KR101531666B1 - Apparatus and Method of Film Polishing Using Plasma Immersion Ion Milling - Google Patents

Abstract

The present invention relates to an apparatus and a method for processing a surface of various films with low-temperature plasma intrusion ions using accelerated ions.
The present invention provides a plasma immersion ion processing apparatus and method for controlling the surface flatness and selective height of the deposition surface on a film, and a method of polishing the film in a vacuum state for a post process by applying the apparatus and the method of the present invention It is easy to mass-produce and can be used in various fields, especially functional or display field films.

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to an apparatus and a method for polishing a film using a plasma,

The present invention relates to an apparatus and a method for polishing a film using plasma, and more particularly, to an apparatus and a method for processing a surface of various films using low-temperature plasma inflow ions using accelerated ions.

In general, surface treatment using energy-containing ions is essential for semiconductor processing, MEMS and MEMS mass production, pattern transfer technology, and hard coating.

The ion collision is used in various fields such as cleaning, activation of the substrate surface, change in wettability, improvement in hardness, deposition of various films, and semiconductor doping process by ion implantation.

Usually all ion processing can be divided into two kinds as follows.

First, the ion beam is extracted from the ion source and sent to the substrate placed at a certain distance in the vacuum chamber. In order to obtain a desired result, the ion beam and the substrate are transferred separately or simultaneously, and the ion charge is transferred to the auxiliary electrode emitter. < / RTI >

Examples of such techniques include ion beam application deposition, ion beam etching or milling, and ion beam implantation.

Second, ions are accelerated to the inside of the sheath formed in front of the workpiece as a way of placing a workpiece in a plasma atmosphere and electrically biasing the workpiece to a negative potential at a constant value. Then, a bias supplied by a pulse or the like is used.

Examples of techniques belonging to this technical category include PVD, PECVD, PI3D, RIE, and the like.

Typically, ion etching or ion milling is one area of critical ion processing.

It is based on surface sputtering with energy-bearing ions.

A key feature of ion sputtering is the non-linear dependence of the sputtering rate on the ion incident angle.

It is applicable to both physical and reactive machining.

Many applications for ion processing include semiconductor processing, nanostructure formation, surface structure formation, and surface roughness improvement.

Ion beam machining is a cutting-edge processing technology that has been applied as a final step in the mass production of optical components.

Surface roughness improvement applications include the improvement of micro surface roughness values at critical interfaces such as optical components and high power devices, or specimen preparation such as SIMS and TEM.

1 is a conceptual view of an ion beam etching process for a cylindrical workpiece wherein the ribbon shaped ion beam from a linear ion source is directed into the vacuum chamber along the axis of the rotating workpiece.

2 is a conceptual view of an ion beam etching process for a planar workpiece in which a circular beam emerging from an ion source is directed to the inside of the vacuum chamber for a workpiece rotating while being inclined by an arbitrary angle, Thereby neutralizing the charged ions.

FIG. 3 is a conceptual view of a surface polishing process of a cylindrical substrate by plasma immersion ion processing, wherein the lid surrounding the workpiece electrically connected to the workpiece has a rectangular cross-section, and a grid-shaped electrode is attached to four surfaces .

At this time, the width of the grating is equal to the diameter of the workpiece, and the length of the grating is equal to the length of the workpiece.

Prior art related to such a plasma immersion ion processing method and related equipment is disclosed in Korean Patent Publication No. 10-2011-0057295, US Patent No. 4,278,493, and US Patent No. 5,693,376.

Recently, many researches have been carried out on film processing in a plasma atmosphere.

Normally, in order to form a precise pattern such as a nano pattern on the surface of a film, it is necessary to increase the flatness of the film surface itself, and there is a limitation in manufacturing a smooth film at the time of producing the film.

In addition, when metal or the like is deposited on a film, it is difficult to cut the film precisely as desired.

Accordingly, it is an object of the present invention to provide a plasma immersion ion processing apparatus and method for controlling the surface flatness and the selective height of the deposition surface on a film. By applying such an apparatus and a method, It is easy to mass-produce and can be used in various fields, particularly in functional or display field films.

In order to achieve the above object, the apparatus and method for polishing a film using plasma provided by the present invention have the following features.

The film polishing apparatus using the plasma includes a vacuum chamber electrically insulated and filled with plasma, a roll driving device installed in the vacuum chamber and for advancing the film in one direction by a roll-to-roll method, A cover including a slot disposed facing the surface and having a conductive property to separate the film from the plasma and electrically connected to the film side, and a power supply device for supplying power to the cover and the film side .

Therefore, in the film polishing apparatus using the plasma, a bias having a relatively negative value relative to the plasma potential is provided to the film and the cover, the cover serves as an extraction electrode having a slot, The surface of the film is polished because the accelerated ions in the surrounding sheath are attracted to the gap between the cover and the film and collide with the surface of the film which proceeds in one direction.

Here, the roll driving device for transporting the film may be composed of a supply roll, a recovery roll, and one or two idle rolls arranged in a triangular or square shape.

As an example of the slot of the cover, the slot is provided at a position where the roll-side contact portion of the film faces the front, so that the ions passing through the slot collide against the surface of the film being supported while being supported on the roll side .

As another example of the slot of the cover, the slot is provided at a position facing the film at the same height as the linear path progression of the film, so that the ions passing through the slot can change the thickness of the film to a necessary thickness As shown in FIG.

In order to accomplish the above object, the present invention provides a method for polishing a film using plasma.

The method of polishing a film using plasma includes the steps of disposing a roll driving device for advancing a film in one direction in a roll-to-roll manner in an electrically insulated vacuum chamber; Providing a low-density, high-density plasma inside the vacuum chamber; applying a negative bias to the film and the lid and moving the film in one direction using a roll driving device; And a step of processing the film by accelerating the ions accelerated into the sheath formed around the cover through the extraction electrode to collide with the surface of the film moving in one direction while being drawn into the space between the cover and the film.

Here, in the step of processing the film, the ions passing through the slot provided at the position facing the roll-side contact portion of the film are supported on the roll side while being collided against the surface of the film being advanced, The surface can be polished.

In the step of processing the film, ions passing through a slot provided at a position facing the thickness of the film at the same height as the linear path progression line of the film can cut the thickness of the film to a required thickness .

The film polishing apparatus and method using the plasma provided by the present invention have the following advantages.

First, it is possible to make the surface of the substrate for a micro or nano pattern, especially the surface of the film, to a surface roughness of the nanometer, and to precisely cut as much thickness as necessary through control of process conditions.

That is, a flatness of about nanometers can be realized in a film, and even when metal or the like is deposited on the film, the surface of the film can be polished with nano-precision precision, and the cut surface at this time can be ensured very smoothly.

Secondly, since the film can be polished in a vacuum state in accordance with a post-process, it is not only easy to mass-produce but also can be effectively applied to various fields, especially functional or display field films.

Third, contamination that may occur during the process can be minimized because the whole process is performed in a vacuum state.

1 is a conceptual view of an ion beam etching process for a cylindrical workpiece
2 is a conceptual view of an ion beam etching process for a planar workpiece
3 is a conceptual view of a surface polishing process of a cylindrical substrate by plasma immersion ion processing
FIG. 4 is a conceptual diagram illustrating a process for improving surface roughness of a film in a film polishing apparatus and method using plasma according to an embodiment of the present invention.
5 is a conceptual diagram showing a process for precisely polishing the thickness of a film in a film polishing apparatus and method using plasma according to an embodiment of the present invention

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 4 is a conceptual view illustrating a process for improving the surface roughness of a film in the apparatus and method for polishing a film using plasma according to an embodiment of the present invention, and FIG. 5 is a schematic view of a film polishing apparatus using plasma, And a process of precisely polishing the thickness of the film in the method.

As shown in FIGS. 4 and 5, the plasma processing apparatus using the immersion ions is for polishing the surface of the film continuously fed in a roll-to-roll system and cutting the film thickness, A roll driving device 11 installed inside the vacuum chamber 10 as a means for continuously feeding the film, a roll driving device 11 arranged along the surface of the film on at least one side, that is, A slot 12 disposed at a position facing the surface or the thickness of the film is provided and is connected to the roll driving device 11 including the film electrically while separating the film from the plasma by surrounding the film A cover 13, a power supply unit 14 for supplying power to the film and the cover 15, and the like.

The cover 13 may have various shapes, for example, a rectangular or triangular shape. The bias applied to the cover 13 and the film 13 may be RF magnetic bias, monopole repetitive pulse bias, A bi-polar repetitive pulse bias in which positive charges can be canceled with negative charges every pulse, and the like can be applied.

In addition, an ICP source having an internal antenna, an inert gas such as argon, a reactive gas, or the like may be applied to the plasma formed in the vacuum chamber 10, for example, a low-temperature high-density plasma.

In the case of such a vacuum chamber 10, a pump (not shown) capable of making a high vacuum inside the chamber and a gas shower (not shown) to be sprayed along the lid 15 may be included.

In particular, the roll driving device 11 is provided as a means for continuously feeding the film to be processed.

The roll driving device 11 is a device for advancing the film in one direction by a roll-to-roll method, and includes a supply roll 15 for releasing the film, a recovery roll 16 for winding the processed film, And a plurality of idle rolls 17 for guiding the locus and ensuring the path of travel are arranged in a predetermined shape.

As an example, in the case of a structure in which one supply roll 15 and one recovery roll 16 and one idle roll 17 are combined, each roll can be arranged in a triangular shape and used.

As an example provided in the present invention, in the case of a structure in which one supply roll 15 and a recovery roll 16 and two idols rolls 17 are combined, each roll can be arranged in a rectangular shape and used do.

As a result, during operation of the roll driving device 11, the film can be transported along a progressing trajectory of a triangle or a quadrangle while spanning each roll.

Therefore, the roll driving device 11 and the film conveyed by the roll driving device 11 are disposed inside the electrically insulated vacuum chamber 10. [

Then, the film is accommodated in the lid 13 and isolated from the plasma.

A slot 12 is formed in the lid 13, and the slot 12 is disposed along the surface of the film and is spaced apart from the film.

For example, the slot 12 of the cover 13 is formed at a position facing the roll-side contact portion of the film, that is, a portion where the roll-over portion is viewed from the front.

As a result, ions passing through the slots can collide against the surface of the film being supported while being supported on the roll side. As a result, in the state where the film is supported on the roll side through the back surface, ions collide with the surface of the film, Can be performed more efficiently.

Further, as another example, the slot 12 of the lid 13 may be positioned at the same height as the linear path progression line of the film, at a position facing the film from the front, that is, from the opposite side in the direction in which the film advances And is formed at the viewing position.

As a result, the ions passing through the slot collide with each other while grasping the thickness of the film, and as a result, the thickness of the film can be cut by a required thickness.

Further, a negative potential sufficient to cause sputtering is provided on the film side and the cover 13 electrically connected to each other.

Ions from the plasma are accelerated into a sheath formed between the lid 13 and the plasma layer and pass through the slot 12 to form a beam of ribbon waveform within the gap between the film and the lid 13 The film surface is collided with the surface of the film so as to cause a decrease in the surface roughness of the film.

The electric bias may be DC (direct current), single-pole or double-pole pulse or RF bias.

Sputtering is also performed physically when an inert gas such as argon forms a plasma or when a plasma is formed from the reactive gas.

Meanwhile, a method of processing using the plasma infiltrated ions provided in the present invention will be described as follows.

The processing method using the plasma immersion ions has a negative value relative to the plasma potential to the film 100 and the lid 13 through the power supply device 14 connected to the film 100 and the lid 13 The accelerated ions into the sheath layer formed around the cover through the slot 12 in the lid 13 are supplied to the inside of the space between the lid 13 and the film 100, And the introduced ions collide with the surface of the film 100 which continuously proceeds in one direction so that the surface of the film 100 can be polished.

This will be described in more detail as follows.

First, a step of disposing a roll driving device for advancing the film in one direction in a roll-to-roll manner in an electrically insulated vacuum chamber is performed.

That is, the film is inserted into the electrically insulated vacuum chamber.

Next, a step of covering the periphery of the film with a cover electrically connected to the film side and acting as an ion extraction electrode through the slot is performed.

Here, the lid is electrically connected to the film to serve as an ion extraction electrode.

Next, a step of providing a low-temperature high-density plasma inside the vacuum chamber is performed.

At this time, it is preferable that the plasma is uniformly formed in the chamber.

Next, a negative bias is applied to the film and the cover, and the film is continuously conveyed in one direction using a roll driving device.

At this time, the film is released from the supply roll side and is transported along a predetermined locus via the idle roll, and can be wound again on the recovery roll side after the completion of the processing.

Next, ions accelerated into the sheath formed around the lid through the extraction electrode are drawn into the space between the lid and the film, and collide with the surface of the film proceeding in one direction, thereby processing the film.

At this time, two processing steps of reducing the roughness of the film surface and removing the surface layer on the film can be selectively performed.

For example, when the slot of the lid is provided at a position where the roll-side contact portion of the film is viewed from the front, the ion passing through the slot is supported on the roll side, So that polishing processing can be performed.

In addition, when the slot of the cover is provided at a position facing the film at the same height as the linear path progression of the film, ions passing through the slot precisely cut the thickness of the film to a required thickness The film thickness cutting processing can be performed.

Here, since the ions are collided toward the film thickness side in the direction in which the film advances, that is, the film processing force is collided with the ion accelerating force while being in conflict with each other, so that the film thickness cutting processing can be performed more efficiently .

As described above, in the present invention, by implementing an apparatus and method for processing the surface of various kinds of films in a roll-to-roll process with low-temperature plasma infiltration ions using accelerated ions, the film is processed immediately after the roll- Therefore, it is not only advantageous in mass production but also applicable to various fields such as functional or display field film.

10: Vacuum chamber 11: Roll driving device
12: Slot 13: Cover
14: Power supply 15: Feed roll
16: Recovery roll 17: Idle roll
100: film

Claims (7)

A vacuum chamber 10 electrically insulated and filled with plasma;
A roll driving device 11 installed inside the vacuum chamber 10 to advance the film in one direction in a roll-to-roll manner;
A cover (13) provided with a slot (12) arranged to face the film surface on at least one side and surrounding the film with conductivity and separating the film from the plasma and electrically connected to the film side;
A power supply device 14 for supplying power to the lid 13 and the film side;
Wherein the film and the lid are provided with a bias having a negative value relative to the plasma potential, the lid serves as an extraction electrode having a slot, and the sheath internal Accelerated ions are attracted to the gap between the lid and the film and collide with the surface of the film which proceeds in one direction, so that the surface of the film is polished,
The slot 12 of the lid 13 is provided at a position facing the thickness of the film at the same height as the linear path progression of the film so that the ions passing through the slot can cut the thickness of the film to a required thickness And the film is polished.
The method according to claim 1,
The roll driving device 11 for conveying the film is constituted by a structure in which the roll driving device 11 is composed of a supply roll 15 and a recovery roll 16 and one or two idle rolls 17 and arranged in a triangular or rectangular shape Characterized in that the film polishing apparatus uses plasma.
The method according to claim 1 or 2,
The slot 12 of the cover 13 is provided at a position facing the roll side contact portion of the film in a front view so that the ions passing through the slot can collide against the surface of the film while being supported on the roll side Characterized in that the film polishing apparatus uses plasma.
delete Disposing a roll driving device for advancing the film in one direction in a roll-to-roll manner inside an electrically insulated vacuum chamber;
Covering the film periphery with a cover electrically connected to the film side and serving as an ion extraction electrode through the slot;
Providing a low temperature, high density plasma within the vacuum chamber;
Adding a negative bias to the film and the cover and advancing the film in one direction using a roll driving device;
Processing the film by accelerating ions accelerated into the sheath formed around the lid through the extraction electrode to collide with the surface of the film proceeding in one direction while being drawn into the gap between the lid and the film;
/ RTI >
In the step of processing the film, ions passing through a slot provided at a position facing the thickness of the film at the same height as the straight line traveling line of the film can cut the thickness of the film by a required thickness Wherein the film is polished using a plasma.
The method of claim 5,
In the step of processing the film, ions passing through a slot provided at a position facing the roll-side contact portion of the film are supported on the roll side while being collided with the surface of the film being processed, Wherein the polishing is performed by using a plasma.
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