nano metal film pattern may have the shape of a circular tube or a polygonal tube.

According to the method of manufacturing a metal nano structure according to an embodiment of the present invention, a metal film pattern can be formed on various substrates in comparison with a conventional process.

In addition, since a sacrificial film pattern can be formed using a template by a nanoimprint lithography process, it is possible to form a metal film pattern having a size and shape corresponding to the size and shape of the template, and furthermore, Possible advantages. That is, since the sacrificial layer pattern is formed by a nanoimprint lithography process, the sacrificial layer pattern may include a cylindrical or polygonal columnar opening. Accordingly, the nano metal film pattern formed by the electroless replacement process using the metal seed film pattern filled in the opening may have a circular tube shape or a polygonal tube shape.

Meanwhile, since the nano metal film pattern is formed through an electroless replacement process, it is easy to control the thickness of the nano metal film pattern.

FIGS. 1 to 6 are cross-sectional views illustrating a method of manufacturing a metal nanostructure according to an embodiment of the present invention.
7 and 8 are perspective views illustrating metal nanostructures according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. In the accompanying drawings, the sizes and the quantities of objects are shown enlarged or reduced from the actual size for the sake of clarity of the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprise", "comprising" and the like are intended to specify that there is a stated feature, step, function, element, or combination thereof, Quot; or " an " or < / RTI > combinations thereof.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

METHOD FOR PRODUCING METAL NANOSTRUCTURES

FIGS. 1 to 6 are cross-sectional views illustrating a method of manufacturing a metal nanostructure according to an embodiment of the present invention.

Referring to FIG. 1, a sacrificial layer 111 is formed on a base 101. The base 101 may be made of a conductive material or a nonconductive material. That is, the base 101 may be made of a nonconductive material, unlike the conventional electroplating process, so that there is no restriction on the electrical conductivity of the material forming the base 101.

The sacrificial layer 111 may be a material that is easily removed from the base 101 in a subsequent process. The sacrificial layer 111 may be formed of, for example, a polymer material. In this case, the sacrificial layer 111 can be easily patterned into a sacrificial pattern in a subsequent patterning process. The sacrificial layer 111 may be formed through a spin coating process.

Referring to FIG. 2, the sacrificial layer pattern 110 is formed on the base 101 by patterning the sacrificial layer 111. The sacrificial layer pattern 110 includes a plurality of openings 115 exposing an upper surface of the base 101. Each of the openings 115 may determine the shape and size of the subsequently formed metal seed film pattern 121 and the nano metal film pattern 130.

For example, when each of the openings 115 has a cylindrical shape, the metal seed film pattern 121 may have a cylindrical shape, and the nano metal film pattern 130 may have a circular tube shape. Alternatively, when each of the openings 115 has a polygonal columnar shape, the metal seed layer pattern 121 may have a polygonal column shape, and the nano metal layer pattern 130 may have a polygonal tube shape

In order to form the sacrificial layer pattern 110, the sacrificial layer pattern 110 may be formed using optical lithography such as photolithography, laser interference lithography, e-beam lithography, Non-optically based lithography processes such as nanoimprint lithography, nanotransfer printing, and roll imprint lithography can be performed. For example, a nanoimprint lithography process can be performed. That is, the sacrificial layer pattern 110 may be formed on the base 101 by patterning the sacrificial layer 111 by applying heat or UV pressure to the sacrificial layer 111 using a template (not shown).

A sacrificial layer pattern 110 remaining in the opening 115 may be additionally formed on the base 101 so that the sacrificial layer pattern 110 remains in the opening 115. In this case, The base 101 can be partially exposed.

Referring to FIG. 3, a metal seed layer pattern 121 made of a first metal is formed to fill the openings 115.

The metal seed layer pattern 121 may be formed through a plating process, a sputtering process, a thermal vaporization process, or an ion beam vaporization process.

The first metal may include a material having a lower reduction potential than the second metal forming the nano metal film pattern 130 to be formed subsequently. For example, when the second metal is a noble metal such as gold, silver, platinum or palladium, the first metal may include lead, nickel, tin or cadmium. In particular, the first metal may comprise nickel.

As a result, the nano metal film pattern 130 can be easily formed through the electroless replacement process using the metal seed film pattern 121.

In an embodiment of the present invention, a capping layer pattern 123 may be additionally formed to cover the upper portion of the metal seed layer 121. The capping film pattern 123 covers the upper surface of the metal seed film pattern 121 so that the nano metal film pattern 130 is formed on the upper surface of the metal seed film pattern 121 in the electroless replacement process. Can be suppressed from being formed. Furthermore, in the subsequent step of removing the sacrificial film pattern 110, the capping film pattern 123 can suppress the damage of the metal seed film pattern 121.

The capping layer pattern 123 may be formed of a third metal such as oxide or chromium. The capping film pattern 123 may be a material that is not substituted in the subsequent electroless replacement process.

The capping layer pattern 123 may be formed through a sputtering process, a thermal vaporization process, or an ion beam vaporization process.

Referring to FIG. 4, the sacrificial layer pattern 110 is removed from the base 101. A lift off process may be performed to remove the sacrificial film pattern 110. [ As a result, the metal seed film pattern 121 and the capping film pattern 123 may remain on the base 101.

Referring to FIG. 5, the nano metal film pattern 130 is formed on the surface of the metal seed film pattern 121 through the electroless replacement process. The nano metal film pattern 130 may be formed through an electroless replacement process. That is, by immersing the base 101 including the metal seed film pattern 121 in a solution in which ions of a second metal having a reduction potential higher than that of the first metal are dissociated, electrons are emitted from the metal seed film pattern 121 And an oxidative reduction reaction is generated in which the generated electrons are reduced to a second metal to which the second metal ions bind. Therefore, a nano metal film pattern 130 made of a second metal is formed on the sidewall of the metal seed film pattern 121.

The nano metal film pattern 130 is provided to surround the side wall of the metal seed film pattern 121. The nano metal film pattern 130 may have a tube shape. That is, the shapes and sizes of the metal seed layer pattern 121 and the nano metal layer pattern 130 can be easily controlled by adjusting the shape and size of the openings 115.

The second metal forming the nano metal film pattern 130 may include a noble metal consisting of gold, platinum, silver and palladium. Therefore, the second metal has a relatively high reduction potential and can be easily reduced in the electroless replacement process.

Further, since the nano metal film pattern 130 is formed through the electroless replacement process, the process conditions of the electroless replacement process, that is, the process time, the process temperature, and the concentration of the second metal ion are controlled, The thickness of the insulating layer 130 can be easily adjusted.

Referring to FIG. 6, the metal seed film pattern 121 and the capping film pattern 123 are removed from the base 101. For example, the metal seed layer pattern 121 and the capping layer pattern 123 may be removed through a wet etching process using an etchant. At this time, since the nano metal film pattern 130 is made of, for example, a noble metal, it can have excellent corrosion resistance in the wet etching process. As a result, the nano metal film pattern 130 remains on the base 101, so that the metal nano structure including the base 101 and the nano metal pattern 130 is manufactured.

Metal nano structure

7 and 8 are perspective views illustrating metal nanostructures according to an embodiment of the present invention.

Referring to FIGS. 7 and 8, the metal nanostructure according to an embodiment of the present invention includes a base 101 and nano metal film patterns 131 and 133.

The nano metal film patterns 131 and 133 may have a circular tube shape or a polygonal tube shape such as a triangle, a quadrangle, a pentagon, a hexagon, or the like. In addition, the nano metal film patterns 131 and 133 may have various arrangements including a rectangular arrangement and a hexagonal arrangement.

The method of manufacturing the metal nanostructure and the metal nanostructure according to the embodiments of the present invention have a high absorption rate which can not be generally obtained at a specific wavelength band and thus can be applied to an organic solar cell fuel- Solar cells including solar cells, optical devices such as organic light emitting displays (OLEDs) and light emitting devices (LEDs), photoelectrodes usable for hydrogen production and water treatment, and the like.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.

Claims (9)

Forming a sacrificial pattern having a plurality of openings exposing an upper surface of the base on a base;
Forming a metal seed film pattern made of a first metal to fill the openings;
Removing the sacrificial film pattern from the base;
Wherein a metal seed film pattern is formed on a surface of the metal seed film pattern through an electroless replacement step of immersing a base containing the metal seed film pattern in a solution in which ions of a second metal having a reduction potential higher than that of the first metal are dissociated, ; And
And removing the metal seed film pattern from the base. 2. The method of claim 1, wherein forming the sacrificial layer pattern comprises a nanoimprint lithography process. The method of manufacturing a metal nanostructure according to claim 1, wherein the step of forming the metal seed layer pattern comprises a pre-plating process, a sputtering process, a thermal vaporization process, or an ion beam vaporization process. 2. The method of claim 1, wherein removing the sacrificial layer pattern from the base comprises a lift-off process. The method of claim 1, further comprising forming a capping layer pattern on the metal seed layer pattern. [6] The method of claim 5, wherein the capping layer pattern includes a metal or an oxide that can not be removed in the electroless replacement process. The method of claim 1, wherein the second metal is at least one selected from the group consisting of gold, platinum, silver and palladium. The method of claim 1, wherein the nano metal film pattern has a shape of a circular tube or a polygonal tube. A metal or nano structure produced by the method according to any one of claims 1 to 8.

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