KR101534823B1 - Image sensor and image sensing system including of the same - Google Patents

Abstract

An image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array portion formed in a pixel region defined in the semiconductor substrate, the pixel array portion including a plurality of photoelectric conversion portions, a plurality of driving circuits formed in a circuit region defined in the semiconductor substrate, And at least one heat interrupter formed between the circuit region and for blocking the heat generated in the circuit region from being transmitted to the pixel region through the semiconductor substrate. The heat shield may be applied to an image sensor using a BIS (Back-Side Illumination Sensor) or an SOI (Silicon On Insulator) semiconductor substrate.

CIS, BIS, heat, heat block

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor and an image sensing system including the same,

Embodiments of the present invention relate to an image sensor and an image sensing system including the same, and more particularly, to a CMOS image sensor and a CMOS image sensing system including the CMOS image sensor.

An image sensor is an element that converts an optical image into an electrical signal. Recently, with the development of the computer industry and the communication industry, the demand for a CMOS image sensor with improved performance in various fields such as a digital camera, a camcorder, a personal communication system (PCS), a game machine, a light camera, a medical micro camera, .

The CMOS image sensor may include a photodiode unit for sensing light emitted from the outside and a circuit unit for processing the sensed light into an electrical signal for data conversion. As the amount of light received by the photodiode unit increases, the photosensitivity of the CMOS image sensor ) Characteristics.

The CMOS image sensor may include a pixel region and a circuit region formed on a semiconductor substrate. A plurality of photodiodes formed in a pixel region of the semiconductor substrate; a plurality of color filters formed corresponding to each of the plurality of photodiodes to pass light of a specific wavelength band; and a plurality of lenses Lt; / RTI > At least one driving circuit for driving the CMOS image sensor may be formed in the circuit region of the semiconductor substrate.

In recent years, CMOS image sensors have been manufactured with the BIS structure. However, in the CMOS image sensor of the BIS structure, heat or noise generated from the driving circuit of the circuit region can be easily transferred to the pixel region through the semiconductor substrate. Accordingly, the temperature and the dark current of the plurality of photodiodes in the pixel region are increased, and image defects such as dark shading or the like may be caused. In addition, the noise transmitted from the circuit region to the pixel region may deteriorate the image quality of the image sensor.

An object of the present invention is to provide an image sensor capable of blocking heat transmitted from a circuit region.

Another object of the present invention is to provide an image sensing system including such an image sensor.

According to an aspect of the present invention, there is provided an image sensor comprising: a semiconductor substrate; a pixel array portion formed in a pixel region defined in the semiconductor substrate, the pixel array portion including a plurality of photoelectric conversion portions; A plurality of driving circuits formed in the region and at least one thermal blocking portion formed between the pixel region and the circuit region of the semiconductor substrate and for blocking the heat generated in the circuit region from being transmitted to the pixel region through the semiconductor substrate .

According to another aspect of the present invention, there is provided an image sensing system including: an image sensor for sensing light and generating an image signal; a CPU for controlling operation of the image sensor; and an image sensor And a memory for storing the provided video signal.

The image sensor and the image sensing system including the image sensor according to the embodiment of the present invention can prevent the heat generated from the circuit area from being transmitted to the pixel area by forming a heat shielding area between the pixel area and the circuit area of the image sensor In addition, by blocking the heat generated from the circuit region from being transmitted to the pixel region, the operation efficiency of the image sensor can be increased.

In order to fully understand the present invention and the operational advantages of the present invention and the objects achieved by the embodiments of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate embodiments of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings.

The image sensor according to embodiments of the present invention includes a CCD (Charge Coupled Device) and a CMOS image sensor. Here, the CCD has less noise and image quality than a CMOS image sensor, but requires a high voltage and is expensive. The CMOS image sensor is easy to operate and can be implemented by various scanning methods. In addition, since the signal processing circuit can be integrated on a single chip, the product can be miniaturized and the CMOS process technology can be used in a compatible manner, which can reduce the manufacturing cost. Power consumption is also very low, making it easy to apply to products with limited battery capacity. Therefore, a CMOS image sensor will be described below as an image sensor of the present invention. However, it goes without saying that the technical idea of the present invention can be applied to a CCD as it is.

FIG. 1 is a schematic layout view of an image sensor according to an embodiment of the present invention, and FIG. 2 is a circuit diagram of a unit pixel of the pixel array unit shown in FIG.

1 and 2, an image sensor 500 according to an exemplary embodiment of the present invention includes a pixel region A and a circuit region B formed on a semiconductor substrate 101, and at least one heat shielding portion 200a , And 200b.

In the pixel region A, a plurality of photoelectric conversion units may be arranged to form the pixel array unit 100. Each of the plurality of photoelectric conversion units of the pixel array unit 100 may be arranged in a matrix form.

The pixel array unit 100 can absorb light incident from the outside and accumulate electric charges corresponding to the light amount. For example, the pixel array unit 100 may include a plurality of photoelectric conversion elements formed of a photo diode, a photo transistor, a photo gate, a pinned photodiode (PPD) And the like. In this embodiment, as one example, each of the plurality of photoelectric conversion units of the pixel array unit 100 is described as an example of a photodiode, but the present invention is not limited thereto.

Referring to FIG. 2, one unit pixel of the pixel array unit 100 includes a photoelectric conversion unit 110, a charge detection unit 120, a charge transfer unit 130, a reset unit 140, an amplification unit 150, And a selection unit 160. FIG. In this embodiment, the unit pixel has the four transistor structure, but it may have the transistor structure of N (N is a natural number, for example, three or five).

The photoelectric conversion unit 110 can absorb the incident light and accumulate the electric charge corresponding to the absorbed amount of light.

The charge detection unit 120 may be a floating diffusion region (FD), and may receive charge accumulated in the photoelectric conversion unit 110. Since the charge detection section 120 has a parasitic capacitance, the charge can be stored cumulatively. The charge detection unit 120 is electrically connected to the gate of the amplification unit 150 and can control the amplification unit 150.

The charge transfer unit 130 can transfer charge from the photoelectric conversion unit 110 to the charge detection unit 120. [ The charge transfer section 130 may be generally composed of one transistor and may be controlled by the charge transfer signal TG.

The reset unit 140 may reset the charge detection unit 120 periodically. The source of the reset unit 140 is connected to the charge detection unit 120, and the drain thereof is connected to the power source Vdd. Also, the reset unit 140 can be driven in response to the reset signal RST.

The amplifying unit 150 serves as a source follower buffer amplifier in combination with a constant current source (not shown) located outside the unit pixel 100. The amplifying unit 150 amplifies the voltage that changes in response to the voltage of the charge detecting unit 120 May be output to the vertical signal line 162. The source is connected to the drain of the selection unit 160, and the drain is connected to the power source Vdd.

The selection unit 160 can select the unit pixel 100 to be read in units of rows. The selection unit 160 is driven in response to the selection signal ROW, and the source is connected to the vertical signal line 162. [

The driving signal lines 131, 141, and 161 of the charge transfer section 130, the reset section 140, and the selection section 160 are driven in the row direction (horizontal direction) so that the unit pixels included in the same row are simultaneously driven Can be extended.

Referring again to FIG. 1, a plurality of driving circuits 400 may be located in the circuit area B of the image sensor 500, respectively. The plurality of driver circuits 400 may include, but is not limited to, a row decoder (not shown), an ADC (not shown) or a controller (not shown).

The circuit region B may be formed adjacent to the pixel region A and each of the plurality of driver circuits 400 may be formed on the same semiconductor substrate 101 as the pixel array portion 100. [

The plurality of driving circuits 400 may generate and output a driving signal for driving the pixel array unit 100 or a control signal for controlling the operation of the pixel array unit 100.

The thermal (or noise) blocking portions 200a and 200b may be formed on the semiconductor substrate 101 to extend in the first direction or the second direction. The thermal shut-off portions 200a and 200b include a first thermal cut-off portion 200a and a plurality of drive circuits 400 of the circuit region B, which can physically separate the pixel region A and the circuit region B, And a second heat intercepting portion 200b that can physically separate each of them.

The first row blocking portion 200a may be formed between the pixel region A and the circuit region B of the semiconductor substrate 101. [ For example, the first row interrupter 200a may be formed to surround the pixel region A so that the pixel region A and the circuit region B can be separated.

The first row interrupter 200a can prevent the heat or noise generated from the plurality of driving circuits 400 of the circuit area B from being transmitted to the plurality of photoelectric converters of the pixel area A. [

The second row interrupter 200b may be formed in the circuit region B of the semiconductor substrate 101 and may include a plurality of driving circuits 400, (400). ≪ / RTI >

The second row interrupter 200b can prevent the heat or noise generated from one driving circuit among the plurality of driving circuits 400 in the circuit area B from being transmitted to another adjacent driving circuit .

The first heat shielding part 200a and the second heat shielding part 200b may be formed by etching the semiconductor substrate 101 with a predetermined width.

Hereinafter, an image sensor according to an embodiment of the present invention will be described in detail with reference to FIGS. 3 and 4. FIG.

FIG. 3 is a cross-sectional view of the image sensor shown in FIG. 1 taken along lines III-III 'and III' to III ", and FIG. 4 is a cross-sectional view of the image sensor of FIG. 1 according to another embodiment of FIG.

Although the image sensors 500 and 500 'are formed in a BIS (Back-Side Illumination Sensor) structure in the present embodiments, the present invention is not limited thereto. For example, the image sensors 500 and 500 'may be formed as a front-side illumination sensor (FIS) structure using a silicon on insulator (SOI) semiconductor substrate.

1, 3, and 4, an image sensor 500, 500 'according to an embodiment of the present invention includes a first semiconductor substrate 101a in which a pixel region A and a circuit region B are defined, And a second semiconductor substrate 101b bonded to the first semiconductor substrate 101a. Here, the second semiconductor substrate 101b may have a greater thickness than the first semiconductor substrate 101a.

A plurality of wiring patterns 310 and 320 may be formed between the first semiconductor substrate 101a and the second semiconductor substrate 101b and each of the wiring patterns 310 and 320 may include an insulating film structure 330, For example, an insulating film structure 330 composed of at least one insulating film.

Referring to FIGS. 1 and 3, a pixel region A and a circuit region B may be defined in the first semiconductor substrate 101a. The photoelectric conversion portion 110R may be formed in the pixel region A to constitute the pixel array portion 100 and at least one drive circuit such as the first drive circuit 401 or the second The driving circuit 402 can be formed.

The photoelectric conversion portion 110R formed in the pixel region A of the first semiconductor substrate 101a may include an N-type photodiode 111R and a P + -type pinning layer 113R. The photoelectric conversion unit 110R receives light from a microlens 350, which will be described later, for example, a microlens 350 positioned to correspond to the photoelectric conversion unit 110R on the rear surface of the first semiconductor substrate 101a, . ≪ / RTI >

The photoelectric conversion portion 110R can be separated from other adjacent photoelectric conversion portions (not shown) by an element isolation region STI formed in the first semiconductor substrate 101a. The device isolation region STI may be a field oxide (FOX) or a shallow trench isolation (STI) using a LOCOS (LOCal Oxidation of Silicon) method, for example.

A charge transfer section 130 may be formed on the photoelectric conversion section 110R and transistors corresponding to the charge detection section 120, the reset section 140, the amplification section 150 and the selection section 160 may be formed .

The first driving circuit 401 and the second driving circuit 402 may be formed in the circuit region A of the first semiconductor substrate 101a. The first driving circuit 401 and the second driving circuit 402 may be formed adjacent to the above-described photoelectric conversion portion 110R.

The first driving circuit 401 of the pixel region A or the upper portion of the charge transfer portion 130 or the circuit region B of the photoelectric conversion portion 110R or the upper portion of the second driving circuit 402 At least one insulating layer structure 330 may be formed to cover the entire surface of the first semiconductor substrate 101a.

The first semiconductor substrate 101a is covered on the upper portion of the photoelectric conversion portion 110R, the upper portion of the charge transfer portion 130, the upper portion of the first driving circuit 401 or the upper portion of the second driving circuit 402 An interlayer insulating film 331 may be formed. The interlayer insulating film 331 may be formed of an oxide film or a nitride film.

A plurality of wiring patterns 310 and 320 may be formed on the interlayer insulating film 331. Each of the plurality of wiring patterns 310 and 320 may be formed as a single layer, or may be formed as a multilayer of two or three layers. In this embodiment, as one example, a plurality of wiring patterns 310 and 320 are shown including first wiring patterns 311 and 321 and second wiring patterns 313 and 323, respectively.

Each of the plurality of wiring patterns 310 and 320 may be formed in the pixel region A or the circuit region B of the first semiconductor substrate 101a. That is, each of the plurality of wiring patterns 310 and 320 is formed on the upper portion of the photoelectric conversion portion 110R of the pixel region A or on the upper portion of the first driving circuit 401 or the circuit region B of the circuit region B, The second driving circuit 402 of FIG.

The first wiring patterns 311 and 313 of each of the plurality of wiring patterns 310 and 320 may be formed on the interlayer insulating film 331. [ The first wiring patterns 311 and 313 may be formed of aluminum (Al), tungsten (W), copper (Cu), or the like.

A first metal interlayer insulating film 333 may be formed on the first wiring patterns 311 and 313 or on the interlayer insulating film 331. The first metal interlayer insulating film 333 may be formed of an oxide film or a nitride film.

Second wiring patterns 313 and 323 may be formed on the first metal interlayer insulating film 333. The second wiring patterns 313 and 323 of each of the plurality of wiring patterns 310 and 320 may be formed to be parallel to the first wiring patterns 311 and 313, (311, 313). The second wiring patterns 313 and 323 may be formed of the same material as the first wiring patterns 311 and 313.

A second metal interlayer insulating film 335 may be formed on the second wiring patterns 313 and 323 or on the first metal interlayer insulating film 333. The second metal interlayer insulating film 335 may be formed of the same material as the first metal interlayer insulating film 333.

The first metal interlayer insulating film 333 and the second metal interlayer insulating film 335 are formed of a material such as FOX (Flowable Oxide), HDP (High Density Plasma), TOSZ (Tonen SilaZene), SOG ) Or the like.

A passivation film 337 may be formed on the second metal interlayer insulating film 335. The passivation film 337 can protect the wiring patterns 310 and 320 or the photoelectric conversion portion 110R or the first driving circuit 401 or the second driving circuit 402 formed in the lower portion, As shown in FIG.

The second semiconductor substrate 101b may be bonded to the upper portion of the passivation film 337. [ The second semiconductor substrate 101b may be formed of the same material as the first semiconductor substrate 101a.

Meanwhile, the first semiconductor substrate 101a may be ground (or cut) to a predetermined thickness. The image sensor 500 of the present embodiment has a BIS structure, for example, a structure in which light is incident from the backside of the first semiconductor substrate 101a from the outside. Therefore, the light sensitivity of the image sensor 500, The first semiconductor substrate 101a may be ground to a predetermined thickness in order to improve the sensitivity. Accordingly, the first semiconductor substrate 101a may have a thickness smaller than that of the second semiconductor substrate 101b. For example, the first semiconductor substrate 101a may be ground to have a thickness of about 10 mu m or less.

A color filter such as a red color filter 340R is formed on the back surface of the pixel region A of the first semiconductor substrate 101a on which the photoelectric conversion portion 110R is formed, And a microlens 350 may be formed on the rear surface of the red color filter 340R at a position corresponding to the photoelectric conversion portion 110R. The microlens 350 may be formed of, for example, a TMR-based resin and an MFR-based resin.

The heat shielding portions 200a and 200b may be formed between the pixel region A and the circuit region B of the first semiconductor substrate 101a or may be formed between the first driving circuit 401 May be formed between the second driving circuit 402.

The heat shielding portions 200a and 200b may block the heat or noise generated from the first driving circuit 401 of the circuit region B from being transmitted to the photoelectric conversion portion 110R of the pixel region A. [ In addition, the heat shielding portions 200a and 200b can prevent the heat generated from the second driving circuit 402 from being transmitted to the first driving circuit 401. [

For example, the heat shielding parts 200a and 200b may include a first heat shielding part 200a and a second heat shielding part 200b.

The first row interrupter 200a can physically separate the pixel region A and the circuit region B formed in the first semiconductor substrate 101a. The first row interrupter 200a may be formed by etching the first semiconductor substrate 101a between the pixel region A and the circuit region B with a predetermined width d1. For example, the first heat shielding portion 200a may have an etching width d1 of approximately 1 to 10 mu m, and the etching depth of the first heat shielding portion 200a may be equal to the thickness of the first semiconductor substrate 101a can do.

The first row interrupter 200a blocks the heat or noise generated from the first driving circuit 401 of the circuit region B from being transmitted to the pixel region A through the first semiconductor substrate 101a, The operation of the photoelectric conversion portion 110R of the region A can be protected. The inside of the first heat shielding portion 200a may be filled with air.

The second row blocking portion 200b can physically separate the first driving circuit 401 and the second driving circuit 402 of the circuit region B formed in the first semiconductor substrate 101a. The second row blocking portion 200b may be formed by etching the first semiconductor substrate 101a between the first driving circuit 401 and the second driving circuit 402 with a predetermined width d2. For example, the second heat shielding portion 200b may have an etching width d2 of approximately 1 to 10 mu m, and the etching depth of the second heat shielding portion 200b may be equal to the thickness of the first semiconductor substrate 101a can do.

The second row blocking unit 200b prevents the heat or noise generated from the second driving circuit 402 in the circuit area B from being transmitted to the first driving circuit 401 through the first semiconductor substrate 101a The operation of the first driving circuit 401 can be protected. The inner portion of the second row blocking portion 200b may be filled with air.

Referring to FIG. 4, the image sensor 500 'according to another embodiment of the present invention may have the same structure as the image sensor 500 shown in FIG. 3 except for one.

For example, in the image sensor 500 'shown in FIG. 4, the inside of the heat interrupting parts 200a' and 200b ', that is, the first heat interrupting part 200a' and the second heat interrupting part 200b ' 3, except that the material 210 of the first semiconductor substrate 101a is filled with an oxide-based material 210 having a lower conductivity (e.g., thermal conductivity) than the material 210 of the first semiconductor substrate 101a ). ≪ / RTI >

In other words, the image sensor 500 'shown in FIG. 4 includes a first semiconductor substrate 101a having a first heat shielding portion 200a' and a second heat shielding portion 200b ' And filling the oxide-based material 210 having a low conductivity into the inside of the portion.

Accordingly, the first row interrupter 200a 'is configured such that the heat or noise generated from the first driving circuit 401 of the circuit region B is transmitted to the pixel region A through the first semiconductor substrate 101a And the second row interrupting portion 200b 'can block the heat or noise generated from the second driving circuit 402 of the circuit region B through the first semiconductor substrate 101a by the first driving circuit 401 As shown in FIG.

The first semiconductor substrate 101a may be formed with etch widths d1 and d2 of a predetermined width, for example, 1 to 10 mu m, respectively, in the first heat shielding portion 200a 'and the second heat shielding portion 200b' And the etching depth may be the same as the thickness of the first semiconductor substrate 101a.

In this embodiment, as one example, the oxide-based material 210 is filled in each of the first and second heat shielding parts 200a 'and 200b', but the present invention is not limited thereto . For example, each of the first and second heat blocking portions 200a 'and 200b' may be filled with a material having a conductivity lower than that of the first semiconductor substrate 101a.

The remaining components of the image sensor 500 'shown in FIG. 4, for example, the photoelectric conversion portion 110R, the first driving circuit 401, the second driving circuit 402, the insulating film structure 330, The patterns 310 and 320 and the second semiconductor substrate 101b are the same as those of the image sensor 500 shown in FIG. 3, and a detailed description thereof will be omitted.

5 is a schematic diagram illustrating an image sensing system including an image sensor in accordance with embodiments of the present invention.

The image sensing system 600 may illustrate, for example, a computer system, a camera system, a scanner, a mechanized clock system, a navigation system, a video phone, a supervisory system, an autofocus system, a tracking system, But is not limited thereto.

5, a computer system that is a type of image sensing system 600 includes a bus 520, a central processing unit (CPU) 510, an image sensor 500 or 500 ', and a memory 530 can do.

Also, although not shown in the drawing, the image sensing system 600 may further include an interface (not shown) connected to the bus 520 to communicate with the outside. The interface may be, for example, an I / O interface, and may be a wireless interface.

The CPU 510 may generate a control signal to control the operation of the image sensor 500 or 500 'and may provide a control signal to the image sensor 500 or 500' via the bus 520 .

The image sensor 500 may include a pixel array unit 100 and at least one driving circuit 400 as described above with reference to FIGS. 1 to 4. The image sensor 500 may include a control signal And converts the light into an electrical signal to generate a video signal.

The memory 530 receives the image signal output from the image sensor 500 or 500 'through the bus 520 and stores the received image signal.

The image sensor 500 or 500 'may be integrated with the CPU 510 and the memory 530. In some cases, a digital signal processor (DSP) may be integrated together, Only the sensor 500 or 500 'may be integrated on a separate chip.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS A brief description of each drawing is provided to more fully understand the drawings recited in the description of the invention.

1 is a schematic layout diagram of an image sensor according to an embodiment of the present invention.

2 is a circuit diagram of a unit pixel of the pixel array unit shown in FIG.

FIG. 3 is a cross-sectional view of the image sensor shown in FIG. 1 taken along lines III-III 'and III' -III ''.

Figure 4 is a cross-sectional view of the image sensor of Figure 1 according to another embodiment of Figure 3;

5 is a schematic diagram illustrating an image sensing system including an image sensor in accordance with embodiments of the present invention.

Claims (10)

A semiconductor substrate including a pixel region and a circuit region adjacent to the pixel region; A pixel array portion formed in the pixel region defined in the semiconductor substrate, the pixel array portion including a plurality of photoelectric conversion portions; A plurality of drive circuits formed in the circuit region defined in the semiconductor substrate; And a trench that is formed between the pixel region and the circuit region and surrounds the pixel array portion, wherein at least one thermal block is provided for blocking heat generated in the circuit region from being transmitted to the pixel region through the semiconductor substrate part; And And a microlens disposed at a position corresponding to the pixel region so as not to overlap with the at least one heat shielding portion. The heat exchanger according to claim 1, An image sensor formed between the pixel region of the semiconductor substrate and the circuit region or formed between each of the plurality of driver circuits of the circuit region of the semiconductor substrate. The method according to claim 1, Wherein the heat shielding portion is formed by etching the semiconductor substrate with a width of 1 to 10 mu m. The method according to claim 1, Wherein the inside of the heat shield is filled with an oxide-based material. A first semiconductor substrate including a pixel region and a circuit region adjacent to the pixel region; A photoelectric conversion unit formed in the pixel region of the first semiconductor substrate; A plurality of driver circuits formed in the circuit region of the first semiconductor substrate; At least one thermal cut-off portion formed between the pixel region and the circuit region, the at least one thermal cut-off portion including a trench surrounding the photoelectric conversion portion, and blocking heat generated from the plurality of drive circuits from being transferred to the photoelectric conversion portion; A microlens disposed at a position corresponding to the pixel region so as not to overlap with the at least one heat shielding portion; A wiring pattern formed on the first semiconductor substrate; And And a second semiconductor substrate which is bonded to an upper portion of the wiring pattern and has a thickness larger than that of the first semiconductor substrate. 6. The apparatus according to claim 5, An image sensor formed between the photoelectric conversion portion of the first semiconductor substrate and the plurality of drive circuits or formed between each of the plurality of drive circuits of the first semiconductor substrate. 6. The method of claim 5, Wherein the heat shielding portion is formed by etching the first semiconductor substrate with a width of 1 to 10 mu m. 6. The method of claim 5, Wherein the inside of the heat shield is filled with an oxide-based material. An image sensor for sensing light and generating a video signal; A CPU for controlling an operation of the image sensor; And And a memory for storing the image signal provided from the image sensor controlled by the CPU, Wherein the image sensor comprises: A semiconductor substrate including a pixel region and a circuit region adjacent to the pixel region; A pixel array portion formed in the pixel region defined in the semiconductor substrate, the pixel array portion including a plurality of photoelectric conversion portions; A plurality of drive circuits formed in the circuit region defined in the semiconductor substrate; And a trench that is formed between the pixel region and the circuit region and surrounds the pixel array portion, wherein at least one thermal block is provided for blocking heat generated in the circuit region from being transmitted to the pixel region through the semiconductor substrate part; And And a microlens disposed at a position corresponding to the pixel region so as not to overlap with the at least one heat shielding portion. An image sensor for sensing light and generating a video signal; A CPU for controlling an operation of the image sensor; And And a memory for storing the image signal provided from the image sensor controlled by the CPU, Wherein the image sensor comprises: A first semiconductor substrate including a pixel region and a circuit region adjacent to the pixel region; A photoelectric conversion unit formed in the pixel region of the first semiconductor substrate; A plurality of driver circuits formed in the circuit region of the first semiconductor substrate; At least one thermal cut-off portion formed between the pixel region and the circuit region, the at least one thermal cut-off portion including a trench surrounding the photoelectric conversion portion, and blocking heat generated from the plurality of drive circuits from being transferred to the photoelectric conversion portion; A microlens disposed at a position corresponding to the pixel region so as not to overlap with the at least one heat shielding portion; A wiring pattern formed on the first semiconductor substrate; And And a second semiconductor substrate which is connected to an upper portion of the wiring pattern and has a larger thickness than the first semiconductor substrate.

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