KR101528200B1 - An apparatus for three dimensional thermal image measurement and a method thereof - Google Patents

An apparatus for three dimensional thermal image measurement and a method thereof Download PDF

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KR101528200B1
KR101528200B1 KR1020140192856A KR20140192856A KR101528200B1 KR 101528200 B1 KR101528200 B1 KR 101528200B1 KR 1020140192856 A KR1020140192856 A KR 1020140192856A KR 20140192856 A KR20140192856 A KR 20140192856A KR 101528200 B1 KR101528200 B1 KR 101528200B1
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Prior art keywords
thermal
imaging camera
depth
signal
measured
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KR1020140192856A
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Korean (ko)
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김기석
이계승
허환
김건희
남기환
성하영
김선진
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한국기초과학지원연구원
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/48—Thermography; Techniques using wholly visual means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Abstract

The present invention relates to a three-dimensional thermal image measuring apparatus and method, and more particularly, to a three-dimensional thermal image measuring apparatus and method for measuring a three-dimensional thermal image, Dimensional thermal image measuring apparatus and method.

Description

[0001] The present invention relates to a three-dimensional thermal image measurement apparatus and method,

The present invention relates to a three-dimensional thermal image filming apparatus and method for calculating a thermal shape of an object to be measured by using a thermal signal radiated from a sample such as a wafer used for a semiconductor and a semiconductor, .

2. Description of the Related Art [0002] Recently, due to the high integration and miniaturization of semiconductor devices and the complexity of the manufacturing process, various quantities have been generated that cause problems in device operation.

The occurrence of such defects is a cause of deterioration of the performance and yield of the semiconductor device, and the semiconductor device manufacturing companies are carrying out many efforts to solve the problem.

In general, known causes of defects include microwave misalignment, impurity concentration, nonuniformity of the wafer interior such as thin film thickness, micro-defects in the wafer, and the like. Examples of the defective types include metal wiring short circuit, local resistance increase, contact resistance abnormality, Leakage, oxide breakdown, and device latch-up.

Therefore, in recent years, due to the fine patterning and high integration of semiconductor devices, a large yield reduction is caused by internal defects, process defects, and pattern defects having a size of about 1 탆 or less. In order to increase the yield and reduce the production cost, The importance of analysis is emerging.

Also, various types of defects that occur for the above reasons cause local hot spots. Therefore, a technique of inspecting a infrared heat radiation due to a local heat generated from a semiconductor defect by using an infrared wavelength measuring instrument is used in a semiconductor manufacturing process.

FIG. 1 shows a device for measuring the heat distribution, which measures the local heat as described above.

1, the heating distribution measuring apparatus includes a sample mounting part including an infrared sensor and including a vacuum chamber having a transparent window from visible light to infrared wavelength band on the upper part thereof, a light source for irradiating visible light to the infrared sensor, A power supply for generating a driving signal for periodically generating heat from the infrared sensor, a detecting unit for detecting light reflected from the surface of the infrared sensor, and a signal generator for synchronizing a driving signal to the detecting unit and the power supply unit .

 In the above conventional heat distribution measuring apparatus, the change of the reflectance of light due to the temperature change occurring at the defective point of the sample is measured by the heat reflection method and converted into thermal distribution to identify the defective point of the sample. It can not be obtained only in a plane, so that it is not possible to accurately grasp the position where the defective point occurs.

Therefore, only the defectiveness of the sample can be grasped, and the process in which the sample is defective can not be grasped and the yield of the semiconductor production process can not be increased.

Korean Patent Publication No. 2014-0025980

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to clearly observe a defect point generated in a sample by measuring a thermal image of a target object to be measured in three dimensions.

It is another object of the present invention to provide a three-dimensional thermal image measuring apparatus capable of measuring a depth value of a defect point generated in a sample to find a process in which a problem occurs, thereby improving a problematic process.

In order to achieve the above object, a three-dimensional thermal image measuring apparatus according to the present invention includes an external modulation applying apparatus (100) for applying a periodic abnormality signal to a target object (1) ); A thermal imaging camera (200) for measuring a thermal signal radiated from the object (1); A display unit 300 for outputting a thermal signal measured by the thermal imaging camera 200; , And the position and depth of the defect (2) on the plane of the object (1) are measured.

The display unit 300 displays the data value of the periodic error signal applied to the object 1 from the external modulation permitting apparatus 100 and the data value of the thermal signal measured by the thermal imaging camera 200 (310) for calculating a depth (z) of a defect (2) measured in the object (1) by substituting the function for outputting a three-dimensional image.

The arithmetic operation unit 310 inputs the data value of the thermal signal radiated from the object 1 into the following equation to calculate the thermal diffusion depth of the defect 2 generated in the object 1

Figure 112014127554542-pat00001
) Is measured.

Figure 112014127554542-pat00002

(

Figure 112014127554542-pat00003
: The depth at which heat is conducted due to the nature of the object,
Figure 112014127554542-pat00004
: Specific heat of the object,
Figure 112014127554542-pat00005
: Density of the object,
Figure 112014127554542-pat00006
: Thermal signal frequency generated by the object)

Further, the computing device 310 may calculate the thermal diffusion depth (?

Figure 112014127554542-pat00007
And the phase of the thermal signal measured by the thermal imaging camera 200
Figure 112014127554542-pat00008
) Is substituted into the following equation to determine the depth (z) of the defect (2).

Figure 112014127554542-pat00009

(

Figure 112014127554542-pat00010
: Thermal diffusing depth of defects generated in the object, z: depth of defects,
Figure 112014127554542-pat00011
: Phase of thermal signal measured in thermal imaging camera)

The thermal imaging camera 200 is further provided with a displacement sensor LVDT for adjusting the distance to the object 1 and the displacement sensor LVDT is used to measure the height of the object 1 And a thermal image is measured to calculate a three-dimensional thermal image.

In order to accomplish the above object, a three-dimensional thermal image measuring method according to the present invention includes a step S10 of applying a periodic abnormality signal to a target object 1 to cause the target object 1 to emit a thermal signal, ; A thermal image measuring step (S30) of measuring a thermal signal emitted from the object (1) using the thermal imaging camera (200); An image forming step (S40) of implementing a three-dimensional thermal image of the object (1) using the thermal signal measured by the thermal imaging camera (200); A defect searching step (S50) of finding the depth of the defect (2) formed on the object (1) using the thermal signal measured by the thermal imaging camera (200); An error searching step (S60) of finding a production process of the object (1) in which a defect occurs by grasping the position and the depth of the defect (2) on the plane measured in the defect searching step (S50); And a control unit.

The thermal image measuring step S30 measures the thermal image for each depth of the object 1 by adjusting the distance L between the thermal imaging camera 200 and the object 1, In the defect searching step S40, the thermal image of the object 1 is imaged in 3D using the thermal image according to the position measured in the thermal image measuring step S20.

The apparatus and method for measuring a three-dimensional thermal image according to the present invention as described above provide a method of three-dimensionally measuring a thermal image of a target object, thereby measuring the depth of a defect occurring in a target object which can not be measured by a conventional measurement method It has the advantage of being able to do.

Further, by measuring the depth of defects occurring in the object, it is possible to grasp the process in which a problem occurs in a plurality of processes for producing the object, thereby improving the production yield.

In addition, by providing a method of clearly positioning the focus height of the thermal imaging camera measuring the thermal signal on the surface of the object 1, it is possible to minimize the error caused by the failure of focus control of the thermal imaging camera .

1 is a conceptual diagram showing a conventional heat distribution measurement device.
2 is a conceptual view showing a three-dimensional thermal image measuring apparatus.
3 is a flowchart showing a method of measuring a three-dimensional thermal image.
4 is a conceptual view illustrating a focus control method of a thermal imaging camera and a method of measuring a three-dimensional thermal image.
5 is a conceptual view illustrating a method of implementing a thermal image of a thermal imaging camera;
6 is a conceptual diagram showing a three-dimensional thermal image measuring apparatus (at the time of calculating the depth of defect)

Hereinafter, an apparatus and a method for measuring a three-dimensional thermal image according to the present invention will be described in detail with reference to the drawings.

2, the three-dimensional thermal image measuring apparatus of the present invention includes an external modulation applying apparatus 100 for applying a periodic abnormality signal to a target object 1 to cause the target object 1 to emit a thermal signal, A thermal imaging camera 200 for measuring a thermal signal radiated from the object 1 and a display unit 300 for outputting thermal signals measured by the thermal imaging camera 200.

The three-dimensional thermal image measuring apparatus of the present invention uses a phase lock thermal imaging technique to measure a thermal image of a target object 1 using a thermal signal emitted from the object 1.

In detail, the phase lock thermal imaging technique uses a periodic error signal of the external modulation-applying apparatus as a harmonic function to be incident on the object 1, processes the response signal of the object 1 at this time, A method of detecting a result of a defect by detecting a change in a heat source by obtaining a response signal of a target by synchronizing an infrared ray detecting element with a heat source incident as a harmonic function.

Hereinafter, a method for measuring the thermal shape of the object 1 will be described in detail with reference to FIGS. 2 to 6, which is a three-dimensional thermal image measuring apparatus according to the present invention.

Referring to FIG. 3, the 3D thermal image measurement method starts with a signal application step (S10) in which a periodic abnormality signal is applied to the object 1 to cause the object 1 to emit a thermal signal .

Referring to FIG. 2, in order for the object 1 to emit a thermal signal having a periodic pattern, a periodic stimulus must be applied to the object 1. Therefore, in order to apply a periodic stimulus to the object 1, the external modulation applying apparatus 100 may apply the external modulation applying apparatus 100 to the external modulation applying apparatus 100 such that the external modulation applying apparatus 100 generates an energy producing an external energy source such as light, current, And a function of an external energy source applied to the object (1) by inputting functions such as a sinusoidal wave, a triangular wave, a square wave, and a square wave, which are harmonic functions continuously and repeated with periodicity in the external energy source, And a function generating device for generating the function generating device.

That is, a command is given to the energy production apparatus using the function generation apparatus, thereby applying periodic stimulation to the object 1 according to a command from the function generation apparatus in the energy production apparatus.

Thereafter, in order to measure a thermal signal emitted from the object 1 using the thermal imaging camera 200, a focus control step S20 (S20) is performed to focus the thermal imaging camera 200 on the surface of the object 1 ).

At this time, various methods can be used to adjust the focus of the thermal imaging camera 200 to the surface of the object 1. However, in order to adjust the focus accurately, the surface 3 of the lower structure supporting the object 1, It is recommended to raise the thermal imaging camera 200 by the thickness h of the object 1. [

4, the focus control step S20 includes a focus setting step of fixing the focus of the thermal imaging camera 200 to the surface 3 of the lower structure supporting the object 1 And a focusing step S22 of raising the focus of the thermal imaging camera 200 by the thickness h of the object 1 on the surface 3 of the lower structure.

At this time, the height of the thermal imaging camera 200 can be adjusted in various ways, but a displacement sensor (LVDT) is further provided in the thermal imaging camera 200 to control the height of the thermal imaging camera 200, It is recommended that the error value generated when moving the thermal imaging camera 200 is minimized.

Thereafter, a thermal image measurement step S30 is performed to measure a thermal signal emitted from the object 1 by using the thermal imaging camera 200. FIG.

Referring to FIG. 5, the object 1 emits a thermal signal having a periodic pattern to the outside by periodic stimulation applied by the external modulation-applying apparatus 100.

At this time, the thermal imaging camera 200 photographs a thermal pattern emitted from the object 1 with a predetermined time pattern, reproduces the thermal signal of the photographed object 1 by pixels, To recover the pattern of the thermal signal emitted by the sensor.

At this time, the thermal imaging camera 200 selects only the signals corresponding to the periodic changes generated in the function generator in conjunction with the function generator included in the external modulation-applying apparatus 100, It is desirable to minimize the noise value generated in the process of restoring the pattern of the thermal signal emitted by the object 1 by restoring the pattern of the signal.

Thereafter, an image implementation step S40 is performed to implement a thermal image of the object 1 using the thermal signal measured by the thermal imaging camera 200. [

At this time, the thermal signal measured by the thermal imaging camera 200 is implemented in the display unit 300 using the following equation (1).

Figure 112014127554542-pat00012

(S: phase signal, n: number of measurements per cycle, N: number of cycles,

Figure 112014127554542-pat00013
: correlation function,
Figure 112014127554542-pat00014
: Measured thermal radiation signal per pixel)

That is, the phase signal S for arranging the thermal signals for each pixel measured in the thermal imaging camera 200 is obtained by multiplying the number n of measurements per one cycle of the thermal imaging camera 200, And a correlation function N corresponding to an abnormal signal applied to the object 1 by the external modulation permitting apparatus 100

Figure 112014127554542-pat00015
) And the pixel-name thermal radiation signal measured by the thermal imaging camera 200
Figure 112014127554542-pat00016
). ≪ / RTI >

Referring to FIG. 6, a depth searching step S50 for finding a depth z of a defect 2 formed on the object 1 using the thermal signal measured by the thermal imaging camera 200 .

2, the display unit 300 displays the data value of the periodic error signal applied to the object 1 from the external modulation permitting apparatus 100 and the thermal value measured by the thermal imaging camera 200, (Z) of the defect (2) measured in the object (1) using the data value of the signal.

That is, the computing device 310 obtains the depth z of the defect (2) by using the following equations (2) and (3).

Figure 112014127554542-pat00017
(Equation 2)

(

Figure 112014127554542-pat00018
: The depth at which heat is conducted due to the nature of the object,
Figure 112014127554542-pat00019
: Specific heat of the object,
Figure 112014127554542-pat00020
: Density of the object,
Figure 112014127554542-pat00021
: Thermal signal frequency generated by the object)

Figure 112014127554542-pat00022
(Equation 3)

(

Figure 112014127554542-pat00023
: Thermal diffusing depth of defects generated in the object, z: depth of defects,
Figure 112014127554542-pat00024
: Phase of thermal signal measured in thermal imaging camera)

Thereafter, an error search step (S60) is performed in which the position and depth of the defect (2) measured in the depth searching step (S50) are detected and a production process of the object (1) in which a defect occurs is searched.

In detail, a product produced by a plurality of apparatuses is processed through a process of modifying the constituent elements of the product, a process of combining or separating the respective constituent elements, and the like. At this time, since a standard shape is determined for each process, if a position where a defect occurs is found, it is possible to search for a process in which a defect occurs, thereby resolving a process error.

Referring to FIG. 4, the displacement sensor (LVDT) included in the 3D thermal imaging apparatus of the present invention can be used in the thermal image measurement step S30 in addition to the focus control step S20.

In detail, the apparatus for measuring a three-dimensional thermal image according to the present invention is a device for measuring a thermal signal generated at the focal point of the thermal imaging camera 200.

Accordingly, when the thermal imaging camera 200 is moved up and down using the above-described divergence sensor LVDT, the focal height of the thermal imaging camera 200 is adjusted so that the thermal signal for each thickness h of the object 1 .

That is, a thermal signal for each thickness z of the object 1 is measured, and a three-dimensional thermal image of the object 1 is implemented using the thermal signal measured at each position.

The technical idea should not be interpreted as being limited to the above-described embodiment of the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, such modifications and changes are within the scope of protection of the present invention as long as it is obvious to those skilled in the art.

1: Target object
2: Defect
3: Surface of the structure
100: External modulation device
200: Thermal imaging camera
300:
310:

Claims (8)

An energy production device for applying a periodic abnormality signal to the object 1 to cause the object 1 to emit a thermal signal and a function generator for inputting a harmonic function continuously and repeatedly with a periodicity in the energy production device (100);
A thermal signal radiated from the object 1 is measured and only a thermal signal corresponding to a periodic change of a function generated by the function generator is selected to restore a pattern of a thermal signal emitted by the object 1 A thermal imaging camera 200 moving up and down;
A display unit 300 for outputting a thermal signal measured by the thermal imaging camera 200; And
A displacement sensor (LVDT) measuring a displacement occurring when the thermal imaging camera (200) is moved up and down to reduce an error value generated when the thermal imaging camera (200) moves; / RTI >
And measures the position and the depth on the plane of the defect (2) generated on the object (1).
The display device according to claim 1, wherein the display unit (300)
A data value of a periodic abnormality signal applied to the object 1 by the external modulation application apparatus 100 and a data value of a thermal signal measured by the thermal imaging camera 200 are substituted into the function, And a computing device (310) for obtaining a depth (z) of the defect (2) measured in the three-dimensional thermal image measuring device.
The apparatus according to claim 2, wherein the computing device (310)
The data value of the thermal signal radiated from the object 1 is input to the following equation to calculate the thermal diffusion depth of the defect 2 generated in the object 1
Figure 112014127554542-pat00025
) Of the three-dimensional thermal imager.
Figure 112014127554542-pat00026

(
Figure 112014127554542-pat00027
: The depth at which heat is conducted due to the nature of the object,
Figure 112014127554542-pat00028
: Specific heat of the object,
Figure 112014127554542-pat00029
: Density of the object,
Figure 112014127554542-pat00030
: Thermal signal frequency generated by the object)
The apparatus according to claim 3, wherein the computing device (310)
The thermal diffusion depth (?) Detected in the equation (1)
Figure 112014127554542-pat00031
And the phase of the thermal signal measured by the thermal imaging camera 200
Figure 112014127554542-pat00032
) Is substituted into the following equation to determine the depth (z) of the defect (2).
Figure 112014127554542-pat00033

(
Figure 112014127554542-pat00034
: Thermal diffusing depth of defects generated in the object, z: depth of defects,
Figure 112014127554542-pat00035
: Phase of thermal signal measured in thermal imaging camera)
delete (S10) receiving a harmonic function successively repeated with a periodicity in a function generator and applying a periodic abnormality signal to the object 1 to cause the object 1 to emit a thermal signal;
A focus control step (S20) of focusing the focus of the thermal imaging camera (200) on the surface of the object (1);
A thermal image measuring step (S30) of measuring a thermal signal emitted from the object (1) using the thermal imaging camera (200);
An image forming step (S40) of implementing a thermal image of the object (1) using the thermal signal measured by the thermal imaging camera (200);
A depth searching step (S50) of finding a depth of a defect (2) formed on the object (1) using a thermal signal measured by the thermal imaging camera (200);
An error searching step (S60) of finding a production process of the object (1) in which a defect occurs by grasping the position and the depth of the defect (2) on the plane measured in the defect searching step (S50); / RTI >
The focus control step S20 includes a focus setting step S21 for fixing the focus of the thermal imaging camera 200 to the surface 3 of the lower structure supporting the object 1, (S22) of raising the focus of the object (200) by the thickness of the object (1) on the surface (3) of the lower structure,
The thermal image measuring step S30 may include selecting a thermal signal corresponding to a periodic change of the function generated by the function generator and restoring the pattern of the thermal signal emitted by the object 1. [ Dimensional thermal image measurement method.
delete The method according to claim 6,
The thermal image measuring step S30 measures the thermal image for each depth z of the object 1 by adjusting the distance L between the thermal imaging camera 200 and the object 1 ,
The method of claim 1, wherein the step of constructing the image (S40) comprises three-dimensionally embedding the thermal image of the object (1) using the thermal image of each position measured in the thermal image measuring step (S30) Dimensional thermal image measurement method.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101759862B1 (en) 2016-06-21 2017-07-31 한국기초과학지원연구원 The measurement method of thermal property using Lock-in thermography
KR101833445B1 (en) 2017-06-27 2018-02-28 한국기초과학지원연구원 Detection device of thermal diffusion use laser lock-in thermography
KR20190063671A (en) 2017-11-30 2019-06-10 (주)코어센스 3d thermal distribution display device using stereo camera and thermal camera
US11474149B2 (en) 2019-11-07 2022-10-18 Samsung Electronics Co., Ltd. Test apparatuses for testing semiconductor packages and manufacturing systems for manufacturing semiconductor packages having the same and methods of manufacturing the semiconductor packages using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690016B1 (en) * 1998-02-10 2004-02-10 Philip Morris Incorporated Process control by transient thermography
JP2013101005A (en) * 2011-11-07 2013-05-23 Hamamatsu Photonics Kk Heat generation point detection method and heat generation point detection device
KR20130087487A (en) * 2010-06-08 2013-08-06 디씨지 시스템스 인코포레이티드 Three-dimensional hot spot localization
KR101336946B1 (en) * 2012-11-27 2013-12-04 한국기초과학지원연구원 Failure analysis appratus and method using measurement of heat generation distribution

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690016B1 (en) * 1998-02-10 2004-02-10 Philip Morris Incorporated Process control by transient thermography
KR20130087487A (en) * 2010-06-08 2013-08-06 디씨지 시스템스 인코포레이티드 Three-dimensional hot spot localization
JP2013101005A (en) * 2011-11-07 2013-05-23 Hamamatsu Photonics Kk Heat generation point detection method and heat generation point detection device
KR101336946B1 (en) * 2012-11-27 2013-12-04 한국기초과학지원연구원 Failure analysis appratus and method using measurement of heat generation distribution

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101759862B1 (en) 2016-06-21 2017-07-31 한국기초과학지원연구원 The measurement method of thermal property using Lock-in thermography
WO2017222115A1 (en) * 2016-06-21 2017-12-28 한국기초과학지원연구원 Method for measuring thermal property by using lock-in thermography
KR101833445B1 (en) 2017-06-27 2018-02-28 한국기초과학지원연구원 Detection device of thermal diffusion use laser lock-in thermography
KR20190063671A (en) 2017-11-30 2019-06-10 (주)코어센스 3d thermal distribution display device using stereo camera and thermal camera
US11474149B2 (en) 2019-11-07 2022-10-18 Samsung Electronics Co., Ltd. Test apparatuses for testing semiconductor packages and manufacturing systems for manufacturing semiconductor packages having the same and methods of manufacturing the semiconductor packages using the same

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