KR101531843B1 - Method of manufacturing ntegrated circuit device package - Google Patents

Method of manufacturing ntegrated circuit device package Download PDF

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Publication number
KR101531843B1
KR101531843B1 KR1020130049539A KR20130049539A KR101531843B1 KR 101531843 B1 KR101531843 B1 KR 101531843B1 KR 1020130049539 A KR1020130049539 A KR 1020130049539A KR 20130049539 A KR20130049539 A KR 20130049539A KR 101531843 B1 KR101531843 B1 KR 101531843B1
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KR
South Korea
Prior art keywords
integrated circuit
flexible
circuit device
substrate
device package
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KR1020130049539A
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Korean (ko)
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KR20140130935A (en
Inventor
임재성
김주형
Original Assignee
하나 마이크론(주)
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Priority to KR1020130049539A priority Critical patent/KR101531843B1/en
Publication of KR20140130935A publication Critical patent/KR20140130935A/en
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Abstract

A method of fabricating an integrated circuit device package includes providing an integrated circuit device having pads on an external surface thereof for electrical connection to the exterior; Forming an insulating film pattern having a contact hole for exposing the pad, the insulating film pattern being made of a flexible and flexible material which can be bent or folded on one surface of the integrated circuit device; Forming a flexible electrical wiring in the contact hole to be electrically connected to the pad; Thinning the other surface of the integrated circuit device to form a flexible integrated circuit device having a thickness that can be bent or folded; And attaching a substrate of flexible thickness and flexible material to the other surface of the flexible IC device so that the flexible IC device is packaged.

Description

[0001] The present invention relates to a method of manufacturing integrated circuit device packages,

The present invention relates to a method of fabricating an integrated circuit device package, and more particularly, to a method of fabricating an integrated circuit device package having a flexible structure that can be flexed and unfolded freely.

Currently, the electronics industry is broadening its application range. Accordingly, packaging technology for integrated circuit devices such as semiconductor memories is increasingly demanded for high capacity, thinning, miniaturization and the like, and various solutions for solving the problems are being developed. In particular, in recent years, flexible integrated circuit devices capable of flexing have been developed, and flexible integrated circuit device packages capable of flexing with the above-mentioned integrated circuit devices have been developed.

The applicant of the present invention invented the integrated circuit device package having the flexible structure mentioned above and applied for the patent application No. 10-2012-0043755 (hereinafter referred to as 'the reference document') on April 26, 2012. In the manufacture of the integrated circuit device package disclosed in the aforementioned cited document, the thinning process is performed on the integrated circuit device so that the integrated circuit device has a flexible structure, and then the wiring process for electrical connection with the integrated circuit device is performed. Particularly, laser drilling is performed in the wiring process.

However, as disclosed in the cited document, when the laser drilling or the like is performed after thinning the integrated circuit device, the integrated circuit device can be greatly damaged. This is because the thinning process implements a direct impacting process, such as laser drilling, on an integrated circuit device having a thin thickness by thinning.

Therefore, in the manufacture of the integrated circuit device package having the conventional flexible structure, it is possible to damage the contact circuit device package manufactured thereby by performing a process that can directly impact the integrated circuit device having a thin thickness, As a result, there is a problem that the reliability of the integrated circuit device package may be hindered due to the process stress.

It is an object of the present invention to provide an integrated circuit device package and a method of manufacturing the same that can minimize the impact applied to an integrated circuit device having a thin thickness.

According to an aspect of the present invention, there is provided a method of manufacturing an integrated circuit device package, the method including: providing an integrated circuit device having pads for electrical connection to an external surface; Forming an insulating film pattern having a contact hole for exposing the pad, the insulating film pattern being made of a flexible and flexible material which can be bent or folded on one surface of the integrated circuit device; Forming a flexible electrical wiring in the contact hole to be electrically connected to the pad; Thinning the other surface of the integrated circuit device to form a flexible integrated circuit device having a thickness that can be bent or folded; And attaching a substrate of flexible thickness and flexible material to the other surface of the flexible IC device so that the flexible IC device is packaged.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the thickness of the substrate may be 0.8 to 1.2 times the thickness of the insulating film pattern.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention mentioned above, the attachment of the substrate can be achieved by interposing a die attach bonding film between the other surface of the flexible integrated circuit element and the substrate have.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the thickness of the substrate including the die attach bonding film may be 0.8 to 1.2 times the thickness of the insulating film pattern.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the substrate is transferred by performing a transfer process such that a die attach bonding film is interposed between the other surface of the flexible IC device and the substrate ≪ / RTI >

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the integrated circuit device package is fabricated at a wafer level where a plurality of flexible integrated circuit elements are disposed on the same plane, And singing the flexible integrated circuit elements so that the flexible integrated circuit elements are separated from each other before the element is attached to the substrate.

Wherein the integrated circuit device package is manufactured at a wafer level in which a plurality of flexible integrated circuit elements are disposed on the same plane, and after the flexible integrated circuit element is attached to the substrate, the flexible integrated circuit elements are separated And may further comprise a step of singulating.

According to the method of manufacturing an integrated circuit device package of the present invention, a wiring process is performed in manufacturing an integrated circuit device package having a flexible structure, and then a process of thinning the integrated circuit device to have a thin structure is performed. That is, in the method of manufacturing an integrated circuit device package of the present invention, a wiring process is performed on an integrated circuit device having a relatively thick thickness. Particularly, in the case of a wiring process, a photolithography process is performed instead of laser drilling.

Therefore, in the case of the integrated circuit device package obtained by the manufacturing method of the present invention, since the impact applied to the integrated circuit device can be relatively reduced, the damage to the integrated circuit device can be minimized, It is expected that the reliability of the integrated circuit device package can be improved by sufficiently reducing it.

1 to 3 are cross-sectional views schematically showing a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.
4 is a cross-sectional view illustrating a method of fabricating an integrated circuit device package according to another embodiment of the present invention.
FIG. 5 is a structural view illustrating an example of a transfer process in the method of manufacturing the integrated circuit device package of FIG.
6 is a structural view for explaining another example of a transfer process in the method of manufacturing the integrated circuit device package of FIG.

While the present invention has been described in connection with certain exemplary embodiments, it is obvious to those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the invention. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the term "comprises" or "comprising ", etc. is intended to specify that there is a stated feature, figure, step, operation, component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

1 to 3 are cross-sectional views schematically showing a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.

Referring to FIG. 1, an integrated circuit device 40 having pads 43 for electrical connection to the outside is formed on one surface. Examples of the integrated circuit device 40 include semiconductor devices such as memory devices and non-memory devices, and active devices and passive devices. The integrated circuit device 40 can be obtained by forming circuit patterns and the like having various structures on the substrate 41 made of a silicon material.

An insulating film pattern 45 having contact holes exposing the pads 43 is formed on one surface of the integrated circuit device 40 on which the pads 43 are formed. The aforementioned insulating film pattern 45 can be obtained by forming an insulating film on one surface of an integrated circuit device on which the pad 43 is formed and then performing a photolithography process using the photoresist as a mask. It may also be obtained by performing a laser drilling process.

Particularly, in the present invention, processes such as a photolithography process, a laser drilling process, and the like are performed before the integrated circuit device 40 is formed into a flexible integrated circuit device having a flexible or foldable thickness to be described later. Thus, a small impact is applied to a flexible integrated circuit element compared to a photolithography process, a laser drilling process, and the like. This is because the photolithography process, the laser drilling process, and the like are performed on the integrated circuit device 40 having a relatively thick thickness as compared with the flexible integrated circuit device.

Therefore, as described in the present invention, since the photolithography process, the laser drilling process, and the like that can be impacted before forming the flexible integrated circuit device are performed, the reliability of the integrated circuit device package having the flexible structure, .

Also, in the case of the insulating film pattern 45 mentioned above, it is made of a flexible thickness and a flexible material which can be bent or folded. Thus, the insulating film pattern 45 may have a film structure.

Then, the electric wiring 46 is formed in the contact hole of the insulating film pattern 45. The formation of the electric wiring 46 is mainly achieved by filling a conductive material for forming the electric wiring 46 in the contact hole. Thus, the pad 43 is electrically connected by the electric wiring 46 mentioned above.

The electric wiring 46 mentioned above is also made of a flexible material. Thus, the electric wiring 46 can be made of a metal material having excellent ductility.

As described above, in the present invention, the insulating film pattern 45 and the electric wiring 46 are formed to have a flexible thickness and a flexible material so that the integrated circuit device package described later can have a flexible structure.

Referring to FIG. 2, the other surface of the integrated circuit device 40 is thinned. That is, the silicon substrate 41 is thinned so as to have a thin thickness. As described above, in the present invention, the integrated circuit element 40 is formed of a flexible integrated circuit element 53 having a thickness that can be bent or folded by thinning the other surface of the integrated circuit element 40. And reference numeral 55 denotes a silicon substrate having a thin thickness for fabricating the flexible integrated circuit element 53. [

Here, the thickness of the flexible integrated circuit element 53 which can be bent or folded may be about 1.0 to 50 mu m. That is, the integrated circuit device 40 is thinned to a thickness of about 1.0 to 50 μm. If the thickness is less than about 1.0 占 퐉, it is not preferable because the flexible integrated circuit element 53 is not easily handled because it is too thin, and if the thickness exceeds about 50 占 퐉, the flexible integrated circuit element 53 is bent It is not preferable because it has no foldable structure.

Referring to FIG. 3, flexible integrated circuit elements 53 are packaged. That is, the substrate 51 for packaging is attached to the other surface of the flexible IC device 53. The substrate 51 mentioned above is also made of a flexible thickness and a flexible material. Examples of the substrate 51 include a lead frame, a printed circuit board, and a flexible printed circuit board, which are made of a flexible thickness and a flexible material.

As described above, in the present invention, the substrate 51 made of a flexible and flexible material is attached to the other surface of the flexible integrated circuit element 53 so that the flexible integrated circuit element 53 is packaged, thereby obtaining the integrated circuit element package 63 . Particularly, since the integrated circuit device package 63 in the present invention is provided with the insulating film pattern 45 made of a flexible thickness and the flexible material, the electric wiring 46, the flexible integrated circuit element 53 and the substrate 51, The circuit element package 63 itself can be flexible. Thus, the integrated circuit device package 63 of the present invention can also have a bent or folded structure.

In the integrated circuit device package 63 manufactured according to the present invention, the thickness L2 of the insulating film pattern 53 and the thickness L1 of the substrate 51 must be related to each other. This is because when the tensile force is applied to the insulating film pattern 45 with the flexible integrated circuit element 53 as a neutral plane when the integrated circuit element package 63 is bent, a compressive force is applied to the substrate 51, If a compressive force is applied to the substrate 45, a tensile force is applied to the substrate 51. If the thickness L2 of the insulating film pattern 45 and the thickness L1 of the substrate 51 are not related to each other as described above, when the integrated circuit device package 63 is bent, (51) may be damaged.

Therefore, the thickness L1 of the substrate 51 is preferably about 0.8 to 1.2 times, more preferably about 0.9 to 1.1 times, based on the thickness L2 of the insulating film pattern 45. [

As described above, the present invention can be applied to an integrated circuit device (not shown) by performing a process for an electric wiring on an integrated circuit device 40 instead of the flexible integrated circuit device 53 in manufacturing the integrated circuit device package 63 having a flexible structure 40 can be relatively reduced, and as a result, damage caused by the process of the integrated circuit element 40 can be minimized.

4 is a cross-sectional view illustrating a method of fabricating an integrated circuit device package according to another embodiment of the present invention.

First, since the integrated circuit device package in FIG. 4 has the same structure as the integrated circuit device package in FIG. 3 except for the die attach bonding film, the same reference numerals are used for the same structures, and a detailed description thereof will be omitted .

4, a die attach film (DAF) 65 is interposed between the other surface of the flexible integrated circuit element 53 and the substrate 51, (51). That is, the flexible integrated circuit device 53 is packaged by using the die attach bonding film 65 to obtain the integrated circuit device package 63. In addition to the die attach bonding film 65, a double-sided tape or the like can also be used in the case of attaching the substrate at the time of packaging to obtain the integrated circuit device package 63 mentioned above.

In particular, when using the die attach bonding film 65, the thickness L3 of the substrate 51 may include the die attach bonding film 65. [ The thickness L3 of the substrate 51 including the die attach bonding film 65 is preferably about 0.8 to 1.2 times, more preferably about 0.9 to 1.1 times the thickness L2 of the insulating film pattern 45, It is more preferable that it is double.

The attachment of the substrate 51 using the die attach bonding film 65 is carried out in such a manner that the die attach bonding film 65 is sandwiched between the other surface of the flexible IC device 53 and the substrate 51 And the like.

Hereinafter, the transfer process for attaching the substrate 51 using the die-attach bonding film 65 will be described.

FIG. 5 is a structural view illustrating an example of a transfer process in the method of manufacturing the integrated circuit device package of FIG.

Referring to FIG. 5, a transfer material 200 to which a flexible integrated circuit element 53 is attached is provided on a first adhesive tape 203. Here, the first adhesive tape 203 may be provided so as to have an adhesive strength somewhat weaker than the original adhesive force of the first adhesive tape 203 by ultraviolet ray irradiation, heating, or the like. The first adhesive tape 203 mentioned above may include a curable adhesive tape which is weakened in adhesion when irradiated with ultraviolet rays or heated. Examples of the above-mentioned curable adhesive tape include an ultraviolet curable adhesive tape, a thermosetting adhesive tape and the like.

The first adhesive tape 203 has a structure in which the peripheral edge portion is supported by the ring frame 205. The transfer material 200 including the flexible integrated circuit element 53 attached to the first adhesive tape 203 on which the peripheral portion is supported by the ring frame 205 is placed on the plate 11. [

The plate 11 on which the transfer material 200 to which the flexible integrated circuit element 53 is attached is attached to the first adhesive tape 203 in a state of supporting the ring frame 205 by using the frame supporting portion 15 Tension can be applied to the first adhesive tape 203 by moving the chuck table 13 up and down. Here, applying tension to the first adhesive tape 203 is intended to more easily detach the flexible integrated circuit element 53 from the first adhesive tape 203.

Further, the plate 11 on which the transfer material 200 is placed is conveyed in the first direction. At this time, the transfer of the plate 11 may be performed by the plate 11 itself, or may be performed using the transfer unit 31 or the like.

The second adhesive tape 301 is fed and collected along the roller 21 of the attaching / detaching portion 19. At this time, the roller 21 of the attaching / detaching unit 19 may be provided so as to rotate in the second direction from the first direction. In addition, the supply and recovery of the second adhesive tape are made by the members denoted by reference numerals 23 and 25.

Here, the second adhesive tape 301 mentioned above may include a curable adhesive tape such as an ultraviolet curable adhesive tape, a thermosetting adhesive tape or the like which is the same as the first adhesive tape 203. In addition, in the case of the second adhesive tape 301, since the ultraviolet ray irradiation or heating is not performed, the adhesive force of the second adhesive tape 301 can be higher than that of the first adhesive tape 203.

As described above, the plate 11 is fed in the first direction and the attachment / detachment unit 19 is rotated in the second direction from the first direction to attach / detach the attachment / detachment unit 19 and the transfer material 200 in the first region The flexible integrated circuit element 53 is brought into contact. At this time, the adhesive force of the second adhesive tape 301 on the attaching / detaching unit 19 is greater than the adhesive force of the first adhesive tape 203 on which the flexible IC device 53 is attached, The flexible integrated circuit element 53 is transferred and attached to the second adhesive tape 301 because tension is applied.

The flexible integrated circuit element 53 to be transferred to the second adhesive tape 301 of the attaching / detaching unit 19 is moved in the second direction from the first direction in accordance with the rotation of the roller 21 of the attaching / detaching unit 19 Rotate. At this time, the original adhesive force of the second adhesive tape 301 is weakened by using the adhesive strength weakening portion 29. That is, ultraviolet ray irradiation or heating is performed on the second adhesive tape 301 by using the adhesive strength weakening section 29, so that the original adhesive force of the second adhesive tape 301 can be weakened. Thus, the second adhesive tape 301 can have a weakened adhesive force than the original adhesive force.

The flexible integrated circuit element 53 to be transferred to the second adhesive tape 301 is brought into contact with the substrate 51 which is transported in the second direction in the second direction in accordance with the rotation of the roller 21 as mentioned above.

As described above, by transferring the substrate 51 in the second direction and rotating the detachable attachment 19 in the second direction from the first direction, the substrate 51 and the second adhesive tape 301 The flexible integrated circuit element 53 to be attached is brought into contact. At this time, the adhesive force of the die attach bonding film 65, which is an adhesive portion for transferring the flexible integrated circuit element 53 to the second adhesive tape 301 to which the flexible integrated circuit element 53 is attached, The flexible integrated circuit element 53 is transferred and attached to the substrate 51 because of its size.

The flexible integrated circuit element 51 mentioned above can be transferred and attached from the first adhesive tape 203 of the transfer material 200 to the substrate 51. [

As described above, the substrate 51 can be attached to the other surface of the flexible IC device 53 by performing the transfer process described in the present invention.

The method of manufacturing an integrated circuit device package of the present invention is performed at a wafer level where a plurality of flexible integrated circuit elements 53 are disposed on the same plane.

Therefore, a sawing process, which is a process of separating the flexible IC elements 53, must be performed. Accordingly, in the present invention, before the flexible integrated circuit element 53 is attached to the substrate 51, the flexible integrated circuit elements 53 are singulated so that the flexible integrated circuit elements 53 are separated from each other, can do.

6 is a structural view for explaining another example of a transfer process in the method of manufacturing the integrated circuit device package of FIG.

First, since the transfer process in FIG. 6 is the same as the transfer process in FIG. 5 except for the singulation structure of the flexible integrated circuit elements, the same reference numerals are used for the same structures, and a detailed description thereof will be omitted.

6, a sawing process, which is a process of separating the flexible integrated circuit elements 53, is performed after attaching the flexible integrated circuit device 53 to the substrate 51. That is, after the flexible integrated circuit elements 53 are attached to the substrate 51, the flexible integrated circuit elements 53 are singulated so that the flexible integrated circuit elements 53 are separated from the flexible integrated circuit elements 53, You can do it.

5, when the flexible integrated circuit elements 53 are singulated before the transfer step, the flexible integrated circuit element 53 is subjected to the soaking process, and as shown in FIG. 6, The flexible integrated circuit elements 53 and the substrate 51 are subject to the sowing process when each flexible integrated circuit element 53 is singulated.

As described above, according to the present invention, after the wiring process is performed in manufacturing the integrated circuit device package having a flexible structure, the process of thinning the integrated circuit device to have a thin structure is performed to minimize the damage to the integrated circuit device, The reliability of the integrated circuit device package can be improved, and as a result, the improvement of the product competitiveness can be expected.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.

40: integrated circuit element 41, 55: silicon substrate
43: pad 45: insulating film pattern
46: electric wiring 51: substrate
53, 63: Flexible integrated circuit device
65: Film for die attach bonding

Claims (7)

Providing an integrated circuit device having a pad on an end thereof for electrical connection to the outside;
Forming an insulating film pattern having a contact hole for exposing the pad, the insulating film pattern being formed on one surface of the integrated circuit device so as to be bent or foldable and having a flexible material;
Forming a flexible electrical wiring in the contact hole to be electrically connected to the pad;
Forming a flexible integrated circuit device having a thickness of 0.1 to 50 탆 which is thin and foldable or foldable on the other side of the integrated circuit device; And
And attaching a substrate made of a flexible and flexible material to the other surface of the flexible IC device so that the flexible IC device is packaged,
Wherein the thickness of the substrate is 0.8 to 1.2 times the thickness of the insulating film pattern. delete The method of manufacturing an integrated circuit device package according to claim 1, wherein attachment of the substrate is achieved by interposing a die attach bonding film between the other surface of the flexible integrated circuit element and the substrate. 4. The method according to claim 3, wherein the thickness of the substrate including the die attach bonding film is 0.8 to 1.2 times the thickness of the insulating film pattern. The manufacturing method of an integrated circuit device package according to claim 3, wherein attachment of the substrate is achieved by performing a transfer process so that a film for die attach bonding is interposed between the other surface of the flexible IC device and the substrate Way. 2. The integrated circuit device package according to claim 1, wherein the integrated circuit device package is manufactured at a wafer level in which a plurality of flexible integrated circuit elements are disposed on the same plane,
Further comprising the step of singulation such that the flexible integrated circuit elements are separated before attaching the flexible integrated circuit elements to the substrate. 2. The integrated circuit device package according to claim 1, wherein the integrated circuit device package is manufactured at a wafer level in which a plurality of flexible integrated circuit elements are disposed on the same plane,
Further comprising the step of singulation of the flexible integrated circuit elements such that the flexible integrated circuit elements are separated after the flexible integrated circuit elements are attached to the substrate.
KR1020130049539A 2013-05-02 2013-05-02 Method of manufacturing ntegrated circuit device package KR101531843B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100331070B1 (en) * 1997-12-30 2002-05-10 마이클 디. 오브라이언 Structure of chip size semiconductor package and fabricating method thereof
KR100639752B1 (en) * 1997-04-04 2006-10-27 글렌 제이. 리디 Three dimensional structure memory
JP2012204557A (en) * 2011-03-25 2012-10-22 Teramikros Inc Semiconductor device, manufacturing method of the same, and mounting structure of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100639752B1 (en) * 1997-04-04 2006-10-27 글렌 제이. 리디 Three dimensional structure memory
KR100331070B1 (en) * 1997-12-30 2002-05-10 마이클 디. 오브라이언 Structure of chip size semiconductor package and fabricating method thereof
JP2012204557A (en) * 2011-03-25 2012-10-22 Teramikros Inc Semiconductor device, manufacturing method of the same, and mounting structure of semiconductor device

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