JP2008127610A - Ion beam source, and film deposition system provided therewith - Google Patents
Ion beam source, and film deposition system provided therewith Download PDFInfo
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本発明は、イオンビーム源及びこれを備えた成膜装置に関するものである。 The present invention relates to an ion beam source and a film forming apparatus including the ion beam source.
基板上に金属薄膜を形成し、これを酸素プラズマで処理することを繰り返して金属酸化膜を形成する装置は、高品位な光学薄膜を形成することができるため実用化されている。このような装置において、酸化アシスト等のためにイオンビーム源は使用されており、その一例として例えば特許文献１に開示がなされている。
このようなイオンビーム源を用いて、基板上に形成された金属酸化物にイオンビームを照射すると、図４に示すように、基板（図示せず）上の誘電材料３１がエッジングされ、カソード３２の表面に着膜する。
しかしながら、イオンビーム源３０のカソード３２の表面は、真空チャンバー１と導通されて接地電位であるため、カソード３２の表面に着膜した誘電材料３１に蓄積した電荷３４とカソード３２との間の電位差が生じ、局所的にアーク放電（異常放電）が起こり、パーティクルやスプラッシュにより基板を汚染するという問題があった。
An apparatus for forming a metal oxide film by repeatedly forming a metal thin film on a substrate and treating it with oxygen plasma has been put to practical use because a high-quality optical thin film can be formed. In such an apparatus, an ion beam source is used for oxidation assistance or the like, and an example thereof is disclosed in Patent Document 1, for example.
When such an ion beam source is used to irradiate a metal oxide formed on the substrate with an ion beam, the dielectric material 31 on the substrate (not shown) is edged as shown in FIG. The film is deposited on the surface.
However, since the surface of the cathode 32 of the ion beam source 30 is electrically connected to the vacuum chamber 1 and is at the ground potential, the potential difference between the charge 34 accumulated in the dielectric material 31 deposited on the surface of the cathode 32 and the cathode 32. There is a problem that arc discharge (abnormal discharge) occurs locally and the substrate is contaminated by particles and splash.
そこで、本発明は、カソード近傍に発生する異常放電を防止してパーティクルやスプラッシュの発生を抑制するためのイオンビーム源及びこれを備えた成膜装置を提供することを目的とする。 Therefore, an object of the present invention is to provide an ion beam source for preventing abnormal discharge generated in the vicinity of a cathode and suppressing generation of particles and splash, and a film forming apparatus including the ion beam source.
上記課題を解決すべく、本発明者等は鋭意検討の結果、次の解決手段を見いだした。
即ち、本発明のイオンビーム源は、請求項１に記載の通り、金属製の筐体に、カソードと、磁気ギャップと、前記筐体内に磁場を生じさせる磁場発生手段と、前記筐体内に反応性ガスを導入するための反応性ガス導入手段と、前記磁気ギャップの近傍に配置されるアノードとを備えるイオンビーム源であって、前記カソードを接地電位から電気的に絶縁したことを特徴とする。
また、請求項２に記載の本発明は、請求項１に記載のイオンビーム源において、前記カソードには負電圧が印加されることを特徴とする。
また、請求項３に記載の本発明は、請求項２に記載のイオンビーム源において、前記カソード部に印加する負電圧は−１０Ｖから−１００Ｖであることを特徴とする。
また、請求項４に記載の本発明は、請求項２又は３に記載のイオンビーム源において、前記負電圧はパルス状に印加されることを特徴とする。
また、請求項５に記載の本発明は、請求項１乃至４の何れかに記載のイオンビーム源を真空チャンバー内に設け、前記イオンビーム源と前記真空チャンバーとを電気的に絶縁したことを特徴とする。
また、請求項６に記載の本発明は、請求項５に記載の成膜装置において、前記真空チャンバー内に、基板支持手段と、成膜手段と、酸化手段とを備えることを特徴とする。
In order to solve the above problems, the present inventors have found the following solution as a result of intensive studies.
That is, the ion beam source according to the present invention comprises a metal housing, a cathode, a magnetic gap, a magnetic field generating means for generating a magnetic field in the housing, and a reaction in the housing. An ion beam source comprising a reactive gas introduction means for introducing a reactive gas and an anode disposed in the vicinity of the magnetic gap, wherein the cathode is electrically insulated from a ground potential. .
According to a second aspect of the present invention, in the ion beam source according to the first aspect, a negative voltage is applied to the cathode.
According to a third aspect of the present invention, in the ion beam source according to the second aspect, a negative voltage applied to the cathode portion is -10V to -100V.
According to a fourth aspect of the present invention, in the ion beam source according to the second or third aspect, the negative voltage is applied in a pulse shape.
According to a fifth aspect of the present invention, the ion beam source according to any one of the first to fourth aspects is provided in a vacuum chamber, and the ion beam source and the vacuum chamber are electrically insulated. Features.
According to a sixth aspect of the present invention, in the film forming apparatus according to the fifth aspect, the vacuum chamber includes a substrate supporting means, a film forming means, and an oxidizing means.
本発明によれば、成膜の際に、アシスト源やエッチング源等として使用することができるイオンビーム源のカソード近傍における異常放電を防止することができ、この異常放電に起因するパーティクルやスプラッシュの発生を軽減することができる。 According to the present invention, it is possible to prevent abnormal discharge in the vicinity of the cathode of an ion beam source that can be used as an assist source, an etching source, or the like during film formation, and particles and splash caused by the abnormal discharge can be prevented. Occurrence can be reduced.
次に、図面を参照して本発明の一実施の形態について説明する。
図１は、成膜装置の概略構成図を示す。
真空チャンバー１の略中央部には、基板支持手段を備えた回転ドラム２が配置され、その回転方向に順に、第１成膜ゾーン３、第２成膜ゾーン４及び酸化ゾーン５が配置される。
スパッタリングを行う第１成膜ゾーン３は、電極（２台）からなるスパッタカソード６と、前記スパッタカソード６に隣接して配置されるＴａ、ＮｂやＴｉ等から構成されるターゲット７と、前記スパッタカソード６に交流電圧を印加するためのＡＣ電源８と、第１成膜ゾーン３においてＡｒガス等を導入するためのＡｒガス導入系９から構成される。同様にスパッタリングを行う第２成膜ゾーン４は、電極（２台）からなるスパッタカソード１０と、これに隣接して配置されるＳｉ等から構成されるターゲット１１と、前記スパッタカソード１０に交流電圧を印加するためのＡＣ電源１２と、第２成膜ゾーン４においてＡｒガス等を導入するためのガス導入系１３から構成される。また、酸化ゾーン５には、酸化プラズマ源１４が設置される。
アシスト源又はエッチング源として使用するイオンビーム源１５は、第１成膜ゾーン３と酸化ゾーン５の間に配置され、アースされた真空チャンバー１内に固定される。
イオンビーム源１５は、図２に示すように、軟鉄、ＳＵＳやアルミニウム等の金属により構成された中空の筐体１６内に、その内部に磁場を発生させるための磁場発生手段１７と、磁場発生手段１７を囲むようにして設けられたアノード１８を備える。また、筐体１６の下部（真空チャンバー１側）には、真空チャンバー１内にＯ２等の反応性ガスを導入するための反応性ガス導入手段１９が設けられる。筐体１６の上部（回転ドラム２側）には、磁気ギャップ２０が形成され、その両側の筐体１６の一部がカソード２１として構成されている。そして、筐体１６と真空チャンバー１との間には絶縁体２３が設けられる。
Next, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 shows a schematic configuration diagram of a film forming apparatus.
A rotating drum 2 provided with a substrate support means is disposed at a substantially central portion of the vacuum chamber 1, and a first film forming zone 3, a second film forming zone 4, and an oxidation zone 5 are sequentially disposed in the rotation direction. .
The first film formation zone 3 for performing sputtering includes a sputter cathode 6 composed of electrodes (two), a target 7 composed of Ta, Nb, Ti, etc. disposed adjacent to the sputter cathode 6, and the sputter. An AC power supply 8 for applying an AC voltage to the cathode 6 and an Ar gas introduction system 9 for introducing Ar gas or the like in the first film formation zone 3 are configured. Similarly, the second film formation zone 4 for performing sputtering includes a sputter cathode 10 composed of two electrodes, a target 11 composed of Si or the like disposed adjacent thereto, and an AC voltage applied to the sputter cathode 10. And an AC power source 12 for applying a gas, and a gas introduction system 13 for introducing Ar gas or the like in the second deposition zone 4. An oxidation plasma source 14 is installed in the oxidation zone 5.
An ion beam source 15 used as an assist source or an etching source is disposed between the first film formation zone 3 and the oxidation zone 5 and is fixed in a grounded vacuum chamber 1.
As shown in FIG. 2, the ion beam source 15 includes a magnetic field generating means 17 for generating a magnetic field in a hollow casing 16 made of a metal such as soft iron, SUS, or aluminum, and magnetic field generation. An anode 18 is provided so as to surround the means 17. In addition, a reactive gas introduction means 19 for introducing a reactive gas such as O 2 into the vacuum chamber 1 is provided in the lower part of the housing 16 (on the vacuum chamber 1 side). A magnetic gap 20 is formed on the upper portion of the housing 16 (on the rotating drum 2 side), and part of the housing 16 on both sides thereof is configured as a cathode 21. An insulator 23 is provided between the housing 16 and the vacuum chamber 1.
上記構成により、基板を保持した回転ドラム２を回転させ、第１及び第２成膜ゾーン３、４において金属膜を成膜し、その後、酸化ゾーン５を通過させることにより金属膜を酸化し、これらの工程を繰り返すことにより、所望の金属薄膜を基板上に形成する。これらの工程において、イオンビーム源１５は、アノード１８に、例えば、１５００Ｖ〜３０００Ｖ程度の電位を印加してプラズマを発生させてイオンビームを生成し、酸化ゾーン５における酸化のアシストをする。 With the above configuration, the rotating drum 2 holding the substrate is rotated to form a metal film in the first and second film formation zones 3 and 4, and then the metal film is oxidized by passing through the oxidation zone 5. By repeating these steps, a desired metal thin film is formed on the substrate. In these steps, the ion beam source 15 applies a potential of, for example, about 1500 V to 3000 V to the anode 18 to generate plasma to generate an ion beam, and assists oxidation in the oxidation zone 5.
上記のように、イオンビーム源１５を接地電位としないことにより、カソード２１表面に付着した膜に電荷が蓄積しても、局所的にアーク放電（異常放電）が生じることなく、パーティクルやスプラッシュの発生を抑えることができる。 As described above, since the ion beam source 15 is not set to the ground potential, even if charges are accumulated in the film attached to the surface of the cathode 21, no arc discharge (abnormal discharge) occurs locally, and particles and splashes are not generated. Occurrence can be suppressed.
また、カソード２１には、負電圧を印加することが好ましい。プラズマを発生させ、カソード２１表面に蓄積した電荷を補償することができるからである。尚、前記負電圧は、−１０Ｖから−１００Ｖとすることが好ましい。−１０Ｖ未満であるとプラズマが発生せず、１００Ｖを超えると異常放電が発生することがあるためである。 Further, it is preferable to apply a negative voltage to the cathode 21. This is because plasma can be generated to compensate for charges accumulated on the surface of the cathode 21. The negative voltage is preferably -10V to -100V. This is because plasma is not generated when the voltage is less than −10V, and abnormal discharge may occur when the voltage exceeds 100V.
また、負電圧は、正極に反転するパルスを重畳することが好ましい。負電圧のみを印加した場合にはイオンによる電荷の蓄積が発生する恐れがあるためである。尚、前記パルスの周波数は２５０ｋＨｚ以下とすることが好ましい。 Moreover, it is preferable that the negative voltage superimposes an inverted pulse on the positive electrode. This is because when only a negative voltage is applied, charge accumulation due to ions may occur. The pulse frequency is preferably 250 kHz or less.
また、上記説明した成膜装置は、少なくとも、基板支持手段と、成膜手段と、酸化手段とを備えていればよく、説明した回転ドラム２、スパッタカソード６、１０等に限定されるものではない。 Further, the film forming apparatus described above may be provided with at least the substrate support means, the film forming means, and the oxidation means, and is not limited to the rotating drum 2 and the sputter cathodes 6 and 10 described above. Absent.
次に、比較例とともに本実施例について説明する。 Next, this example will be described together with a comparative example.
（実施例１）
図１及び図２を使用して説明したように、真空チャンバー１とイオンビーム源１５との間に絶縁性材料のテフロン（登録商標）２３を設けて実施例１の成膜装置とした。
(Example 1)
As described with reference to FIGS. 1 and 2, a Teflon (registered trademark) 23 of an insulating material is provided between the vacuum chamber 1 and the ion beam source 15 to obtain the film forming apparatus of Example 1.
（比較例１）
上記実施例１の絶縁性材料を除き、イオンビーム源１５の筐体１６が接地電位となるようにして比較例１の成膜装置とした。
(Comparative Example 1)
Except for the insulating material of Example 1, the film forming apparatus of Comparative Example 1 was made such that the casing 16 of the ion beam source 15 was at ground potential.
上記実施例１及び比較例１の成膜装置を使用し、カソード２１に特に電圧を印可せず、真空チャンバー１内を常温で０．２Ｐａに減圧して１０分間成膜を行い、Ｓｉ（Ｐ型）製基板上に膜厚５００オングストロームのＳｉＯ２膜を形成した。 Using the film forming apparatus of Example 1 and Comparative Example 1 described above, no voltage was applied to the cathode 21 and the vacuum chamber 1 was decompressed to 0.2 Pa at room temperature to form a film for 10 minutes. A SiO 2 film having a thickness of 500 angstroms was formed on the substrate.
上記成膜の過程において、実施例１により生じたアーク放電は０回／秒であった。これに対して、比較例１により生じたアーク放電は２００回／秒であった。
上記結果から、比較例１はイオンビーム源１５のカソード２１の表面に着膜した物質が、異常放電によってパーティクルやスプラッシュの発生原因となるおそれがあるのに対して、実施例１はそのおそれがないことがわかった。
During the film formation process, the arc discharge generated in Example 1 was 0 times / second. On the other hand, the arc discharge generated in Comparative Example 1 was 200 times / second.
From the above results, in Comparative Example 1, the material deposited on the surface of the cathode 21 of the ion beam source 15 may cause generation of particles and splash due to abnormal discharge, whereas Example 1 may cause this. I knew it was n’t there.
次に、実施例１の成膜装置を使用し、カソード２１に印加する電圧を変更して真空チャンバー１内に発生するパーティクルの密度をパーティクルの粒径毎に測定した。
（実施例３）
カソード２１に特に電圧を印可せず、真空チャンバー１内を常温で０．２Ｐａに減圧して１０分間成膜を行い、Ｓｉ（Ｐ型）製基板上に膜厚５００オングストロームのＳｉＯ２膜を形成した例を実施例３とした。
（実施例４）
カソード２１に−５０Ｖの電圧を印加した例を実施例４とした。
Next, using the film forming apparatus of Example 1, the voltage applied to the cathode 21 was changed, and the density of particles generated in the vacuum chamber 1 was measured for each particle diameter.
(Example 3)
No voltage is applied to the cathode 21 and the vacuum chamber 1 is decompressed to 0.2 Pa at room temperature to form a film for 10 minutes to form a 500 angstrom thick SiO 2 film on a Si (P-type) substrate. Example 3 was designated as Example 3.
Example 4
An example in which a voltage of −50 V was applied to the cathode 21 was taken as Example 4.
（実施例５）
カソード２１に−５０Ｖ、周波数２５０ｋＨｚのパルスを重畳した例を実施例５とした。
(Example 5)
An example in which a pulse of −50 V and a frequency of 250 kHz was superimposed on the cathode 21 was taken as Example 5.
上記測定結果を図３に示す。
図３から、いずれの粒径に対しても、実施例３、４、５の順に真空チャンバー１内のパーティクル密度が減少していることが分かり、カソード２１に負の電圧を印可すること、更に、パルスを重畳することが異常放電を低減するのに有効であることがわかった。
The measurement results are shown in FIG.
From FIG. 3, it can be seen that the particle density in the vacuum chamber 1 decreases in the order of Examples 3, 4, and 5 for any particle size, and a negative voltage is applied to the cathode 21. It was found that superimposing pulses is effective in reducing abnormal discharge.
１ 真空チャンバー
２ 回転ドラム
３ 第１成膜ゾーン
４ 第２成膜ゾーン
５ 酸化ゾーン
６ スパッタカソード
７ ターゲット
８ ＡＣ電源
９ ガス導入系
１０ スパッタカソード
１１ ターゲット
１２ ＡＣ電源
１３ ガス導入系
１４ 酸化プラズマ源
１５ イオンビーム源
１７ 磁場発生手段
１８ アノード
１９ 反応性ガス導入手段
２０ 磁気ギャップ
２１ カソード
２３ 絶縁体
３０ イオンビーム源
３１ 誘電材料
３２ カソード
３４ 電荷
DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Rotating drum 3 1st film-forming zone 4 2nd film-forming zone 5 Oxidation zone 6 Sputter cathode 7 Target 8 AC power supply 9 Gas introduction system 10 Sputter cathode 11 Target 12 AC power supply 13 Gas introduction system 14 Oxidation plasma source 15 Ion beam source 17 Magnetic field generation means 18 Anode 19 Reactive gas introduction means 20 Magnetic gap 21 Cathode 23 Insulator 30 Ion beam source 31 Dielectric material 32 Cathode 34 Charge
Claims (6)
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| JP2006312248A JP5016899B2 (en) | 2006-11-17 | 2006-11-17 | Ion beam source and film forming apparatus provided with the same |
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| JP2008127610A true JP2008127610A (en) | 2008-06-05 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101403101B1 (en) * | 2012-10-17 | 2014-06-03 | 주식회사 포스코 | Linear ion beam source |
| KR101404916B1 (en) | 2012-09-06 | 2014-06-10 | 한국기계연구원 | Unit for supplying gas and ion beam source having the unit |
| KR101447779B1 (en) * | 2012-09-06 | 2014-10-08 | 한국기계연구원 | Ion beam source and deposition apparatus having the ion beam source |
| WO2015019730A1 (en) * | 2013-08-06 | 2015-02-12 | 株式会社神戸製鋼所 | Film forming device |
| CN106663578A (en) * | 2014-07-29 | 2017-05-10 | 发仁首路先株式会社 | Ion source |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037717A (en) * | 1999-01-04 | 2000-03-14 | Advanced Ion Technology, Inc. | Cold-cathode ion source with a controlled position of ion beam |
| JP2001090835A (en) * | 1999-09-24 | 2001-04-03 | Teikoku Piston Ring Co Ltd | Hard coating and sliding member coated therewith and its manufacturing method |
| JP2004269928A (en) * | 2003-03-06 | 2004-09-30 | Ulvac Japan Ltd | Method and apparatus for manufacturing dielectric thin film |
| WO2005098081A1 (en) * | 2004-04-09 | 2005-10-20 | Ulvac, Inc. | Film forming apparatus and film forming method |
| US6987364B2 (en) * | 2003-09-03 | 2006-01-17 | Guardian Industries Corp. | Floating mode ion source |
-
2006
- 2006-11-17 JP JP2006312248A patent/JP5016899B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037717A (en) * | 1999-01-04 | 2000-03-14 | Advanced Ion Technology, Inc. | Cold-cathode ion source with a controlled position of ion beam |
| JP2001090835A (en) * | 1999-09-24 | 2001-04-03 | Teikoku Piston Ring Co Ltd | Hard coating and sliding member coated therewith and its manufacturing method |
| JP2004269928A (en) * | 2003-03-06 | 2004-09-30 | Ulvac Japan Ltd | Method and apparatus for manufacturing dielectric thin film |
| US6987364B2 (en) * | 2003-09-03 | 2006-01-17 | Guardian Industries Corp. | Floating mode ion source |
| WO2005098081A1 (en) * | 2004-04-09 | 2005-10-20 | Ulvac, Inc. | Film forming apparatus and film forming method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101404916B1 (en) | 2012-09-06 | 2014-06-10 | 한국기계연구원 | Unit for supplying gas and ion beam source having the unit |
| KR101447779B1 (en) * | 2012-09-06 | 2014-10-08 | 한국기계연구원 | Ion beam source and deposition apparatus having the ion beam source |
| KR101403101B1 (en) * | 2012-10-17 | 2014-06-03 | 주식회사 포스코 | Linear ion beam source |
| WO2015019730A1 (en) * | 2013-08-06 | 2015-02-12 | 株式会社神戸製鋼所 | Film forming device |
| JP2015030906A (en) * | 2013-08-06 | 2015-02-16 | 株式会社神戸製鋼所 | Film deposition apparatus |
| TWI554629B (en) * | 2013-08-06 | 2016-10-21 | Kobe Steel Ltd | Film forming device |
| US9752229B2 (en) | 2013-08-06 | 2017-09-05 | Kobe Steel, Ltd. | Film deposition device |
| CN106663578A (en) * | 2014-07-29 | 2017-05-10 | 发仁首路先株式会社 | Ion source |
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