KR101437583B1 - Lithography apparatus and lithography method - Google Patents

Abstract

A lithography apparatus and a lithography method are disclosed. The lithographic apparatus of the present invention includes a lithographic apparatus for performing a lithographic process on a substrate, the apparatus comprising an analysis apparatus for analyzing the crystal structure of the substrate and means for adjusting the position of the substrate based on the analyzed crystal structure And the lithographic apparatus is configured to perform a lithographic process on the position-adjusted substrate.

Description

[0001] The present invention relates to a lithography apparatus and a lithography method,

1 to 7 are sectional views showing a lithographic apparatus according to embodiments of the present invention.

FIG. 8 is a block diagram illustrating a lithography method according to an exemplary embodiment of the present invention.

FIGS. 9A and 9B are plan views showing a state before and after a position adjustment of a lower structure in a lithography method according to an embodiment of the present invention, respectively.

10 is a block diagram illustrating a lithography method according to another embodiment of the present invention.

Description of the Related Art [0002]

1: Chamber 5, 5 ': Structure

10: pedestal 20: stage

30: electron gun 40: first detector

50: second detector 60: first light source

70: third detector 80a, 80b: dedicated window

90: second light source 100: fourth detector

150: controller 200: scatter pattern

P1: first part

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lithographic apparatus and a lithography method, and more particularly, to a lithographic apparatus and a lithography method capable of performing lithography in consideration of a crystal structure of a material film formed on a substrate.

A lithography process is a process of transferring a circuit pattern onto an underlying film (e.g., a wafer). [0003] As the degree of integration of semiconductor devices has increased, various lithography processes have been developed to realize finer circuit patterns.

However, the lithography process (hereinafter, a conventional lithography process) developed so far has been carried out irrespective of the crystal structure and orientation of the underlying structure.

As the semiconductor device is miniaturized, not only the material constituting the device but also the crystal structure and direction of the material need to be taken into consideration. This is because the crystal orientation of the material constituting the device may affect the characteristics of the device. For example, the charge mobility characteristics may vary depending on the crystal orientation of the material forming the channel.

However, since the conventional lithography process is performed irrespective of the crystal structure and orientation of the underlying structure, there are limitations in implementing devices having excellent characteristics.

The present invention provides a lithographic apparatus and a lithography method capable of patterning the material film in consideration of a crystal structure and a direction of a material film formed on a substrate.

According to an aspect of the present invention, there is provided a lithographic apparatus for performing a lithography process on a substrate, the apparatus comprising an analyzer for analyzing a crystal structure of the substrate.

The substrate may be loaded on a stage that is moved in any direction of the lithographic apparatus.

The substrate may include a semiconductor substrate, a material layer sequentially formed on the semiconductor substrate, and a resin layer, and the analyzing apparatus may be an apparatus for analyzing a crystal structure of the material layer.

The lithographic apparatus may be an electron beam lithography apparatus or a photolithography apparatus.

The photolithographic apparatus may include a light source that emits one of infrared light, visible light, ultraviolet light, and X-ray.

The analyzer may be an analyzer using an electron or light diffraction or scattering method.

The analyzer may include a source that emits one of an electron, a neutron, an X-ray, an ultraviolet ray, a visible ray, and an infrared ray.

The source for performing the lithography process on the resin film and the source of the analyzer may be the same.

When the source for performing the lithography process on the resin film and the source of the analyzer are the same, the source may be an electron gun. The lithographic apparatus may further include a first detector and a second detector, wherein the first detector detects secondary electrons reflected from a surface of the substrate and / or a stage on which the substrate is loaded, Or a secondary electron detector that provides position information of the stage, and the second detector may be an electron detector of the analyzer.

When the source for performing the lithography process on the resin film and the source of the analyzer are the same, the source may be a light source. At this time, the analyzing apparatus may include a photodetector, and the light source may include an optical microscope for providing positional information of the substrate.

A source for performing a lithography process on the resin film, and a source for analyzing a crystal structure of the analyzer, the source for performing a lithography process on the resin film, the source for analyzing the crystal structure of the analyzer, May be different.

The source for performing the lithography process for the resin film may be an electron gun, and the source of the analyzer may be a light source or a neutron gun. The lithographic apparatus may further include a first and a third detector, wherein the first detector detects secondary electrons reflected from a surface of the substrate and / or a stage on which the substrate is loaded, And / or a secondary electron detector for providing position information of the stage, and the third detector may be a photodetector or a neutron detector as the detector of the analyzing apparatus.

Wherein the source of the analyzer is the light source and the third detector is the photodetector, further comprising a first dedicated window between the light source and the substrate, wherein the light source, the first dedicated window, They can be arranged on the same straight line. A second dedicated window is provided between the photodetector and the substrate, and the photodetector, the second dedicated window, and the substrate may be disposed on the same straight line.

The source for performing the lithography process on the resin film may be a light source, and the source of the analyzer may be any other light source, electron gun, and neutron gun. Here, the analyzer may include any one of a photodetector, an electron detector, and a neutron detector, and the light source for performing the lithography process on the resin film may further include an optical microscope .

Wherein the lithographic apparatus includes an electron gun as a source for a lithography process for the resin film and a crystal structure analysis of the analyzer, and further includes any one of a light source and a neutron gun as another source for analyzing the crystal structure of the analyzer . Here, the lithographic apparatus includes first to third detectors, wherein the first detector detects secondary electrons reflected from a surface of the substrate and / or a stage on which the substrate is loaded, The second detector may be an electron detector of the analyzing apparatus, and the third detector may be a photodetector or a neutron detector of the analyzing apparatus.

Wherein the other source of the analyzer is the light source and the third detector is the photodetector, further comprising a first dedicated window between the light source and the substrate, wherein the light source, the first dedicated window, The substrate may be arranged on the same straight line. A second dedicated window is further provided between the photodetector and the substrate, and the photodetector, the second dedicated window, and the substrate may be arranged on the same straight line.

According to another aspect of the present invention, there is provided a lithography method for performing a lithography process on a substrate, comprising: a first step of analyzing a crystal structure of the substrate; A second step of adjusting the position of the substrate based on the analyzed crystal structure; And a third step of performing a lithography process on the substrate.

The crystal structure analysis can be performed in an analyzing apparatus including a stage capable of moving the substrate in an arbitrary direction.

The substrate may include a semiconductor substrate and a material film and a resin film sequentially formed on the semiconductor substrate, and the analyzing apparatus may be an apparatus for analyzing a crystal structure of the material film.

The first to third steps may be performed in an electron beam lithography apparatus or a photolithography apparatus including the analyzing apparatus.

The resin film may be applied before the first step, and the third step may be a lithography process for the resin film.

The resin film may be applied between the first step and the second step, and the third step may be a lithography process for the resin film. In this case, the alignment state of the substrate before and after the resin film is coated is preferably the same.

In order to make the alignment state of the substrate the same before and after the application of the resin film, a portion having a curvature of 0 on the side of the substrate may be used as a reference.

The pattern formed on the substrate may be used as a reference to make the alignment state of the substrate the same before and after the application of the resin film.

Hereinafter, a lithographic apparatus and a lithographic method according to preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In this process, the thicknesses of the layers or regions shown in the figures are exaggerated for clarity of the description.

Figure 1 shows a lithographic apparatus according to an embodiment of the invention.

Referring to Fig. 1, a pedestal 10 is provided at the bottom of a chamber 1, and a stage 20 is provided on a pedestal 10. The pedestal 10 is designed to move the stage 20 in an arbitrary direction and can be connected to a predetermined controller (not shown). The stage 20 can be rotated, horizontally and vertically moved, and the tilt can also be adjusted. On the stage 20, a predetermined structure 5 including an object of the lithography process is loaded. The structure 5 may include a semiconductor substrate and a material film formed on the semiconductor substrate, and a resin layer may be further provided on the material film. The resin film may be an electron beam resist layer.

An electron gun 30 for generating an electron beam on the ceiling of the chamber 1 above the stage 20 is provided. The first and second detectors 40 and 50 may be provided on both side walls of the chamber 1, for example, on opposite side walls facing each other. The first detector 40 may be a secondary electron detector that detects secondary electrons reflected from the surface of the structure 5 and / or the stage 20 and provides position information of the structure 5 and / have. For example, the first detector 40 may be a detector of a scanning electron microscope (SEM). The second detector 50 may be an electron detector that detects the diffraction pattern (or scattering pattern) of electrons diffracted (or scattered) in the structure 5. The second detector 50 may be connected to the pedestal 10 via the controller. The electron gun 30 and the second detector 50 constitute an analyzing apparatus for analyzing the crystal structure of the structure 5. Accordingly, the electron gun 30 is an electron emission source in a lithography process for patterning the resin film while being a source of the analysis apparatus.

In the lithographic apparatus of FIG. 1, the source of the analyzing apparatus for analyzing the crystal structure of the structure 5 is the same as the source of the lithography process, but the source of the analyzing apparatus and the source of the lithography process may be different.

Figure 2 shows a lithographic apparatus according to another embodiment of the present invention. 1 and 2, the same reference numerals denote the same elements, and a description of the same elements will be omitted.

Referring to FIG. 2, a first light source 60 and a third detector 70 are provided on both side walls of the chamber 1, for example, opposite side walls facing each other. The first light source 60 and the third detector 70 may constitute an analyzing device for analyzing the crystal structure of the material film of the structure 5. The first light source 60 may be a source that emits either X-rays, ultraviolet light, visible light, or infrared light. The third detector 70 may be a photodetector that detects the diffraction pattern (or scattering pattern) of the light diffracted (or scattered) in the structure 5. The lithographic apparatus of FIG. 2 may not include the second detector 50 of FIG. The electron gun 30 is used as a source for a lithography process.

A neutron gun may be used instead of the first light source 60 as a source for obtaining a diffraction (or scattering) pattern in the lithographic apparatus of FIG. In this case, the third detector 70 may be a neutron detector.

In Fig. 2, the pedestal 10 and the third detector 70 may be connected to each other with a controller (not shown) therebetween.

On the other hand, the lithographic apparatus of FIG. 2 may include the second detector 50 of FIG. An example thereof is shown in Fig. In the lithography apparatus of FIG. 3, either the electron gun 30 or the first light source 60 can be used as a source of the analyzer. When the electron gun 30 is used as the source of the analyzing apparatus, a second detector 50 can be used as a detector, and when the first light source 60 is used as a source of the analyzing apparatus, 70) may be used.

In Fig. 3, the pedestal 10, the second detector 50 and the third detector 70 may be connected to each other with a controller (not shown) therebetween.

The first light source 60 and the third detector 70 may be located outside the chamber 1, as shown in Figures 4 and 5. In this case, it is preferable to provide transparent windows 80a and 80b on both side walls of the chamber 1. The central portion of the first dedicated window 80a among the dedicated windows 80a and 80b is located on the first straight line connecting the structure 5 and the first optical source 60 and the second dedicated window 80b is located on the structure 5) and the third detector (70).

Although the lithographic apparatuses of the present invention described above are electron beam lithography apparatuses that use the electron gun 30 as an electron emission source, the lithographic apparatus of the present invention is a photolithography apparatus using a light source that emits light instead of the electron gun 30 It is possible.

A photolithographic apparatus according to embodiments of the present invention is shown in Figs. 6 and 7. Fig. 2, 6, and 7, the same reference numerals denote the same elements, and a description of the overlapping elements will be omitted.

Referring to FIG. 6, the structure 5 may include a semiconductor substrate and a material film formed on the semiconductor substrate, and a resin film may be coated on the material film. Here, the resin film may be a photo resist layer. A second light source (90) spaced apart from the structure (5) by a predetermined distance is disposed on the structure (5). The second light source 90 may use any one of infrared rays, visible rays, ultraviolet rays, and X-rays. The second light source 90 is the source for the photolithography process and the source of the analyzer for analyzing the crystal structure of the structure 5. There is a fourth detector 100, which is a photodetector, as the detector of the analyzer. The position of the fourth detector 100 may be similar to that of the second detector 50 of FIG. The fourth detector 100 may be in the position of the first detector 40 of Fig. The second light source 90 may also serve as an optical microscope for providing the position information of the structure 5. For this purpose, the second light source 90 may incorporate an optical microscope. In Fig. 6, the pedestal 10 and the fourth detector 100 may be connected to each other with the controller 150 therebetween.

FIG. 6 shows a photolithography apparatus in which the source of the analysis apparatus and the source of the lithography process are the same, but in the photolithography apparatus according to another embodiment of the present invention, the source of the analysis apparatus and the source of the lithography process may be different. An example thereof is shown in Fig.

The photolithography apparatus of FIG. 7 includes a first light source 60, a third detector 70, and a second light source 90. The first optical source 60 and the third detector 70 constitute an analyzing device for analyzing the crystal structure of the structure 5. The second light source 90 may serve as a source of light for the photolithography process and also serve as an optical microscope for providing the position information of the structure 5. In the lithographic apparatus of Figure 7, the first light source 60 may be replaced by a neutron gun or electron gun. At this time, the third detector 70 may be a neutron detector or an electron detector. In Fig. 7, the pedestal 10 and the third detector 70 may be connected to each other with a controller (not shown) therebetween.

On the other hand, the electron beam lithography apparatus of FIGS. 1 to 5 includes a chamber 1 for a vacuum atmosphere, but the photolithography apparatus of FIGS. 6 and 7 may not have a chamber 1.

FIG. 8 shows a lithography method step by step according to an embodiment of the present invention. In this embodiment, the lithographic apparatus of Figs. 1 to 7 can be used.

Referring to FIG. 8, a lithography method (hereinafter referred to as a first method) according to an embodiment of the present invention is a lithography method for patterning a resin film formed on a substructure. The first method includes a first step (S1) of applying a resin film on the substructure, a loading step of loading the substructure coated with the resin film on a stage, and analyzing the crystal structure of the substructure with an analyzer A third step S3 of adjusting the position of the lower structure based on the analyzed crystal structure, and a fourth step S4 of performing a lithography process for patterning the resin film do.

Here, the substructure and the stage may correspond to the structure 5 and the stage 20 of FIG. 1 or 6, respectively. The stage is provided on the pedestal 10 of Fig. 1 and can be moved in any direction. The analytical apparatus may be any one of the analytical apparatuses of FIGS. 1 to 7 or a modification thereof, and the lithography process may be an electron beam lithography process or a photolithography process. The analysis target of the analysis apparatus may be a predetermined material film included in the lower structure.

In the first method, after the resin film is applied on the lower structure, the crystal structure of the lower structure is analyzed. Therefore, it is preferable that the source of the analyzer is a source that does not affect the characteristics of the resin film. For example, when the source of the analyzer is X-ray and the resin film is an electron beam resist film, the X-ray may not affect the characteristics of the electron beam resist film. If the source of the analyzer can adversely affect the properties of the resin film, it may be desirable to strip off a portion of the resin film prior to performing the analysis, and to perform the analysis on the exposed lower structure Can be performed. Here, the portion of the resin film to peel off is preferably a dummy portion which is not used as an actual device.

After the analysis is completed, the position of the substructure is adjusted based on the analyzed crystal structure in a third step (S3).

FIGS. 9A and 9B show the positions of the lower structure 5 'before and after the third step S3, respectively. Each of Figures 9A and 9B shows the scattering pattern 200 detected by the analyzer. For example, the scattering pattern 200 is obtained using a transmission electron microscope (TEM) apparatus, and may be a fourier diffractogram. In a fourier diffractogram, the face appears as a spot. From the scattering pattern 200, information on the crystal structure and direction of the lower structure 5 'can be obtained.

9A and 9B, the crystal structure of the lower structure 5 'is analyzed based on the scattering pattern 200, and the position of the lower structure 5' is rotated by the first angle? 1. At this time, vertical and / or horizontal movement of the lower structure 5 'may be performed and the inclination angle of the lower structure 5' may be adjusted as necessary. In Figs. 9A and 9B, reference numerals D1 and D2 denote first and second directions, respectively. After the position of the lower structure 5 'is adjusted in this way, a lithography process is performed.

FIG. 10 shows a step of a lithography method (hereinafter, a second method) according to another embodiment of the present invention. In the first method, the analysis step is performed after applying the resin film. In the second method of FIG. 10, the resin film is coated after the analysis step.

Referring to FIG. 10, the second method is a lithography method for patterning a resin film formed on a substructure, wherein the second method includes a first step (S1 ') of analyzing the crystal structure of the substructure with an analyzer, A second step (S2 ') of applying a resin film on the lower structure, a third step (S3') of adjusting the position of the lower structure based on the analyzed crystal structure, and a lithography process for patterning the resin film (S4 '). ≪ / RTI >

The first, third and fourth steps S1 ', S3', S4 'may be performed in the lithographic apparatus of FIGS. 1 to 7 and the second step S2' . Therefore, after the first step S1 ', the substructure is unloaded from the stage, and the substructure before the third step S3' is again loaded onto the stage. Thereafter, the third step S3 'is performed. Therefore, the position of the substructure on the stage before and after the application of the resin film in the second method should be the same. In order to uniformly align the position of the lower structure on the stage before and after the application of the resin film, a portion of the side of the lower structure that has a curvature of 0, for example, the first portion P1 of FIG. have. Alternatively, a pattern may be formed on the substructure to match the position of the substructure on the stage before and after the application of the resin film, and the pattern may be used as a reference. At this time, it is preferable that the pattern is formed in a dummy region which is not used as an actual device.

Although a number of matters have been specifically described in the above description, they should be interpreted as examples of preferred embodiments rather than limiting the scope of the invention. For example, those skilled in the art will appreciate that the position of each component of the lithographic apparatus of the present invention illustrated in FIGS. 1 through 7 may vary widely, It will be appreciated that the components making up the device may vary. Therefore, the scope of the present invention is not to be determined by the described embodiments but should be determined by the technical idea described in the claims.

As described above, by using the lithographic apparatus and method of the present invention, a patterned film can be formed on the material film in consideration of the crystal structure and direction of the material film formed on the substrate. Therefore, by using the present invention, the characteristics of the device such as the charge mobility of the channel can be improved.

Claims (32)

A lithographic apparatus for performing a lithographic process on a substrate, An analysis device for analyzing a crystal structure of the substrate; And And means for adjusting the position of the substrate based on the analyzed crystal structure, Wherein the lithographic apparatus is configured to perform a lithographic process on the position-adjusted substrate. 2. The lithographic apparatus according to claim 1, wherein the substrate is loaded on a stage that is moved in any direction of the lithographic apparatus. The apparatus of claim 1, wherein the substrate comprises a semiconductor substrate, a material layer sequentially formed on the semiconductor substrate, and a resin layer, and the analyzing apparatus is an apparatus for analyzing the crystal structure of the material layer Lt; / RTI > 2. The lithographic apparatus according to claim 1, wherein the lithographic apparatus is an electron beam lithography apparatus or a photolithography apparatus. 5. The lithographic apparatus of claim 4, wherein the photolithographic apparatus comprises a light source that emits one of infrared, visible, ultraviolet, and X-rays. The lithographic apparatus according to claim 1, wherein the analyzer is an analyzer using an electron or light diffraction or scattering method. 7. The lithographic apparatus of claim 6, wherein the analyzer comprises a source that emits one of an electron, a neutron, an X-ray, an ultraviolet ray, a visible ray, and an infrared ray. The lithographic apparatus according to claim 3, wherein the source for performing the lithography process on the resin film and the source of the analyzer are the same. The lithographic apparatus of claim 8, wherein the source is an electron gun. The apparatus of claim 9, further comprising first and second detectors, wherein the first detector detects secondary electrons reflected from a surface of the substrate or a stage on which the substrate is loaded, Wherein the second detector is a secondary electron detector that provides position information and the second detector is an electron detector of the analyzer. The lithographic apparatus according to claim 8, wherein the source is a light source. 12. A lithographic apparatus according to claim 11, wherein the analyzing apparatus comprises a photodetector, and wherein the light source comprises an optical microscope for providing positional information of the substrate. The apparatus of claim 3, further comprising: a source for performing a lithography process on the resin film; and a source for analyzing a crystal structure of the analyzer, wherein a source for performing a lithography process on the resin film, A lithographic apparatus characterized in that the source for crystal structure analysis is different. 14. The lithographic apparatus of claim 13, wherein the source for performing the lithographic process on the resin film is an electron gun, and the source of the analyzer is a light source or a neutron gun. 15. The apparatus of claim 14, further comprising a first and a third detector, wherein the first detector detects secondary electrons reflected from a surface of the substrate or a stage on which the substrate is loaded, Wherein the third detector is a photodetector or a neutron detector as a detector of the analyzer. ≪ RTI ID = 0.0 > 8. < / RTI > 14. The lithographic apparatus of claim 13, wherein the source for performing the lithographic process on the resin film is a light source, and the source of the analyzer is any other light source, electron gun, and neutron gun. The lithographic apparatus according to claim 16, wherein the analyzing apparatus includes any one of a photodetector, an electron detector, and a neutron detector, and the light source for performing the lithography process on the resin film includes an optical microscope ≪ / RTI > The apparatus of claim 3, further comprising: an electron gun as a source for lithography processing of the resin film and analysis of a crystal structure of the analyzer, wherein the other source for analyzing the crystal structure of the analyzer is any one of a light source and a neutron gun ≪ / RTI > The apparatus of claim 18, further comprising first to third detectors, wherein the first detector detects secondary electrons reflected from a surface of the substrate or a stage on which the substrate is loaded to detect a position of the substrate or the stage Wherein the second detector is an electron detector of the analyzer and the third detector is a photodetector or neutron detector of the analyzer. 16. The apparatus of claim 15, wherein the source of the analyzer is the light source and the third detector is the photodetector, further comprising a first dedicated window between the light source and the substrate, Wherein the dedicated window and the substrate are arranged on the same straight line. 21. A lithographic apparatus according to claim 15 or 20, characterized in that a second dedicated window is provided between the photodetector and the substrate, and the photodetector, the second dedicated window and the substrate are arranged on the same straight line. . 20. The apparatus of claim 19, wherein the other source of the analyzer is the light source and the third detector is the photodetector, further comprising a first dedicated window between the light source and the substrate, Wherein the first dedicated window and the substrate are arranged on the same straight line. A lithographic apparatus according to claim 19 or claim 22, further comprising a second dedicated window between the photodetector and the substrate, wherein the photodetector, the second dedicated window and the substrate are arranged on the same straight line Device. A lithography method for performing a lithography process on a substrate, A first step of analyzing a crystal structure of the substrate; A second step of adjusting the position of the substrate based on the analyzed crystal structure; And And a third step of performing a lithography process on the substrate. 25. The lithography method of claim 24, wherein the crystal structure analysis is performed in an analyzing apparatus comprising a stage capable of moving the substrate in any direction. 26. The lithography method of claim 25, wherein the substrate comprises a semiconductor substrate and a material film and a resin film sequentially formed on the semiconductor substrate, and the analyzing apparatus is an apparatus for analyzing a crystal structure of the material film. 27. The lithography method of claim 26, wherein the first to third steps are performed in an electron beam lithography apparatus or a photolithography apparatus including the analyzing apparatus. 27. The lithography method of claim 26, wherein the resin film is applied before the first step, and wherein the third step is a lithography process for the resin film. 27. The lithography method of claim 26, wherein the resin film is applied between the first step and the second step, and the third step is a lithography process for the resin film. 30. The lithography method of claim 29, wherein the alignment of the substrate before and after applying the resin film is the same. 31. The lithography method according to claim 30, wherein a portion of the side surface of the substrate having a curvature of zero is used as a reference in order to make the alignment state of the substrate the same before and after the application of the resin film. 31. The lithography method according to claim 30, wherein a pattern formed on the substrate is used as a reference in order to make the alignment state of the substrate the same before and after the application of the resin film.

Images