KR101447779B1 - Ion beam source and deposition apparatus having the ion beam source - Google Patents

Abstract

The ion beam source includes a body having a discharge space on an upper surface thereof and having the gas supply holes for supplying a gas to the discharge space therein, and a discharge unit arranged to expose the discharge space on an upper surface of the body, and a cathode that is spaced apart from the cathode in the discharge space and forms an electric field between the cathode and the anode in association with a driving power applied from the outside to ionize the gas. The ion beam source can minimize the arcing caused by the material deposited on the electrode.

Description

[0001] The present invention relates to an ion beam source and a deposition apparatus having the same,

Field of the Invention [0002] The present invention relates to an ion beam source and a deposition apparatus having the ion beam source, and more particularly to an ion beam source used in a deposition process for depositing an object and a deposition apparatus having the same.

Generally, a DC or AC voltage is applied to an anode and a cathode arranged at a certain distance from an ion beam source, and a gas is injected into the spaced apart space to generate a plasma. More specifically, an electric field is formed by the voltages applied to the positive and negative electrodes, and free electrons in the spaces between the positive and negative electrodes are accelerated to excite and ionize the gas by inelastic collision between the electrons and the neutral gas.

The ion beam source is used for various surface treatment processes such as surface pretreatment, etching, and deposition through discharge of inert gas and reactive gas. Particularly, the deposition process using the reactive gas discharge of the ion beam source has been used in various surface treatment industries. However, the deposition materials generated during the deposition process are deposited not only on the surface to be treated but also on the electrode surface of the ion beam source. When the deposition material is an insulator or a dielectric material, fine arcing occurs in the deposition material and the electrode as the charge is accumulated in the deposition material. The fine arcing causes the discharge of the ion beam source to become unstable, and it has disadvantages of generating fine particles and increasing the roughness of the film formed on the object to be surface-treated.

The present invention provides an ion beam source capable of preventing arcing by substances deposited on the electrode surface.

The present invention provides a deposition apparatus including the ion beam source.

An ion beam source according to the present invention includes a body having a discharge space on an upper surface thereof and having the gas supply holes for supplying gas into the discharge space therein, And a cathode for separating the cathode from the cathode in the discharge space and forming an electric field between the cathode and the cathode in association with driving power applied from the outside to ionize the gas can do.

According to one embodiment of the present invention, the ion beam source is fixed to the body to support the anode, and a step for preventing coating of a conductive material in order to prevent the body and the anode from being electrically connected to each other. And a support member having a support surface.

According to one embodiment of the present invention, the cathode may have a coupling groove on the lower surface for aligning with the body, the coupling groove corresponding to the upper surface of the body.

According to an embodiment of the present invention, the ion beam source is further provided inside the body, and may further include a magnetic body for focusing the gas ions excited by the cathode and the anode.

According to an embodiment of the present invention, the ion beam source includes a housing which forms an inner space which is coupled to a lower surface of the body and communicates with the gas supply holes, And a gas distribution plate disposed to cover the gas supply holes in the inner space of the housing and uniformly supplying the gas in the inner space to the gas supply holes .

According to one embodiment of the present invention, the gas supply pipe is provided to receive a first supply pipe having a plurality of first openings for supplying the gas and the first supply pipe, and the gas supplied from the first supply pipe And a second supply pipe having a plurality of second openings for feeding into the interior space of the housing.

A deposition apparatus according to the present invention includes a vacuum processing chamber for providing a space for performing a deposition process, a body having a discharge space on an upper surface thereof and having the gas supply holes for supplying gas into the discharge space, A cathode disposed to face the discharge space on the upper surface of the body and floating with no power applied thereto, and a cathode arranged to be spaced apart from the cathode in the discharge space and interposed between the cathode and the driving power source, An ion beam source disposed within the process chamber to be electrically insulated from the process chamber, and an ion beam source disposed within the process chamber to face the ion beam source, Plays supporting an object such that deposition is carried out by the ionized gas of the beam source It may contain.

Since the ion beam source and the deposition apparatus according to the present invention are electrically insulated from the ion beam source and the process chamber and are maintained in the floating potential state, occurrence of arcing due to the substance deposited on the electrode of the ion beam source can be minimized. In addition, the quality of the deposited film can be improved by minimizing the fine particles generated by the arcing, and the discharge stability of the ion beam source can be improved.

1 is a perspective view illustrating an ion beam source according to an embodiment of the present invention.
2 is an exploded perspective view for explaining the ion beam source shown in FIG.
3 is a cross-sectional view for explaining the ion beam source shown in Fig.
4 is a cross-sectional view for explaining gas supply of the ion beam source shown in Fig.
5 is a cross-sectional view illustrating a deposition apparatus according to an embodiment of the present invention.
6 is a graph of a loaded voltage and current signal in a conventional ion beam source and a surface micrograph of a deposited specimen.
Figure 7 is a graph of the loading voltage and current signal in the ion beam source of the present invention and a surface micrograph of the deposited specimen.
8 is a graph for comparing the hardness of a film deposited using the ion beam source of the present invention and a conventional ion beam source.
9 is a graph for comparing friction coefficients of a film deposited using the ion beam source of the present invention and a conventional ion beam source.

Hereinafter, an ion beam source and a deposition apparatus having the ion beam source according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention in order to clarify the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

1 is a perspective view for explaining an ion beam source according to an embodiment of the present invention, FIG. 2 is an exploded perspective view for explaining the ion beam source shown in FIG. 1, and FIG. 3 is a cross- 4 is a cross-sectional view for explaining the gas supply of the ion beam source shown in Fig. 1. Fig.

1 through 4, an ion beam source 100 for performing a deposition process using a gas discharge includes a body 110, a cathode 120, an anode 130, a support member 140, A magnetic body 150, a housing 160, a gas supply pipe 170, and a gas distribution plate 180.

The body 110 has a substantially rectangular parallelepiped shape and has a discharge space 112 on its upper surface. The body 110 is made of a metal material. The discharge space 112 extends along the extending direction of the body 110. For example, the discharge space 112 may have a ring shape extending along the extending direction of the body 110.

The body 110 has a gas supply hole 114. The gas supply hole 114 is provided through the body 110 from the lower surface of the body 110 and supplies the gas to the discharge space 112 of the body 110. The gas supply holes 114 are arranged so that a plurality of gas supply holes 114 are spaced apart from each other by a predetermined distance along the extending direction of the body 110. Therefore, the gas can be uniformly supplied to the discharge space 112 through the gas supply holes 114.

The gas may form an insulating film through the deposition process. The gas may comprise at least one of carbon and nitrogen. Accordingly, the insulating film may be a carbon film, a nitrogen film, or a carbon nitride film. In order to form the carbon film, a gas containing a CH group such as acetylene, benzene, or methane is used.

The body 110 has an insertion groove 116 formed at the center of the lower surface along the extending direction of the body 110. The insertion groove 116 can receive the gas distribution plate 180 described later. Although not shown, when the body 110 does not have the insertion groove 116 and the gas distribution plate 180 is in close contact with the lower surface of the body 110, A connecting groove (not shown) may be formed. The width of the connection groove is preferably smaller than the width of the gas distribution plate 180. Since the gas passing through the gas distribution plate 180 is diffused in the connection groove, the gas can be supplied to the gas supply holes 114 more uniformly.

The cathode 120 is provided to expose the discharge space 112 on the upper surface of the body 110. The cathode 120 includes a first cathode 122 and a second cathode 124.

The first cathode 122 is provided along a top edge of the body 110. For example, the first cathode 122 has a ring shape.

The second cathode 124 is provided at the center of the upper surface of the body 110. For example, the second cathode 124 has a bar shape.

The first cathode 122 and the second cathode 124 are spaced apart from each other by a predetermined distance. The discharge space 112 is exposed through the opening 126 between the first cathode 122 and the second cathode 124. At this time, the opening 126 has a ring shape extending in the one direction.

A first fastening groove 122a and a second fastening groove 124a are formed on the bottom surfaces of the first cathode 122 and the second cathode 124 for coupling with the body 110. The first fastening groove 122a and the second fastening groove 124a may each have a shape in which one groove is extended. Specifically, the first fastening groove 122a has a ring shape, and the second fastening groove 124a has a bar shape.

As another example, the first fastening groove 122a and the second fastening groove 124a may each have a plurality of grooves arranged at regular intervals. Specifically, the first fastening groove 122a has a plurality of grooves arranged in a ring shape, and the second fastening groove 124a has a plurality of grooves arranged in a bar shape. In this case, the upper surface of the body 110 also has a shape corresponding to that of the first fastening groove 122a and the second fastening groove 124a.

The first fastening groove 122a and the second fastening groove 124a receive the upper surface of the body 110. The tolerance of the first fastening groove 122a and the second fastening groove 124a is preferably about 0.3 mm or less. The first negative electrode 122 and the second negative electrode 124 can be precisely positioned on the upper surface of the body 110 by using the first engagement groove 122a and the second engagement groove 124a. The first fastening groove 122a and the second fastening groove 124a may receive the upper surface of the body 110 so that the length of the first cathode 122 and the second cathode 124 is longer than about 2000 mm, Can be accurately positioned on the body 110.

When the magnetic substance 150 is embedded in the body 110, the first negative electrode 122 and the second negative electrode 124 made of metal are precisely positioned on the upper surface of the body 110 due to the magnetic force of the magnetic body 150 It is difficult to make. However, if the first and second coupling grooves 122a and 124a are used, the first and second cathodes 122 and 124 may be connected to the body 110 even if the magnetic body 150 is embedded in the body 110. However, As shown in FIG.

The distance between the first cathode 122 and the second cathode 124 can be kept constant since the first cathode 122 and the second cathode 124 can be accurately positioned on the upper surface of the body 110. Also, the interval between the cathode 120 and the anode can be kept constant.

On the other hand, the cathode 120 is not connected to a power source from the outside, and maintains a floating state which is not grounded. Since the body 110 is coupled to the cathode 120, the body 110 also acts as the cathode 120. Accordingly, the body 110 connected to the cathode 120 maintains a floating state with the body 110.

The anode 130 is provided inside the discharge space 112. The anode 130 is disposed so as to be spaced apart from the cathode 120. Also, the anode 130 is disposed so as to be separated from the body 110 as well. The anode 130 has a ring shape extending in the same direction as the extending direction of the body 110. Further, the anode 130 has a fastening groove 132 for fastening with the support member 140.

The anode 130 is connected to an external power source. Accordingly, the anode 130 generates an electric field between the cathode 120 and the anode 130 in conjunction with the driving power applied from the outside. The gas supplied through the gas supply hole 114 is ionized by the electric field.

Since the cathode 120 is in a floating state, the cathode 120 and the anode 130 maintain the site potential state even if driving power is applied to the anode 130. [ Therefore, even if charges are accumulated on the surface of the ion beam source 100, for example, on the surface of the body 110, the cathode 120, and the anode 130 by the ionized gas attached to the deposition material The potential difference between the ion beam source 100 and the evaporation material is not large, and arcing can be reduced.

The support member 140 is fixed to the body 110 and supports the anode 130 so that the anode 130 is separated from the cathode 120 and the body 110. For example, one end of the support member 140 that supports the anode 130 is inserted into the engagement groove 132 of the anode 130 to fix the anode 130. The support member 140 is made of an insulating material. Examples of the insulating material include ceramics, PEEK (Poly-Ether Ether Ketone), and the like.

If the support member 140 has a simple columnar shape, the conductive member generated inside or generated from the outside during the ion beam generation may be coated on the entire surface of the support member 140 even if the support member 140 is made of an insulating material . Therefore, the body 110 and the anode 130 can be electrically connected by the conductive material.

Therefore, the support member 140 has a structure that can prevent the conductive material from being coated on the entire surface. For example, the support member 140 may have a step. The step may have various shapes.

 The support member 140 may have a step in the form of a cover 142 that extends around the periphery of the support member 140 and surrounds the support member 140 in a spaced apart relationship. As shown in FIG. 3, the cover 142 may be located at the one end of the support member 140 that supports the anode 130. The cover 142 may be located at the center of the support member 140 or at the other end of the support member 140 opposite to the one end.

The cover 142 is spaced apart from the support member 140 and surrounds the support member 140 so that the conductive material is hardly coated on the support member 140 surrounded by the cover 142. Therefore, the body 110 and the anode 130 can be prevented from being electrically connected by the conductive material.

Although not shown, the support member 140 is formed along the periphery of the support member 140 and has a stepped portion in the form of a latching protrusion with an increased cross-sectional area, a stepped portion formed along the periphery of the support member 140, Shaped steps formed along the periphery of the support member 140, and the like. A plurality of grooves may be formed throughout the support member 140.

Since the stepped surfaces abruptly change the surface profile of the supporting member 140, it is difficult for the conductive material to be coated on the stepped portion of the supporting member 140. Therefore, the body 110 and the anode 130 can be prevented from being electrically connected by the conductive material.

The body 110 has a groove 116 along the periphery of the portion where the support member 140 is fixed. The portion of the support member 140 exposed by the groove 116 can be covered by the body 110 so that the conductive material is applied to the entire surface of the support member 140 exposed by the groove 116 It can be prevented from being coated. Therefore, it is possible to effectively prevent the body 110 and the anode 130 from being electrically connected by the conductive material.

The magnetic body 150 is provided along the extending direction of the body 110 inside the body 110 located at the bottom of the discharge space 112. The magnetic body 150 may be bonded with a plurality of permanent magnets along the extending direction. As another example, the magnetic body 150 may be one permanent magnet extending along the extending direction.

When a magnetic field is applied to the electrons and the ion beams in the plasma state, the direction of movement of the electrons and the ion beams is circular motion at a right angle to the magnetic direction, so that the plasma can be partially formed by the restraint of electrons, You can concentrate where you want. Accordingly, it is possible to concentrate the density of the plasma to a desired position by forming a magnetic field so that particles of the gas supplied to the discharge space of the body 110 through the magnetic body 150 can be effectively discharged by closed drift Thereby preventing the plasma from occurring in the unintended region.

The housing 160 is provided on the lower surface of the body 110. Specifically, the housing 160 is coupled to the lower surface of the body 110 and forms an inner space communicating with the gas supply holes 114 of the body 110.

The gas supply pipe 170 extends from the outside of the housing 160 to the inside of the housing 160 through the housing 160. The gas supply pipe 170 supplies the gas to the inside of the housing 160.

The gas supply pipe 170 has a double pipe structure to uniformly supply the gas into the inside of the housing 160. Specifically, the gas supply pipe 170 includes a first supply pipe 172 and a second supply pipe 174.

The first supply pipe 172 has the first openings 172a for supplying the gas. The first openings 172a are disposed along the first supply pipe 172, and the intervals of the first openings 172a may be uniform or non-uniform. The second supply pipe 174 receives the first supply pipe 172. The second supply pipe 174 has second openings 174a for supplying the gas. The second openings 174a are disposed along the second supply pipe 174, and the intervals of the second openings 174a may be uniform or non-uniform. The first supply pipe 172 supplies an external gas to the second supply pipe 174 and the second supply pipe 174 supplies the gas to the inside of the housing 160.

The gas supply pipe 170 has a double pipe structure as described above and can uniformly supply an external gas to the inside of the housing 160.

The first openings 172a and the second openings 174a may be provided so as to face each other. For example, the first openings 172a may be provided to face upward, and the second openings 174a may face downward. Further, the first openings 172a and the second openings 174a may be arranged to be offset from each other. For example, the second openings 174a may be located between the first openings 172a.

Since the gas supply pipe 170 is provided so that the first openings 172a and the second openings 174a are staggered in opposite directions to each other, the flow path of the gas introduced from the outside increases and the residence time required for the gas mixture increases . Accordingly, the gas supply pipe 170 can supply the external gas to the inside of the housing 160 more uniformly.

The gas distribution plate 180 is disposed in the inner space of the housing 160 to cover the gas supply holes 114. Since the gas supply holes 114 are spaced apart from each other along the extending direction of the body 110, the gas distribution plate 180 is formed in the extending direction of the body 110 so as to cover the gas supply holes 114 As shown in Fig. For example, the gas distribution plate 180 may be inserted into a groove formed in the lower surface of the body 110. As another example, the gas distribution plate 180 may be in close contact with the lower surface of the body 110. At this time, a connection groove connecting the gas supply holes 114 may be formed on the lower surface of the body 110 to which the gas distribution plate 180 is attached.

The gas distribution plate 180 is made of a porous metal material. For example, the gas distribution plate 180 may be formed by sintering a metal powder. The holes formed in the gas distribution plate 180 may have a size in micro or nanometer units.

Since the ion beam source operates at a vacuum of several tens of mTorr or less, the pressure inside the housing 160 is higher than the internal pressure of the gas supply holes 114. Therefore, the gas inside the housing 160 is diffused in the hole formed in the gas distribution plate 180. Therefore, the gas inside the housing 160 can be uniformly supplied to the gas supply holes 114 through the gas distribution plate 180.

Since the ion beam source 100 can accurately position the cathode 120 on the body 110, the ion beam can be stably and uniformly generated. In addition, the ion beam source 100 prevents the conductive material from being coated on the entire surface of the support member 140, thereby preventing the body 110 and the anode 130 from being electrically connected. The ion beam source 100 uniformly supplies the gas to the discharge space 112 through the gas supply holes 114 by using the gas supply pipe 170 and the gas distribution plate 180 having a double pipe structure , The ion beam can be uniformly generated.

5 is a cross-sectional view illustrating a deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 5, a deposition apparatus 1000 includes an ion beam source 100, a process chamber 200, and a plate 300.

The process chamber 200 provides a space for the deposition process to be performed. The process chamber 200 may be maintained in a vacuum state. For example, the process chamber 200 is connected to a vacuum pump (not shown), and the process chamber 200 can be maintained in a vacuum state by the vacuum pump. The process chamber 200 may be grounded.

The ion beam source 100 is provided inside the process chamber 200. A detailed description of the ion beam source 100 is substantially the same as that described with reference to Figs. 1 to 4, and therefore will not be described.

The ion beam source 100 is electrically isolated from the process chamber 200. Although not shown, an insulating member may be disposed between the ion beam source 100 and the process chamber 200 when the ion beam source 100 is fixed to the process chamber 200.

Also, an external power source connected to the anode of the ion beam source 100 is not electrically connected to the process chamber 200.

The cathode and the anode of the ion beam source 100 are not electrically connected to the process chamber 200, which is electrically grounded, and thus remain in the floating potential state.

The plate 300 is positioned to face the ion beam source 100 within the process chamber 200. The plate 300 supports the object 10 such that deposition is effected by the ionized gas provided from the ion beam source 200.

The plate 300 may rotate the object 10 so that the film is evenly formed on the object 10.

The deposition apparatus 1000 can minimize arcing of the ion beam source 100 because the ion beam source 100 and the process chamber 200 are electrically insulated and remain in a floating potential state. Therefore, the deposition apparatus 1000 can minimize the fine particles generated by the arcing and improve the quality of the deposited film.

6 is a graph of a loaded voltage and current signal in a conventional ion beam source and a surface micrograph of a deposited specimen.

Figure 6 shows the discharge voltage and current signal of the acetylene discharge at a discharge voltage of 1 kV and a vacuum degree of 1 ㅁ 0.5 mTorr in a conventional ion beam source electrically connected to the process chamber, and the surface of the deposited sample was photographed by a microscope. At this time, the discharge voltage was kept relatively constant, but the discharge current was not maintained constant, and many peaks were generated, and microarching was continuously observed. In addition, it can be seen that fine particles having a size of several to several tens of micrometers exist on the surface of the film deposited due to the microarching.

Figure 7 is a graph of the loading voltage and current signal in the ion beam source of the present invention and a surface micrograph of the deposited specimen.

FIG. 7 shows the discharge voltage and current signal of the acetylene discharge at a discharge voltage of 1 kV and a vacuum degree of 1 ㅁ 0.5 mTorr in the ion beam source of the present invention electrically connected to the process chamber, and the surface of the deposited sample was photographed by a microscope. Compared with FIG. 6, it can be seen that not only the discharge voltage but also the discharge current signal are kept constant. This means that the occurrence of micro arcing is suppressed, which means that there is almost no fine particles of several to several tens of micrometers in size on the surface of the deposited film.

In order to apply the carbon film formed by the method of the present invention to various fields which have been used by conventional processes, the properties should be similar to those of the carbon film formed in the conventional process. Therefore, Raman spectroscopy, nanoindentation and pin-on-disk experiments were performed to analyze the mechanical and chemical characteristics of the carbon film formed by the present invention.

D Position G Position Voltage [kV] I (D) / I (G) Time
[min] Peak
[cm-1] Amplitude FWHM Peak
[cm-1] Amplitude FWHM Grounding 1 (DC) 0.39 30 1370 143 300 1541 360 190 Floating 1 (DC) 0.50 30 1340 151 373 1535 299 199

Table 1 shows Raman spectroscopy analysis results of the carbon film formed using the conventional ion beam source and the ion beam source of the present invention. In general, when the binding characteristics of carbon films are analyzed by Raman sepctroscopy method, sp2 and sp3 binding behavior of carbon films is deduced through changes of I (D) / I (G) and G peak positions. The Raman spectroscopy results of the carbon film formed using the ion beam source of the present invention and the carbon film formed using the conventional ion beam source showed that the I (D) / I (G) value was about 0.11 and the G peak position was about 6 cm ^-1 . This indicates that the range of change means that the properties of the carbon film do not change greatly.

FIG. 8 is a graph for comparing the hardness of a film deposited using the ion beam source of the present invention and a conventional ion beam source, and FIG. 9 is a graph for comparing the hardness of the film deposited using the ion beam source of the present invention and a conventional ion beam source A graph for comparing friction coefficients.

FIG. 8 is a result of measuring the microhardness value of the carbon film using the nanoindentation measurement. The microhardness of the carbon film showed a variation within an error range of about 48 ㅁ 2 GPa. FIG. 9 shows the friction coefficient measured by the pin-on-disk friction evaluation. The frictional force of the carbon film was about 0.2, and the frictional behavior of the film deposited under each condition was almost similar.

Therefore, the carbon film deposited using the ion beam source of the present invention can realize physical properties similar to those of a carbon film deposited using a conventional ion source, and also can improve discharge stability and suppress fine particle generation through prevention of fine arcing Able to know.

As described above, the ion beam source and the deposition apparatus according to the present invention minimize the occurrence of micro arcing and generate a uniform ion beam, so that the discharge stability of the ion beam source is improved and the quality of the film formed by the deposition process is improved Can be improved.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.

100: ion beam source 110: body
120: cathode 130: anode
140: support member 150: magnetic substance
160: housing 170: gas supply pipe
180: gas distribution plate

Claims (7)

A body having a discharge space on an upper surface thereof and having the gas supply holes for supplying gas into the discharge space therein;
A cathode which is provided on the upper surface of the body to expose the discharge space and is floating without applying power; And
And a cathode disposed in the discharge space so as to be spaced apart from the cathode and forming an electric field between the cathode and the cathode in association with driving power applied from the outside to ionize the gas,
A housing coupled to a lower surface of the body to form an inner space communicating with the gas supply holes;
A gas supply pipe penetrating the housing from the outside of the housing to supply gas into the inner space of the housing; And
Further comprising a gas distribution plate disposed to cover the gas supply holes in the inner space of the housing and uniformly supplying the gas in the inner space into the gas supply holes. [2] The apparatus of claim 1, further comprising a support member fixed to the body to support the anode and having a step for preventing a coating of a conductive material to prevent the body and the anode from being electrically connected to each other Features an ion beam source. The ion beam source according to claim 1, wherein the cathode has a coupling groove on a lower surface of the body corresponding to an upper surface of the body for alignment with the body. The ion beam source according to claim 1, further comprising a magnetic body provided inside the body for focusing the gas ions excited by the cathode and the anode. delete The gas supply device according to claim 1,
A first supply pipe having a plurality of first openings for supplying the gas; And
And a second supply tube provided to receive the first supply tube and having a plurality of second openings for supplying gas supplied from the first supply tube to the inner space of the housing. A vacuum process chamber providing a space for the deposition process to be performed;
A plasma display panel comprising: a body having a discharge space on an upper surface thereof and having the gas supply holes for supplying a gas into the discharge space therein; a cathode electrode disposed on the upper surface of the body to discharge the discharge space, An anode for separating the cathode from the discharge space and forming an electric field between the anode and the cathode in association with driving power applied from the outside to ionize the gas; A gas supply pipe which penetrates the housing from the outside of the housing to supply gas to the inner space of the housing and a gas supply pipe which covers the gas supply holes in the inner space of the housing, For supplying gas in the inner space uniformly to the gas supply holes An ion beam source including a gas distribution plate, the ion beam source being disposed in the process chamber to be electrically insulated from the process chamber; And
And a plate disposed within the process chamber so as to face the ion beam source and supporting the object such that deposition is performed by the ionized gas of the ion beam source.

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