KR101416881B1 - Power BJT with base ballast resistor - Google Patents
Power BJT with base ballast resistor Download PDFInfo
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- KR101416881B1 KR101416881B1 KR1020130137927A KR20130137927A KR101416881B1 KR 101416881 B1 KR101416881 B1 KR 101416881B1 KR 1020130137927 A KR1020130137927 A KR 1020130137927A KR 20130137927 A KR20130137927 A KR 20130137927A KR 101416881 B1 KR101416881 B1 KR 101416881B1
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- base
- region
- bipolar transistor
- collector
- surface resistance
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 230000006641 stabilisation Effects 0.000 claims description 24
- 238000011105 stabilization Methods 0.000 claims description 24
- 239000010953 base metal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 15
- 230000000087 stabilizing effect Effects 0.000 description 7
- 229910015900 BF3 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Abstract
Description
The present invention relates to a power bipolar transistor having a base stabilization resistor, which improves the current driving capability and uniformly applies the potential between the base and the emitter, thereby preventing the occurrence of thermal runaway by directing the emitter current to one place. To a power bipolar transistor having a base stabilizing resistor.
Bipolar Junction Transistor (BJT) is superior to MOS transistor (MOS TR) in current performance, speed, and gain, And is widely used in RF IC design.
A bipolar transistor composed of an emitter, a base, and a collector can be divided into a vertical bipolar transistor and a horizontal bipolar transistor according to the direction of charge transfer from the emitter.
In a vertical bipolar transistor, charges emitted from the emitter move in a direction perpendicular to the surface of the semiconductor substrate and flow to the collector. The vertical bipolar transistor is composed of an emitter of the first conductivity type, a base of the second conductivity type surrounding the emitter, and a collector of the first conductivity type surrounding the base.
Here, the first conductivity type and the second conductivity type may be p-type and n-type, respectively, or vice versa, and are thus determined as a pnp transistor and an npn transistor, respectively.
Generally, the power bipolar transistor has a ballast resistance in series with the emitters to avoid thermal runaway due to local current increase of one of the emitter-base regions.
When the emitter resistance is used to secure the stability of the power bipolar transistor (SOA, Safe Operating Area), the emitter resistance is placed between the input terminal and the output terminal of the bipolar transistor, Since the voltage is partially consumed, the unit power bipolar transistor narrows the operating range of the Forward Active Region to reduce the current driving capability of the chip used for the power stage such as the LDO (Low Dropout) Regulator and DC-DC Converter .
This is because, if the potential difference between the collector and the emitter of the LDO regulator is large, all unit power bipolar transistors operate in a forward active region having a large base and collector current gain, If the applied potential difference between the collector and the emitter gradually decreases, part or all of the unit power bipolar transistor operates in a saturation region in which the current gain is small, and the current driving capability of the LDO is greatly reduced.
Therefore, in order to increase the potential between the collector and the emitter of the unit power bipolar transistor, the emitter resistance must be designed to have a small value as small as possible. Therefore, if the stable resistor used to secure the maximum operating stability (SOA) is changed from the emitter to the base, the voltage consumed due to the resistance between the input terminal and the output terminal of the LDO regulator can be minimized, And the chip's cross-sectional area can be reduced, thereby ensuring price competitiveness of the chip.
The present invention provides a base stabilization resistor in the base region, thereby avoiding a decrease in the voltage applied between the collector and the emitter due to the emitter stabilization resistance, thereby improving the current driving capability and reducing the cross sectional area of the chip.
In order to realize the base stabilization resistance, the emitter current is made uniform by adjusting the base stabilization resistance so that the potential difference between the base and the emitter is uniformly applied by varying the value of the base stabilization resistance according to the distance from the output terminal, And a base stabilization resistor for preventing a thermal runaway phenomenon from occurring due to the bias of the power transistor.
In addition, since the manufacturing process of the base stabilization resistor is the same as that of the base region, an additional manufacturing process for manufacturing the base stabilization resistor is not required.
According to an aspect of the present invention, there is provided a structure of a power bipolar transistor including a plurality of unit bipolar transistor cells connected in parallel, each of the unit bipolar transistor cells including a base stabilization resistor, And the resistor has a larger resistance value toward the output side.
The base stabilization resistor is formed of a sheet resistance, and the base surface resistance is formed in a space between the collector region and the base region by being joined to the base and being projected in a stepped shape.
The base surface resistance is characterized in that the pattern length and width are the same in the unit bipolar transistor and the position of the metal contact in the base surface resistance region is moved away from the uppermost base metal contact in the base region to increase the resistance value .
The base surface resistance is set such that the width of the surface resistance is the same in the unit bipolar transistor and the length of the surface resistance is made longer as the distance from the output side becomes longer.
The base surface resistances are configured such that the length of the surface resistances of the unit bipolar transistors is the same while the width of the surface resistors is narrower as the distance from the output side is closer to increase the resistance value.
The base stabilizing resistor is fabricated in the same layer through the same manufacturing process as the same material as the base region.
The base stabilizing resistor is characterized in that boron or BF2 is produced by a diffusion process after ion implantation.
The unit bipolar transistor is characterized in that a collector epilayer is stacked on the collector buried layer and a collector sink is connected to the collector buried layer.
The present invention can reduce the cross-sectional area of the entire power bipolar transistor by improving the current driving ability by increasing the collector current by avoiding reduction of the applied voltage between the collector and the emitter according to the emitter stabilizing resistance by providing the base stabilizing resistor in the base region There is an effect.
In addition, by varying the base resistance value according to the distance from the output terminal, the potential between the base and the emitter is uniformly applied to the emitter current, thereby preventing thermal runaway phenomenon and increasing the stable operation region It is effective.
Also, the manufacturing process of the base resistor is performed through the same manufacturing process as the base region, so that the manufacturing cost is not increased and the manufacturing time is not increased.
1 is a vertical cross-sectional view and equivalent circuit showing the structure of a unit bipolar transistor of a power bipolar transistor having a base stabilization resistor according to an embodiment of the present invention.
2 is a plan view showing the layout of four unit bipolar transistors.
FIG. 3 is a perspective view showing the layers of four unit bipolar transistors. FIG.
FIG. 4 is a perspective view of a layout of a metal of an input pad, an output pad, a collector metal, an emitter metal, a base metal, and a base surface resistance region of a power bipolar transistor having a base stabilization resistor according to an embodiment of the present invention.
FIG. 5 is a perspective view of a layout of the collector metal, the emitter metal, the base metal, and the base surface resistance region of FIG. 4, in which the metal is removed.
Fig. 6 is a plan view of Fig. 5. Fig.
7 is a plan view showing the structure of the base surface resistance according to the first embodiment.
8 is a perspective view showing the structure of the base surface resistance according to the first embodiment.
9 is a perspective view showing the structure of the base surface resistance according to the second embodiment.
10 is a perspective view showing the structure of the base surface resistance according to the third embodiment.
BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In order to facilitate a thorough understanding of the present invention, the same reference numerals are used for the same means regardless of the number of the drawings.
1 is a vertical sectional view and equivalent circuit showing the structure of a unit bipolar transistor 100 of a power bipolar transistor having a base stabilization resistor according to an embodiment of the present invention. And FIG. 3 is a perspective view showing each of four layers of four unit bipolar transistors.
1, a unit bipolar transistor 100 according to an embodiment of the present invention includes an
The unit bipolar transistor includes an n + type collector buried
The
The impurity concentration of the
2 and 3, the base region of the present invention is divided into a
The base
The base surface resistance can be made by changing the width and length of the surface resistors as the resistance value increases as the resistance width decreases and as the resistance value increases as the resistance length increases. The base resistance of the unit bipolar transistor of the present invention is not designed to have the same value but the resistance value of the unit bipolar transistor is different and the value of the stability resistance of the unit bipolar transistor is shifted from the
The emitter (10) region is a region where a high concentration n + type impurity is implanted and has a larger impurity concentration than the base region. Ion implantation of n-type impurities having a very high concentration in the base region. The current flowing through the base region flows out to the external electrode through the emitter region. The amplifying action of the current is proportional to the ratio of the impurity concentration sum of the base and emitter regions. If the sum of the emitter impurity concentration is larger than the sum of the impurity concentration of the base region by 100 times or more, the ratio of the current flowing into the emitter through the base region in the collector region becomes 100 times Or more. Here, n-type impurities such as arsenic (As), phosphorus (P), and antimony (Sb) are applied to the emitter region.
The
A chemical method is performed in which a hole is drilled in an insulator covering an emitter, a base, and a collector region, a photoresist is applied to make such a hole, and then an exposure is performed to etch the hole, and a conductive material A method of forming
The metal region is for connection with an external electrode or another bipolar transistor electrode when the bipolar transistor region is made, and the metal is made of metal such as ordinary aluminum, copper, gold, or silver. The circuit is constructed assuming that the resistance is 0 when designing the circuit. However, in areas where a large current flows, such as a power bipolar transistor, a circuit must be designed including a fine resistor because a minute resistance is affected. In the present invention, the
Figs. 4 to 6 relate to the appearance of a power bipolar transistor having a base stabilization resistor according to an embodiment of the present invention.
FIG. 4 is a cross-sectional view of an
A power bipolar transistor having a base stabilization resistor according to the present invention is mainly constituted by an integrated circuit chip structure in which a plurality of unit bipolar transistors are connected in parallel between an
The
Similarly, the
The
The
5 is a perspective view of a layout in which the
The
On the other hand, since a unit bipolar transistor has a weak point that a chip easily breaks when a thermal runaway occurs due to a current hogging phenomenon, the base stable Careful design of the resistor circuit can extend the lifetime of the chip.
Metal is used to connect the emitter of the unit bipolar transistor to the output terminal (Output PAD) (4). However, due to the fact that the metal also contains minute resistances, some voltage is consumed due to the metal resistance under the condition of the large current exceeding the number [A], and therefore, the unit is located far away from the output terminal as compared with the unit bipolar transistor located near the output terminal. The increase in metal resistance of the bipolar transistor results in a small value between the base and the emitter, and a current tends to flow to the unit bipolar transistor located near the output terminal.
In order to avoid such a phenomenon, it is necessary to design the voltage applied between the base 20 and the
In other words, the base metal resistance component and the emitter metal resistance component have a fixed value when the structure is determined, so that the controllable base surface resistance is to be adjusted. Unit Bipolar transistor Connect a large value base surface resistor to the unit bipolar transistor near the output terminal which shows a relatively small resistance value when summing up the fine resistance of the metal from the emitter to the output terminal, And a small-value base surface resistor is connected to the unit bipolar transistor having a large resistance value. As a result, the potential difference between the base and the emitter of the unit bipolar transistor is controlled uniformly. As a result, even when a large current flows into the resistor, the voltage drop is evenly increased, The emitter current of the bipolar transistor can be made to flow uniformly.
The resistance of the base surface resistance is increased by decreasing the resistance width, and by increasing the resistance length, the resistance value is increased. Therefore, the width and length of the surface resistance may be changed to vary the resistance value in order to fabricate the base surface resistance.
The embodiment of the present invention for changing the base surface resistance is as follows.
First, the length and width of the base surface resistance region are made the same, and the distance between the
As shown in Figs. 7 and 8, the base surface
Secondly, the width of the base surface resistance is the same and the length of the surface resistance is made larger as the direction from the
The length of the base
Third, the length of the base surface resistance is the same and the resistance width is made narrower from the
10, the width of the base
It is to be understood that the terms "comprises", "comprising", or "having" as used in the foregoing description mean that a component can be implied unless specifically stated to the contrary, But should be construed as further including other elements. All terms, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. Commonly used terms, such as predefined terms, should be interpreted to be consistent with the contextual meanings of the related art, and are not to be construed as ideal or overly formal, unless expressly defined to the contrary.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It will be understood that the present invention can be changed.
3.
10.
14. Emitter Metal
20.
22.
24.
30.
34.
37. Collector buried
Claims (8)
Wherein the base stabilization resistor comprises a base surface resistance, the base surface resistance is formed in a space between the collector region and the base region,
The base stabilization resistor is fabricated in the same layer through the same manufacturing process as the base material,
Wherein the base stabilization resistor has a larger resistance value as it approaches the output side.
Wherein the base surface resistance is such that the pattern length and the width are the same in the unit bipolar transistor and the position of the metal contact in the base surface resistance region is distanced from the uppermost base metal contact in the base surface region toward the output side to increase the resistance value Power bipolar transistor.
Wherein a resistance value of the base surface resistor is increased by increasing the length of the surface resistance of the unit bipolar transistor while the width of the surface resistance is the same and closer to the output side.
Wherein the base surface resistance is set such that the length of the surface resistance in the unit bipolar transistor is the same while the width of the surface resistance is closer to the output side, thereby increasing the resistance value.
Wherein the base stabilization resistor is fabricated by a diffusion process after boron or BF2 ion implantation.
Wherein the unit bipolar transistor has a collector epilayer stacked on top of the collector buried layer and a collector sink connected to the collector buried layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130137927A KR101416881B1 (en) | 2013-11-13 | 2013-11-13 | Power BJT with base ballast resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130137927A KR101416881B1 (en) | 2013-11-13 | 2013-11-13 | Power BJT with base ballast resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR101416881B1 true KR101416881B1 (en) | 2014-07-08 |
Family
ID=51741591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130137927A KR101416881B1 (en) | 2013-11-13 | 2013-11-13 | Power BJT with base ballast resistor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101416881B1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0182061B1 (en) * | 1995-04-07 | 1999-03-20 | 기다오까 다까시 | Bipolar transistor, amplifier using this bipolar transistor and integrated circuit |
| KR100192543B1 (en) * | 1991-01-07 | 1999-07-01 | 구본준 | Manufacturing method of bipolar transistor |
| KR20010106037A (en) * | 2000-05-20 | 2001-11-29 | 구자홍 | Device for adjusting height of a display appliance |
| KR100749979B1 (en) * | 1999-11-29 | 2007-08-16 | 페어차일드 세미컨덕터 코포레이션 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices |
-
2013
- 2013-11-13 KR KR1020130137927A patent/KR101416881B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100192543B1 (en) * | 1991-01-07 | 1999-07-01 | 구본준 | Manufacturing method of bipolar transistor |
| KR0182061B1 (en) * | 1995-04-07 | 1999-03-20 | 기다오까 다까시 | Bipolar transistor, amplifier using this bipolar transistor and integrated circuit |
| KR100749979B1 (en) * | 1999-11-29 | 2007-08-16 | 페어차일드 세미컨덕터 코포레이션 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices |
| KR20010106037A (en) * | 2000-05-20 | 2001-11-29 | 구자홍 | Device for adjusting height of a display appliance |
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