KR101455063B1 - Method of manufacturing surface plasmonic color filter combined with photonic crystal structure using laser interference lithography - Google Patents

Abstract

A method of manufacturing a surface plasmonic color filter includes the steps of: (a) forming a photonic crystal structure on a substrate; (b) forming a first dielectric layer on the photonic crystal structure; (c) forming a metal film on the first dielectric layer; (d) forming a photosensitive layer on the metal film; (e) irradiating the photosensitive layer with a laser interferogram to form a nanohole array (f) forming a nano-hole array on the metal film by etching the metal film using the nano-hole array of the photosensitive layer; (g) forming a nano-hole array Removing the layer from the metal film on which the nanohole array is formed, and forming a second dielectric layer on the metal film on which the nanohole array is formed, the second dielectric layer including the same dielectric material as the dielectric material included in the first dielectric layer. The blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array are different from each other.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of fabricating a surface plasmonic color filter using a photonic crystal structure using a laser interference lithography,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface plasmonic color filter using a surface plasmon, and more particularly, to a method (production method) of a surface plasmonic color filter combined with a photonic crystal structure using laser interference lithography.

Recently, interest in information display has increased, and a demand for using portable information media has increased, and a light-weight flat panel display (FPD) that replaces a cathode ray tube (CRT) And research and commercialization are being carried out. Particularly, among such flat panel display devices, a liquid crystal display (LCD) is an apparatus for displaying an image using the optical anisotropy of a liquid crystal, and is excellent in resolution, color display and picture quality and is actively applied to a notebook or a desktop monitor have.

The liquid crystal display may comprise a color filter substrate, an array substrate (thin film transistor (TFT) array substrate), and a liquid crystal layer formed between the color filter substrate and the array substrate . Since a manufacturing process of a liquid crystal display device basically requires a number of mask processes, that is, a photolithography process, a method of reducing the number of masks in terms of productivity is required.

The color filter used in the liquid crystal display device absorbs unnecessary color light using dyes or pigments and extinguishes it. The color filter transmits only light of a desired color to realize a color, so that a white light incident on one sub- By transmitting only one of the RGB three primary colors, the transmittance of the color filter layer may be less than 30 (%). For this reason, the transmission efficiency of the panel (LCD panel) is very low, so that the power consumption by the backlight can be increased. In addition, since the color filter repeats color resist application, exposure, development and curing processes for each primary color, the process may be complicated.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a laser interference lithography capable of forming a periodic hole array pattern of a nano size in a metal film (metal layer) And a method of manufacturing a surface plasmonic color filter using a photonic crystal structure.

It is another object of the present invention to provide a method of manufacturing a surface plasmonic color filter having a simple structure, which can reduce the process cost and complicate the problems shown in the color filter structure having periodicity, And a method of manufacturing a surface plasmonic color filter to which a photonic crystal structure using laser interference lithography is coupled.

According to an aspect of the present invention, there is provided a method of manufacturing a surface plasmonic color filter, including: (a) forming a photonic crystal structure on a substrate; (b) forming a first dielectric layer on the photonic crystal structure; (c) forming a metal film on the first dielectric layer; (d) forming a photosensitive layer on the metal film; (e) forming a nano hole array having a periodicity in the photosensitive layer by irradiating the photosensitive layer with a laser interference pattern; (f) etching the metal film using the nano-hole array of the photosensitive layer to form a nano-hole array in the metal film; And (g) removing the photosensitive layer having the nanohole array from the metal film on which the nanohole array is formed and forming a metal film on the metal film on which the nanohole array is formed by using the same dielectric material as the dielectric material included in the first dielectric layer. 2 dielectric layer, and the blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array may be different from each other.

The photonic crystal structure of step (a) may be a one-dimensional photonic crystal structure, and the one-dimensional photonic crystal structure may be formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), sputtering, ), Or an evaporator method, by alternately repeating a plurality of times the two dielectric materials having different dielectric constants.

The photonic crystal structure in the step (a) may be a two-dimensional photonic crystal structure or a three-dimensional photonic crystal structure, and the two-dimensional photonic crystal structure or the three-dimensional photonic crystal structure may be formed by laser interference lithography.

According to another aspect of the present invention, there is provided a method of fabricating a surface plasmonic color filter, including: (a) forming a photonic crystal structure on a substrate; (b) forming a first dielectric layer on the photonic crystal structure; (c) forming a photosensitive layer on the first dielectric layer; (d) irradiating the photosensitive layer with a laser interferogram to form the photosensitive layer into a periodic nano dot array; (e) forming a first dielectric layer and a metal layer on the photosensitive layer of the nano dot array; (f) removing the metal layer formed on the photosensitive layer of the nano dot array and the photosensitive layer of the nano dot array to form a metal film on which a nano hole array corresponding to the nano dot array is formed; And (g) forming a second dielectric layer on the metal film on which the nanohole array is formed, the second dielectric layer including the same dielectric material as the dielectric material included in the first dielectric layer, The transmission wavelength band of the nanohole array may be different from each other.

The metal film of the step (e) may be formed by an e-beam evaporation method or a thermal evaporation method.

According to another aspect of the present invention, there is provided a method of fabricating a surface plasmonic color filter, including: (a) forming a first dielectric layer on a substrate; (b) forming a metal film on the first dielectric layer; (c) forming a photosensitive layer on the metal film; (d) forming a nano hole array having a periodicity in the photosensitive layer by irradiating the photosensitive layer with a laser interference fringe; (e) etching the metal film using a nano-hole array of the photosensitive layer to form a nano-hole array in the metal film; (f) removing the photosensitive layer having the nanohole array from the metal film on which the nanohole array is formed, and forming a second layer on the metal film on which the nanohole array is formed, the second layer including the same dielectric material as the dielectric material contained in the first dielectric layer, Forming a dielectric layer; And (g) forming a photonic crystal structure on the second dielectric layer, wherein a cutoff wavelength band of the photonic crystal structure and a transmission wavelength band of the nanohole array may be different from each other.

According to another aspect of the present invention, there is provided a method of fabricating a surface plasmonic color filter, including: (a) forming a first dielectric layer on a substrate; (b) forming a photosensitive layer on the first dielectric layer; (c) irradiating the photosensitive layer with laser interference fringes to form the photosensitive layer into a nano dot array having a periodicity; (d) forming a metal film on the first dielectric layer and the photosensitive layer of the nano dot array; (e) removing a metal layer formed on the photosensitive layer of the nano dot array and the photosensitive layer of the nano dot array to form a metal film on which a nano hole array corresponding to the nano dot array is formed; (f) forming a second dielectric layer on the metal film on which the nanohole array is formed, the second dielectric layer including the same dielectric material as the dielectric material included in the first dielectric layer; And (g) forming a photonic crystal structure on the second dielectric layer, wherein a cutoff wavelength band of the photonic crystal structure and a transmission wavelength band of the nanohole array may be different from each other.

According to another aspect of the present invention, there is provided a method of fabricating a surface plasmonic color filter, comprising: (a) forming a photonic crystal structure below a substrate; (b) forming a first dielectric layer on the substrate; (c) forming a metal film on the first dielectric layer; (d) forming a photosensitive layer on the metal film; (e) forming a nano hole array having a periodicity in the photosensitive layer by irradiating the photosensitive layer with a laser interference pattern; (f) etching the metal film using the nano-hole array of the photosensitive layer to form a nano-hole array in the metal film; And (g) removing the photosensitive layer having the nanohole array from the metal film on which the nanohole array is formed and forming a metal film on the metal film on which the nanohole array is formed by using the same dielectric material as the dielectric material included in the first dielectric layer. 2 dielectric layer, and the blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array may be different from each other.

According to another aspect of the present invention, there is provided a method of fabricating a surface plasmonic color filter, comprising: (a) forming a photonic crystal structure below a substrate; (b) forming a first dielectric layer on the substrate; (c) forming a photosensitive layer on the first dielectric layer; (d) irradiating the photosensitive layer with a laser interferogram to form the photosensitive layer into a periodic nano dot array; (e) forming a first dielectric layer and a metal layer on the photosensitive layer of the nano dot array; (f) removing the metal layer formed on the photosensitive layer of the nano dot array and the photosensitive layer of the nano dot array to form a metal film on which a nano hole array corresponding to the nano dot array is formed; And (g) forming a second dielectric layer on the metal film on which the nanohole array is formed, the second dielectric layer including the same dielectric material as the dielectric material included in the first dielectric layer, The transmission wavelength band of the nanohole array may be different from each other.

The method of manufacturing a surface plasmonic color filter according to the present invention can uniformly form a nanohole array pattern in the entire region of a metal film without using a mask by using laser interference lithography. Therefore, the present invention can improve disadvantages due to difficulty in processing due to mask alignment required in photolithography processes of conventional color filters based on dyes or pigments and expensive mask costs. In addition, the present invention uses laser interference lithography in comparison with nano patterning using e-beam lithography to form a uniform pattern over a large area in a short time, And can be advantageous over other color filters in terms of cost and yield.

The surface plasmonic color filter structure of the present invention can overcome the material limitations of the color filter by solving the problem of low light transmittance depending on the material characteristics of color filters using pigments or dyes. That is, the present invention can manufacture (implement) a surface plasmonic color filter in which the transmittance (transmission efficiency) of light in nano-sized holes of a metal film is improved by the surface plasmon resonance phenomenon. Therefore, the color filter manufactured by the present invention can have a higher transmittance than a conventional color filter based on a dye or a pigment. In addition, the present invention includes a photonic crystal structure that selectively enhances the transmittance of a wavelength band corresponding to a target color among various modes generated due to the characteristics of surface plasmon resonance, It is possible to manufacture a surface plasmonic color filter which blocks unnecessary transmission enhancement band light by using a photonic band gap (PBG) of a photonic crystal structure. Therefore, the surface plasmonic color filter of the present invention can play an important role in realizing realistic display by realizing image quality of high color purity.

The method of manufacturing a surface plasmonic color filter using laser interference lithography according to the present invention excludes the use of pigments or dyes when manufacturing a color filter and uses the surface plasmon resonance phenomenon through laser interference lithography, It is possible to fabricate a surface plasmonic color filter structure including a photonic crystal structure capable of improving light transmission efficiency and improving color purity. The color filter of the present invention, which improves the transmission efficiency of light and filters the light of a white light source by plasmon resonance, can reduce power consumption in a white light source, and can be used for flat panel displays such as LCDs and organic light emitting diodes display device or the like.

Since the surface plasmonic color filter of the present invention has a simple structure in the form of a flat plate, the complex process of the color filter substrate using the dye or pigment can be simplified and the process cost can be reduced.

In addition, since the present invention can manufacture a surface plasmonic color filter by using laser interference lithography, which is a nano patterning technique for forming a periodic hole array pattern of nano-scale on a metal film, It is possible to simplify the process procedure (or the entire process procedure) including the process and reduce the process cost (process cost). As a result, the present invention can be applied to a display device that is large-sized and commercialized at low cost.

BRIEF DESCRIPTION OF THE DRAWINGS For a more complete understanding of the drawings used in the detailed description of the present invention, a brief description of each drawing is provided.
FIG. 1 is a view (vertical cross-sectional view) illustrating a surface plasmonic color filter 100 coupled with a photonic crystal structure according to an embodiment of the present invention.
2 is a graph showing a change in transmission of light according to presence or absence of the photonic crystal structure 110 in the surface plasmonic color filter 100 of FIG.
3 is a view illustrating a method of manufacturing a surface plasmonic color filter in which a photonic crystal structure using laser interference lithography is combined according to an embodiment of the present invention.
4 is a view for explaining a method of manufacturing a surface plasmonic color filter combined with a photonic crystal structure using laser interference lithography according to another embodiment of the present invention.
5 is a view (vertical cross-sectional view) illustrating a surface plasmonic color filter 500 coupled with a photonic crystal structure according to another embodiment of the present invention.
6 is a view (vertical cross-sectional view) illustrating a surface plasmonic color filter 600 coupled with a photonic crystal structure according to another embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS For a better understanding of the present invention, and the objects attained by the practice of the invention, reference should be made to the accompanying drawings, which illustrate embodiments of the invention, and to the description in the accompanying drawings.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to embodiments of the present invention with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.

Color filters are one of the major components that constitute and drive display devices for color implementation in flat panel displays. The color filter may have a principle of selectively transmitting red, green, or blue light from a white light source to realize color.

A liquid crystal display (LCD), which is a mainstream in the flat panel display market, emits white light, which is transmitted through a liquid crystal layer from a backlight, through red, green and blue colors through a color filter layer, the amount of white light transmitted through the liquid crystal layer is controlled through the operation of a thin film transistor (TFT), which is a switching element formed in a pixel, to represent colors in various combinations of amounts of red, green, and blue light Principle.

Another typical example of a flat panel display is an organic light emitting diode (OLED) device. The organic light emitting diode (OLED) display device realizes red, green, and blue in two ways. First, there is a method of implementing a sub-pixel using three different organic light emitting materials for emitting red, green, and blue light. Second, there is a method of forming red, green, and blue , And a color filter (a color filter including a pigment or a dye) that transmits blue light. In each of the above two methods (for example, when the organic light emitting diode is an active mode organic light emitting diode), in order to drive each sub pixel, a switching element (for example, an organic thin film transistor (organic thin-film transistor, OTFT).

In manufacturing a color filter using a dye or pigment, a photolithography process is required, and a large number of mask processes are required for the color filter. In the production of color filters using dyes or pigments, the TFT substrate, which is a switching element of the backplane, and the color filter substrate are divided into sub-pixels due to the characteristics of the operation of the flat panel display, Is required. In addition, to perform color separation between each pixel, an overcoat functioning to flatten (flatten) the pixel and a light-shielding film functioning to block the TFT, gate line, Sub-pixels) are formed in a color filter using a dye or a pigment, which complicates the process.

In addition, the color filter technique applied to a commercialized flat panel display uses the material characteristics of pigments or dyes to absorb unnecessary color light and transmit only the target color light, so that the transmittance is not more than 30 (%) , There may be a drawback that power consumption by a backlight is increased in order to generate a high luminance.

On the other hand, researches have been made to propose a color filter with increased transmission efficiency by adopting a phenomenon in which the amount of light passing through a nano-sized hole through a surface plasmon resonance phenomenon is maximized. In order to selectively transmit the hue of a specific wavelength band using a surface plasmon, nano-sized holes must be patterned in a metal film (metal thin film) at regular intervals. However, e-beam lithography or ion milling (Ion etching) have been reported to realize a nano hole array pattern.

In more detail, a hole array pattern formed of a plurality of nano-sized holes having a periodicity in the metal thin film layer is formed, and a plasmon effect (a surface plasmon resonance The present invention is applied to a color filter using a color filter. Surface plasmon resonance can be a phenomenon that increases the transmission (transmission efficiency) of light passing through a nano-sized hole.

The color filter selectively transmits red, green or blue light in a white light source and is widely used as a display component such as a liquid crystal display or an organic light emitting diode. In order to be applied to a display device, a filter structure having a uniform performance in a large area The technology that can be created is important, and lowering the fair price is also an important issue. From this point of view, expensive processes such as e-beam lithography, which require a lot of time, can not help but impede industrialization.

In other words, studies using e-beam lithography or ion milling (ion etching) have been published to realize a nano-size hole array pattern having the above-mentioned constant period However, such a process is costly and requires a lot of time. Therefore, it is inevitably a factor that hinders the large-scale and low-cost process for commercialization.

FIG. 1 is a view (vertical cross-sectional view) illustrating a surface plasmonic color filter 100 coupled with a photonic crystal structure according to an embodiment of the present invention.

Referring to FIG. 1, a surface plasmonic color filter (or a surface plasmonic color filter structure including a photonic crystal structure) 100 having a photonic crystal structure bonded thereto includes a substrate 105, a photonic crystal structure 110, A metal layer 120 on which a nano hole array pattern having a nano-sized period is formed, and a second dielectric layer 125. A photonic crystal structure 110, a first dielectric layer 115, a metal film 120 and a second dielectric layer 125 are stacked in this order on a substrate 105 so that the surface plasmonic color filter 100 is manufactured in a plate form . The surface plasmonic color filter 100 may be a filter corresponding to one pixel (or a sub-pixel) included in a TFT array substrate of a liquid crystal display (LCD), for example.

A transparent substrate 105 can be used because external light is applied to generate surface plasmon at the interface between the surface of the metal film 120 and the dielectric (the first dielectric layer 115 and the second dielectric layer 125). The substrate 105 may be a transparent flat substrate such as a grass substrate or a flexible substrate such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) ) Substrate. Thus, the surface plasmonic color filter 100 of the present invention can be used as a component of a flat panel display, a flexible display, or a transparent display.

When a surface plasmon resonance occurs, a mode of various orders is generated, and unnecessary light is transmitted through a wavelength band other than a target color to be transmitted, which causes a problem of poor color purity. 1, the color filter structure 100 of the present invention includes a photonic crystal structure 110 interposed between a substrate 105 and a metal film 120 to form a photonic crystal structure 110 in accordance with a wavelength band that is unnecessarily transmitted, A photonic band gap (PBG) may be formed to reduce or eliminate the transmittance of light in the band. The degree of decrease in the transmittance is influenced by the degree of formation of the photonic band gap, which is influenced by the number of times the materials (dielectric materials) having different refractive indices are alternately (alternately) repeated and the difference in refractive index between the materials .

The photonic crystal structure 110 is formed (bonded or embedded) on the substrate 105 and may be, for example, a one-dimensional photonic crystal structure. The photonic crystal (photonic crystal) 110 is a crystal having a periodic structure of about the wavelength of light, or a structure having optical properties or a structure made to have such properties. Such a photonic crystal may mean a material having a lattice period of a length similar to the wavelength of light corresponding to visible light.

In another embodiment of the photonic crystal structure 110, two or more materials having different indices of refraction or permittivity may be regularly arranged in the form of a lattice structure. The photonic crystal structure 110 includes a photonic band gap (PBG) that blocks (prevents) transmission of light in a specific wavelength band. That is, the photonic crystal structure 110 forming the photonic band gap can block light in an unnecessary wavelength band (plasmon resonance mode in an unnecessary wavelength band), thereby improving the color purity characteristic of the color filter. The photonic bandgap can be affected by the dielectric constant (permittivity) of the dielectric material included in the photonic crystal structure 110 and can prevent electromagnetic waves having a specific frequency or wavelength from propagating into the photonic crystal. Incident light having a frequency (wavelength) other than the frequency corresponding to the optical bandgap transmits the photonic crystal.

The photonic crystal structure 110 shown in Fig. 1 may be a one-dimensional photonic crystal structure including four layers (two pairs of layers). The one-dimensional photonic crystal structure may be formed by alternately (alternately) forming two or more kinds of dielectric materials having different refractive indexes (or dielectric constants) to form four or more layers, for example, four layers the one-dimensional photonic crystal is Al ₂ O ₃ material in the bottom layer, the ZnS material in the upper layer, and the Al ₂ O ₃ material in the upper layer of the structure, can be formed by the ZnS material repeatedly to the upper layer.

In the one-dimensional photonic crystal structure, as the number of repeating layers increases, the influence of the photonic bandgap increases, so that the stop band of the light-related transmission becomes narrower and deeper. In this case, since the stop band can be adjusted more finely, it can be advantageous from the viewpoint of designing the transmission curve to improve the color purity. Therefore, the number of repetitions of each material in the photonic crystal structure is not limited to four, and the photonic bandgap is properly formed, so that a bandwidth having a peak value of a transmission band associated with the metal film 120 can be reduced . The light transmission according to the material constituting the one-dimensional photonic crystal structure is shown in Fig.

Since the photonic crystal structure 110 includes a structure in which materials having different dielectric constants are alternately arranged (arranged) to form a photonic band gap for a specific wavelength band (specific frequency band), the photonic crystal structure 110 Dimensional photonic crystal structure shown in FIG. 1 and another embodiment of the photonic crystal structure 110 is not limited to a one-dimensional photonic crystal structure (two-dimensional photonic crystal structure) or a three-dimensional photonic crystal structure Three-dimensional photonic crystal structure). A two-dimensional photonic crystal structure is a photonic crystal having a two-dimensional periodicity and a refractive index that changes, and has no change in the z-axis, and arranges materials having different refractive indexes periodically on an x-y plane. That is, a two-dimensional photonic crystal structure can be produced by merely piercing holes in a material. The three-dimensional photonic crystal structure is a photonic crystal having a three-dimensional periodicity and a refractive index that varies, and materials having different refractive indices in the x direction, the y direction, and the z direction are periodically arranged and the optical bandgap in the x direction, the y direction, Lt; / RTI > The three-dimensional photonic crystal structure can be fabricated by stacking silica spheres. As the number of repeating layers in the two-dimensional photonic crystal structure or the three-dimensional crystal structure increases, the influence of the photonic band gap becomes larger, so that the stop band of the light-related transmission can be narrower and deeper.

The arrangement position of the photonic crystal structure 110 is determined by the position of the substrate 105 and the resonance wavelength band of the surface plasmon since only the nature of the metal 120 and the state of the interface between the metal 120 and the dielectric 115 or 125, 0.0 > 115 < / RTI > That is, in another embodiment of the present invention, the photonic crystal structure 110 is not disposed between the substrate 105 and the dielectric 115, but may be formed on or below the second dielectric layer 125 It is possible.

The first dielectric layer 115 is formed on the photonic crystal structure 110 and the thickness of the first dielectric layer 115 may be, for example, 10 nm or more and 1000 nm or less. A first dielectric layer 115, for example, for example, include a general dielectric (dielectric material), such as LiF, or SiO _2, or Al ₂ O _3, MgO, ZnO, ZnS, or such as ITO (Indium Tin Oxide) And a dielectric that is a conductive oxide (a transparent conductive oxide).

In order to minimize the type of surface plasmon mode and to increase the monochromaticity of the transmitted color, it is advantageous that the surroundings of the metal film 120 provide the same environment of the dielectric material. That is, when different kinds of dielectric materials are applied to both surfaces of the metal film 120, different plasmon resonance modes may occur and peaks may occur in unnecessary wavelength bands in the transmission spectrum. Thus, a first dielectric layer 115 and a second dielectric layer 125 having the same kind of dielectric material are applied on and under the metal film 120. That is, the metal film 120 is formed of dielectric materials 115 and 125 (which are the same material as each other) for plasmon mode matching (matching of surface plasmon resonance modes respectively occurring on both surfaces of the metal film 120) The dielectric constant of the dielectric material of the first dielectric layer 115 and the dielectric constant of the dielectric material of the second dielectric layer 125 may be equal to each other. By making the material of the first dielectric layer 115 and the material of the second dielectric layer 125 the same, the transmission efficiency of the surface plasmon can be maximized by matching the transmission wavelength band. Dielectrics 115 and 125 may serve to keep surface plasmonic color filter structure 100 flat.

The metal film 120 is formed on the first dielectric layer 115 and has a first direction (first direction axis) (e.g., a transverse direction) and a second direction (second direction axis) In the longitudinal direction) and have holes each having a nano size. Each of the holes may be a nano hole having a nano-size (sub-wavelength size of incident light (for example, red light)). If a small hole having a wavelength or less is periodically arranged in the metal film 120, the transmittance of light to the excitation of the surface plasmon can be greatly amplified. The holes are arranged in a two-dimensional manner through various arranging methods such as a method in which the holes are repeated in the orthogonal direction or the hexagonal direction (first direction, second direction, and third direction forming an angle of 120 degrees with respect to each other) Lt; / RTI >

The holes may be repeated a plurality of times at least three times along a repeated direction with a constant period. More specifically, the holes included in the metal film 120 are periodically arranged on at least two direction axes and at least three can be disposed in each of the direction axes. For example, in the case of three direction axes, in order to transmit light of a specific wavelength band through surface plasmon resonance, a first direction axis, a second direction axis, and a third direction At least three holes in each of the axes may be disposed in the plane of the metal film 120. If there are four or more directional axes, holes may be arranged in each of the directional axes which are at the same angle with each other, as in the case of three directional axes described above.

On the other hand, in the case of forming an array repeated in mutually orthogonal first and second directions, the number of holes arranged in the first direction and the second direction is such that light of a specific wavelength band is transmitted through surface plasmon resonance For example, at least nine. The shape of each of the holes may be circular, elliptical, rectangular, or triangular with a diameter of sub-wavelength diameter of incident light, for example white light. For example, each of the holes has a size (diameter) of 50 (nm) or more and 1 (μm) or less, and the interval (pattern period) between the holes is 50 And can be 1 (μm) or less.

The wavelength band of the color (light) to be filtered by the color filter 100 according to the period (pattern period) of the hole included in the metal film 120 and the size of the hole (pattern shape) ). For example, if the period of the holes is relatively large, the wavelength band of color (visible light) is shifted toward the longer wavelength side, and the larger the hole size, the wider the pass band.

The metal film 120 may include, for example, aluminum (Al), gold (Au), silver (Ag), or copper (Cu). The metal film 120 may have a thickness of, for example, 10 (nm) to 400 (nm).

A pass band of a hole array pattern composed of holes of the metal film 120 and a stop band of the photonic crystal structure 110 may be different from each other .

The second dielectric layer 125 is formed on the metal film 120 and the dielectric material of the second dielectric layer 125 can fill the inside of the holes of the metal film 120. The second dielectric layer 125, for example, for example, include a general dielectric (dielectric material), such as LiF, or SiO _2, or Al ₂ O _3, MgO, ZnO, ZnS, or such as ITO (Indium Tin Oxide) And a dielectric that is a conductive oxide (a transparent conductive oxide). The thickness of the second dielectric layer 125 may be, for example, 10 (nm) or more and 1000 (nm) or less.

The color filter 100 may be configured to extract three colors of red, green, or blue on a pixel-by-pixel basis in a white light emitted from a back light that can be disposed on the second dielectric layer 125, Or the like.

The color filter 100 forms a structure in which only light of a specific wavelength is selectively transmitted by forming a plurality of nano-sized holes having a predetermined period in the metal film 120, . That is, the color filter 100 operates as a color filter by utilizing the surface plasmon resonance phenomenon in the metal film 120 having the periodic nanopattern of holes.

The surface plasmon resonance phenomenon is a nano-sized metal structure. When light is incident, free electrons of a specific wavelength and a surface of a metal thin film resonate to propagate light of a specific wavelength along the interface between the metal and the dielectric. In a metal thin film structure in which a periodic pattern is formed, the resonance wavelength band can be set by changing the period of the pattern and appropriately combining the dielectric constants of the metal and the dielectric material. In the plasmonic structure having the hole (pattern), only light of a specific wavelength capable of forming a surface plasmon by the incident light can pass through the metal structure, and all the remaining light is transmitted through the metal film Reflection or absorption is performed.

Surface plasmons are collective vibrations of free electrons induced on the metal film surface by the electric field of incident light, which means collective vibration of free electrons occurring on the surface of the metal film, and exist locally on the surface of the metal film. Plasma excited by the electric field of the incident light on the surface of a planar metal layer is also called a surface plasmon because it propagates on a metal surface. In the wavelength band where the surface plasmon resonance occurs, the electric field of the incident light and the plasmon are coupled to each other to maximize the amount of light passing through the hole (nano hole), and the amount of the hole becomes the aperture ratio Thereby increasing the transmittance.

2 is a graph showing a change in transmission of light according to presence or absence of the photonic crystal structure 110 in the surface plasmonic color filter 100 of FIG.

Referring to FIG. 2, the G / HA line (gray line) shows the transmission or transmittance according to the wavelength of the incident light for the surface plasmonic color filter of FIG. 1 without the photonic crystal structure 110 And the G / ZnS_Al ₂ O ₃ / HA line (the red line, the line below the rightmost region of the graph) forms Al ₂ O ₃ and ZnS material for photonic bandgap formation (A total of four layers) are stacked to form a photonic crystal structure 110 of the simplest one-dimensional structure and a metal nano-hole array 120 is formed on the photonic crystal structure 110 1 to the surface plasmonic color filter 100 according to the wavelength of the incident light.

The influence of the photonic band gap in the photonic crystal structure 110 stacked in four layers is weak, but the light and blue wavelength band (for example, 440 nm) of the green wavelength band (for example, 500 (nm) ) Is reduced in the light of FIG. It can be seen that the color purity is increased without deviating much from the maximum transmittance because the bandwidth is narrowed even in the red transmission band (for example, 630 nm). By increasing the number of layers of the photonic crystal structure 110 or by forming a two-dimensional photonic crystal structure or a three-dimensional photonic crystal structure to increase the influence of the photonic band gap, the effect of improving the color purity can be further maximized.

In order to selectively transmit the hue of a specific wavelength band by using the surface plasmon, nano-sized holes should be patterned at regular intervals in the metal film (120 in FIG. 1) as described above. The nano hole array pattern is implemented by e-beam lithography or ion milling. However, the results of the study are limited to μm Staying.

3 is a view illustrating a method of manufacturing a surface plasmonic color filter in which a photonic crystal structure using laser interference lithography is combined according to an embodiment of the present invention. FIG. 3 illustrates an entire process of implementing a plasmonic color filter combined with a photonic bandgap and a surface plasmon effect described with reference to FIG.

Referring to FIG. 3, a photonic crystal structure 305 is formed on a glass substrate 300. Thereafter, a first dielectric layer (not shown) is formed on the photonic crystal structure 305. Thereafter, a metal film 310 is formed on the first dielectric layer. Then, a photoresist layer (a photoresist layer, a PR layer) 315 is formed on the metal film 310. The photosensitive layer 315 may be a negative photosensitive layer or a positive photosensitive layer. In another embodiment of the present invention, a plastic substrate may be used in place of the transparent glass substrate 300. The plastic substrate may be a transparent flexible substrate including PET, PEN, or ITO (Indium Tin Oxide).

The photonic crystal structure 305 may be, for example, a one-dimensional photonic crystal structure, and the one-dimensional photonic crystal structure may be formed by repeating (alternatingly) a plurality of times (for example, two times) two dielectric materials having different dielectric constants . ≪ / RTI > The one-dimensional photonic crystal structure can be formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), sputtering, spin coating, or sputtering without masking or special patterning techniques. Or an evaporator method such as electron beam evaporation (e-beam evaporation) or the like. In order to form the photonic bandgap, the photonic crystal structure 305 may be fabricated as a two-dimensional photonic crystal structure or a three-dimensional photonic crystal structure, and may be a laser interference lithography (described later) Laser interference lithography method) can be used.

The thickness of the first dielectric layer may be, for example, 10 nm or more and 1000 nm or less. The first dielectric layer includes a general dielectric material (dielectric material) such as LiF or SiO ₂ , or a conductive oxide such as Al ₂ O ₃ , MgO, ZnO, ZnS, or ITO (Indium Tin Oxide) ). ≪ / RTI >

The metal film 310 may include, for example, aluminum (Al), gold (Au), silver (Ag), or copper (Cu). The metal film 310 may have a thickness of, for example, 10 (nm) to 400 (nm).

The photosensitive layer 315 is then used in laser interference lithography to form a nano-sized periodic hole array pattern (nano hole array pattern) in the photosensitive layer 315 Exposure (exposure) of the interference fringes of the lasers on the photosensitive layer 315 is performed. In the laser interferometric lithography method, a nano pattern having a constant period can be formed in the photosensitive layer 315 using an interference fringe generated by at least two lights (lasers). Thereafter, the photosensitive layer 315 having a nano-hole array is formed by dividing a portion exposed (irradiated) to the laser interferogram by using a photosensitive material developing solution (PR development). In more detail, the laser interference lithography uses a two-dimensional (1-D) line array pattern to form an interference fringe. When two light beams (laser beams) are used, the interference pattern is formed in a first direction and a second direction (Or the difference in the degree of energy experienced by the photosensitive layer depending on the thickness of the photosensitive layer) by exposing the photosensitive layer twice in the direction of 90 degrees from the first direction The shape of the pattern can be changed into a hole or a dot through the development depending on whether the photosensitive layer is a negative photosensitive layer or a positive photosensitive layer. For example, in the case of using a photographic sensitive layer, a portion exposed (exposed) to light twice during development using a photosensitive material developing solution (PR development) after exposure in first and second directions The hole pattern (nanohole array pattern) can be formed. Alternatively, a dot pattern (nano dot array pattern) may be formed after development if the exposure energy is adjusted so that a portion exposed to light at least once is removed. In the case of the negative photosensitive layer, after the exposure in the first and second directions, the unexposed portion may be removed during development to form a hole pattern. That is, it is possible to form a nano-sized periodic hole array (a periodic nanohole array) in the photosensitive layer 315 by irradiating the photosensitive layer 315 with laser interference fringes.

Laser interference lithography is a technique of engraving a pattern using a light interference pattern, in which two or more coherence light patterns are patterned to produce an interference pattern having a uniform periodicity, exposed to a photoresist coated on a substrate The nanopattern can be very effective in the fabrication of periodic nanostructures through the development process and can be patterned to the area of m units according to the setting level of the laser interferometric lithography equipment. The laser interference lithography can be easily used in a large-area process, can realize a large area pattern, and does not require masking in particular, so that the process can be simplified and the process cost can be reduced. In addition, masking is unnecessary when making periodic patterns by laser interference lithography, so that it is possible to eliminate the difficulty of alignment of masks required for photolithography of color filters based on existing dyes or pigments and burden on mask cost. Accordingly, the present invention can produce a surface plasmonic color filter having improved transmission efficiency characteristics and color purity characteristics compared to conventional color filters while simplifying the process procedure and reducing the process cost by applying laser interference lithography.

Next, when the metal film 310 is etched using a nano-hole array of the photosensitive layer 315 (by injecting an etchant through the nano-hole array of the photosensitive layer 315), the metal film 310 A nano-patterned metal layer is formed. Thereafter, plasma etching is performed using oxygen plasma from the metal film 310 on which the nano-hole array is formed and the photosensitive layer 315 having the nano-hole array is subjected to a PR striping process using a stripping solvent or may be stripped and removed by a photoresist stripping process. The nanohole array may be configured such that holes each having a nano-size (e.g., sub-wavelength size of incident light (e.g., red light)) are arranged in a first direction (Arranged in a horizontal direction) and a second direction (for example, a longitudinal direction). When small holes of wavelengths or less are periodically arranged in the metal film 310, the transmittance of light to the excitation of the surface plasmon can be greatly amplified. The shape of each of the holes may be circular, elliptical, rectangular, or triangular with a diameter of sub-wavelength diameter of incident light, for example white light. For example, each of the holes has a size (diameter) of 50 (nm) or more and 1 (μm) or less, and the interval (pattern period, or pitch) May be 50 (nm) or more and 1 (占 퐉) or less.

Next, when a second dielectric layer 320 including the same dielectric material as the dielectric material included in the first dielectric layer is formed (deposited) on the metal film 310 on which the nanohole array is formed, (Surface plasmon resonance wavelength band) can be selectively transmitted by the nanohole array of the metal film 310 as shown in the lower left corner, and the color purity of the transmitted wavelength can be selectively controlled by the photonic crystal structure 305 A surface plasmonic color filter combined with a photonic crystal structure utilizing the surface plasmon resonance phenomenon of the present invention which can be improved can be manufactured (formed). The blocking wavelength band of the photonic crystal structure 305 and the transmission wavelength band of the nanohole array of the metal film 310 may be different from each other. The dielectric material of the second dielectric layer 320 may fill the inside of the holes of the metal thin film 310. The thickness of the second dielectric layer 320 may be, for example, 10 (nm) or more and 1000 (nm) or less. The second dielectric layer 320 may include a dielectric material such as LiF or SiO ₂ or a conductive oxide such as Al ₂ O ₃ , MgO, ZnO, ZnS, or ITO (Indium Tin Oxide) Transparent conductive oxide).

As described above, according to the present invention, by using a laser interference lithography capable of forming a nano-sized hole pattern repeated with a certain period using an interference fringe of two or more lights, the photonic crystal structure 305, A method of manufacturing (forming) a surface plasmonic color filter including a metal film 310 having a hole array of a predetermined size can be provided.

4 is a view for explaining a method of manufacturing a surface plasmonic color filter combined with a photonic crystal structure using laser interference lithography according to another embodiment of the present invention. FIG. 4 shows the entire process of implementing a plasmonic color filter combined with a photonic bandgap and a surface plasmon effect described with reference to FIG.

Referring to FIG. 4, a photonic crystal structure 405 is formed on a glass substrate 400. Thereafter, a first dielectric layer (not shown) is formed on the photonic crystal structure 405. Thereafter, a photosensitive layer (photosensitive layer) 410 is formed (applied) on the first dielectric layer. The photosensitive layer 410 may be a negative photosensitive layer or a positive photosensitive layer. In another embodiment of the present invention, a plastic substrate may be used instead of the glass substrate 400. The plastic substrate may be a transparent flexible substrate including PET, ITO, or PEN.

The photonic crystal structure 405 may be, for example, a one-dimensional photonic crystal structure, and the one-dimensional photonic crystal structure may be formed by repeating (alternatingly) a plurality of times (for example, two times) two dielectric materials having different dielectric constants . ≪ / RTI > The one-dimensional photonic crystal structure can be formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), sputtering, spin coating, or e-beam evaporation without masking or special patterning techniques. ) Can be easily formed by using an evaporator method or the like. The photonic crystal structure 405 may be fabricated with a two-dimensional photonic crystal structure or a three-dimensional photonic crystal structure to form a photonic bandgap. In order to form a two-dimensional photonic crystal structure or a three-dimensional photonic crystal structure, a laser interference lithography Can be used.

The thickness of the first dielectric layer may be, for example, 10 nm or more and 1000 nm or less. The first dielectric layer includes a general dielectric material (dielectric material) such as LiF or SiO ₂ , or a conductive oxide such as Al ₂ O ₃ , MgO, ZnO, ZnS, or ITO (Indium Tin Oxide) ). ≪ / RTI >

The photosensitive layer 410 is then used for laser interference lithography to form a nano-sized periodic dot array pattern (nano dot array pattern) on the photosensitive layer 410 The interference fringes of the lasers are exposed on the photosensitive layer 410. The laser interference lithography can form a nano pattern having a predetermined period on the photosensitive layer 410 using the interference fringes of at least two lights (lasers), and the laser interference lithography method described in the description of FIG. 3 Can be applied. Thereafter, a developing process using a photosensitive material developing solution (PR development) is applied to a portion exposed to the laser interference fringe or a portion not exposed to the laser interference fringe, so that a photosensitive layer 410 having a nano dot array can be formed. That is, the photosensitive layer 410 can be formed into a nano-sized periodic dot array (a periodic nano dot array) by irradiating the photosensitive layer 410 with laser interference fringes. In the case of using the nano dot array, the metal etching process is omitted in the manufacturing method of the present invention, so that the manufacturing process can be simplified and the process cost can be further reduced compared with the manufacturing method of FIG. The nanodata array may be fabricated on a first dielectric layer having nano-sized (e.g., sub-wavelength) wavelengths of incident light (e.g., red light) May be a structure that is periodically arranged in a first direction (e.g., a lateral direction) and a second direction (e.g., a longitudinal direction). The present invention can manufacture a surface plasmonic color filter having improved transmission efficiency characteristics and color purity characteristics compared to conventional color filters while simplifying a process procedure and reducing a process cost by applying the laser interference lithography described above.

Next, a metal film 415 is formed (or deposited) on the first dielectric layer (or the first dielectric layer) and the nano dot array photosensitive layer 410. The metal film 415 may be formed by an e-beam evaporation method or a thermal evaporation method.

Next, the metal layer 415 formed on the nano dot array photosensitive layer 410 and the nano dot array photosensitive layer 410 is removed by a lift-off method (a solvent for dissolving the photoresist PR) A nano-patterned metal layer 415 having a nano-hole array corresponding to the nano dot array is formed. The metal film 415 may include, for example, aluminum (Al), gold (Au), silver (Ag), or copper (Cu). The metal film 415 may have a thickness of, for example, 10 (nm) to 400 (nm). The shape of each of the holes included in the nanohole array may be circular, elliptical, rectangular, or triangular having a sub-wavelength diameter of incident light, for example, white light. When a small hole having a wavelength or less is periodically arranged in the metal film 415, the transmittance of light to the excitation of the surface plasmon can be greatly amplified. For example, each of the holes has a size (diameter) of 50 (nm) or more and 1 (μm) or less, and the interval (period or pitch) between the holes is 50 (nm) or more and 1 (μm) or less. A developer (for example, SU-8 photoresist solvent) is removed in order to remove the nano dot array photosensitive layer 410 and the metal layer 415 formed on the nano dot array photosensitive layer 410 in the PR-lift off process Can be used.

Next, when a second dielectric layer 420 including the same dielectric material as the dielectric material included in the first dielectric layer is formed on the metal film 415 on which the nanohole array is formed, As shown in the drawing, the surface plasmon resonance phenomenon of the present invention, which can selectively transmit light of a specific wavelength by the nanohole array of the metal film 415 and can improve the color purity of the transmission wavelength by the photonic crystal structure 405 A surface plasmonic color filter can be fabricated (formed) using the color filter. The blocking wavelength band of the photonic crystal structure 405 and the transmission wavelength band of the nanohole array of the metal film 415 may be different from each other. The dielectric material of the second dielectric layer 420 may fill the inside of the holes of the metal thin film 415. The thickness of the second dielectric layer 420 may be, for example, 10 (nm) or more and 1000 (nm) or less. A second dielectric layer 420, for example, normal dielectric comprises a (dielectric material), or Al ₂ O _3, MgO, conductive oxides such as ZnO, ZnS, or ITO (Indium Tin Oxide) such as LiF, or SiO ₂ ( Transparent conductive oxide).

As described above, according to the present invention, a photonic crystal structure 405 and a nano-sized hole array (hole) 405 are formed by using laser interference lithography capable of forming a pattern having a constant period using an interference fringe of two or more lights. and a metal film 415 on which a plurality of arrays are formed.

The element that determines the transmission band in the color filter structure of the present invention is a surface plasmon resonance wavelength band. The factor determining the resonance wavelength band of the surface plasmon may be the dielectric constant of the metal (metal film), the dielectric constant of the dielectric material (dielectric layer), the thickness of the metal film, the periodicity (period of the hole pattern), or the size of the hole. Therefore, since the element determining the transmission band of the surface plasmonic color filter is only the state of the interface between the metal film and the dielectric layer, the position of the photonic crystal structure can be freely arranged. That is, another embodiment of the present invention may be arranged in the order of substrate / general plasmonic color filter / photonic crystal structure, or photonic crystal structure / substrate / general plasmonic color filter. Therefore, the color filter structure of FIG. 1 can be modified as shown in FIGS. 5 and 6, and the order of the process steps shown in FIGS. 3 and 4 may be changed according to the arrangement order of the components included in the color filter structure. have.

5 is a view (vertical cross-sectional view) illustrating a surface plasmonic color filter 500 coupled with a photonic crystal structure according to another embodiment of the present invention.

5, a surface plasmonic color filter (or a surface plasmonic color filter including a photonic crystal structure) to which a photonic crystal structure is coupled includes a substrate 505, a first dielectric layer 510, a metal film 515, a second dielectric layer 520, and a photonic crystal structure 525. A first dielectric layer 510, a metal film 515, a second dielectric layer 520, and a photonic crystal structure 525 may be stacked in this order on a substrate 505. The surface plasmonic color filter 500 may be, for example, a filter corresponding to one pixel (or sub-pixel) included in a TFT array substrate of a liquid crystal display (LCD).

Except for the arrangement relationship (formation order) of the substrate 505, the first dielectric layer 510, the metal film 515, the second dielectric layer 520, and the photonic crystal structure 525, the substrate 505, The description of the constitution (composition including the constituent materials) and the function (function) of the photodetector 510, the metal film 515, the second dielectric layer 520 and the photonic crystal structure 525 are the same as those of the substrate 105, Since the structure and operation of the first dielectric layer 115, the metal film 120, the second dielectric layer 125 and the photonic crystal structure 110 are similar to those of the first and second dielectric layers 115 and 125, And the like of the surface plasmonic color filter 100 shown in FIG. 1 can be referred to for the description of the structure, operation, and the like of the substrate 105 and the like of the surface plasmonic color filter 100 shown in FIG.

In order to increase the flatness of the photonic crystal structure 525, it may be necessary to increase the flat characteristics of the second dielectric layer 520. Thus, to increase the flatness of the second dielectric layer 520, it may be desirable to stack the second dielectric layer 520 to a sufficient thickness.

An embodiment of a method of manufacturing the surface plasmonic color filter 500 can be described with reference to Figs. 5 and 3 as follows. An embodiment of the method of manufacturing the surface plasmonic color filter 500 may be combined with the embodiment of the manufacturing method of Fig. That is, an embodiment of the method of manufacturing the surface plasmonic color filter 500 includes the steps of forming a first dielectric layer 510 on a substrate 505 and a step of forming a metal film 515 on the first dielectric layer 510 Forming a photosensitive layer similar to the photosensitive layer 315 of FIG. 3 on the metal film 515; irradiating the photosensitive layer with a laser interferogram and irradiating the nanohole array Forming a nano hole array having a periodicity in the photosensitive layer by developing the pattern through a developing process and etching the metal film 515 using the nanohole array of the photosensitive layer etching the metal film 515 to form a nano-hole array on the metal film 515; removing the nano-hole array photosensitive layer from the metal film 515 on which the nano-hole array is formed; And the first dielectric layer 510 Over and forming a second dielectric layer 520 comprising the same dielectric material as the dielectric material, the second dielectric layer 520 may include the step of forming a photonic crystal structure (525). The blocking wavelength band of the photonic crystal structure 525 and the transmitting wavelength band of the nanohole array of the metal film 515 may be different from each other.

Another embodiment of the method of manufacturing the surface plasmonic color filter 500 can be described with reference to FIGS. 5 and 4 as follows. An embodiment of the method of manufacturing the surface plasmonic color filter 500 may be combined with the embodiment of the manufacturing method of Fig. That is, another embodiment of the method of manufacturing the surface plasmonic color filter 500 includes forming a first dielectric layer 510 on the substrate 505, Forming a nano dot array pattern on the photosensitive layer by irradiating a laser interference pattern on the photosensitive layer and developing the nano dot array pattern through a developing process to form the photosensitive layer, A first dielectric layer 510 (on the first dielectric layer 510), and a metal layer 515 formed on the photosensitive layer of the nano dot array Removing a metal layer 515 formed on the photosensitive layer of the nano dot array and the metal layer 515 having a nano hole array corresponding to the nano dot array, ), Forming a nano hole array Forming a second dielectric layer 520 on the formed metal film 515 including the same dielectric material as the dielectric material included in the first dielectric layer 510 and forming a photonic crystal structure 525 on the second dielectric layer 520 To form a second layer. The blocking wavelength band of the photonic crystal structure 525 and the transmitting wavelength band of the nanohole array of the metal film 515 may be different from each other.

6 is a view (vertical cross-sectional view) illustrating a surface plasmonic color filter 600 coupled with a photonic crystal structure according to another embodiment of the present invention.

6, a surface plasmonic color filter (or a surface plasmonic color filter including a photonic crystal structure) coupled with a photonic crystal structure includes a photonic crystal structure 605, a substrate 610, a first dielectric layer 615, a metal film 620, and a second dielectric layer 625. The substrate 610, the first dielectric layer 615, the metal film 620, and the second dielectric layer 625 may be stacked in this order on the photonic crystal structure 605. The surface plasmonic color filter 600 may be, for example, a filter corresponding to one pixel (or sub-pixel) included in a TFT array substrate of a liquid crystal display (LCD).

Except for the arrangement relationship (formation order) of the photonic crystal structure 605, the substrate 610, the first dielectric layer 615, the metal film 620, and the second dielectric layer 625, the photonic crystal structure 605, The description of the constitution (including the constituent materials) and the function (function) of the first dielectric layer 610, the first dielectric layer 615, the metal film 620 and the second dielectric layer 625 is the same as that of the photonic crystal structure 110 of FIG. And the like of the substrate 105, the first dielectric layer 115, the metal film 120, and the second dielectric layer 125, it is possible to use a photonic crystal, which is a component of the surface plasmonic color filter 600, Structure 605 and the like can be referred to for a description of the structure and operation of the photonic crystal structure 110, etc. of the surface plasmonic color filter 100 shown in Fig.

An embodiment of a method of manufacturing the surface plasmonic color filter 600 can be described with reference to FIGS. 6 and 3 as follows. An embodiment of the method of manufacturing the surface plasmonic color filter 600 may be combined with the embodiment of the manufacturing method of Fig. That is, the embodiment of the method of manufacturing the surface plasmonic color filter 600 includes the steps of forming a photonic crystal structure under the substrate 605, forming a first dielectric layer 615 on the substrate 610, Forming a metal film 620 on the first dielectric layer 615 and a photosensitive layer similar to the photosensitive layer 315 of FIG. 3 on the metal film 620; Forming a nano hole array having a periodicity in the photosensitive layer by developing the nanohole array pattern formed on the photosensitive layer through a development process by the irradiation, Etching a metal film 620 using a nanohole array to form a nanohole array on the metal film 620 and forming a photosensitive layer having the nanohole array on the metal film 620 ) And the nano-hole array was removed And forming a second dielectric layer 625 on the formed metal film 620 that includes the same dielectric material as the dielectric material included in the first dielectric layer 615. [ The blocking wavelength band of the photonic crystal structure 605 and the transmission wavelength band of the nanohole array of the metal film 620 may be different from each other.

Another embodiment of the method of manufacturing the surface plasmonic color filter 600 can be described with reference to FIGS. 6 and 4 as follows. An embodiment of the method of manufacturing the surface plasmonic color filter 600 may be combined with the embodiment of the manufacturing method of Fig. That is, another embodiment of the method of manufacturing the surface plasmonic color filter 600 includes forming a photonic crystal structure 605 below the substrate 610 and forming a first dielectric layer 615 on the substrate 610 Forming a photosensitive layer similar to the photosensitive layer 410 of FIG. 4 on the first dielectric layer 615; irradiating the photosensitive layer with laser interference fringes and irradiating the photosensitive layer with a laser beam, Developing the array pattern through a developing process to form the photosensitive layer into a periodic nano dot array; forming a first dielectric layer 615 (on the first dielectric layer 615) , Forming a metal film (620) on the photosensitive layer of the nano dot array, removing the metal layer (620) formed on the photosensitive layer of the nano dot array and the photosensitive layer of the nano dot array, A nano hole array corresponding to the < RTI ID = 0.0 > Forming a second dielectric layer 625 including a dielectric material identical to the dielectric material included in the first dielectric layer 615 on the metal film 620 on which the nanohole array is formed; Step < / RTI > The blocking wavelength band of the photonic crystal structure 605 and the transmission wavelength band of the nanohole array of the metal film 620 may be different from each other.

As described above, the embodiments have been disclosed in the drawings and specification. Although specific terms are used herein, they are used for the purpose of describing the present invention only and are not used to limit the scope of the present invention described in the claims or the claims. It is therefore to be understood by those skilled in the art that various modifications and equivalent embodiments may be made without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

110: photonic crystal structure
115: first dielectric layer
120: metal film
125: second dielectric layer
305: Photonic crystal structure
310: metal film
315: Photosensitive layer
320: second dielectric layer
405: photonic crystal structure
410: Photosensitive layer
415: metal film
420: second dielectric layer
510: first dielectric layer
515: metal film
520: second dielectric layer
525: photonic crystal structure
605: photonic crystal structure
615: first dielectric layer
620: metal film
625: second dielectric layer

Claims (9)

A method of manufacturing a surface plasmonic color filter,
(a) forming a photonic crystal structure on a substrate;
(b) forming a first dielectric layer on the photonic crystal structure;
(c) forming a metal film on the first dielectric layer;
(d) forming a photosensitive layer on the metal film;
(e) forming a nano hole array having a periodicity in the photosensitive layer by irradiating the photosensitive layer with a laser interference pattern;
(f) etching the metal film using the nano-hole array of the photosensitive layer to form a nano-hole array in the metal film; And
(g) removing the photosensitive layer having the nanohole array from the metal film on which the nanohole array is formed, and forming a second layer on the metal film on which the nanohole array is formed, the second layer including the same dielectric material as the dielectric material contained in the first dielectric layer, And forming a dielectric layer,
The blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array are different from each other,
Wherein the photonic crystal structure includes a photonic band gap to block the passage of light of a wavelength corresponding to the photonic band gap. The method according to claim 1,
The photonic crystal structure in the step (a) is a one-dimensional photonic crystal structure, and the one-dimensional photonic crystal structure is formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), sputtering, spin coating, Wherein the dielectric material is formed by alternately repeating a plurality of times the two dielectric materials having different dielectric constants through an evaporator method or an evaporator method. The method according to claim 1,
Wherein the photonic crystal structure of step (a) is a two-dimensional photonic crystal structure or a three-dimensional photonic crystal structure, and the two-dimensional photonic crystal structure or the three-dimensional photonic crystal structure is formed by laser interference lithography. A method of manufacturing a surface plasmonic color filter,
(a) forming a photonic crystal structure on a substrate;
(b) forming a first dielectric layer on the photonic crystal structure;
(c) forming a photosensitive layer on the first dielectric layer;
(d) irradiating the photosensitive layer with a laser interferogram to form the photosensitive layer into a periodic nano dot array;
(e) forming a first dielectric layer and a metal layer on the photosensitive layer of the nano dot array;
(f) removing the metal layer formed on the photosensitive layer of the nano dot array and the photosensitive layer of the nano dot array to form a metal film on which a nano hole array corresponding to the nano dot array is formed; And
(g) forming a second dielectric layer on the metal film on which the nanohole array is formed, the second dielectric layer including the same dielectric material as the dielectric material included in the first dielectric layer,
The blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array are different from each other,
Wherein the photonic crystal structure includes a photonic band gap to block the passage of light of a wavelength corresponding to the photonic band gap. 5. The method of claim 4,
Wherein the metal film of the step (e) is formed by an electron beam evaporation method or a thermal evaporation method. A method of manufacturing a surface plasmonic color filter,
(a) forming a first dielectric layer on a substrate;
(b) forming a metal film on the first dielectric layer;
(c) forming a photosensitive layer on the metal film;
(d) forming a nano hole array having a periodicity in the photosensitive layer by irradiating the photosensitive layer with a laser interference fringe;
(e) etching the metal film using a nano-hole array of the photosensitive layer to form a nano-hole array in the metal film;
(f) removing the photosensitive layer having the nanohole array from the metal film on which the nanohole array is formed, and forming a second layer on the metal film on which the nanohole array is formed, the second layer including the same dielectric material as the dielectric material contained in the first dielectric layer, Forming a dielectric layer; And
(g) forming a photonic crystal structure on the second dielectric layer,
The blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array are different from each other,
Wherein the photonic crystal structure includes a photonic band gap to block the passage of light of a wavelength corresponding to the photonic band gap. A method of manufacturing a surface plasmonic color filter,
(a) forming a first dielectric layer on a substrate;
(b) forming a photosensitive layer on the first dielectric layer;
(c) irradiating the photosensitive layer with a laser interferogram to form the photosensitive layer into a periodic nano dot array;
(d) forming a metal film on the first dielectric layer and the photosensitive layer of the nano dot array;
(e) removing a metal layer formed on the photosensitive layer of the nano dot array and the photosensitive layer of the nano dot array to form a metal film on which a nano hole array corresponding to the nano dot array is formed;
(f) forming a second dielectric layer on the metal film on which the nanohole array is formed, the second dielectric layer including the same dielectric material as the dielectric material included in the first dielectric layer; And
(g) forming a photonic crystal structure on the second dielectric layer,
The blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array are different from each other,
Wherein the photonic crystal structure includes a photonic band gap to block the passage of light of a wavelength corresponding to the photonic band gap. A method of manufacturing a surface plasmonic color filter,
(a) forming a photonic crystal structure under the substrate;
(b) forming a first dielectric layer on the substrate;
(c) forming a metal film on the first dielectric layer;
(d) forming a photosensitive layer on the metal film;
(e) forming a nano hole array having a periodicity in the photosensitive layer by irradiating the photosensitive layer with a laser interference pattern;
(f) etching the metal film using the nano-hole array of the photosensitive layer to form a nano-hole array in the metal film; And
(g) removing the photosensitive layer having the nanohole array from the metal film on which the nanohole array is formed, and forming a second layer on the metal film on which the nanohole array is formed, the second layer including the same dielectric material as the dielectric material contained in the first dielectric layer, And forming a dielectric layer,
The blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array are different from each other,
Wherein the photonic crystal structure includes a photonic band gap to block the passage of light of a wavelength corresponding to the photonic band gap. A method of manufacturing a surface plasmonic color filter,
(a) forming a photonic crystal structure under the substrate;
(b) forming a first dielectric layer on the substrate;
(c) forming a photosensitive layer on the first dielectric layer;
(d) irradiating the photosensitive layer with a laser interferogram to form the photosensitive layer into a periodic nano dot array;
(e) forming a first dielectric layer and a metal layer on the photosensitive layer of the nano dot array;
(f) removing the metal layer formed on the photosensitive layer of the nano dot array and the photosensitive layer of the nano dot array to form a metal film on which a nano hole array corresponding to the nano dot array is formed; And
(g) forming a second dielectric layer on the metal film on which the nanohole array is formed, the second dielectric layer including the same dielectric material as the dielectric material included in the first dielectric layer,
The blocking wavelength band of the photonic crystal structure and the transmission wavelength band of the nanohole array are different from each other,
Wherein the photonic crystal structure includes a photonic band gap to block the passage of light of a wavelength corresponding to the photonic band gap.

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