KR101535442B1 - Ball heating and press fitting system using temperature adjustment apparatus including analogue memory - Google Patents

Abstract

The present invention relates to a ball heating and press fitting system using a temperature control apparatus having an analog memory, more specifically, which comprises: a heating shaft (30) to heat a ball to be press fitted; a temperature measurement unit (20) measuring a chamber temperature inside the heating shaft (30); and a heating control unit (10) controlling air heating and air supply. The heating control unit (10) comprises: a cell array (100) having a plurality of memory cells; an absolute value circuit (200) wherein an analog signal and an input signal are inputted; and a WTA circuit (300) provided with an output value of the absolute value circuit (200). The memory cells comprise: a cell transistor; and a cell capacitor.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a ball heating and press fitting system using a thermostat including an analog memory,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ball heating press-fitting system, and more particularly, to a ball heating press fitting system using a thermostat including an analog memory.

Generally, an engine of an automobile may include a cylinder block constituting the main body, a cylinder head mounted on the cylinder block and equipped with an intake / exhaust valve for fuel, and a piston for compressing fuel to produce power by moving up and down in the cylinder block . This piston can transmit power to the crankshaft through a connecting rod as the fuel compresses, explodes, expands, and exhausts.

At this time, the cylinder block and the piston may be worn as the piston is closely attached to the side wall in the cylinder block due to the power generated by compressing and exploding the fuel in the cylinder block and continuously moving up and down. Further, since the inside of the cylinder block is kept at a high temperature state due to the explosion of the fuel, oil connected to the oil tank can be injected into the cylinder block in order to alleviate such abrasion and high temperature condition.

In this manner, the injected engine oil needs to be sealed so as not to be leaked in other areas other than the predetermined supply path inside the engine. In order to prevent leakage in the other area, the ball may be press-fitted into the cylinder block, . Further, such a metal ball may be press-fitted so as to prevent leakage of oil injected to prevent wear between parts related to an automatic transmission.

On the other hand, the ball press-fitting process is a process for producing core parts used in an automatic transmission, and a single unit can produce about 40,000 to 50,000 parts per year, which requires high reliability and operability. Recently, various automation functions have been added to the automobile manufacturing process to improve the productivity, and as the shapes of the parts have become various, the defect rate such as the sticking and cracking occurring during ball indentation is increasing. However, in order to reduce defects associated with ball indentation, there is a problem that has not been disclosed in the technique for treating the ball to be pressed.

The present invention has been proposed in order to solve the above-mentioned problems of the previously proposed methods. The ball heating and pressurizing system includes a heating shaft for heating a ball to be press-fitted, a temperature measuring part for measuring a chamber temperature in the heating shaft, And the heating control unit controls the heating and supply amount of the air based on the chamber temperature, and the heating control unit includes a memory cell array, an absolute value circuit to which the analog signal stored in the memory cell array and the input signal transmitted from the temperature measurement unit are inputted, Wherein each of the memory cells includes a cell transistor and a cell capacitor, wherein the memory cell array is arranged between the memory cells arranged in the row direction, between the source electrodes of the cell transistor, between the drain electrodes, First terminals connected to the electrodes are connected to each other, and arranged in the column direction The second terminals opposite to the first terminal of the cell capacitor are connected to each other between the memory cells to heat the ball to be press-fitted so as to increase the press-fitting efficiency and reduce the possibility of defects that may occur during press-fitting of the ball, It is an object of the present invention to provide a ball heating press-fitting system using a temperature control device including an analog memory, which can maintain the temperature of a heating shaft for heating constant.

According to an aspect of the present invention, there is provided a ball heating and pressurizing system using a temperature controller including an analog memory,

A heating shaft for heating a ball to be press-fitted;

A temperature measuring unit for measuring a temperature of the chamber in the heating shaft; And

And a heating control unit for controlling the air heating and the supply amount so that the chamber temperature is maintained within a predetermined temperature range based on the measured chamber temperature,

The heating control unit includes:

A memory cell array including a plurality of memory cells arranged in a predetermined array;

An absolute value circuit receiving an analog signal stored in the memory cell array and an input signal transmitted from the temperature measuring unit; And

And a WTA circuit receiving an output value of the absolute value circuit,

Each of the memory cells includes:

A cell transistor composed of double poly-i-pyrimidine; And

And a cell capacitor to which a first terminal is connected to a gate electrode of the cell transistor,

The memory cell array includes:

The source electrodes of the cell transistors are connected to the source electrodes, the drain electrodes of the memory cells are connected to the drain electrodes, the first terminals connected to the gate electrodes are connected to the first terminals,

And the second terminals opposite to the first terminal of the cell capacitor are connected to each other between the memory cells arranged in the column direction.

Preferably, the double polyimide is selected from the group consisting of

A floating gate whose one end extends so as to increase the intensity of the electric field along the flow direction of the electrons;

A control gate overlying the floating gate; And

And an injector spaced apart from the control gate and having an extended end of the floating gate inserted therein and electrically connected to the floating gate.

Preferably,

An air supply regulator for receiving an air supply control signal from the heating controller; And

And an air heating unit for heating the air supplied from the air supply adjusting unit based on the heating temperature received from the heating control unit.

Preferably, the memory cell array includes:

The memory cells may be arranged in a 2x2 array.

Preferably,

When a write operation is performed on any one of the memory cells included in the memory cell array, a first voltage is applied to the column of the memory cell, and a second voltage lower than the first voltage is applied to the row of the memory cell The second voltage is applied to the remaining columns of the memory cell array, and the remaining rows of the memory cell array are grounded.

Preferably,

When an erase operation is performed on any one of the memory cells included in the memory cell array, the column of the memory cell is grounded, a second voltage is applied to the row of the memory cell, Each of the rows may be configured such that a first voltage greater than the second voltage is applied.

More preferably,

The first voltage may be configured to be twice as high as the second voltage.

Preferably, the heating control unit includes:

And a sample / hold circuit for receiving signals provided from the temperature measuring unit.

Preferably,

The output value of the absolute value circuit may be composed of the absolute value of the difference between the analog signal and the input signal.

More preferably, the WTA circuit comprises:

And output the output value of the memory cell having the smallest difference between the analog signal and the input signal of the memory cell array as a logic one and output the output value of the remaining memory cells as a logic zero.

Preferably, the absolute value circuit comprises:

And to be connected to the memory cells of the memory cell array, respectively.

Preferably, the absolute value circuit comprises:

Differential amplifier;

A first MOS transistor connected to one terminal of the differential amplifier;

A first capacitor coupled to the first MOS transistor;

A second MOS transistor connected to the one terminal of the differential amplifier in parallel with the first MOS transistor; And

And a second capacitor connected to the second MOS transistor.

Preferably,

The output terminal of the differential amplifier may be configured to be connected to the input terminal of the WTA circuit.

More preferably,

The output value of the differential amplifier may be configured to be proportional to an absolute value of a voltage difference between the first capacitor and the second capacitor.

Preferably, the WTA circuit comprises:

Partial circuits connected to the absolute value circuit connected to each memory cell of the memory cell array; And

And a third MOS transistor commonly connected to output terminals of the partial circuits.

More preferably, each said partial circuit comprises:

A fourth MOS transistor having a gate electrode connected to an output terminal of the absolute value circuit;

A fifth MOS transistor connected to a source electrode of the fourth MOS transistor; And

And a sixth MOS transistor and a seventh MOS transistor connected to a drain electrode of the fourth MOS transistor.

More preferably,

And a drain electrode of the fourth MOS transistor may be connected to a gate electrode of the sixth MOS transistor and a drain electrode of the seventh MOS transistor.

More preferably,

And a drain electrode of the sixth MOS transistor may be connected to a source electrode of the third MOS transistor and a gate electrode of the fifth MOS transistor.

More preferably,

The same bias voltage may be applied to the gate electrode of the seventh MOS transistor in each of the memory cell arrays.

According to the ball heating press-fitting system using the temperature controller including the analog memory proposed in the present invention, the ball heating press fitting system includes a heating shaft for heating a ball to be press-fitted, a temperature measuring unit And a heating control section for controlling the heating and supplying amount of air based on the measured chamber temperature, wherein the heating control section includes an absolute value circuit for inputting the analog signal stored in the memory cell array and the memory cell array and the input signal transmitted from the temperature measuring section, And a WTA circuit provided with an output value of the absolute value circuit, wherein each of the memory cells includes a cell transistor and a cell capacitor, wherein the memory cell array is arranged between the memory cells arranged in the row direction, between the source electrodes of the cell transistor, And the first terminals connected to the gate electrode are connected to each other And the second terminals opposite to the first terminal of the cell capacitor are connected between the memory cells arranged in the column direction so that the ball to be press-fitted is heat-treated to increase the press-in efficiency and reduce the possibility of defects that may occur during press- The temperature of the heating shaft for heating the balls can be kept constant according to the control.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram illustrating a configuration of a ball heating and pressurizing system using a temperature controller including an analog memory according to an embodiment of the present invention. FIG.
2 is a view showing temperature characteristics of an air heating unit included in a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention.
3 is a block diagram illustrating a configuration of a heating control unit included in a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention.
4 is a circuit diagram of a memory cell included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention.
5 is a circuit diagram of a memory cell array included in a heating control unit of a ball heating and pressurizing system using a temperature controller including an analog memory according to an embodiment of the present invention.
FIG. 6 is a diagram illustrating a double poly Ipyrrometer of a memory cell array included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention. FIG.
7 is a cross-sectional view of a double poly Ipyrrometer of a memory cell array included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention.
8 is a diagram illustrating linear programming characteristics of a memory cell array included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention.
9 is a diagram showing an absolute value circuit included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention.
FIG. 10 illustrates an absolute value circuit and a WTA circuit connected to each block included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention. FIG.
11 is a view showing a heating shaft included in a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. In the following detailed description of the preferred embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. The same or similar reference numerals are used throughout the drawings for portions having similar functions and functions.

In addition, in the entire specification, when a part is referred to as being 'connected' to another part, it may be referred to as 'indirectly connected' not only with 'directly connected' . Also, to "include" an element means that it may include other elements, rather than excluding other elements, unless specifically stated otherwise.

The inventors of the present invention conducted various test studies to reduce the factors causing defects (sticking, cracks, etc.) related to the conventional ball indentation, and performed a heating process before pressing the ball, Respectively. The effects of heating before ball indentation are summarized in Table 1 below.

Preheating test condition Preheat temperature 40 degrees 50 degrees 60 degrees 70 degrees 80 degrees 90 degrees 100 degrees Test quantity
(pcs) 3 3 3 2 2 2 2 Preheating test result Preheating time (sec) until reference temperature is reached 11 ~
15 19 ~
24 25 ~
26 30 37 50 ~
59 52 ~
61 Discoloration or not none none none none none none none Presence or absence of oil film has exist has exist has exist has exist none none none Hole size change Cap
(Φ7) Before preheating 0.01 ~
0.03 0.03 0.02 ~
0.03 0.02 ~
0.025 0.025 ~
0.03 0.04 ~
0.05 0.03 ~
0.05 After preheating 0.02 ~
0.035 0.035 ~
0.04 0.03 ~
0.04 0.03 ~
0.04 0.03 ~
0.04 0.05 ~
0.06 0.03 ~
0.07 Ball-1
(陸 6.3) Before preheating -0.025
~ -0.03 -0.02 ~
-0.03 -0.02 ~
-0.03 -0.02 ~
-0.025 -0.025 -0.03 -0.03 After preheating -0.025
~ -0.02 -0.015
~ -0.03 -0.01 ~
-0.025 -0.02 -0.015
~ -0.02 -0.02 -0.02 Ball-2
(陸 6.3) Before preheating -0.025
~ -0.03 -0.02 ~
-0.03 -0.02 ~
-0.03 -0.02 ~
-0.025 -0.02 ~
-0.025 -0.025
~ -0.03 -0.03 After preheating -0.02 ~
-0.03 -0.015
~ -0.03 -0.01 ~
-0.025 -0.02 -0.01 ~
-0.02 -0.02 -0.02 Preheating Test Comprehensive Discoloration occurs at over 100 degrees Celsius. The oil film begins to burn at temperatures above 70 degrees Celsius and can not be found at 80 degrees Celsius. The hole extensibility test extends the range from + 0.005 to + 0.02 (within 100 degrees Celsius), although there is a product-specific difference. Test results Preheating should be performed at temperatures below 70 degrees Celsius.

As shown in the test results in Table 1, when the ball to be press-fitted is preheated to a predetermined temperature (for example, a temperature of 70 degrees Celsius or less), the oil film is maintained and the expandability is increased, Can be seen. Therefore, the present inventors have proposed a ball heating press-fitting system capable of heating a ball to be press-fitted to a desired temperature range.

1 is a block diagram illustrating a configuration of a ball heating and pressurizing system using a temperature controller including an analog memory according to an embodiment of the present invention. 1, a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention includes a heating shaft 30, a temperature measuring unit 20, and a heating controller 10 And may further comprise an air supply regulating unit 50 and an air heating unit 40. The heating shaft 30 is a part to be heated including a ball to be press-fitted, and may include a predetermined chamber therein. The temperature measuring section 20 can measure the chamber temperature within the heating shaft 30. [ The heating control unit 10 can heat the air based on the measured chamber temperature and adjust the supply amount of the air. The air supply regulating unit 50 can regulate the amount of air supplied to the air heating unit 40 based on the air supply control signal provided from the heating control unit 10. [ The air heating section 40 can heat the air supplied from the air supply regulating section 50 based on the heating temperature provided from the heating control section 10. [ The heated air output from the air heating section 40 can be provided in the chamber of the heating shaft 30. [

2 is a view showing temperature characteristics of an air heating unit included in a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention. As shown in FIG. 2, the air heating unit 40 included in the ball heating press-fitting system using the temperature controller including the analog memory according to the embodiment of the present invention has a reference pressure and a temperature (101.3 kPa and 0 The temperature for heating the air supplied per unit time in the environment may have a predetermined inverse relationship. For example, the air heating section 40 can heat air up to 650 degrees Celsius. At this time, the pressure of the air supplied from the air supply regulating part 50 can be adjusted in the range of about 0.05 MPa to about 0.39 MPa. Hereinafter, the heating controller 10 included in the ball heating and pressurizing system using the temperature controller including the analog memory according to an embodiment of the present invention will be described in more detail.

FIG. 3 is a block diagram illustrating a configuration of a heating control unit included in a ball heating and pressurizing system using a temperature controller including an analog memory according to an embodiment of the present invention. Referring to FIG. 3, the heating control unit 10 included in the ball heating press-fitting system using the temperature controller including the analog memory according to the embodiment of the present invention includes a memory cell array 100, an absolute value circuit 200 And a WTA circuit 300 and may further include a sample / hold circuit 400 receiving an input signal from the temperature measuring unit 20. The sample / In the memory cell array 100, a plurality of memory cells may be arranged in an array form. At this time, each memory cell may be configured to include an electronically erasable and programmable read-only memory (EEPROM). The analog signal provided from the temperature measuring unit 20 may be latched by the sample / hold circuit 400 and compared with the signal of each cell of the memory cell array 100. The result of the signal thus compared becomes the input of the absolute value circuit 200, and the difference between the two signals can be output in the absolute value form. This output becomes the input signal of the WTA circuit 300. The output of the block corresponding to the memory cell having the smallest potential difference between the two signals can be output as the logical value 1, Lt; / RTI > Accordingly, a block of the memory cell having a value closest to the input signal can be selected.

4 is a circuit diagram of a memory cell included in a heating control unit of a ball heating and pressurizing system using a temperature controller including an analog memory according to an embodiment of the present invention. FIG. 2 is a circuit diagram of a memory cell array included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to FIG. 4 and 5, a memory cell array 100 included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention includes an M × N array (Where M and N are natural numbers, respectively). For example, the memory cell array 100 may include memory cells MCL arranged in a 2x2 array. For example, the memory cell array 100 may include a first memory cell MCL00, a second memory cell MCL01, a third memory cell MCL10, a fourth memory cell MCL11, and the like. In the following description, the position of the first memory cell MCL00 is (0,0), the position of the second memory cell MCL01 is (0,1), the position of the third memory cell MCL10 is (1, 0), and the position of the fourth memory cell MCL11 is represented by (1,1).

Each memory cell MCL may include a cell transistor having a double poly-EEPROM and a cell capacitor having a first terminal connected to a gate electrode of the cell transistor MCL. In the memory cell array 100, between the memory cells MCL00 and MCL01 or MCL10 and MCL11 arranged in the row direction, the source electrodes of the cell transistors are connected to each other (L3), and the drain electrodes are connected to the drain electrodes (L2), and a first terminal connected to the gate electrode may be connected to the first terminals (L1). Further, the memory cell array 100 may be connected between the memory cells MCL00 and MCL10, or MCL01 and MCL11 arranged in the column direction, and the second terminals opposite to the first terminals of the respective cell capacitors (L4).

FIG. 6 is a view showing a double poly-pyramid of a memory cell array included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a double poly-pyramid of a memory cell array included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention. 6 and 7, in each of the memory cells of the memory cell array 100 included in the heating control unit of the ball heating press-fitting system using the temperature controller including the analog memory according to the embodiment of the present invention, (EEPROM) included in the MCL may comprise a floating gate 110, a control gate 120 and an injector 130 and may include a substrate 140, source and drain regions 141 ), A channel region 142, a gate oxide film 143, and a dielectric layer 144.

A floating gate 110 is a charge injection region for storing a charge, and one end may extend in a concavo-convex shape so that the intensity of the electric field increases along the flow direction of electrons. For example, one end of the floating gate 110 may be extended to increase the electric field where the tunnel current flows, and to decrease the programming voltage required in the write and erase operations.

A control gate 120 may be disposed on the floating gate 110 and may overlap the floating gate 110. The injector 130 is spaced apart from the control gate 120 and may be formed from the same layer as the control gate 120 as the portion where the extended end of the floating gate is inserted. Thus, the electric field intensity at the tunnel current flows through the extended end of the floating gate 110, and the programming voltage required at the write or erase operation can be lowered. Such an extended end can be implemented by applying an inverse proportion of the electric field intensity to the magnitude of the angle formed by the concavo-convex shape of the electric field traveling direction.

Double polyimide (EEPROM), on the other hand, may include a source region and a drain region 141 doped with impurities in the substrate 140 under both sides of the floating gate 110. A gate oxide layer 143 may be further included as an intermediate layer between the floating gate 110 and the channel region 142 formed on the substrate 140. In this case, the gate oxide film 143 can function as a tunnel oxide film. In addition, the double poly (EEPROM) may further include a dielectric layer 144 between the floating gate 110 and the control gate 120. The dielectric layer 144 may include a material such as an oxide film, an ONO film (oxide-nitride-oxide), or the like.

Such a double poly (EEPROM) can control the charge amount of the floating gate 110 by the Fowler-Nordheim (FN) tunneling injection method. This charge amount adjustment operation is referred to as programming, and programming may include a write operation and an erase operation. In the case of a write operation, electrons at the drain electrode of the memory cell MCL may be transferred to the floating gate 110. To this end, the programming voltage Vpp is applied to the control gate 120, and the injector 130 can be grounded. Conversely, in the case of an erase operation, electrons in the floating gate 110 may be transferred to the drain electrode, for which the control gate 120 is grounded and the programming voltage Vpp may be applied to the injector 130. In this case, electrons of the floating gate 110 can be moved to the drain electrode beyond the high energy barrier of the oxide film by the electric field in the direction of the control gate 120. At this time, the magnitude of the current to be transmitted can be determined according to Equation (1) below.

Here, A and B are constants, V represents a potential difference between the floating gate 110 and the injector 130, and Q represents the amount of charge.

As shown in Equation (1), the magnitude of the current due to the FN tunneling is proportional to the exponential function exp of the voltage applied from the outside, so that the amount of charge can be finely adjusted. As described above, electrons moved to the floating gate 110 by programming can exhibit an inactive characteristic in which, when the programming voltage is removed, the high energy barrier of the oxide film makes it impossible to flow in and out. Therefore, the threshold voltage of the transistor can be determined by the amount of charge of the floating gate 110, and the specific data can be stored in the memory cell using this characteristic.

Particularly, in order for electrons to move through the oxide film by FN tunneling implantation, a high power source must be applied from the outside. Such a high voltage deteriorates the oxide film, shortening the lifetime of the memory cell MCL, It can also affect the retention of data that is stored. However, as shown in FIG. 6, as the injector 130 protrudes in a protruding form, the programming voltage applied from the outside can be reduced.

Referring again to the memory cell array 100 shown in FIGS. 4 and 5, when writing is performed to one of the memory cells MCL to move electrons from the injector 130 to the floating gate 110 The programming voltage Vpp is applied to the column of the memory cell MCL and Vmid (= Vpp / 2) is applied to the remaining column, the row of the memory cell MCL is grounded, . Conversely, when performing an erase operation on any one of the memory cells MCL, the column of the memory cell MCL is grounded, the programming voltage Vpp is applied to the row of the memory cell MCL, And the Vmid can be applied to the row.

Control of the operation of the memory cells MCL included in the memory cell array 100 is performed in such a manner that the write operation or the erase operation is performed between the control gate 120 of the specified memory cell MCL and the injector 130 Only the potential difference becomes equal to the programming voltage Vpp and the potential difference between the control gate 120 and the injector 130 in the remaining memory cells MCL may be Vmid or zero.

For example, when a write operation is performed in the first memory cell MCL00, the programming voltage Vpp is applied to the Cont0 line, the Vmid voltage, which is a half of the programming voltage Vpp, is applied to the Cont1 line, And the Vmid voltage may be applied to the Int1 line. In this case, the potential difference between the control gate 120 and the injector 130 located in the first to fourth memory cells MCL00, MCL01, MCL10, and MCL11 may be Vpp, Vmid, Vmid, and 0, respectively. Accordingly, the movement of the electrons by the tunneling implantation can occur only in the first memory cell MCL00 because the movement of the electrons by the implantation has the exponential characteristic as in Equation (1) to be. The programming characteristic and the interference effect according to this will be described with reference to Fig.

8 is a diagram illustrating a linear programming characteristic of a memory cell array included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention. As shown in Fig. 8, the second to fourth memory cells MCL01, MCL10 and MCL11, which are memory cells that are not programmed in the above example, can be kept uninterrupted by the applied voltage. On the other hand, in the case of the first memory cell MCL00 being the memory cell to be programmed, it can be changed linearly by the programming operation.

3, the reading operation of the heating control unit of the ball heating press-fitting system using the temperature controller including the analog memory according to the embodiment of the present invention is performed by the memory cell array 100, the absolute value circuit 200 ) And the WAT circuit 300, respectively.

9 is a diagram illustrating an absolute value circuit included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention. 9, an absolute value circuit 200 included in a heating control unit of a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention includes a memory (not shown) And may include a differential amplifier DA, a first MOS transistor MN1, a first capacitor C1, a second MOS transistor MN2, and a second capacitor C2, . The first MOS transistor MN1 may be connected to the negative (-) terminal of the differential amplifier DA. The first capacitor C1 may be connected to one terminal of the first MOS transistor MN1. The second MOS transistor MN2 may be connected to the negative terminal of the differential amplifier DA in parallel with the first MOS transistor MN1. And the second capacitor C2 may be connected to the second MOS transistor MN2.

In the absolute value circuit 200, the reference voltage Vref is applied to the positive (+) terminal of the differential amplifier DA and the internal MOS transistor MN0 is turned on so that the internal capacitor C3 may be charged. After this initial operation, the voltage Va and the voltage Vb may be applied to the gates of the first MOS transistor MN1 and the second MOS transistor MN2 which are in the grounded state, respectively. In this case, the following expression (2) may be taken into consideration.

Here, Vth is the threshold voltage of the internal MOS transistor MN0, and Max (Va, Vb) shows a larger value of Va and Vb. At this time, Va and Vb are assumed to be smaller than Vref-Vth, respectively.

The first capacitor C1 and the second capacitor C2 can be respectively charged through the first MOS transistor MN1 and the second MOS transistor MN2 as two voltages satisfying these conditions and conditions are applied have. By thus charging the first capacitor C1 and the second capacitor C2 respectively, the potential of the node X connected to the first MOS transistor MN1 and the potential of the node Y connected to the second MOS transistor MN2, Vref-Va-Vth and Vref-Vb-Vth.

On the other hand, after the charging of the first capacitor C1 and the second capacitor C2 is completed, the voltages Va and Vb applied to the first MOS transistor MN1 and the second MOS transistor MN2 are crossed, (MN0) is turned off, the internal capacitor C3 starts to be discharged. For example, when Va among the voltages Va and Vb applied to the first MOS transistor MN1 and the second MOS transistor MN2 respectively has a larger value, the potential of the node X can be maintained unchanged. However, as the potential newly applied to the gate electrode of the second MOS transistor MN2 is applied with a value relatively larger than the potential before the switch, more electrons can be charged in the first capacitor C1, The electrons in the capacitor C3 can move to the first capacitor C1. Such charging can change the potential of the node Y from Vref-Vb-Vth to Vref-Va-Vth. The output Vo of the differential amplifier DA can be proportional to the absolute difference of Va and Vb (that is, | Va-Vb |) due to the discharge of the internal capacitor C3 which changes the potential of the node Y have. This result can be similarly applied when Va is smaller than Vb.

By using the above-described operation characteristics of the absolute value circuit, the absolute potential difference between the voltage Va, which is the voltage applied from the temperature measurement unit 20, and Vb, which is the value stored in the memory cell MCL, can be known.

10 is a diagram showing an absolute value circuit and a WTA circuit connected to each block included in a heating control unit of a ball heating and pressurizing system using a temperature controller including an analog memory according to an embodiment of the present invention. The absolute value circuit 200 and the WTA circuit 300 are connected to the blocks BL0, BL1, BL2 and BL3 connected to the respective memory cells MCL of the memory cell array 100, . At this time, the output terminal of the differential amplifier DA of the absolute value circuit 200 may be connected to the input terminal of the WTA circuit 300.

The WTA circuit 300 includes partial circuits PC1 to PC4 connected to the output terminal of the absolute value circuit 200 connected to each memory cell MCL of the memory cell array 100, And a third MOS transistor MN3 commonly connected to the output terminal of the second transistor PC4.

10, the first block BL0, the second block BL1, the third block BL2 and the fourth block BL3 are connected to the first memory cell MCL00, the second memory cell MCL01, 3 shows the absolute value circuit 200 and the WTA circuit 300 connected to the third memory cell MCL10 and the fourth memory cell MCL11. 10, the second numeral in the reference numerals of the MOS transistor or the capacitor represents the block number (0, 1, 2, 3) corresponding to each memory cell MCL.

Each of the partial circuits PC may be composed of one PMOS transistor and three NMOS transistors. For example, each of the partial circuits PC includes a fourth MOS transistor MN4 whose gate electrode is connected to the output terminal of the absolute value circuit 200, a fifth MOS transistor MN5 connected to the source electrode of the fourth MOS transistor And sixth and seventh transistors MN6 and MP1 connected to the drain electrode of the fourth MOS transistor. At this time, the drain electrode of the fourth MOS transistor MN4 may be connected to the gate electrode of the sixth MOS transistor MN6 and the drain electrode of the seventh MOS transistor MP1. The drain electrode of the sixth MOS transistor MN6 may be connected to the source electrode of the third MOS transistor MN3 and the gate electrode of the fifth MOS transistor MN5. At this time, the first bias voltage Vbias1 common to each of the memory cell arrays 100 may be applied to the gate electrode of the seventh MOS transistor MP1, which is a PMOS transistor.

Such a WTA circuit 300 can be operated by a so-called winner-take-all (WTA) mechanism, that is, a WTA circuit of a block BL having the smallest Hamming distance between an input signal and a stored signal And may be configured to select the memory cell MCL. Accordingly, the WTA circuit 300 can be configured to select the block BL having the smallest output of the absolute value circuit 200 corresponding to the input of the circuit.

For example, when the output value Vo of the absolute value circuit 200 applied to the gate electrode of the fourth MOS transistor MN40 of the first memory cell MCL00 is the lowest, Since the first bias voltage Vbias1 applied to the seventh MOS transistor MP10 and the fourth MOS transistor MP10 is applied commonly to the four blocks BL0, BL1, BL2 and BL3, The conductance of the fourth MOS transistor MN40 is determined, and the voltage of the node Vout0 may be the highest. Since the source electrode of the sixth MOS transistor MN6 of each of the blocks BL0, BL1, BL2 and BL3 is connected to the drain electrode of the third MOS transistor MN3 to constitute a common drain circuit, the first block BL0 The drain potential of the sixth MOS transistor MN60 included in the second MOS transistor MN60 may be the highest among all the blocks BL0 to BL3. This output can be fed back to the CMOS circuit composed of the fifth to seventh MOS transistors MN5, MN6 and MP1. By this return, the lowest voltage is applied to the fourth MOS transistor MN4 of each block BL Only the output of the authorized block may be output as the logical value 1, and the output of the remaining block may be the logical value 0. This is because the drain electrode of the sixth MOS transistor MN6 is connected to the power supply voltage so that only the saturated state or the disconnected state is possible. That is, the sixth MOS transistor MN6 may be set to the saturation state for the block with the smallest error of the two values, and the sixth MOS transistor MN6 may be set to the blocking state for the remaining blocks.

11 is a view showing a heating shaft included in a ball heating press-fitting system using a temperature controller including an analog memory according to an embodiment of the present invention. As shown in Figs. 1 and 11, the process of preheating and press-fitting the ball in the heating shaft 30 and the chamber by receiving the air heated by the heating control unit 10 is performed in a predetermined temperature range on a predetermined process line Can be performed automatically.

The present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics of the invention.

10: heating control unit 20: temperature measuring unit
30: heating shaft 40: air heating section
50: air supply regulator 100: memory cell array
110: floating gate 120: control gate
130: injector 140: substrate
141: source / drain region 142: channel region
143: gate oxide film 144: dielectric layer
200: Absolute value circuit 300: WTA circuit
400: sample / hold circuit 500: input pad

Claims (19)

As a ball heating press-fitting system,
A heating shaft (30) for heating the ball to be press-fitted;
A temperature measuring unit 20 for measuring a temperature of the chamber in the heating shaft 30; And
And a heating control unit (10) for adjusting the amount of air heating and supply so that the chamber temperature is maintained within a predetermined temperature range based on the measured chamber temperature,
The heating control unit (10)
A memory cell array (100) comprising a plurality of memory cells (MCL) arranged in a predetermined array;
An absolute value circuit 200 receiving an analog signal stored in the memory cell array 100 and an input signal transmitted from the temperature measurement unit 20; And
And a WTA circuit (300) receiving the output value of the absolute value circuit (200)
The memory cells MCL,
A cell transistor composed of double poly-i-pyrimidine; And
And a cell capacitor to which a first terminal is connected to a gate electrode of the cell transistor,
In the memory cell array 100,
The source electrodes of the cell transistors are connected to the source electrodes, the drain electrodes are connected to the drain electrodes, and the first terminals connected to the gate electrodes are connected to the first terminals of the memory cells MCL arranged in the row direction And,
And the second terminals opposite to the first terminal of the cell capacitor are connected between the memory cells MCL arranged in the column direction.
The double polyimide film of claim 1,
A floating gate 110 whose one end extends so as to increase the intensity of the electric field along the direction in which electrons flow in and out;
A control gate (120) overlying the floating gate (110); And
And an injector (130) spaced apart from the control gate (120) and electrically connected to the floating gate (110) with an extended end of the floating gate (110) inserted therein A ball heating indentation system using a temperature control device.
The method according to claim 1,
An air supply regulator 50 for receiving an air supply control signal from the heating controller 10; And
Further comprising an air heating section (40) for heating the air supplied from the air supply regulating section (50) based on the heating temperature received from the heating control section (10) Ball heating indentation system using regulator.
The memory cell array according to claim 1, wherein the memory cell array (100)
Characterized in that the memory cells (MCL) are arranged in a 2x2 array.
The method according to claim 1,
When a write operation is performed on any one of the memory cells MCL included in the memory cell array 100, a first voltage is applied to the column of the memory cell MCL, A second voltage smaller than the first voltage is applied to the memory cell array 100, the second voltage is applied to the remaining columns of the memory cell array 100, and the remaining rows of the memory cell array 100 are grounded , A ball heating indentation system using a temperature controller including an analog memory.
The method according to claim 1,
When a memory cell MCL included in the memory cell array 100 is erased, the column of the memory cell MCL is grounded and the row of the memory cell MCL has a second voltage , And a first voltage greater than the second voltage is applied to the remaining columns and rows of the memory cell array (100). .
The method according to claim 5 or 6,
Wherein the first voltage is twice the second voltage. ≪ RTI ID = 0.0 > 11. < / RTI >
The heating control apparatus according to claim 1, wherein the heating control section (10)
Further comprising a sample / hold circuit (400) for receiving a signal provided from the temperature measuring unit (20).
The method according to claim 1,
Wherein the output value of the absolute value circuit (200) is an absolute value of a difference between the analog signal and the input signal.
The apparatus of claim 9, wherein the WTA circuit (300)
The output value of the memory cell MCL having the smallest difference between the analog signal and the input signal among the memory cell array 100 is output as the logic 1 and the output value of the remaining memory cell MCL is output as the logic 0 Characterized by a ball heating indentation system using a temperature controller including an analog memory.
The apparatus of claim 1, wherein the absolute value circuit (200)
Wherein each of the memory cells of the memory cell array (100) is connected to the memory cells of the memory cell array (100).
The apparatus of claim 1, wherein the absolute value circuit (200)
A differential amplifier DA;
A first MOS transistor MN1 connected to one terminal of the differential amplifier DA;
A first capacitor C1 connected to the first MOS transistor MN1;
A second MOS transistor (MN2) connected in parallel with the first MOS transistor (MN1) to the one terminal of the differential amplifier (DA); And
And a second capacitor (C2) connected to the second MOS transistor (MN2). The ball heating press-fitting system according to claim 1, wherein the second capacitor (C2) is connected to the second MOS transistor (MN2).
13. The method of claim 12,
Wherein the output terminal of the differential amplifier (DA) is connected to an input terminal of the WTA circuit (300).
13. The method of claim 12,
Characterized in that the output value of the differential amplifier (DA) is proportional to the absolute value of the voltage difference between the first capacitor (C1) and the second capacitor (C2). The ball heating Indentation system.
The apparatus of claim 1, wherein the WTA circuit (300)
Partial circuits (PC) connected to the absolute value circuit (200) connected to each memory cell (MCL) of the memory cell array (100); And
And a third MOS transistor (MN3) commonly connected to an output terminal of the partial circuits (PC).
16. The circuit according to claim 15, wherein each said partial circuit (PC)
A fourth MOS transistor MN4 having a gate electrode connected to an output terminal of the absolute value circuit 200;
A fifth MOS transistor MN5 connected to a source electrode of the fourth MOS transistor; And
And a sixth MOS transistor (MN6) and a seventh MOS transistor (MP1) connected to a drain electrode of the fourth MOS transistor (MN4). system.
17. The method of claim 16,
And a drain electrode of the fourth MOS transistor MN4 is connected to a gate electrode of the sixth MOS transistor MN6 and a drain electrode of the seventh MOS transistor MP1. Ball heating indentation system using device.
18. The method of claim 17,
Characterized in that the drain electrode of the sixth MOS transistor (MN6) is connected to the source electrode of the third MOS transistor (MN3) and the gate electrode of the fifth MOS transistor (MN5). Ball heating indentation system using device.
18. The method of claim 17,
Wherein the same bias voltage is applied to the gate electrode of the seventh MOS transistor (MP1) in each of the memory cell arrays (100).

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