KR101410943B1 - Sintered igzo sputtering target having high zinc content and method for forming the same - Google Patents
Sintered igzo sputtering target having high zinc content and method for forming the same Download PDFInfo
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Abstract
Description
본 발명은 고 아연 분율의 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체 및 이를 제조하는 방법에 관한 것이다. 보다 구체적으로는, 산화인듐 및 산화갈륨의 함량과 산화아연의 함량의 비율이 1:5 이상인 산화인듐-산화갈륨-산화아연 화합물의 고밀도 소결체 타겟 및 그 제조방법에 관한 것이다.The present invention relates to a sintered body of an indium-gallium oxide-zinc oxide mixed compound having a high zinc fraction and a method for producing the same. More specifically, the present invention relates to a high-density sintered target of indium oxide-gallium oxide-zinc oxide compound having a ratio of a content of indium oxide and a content of zinc oxide to a content of zinc oxide of 1: 5 or more, and a production method thereof.
투명 도전성 소재는 전기 전도도를 갖는 동시에 가시광선을 투과하는 소재를 말하며, 구체적으로는 빛의 파장이 400~700nm 영역대의 가시광선을 80% 이상 투과하며 전기 전도도가 비저항으로 10-3Ωcm이하이거나 면저항이 103Ω/□ 이하인 소재를 의미한다.A transparent conductive material is a material that has electrical conductivity and transmits visible light. More specifically, the light transmits at least 80% of visible light in a wavelength range of 400 to 700 nm, has an electrical conductivity of 10-3? Cm or less, Means a material having a resistance of 10 3 Ω / □ or less.
이러한 투명 도전성 소재를 이용한 박막은 전기 전도도가 높고 가시광선 투과율이 높아 액정 디스플레이(LCD), 플라즈마 디스플레이(PDP), 유기발광 디스플레이(OLED), 터치 패널 등에 널리 사용되고 있으며, 전자파 흡수 및 차폐, 발열체, 태양전지, 정전기 방지 등에도 광범위하게 사용되고 있다.Thin films using such transparent conductive materials are widely used for liquid crystal displays (LCDs), plasma displays (PDP), organic light emitting displays (OLED), and touch panels because of their high electrical conductivity and high visible light transmittance. Solar cells, and anti-static.
투명도전성 타겟으로 가장 일반적으로 사용되고 있는 재료로는 인듐 산화물(In2O3)에 5~10 wt%의 주석 산화물(SnO2)이 혼합된 ITO와 인듐 산화물에 5~10 wt%의 아연 산화물(ZnO)이 혼합된 IZO 가 있다.The most commonly used materials for the transparent conductive target are indium oxide (ITO) in which 5 to 10 wt% of tin oxide (SnO 2 ) is mixed with indium oxide (In 2 O 3 ) and 5 to 10 wt% of zinc oxide ZnO) is mixed with IZO.
인듐 산화물(In2O3)의 경우, Zn 광산 등의 부산물로 생산되므로 수급이 불안정하고 고가라는 문제점이 있으므로, 범용의 저가 소재 개발이 필요하다. ITO 대체 소재에 대한 연구는 In2O3 절감 소재, In2O3 무첨가 소재, 유기 전도재, 탄소나노튜브를 이용한 연구 등으로 나누어 진행되고 있다. 이와 관련하여, 일부 2성분계 조성(IZO, ZAO)에서 가시적인 개발 실적을 보였고, 근래 들어 2성분계 이상의 다성분계 투명 전극재(예를 들면, IGZO)에 대한 연구 개발로 개발 경향이 변화하고 있다. In the case of indium oxide (In 2 O 3 ), since it is produced as a by-product such as Zn mine, there is a problem that the supply and demand is unstable and the cost is high. Research on alternative materials for ITO has been divided into In 2 O 3 saving materials, In 2 O 3 free materials, organic conductive materials, and researches using carbon nanotubes. In this connection, development of some binary compositions (IZO, ZAO) has been observed, and recently development trend has been changing due to research and development of multi-component transparent electrode materials (for example, IGZO) of two or more components.
최근 산화인듐-산화갈륨-산화아연 혼합 화합물(IGZO)을 이용한 투명전극 타겟 제조에 관한 연구가 활발히 진행되고 있다. IGZO 투명전극은 그 특성이 우수한 것으로 알려져 있고, In의 함량을 감소시킬 수 있는 가능성이 있다. 이러한 IGZO 투명전극은 한국공개특허 제2010-0075193호에 개시되어 있다.Recently, studies on the production of a transparent electrode target using an indium-gallium oxide-zinc oxide mixed compound (IGZO) have been actively conducted. The IGZO transparent electrode is known to have excellent properties, and there is a possibility that the content of In can be reduced. Such an IGZO transparent electrode is disclosed in Korean Patent Publication No. 2010-0075193.
하지만, 산화인듐-산화갈륨-산화아연 혼합 화합물(IGZO)의 경우 In2O3+Ga2O3:ZnO의 비율이 1:5 이상이 될 경우, 소결밀도가 낮아져 투명전극의 스퍼터링 타겟으로 사용하기 어려운 문제점이 있다. However, when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 5 or more in the case of the indium oxide-gallium oxide-zinc oxide mixed compound (IGZO), the sintered density is lowered and used as the sputtering target of the transparent electrode There is a problem that is difficult to do.
본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위해 안출된 것으로서, 아연의 함량이 높으면서도 고밀도의 산화인듐-산화갈륨-산화아연 혼합 화합물(IGZO) 소결체 및 이를 제조하는 방법을 제공한다. Disclosure of the Invention The present invention has been made to solve the problems of the prior art as described above, and provides a high-density indium oxide-gallium oxide-zinc oxide mixed compound (IGZO) sintered body having a high zinc content and a method of manufacturing the same.
본 발명의 일 실시예에 따른 산화인듐-산화갈륨-산화아연 혼합 화합물(IGZO)의 소결체의 제조방법은, 산화인듐(In2O3) 분말, 산화갈륨(Ga2O3) 분말, 및 산화아연(ZnO)이 1:1:10의 비율로 배합된 혼합 분말을 제작하는 단계; 상기 혼합 분말을 열처리하여 InGaZn5O8 결정구조를 가지는 혼합 화합물을 제작하는 단계; 상기 InGaZn5O8 혼합 화합물을 분쇄하여 미분화하는 단계; InGaZn5O8 혼합 화합물 분말에 산화아연(ZnO) 분말을 추가하는 단계; 산화아연(ZnO) 분말이 추가된 혼합 분말을 원료로 성형체를 제작하는 단계; 및 상기 성형체를 소결하는 단계를 포함한다.A method of manufacturing a sintered body of an indium oxide-gallium oxide-zinc oxide mixed compound (IGZO) according to an embodiment of the present invention includes the steps of: preparing an indium oxide (In 2 O 3 ) powder, a gallium oxide (Ga 2 O 3 ) powder, Zinc oxide (ZnO) in a ratio of 1: 1: 10; Heat-treating the mixed powder to prepare a mixed compound having an InGaZn 5 O 8 crystal structure; Pulverizing the InGaZn 5 O 8 mixed compound to pulverize it; Adding a zinc oxide (ZnO) powder to an InGaZn 5 O 8 mixed compound powder; Preparing a molded body of a mixed powder to which zinc oxide (ZnO) powder is added as a raw material; And sintering the molded body.
바람직하게는, 상기 혼합물을 제작하는 단계에서 산화인듐(In2O3) 분말, 산화갈륨(Ga2O3) 분말, 및 산화아연(ZnO) 분말은 평균입도가 0.1㎛ 이하이다.Preferably, the average particle size of the indium oxide (In 2 O 3 ) powder, the gallium oxide (Ga 2 O 3 ) powder and the zinc oxide (ZnO) powder is 0.1 μm or less in the step of preparing the mixture.
바람직하게는, In2O3+Ga2O3:ZnO의 비율이 1:5 이상이 되도록 상기 산화아연(ZnO) 분말을 추가하는 단계에서 산화아연(ZnO) 분말의 첨가량이 결정된다.Preferably, the addition amount of the zinc oxide (ZnO) powder is determined in the step of adding the zinc oxide (ZnO) powder so that the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 5 or more.
바람직하게는, 상기 열처리는 1000℃ 이하에서 혼합 분말을 하소하는 단계를 포함한다.Preferably, the heat treatment includes calcining the mixed powder at 1000 DEG C or lower.
바람직하게는, 상기 InGaZn5O8 혼합 화합물을 분쇄하여 미분화하는 단계에서 상기 혼합 화합물은 평균입도가 0.2㎛ 이하로 분쇄된다.Preferably, in the step of pulverizing the InGaZn 5 O 8 mixed compound to pulverize the mixed compound, the mixed compound is pulverized to an average particle size of 0.2 탆 or less.
바람직하게는, 상기 소결체는 스퍼터링 타겟이다.Preferably, the sintered body is a sputtering target.
본 발명의 일 실시예에 따른 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체는 산화인듐(In2O3), 산화갈륨(Ga2O3), 및 산화아연(ZnO)을 주성분으로 하며, In2O3+Ga2O3:ZnO의 비율이 1:n (여기서, n > 5)이고, 소결밀도가 90% 이상이다. The sintered body of the indium oxide-gallium oxide-zinc oxide mixed compound according to an embodiment of the present invention includes indium oxide (In 2 O 3 ), gallium oxide (Ga 2 O 3 ), and zinc oxide (ZnO) The ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: n (where n> 5) and the sintered density is 90% or more.
본 발명에 따르면, In2O3+Ga2O3:ZnO의 비율이 1:5 이상인 조성에서도 소결 밀도가 90% 이상 되는 고밀도 IGZO 스퍼터링 타겟을 얻을 수 있다.According to the present invention, a high-density IGZO sputtering target having a sintered density of 90% or more can be obtained even when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 5 or more.
본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나, 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성요소를 지칭한다.BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, it is to be understood that the present invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It is intended that the disclosure of the present invention be limited only by the terms of the appended claims. Like reference numerals refer to like elements throughout the specification.
IGZO화합물의 경우, In2O3+Ga2O3:ZnO 의 비율에 따라 다양한 형태의 결정 구조를 가진다. 예를 들어, In2O3+Ga2O3:ZnO 의 비율이 1:2일 경우, InGaZn2O5의 결정구조를 가지며, 그 비율이 1:3 일 경우에는, InGaZn3O6의 구조를 가진다. 이런 식으로 In2O3+Ga2O3:ZnO 의 비율이 1:5 이하일 경우에는 ZnO의 비율에 따라 결정구조 상의 Zn 화학량이 결정된다. In the case of the IGZO compound, it has various crystal structures depending on the ratio of In 2 O 3 + Ga 2 O 3 : ZnO. For example, when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 2, it has a crystal structure of InGaZn 2 O 5. When the ratio is 1: 3, the structure of InGaZn 3 O 6 . In this way, when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 5 or less, the Zn stoichiometry on the crystal structure is determined by the ratio of ZnO.
하지만, In2O3+Ga2O3:ZnO 의 비율이 1:5 이상이 될 경우에는, 전술한 바와 같은 화학구조의 경향을 따르지 못하고, 1:5의 비율의 결정구조인 InGaZn5O8 을 가지게 된다. 이는 InGaZnnO2n -2의 결정구조의 n값이 5 이상인 경우에는 화합물의 결정구조가 매우 불안정하여 안정한 상인 InGaZn5O8의 구조로 변하는 것으로 알려져 있다. However, when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 5 or more, the crystal structure of InGaZn 5 O 8 . It is known that when the n value of the crystal structure of InGaZn n O 2n- 2 is 5 or more, the crystal structure of the compound is very unstable and changes to the structure of InGaZn 5 O 8 which is a stable phase.
In2O3+Ga2O3:ZnO 의 비율이 1:5 이상일 때 결정구조가 InGaZn5O8이 된다면, 잉여의 ZnO 가 결정에 포함되지 못하고 잔류하게 된다. 그리고 이러한 잔류 ZnO는 하소 과정에서 결정립 성장을 일으켜 거대 결정립의 ZnO가 되고, 이후 소결 과정에서 소결을 방해하여 소결밀도를 낮추는 요인이 된다. If the crystal structure is InGaZn 5 O 8 when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 5 or more, surplus ZnO is not included in the crystal and remains. And this residual ZnO causes grain growth in the calcination process to become ZnO of large grain size, which in turn interferes with sintering in the sintering process, thereby lowering the sintering density.
본 발명의 발명자들은 이러한 잉여 ZnO에 의해 발생하는 문제를 해결하기 위해 실험을 거듭한 결과, In2O3+Ga2O3:ZnO 의 비율이 1:5인 분말을 하소하여 InGaZn5O8의 결정구조를 가지는 분말을 먼저 제조한 후, 목적하는 In2O3+Ga2O3:ZnO 의 비율에 따라 평균입도 0.5㎛ 이하인 ZnO 분말을 앞서 제조된 InGaZn5O8 결정구조의 분말에 첨가 및 혼합하고 이 혼합 분말을 소결하면 아연의 분율이 높은 고밀도의 타겟 제조가 가능하다는 것을 확인하였다.
The inventors of the present invention have repeatedly conducted experiments to solve the problem caused by the excess ZnO. As a result, the powder having a ratio of In 2 O 3 + Ga 2 O 3 : ZnO of 1: 5 was calcined to form InGaZn 5 O 8 A ZnO powder having an average particle size of 0.5 탆 or less was added to the powder of the above-prepared InGaZn 5 O 8 crystal structure in accordance with the desired ratio of In 2 O 3 + Ga 2 O 3 : ZnO, and And sintering the mixed powder, it was confirmed that it is possible to manufacture a high-density target having a high zinc fraction.
<실시예 1>≪ Example 1 >
다음과 같은 과정에 의해 실시예 1에 따른 IGZO 타겟 소결체를 제조하였다.The IGZO target sintered body according to Example 1 was produced by the following procedure.
(분말 혼합) (Powder mixing)
평균입도 0.1㎛ 이하의 미세한 산화인듐(In2O3) 분말, 산화갈륨(Ga2O3) 분말, 그리고 산화아연(ZnO) 분말을 1:1:10의 비율로 배합하고, 이를 볼밀링 (ball milling) 방법을 이용하여 혼합한 다음 건조하였다. Fine indium oxide (In 2 O 3 ) powder, gallium oxide (Ga 2 O 3 ) powder and zinc oxide (ZnO) powder having an average particle size of 0.1 μm or less were mixed at a ratio of 1: 1: ball milling method and then dried.
(하소)(calcination)
건조시킨 혼합 분말을 1000℃에서 3 시간 동안 열처리하였다.The dried mixed powder was heat-treated at 1000 캜 for 3 hours.
(분쇄)(smash)
하소 공정을 거친 분말을 다시 볼밀링하여 평균입도가 0.2㎛ 이하인 혼합 분말을 제조하였다.The calcined powder was ball milled again to prepare a mixed powder having an average particle size of 0.2 탆 or less.
(성형 및 소결)(Molding and sintering)
상기 혼합 분말을 금형에 넣고 프레스하여 성형한 다음, 대기 중에서 1400℃에서 6 시간 동안 소결하였다. 소결체의 밀도에 대한 분석 결과는 표 1에 있다.
The mixed powder was molded into a mold, pressed and sintered in the air at 1400 ° C for 6 hours. The results of the analysis of the density of the sintered bodies are shown in Table 1.
<실시예 2>≪ Example 2 >
다음과 같은 과정에 의해 실시예 2에 따른 IGZO 타겟 소결체를 제조하였다.The IGZO target sintered body according to Example 2 was produced by the following procedure.
(분말 혼합) (Powder mixing)
평균입도 0.1㎛ 이하의 미세한 산화인듐(In2O3) 분말, 산화갈륨(Ga2O3) 분말, 그리고 산화아연(ZnO) 분말을 1:1:10의 비율로 배합하고, 이를 볼밀링 (ball milling) 방법을 이용하여 혼합한 다음 건조하였다. Fine indium oxide (In 2 O 3 ) powder, gallium oxide (Ga 2 O 3 ) powder and zinc oxide (ZnO) powder having an average particle size of 0.1 μm or less were mixed at a ratio of 1: 1: ball milling method and then dried.
(하소) (calcination)
건조시킨 혼합 분말을 1000℃에서 3 시간 동안 열처리하였다.The dried mixed powder was heat-treated at 1000 캜 for 3 hours.
(분쇄)(smash)
하소 공정을 거친 분말을 다시 볼밀링하여 평균입도가 0.2㎛ 이하인 혼합 분말을 제조하였다.The calcined powder was ball milled again to prepare a mixed powder having an average particle size of 0.2 탆 or less.
(추가 ZnO의 배합)(Addition of ZnO)
In2O3+Ga2O3:ZnO 의 비율이 1:6이 되도록 상기 혼합 분말에 ZnO 분말을 추가로 혼합하였다.ZnO powder was further added to the mixed powder so that the ratio of In 2 O 3 + Ga 2 O 3 : ZnO was 1: 6.
(성형 및 소결) (Molding and sintering)
혼합 분말을 금형에 넣고 프레스하여 성형한 다음, 대기 중에서 1400℃에서 6 시간 동안 소결하였다. 소결체의 밀도에 대한 분석 결과는 표 1에 있다.
The mixed powder was molded into a mold, pressed and sintered in the air at 1400 캜 for 6 hours. The results of the analysis of the density of the sintered bodies are shown in Table 1.
<실시예 3~6>≪ Examples 3 to 6 >
추가 ZnO의 배합을 제외한 나머지 과정은 전술한 실시예 2와 동일하다. 실시예 3~6에서는 In2O3+Ga2O3:ZnO 의 비율이 표 1에 기재된 바와 같은 값을 가질 수 있도록 추가로 배합될 ZnO의 양을 선택하였다. The rest of the procedure except for the addition of additional ZnO is the same as in the second embodiment. In Examples 3 to 6, the amount of ZnO to be added is selected so that the ratio of In 2 O 3 + Ga 2 O 3 : ZnO has a value as shown in Table 1.
구분
division
소결온도(℃)
Sintering temperature (℃)
소결시간(hr)
Sintering time (hr)
소결체 밀도
Density of sintered body
상대밀도
Relative density
<비교예><Comparative Example>
본 발명의 효과를 입증하기 위해 아래와 같은 과정으로 비교예의 IGZO 타겟 소결체를 제조하였다.In order to demonstrate the effect of the present invention, the IGZO target sintered body of the comparative example was produced by the following procedure.
(분말 혼합) (Powder mixing)
평균입도 0.1㎛ 이하의 미세한 산화인듐(In2O3) 분말, 산화갈륨(Ga2O3) 분말, 그리고 산화아연(ZnO) 분말을 표 2에 기재된 비율로 배합하고, 이를 볼밀링 (ball milling) 방법을 이용하여 혼합한 다음 건조하였다. Fine indium oxide (In 2 O 3 ) powders, gallium oxide (Ga 2 O 3 ) powders and zinc oxide (ZnO) powders having an average particle size of not more than 0.1 μm were mixed in the ratios shown in Table 2, ) Method and then dried.
(하소)(calcination)
건조시킨 혼합 분말을 1000℃에서 3 시간 동안 열처리하였다.The dried mixed powder was heat-treated at 1000 캜 for 3 hours.
(분쇄)(smash)
하소 공정을 거친 분말을 다시 볼밀링하여 평균입도가 0.2㎛ 이하인 혼합 분말을 제조하였다.The calcined powder was ball milled again to prepare a mixed powder having an average particle size of 0.2 탆 or less.
(성형 및 소결)(Molding and sintering)
상기 혼합 분말을 금형에 넣고 프레스하여 성형한 다음, 대기 중에서 1400℃에서 6 시간 동안 소결하였다. 소결체의 밀도에 대한 분석 결과는 표 2에 있다.The mixed powder was molded into a mold, pressed and sintered in the air at 1400 ° C for 6 hours. The results of the analysis of the density of the sintered bodies are shown in Table 2.
구분
division
소결온도(℃)
Sintering temperature (℃)
소결시간(hr)
Sintering time (hr)
소결체 밀도
Density of sintered body
상대밀도
Relative density
표 2에 나타난 바와 같이 비교예에 따른 IGZO 소결체는 In2O3+Ga2O3:ZnO의 비율이 1:5 이상인 경우 소결밀도가 90% 이하로 떨어지는 것을 확인할 수 있었다. 이에 반해, 본 발명의 실시예에 따른 IGZO 소결체는 표 1에 나타난 바와 같이 In2O3+Ga2O3:ZnO의 비율이 1:5 이상인 경우에도 소결밀도가 90% 이상 유지되는 것을 확인할 수 있다.As shown in Table 2, it was confirmed that the sintered density of the IGZO sintered body according to the comparative example fell below 90% when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO was 1: 5 or more. On the contrary, the IGZO sintered body according to the embodiment of the present invention shows that the sintered density is maintained at 90% or more even when the ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: 5 or more as shown in Table 1 have.
이상 첨부된 도면을 참조하여 본 발명의 실시예를 설명하였지만, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자는 본 발명이 그 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다.While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand.
Claims (9)
상기 혼합 분말을 열처리하여 InGaZn5O8 결정구조를 가지는 혼합 화합물을 제작하는 단계;
상기 InGaZn5O8 혼합 화합물을 분쇄하여 미분화하는 단계;
InGaZn5O8 혼합 화합물 분말에 산화아연(ZnO) 분말을 추가하는 단계;
산화아연(ZnO) 분말이 추가된 혼합 분말을 원료로 성형체를 제작하는 단계; 및
상기 성형체를 소결하는 단계
를 포함하는, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체의 제조방법.Preparing a mixed powder in which indium oxide (In 2 O 3 ) powder, gallium oxide (Ga 2 O 3 ) powder, and zinc oxide (ZnO) are mixed at a molar ratio of 1: 1: 10;
Heat-treating the mixed powder to prepare a mixed compound having an InGaZn 5 O 8 crystal structure;
Pulverizing the InGaZn 5 O 8 mixed compound to pulverize it;
Adding a zinc oxide (ZnO) powder to an InGaZn 5 O 8 mixed compound powder;
Preparing a molded body of a mixed powder to which zinc oxide (ZnO) powder is added as a raw material; And
Sintering the shaped body
Wherein the sintered body of the indium oxide-gallium oxide-zinc oxide mixed compound is a mixture of the indium oxide and the gallium oxide.
상기 혼합 분말을 제작하는 단계에서 산화인듐(In2O3) 분말, 산화갈륨(Ga2O3) 분말, 및 산화아연(ZnO) 분말은 평균입도가 0.1㎛ 이하인, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체의 제조방법.The method according to claim 1,
In the step of preparing the mixed powder, the indium oxide (In 2 O 3 ) powder, the gallium oxide powder (Ga 2 O 3 ) powder and the zinc oxide (ZnO) powder have a mean particle size of 0.1 μm or less, Zinc complex compound.
In2O3+Ga2O3:ZnO의 몰비가 1:5 이상이 되도록, 상기 산화아연(ZnO) 분말을 추가하는 단계에서 산화아연(ZnO) 분말의 첨가량이 결정되는, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체의 제조방법.The method according to claim 1,
(ZnO) powder is added in the step of adding the zinc oxide (ZnO) powder so that the molar ratio of In 2 O 3 + Ga 2 O 3 : ZnO is 1: A method for producing a sintered body of a zinc oxide mixed compound.
상기 열처리는 1000℃ 이하에서 혼합 분말을 하소하는 단계를 포함하는, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체의 제조방법.The method according to claim 1,
Wherein the heat treatment includes a step of calcining the mixed powder at 1000 DEG C or lower.
상기 InGaZn5O8 혼합 화합물을 분쇄하여 미분화하는 단계에서 상기 혼합 화합물은 평균입도가 0.2㎛ 이하로 분쇄되는, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체의 제조방법.The method according to claim 1,
Wherein the mixed compound is pulverized to an average particle size of 0.2 탆 or less in the step of pulverizing the InGaZn 5 O 8 mixed compound to pulverize the powder.
상기 소결체는 90% 이상의 소결밀도를 가지는, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체의 제조방법.The method according to claim 1,
Wherein the sintered body has a sintered density of 90% or more.
상기 소결체는 스퍼터링 타겟인, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체의 제조방법.The method according to claim 1,
Wherein the sintered body is a sputtering target, wherein the sintered body is a sputtering target.
상기 소결체는 스퍼터링 타겟이 되는, 산화인듐-산화갈륨-산화아연 혼합 화합물의 소결체.9. The method of claim 8,
Wherein the sintered body is a sputtering target, and a sintered body of the indium oxide-gallium oxide-zinc oxide mixed compound.
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