KR101483695B1 - Apparatus for Refining Silicon - Google Patents

Abstract

A silicon refining apparatus is disclosed.
A silicon refining apparatus according to an embodiment of the present invention includes a silicon melt portion having an open upper portion and at least one partition wall extending from the inside of the silicon melt portion to form a flow path therein.

Description

[0001] Apparatus for Refining Silicon [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon scouring apparatus, and more particularly, to a silicon scouring apparatus capable of improving the refining effect by using a vacuum volatilizing scouring technique in performing silicon casting based on an electron- .

Recently, according to the international trend, solar power generation is widely used as an environmentally friendly development method in the world. Such solar power generation is accomplished through solar cells that convert light energy into electrical energy. These solar cells are made up of small silicon crystals.

The purity of the silicon constituting the solar cell is usually expressed as 5N, 6N, and 9N. Here, N means the number of 9 in terms of weight%, and 5 N means 99.999% purity.

For silicon producing semiconductors requiring ultra-high purity, the purity reaches 11N. However, even if the purity of silicon constituting the solar cell is 5 to 7N, it is known that the addition of a simple gettering process can obtain a photoconversion efficiency similar to the case of having a purity of 11N, so that ultra-high purity is not required.

In addition, silicon that produces semiconductors is manufactured through chemical vapor deposition (CVD). However, such a silicon manufacturing process is known to generate a large amount of pollutants, reduce production efficiency, and increase the production cost.

Accordingly, a metallurgical refining process capable of mass-producing high-purity silicon constituting a solar cell at a low manufacturing cost has been actively developed.

In this metallurgical refining process, high-purity polysilicon is produced not only from low-price / low-grade rapid-grade silicon powder, but also recently from waste / bad solar cell and process scrap.

The production of polycrystalline silicon ingots for solar cells is basically characterized by directional solidification.

The directional solidification process refers to a process in which silicon particles are filled in a crucible and melted at a temperature of 1420 ° C. or higher and the solidification heat of the silicon is removed in a certain direction under the crucible to cause the solidification to spread from the bottom of the crucible to the upper side.

Such a directional solidification step can form a layer separation of the solid-liquid interface and guide the impurities toward the liquid phase, thereby collecting the impurities toward the upper side of the ingot.

Representative processes such as vacuum refining, oxidation treatment, and unidirectional solidification refining have been developed for metallurgical refining of high purity silicon for solar power generation.

Of these metallurgical refining methods, silicon manufacturing technology by a metal melting method such as unidirectional solidifying refining method and vacuum refining method has been actively studied because of easy characteristic control and contamination by impurities during operation.

Here, unidirectional solidification refining is a refining process in which silicon segregates impurities to liquid along a solid-liquid interface during phase transition from liquid to solid, and is a typical metal impurity such as Fe, Ti, Cr, Cu, Ni, and the like can be removed.

Vacuum refining is a refining process in which impurities having a higher vapor pressure than silicon are removed from a molten metal after melting a metal raw material, and representative nonmetal impurities such as Al, Ca, Mn, and P can be removed .

However, in the case of such a vacuum refining method, there is a problem that the movement route of the silicon melt is not long, and the reaction area in which the non-metallic impurities can be sufficiently removed is insufficient.

Korean Patent No. 10-2011-0050371 Korean Patent Publication No. 10-2011-0120617

SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above problems of the prior art, and it is an object of the present invention to provide a method and system for efficiently producing a polysilicon ingot for a solar cell, And to provide a silicon refining apparatus which secures time and space to enhance the silicon refining efficiency.

According to an aspect of the present invention, there is provided a refining apparatus for silicon including a silicon melt and an upper open silicon melt and at least one partition wall extending from the inside of the silicon melt to form a flow path therein have.

The plurality of barrier ribs may be oriented parallel to each other.

According to another aspect of the present invention, there is provided a vacuum chamber comprising: a vacuum chamber for maintaining a vacuum atmosphere; at least one electron gun provided in the vacuum chamber for irradiating an electron beam; A silicon melt portion in which the silicon raw material is melted by the electron beam to form a silicon melt, a unidirectional solidifying portion for solidifying the silicon melt supplied from the silicon melting portion, a first channel portion of the silicon melt portion, And a second channel portion of the solidification portion being in contact with each other, and at least one partition wall for changing the movement path of the silicon melt in the silicon melt portion.

In addition, the connecting pipe includes a lower face portion and a pair of side face portions extending substantially vertically at both ends of the lower face portion, and the cross-sectional area of the lower face portion may be reduced according to a direction in which the silicon melt is fed.

The bottom portion of the connecting bath can be covered with the silicon melt while the silicon melt is supplied to the unidirectional solidification portion.

The silicon melting portion, the unidirectional solidification portion, or the partition wall portion may have a copper material.

Further, the partition wall portion may have a material different from that of the silicon melt portion or the unidirectional solidification portion.

The flow path portion includes a first flow path portion including a plurality of flow paths formed by a plurality of slits, and a second flow path portion extending from the first flow path portion, May be connected to each other to form one flow path.

The silicon fused portion may include respective flow path portions disposed on the outer side, and the flow path portions disposed on the adjacent outer side may be spatially connected to each other through the inside of the silicon fused portion.

The silicon melt portion may have a plurality of flow path portions disposed on the outer side, and a flow path width of at least one of the plurality of flow path portions may be larger than a flow path width of the remaining flow path portions.

In addition, the flow path portion may be spatially connected to the inside of the partition wall.

In order to solve the above problems, the present invention has the following effects.

First, volatile impurities can be removed from the silicon melt by supplying the silicon raw material to the silicon melting section and irradiating the electron beam to melt the silicon first, then lengthening the movement path of the silicon melt before the silicon melt is supplied to the one- The reaction time and space can be increased to improve the vacuum refining effect.

Secondly, since the refined effect of the molten silicon in the silicon melting portion is improved, it is not necessary to remove the volatile impurities in the silicon through a separate device or a chemical method, so that the polysilicon ingot can be continuously mass- Cost can be reduced.

1 is a schematic view of a silicon refining apparatus according to an embodiment of the present invention.
Fig. 2 is a view showing a movement path of the silicon melt in Fig. 1. Fig.
Fig. 3 is a perspective view schematically showing the silicon melting portion of Fig. 1;
Fig. 4 is a view showing the outside of Fig. 3. Fig.
5 is a sectional view taken along line AA in Fig.
6 is a sectional view showing the inside of the partition wall of Fig.
7 is a perspective view showing a state in which a fluid supply portion is disposed in a silicon melting portion according to an embodiment of the present invention.
FIG. 8 is a view showing the state of FIG. 7 as seen from above and the state as seen from the outside.
Fig. 9 is a view showing two kinds of connecting trough parts having different shapes.
Fig. 10 is a sectional view showing the thickness of the silicon melt held in the two kinds of connecting bath portions shown in Fig. 9 from the side view. Fig.
11 is an experimental result table qualitatively showing the thickness of the silicon melt held in the two kinds of connecting baths shown in FIG.
FIG. 12 is a view showing a connecting bath part according to another embodiment of the present invention. FIG.
FIG. 13 is a view showing a connecting bath part according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It is to be understood, however, that the appended drawings illustrate the present invention in order to more easily explain the present invention, and the scope of the present invention is not limited thereto. You will know.

In describing the embodiments of the present invention, it is to be noted that components having the same function are denoted by the same names and numerals, but are substantially not identical to those of the conventional polysilicon manufacturing apparatus.

Also, the terms used in the present application are used only to describe certain embodiments and are not intended to limit the present invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

1 is a schematic view of a silicon refining apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a silicon refining apparatus includes a vacuum chamber 100, an electron gun 200, a silicon melting portion 390, and a unidirectional solidification portion 400.

The vacuum chamber 100 maintains a vacuum atmosphere therein so that impurities can be evaporated in the silicon melt, which will be described later. The pressure inside the vacuum chamber 100 may be about 10-5 torr.

At the upper end of the vacuum chamber 100, there is provided a raw material input part 120 through which a silicon raw material in the form of particles can be supplied.

A cooling water path may be provided in the raw material input portion 120 to prevent the raw material input portion 120 from being damaged by heat of an electron beam to be described later.

The raw material input portion 120 may include a raw material supply line 122 and an input port 124 of the raw material supply portion and the input port 124 of the raw material supply portion may be connected to the silicon melt portion 390, The position and angle at which the material is supplied can be adjusted.

The electron gun 200 is installed in the vacuum chamber 100, and may be a plurality of electron guns.

The electron gun 200 according to the present embodiment includes a first electron gun 210 and a second electron gun 220.

The first electron gun 210 is installed at the upper end of the vacuum chamber 100 so that an electron beam is irradiated into the vacuum chamber 100.

The silicon melting portion 390 is disposed in a region irradiated with the electron beam by the first electron gun 210.

The silicon melt portion 390 may be charged with a silicon raw material in the form of particles from the raw material input portion 120.

The raw material input part 120 may adjust the supply amount of the silicon raw material by adjusting the inclination between the silicon melting part 390 and the upper end of the main chamber 100.

In addition, the silicon melting portion 390 is formed in an open top so that the electron beam can be irradiated.

Accordingly, the silicon raw material loaded in the silicon melting portion 390 is melted by the electron beam accelerated and accumulated in the first electron gun 210, and is formed into the silicon melt M.

Meanwhile, the first electron gun 210 may accelerate and accumulate the first electron beam to have an output energy of 30 to 35 kWh / cm 2.

However, the present invention is not limited to this, and the first electron gun 210 may have an output energy for preventing the behavior of the silicon melt to become unstable, such as the silicon melt M leaking out by an electron beam.

It is preferable that the silicon melting portion 390 has a copper material in order to prevent impurities, which may be generated by its own material, from flowing into the silicon melt.

In addition, the silicon melting portion 390 having a copper material may include a flow path portion that can easily control the cooling efficiency in order to prevent the silicon melting portion 390 from being damaged by the electron beam. A detailed description of the silicon melting portion including the flow path portion will be described later.

The unidirectional solidifying portion 400 is disposed in a region irradiated with the second electron beam by the second electron gun 220 and is adjacent to the silicon melting portion 390.

In addition, the unidirectional solidification part 400 may have a copper material similar to the silicon melting part 390.

The unidirectional solidification unit 400 can continuously cast an ingot using the silicon melt (M) and induce segregation of metal impurities, thereby improving silicon refining and high-purity polysilicon production efficiency.

Meanwhile, the second electron gun 220 may accelerate and accumulate the second electron beam to have an output energy of 8 to 14 kWh / cm 2.

Like the first electron gun 210, the second electron gun 220 also has an output energy for preventing the behavior of the silicon melt from becoming unstable, such as the silicon melt (M) Lt; / RTI >

The first channel portion 391 of the silicon melt portion 390 and the second channel portion 401 of the unidirectional solidification portion 400 may be in contact with each other, The portion 500 provides a channel through which the silicon melt M can be supplied from the silicon melting portion 390 to the unidirectional solidification portion 400.

The connecting pipe passage portion 500 includes a bottom portion 501 and a pair of side portions 502 extending substantially vertically at both ends of the bottom portion 501.

Silicon raw material is supplied through the raw material supply part 122 and the silicon melt M stored in the silicon melting part 390 is supplied to the connection part 500 through the connection part 500 by the amount of the molten silicon melt, Can be supplied to the one-direction solidification unit 400.

In addition, the distance of the side portions 502 facing each other in the upward direction from the bottom portion 501 can be increased. Accordingly, the electron beam can be irradiated to the silicon melt flowing along the connecting pipe 500, thereby improving the silicon refining effect.

Also, since the area irradiated with the electron beam is reduced in the peripheral portion of the connection pipe 500, the durability of the connection pipe 500 can be improved.

A detailed description of the connecting bath part 500 will be described later with reference to the drawings.

The partition wall 395 may extend inside the silicon melting portion 390 to form a flow path therein.

The partition wall 395 extends in a direction parallel to the inner side surface of the silicon melt portion 390 and a flow path is formed between the partition wall 395 and a surface facing the extended surface of the silicon melt portion 390 .

A flow path is formed between one end of the partition wall 395 and the silicon melt 390 to change the moving direction of the silicon melt M moving along the longitudinal direction of the partition wall 395 .

The plurality of barrier ribs 395 may be parallel to each other.

Accordingly, the plurality of partitions 395 in the silicon melt part 390 are oriented parallel to each other, so that the partitions 395 can be easily installed in the silicon melt part 390.

The direction in which one end of the partition wall 395 faces may be opposite to the one end of the adjacent partition wall 395. As a result, the direction in which the fluid moves in the silicon melting portion 390 can be continuously changed.

That is, the plurality of barrier ribs 395 may form a zigzag flow path in the silicon melting portion 390.

The partition wall 395 may be made of the same or similar material as the silicon melting portion 390 and may be manufactured integrally with the silicon melting portion 390 and may be manufactured separately and welded to the silicon melting portion 390 Can be combined.

The material of the partition wall 395 is not limited to the material of the partition wall 395. The material of the partition wall 395 may be a high melting point ceramics material different from the silicon melting portion 390 or the unidirectional solidification portion 400, May not be required.

Accordingly, the barrier rib 395 and the silicon melting portion 390 can be coupled in a bolt manner.

As described above, the silicon refining apparatus according to the embodiment of the present invention includes a plurality of partitions in the silicon melting unit 390 to extend the movement path of the silicon melt M, So that it is possible to secure a sufficient time to be removed.

Fig. 2 is a view showing a movement path of the silicon melt in Fig. 1. Fig.

As described above, the silicon raw material supplied through the inlet 124 of the raw material supply portion is formed of the silicon melt M by the electron beam. The silicon melt (M) moves along the longitudinal direction of the partition wall (395).

The molten silicon M is moved in the flow path between one end of the partition wall 395 and the surface of the silicon melt portion 390 facing one end of the partition wall 395.

As shown in the figure, the molten silicon M moves in a zigzag manner in the silicon melting portion 390 along the arrow direction.

As described above, the silicon scouring apparatus according to another aspect of the present invention may include at least one partition wall 395 for changing the movement path of the silicon melt M in the silicon melt portion 390.

However, the partition wall 395 is not limited to the one formed in a direction parallel to one side of the silicon melting portion 390, but may be formed in the silicon melting portion 390, Anything can be applied to a structure that can change.

Accordingly, the silicon refining apparatus according to an embodiment of the present invention can change the movement path of the silicon melt M in the silicon melt section 390, thereby changing the time for removing volatile impurities in the silicon melt M And space can be ensured.

That is, by sufficiently removing the volatile impurities, the refining effect of silicon can be improved.

In addition, since the size of the silicon melting portion does not need to be increased in order to enhance the refining effect of silicon, the manufacturing cost of the silicon refining apparatus can be reduced.

Fig. 3 is a perspective view schematically showing the silicon melting portion of Fig. 1, and Fig. 4 is a view showing the outside of Fig.

The silicon fused portion 390 is disposed outside the silicon fused portion 390 and includes a flow path portion 340 through which the fluid flows.

The flow path portion 340 includes a first flow path portion 341 and a second flow path portion 342.

The first flow path portion 341 may have a plurality of flow paths formed by a plurality of slits.

That is, the first flow path portion 341 having a plurality of slits serves to increase the surface area outside the silicon melt portion 390.

 Therefore, when the cooling fluid flows through the first flow path portion 341, the area of the cooling fluid that can be in contact with the outside of the silicon fusion portion 390 increases, thereby improving the cooling efficiency.

In addition, when the silicon melting portion 390 is exposed to the electron beam for a long time, damage due to heat can be prevented.

The second flow path portion 342 extends to the first flow path portion 341, and the plurality of flow paths are connected to each other to form one flow path.

The silicon melting portion 390 may be cut to process the first flow path portion 341 and the second flow path portion 342 on the outer side.

That is, the second flow path portion 342 is extended to the first flow path portion 341 so that the outer side of the silicon fusion portion 390 extends only by the first flow path portion 341 It is not necessary to form the slits so that the cutting process can be easily performed.

The silicon melting portion 390 has a first channel portion 391 for providing a channel through which the silicon melt can move.

The second flow path portion 342 may be disposed closer to the first channel portion 391 than the first flow path portion 341.

In addition, the second flow path portion 342 is formed to be wider by connecting the first flow path portions 341 to form one flow path.

The silicon melt according to another aspect of the present invention includes a first flow path portion 341 and a second flow path portion 342 and a flow amount flowing in the second flow path portion 342 is greater than a flow amount of the first flow path portion 341 The flow rate may be larger than the flow rate.

Accordingly, the second flow path portion 342 can speed up the cooling speed of the fluid and effectively remove the heat around the first channel portion 391.

Meanwhile, the silicon melting portion 390 applied to the silicon refining apparatus according to another aspect of the present invention may have a plurality of flow path portions 340 disposed on the outside.

The flow passage width of at least one of the plurality of flow passage portions 340 may be larger than the flow passage width of the remaining flow passage portions.

The passage having a large channel width is disposed around the first channel portion 391 of the silicon melt portion 390 to increase the cooling rate of the fluid to effectively remove the heat around the first channel portion 391 .

Also, it is possible to prevent the first channel portion 391 from being damaged due to the irradiation of the electron beam.

5 is a view showing a section taken along the line A-A in Fig.

5, the second channel portion 344, which is larger than the channel width of the first channel portion 341, may be disposed around the first channel portion 391 of the silicon melt portion 390.

Accordingly, when the cooling fluid is supplied to the second flow path portion 344, the periphery of the first channel portion 391 can be rapidly cooled.

6 is a sectional view showing the inside of the partition wall of Fig.

Referring to FIG. 6, the flow path portion 340 may be spatially connected to the inside of the partition wall 395.

The partition wall 395 may have septum channel portions 396, 397, and 349 connected to the channel portion 340.

The partition wall flow passage portion includes a first partition wall flow passage portion 396 adjacent to the upper end of the partition wall, a second partition wall flow passage portion 397 communicating with the first partition wall flow passage portion 396, And a third partition wall flow passage 349 communicated with the first partition wall.

The partition wall flow passage is not limited to the first partition wall flow passage 396, the second partition wall flow passage portion 397 and the third partition wall flow passage portion 349 but may be configured to move the fluid to the upper end portion of the partition wall 390 If the structure can be applied, it can be applied.

Accordingly, as the fluid moves through the cooling channel such as the partition wall channel portion, the upper end of the partition wall 390 can be prevented from being damaged by the electron beam.

FIG. 7 is a perspective view showing a state in which a fluid supply unit is disposed in a silicon melting unit according to an embodiment of the present invention, and FIG. 8 is a view showing a state when the fluid supply unit is viewed from above and FIG.

Referring to FIGS. 7 and 8, the fluid supply part 370 may be disposed above the corner of the silicon melt part 390.

The cooling fluid supplied to the fluid supply part 370 flows along the flow path part 340 from the outside of the silicon melting part 390 to increase the cooling efficiency for a long time.

In addition, after the cooling fluid flows all the outside of the silicon melting portion 390, the cooling fluid moves to the adjacent outside flow path portion through a region passing through the flow path portions of the corner portion of the silicon melting portion 390.

After the cooling fluid passes through the flow path portion 340 of the silicon melting portion 390, Can pass through the flow path portion provided on the lower surface of the silicon melting portion 390 and finally can be discharged to the outside through the fluid discharge portion 380. [

The connecting bath part will be described in more detail with reference to FIGS. 9 to 10. FIG.

Fig. 9 is a view showing two kinds of connecting trough parts having different shapes.

The lower surface of the connecting bath part 500a shown in FIG. 9 (a) is flat and the side parts facing each other are parallel.

That is, the cross-sectional area of the lower portion of the connection pipe 500a is constant depending on the direction in which the molten silicon M is transferred from the silicon melt portion 390 to the one-direction solidification portion 400.

The connecting tuyeres 500b according to one aspect of the present invention shown in FIG. 9 (b) are arranged such that the molten silicon M is transferred from the silicon melting portion 390 to the unidirectional solidifying portion 400 The sectional area of the lower portion is reduced.

In addition, the width of the channel of the connecting bath part 500b according to another aspect of the present invention may be narrowed according to the direction in which the silicon melt is fed.

As described above, the connecting trough part 500b according to one aspect of the present invention is not limited to the shape in which the cross-sectional area of the bottom part is small, and the width of the channel of the connecting trough part 500b is not limited to the direction So that it is possible to secure a time for the silicon melt to stay in the connecting pipe portion 500b.

In addition, the lower surface of the connecting bath part 500b is flat.

10 is a graph showing the results of experiments for comparing the thicknesses of silicon melt held in the two kinds of connection tanks shown in FIG. 9 using a silicon refining apparatus according to an aspect of the present invention.

Fig. 10 (a) is a view showing a cross section of the connecting bath part according to Fig. 9 (a). Fig. As shown in FIG. 10 (a), it can be seen that the amount of silicon melt is reduced in accordance with the direction in which the silicon melt is transported.

Fig. 10 (b) is a view showing a cross section of the connecting bath part according to Fig. 9 (b). As shown in Fig. 10 (b), it can be seen that the amount of silicon melt is relatively uniform in accordance with the direction in which the molten silicon is transported.

11 is an experimental result table quantitatively showing the thickness of the silicon melt held in the two kinds of connecting baths shown in FIG.

11, the average value of the silicon melt held in the connecting portion 500b according to one aspect of the present invention is the largest, It can be seen that the thickness of the molten silicon covering the lower surface of the connecting portion 500b along the direction from the silicon molten portion 390 to the unidirectional solidifying portion 400 is the most uniform.

9 (b) according to an aspect of the present invention allows a certain amount of silicon melt to be held on the connecting bath part 500b, The silicon melt portion and the unidirectional solidified portion can be prevented from being damaged.

That is, the structure of the connecting bath part 500b shown in FIG. 9 (b) can improve the durability of the refining device to refine silicon continuously to produce an ingot of polysilicon.

FIG. 12 is a view showing a connecting bath part according to another embodiment of the present invention. FIG.

The connecting tuyere 500c shown in FIG. 12 is formed such that the tilt of the lower surface of the lower surface of the molten silicon 390 in the horizontal direction is changed in accordance with the direction in which the molten silicon is transferred from the silicon melting portion 390 to the unidirectional solidifying portion 400 It can have an increasing shape.

Accordingly, when the molten silicon is transferred from the silicon melting unit 390 to the unidirectional solidification unit 400, the silicon melt can be held in the connection molten silicon unit 500c shown in FIG.

The connecting bath part 500c according to another embodiment of the present invention allows a certain amount of silicon melt to be held on the connecting bath part 500c so that the electron beam is directly injected into the connecting bath part 500c It is possible to prevent the upper end portions of the silicon melting portion and the unidirectional solidifying portion from being broken.

Meanwhile, according to another embodiment of the present invention, the lower surface of the lower portion of the connecting bath may have a shape in which the cross-sectional area decreases in a direction in which the silicon melt is transferred, and at the same time, the inclination of the lower surface of the lower surface increases.

Accordingly, even if the amount of the molten silicon is small, the molten silicon can be held in the connecting bath, and the additional molten glass can be prevented from being damaged by the connecting bath.

FIG. 13 is a view showing a connecting bath part according to another embodiment of the present invention.

Referring to FIG. 13, unlike the embodiment of the present invention, the lower surface of the connecting pipe 500 applied to the silicon refining apparatus may have a curved surface portion 560 having a constant curvature.

Accordingly, it is possible to prevent the silicon melt from being smoothly supplied from the silicon melting portion 390 to the unidirectional solidifying portion 400 owing to the surface tension of the silicon melt.

It will be understood by those skilled in the art that various changes and modifications may be made without departing from the scope of the present invention as defined by the appended claims, It is obvious.

100: Vacuum chamber
200: electron gun
390: silicon melt portion
395:
400; Unidirectional solidifying portion
500: Connection boiler

Claims (11)

A silicon melt portion in which a silicon melt is stored and an upper portion thereof is opened; And
A plurality of barrier ribs extending from the inside of the silicon melt portion to form a flow path therein;
/ RTI >
Wherein one of the plurality of barrier ribs extends from the inner side of the silicon melting portion adjacent to the charging port into which the raw material is charged,
Wherein one of the plurality of partition walls extends inside the silicon melting portion adjacent to the connection portion where the molten silicon is discharged. The method according to claim 1,
The plurality of partition walls are formed,
Wherein the plurality of partition walls are oriented parallel to each other. A vacuum chamber for maintaining a vacuum atmosphere;
At least one electron gun provided in the vacuum chamber and irradiating an electron beam;
A raw material supply unit provided in the vacuum chamber for supplying a silicon raw material;
A silicon melting portion in which the silicon raw material is melted by the electron beam to form silicon melt;
A unidirectional solidifying portion for solidifying the silicon melt supplied from the silicon melting portion;
A connecting bath having a first channel portion of the silicon melt portion and a second channel portion of the unidirectional solidification portion being in contact with each other; And
And at least one partition wall for changing a movement path of the silicon melt in the silicon melt portion. The method of claim 3,
And a pair of side portions extending in the vertical direction at both ends of the lower surface portion and the lower surface portion of the silicon bottom portion in the direction of conveying the silicon melt. Device. The method of claim 3,
Wherein the bottom portion of the connecting bath portion is covered and held by the silicon melt while the silicon melt is supplied to the unidirectional solidifying portion. The method of claim 3,
Wherein the silicon melt, the unidirectional solidification portion, or the partition wall portion has a copper material. The method of claim 3,
Wherein the material of the partition is ceramics. The method of claim 3,
Wherein the silicon molten portion is disposed on the outer side and includes a flow path portion through which the fluid flows,
The flow path portion includes a first flow path portion including a plurality of flow paths formed by a plurality of slits
And a second flow path portion extending to the first flow path portion and connected to each other to form one flow path. The method of claim 3,
Wherein the silicon molten portion includes respective flow paths disposed on the outer side,
And the flow path portions disposed on the adjacent outer side pass through the inside of the silicon melt portion and are spatially connected to each other. The method of claim 3,
Wherein the silicon molten portion has a plurality of flow paths disposed on the outer side,
Wherein a flow path width of at least one of the plurality of flow path portions is larger than a flow path width of the remaining flow path portions. 11. The method of claim 10,
And the flow path portion is spatially connected to the inside of the partition wall.

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