KR101474641B1 - Semiconductor module - Google Patents
Semiconductor module Download PDFInfo
- Publication number
- KR101474641B1 KR101474641B1 KR1020130056471A KR20130056471A KR101474641B1 KR 101474641 B1 KR101474641 B1 KR 101474641B1 KR 1020130056471 A KR1020130056471 A KR 1020130056471A KR 20130056471 A KR20130056471 A KR 20130056471A KR 101474641 B1 KR101474641 B1 KR 101474641B1
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- substrate
- damping
- elastic member
- damping portion
- housing
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Abstract
The present invention relates to a semiconductor module. A semiconductor module according to an embodiment of the present invention includes a substrate on which a semiconductor device is mounted, a heat radiation member formed on the other side of the substrate, and a housing formed on one side of the substrate and fastened to the substrate. An elastic member may be formed at the other end of the body, and the elastic member may include a pressing member for pressing one side of the substrate.
Description
The present invention relates to a semiconductor module.
Due to the rapid development of semiconductor technology, semiconductor devices have achieved considerable growth. In addition, semiconductor packages such as SIP (System In Package), CSP (Chip Sized Package), and FCP (Flip Chip Package) in which electronic devices such as semiconductor devices are mounted on a printed circuit board in advance are actively developed ought. Such a semiconductor package is required to have excellent ability to discharge heat generated from semiconductor devices and to insulate the high voltage. In order to solve the heat dissipation problem, various attempts have been made to fabricate various types of package substrates by using a metal material having good heat conduction characteristics. Recently, a package substrate for maximizing heat dissipation of a semiconductor device using anodic oxidation is being studied. A conventional package substrate forms an anodic oxide film on the surface of an aluminum substrate having a through-hole formed therein. At this time, an anodic oxide film is also formed on the inner wall of the through hole (US Patent No. 7947906).
When the package substrate thus formed is engaged with the housing, the substrate may be warped by a force applied to a portion to be coupled with the housing. In addition, warping may occur due to heat generated in the semiconductor device mounted on the package substrate.
According to an aspect of the present invention, there is provided a semiconductor module capable of increasing a contact area between a substrate and a heat radiation member by suppressing warping of the substrate.
According to another aspect of the present invention, there is provided a semiconductor module capable of increasing a contact area between a substrate and a heat dissipating member by applying a predetermined pressure to the substrate to improve heat dissipation performance.
According to an embodiment of the present invention, there is provided a semiconductor device comprising a substrate on which a semiconductor device is mounted, a heat dissipating member formed on the other side of the substrate, and a housing formed on one side of the substrate and fastened to the substrate such that the body extends from the inner wall facing the substrate And an elastic member is formed at the other end of the body, and the elastic member presses the one side of the substrate.
The elastic member may be a spring.
The pressing member may further include a damping member formed between the other end of the body and one end of the elastic member.
The damping member may include a first damping portion connected to the other end of the body, a second damping portion connected to one end of the elastic member, and a bent portion formed between the first damping portion and the second damping portion and formed in a bent shape.
The first damping portion and the second damping portion may be located on the same line.
The first damping portion and the second damping portion may be located on a parallel line.
More than one pressing member may be formed.
The elastic member can be inserted into one side of the substrate.
The pressing member may be formed integrally with the housing.
The heat dissipating member may be a heat sink.
The substrate may be one of a printed circuit board, a ceramic substrate, and a metal substrate.
The semiconductor device may include at least one of a power device and a control device.
The substrate may comprise a circuit pattern.
The substrate may further include a pad to which the pressing member is contacted or inserted.
The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings.
Prior to that, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor can properly define the concept of a term in order to describe its invention in the best possible way Should be construed in accordance with the principles and meanings and concepts consistent with the technical idea of the present invention.
The semiconductor module according to the embodiment of the present invention can suppress the warping of the substrate and increase the contact area between the substrate and the heat radiation member.
The semiconductor module according to the embodiment of the present invention can increase the contact area between the substrate and the heat dissipating member by applying a certain pressure to the substrate, thereby improving the heat dissipation performance.
1 is an exemplary view showing a semiconductor module according to an embodiment of the present invention.
2 is an exemplary view showing a damping member of a pressing member according to an embodiment of the present invention.
3 is an exemplary view showing a damping member of a pressing member according to another embodiment of the present invention.
4 is an exemplary view showing an elastic member of a pressing member according to an embodiment of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS The objectives, specific advantages and novel features of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. It should be noted that, in the present specification, the reference numerals are added to the constituent elements of the drawings, and the same constituent elements are assigned the same number as much as possible even if they are displayed on different drawings. It will be further understood that terms such as " first, "" second," " one side, "" other," and the like are used to distinguish one element from another, no. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description of the present invention, detailed description of related arts which may unnecessarily obscure the gist of the present invention will be omitted.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is an exemplary view showing a semiconductor module according to an embodiment of the present invention.
Referring to FIG. 1, a
The semiconductor element may be mounted on one side of the
The
As the insulating layer, a resin insulating layer may be used. As the resin insulating layer, a thermosetting resin such as an epoxy resin, a thermoplastic resin such as polyimide, or a resin impregnated with a reinforcing material such as a glass fiber or an inorganic filler, for example, a prepreg can be used, And / or photo-curing resin may be used, but the present invention is not limited thereto. The circuit can be applied without limitations as long as it is used as a conductive metal for a circuit in the circuit board field. Generally, the circuit can be formed of copper.
The ceramic substrate may be made of a metal-based nitride or a ceramic material. For example, the metal-based nitride may comprise aluminum nitride (AlN) or silicon nitride (SiN). Further, the ceramic material may include aluminum oxide (Al 2 O 3 ) or beryllium oxide (BeO). The material of the above-mentioned ceramic substrate is, for example, not particularly limited to this.
The metal substrate can be easily obtained at a relatively low cost and can be formed of a metal having excellent heat transfer characteristics. For example, the metal substrate may be aluminum (Al) or an aluminum alloy.
The anodic oxide layer can be produced by, for example, immersing a metal substrate made of aluminum or an aluminum alloy in an electrolyte solution such as boric acid, phosphoric acid, sulfuric acid, chromic acid, etc., applying a positive electrode to a metal substrate, and applying a negative electrode to the electrolytic solution. The anodization layer has an insulating performance, but can have a relatively high heat transfer characteristic of about 10 to 30 W / mk. Thus, the anodic oxidation layer produced using aluminum or an aluminum alloy may be an aluminum anodic oxide film (Al 2 O 3 ).
Since the anodic oxidation layer has an insulating property, a circuit layer can be formed. Further, since the anodization layer can be formed to have a thickness smaller than that of a general insulating layer, the heat radiation performance can be improved and the thickness can be reduced.
The semiconductor device may be at least one of a power semiconductor device and a control semiconductor device. For example, the power semiconductor device may be an insulated gate bipolar transistor (IGBT), a diode, or the like. Further, the control semiconductor element may be a control integrated circuit (IC). The type and number of semiconductor devices are not limited to these, and can be easily changed by those skilled in the art.
In addition, the
Further, the
The structure of the
The
The
The
The
The
One side of the
In addition, the pressing
The pressing
In the
2 is an exemplary view showing a damping member of a pressing member according to an embodiment of the present invention.
Referring to FIG. 2, the pressing
The second damping
The bending
The
The damping
3 is an exemplary view showing a damping member of a pressing member according to another embodiment of the present invention.
Referring to FIG. 3, the pressing
The second damping
The bending
The
The damping
2 and 3, the structure of the
4 is an exemplary view showing an elastic member of a pressing member according to an embodiment of the present invention.
Referring to FIG. 4, the pressing
According to an embodiment of the present invention, the
In the embodiment of the present invention, although the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the same is by way of illustration and example only and is not to be construed as limiting the present invention. It is obvious that the modification or improvement is possible.
It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
100: semiconductor module
110: substrate
111: Circuit pattern
112: first fastening portion
115: Pad
120:
130: housing
132: second fastening portion
140:
141: Body
142: first damping portion
143:
144: second damping portion
145: damping member
146: Elastic member
Claims (14)
A heat dissipating member formed on the other side of the substrate; And
And a housing formed on one side of the substrate and fastened to the substrate,
The housing includes:
A body formed to extend from an inner wall facing the substrate;
An elastic member disposed on one side of the substrate so as to press the substrate; And
And a damping member formed between the other end of the body and one end of the elastic member.
The elastic member is a spring,
Wherein the damping member comprises:
A first damping portion connected to the other end of the body;
A second damping portion connected to one end of the elastic member; And
A bent portion formed between the first damping portion and the second damping portion and formed in a bent shape;
≪ / RTI >
Wherein the first damping portion and the second damping portion are located on the same line.
Wherein the first damping portion and the second damping portion are located on a parallel line.
Wherein at least one of the pressing members is formed.
Wherein the elastic member is inserted into one side of the substrate.
Wherein the pressing member is formed integrally with the housing.
Wherein the heat dissipating member is a heat sink.
Wherein the substrate is one of a printed circuit board, a ceramic substrate, and a metal substrate.
Wherein the semiconductor device comprises at least one of a power device and a control device.
Wherein the substrate further comprises a circuit pattern.
Wherein the substrate further comprises a pad to which the pressing member is contacted or inserted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020130056471A KR101474641B1 (en) | 2013-05-20 | 2013-05-20 | Semiconductor module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130056471A KR101474641B1 (en) | 2013-05-20 | 2013-05-20 | Semiconductor module |
Publications (2)
Publication Number | Publication Date |
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KR20140136227A KR20140136227A (en) | 2014-11-28 |
KR101474641B1 true KR101474641B1 (en) | 2014-12-17 |
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KR1020130056471A KR101474641B1 (en) | 2013-05-20 | 2013-05-20 | Semiconductor module |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220160494A (en) | 2021-05-27 | 2022-12-06 | 주식회사 아모그린텍 | Ceramic substrate with heat sink and manufacturing method thereof |
KR20230008479A (en) | 2021-07-07 | 2023-01-16 | 주식회사 아모센스 | Ceramic substrate with heat sink and manufacturing method thereof |
-
2013
- 2013-05-20 KR KR1020130056471A patent/KR101474641B1/en active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220160494A (en) | 2021-05-27 | 2022-12-06 | 주식회사 아모그린텍 | Ceramic substrate with heat sink and manufacturing method thereof |
KR20230008479A (en) | 2021-07-07 | 2023-01-16 | 주식회사 아모센스 | Ceramic substrate with heat sink and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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KR20140136227A (en) | 2014-11-28 |
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