KR101429732B1 - a dry stripping device, a nozzle generating superspeed particle beam for dry stripping and a dry stripping method of using superspeed particle beam - Google Patents

Abstract

A dry separation method, according to the present invention, is a dry separation method for ashing a photoresist, comprising a spraying and separating step of spraying sublimation particles on the photoresist and separating the photoresist. Also, a dry separation apparatus, according to the present invention, is a dry separation apparatus for ashing a photoresist, comprising a nozzle for generating a high-speed particle beam that comprises sublimation particles, wherein the nozzle generates ultra-high speed uniform nanoparticles by enabling particle generation gas comprising carbon dioxide to pass through and comprises an expanding portion having a shape that the cross sectional area thereof becomes wider toward a discharge side of the nozzle, wherein the expanding portion sequentially comprises a first expanding portion and a second expanding portion, and wherein an average expansion angle of the second expanding portion is bigger than an expansion angle of the first expanding portion.

Description

A dry peeling apparatus, a nozzle for generating a high speed particle beam for dry peeling, and a dry peeling method using a high speed particle beam. {a dry stripping device, a nozzle generating superspeed particle beam for dry stripping and a dry stripping method using a superspeed particle beam}

The present invention relates to a dry peeling apparatus, a nozzle for generating a high speed particle beam for dry peeling, and a dry peeling method using a high speed particle beam. More particularly, the present invention relates to a dry peeling apparatus, The present invention relates to a dry peeling apparatus for spraying and removing sublimated fast incidence of coated photoresist, a nozzle for generating a high speed particle beam for dry peeling, and a dry peeling method using a high speed particle beam.

Semiconductor devices are generally manufactured by forming a pattern on a wafer by a photolithographic process. More specifically, after forming a photoresist film on a wafer, the photoresist pattern is formed by exposing and developing the photoresist film, and etching the silicon film formed on the wafer using the photoresist pattern.

As described above, in the semiconductor manufacturing process, the photoresist is coated and then the surface is etched for the photolithography process. The step of removing the remaining photoresist after the etching process is referred to as an ashing process and is mainly performed by a chemical method.

If the remaining photoresist can not be completely removed, the ashing process is a very important part in the semiconductor manufacturing process because the second process causes additional defects.

Conventional chemical wet ashing processes have a problem in that they have to cope with various application characteristics of the photoresist used for coating, and there are various problems as described below.

KOKAI Publication No. 10-2004-0098751 discloses a method of removing a modified and cured resist at a high temperature and a low temperature in a short period of time by adding a peeling accelerator in addition to a water-soluble organic amine, a polar solvent and a corrosion inhibitor And a peeling liquid. Korean Patent Laid-Open Publication No. 10-2006-0024478 discloses a photoresist stripper composition comprising a cyclic amine, a solvent, a corrosion inhibitor, and a detachment promoter, so that even if an isopropyl alcohol (IPA) rinse process is omitted, And a photoresist stripping liquid composition in which the peeling force is greatly improved is disclosed. JP2006072083A discloses a technique capable of peeling not only ordinary resist but also thermally cured resist by using phosphoric acid ester and dissolved ozone in the vicinity of ordinary temperature.

However, in the case of the peeling solution described in Korean Patent Laid-Open Publication No. 10-2004-0098751, the corrosion inhibiting effect of the metal wiring is insufficient, and in the case of the peeling solution described in Korean Patent Laid-Open Publication No. 10-2006-0024478, The peeling force for a resist generated under severe conditions such as dry etching residue is insufficient, and the peeling solution of JP2006072083A has a disadvantage that corrosion to the lower metal film is likely to occur due to dissolved ozone.

In addition, the chemical wet ashing method inevitably uses many chemicals, and there are fundamental problems such as environmental problems and maintenance costs. As described above, many improvements have been made in recent years, but there is still a great lack of removal performance.

The present invention solves the problems of the chemical wet ashing process described above by allowing the dry process of peeling off the photoresist by ejecting the sublimable solid particles by peeling in the wet ashing process, It is an object of the present invention to provide a dry peeling apparatus, a nozzle for generating a high-speed particle beam for dry peeling, and a dry peeling method using a high-speed particle beam, which can solve the problems and improve the peeling performance drastically.

In order to achieve the above object, a dry etching method according to the present invention is a dry etching method for ashing a photoresist. The dry etching method includes a spraying step and a peeling step for spraying sublimation particles to the photoresist to peel off the photoresist .

The dry-type peeling apparatus according to the present invention is a dry-type peeling apparatus for ashing a photoresist, which comprises a nozzle for generating a high-speed particle beam composed of sublimation particles, wherein the nozzle passes a particle- A nozzle for producing uniform nanoparticles, comprising: an expanding portion having a cross-sectional area wider toward an outlet side of a nozzle, wherein the expanding portion includes a first expanding portion and a second expanding portion sequentially, And the expansion angle is larger than the expansion angle of the first expanding portion.

The present invention utilizes a new type of high-speed particle beam spraying method, which is free from the problems of complicated equipment and process steps according to existing chemical methods, and has process efficiency, productivity, economical efficiency and environmental advantage simultaneously.

 Further, the present invention has the effect of generating nano-sized sublimation particles at room temperature without any separate cooling device and significantly increasing the efficiency of peeling (ashing) by spraying the particles at ultra-high speed.

More specifically, by providing an orifice, it is possible to induce nucleation with high density and uniformity without additional cooling device through rapid expansion.

Then, the nuclei generated through the first expanding portion having a gentle expansion angle can be grown to form nano-sized sublimation particles, and the particles formed can be accelerated by expanding at an increased expansion angle through the second expanding portion .

Further, the third expanding portion may be provided to adjust the peeling point to further increase the efficiency of peeling (ashing), while the exit surface of the nozzle may be obliquely cut to improve the proximity to the ashing object.

1 is a conceptual diagram showing a process of removing a photoresist layer formed over a wide range, as a dry peeling method according to an embodiment of the present invention.
FIG. 2 shows an experimental example showing the results according to FIG. 1, wherein FIG. 2A shows before ashing, and FIG. 2B shows after ashing.
FIG. 3 is a conceptual view showing a process of removing a photoresist layer formed on a pattern after pattern formation, according to an embodiment of the present invention.
FIG. 4 shows an experimental example showing the results according to FIG. 3, wherein FIG. 3A shows before ashing, and FIG. 3B shows after ashing.
FIG. 5 is a conceptual view showing a process of selectively removing a photoresist layer using a photoresist etching mask according to an embodiment of the present invention. FIG.
FIG. 6 shows an experimental example showing the results according to FIG. 5, wherein FIG. 3A shows before ashing, and FIG. 3B shows after ashing.
7 is a cross-sectional view illustrating a cross-section of a nozzle for generating a high-speed particle beam according to an embodiment of the present invention.
8 is a sectional view showing an expansion angle of an expanding portion of a nozzle for generating a fast particle beam according to an embodiment of the present invention.
FIG. 9 is a conceptual diagram illustrating a close relationship between a nozzle for generating a high-speed particle beam and an object according to an embodiment of the present invention.
Fig. 10 is a structural diagram showing a main configuration of a dry peeling apparatus according to an embodiment of the present invention.
11 is a flow chart showing detailed steps of a high-speed particle beam generating step in the case of using a mixed gas according to an embodiment of the present invention.
12 is a flow chart showing the detailed steps of the high-speed particle beam generating step in the case of using the pure particle generating gas according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

One embodiment of the present invention relates to a dry peeling method, which can be largely divided into 1) a high-speed particle beam generating step and 2) jetting and peeling.

First, the 'jetting and peeling step' will be described, and the high-speed particle beam generating step will be described.

FIGS. 1, 3 and 5 illustrate various embodiments of the present invention that are applied in the spraying and stripping steps, and the spraying and stripping steps are performed as shown in FIGS. 1, 3 and 5, As a dry peeling method for ashing, sublimation particles are sprayed onto the photoresist to peel off the photoresist.

More specifically, FIG. 1 is a conceptual diagram showing a process of removing a photoresist 110 layer formed over a relatively wide range on the upper surface of a wafer 100, which represents one embodiment of the dry peeling method according to the present invention . As shown in FIG. 1, the dry etching method according to an embodiment of the present invention shows that a predetermined surface of the photoresist 110 uniformly formed on the surface of the wafer 100 is stripped from the wafer 100.

Here, the photoresist 110 corresponds directly to the surface of the wafer 100, and the step of spraying and peeling thereof is to peel the photoresist 110 from the surface of the wafer 100.

Meanwhile, FIG. 2 shows an experimental example showing the results according to the process of FIG. 1, and FIG. 2 (a) shows before ashing and FIG. 2 (b) shows after ashing. As shown in FIG. 2 (a), the surface of the pre-ashing wafer 100 is covered with the photoresist 110 uniformly. However, after the ashing, the photoresist 110, as shown in FIG. 2 (b) It can be confirmed that a certain surface of the substrate is peeled off smoothly.

3 illustrates a dry etching method according to an embodiment of the present invention. A pattern portion 120 is formed on an upper surface of a wafer 100, and a photoresist 110 (not shown) formed on an upper surface of the pattern portion 120 ) Layer is removed. 3, the dry etching method according to an embodiment of the present invention shows that the photoresist 110 is stripped from the pattern portion 120 formed on the upper surface of the wafer 100. As shown in FIG.

Here, the photoresist 110 corresponds directly to the surface of the pattern unit 120, and the step of ejecting and peeling the photoresist 110 is to peel the photoresist 110 from the surface of the pattern unit 120.

4 shows experimental results showing the results of the process of FIG. 3. FIG. 4 (a1) and (a2) show the results before ashing, and FIGS. As shown in (a1) and (a2) in FIG. 4, the surface of the ashing pattern unit 120 is covered with the photoresist 110. However, after ashing, It can be seen that the photoresist 110 is peeled off and the surface of the pattern portion 120 is clearly exposed.

5, a pattern parent material 130 is formed on the upper surface of the wafer 100, and a photoresist (not shown) formed on the upper surface of the pattern parent material 130 is formed on the upper surface of the pattern parent material 130. [ (110) layer is selectively removed.

More specifically, a mask 140 is provided on the top of the photoresist layer 110 to selectively allow sublimation particles to pass therethrough, thereby selectively removing the photoresist 110 formed on the surface of the pattern parent material 130 .

Here, the photoresist 110 corresponds to the pattern formed on the surface of the patterned parent material 130, and the step of spraying and peeling thereof selectively removes the photoresist 110 from the surface of the patterned parent material 130 . In the present process, the pattern portion 120 can be formed according to the shape of the removed photoresist 110 by removing the photoresist 110 with a selected mask.

Meanwhile, FIG. 6 shows an experimental example showing the result of the process of FIG. 5, and FIG. 6 (a) shows before ashing and (b) shows after ashing. As shown in FIG. 6 (a), the surface of the pre-ashing pattern parent material 130 is covered with the photoresist 110, but after ashing, the photoresist 110 Can be confirmed to be peeled off according to the shape of the mask 140.

Hereinafter, the 'high speed particle beam generating step' will be described in more detail.

Before looking at the 'high-speed particle beam generating step', the 'nozzle for generating a high-speed particle beam' used in the 'high-speed particle beam generating step' will be described first.

FIGS. 7 and 8 are schematic views showing a cross-sectional view of a nozzle for generating a fast particle beam according to an embodiment of the present invention.

The nozzle for generating a high speed particle beam according to an embodiment of the present invention includes an orifice 12 provided in the nozzle neck 11 and an expanding portion extending from the outlet of the nozzle neck 11.

First, the orifice 12 adjusts the opening / closing cross-sectional area of the nozzle neck 11 to reduce the cross-sectional area of the nozzle neck 11 to a fine hole. The particle-forming gas (or the mixed gas of the particle-forming gas and the carrier gas) passing through the orifice 12 rapidly expands to generate nano-sized nuclei.

The orifice 12 is provided in the nozzle neck 11 but the nozzle neck 11 here means the portion having the smallest cross-sectional area in the nozzle 10. Therefore, the orifice 12 is provided at the inlet side of the expansion portion 12) are combined. That is, the orifice 12 itself can be regarded as one nozzle neck 11.

Meanwhile, in the case of the nozzle of the conventional particle generation apparatus, the process of cooling the particle generation gas is essential for nucleation. In the case of the nozzle 10 according to the present invention, the orifice 12 having the fine holes Nucleation can be induced at room temperature without a separate cooling device by rapidly expanding it. It is also possible to generate nuclei of uniform size in accordance with the rapid expansion.

The orifice 12 may have a diaphragm shape capable of adjusting the size of the fine hole as well as a shape in which the size of the fine hole is not variable. On the other hand, an orifice (not shown) 12) can be replaced with a method of controlling the size of the fine holes.

The nozzle for generating a high-speed particle beam according to the present invention includes an expanding portion provided on the exit side of the nozzle neck 11 or on the exit side of the orifice 12. Unlike the conventional particle generation nozzle, the bulging portion has a cross-sectional area increasing toward the outlet side. The incidence generating nozzle according to the prior art has a shape in which the size of the cross-sectional area is repeatedly increased / decreased for the growth of particles.

More specifically, the expanding portion includes a first expanding portion (14) and a second expanding portion (15) having different expansion angles.

The first bulging portion 14 preferably has an expansion angle (? ₁ ) of more than 0 ° and less than 30 °, and nucleation is performed while passing through the first bulging portion (14). The first expanding portion 14 is formed to have a relatively gentle expansion angle? ₁ as compared with the second expanding portion 15, and provides sufficient time for nucleation to take place.

The first bulging portion 14 is formed relatively long at a relatively gentle expansion angle (? ₁ ) to induce nucleation growth, while the boundary layer increases to reduce the effective area, thereby causing a decrease in the flow rate. Therefore, a second expanding portion 15 capable of obtaining an additional acceleration force is provided to compensate for this.

The average expansion angle (θ ₂₎ of the second expansion part 15 it is desirable to have an expansion angle (θ ₁₎ of compared 10 ° ~ 45 ° increased expansion angle (θ ₂₎ of the first expansion section (14) Do. The second expanding portion 15 is formed to have an abrupt expansion angle as compared with the first expanding portion 14 to form a high area ratio of the inlet and the outlet, thereby sufficiently accelerating the particles. Unlike the first expanding portion 14 and the third expanding portion 16, the second expanding portion 15 does not have a single expansion angle, and thus the average expansion angle is shown.

The second expansion part (15) extends from the first expansion part (14), and an internal shock wave is generated when the expansion angle of the connection part is intermittently changed greatly. Therefore, it is preferable that the second bulging portion 15 is formed to have a curved shape. More specifically, the connecting portion of the second expanding portion (15) with the first expanding portion (14) is formed to have the same expansion angle as the expansion angle (? ₁ ) of the outlet side of the first expanding portion (14) The expansion angle gradually increases toward the central portion of the second expansion part 15 to form a sharp inclination angle near the center part and the expansion angle decreases from the central part toward the outlet side of the second expansion part 15 And is preferably formed to prevent generation of internal shock waves.

It is contemplated that the expanding portion of the nozzle for generating a fast particle beam according to an embodiment of the present invention comprises the first expanding portion 14 and the second expanding portion 15 as described above, It may be considered to further include the third expanding portion 16.

The third expansion part (16) is connected to the outlet of the second expansion part (15) and forms the final outlet of the expansion part. The third expanding portion 16 serves to adjust the peeling point of the flow inside the nozzle 10. [

Said third expansion section 16 preferably has an expansion angle (θ ₂₎ doedoe than 10 ° ~ 45 ° is increased, the expansion is less than the maximum 90 ° angle (θ ₃₎ of the second expansion unit 15 .

When the back pressure at the rear end of the nozzle 10 is low, the separation point is further away from the nozzle neck 11 and the flow field can further grow. Therefore, the third expanding section 16 secures a sufficient length and at the same time, It is preferable to be formed so as to be guided to the end. Since an isentropic core is formed outside the nozzle 10, the ashing efficiency can be greatly increased.

On the other hand, when the back pressure at the rear end of the nozzle 10 is high, the peeling point is close to the nozzle neck 11 and the flow field has already been sufficiently grown. Therefore, the length of the third bulging portion 16 is reduced, It is preferable to expose the core to the outside of the nozzle 10.

On the other hand, the outer surface of the nozzle 10 is preferably wrapped by the heat insulating portion 18. The heat insulating portion 18 is composed of an external heat insulating tube and a heat insulating material filled therein. The heat insulating part 18 maintains the heat insulating property of the nozzle 10 to promote particle growth and provides an external wall for the nozzle 10 to withstand high pressure gas to provide mechanical strength. The nozzle 10 may be integrally formed to cover the entire side surface.

9 is a schematic view showing an access relationship between a nozzle for generating a fast particle beam and an object 1 according to an embodiment of the present invention.

Fig. 9 (a) corresponds to the positional relationship between the outlet face of the nozzle 10 and the object 1 in the general case, and Fig. 3 (b) corresponds to the positional relationship between the outlet face of the nozzle 10 and the nozzle 1 And the outlet face of the honeycomb structure is obliquely cut.

As shown in FIG. 9 (a), the nozzle 10 generally performs an ashing operation while being inclined at a predetermined angle. In this case, due to the nature of the cylindrical shape, the outlet of the nozzle 10 does not completely come close to the object 1, and the ashing efficiency is lowered.

9 (b), it is preferable that the outlet face of the nozzle 10 be provided in a shape obliquely cut so as to correspond to the working angle of the nozzle 10. It is preferable that the cut angle? ₄ of the cut shape in this way is in the range of 20 ° or more and less than 90 ° with respect to the nozzle axis 19.

Hereinabove, a nozzle for generating a fast particle beam according to an embodiment of the present invention has been described. Hereinafter, a dry peeling apparatus including the nozzle 10 will be described.

10 is a block diagram showing a main configuration of a dry peeling apparatus according to an embodiment of the present invention.

The dry peeling apparatus according to the present invention can be divided into a case where i) a carrier gas is mixed with a particle producing gas and ii) a case where only a particle producing gas is used.

First, in the case where i) a carrier gas is mixed with the particle generation gas, the gas storage portion including the particle generation gas storage portion 40 and the carrier gas storage portion 50 as shown in Fig. 1, the mixing chamber 30, a pressure regulator 20, and a nozzle 10.

And, when only ii) the particle generating gas is used, the carrier gas storing portion 50 and the mixing portion are not included.

When the particle generation gas and the carrier gas are used in combination, the particle generation gas storage part 40 and the carrier gas storage part 50 are connected to the mixing chamber 30. As described above, carbon dioxide is used as the particle generating gas, and nitrogen or helium is preferably used as the carrier gas. The mixing chamber 30 sufficiently mixes the particle generation gas and the carrier gas, and controls the mixing ratio. It is preferable that the mixing ratio is such that the volume ratio of the carrier gas accounts for 10% to 99% of the total volume of the mixed gas to form a carbon dioxide mixed gas.

The mixed gas mixed in the mixing chamber 30 flows into the pressure regulator 20. The pressure regulator 20 regulates the supply pressure of the mixed gas to the nozzle 10.

In the case where only the particle generation gas composed of carbon dioxide is used, the particle generation gas storage unit 40 is directly connected to the pressure regulator 20 without passing through the mixing chamber 30 to inject the generated generation gas into the pressure regulator 20 May be considered. Hereinafter, as a concept against the mixed gas, the particle generation gas in the case of using only the particle generation gas will be referred to as a pure particle generation gas.

Considering the size and the injection speed of the sublimation particles generated, the output pressure of the pressure regulator 20 is set to be 5 to 120 bar for the mixed gas, ii) 5 to 120 bar for the pure- 60 bar. ≪ / RTI >

The mixed gas or pure particle generation gas that has passed through the pressure regulator 20 is supplied to the inlet of the nozzle 10.

The mixed gas or the pure particle generation gas supplied to the inlet of the nozzle 10 sequentially passes through the orifice 12, the first expanding portion 14 and the second expanding portion 15 as described above, To the object (1). Since the detailed internal structure of the nozzle 10 has been described above, a duplicate description will be omitted.

Hereinafter, a high-speed particle beam generating step according to an embodiment of the present invention will be described.

The high-speed particle beam generating step according to an embodiment of the present invention corresponds to the generation of ultra-high-speed uniform nanoparticles by passing the particle generation gas made of carbon dioxide through the nozzle 10. Here, the particle generation gas may be mixed with the carrier gas and supplied to the nozzle 10 of the mixed gas, or may be supplied in the form of pure particle generation gas.

First, when supplied in the form of a mixed gas, the step of mixing includes the step of mixing the particle generation gas and the carrier gas to form a mixed gas, and the step of controlling the pressure of the mixed gas through the mixing step desirable.

Preferably, the carrier gas is made of nitrogen or helium, and the pressure of the mixed gas after the pressure regulating step is adjusted to 5 bar to 120 bar to be introduced into the nozzle 10.

After passing through the pressure regulating step, the particle generating gas is rapidly expanded while passing through the orifice 12 provided in the nozzle neck 11 of the nozzle 10, and nucleation is performed.

After passing through the nucleation step, nucleation is carried out while passing through the first expansion part 14 having an expansion angle (? ₁ ) of more than 0 ° and less than 30 ° continuing from the exit of the nozzle neck 11, Is generated.

After passing through the particle generating step, an average expansion angle (?) Of 10 to 45 degrees relative to the expansion angle? ₁ of the first expansion portion (14), which extends from the outlet of the first expansion portion (14) the particle acceleration step is performed in which the growth of the boundary layer is canceled while the injection speed of the sublimation particles is increased while passing through the second expanding part 15 having the second sublimation angle &thetas; ₂ .

Is increased by 10 ° to 45 ° relative to the average expansion angle (θ ₂ ) of the second expansion part (15) and extending from the outlet of the second expansion part (15) And a flow regulating step of forming the high speed core of sublimation particles outside the nozzle 10 while passing through the third expanding portion 16 having the expansion angle [theta] ₃ .

On the other hand, when only the pure particle generation gas is supplied, the pressure control step of adjusting the pressure of the particle generation gas is performed without going through the mixing step.

Here, it is preferable that the pressure of the particle generation gas that has undergone the pressure regulating step is adjusted to 5 bar or more and 60 bar or less, and is introduced into the nozzle 10.

The subsequent steps are the same as the nucleation step, particle generation step, particle acceleration step and flow control step described above.

The positional relationship used to describe the preferred embodiment of the present invention is described with reference to the accompanying drawings, and the positional relationship thereof may vary according to the embodiment.

It is also to be understood that, unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs will be. Further, unless explicitly defined in the present application, it should not be interpreted as an ideal or overly formal sense.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, You should see.

1: object
10: Nozzles
11: Nozzle neck
12: Orifice
13: Orifice block
14: first expanding part
15: second expanding portion
16: third expansion part
17: gas supply pipe
18:
19: Nozzle axis
20: Pressure regulator
30: Mixing chamber
40: Particle production gas storage part
50: Carrier gas reservoir
100: wafer
110: photoresist
120:
130: Pattern parent material
140: mask
θ ₁ , θ ₂ , θ ₃ : expansion angle
θ ₄ : Cutting angle

Claims (25)

A dry peeling method for ashing a photoresist,
And a spraying and peeling step of spraying sublimation particles onto the photoresist to peel off the photoresist,
Prior to the spraying and stripping steps,
Further comprising a high-speed particle beam generating step of generating the sublimation particles.
The method according to claim 1,
The photoresist is formed on the surface of the wafer,
Wherein the sublimation particles are sprayed onto the photoresist to peel off a predetermined surface of the photoresist from the wafer.
The method according to claim 1,
The photoresist is formed on the surface of the pattern portion formed on the wafer,
Wherein the sublimable particles are sprayed onto the photoresist, and the photoresist is peeled from the pattern portion.
The method according to claim 1,
The photoresist is formed on the surface of the pattern parent material formed on the wafer,
Wherein the sublimation particles are sprayed onto the photoresist, and the photoresist is peeled off from the pattern parent material.
The method according to claim 1,
The photoresist is formed on the surface of the pattern parent material formed on the wafer,
Wherein the sublimation particles are sprayed onto the photoresist to selectively peel off a predetermined surface of the photoresist from the pattern parent material.
6. The method of claim 5,
Wherein a mask is provided on the top of the photoresist to selectively peel off a predetermined surface of the photoresist from the pattern parent material.
delete 7. The method according to any one of claims 1 to 6,
Wherein the fast particle beam generating step comprises:
Wherein an average expansion angle of the second expanding portion is larger than an expansion angle of the first expanding portion when the particle generating gas is passed through a nozzle including the first expanding portion and the second expanding portion,
A nucleation step in which the particle generation gas is rapidly expanded while passing through an orifice provided in a nozzle neck of the nozzle to generate nucleation
A particle generating step in which nucleation is performed while passing through the first expanding part extending from the nozzle neck through the nucleation step to generate sublimation particles;
After passing through the particle generating step, passes through the second expanding portion extending from the outlet of the first expanding portion and having an average expansion angle larger than the expansion angle of the first expanding portion to cancel the growth of the boundary layer, Characterized in that it comprises a particle accelerating step in which the speed is increased.
9. The method of claim 8,
The particle generating gas is made of carbon dioxide,
Wherein an expansion angle of the first expanding portion has an expansion angle of more than 0 DEG and less than 30 DEG,
Wherein the expansion angle of the second expanding portion has an average expansion angle that is increased by 10 ° to 45 ° with respect to the expansion angle of the first expanding portion.
The method of claim 9, wherein
Wherein the fast particle beam generating step comprises:
Passing through the third expanding portion extending from the outlet of the second expanding portion and having an expansion angle of 10 to 45 degrees larger than the average expansion angle of the second expanding portion but having an expansion angle of less than 90 degrees after passing through the particle acceleration step, Further comprising a flow regulating step of forming a high speed core of the particles outside the nozzle.
delete A dry peeling apparatus for ashing a photoresist,
A nozzle for generating a fast particle beam of sublimation particles,
The nozzle
A nozzle for generating ultra-high-speed uniform nanoparticles by passing a particle generation gas composed of carbon dioxide,
And an expansion part having a cross-sectional area wider toward an outlet side of the nozzle,
Wherein the expanding portion comprises:
A first expanding portion and a second expanding portion,
And the average expansion angle of the second expanding portion is larger than the expansion angle of the first expanding portion.
13. The method of claim 12,
The nozzle
Further comprising an orifice provided at an inlet of the expansion portion to rapidly expand the particle generation gas.
14. The method of claim 13,
Wherein the connecting portion of the second expanding portion with the first expanding portion is formed to have the same expansion angle as the expansion angle of the outlet of the first expanding portion, the expansion angle increases toward the center portion of the second expanding portion, And the expansion angle is decreased as it goes toward the outlet side.
15. The method of claim 14,
Wherein the first expanding portion has an expansion angle greater than 0 DEG and less than 30 DEG,
Wherein the second expanding portion has an average expansion angle which is increased by 10 ° to 45 ° with respect to the expansion angle of the first expanding portion.
16. The method of claim 15,
The nozzle
And a third expanding portion connected to the outlet of the second expanding portion,
Wherein the third expanding portion has an expansion angle that is increased by 10 to 45 degrees with respect to an average expansion angle of the second expanding portion but less than a maximum of 90 degrees.
13. The method of claim 12,
The nozzle
Further comprising a compression section provided at an inlet side of the nozzle.
13. The method of claim 12,
Wherein the outlet of the bulging portion is obliquely cut with respect to the nozzle axis so that the nozzle can be close to the object.
A nozzle for generating a high-speed particle beam for dry exfoliation by ashing sublimated particles to ash the photoresist,
The nozzle
A nozzle for generating ultra-high-speed uniform nanoparticles by passing a particle generation gas composed of carbon dioxide,
And an expanding portion having a shape in which the cross-sectional area becomes wider toward the outlet side of the nozzle
Wherein the expanding portion comprises:
A first expanding portion and a second expanding portion,
Wherein an average expansion angle of the second expanding portion is larger than an expansion angle of the first expanding portion.
20. The method of claim 19,
Further comprising an orifice provided at an inlet of the expansion part for rapidly expanding the particle generation gas.
21. The method of claim 20,
Wherein the connecting portion of the second expanding portion with the first expanding portion is formed to have the same expansion angle as the expansion angle of the outlet of the first expanding portion, the expansion angle increases toward the center portion of the second expanding portion, And the inflation angle is decreased toward the outlet side of the nozzle.
22. The method of claim 21,
Wherein the first expanding portion has an expansion angle greater than 0 DEG and less than 30 DEG,
Wherein the second expanding portion has an average expansion angle that is increased by 10 ° to 45 ° with respect to an expansion angle of the first expanding portion.
23. The method of claim 22,
The nozzle
And a third expanding portion connected to the outlet of the second expanding portion,
Wherein the third expanding portion has an expansion angle that is increased by 10 to 45 degrees with respect to an average expansion angle of the second expanding portion, but has an expansion angle of less than 90 degrees at most.
20. The method of claim 19,
The nozzle
Further comprising a compression section provided at an inlet side of the nozzle.
20. The method of claim 19,
Wherein the outlet of the bulging portion is obliquely cut with respect to the nozzle axis so that the nozzle can be close to the object.

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