KR101465083B1 - Method for forming metal patterns of printedcircuit board - Google Patents

Abstract

The present invention relates to a method for manufacturing a printed circuit board which performs a surface process for improving delamination on the surface of a carrier board and transferring a metal layer formed on the processing surface after the metal layer is formed on the processing surface to a circuit board. For this, a method for manufacturing a printed circuit board according to the present invention includes a step (a) of performing a surface process for improving delamination on at least one side of a carrier board; a step (b) of forming a metal layer on the processing surface of the processed carrier board; and a step (c) of transferring the metal layer formed on the processing surface of the carrier board onto one side of a polymer film.

Description

[0001] METHOD FOR FORMING METAL PATTERNS OF PRINTED CIRCUIT BOARD [0002]

The present invention relates to a method of manufacturing a circuit board, and more particularly, to a method of manufacturing a circuit board by performing a surface treatment for improving the peelability of a surface of a carrier substrate, forming a metal layer on the surface of the carrier substrate, To a circuit board manufacturing method capable of manufacturing a circuit board.

Currently, a technique for forming a metal circuit pattern on a polymer film material used as a dielectric for a flexible circuit board or a package includes a method in which a thin copper foil is laminated or deposited on the surface of a polymer by using a photoresist process A method of forming a circuit pattern, a method of manufacturing a metal circuit pattern by etching copper, a method of applying copper on a soft material using a sputtering method, applying a photoresist on the copper material, and forming a pattern through a lithography process using a mask A semi-eddy process (SEMI ADDITIVE PROCESS) for filling a copper pattern in a post pattern with an electroplating method and etching the copper after removing the photosensitizer to obtain a copper wiring is generally widely used.

Particularly, in the transfer method of the method of manufacturing a flexible circuit board, a metal circuit pattern is formed on a separate carrier substrate, the metal circuit pattern is pressed and transferred to a polymer film having adhesive force, and then the carrier substrate is peeled, Thereby forming a circuit pattern on the film.

1 (a), a circuit pattern 11 is formed on a carrier substrate 10, and FIG. 1 (a) is a plan view of a printed circuit board The carrier substrate 10 and the polymer film 20 are pressed together so that one side of the polymer film 20 having an adhesive force comes into contact with the circuit pattern 11 as shown in Fig. 1 (b) The carrier substrate 10 is peeled off so that the circuit pattern 11 is formed on one side of the polymer film 20 to produce a printed circuit board.

2, in the case of manufacturing a printed circuit board using the transfer method as described above, the carrier substrate 10 on which the circuit pattern 11 is formed is pressed onto the polymer film 20, A part of the circuit pattern 11 is not transferred due to a strong interfacial adhesive force between the circuit pattern 11 and the carrier substrate 20 when the carrier substrate 10 is peeled off, Remaining phenomena may occur.

As a result, the circuit pattern 11 can not be formed on the printed circuit board as intended by the designer.

Published Japanese Patent Application No. 10-2013-0091487 (Aug. 19, 2013)

An object of the present invention is to provide a method for manufacturing a semiconductor device, which comprises performing a surface treatment on the surface of a carrier substrate to improve the peelability, forming a metal layer on the surface of the carrier substrate, And a method of manufacturing a circuit board by which a circuit board can be manufactured by transferring the same.

In order to achieve the above object, the present invention provides a method of manufacturing a semiconductor device, comprising the steps of: (a) depositing potassium hydroxide (KOH) at a concentration of 0.01 mol to 1 mol on the surface of the carrier substrate, To perform a surface treatment; (b) forming a metal layer on a treated surface of the surface-treated carrier substrate; And (c) transferring the metal layer formed on the treated surface of the carrier substrate onto one side of the polymer film.

In the first aspect of the present invention, the concentration of potassium hydroxide (KOH) may be from 0.1 mol to 0.8 mol.

In the first aspect of the present invention, the concentration of potassium hydroxide (KOH) may be from 0.2 mol to 0.6 mol.

In the first aspect of the present invention, EDA (ethylenediamine) or potassium permanganate may be mixed with the potassium hydroxide (KOH).

In the first aspect of the present invention, the surface treatment may be performed at 5 캜 to 30 캜.

In the first aspect of the present invention, in the step (b), the metal layer may be formed by a roll-to-roll wet plating method.

According to a first aspect of the present invention, the step (c) includes the steps of: (c1) forming an adhesive layer on one side of the polymer film; (c2) pressing and bonding the metal layer formed on the carrier substrate to the adhesive layer; And (c3) peeling the carrier substrate from the metal layer adhered to the adhesive layer.

In the first aspect of the present invention, the step (c2) may be performed by passing the metal layer formed on the carrier substrate and the adhesive layer formed on the polymer substrate through a pair of press rolls in a state in which they face each other.

The method may further include forming a metal circuit pattern by performing a pattern forming process on the metal layer formed on the carrier substrate before the step (c) , The metal layer on which the metal circuit pattern is formed can be transferred onto one side of the polymer film.

In the first aspect of the present invention, the method may further include, after the step (c), (d) forming a metal circuit pattern by performing a pattern forming process on the metal layer transferred to one side of the polymer film have.

In the first aspect of the present invention, after the step (c), (e) a step of transferring a metal layer formed on another carrier substrate-treated surface surface-treated for improving peelability onto the other side of the polymer film; .

In the first aspect of the present invention, the step (e) includes the steps of: (e1) forming an adhesive layer on the other side of the polymer film; (e2) pressing and adhering a metal layer formed on the other surface of the carrier substrate treated to improve the peelability to the adhesive layer; And (e3) peeling the carrier substrate from the metal layer adhered to the adhesive layer.

In the first aspect of the present invention, in the step (e2), a metal layer formed on the other surface of the carrier substrate surface-treated for improving the peelability and the adhesive layer formed on the polymer substrate face each other, They can be passed through between the rolls.

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: (e) forming a metal circuit pattern by performing a pattern forming process on a metal layer formed on another carrier substrate- (E), the metal layer on which the metal circuit pattern is formed may be transferred onto the other side of the polymer film.

(F) forming a metal circuit pattern by performing a pattern forming process on the metal layer transferred to the other side of the polymer film, in the step (e) .

In the first aspect of the present invention, before step (c), a pair of carrier substrates having at least one side surface treated for improving peelability and having a metal layer formed on the surface treated surface is prepared, In the step (c), the metal layer formed on one carrier substrate may be transferred onto one side of the polymer film, and the metal layer formed on the other carrier substrate may be transferred onto the other side of the polymer film.

In the first aspect of the present invention, the metal layer may include a metal seed layer.

In the first aspect of the present invention, it is preferable that the carrier substrate comprises a thermosetting resin, a thermoplastic resin, a polyester resin, a polyimide resin, a condensation polymer, a polyethylene naphthalate (PEN), a polyethylene terephthalate (PET), a polycarbonate And a film of a single layer or a multiple layer composed of at least one of a mixture of at least two selected from these.

In the first aspect of the present invention, the polymer film may be a thermosetting resin, a thermoplastic resin, a polyester resin, a polyimide resin, a condensation polymer, a polyethylene naphthalate (PEN), a polyethylene terephthalate (PET), a polycarbonate And a film of a single layer or a multiple layer composed of at least one of a mixture of at least two selected from these.

In the first aspect of the present invention, the metal layer may be made of Cu, Ni, Co, Ti, Al, Cr, Mo, or an alloy thereof.

In the first aspect of the present invention, the circuit board may be a flexible circuit board.

As described above, the present invention can manufacture a circuit board through a simple process of performing surface treatment on the surface of a carrier substrate for improving peelability, forming a metal layer on the treated surface, and then transferring the metal layer onto the polymer film .

In addition, since the metal layer can be formed on the carrier substrate by a simple method like the roll-to-roll wet plating method, there is an advantage that the manufacturing process is simple.

In addition, since a circuit board is manufactured by a simple method of transferring a metal layer on a polymer substrate having an adhesive layer formed thereon in a roll-to-roll manner and peeling off the carrier substrate, there is an advantage that a manufacturing process is simple.

In addition, since the pattern forming process can be performed before or after the transfer of the metal layer to form the metal circuit pattern, the process sequence can be suitably applied according to the manufacturing environment.

In addition, the metal layer of the carrier substrate is transferred to only one side of the polymer film, transferred sequentially to one side surface and the other side, and simultaneously transferred to one side surface and the other side.

In addition, there is an advantage that a surface treatment for improving the peelability of the carrier substrate is performed, and the metal layer can be more easily transferred to the polymer film.

1 is a cross-sectional view showing a manufacturing process of a conventional printed circuit board using a transfer method.
2 is a cross-sectional view showing a transfer failure in a conventional process of manufacturing a printed circuit board using a transfer method.
3 is a flowchart showing a procedure of a method of manufacturing a circuit board according to an embodiment of the present invention.
4 is a schematic view illustrating a transfer process according to an embodiment of the present invention.
5 is a graph showing a result of evaluating a bonding force between a metal layer and a polymer film of a printed circuit board according to an embodiment of the present invention.
6 is a flowchart showing a procedure of a method of manufacturing a circuit board according to another embodiment of the present invention.
7 is a schematic view showing a transfer process according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

≪ First Embodiment: Surface Treatment on Cross Section of Carrier >

A method of manufacturing a circuit board according to a first embodiment of the present invention comprises the steps of: (a) depositing potassium hydroxide (0.01 mol to 1 mol) on the surface of a carrier substrate on at least one side of a carrier substrate made of synthetic resin (B) forming a metal layer 120 on the treated surface 110 of the surface-treated carrier substrate 100, (c) treating the carrier substrate 100 Transferring the metal layer 120 formed on the surface 110 to one side of the polymer film 200 and (d) patterning the metal layer 120 transferred to one side of the polymer film 200 And performing the steps of:

First, the surface treatment step (a) will be described.

The step (a) is a step of performing a surface treatment for improving peelability on one side of the carrier substrate 100.

The carrier substrate 100 may be made of synthetic resin and may be formed of a thermosetting resin, a thermoplastic resin, a polyester resin, a polyimide resin, a condensation polymer, a polyethylene naphthalate (PEN), a polyethylene terephthalate (PET) Polycarbonate) or a mixture of two or more thereof.

Examples of the thermosetting resin include phenol resin, phenol aldehyde resin, furan resin, aminoplast resin, alkyd resin, allyl resin, epoxy resin, epoxy prepreg, polyurethane resin, thermosetting polyester resin, Resin or the like can be used.

As the thermoplastic resin, polyethylene, polypropylene, ethylene / vinyl copolymer, ethylene acrylic acid copolymer and the like can be used.

As the polyester resin, those prepared from a dihydric aliphatic and aromatic carboxylic acid and a diol or a triol may be used.

As the condensation polymer, polyamide, polyether imide, polysulfone, polyethersulfone, polybenzazole, aromatic polysulfone and the like can be used.

3 (a) and 3 (b), in order to improve the peelability of the metal layer 120 formed on one side surface of the carrier substrate 100 as described above, A surface treatment is performed on one side surface to form a treatment surface 110.

The surface treatment may be performed by sequentially performing potassium hydroxide (KOH) treatment, protonation, sensitization, and activation on one side of the carrier substrate 100.

First, one side of the carrier substrate 100 is treated with potassium hydroxide (KOH).

Particularly, the potassium hydroxide (KOH) reaction treatment is performed on one side of the carrier substrate 100 at a concentration of 0.01 mol to 1 mol, preferably 0.1 mol to 0.6 mol, more preferably 0.2 mol to 0.6 mol It is preferable to treat with potassium hydroxide (KOH) at room temperature (5 占 폚 to 30 占 폚).

When the treatment temperature is less than 5 ° C, there is a problem that the temperature change of the subsequent process bath may be generated or the moisture may be condensed to a large extent when moving to a subsequent process bath. If the treatment temperature is higher than 30 ° C, have.

At this time, the surface treatment of the carrier substrate 100 may be performed by immersing the carrier substrate in a potassium hydroxide solution.

Meanwhile, potassium hydroxide (KOH) may be treated with EDA (ethylenediamine) or potassium permanganate.

Second, protonation is performed on one side of the carrier substrate 100 treated with potassium hydroxide.

For example, the proton treatment may be performed by immersing the carrier substrate 100 in a 0.2M HCl solution for 5 minutes.

Third, sensitization is performed on one side of the proton-treated carrier substrate 100.

For example, the sensitization process may be performed by immersing the carrier substrate 100 in 'SnCl ₂ + HCl' solution at room temperature for 4 minutes.

Fourth, activation is performed on one side of the sensitized carrier substrate 100.

For example, the activation treatment may be performed by immersing the carrier substrate 100 in a PdCl ₂ + HNO ₃ 'solution at room temperature for 2 minutes.

The following Table 1 confirms the difference in bonding strength when conditions of potassium hydroxide (KOH) reaction, protonation, sensitization, and activation are different.

KOH (room temperature) Proton
process Sensitization
process Activation
process Flat
Germ
(g _f / cm) Comparative Example 1 1 mol (5 min) 5 minutes 4 minutes 2 minutes 467 Comparative Example 2 1 mol (5 min) 5 minutes 2 minutes 1 minute 454 Comparative Example 3 1 mol (5 min) 5 minutes 1 minute 30 seconds 440 Comparative Example 4 1 mol (5 min) 5 minutes 10 seconds 5 seconds 441 Comparative Example 5 1 mol (5 min) 5 minutes 4 minutes 2 minutes 467 Comparative Example 6 1 mol (3 min) 5 minutes 4 minutes 2 minutes 480 Comparative Example 7 1 mol (1 min) 5 minutes 4 minutes 2 minutes 469 Comparative Example 8 1 mol (0 min) 5 minutes 4 minutes 2 minutes 47 Electroless plating causes air bubbles and uniformity of thickness Example 1 0.5 mol (5 min) 5 minutes 4 minutes 2 minutes 366 Example 2 0.5 mol (5 min) 5 minutes 2 minutes 1 minute 363 Example 3 0.5 mol (5 min) 5 minutes 1 minute 30 seconds 380 Example 4 0.5 mol (5 min) 5 minutes 10 seconds 5 seconds 306 Example 5 0.2 mol (5 min) 5 minutes 4 minutes 2 minutes 97 Example 6 0.2 mol (5 min) 5 minutes 2 minutes 1 minute 94 Example 7 0.2 mol (5 min) 5 minutes 1 minute 30 minutes 93 Example 8 0.2 mol (5 min) 5 minutes 10 seconds 5 seconds 91 (section) 0.5 mol (3 min) 5 minutes 1 minute 30 seconds 372 (section) 0.5 mol (3 min) 5 minutes 30 seconds 15 seconds 242 (section) 0.5 mol (1 min) 5 minutes 1 minute 30 seconds 80 0.5 mol (1 min) 5 minutes 30 seconds 15 seconds 64 (both sides) 0.5 mol (3 min) 5 minutes 1 minute 30 seconds 15 (both sides) 0.5 mol (3 min) 5 minutes 30 seconds 15 seconds 21 (both sides) 0.5 mol (1 min) 5 minutes 1 minute 30 seconds 8 (both sides) 0.5 mol (1 min) 5 minutes 30 seconds 15 seconds 18

As shown in Table 1, the bonding strength decreases depending on the concentration of KOH rather than the time change of the sensitization or activation process. Particularly, when the concentration of KOH is lower than 0.5 mol, And the decrease in the bonding strength was remarkable.

Next, the metal layer forming step (b) will be described.

3 (c), the step (b) is a step of forming the metal layer 120 on the treated surface 110 of the surface-treated carrier substrate 100, The metal layer 120 may be formed.

The metal layer 120 may be made of a material such as Cu, Ni, Co, Ti, Al, Cr, Mo or alloys thereof, but is not limited thereto. In addition, the metal layer 120 may include a metal seed layer.

In the step (b), the wet plating method may be performed by a roll-to-roll wet plating method. More specifically, the carrier substrate 100 may be immersed in the plating liquid using a plurality of rolls, The metal layer 120 may be formed.

Next, the transfer step of step (c) will be described.

3 (d), the metal layer 120 formed on the processing surface 110 of the carrier substrate 100 is transferred onto one side of the polymer film 200 .

The polymer film 200 may be made of the same or similar material as the carrier substrate 100 and may be formed of a thermosetting resin, a thermoplastic resin, a polyester resin, a polyimide resin, a condensation polymer, a polyethylene naphthalate ), PET (Polyethylene Terephthalate), PC (Polycarbonate), or a mixture of two or more selected from them.

Examples of the thermosetting resin include phenol resin, phenol aldehyde resin, furan resin, aminoplast resin, alkyd resin, allyl resin, epoxy resin, epoxy prepreg, polyurethane resin, thermosetting polyester resin, Resin or the like can be used.

As the thermoplastic resin, polyethylene, polypropylene, ethylene / vinyl copolymer, ethylene acrylic acid copolymer and the like can be used.

As the polyester resin, those prepared from a dihydric aliphatic and aromatic carboxylic acid and a diol or a triol may be used.

As the condensation polymer, polyamide, polyether imide, polysulfone, polyethersulfone, polybenzazole, aromatic polysulfone and the like can be used.

More specifically, the step (c) includes the steps of: (c1) forming an adhesive layer 210 on one side of the polymer film 200; (c2) pressing and bonding the metal layer (120) formed on the carrier substrate (100) to the adhesive layer (210); And (c3) peeling the carrier substrate 100 from the metal layer 120 adhered to the adhesive layer 210.

The adhesive layer 210 is preferably an adhesive layer 210 having an adhesive strength greater than that of the interface between the carrier substrate 100 and the metal layer 120. More specifically, The epoxy resin is preferably a thermosetting type epoxy resin. The epoxy resin may be coated with a liquid polyimide and cured by heat, and various kinds of adhesive liquids may be selected and used.

In step (c2), the metal layer 120 formed on the processing surface 110 of the carrier substrate 100 is adhered to the adhesive layer 210 and adhered thereto, as shown in FIG. 4 (a) The metal layer 120 formed on the processing surface 110 of the carrier substrate 100 and the adhesive layer 210 formed on the polymer substrate 200 are passed through a pair of pressing rolls have.

In step (c3), peeling off the carrier substrate 100 from the metal layer 120 pressed on one side of the polymer film 200 may be performed by a conventional peeling method. For example, 4 (a), the carrier may be peeled off from the metal layer 120 after passing between the pair of press rolls.

Next, the pattern formation step (d) will be described.

In the step (d), a pattern formation process is performed on the metal layer 120 transferred to one side of the polymer film 200 to form the circuit board 300.

The patterning process for the metal layer 120 may be the same or similar to the known process. For example, as shown in FIG. 3 (e), the metal layer 120 may include a polymer After the photoresist layer PR for forming the film 200 is formed and then the metal layer 120 is etched as shown in FIG. 3 (f), as shown in FIG. 3 (g) The circuit board 300 can be manufactured.

The pattern formation process as described above may be performed before the step (c). Specifically, before the step (c), a pattern is formed on the metal layer 120 formed on the process surface 110 of the carrier substrate 100 It is also possible to manufacture the circuit board 300 through the process of transferring the patterned metal layer 120 onto one side of the polymer film 200 .

Alternatively, a double-sided circuit board may be fabricated by forming a metal layer having an additional pattern on the other side of the polymer film 200. For example, the double-sided circuit board may be manufactured by the same or similar process as the steps (a) to (d) A metal layer having a pattern formed on the other side of the polymer film 200 can be additionally formed. Since the forming method is the same as that of the cross section, a description thereof will be omitted.

4 (b), in the state that the carrier substrate 100 having the metal layers 120 formed on both sides of the polymer substrate face each other, The metal layer 120 is adhered to both side surfaces of the polymer substrate by passing through the rolls and the polymer film 200 is formed by performing a pattern forming process on each of the metal layers 120 to manufacture a double- It is possible.

The bonding force of the metal layer of the circuit board thus manufactured was evaluated as follows.

As described above, the bonding force of the metal layer 120 (copper plating film) transferred to the polymer film 200 was evaluated.

A metal layer 120 having a thickness of 1 μm or less was formed on the condition that the bonding force was minimized. Specifically, an electroless plating film was formed on both sides to have a thickness of about 100 nm, and electroplating was performed on only one side to form the metal layer 120.

An epoxy resin was applied to the metal layer 120 and laminated. The metal layer 120 was transferred to the polymer film 200 and the bonding force was evaluated. As a result, a bonding force of about 620 gf / cm was obtained (Red: sample 1, green: sample 2).

The bonding strength of the metal layer 120 transferred to the polymer film 200 after the heat treatment was evaluated. The results are shown in Table 2.

Heat treatment condition No heat treatment 280 ℃ 10 seconds 280 ℃ 20 seconds 280 ℃ 30 seconds The bonding force (g _f / cm) 620 565 550 545

As shown in Table 2, the present invention can reduce the bonding strength between the transferred metal layer 120 and the epoxy even after the heat treatment at 280 ° C is performed by plating the metal layer 120 directly on the polyimide (PI) Formation).

In the conventional case of directly plated on a polyimide (PI) substrate, as shown in Table 3 below, a reduction in bonding strength of about 50% occurs after two reflow processes (peak 260 degrees).

The bonding force (g _f / cm) Pretreatment Before heat treatment After reflow 2 times Sample 1 50440 246.80 Sample 2 492.80 237.00 Sample 3 446.40 253.40 Sample 4 451.00 260.74 Sample 5 553.00 240.38 Sample 6 520.40 232.00

With respect to the bonding force as described above, when compared with the case where it is manufactured according to the conventional process (forming the metal layer 120 by electroplating after electroless plating on the polyimide film), in the case of the present invention, .

≪ Second Embodiment: Surface Treatment on Both Sides of Carrier >

A method for manufacturing a circuit board according to a second embodiment of the present invention comprises the steps of: (a) applying a solution containing hydroxyl groups at a concentration of 0.01 mol to 1 mol on both sides of the carrier substrate to improve peelability on both sides of the carrier substrate 100 made of synthetic resin (B) forming a metal layer 120 on each of the two surface-treated surfaces 110 of the surface-treated carrier substrate 100; (c) (D) transferring one of the metal layers 120 formed on the both side processing surfaces 110 of the polymer film 200 to one side of the polymer film 200; And performing pattern formation processing on the metal layer 120 transferred to one side surface.

First, the surface treatment step (a) will be described.

The step (a) is a step of performing surface treatment on both side surfaces of the carrier substrate 100 to improve peelability.

Since the material of the carrier substrate 100 is the same as or similar to that of the first embodiment, a detailed description thereof will be omitted.

6 (a) and 6 (b), in order to improve the peelability of the metal layer 120 formed on both side surfaces of the carrier substrate 100, And the processing surface 110 is formed.

The surface treatment may be performed by sequentially performing potassium hydroxide (KOH) reaction, protonation, sensitization, and activation on both sides of the carrier substrate 100.

First, potassium hydroxide (KOH) reaction treatment is performed on both sides of the carrier substrate 100.

Particularly, the potassium hydroxide (KOH) reaction treatment is applied to both sides of the carrier substrate 100 at a concentration of 0.01 mol to 1 mol, preferably 0.1 mol to 0.8 mol, more preferably 0.2 mol to 0.6 mol It is preferable to treat with potassium (KOH) at room temperature (5 캜 to 30 캜).

When the treatment temperature is less than 5 ° C, there is a problem that the temperature change of the subsequent process bath may be generated or the moisture may be condensed to a large extent when moving to a subsequent process bath. If the treatment temperature is higher than 30 ° C, have.

At this time, the surface treatment of the carrier substrate 100 may be performed by immersing the carrier substrate in a potassium hydroxide solution.

Meanwhile, potassium hydroxide (KOH) may be treated with EDA (ethylenediamine) or potassium permanganate.

Second, protonation is performed on both sides of the carrier substrate 100, respectively.

For example, the proton treatment may be performed by immersing the carrier substrate 100 in a 0.2M HCl solution for 5 minutes.

Thirdly, sensitization is performed on both side surfaces of the carrier substrate 100, respectively.

For example, the sensitization process may be performed by immersing the carrier substrate 100 in 'SnCl ₂ + HCl' solution at room temperature for 4 minutes.

Fourth, activation is performed on one side of the carrier substrate 100.

For example, the activation treatment may be performed by immersing the carrier substrate 100 in a PdCl ₂ + HNO ₃ 'solution at room temperature for 2 minutes.

Next, the metal layer forming step (b) will be described.

The step (b) may be a step of forming a metal layer 120 on both side treated surfaces 110 of the surface-treated carrier substrate 100, as shown in FIG. 6 (c) The metal layer 120 may be formed.

The metal layer 120 may be made of a material such as Cu, Ni, Co, Ti, Al, Cr, Mo or alloys thereof, but is not limited thereto. In addition, the metal layer 120 may include a metal seed layer.

In the step (b), the wet plating method may be performed by a roll-to-roll wet plating method. Specifically, the carrier substrate 100 is immersed in a plating solution using a plurality of rolls, The metal layer 120 may be formed.

Next, the transfer step of step (c) will be described.

6 (d), the metal layer 120 of the metal layer 120 formed on the both side processing surfaces 110 of the carrier substrate 100 is formed as a polymer film 200 on one side thereof.

The polymer film 200 may be made of the same or similar material as the carrier substrate 100, and a detailed description thereof will be omitted.

More specifically, the step (c) includes the steps of: (c1) forming an adhesive layer 210 on one side of the polymer film 200; (c2) pressing and bonding the metal layer (120) formed on the carrier substrate (100) to the adhesive layer (210); And (c3) peeling the carrier substrate 100 from the metal layer 120 adhered to the adhesive layer 210.

The adhesive layer 210 is preferably an adhesive layer 210 having an adhesive strength greater than that of the interface between the carrier substrate 100 and the metal layer 120. More specifically, The epoxy resin is preferably a thermosetting type epoxy resin. The epoxy resin may be coated with a liquid polyimide and cured by heat, and various kinds of adhesive liquids may be selected and used.

In the step (c2), any one of the metal layers 120 formed on the both side processing surfaces 110 of the carrier substrate 100 is adhered to the adhesive layer 210 and bonded, a metal layer 120 formed on the processing surface 110 of the carrier substrate 100 and an adhesive layer 210 formed on the polymer substrate 200 face each other, It can be adhered by passing through the rolls.

In step (c3), peeling off the carrier substrate 100 from the metal layer 120 pressed on one side of the polymer film 200 may be performed by a conventional peeling method. For example, The carrier may be stripped from the metal layer 120 after passing between a pair of squeeze rolls, as shown in FIG. 7 (a).

Next, the pattern formation step (d) will be described.

In the step (d), a pattern formation process is performed on the metal layer 120 transferred to one side of the polymer film 200 to form the polymer film 200.

The process of forming the polymer film 200 by performing the pattern forming process on the metal layer 120 may be the same or similar to the process of forming the known polymer film 200. For example, after forming a photoresist layer PR for forming the polymer film 200 on the metal layer 120 as shown in FIG. 6 (e), the metal layer 120 , The circuit board 300 can be manufactured as shown in FIG. 6 (g).

The process of forming the polymer film 200 may be performed before the step (c). Specifically, before the step (c), the metal film 200 formed on the process surface 110 of the carrier substrate 100 The metal layer 120 on which the pattern is formed may be transferred onto one side of the polymer film 200 in the step (c) have. The circuit board 300 can be manufactured through such a process.

A metal layer 120 may be further formed on the other side of the polymer film 200 to form a metal layer 120 having a pattern formed on the other side of the polymer film 200, Is the same as or similar to the process of forming the patterned metal layer 120 on one side of the polymer film 200, so a detailed description thereof will be omitted.

7 (b), the carrier substrate 100, on which the metal layers 120 are formed on both side surfaces of the polymer substrate, faces each other, The metal layer 120 is adhered to both sides of the polymer substrate 200 by passing through the rolls and the polymer film 200 is formed by performing a pattern forming process on each of the metal layers 120, . ≪ / RTI >

Although the present invention has been described with reference to the preferred embodiments thereof with reference to the accompanying drawings, it will be apparent to those skilled in the art that many other obvious modifications can be made therein without departing from the scope of the invention. Accordingly, the scope of the present invention should be interpreted by the appended claims to cover many such variations.

100: carrier substrate
120: metal layer
200: polymer film
210: adhesive layer

Claims (21)

(a) subjecting a surface of the carrier substrate to surface treatment by reacting potassium hydroxide (KOH) at a concentration of 0.01 mol to 1 mol on at least one side of a carrier substrate made of synthetic resin to improve peelability;
(b) forming a metal layer on a treated surface of the surface-treated carrier substrate; And
(c) transferring the metal layer formed on the treated surface of the carrier substrate onto one side of the polymer film. The method according to claim 1,
Wherein the concentration of potassium hydroxide (KOH) is 0.1 mol to 0.8 mol. The method according to claim 1,
Wherein the concentration of potassium hydroxide (KOH) is 0.2 mol to 0.6 mol. The method according to claim 1,
Wherein said potassium hydroxide (KOH) is mixed with EDA (ethylenediamine) or potassium permanganate. The method according to claim 1,
Wherein the surface treatment is performed at 5 캜 to 30 캜. The method according to claim 1,
In the step (b)
Wherein the metal layer is formed by a roll-to-roll wet plating method. The method according to claim 1,
The step (c)
(c1) forming an adhesive layer on one side of the polymer film;
(c2) pressing and bonding the metal layer formed on the carrier substrate to the adhesive layer; And
(c3) peeling off the carrier substrate from the metal layer adhered to the adhesive layer. 8. The method of claim 7,
The step (c2)
Wherein a metal layer formed on the carrier substrate and an adhesive layer formed on the polymer substrate are passed through a pair of pressing rolls in a state in which they are opposed to each other. The method according to claim 1,
Prior to step (c)
And forming a metal circuit pattern by performing a pattern forming process on the metal layer formed on the carrier substrate,
In the step (c)
Wherein the metal layer on which the metal circuit pattern is formed is transferred onto one side of the polymer film. The method according to claim 1,
After the step (c)
(d) performing a pattern forming process on the transferred metal layer on one side of the polymer film to form a metal circuit pattern. The method according to claim 1,
After the step (c)
(e) transferring the metal layer formed on the other surface of the carrier substrate treated to improve the peelability onto the other side of the polymer film. 12. The method of claim 11,
The step (e)
(e1) forming an adhesive layer on the other side of the polymer film;
(e2) pressing and adhering a metal layer formed on the other surface of the carrier substrate treated to improve the peelability to the adhesive layer; And
(e3) peeling off the carrier substrate from the metal layer adhered to the adhesive layer. 13. The method of claim 12,
The step (e2)
Wherein the metal layer formed on the surface of the other carrier substrate subjected to surface treatment and the adhesive layer formed on the polymer substrate are bonded to each other through a pair of press rolls in a state in which they face each other for the purpose of improving the peelability. 12. The method of claim 11,
Prior to step (e)
And forming a metal circuit pattern by performing a pattern forming process on a metal layer formed on another surface of the carrier substrate treated to improve the peelability,
In the step (e)
Wherein the metal layer on which the metal circuit pattern is formed is transferred onto the other side of the polymer film. 12. The method of claim 11,
After the step (e)
(f) forming a metal circuit pattern by performing a pattern forming process on the transferred metal layer on the other side of the polymer film. The method according to claim 1,
Prior to step (c)
A pair of carrier substrates having at least one side surface treated for improving the peelability and having a metal layer formed on the surface treated surface,
In the step (c)
Wherein the metal layer formed on one carrier substrate is transferred onto one side of the polymer film and the metal layer formed on the other carrier substrate is simultaneously transferred onto the other side of the polymer film. 17. The method according to any one of claims 1 to 16,
Wherein the metal layer comprises a metal seed layer. 17. The method according to any one of claims 1 to 16,
The carrier substrate may be at least one of a thermosetting resin, a thermoplastic resin, a polyester resin, a polyimide resin, a condensation polymer, a polyethylene naphthalate (PEN), a polyethylene terephthalate (PET), a polycarbonate Wherein the film is a single layer or a composite layer film. 17. The method according to any one of claims 1 to 16,
The polymer film may be at least one of a thermosetting resin, a thermoplastic resin, a polyester resin, a polyimide resin, a condensation polymer, PEN (polyethylene naphthalate), PET (polyethylene terephthalate), PC (polycarbonate) Wherein the film is a single layer or a composite layer film. 17. The method according to any one of claims 1 to 16,
Wherein the metal layer is made of Cu, Ni, Co, Ti, Al, Cr, Mo, or an alloy thereof. The method according to claim 1,
Wherein the circuit board is a flexible circuit board.

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