KR101404134B1 - Method of fabricating plasma generating apparatus and method of plasma processing of substrate - Google Patents

Abstract

The present invention provides a method of manufacturing a plasma display panel, the method comprising: providing a conductive body including a plurality of capillary portions, in order to suppress a phenomenon that the plasma is transferred to an arc and generate a plasma stably near atmospheric pressure; And forming an insulating shield layer on an outer circumferential surface of the body so as to expose at least a portion of a bottom surface portion of the plurality of capillary portions.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a rotating electrode for a plasma generator,

The present invention relates to a plasma generating apparatus, and more particularly, to a method of manufacturing a rotating electrode for a plasma generating apparatus.

Generally, plasma is divided into high-temperature and low-temperature plasma depending on the temperature, which is a near-neutrally gaseous state in which ions or electrons are rarely present in a neutral ionizing gas through which electrons pass, that is, The reactivity is very strong. BACKGROUND ART [0002] Plasma-based substrate processing techniques have been widely used in various industrial fields, such as semiconductor devices, solar cells, and displays.

For example, low-temperature plasma can be used to synthesize various materials or materials such as metals, semiconductors, polymers, nylons, plastics, paper, fibers, and ozone, or to change surface properties to improve bonding strength and improve various characteristics including dyeing and printing ability. And thin film synthesis of semiconductors, metals and ceramics, cleaning and so on.

However, because the low-temperature plasma is usually generated in a low-pressure vacuum vessel, an expensive apparatus for vacuum maintenance is required, and thus there is a limitation in that it is used for processing a large-diameter object to be treated. To overcome this, there is an effort to generate plasma near atmospheric pressure. However, in the apparatus for generating a plasma near the atmospheric pressure, a phenomenon occurs in which the plasma is transferred to the arc, and when the size of the processed material is large, the treatment is difficult.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a rotary electrode for a plasma generating apparatus that can be used near atmospheric pressure to solve various problems including the above problems. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: providing a conductive body including a plurality of capillary portions; And forming an insulating shield layer on the outer circumferential surface of the body so as to expose at least a portion of the bottom surface portion of the plurality of capillary portions.

The step of forming the insulating shield layer may include: forming a dielectric layer to cover the outer circumferential surface of the body; And selectively removing the dielectric layer on at least a portion of the bottom portion of the plurality of capillary portions.

The conductive body may be formed of a conductive material including aluminum, and the forming of the dielectric layer may include forming an alumina layer on the conductive body by anodic oxidation or thin film deposition.

The conductive body may be formed of a conductive material other than aluminum, and the forming of the dielectric layer may include forming an aluminum layer by a thin film deposition method so as to cover the outer circumferential surface of the body; And anodizing the aluminum layer to an alumina layer by anodic oxidation.

The conductive body may be formed of a conductive material except for aluminum, and the forming of the dielectric layer may include forming an alumina layer by thin film deposition to cover the outer circumferential surface of the body.

The step of forming the dielectric layer may be performed using an anodic oxidation method or a thin film deposition method.

The step of selectively removing the dielectric layer may be performed using a diamond cutting method or a laser cutting method.

The step of forming the insulating shield layer may include: forming a mask layer on the bottom surface of the plurality of capillary portions; And selectively forming a dielectric layer on the outer circumferential surface of the body exposed from the mask layer.

The dielectric layer can be formed using anodic oxidation.

The manufacturing method may further include removing the mask layer after forming the dielectric layer.

Wherein providing the conductive body including the plurality of capillary portions comprises: providing a cylindrical center body comprising a first conductive material; Forming an outer circumferential layer including a second conductive material on an outer circumferential surface of the cylindrical center body; And forming a plurality of capillary portions by removing a portion of the outer circumferential layer such that the cylindrical center body is exposed so that the concave and convex shape appears.

In addition, the step of forming the insulating shield layer may include forming at least one of the first conductive material and the second conductive material on at least a bottom surface portion of the capillary portion, And forming a dielectric layer on the outer circumferential layer in which the concave-convex shape is formed to expose a part of the dielectric layer. Herein, the first conductive material includes iron, the second conductive material includes aluminum, and the dielectric layer may include aluminum oxide (Al ₂ O ₃ ), and the dielectric layer may be formed by anodic oxidation of aluminum Can be formed.

The conductive body may be formed of a conductive material including aluminum, and the forming of the dielectric layer may include forming an alumina layer on the conductive body by anodic oxidation or thin film deposition.

The conductive body may be formed of a conductive material other than aluminum, and the forming of the dielectric layer may include forming an aluminum layer by a thin film deposition method so as to cover the outer circumferential surface of the body; And anodizing the aluminum layer to an alumina layer by anodic oxidation.

The conductive body may be formed of a conductive material except for aluminum, and the forming of the dielectric layer may include forming an alumina layer by thin film deposition to cover the outer circumferential surface of the body.

The plurality of capillary portions may be formed in a stripe pattern, and the stripe pattern may be formed to extend in a rotational axis direction of the body. Furthermore, the stripe patterns may be formed so as to be regularly arranged at regular intervals.

The shielding layer may include at least one of alumina (Al ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silica (SiO ₂ ), magnesium oxide (MgO), and Teflon have.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a plurality of capillary portions on an outer peripheral surface of a body having a cylindrical shape; Forming a dielectric layer to cover the outer circumferential surface of the body; And selectively removing a portion of the dielectric layer to form an insulating shielding layer that exposes at least a bottom portion of the plurality of capillary portions.

The manufacturing method may further include forming aluminum (Al) or an aluminum alloy layer so as to cover an outer circumferential surface of the body before forming the dielectric layer.

The dielectric layer may be formed by anodizing the aluminum or aluminum alloy layer.

According to the plasma generating apparatus and the method of manufacturing the same of the present invention as described above, the rotating electrode for the plasma generating apparatus, which is capable of generating the plasma stably near the atmospheric pressure by suppressing the phenomenon that the plasma is transferred to the arc, . Of course, the scope of the present invention is not limited by these effects.

1 is a schematic cross-sectional view illustrating a plasma generating apparatus according to an embodiment of the present invention.
2 is a schematic perspective view showing a rotary electrode manufactured according to an embodiment of the present invention.
3 is a schematic partial enlarged view of the rotating electrode shown in Fig.
4 is a flowchart illustrating a method of manufacturing a rotating electrode according to an embodiment of the present invention.
5 is a cross-sectional view sequentially illustrating a manufacturing process of a rotary electrode according to an embodiment of the present invention.
6 is a flowchart illustrating a method of manufacturing a rotating electrode according to another embodiment of the present invention.
7 is a cross-sectional view sequentially illustrating a manufacturing process of a rotating electrode according to another embodiment of the present invention.
8 is a flowchart showing a method of manufacturing a rotating electrode according to another embodiment of the present invention.
9 is a cross-sectional view sequentially showing a manufacturing process of a rotary electrode according to another embodiment of the present invention.
10 is a schematic partial enlarged view of a rotary electrode manufactured according to another embodiment of the present invention.
11 shows the plasma emission intensity according to the pressure in comparison with the comparative examples and the experimental examples.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, Is provided to fully inform the user. Also, for convenience of explanation, the components may be exaggerated or reduced in size.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes on the orthogonal coordinate system, and can be interpreted in a broad sense including the three axes. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

1 is a schematic cross-sectional view showing a plasma generating apparatus 100 including a rotating electrode manufactured according to an embodiment of the present invention. 2 is a schematic perspective view showing the arrangement of a rotating electrode and a substrate in the plasma generating apparatus 100 of FIG.

Referring to Figures 1 and 2, a chamber 110 for defining a reaction space is provided. An injection valve 150 for introducing the reaction gas into the chamber 110 is disposed at one side of the chamber 110 and a discharge valve 155 for discharging the reaction gas in the chamber 110 to the outside is disposed at the other side . The shape of the chamber 110 is illustratively shown and does not limit the scope of this embodiment. For example, the chamber 110 may be provided in a polygonal shape as shown in Fig. 1, or may be provided in a circular or dome shape.

The injection valve 150 is connected to a gas feeder (not shown), and a gas flowmeter for regulating the flow rate can be connected between the injection valve 150 and the gas feeder. Optionally, the drain valve 155 may be connected to a pump (not shown) to facilitate evacuation of reactive gas or other air in the chamber 110. However, when the chamber 110 operates at atmospheric pressure, such a pump may be omitted. The shape and arrangement of the injection valve 150 and the discharge valve 155 may be suitably adjusted and do not limit the scope of this embodiment.

The substrate 130 may be provided in the chamber 110 to be positioned on the supporting plate 120. The supporting plate 120 may include a heating unit for heating the substrate 130. For example, the supporting plate 120 may be provided as a hot plate with a built-in heating unit. The substrate 130 may be variously provided. For example, the substrate 130 may be provided as a semiconductor wafer such as silicon for the production of semiconductor devices, or may be provided as a glass substrate or a plastic substrate for the production of display devices or solar cells.

The rotating electrode 140 may be provided on the supporting plate 120 so as to face the substrate 130. For example, the rotary electrode 140 may be provided to include a rotation shaft 145 at a central portion thereof so as to be rotatable. For example, the rotating electrode 140 may be provided in various shapes, for example, a cylindrical shape. As another example, the rotary electrode 140 may have a polygonal shape having a symmetrical structure about the rotation axis 145. [

The rotary shaft 145 may be connected to a power unit (not shown) to receive a driving force. The rotary electrode 140 may be connected to the power supply unit 147 to receive electric power and the rotary shaft 145 may be connected to the power supply unit 147, for example. The power supply 147 may be a DC or AC power supply. For example, the power supply unit 147 can supply an AC power having a frequency band ranging from 50 Hz to 10 GHz. Correspondingly, the supporting plate 120 may be grounded or connected to a bias voltage portion.

The rotary electrode 140 is rotated about the rotation axis 145 and can extend in the x axis direction. The supporting plate 120 can be moved in a direction perpendicular to the rotation shaft 145, for example, in the y-axis direction. Accordingly, the substrate 130 can be relatively scanned with respect to the rotating electrode 140. As another example, the supporting plate 120 may be fixed, and the rotating electrode 140 may be moved in the y-axis direction simultaneously with the rotation.

The capillary portions 143 of the body 141 of the rotary electrode 140 may be formed in a stripe pattern shape as shown in FIG. For example, such a stripe pattern can be stretched in parallel with the rotation shaft 145, and can be regularly arranged at regular intervals. This stripe pattern direction may be advantageous in adjusting the uniformity of the plasma processing in that it is perpendicular to the direction of movement of the substrate 130. However, in a modified example of this embodiment, the stripe pattern may be arranged so as to extend in the circumferential direction of the rotary electrode 140. Further, in another modified example of this embodiment, the capillary portions 143 may be arranged in various patterns, for example spiral patterns.

Plasma processing can be performed on the substrate 130 using the plasma generating apparatus 100 described above. First, the substrate 130 may be placed on the supporting plate 120. Subsequently, reactive gas may be introduced into the chamber 110 through the inlet valve 150 to supply the reactive gas onto the substrate 130. Subsequently, a plasma may be generated between the supporting plate 120 and the rotating electrode 140 to induce a chemical reaction of the reaction gas.

 In order to control the generation of the plasma 160, the interval between the rotating electrode 140 and the substrate 130 needs to be appropriately adjusted, and may be adjusted, for example, in the range of 0.1 to 1 mm. On the other hand, an inert gas may be further introduced into the chamber 110 together with the reaction gas for the atmosphere control or dilution in the chamber 110. According to the above-described plasma generating apparatus, plasma generation can be controlled, and plasma can be maintained stably near atmospheric pressure. Such a plasma may be used to deposit a thin film on the substrate 130 or to etch the thin film.

3 is a schematic partial enlarged view of the rotating electrode 140 shown in Fig.

Referring to FIG. 3, the rotating electrode 140 may include a conductive body 141 connected to the rotating shaft 145.

The conductive body 141 includes a plurality of capillaries 143 on the outer peripheral surface thereof. The capillaries 143 have a space defined by a bottom surface portion 143a and a side wall portion 143b, which may have a trench shape. The shape of the space is illustrated by way of example and does not limit the scope of this embodiment. For example, the space defined by the bottom surface portion 143a and the side wall portion 143b may have an elongated shape of capillary shape. Furthermore, the cross section parallel to the bottom surface portion 143a and / or the side wall portion 143b may have a circular, elliptical or polygonal shape. If the space defined by the bottom surface portion 143a and the side wall portion 143b is referred to as a concave portion, the convex portion around the concave portion can be understood as the convex portions 142. [

In this embodiment, the convex portions 142 are shown integrally with the body 141. For example, the capillary portions 143 can be formed by etching the outer circumferential surface of the body 141 in a concavo-convex shape, so that the concave portion and the convex portion can form the concavo-convex shape. In a modified example of this embodiment, the convex portions 142 may be formed in a separate pattern on the body 141. [ In this case, the convex portions 142 and the body 141 may be formed of the same material or another material. The shapes of the convex portions 142 formed on the body 141 can be various shapes. For example, a triangular, square, or curved shape.

The insulating shielding layer 144 may be disposed on the outer circumferential surface of the body 141 to expose at least the bottom surface portion 143a of the capillary portions 143. [ For example, the shielding layer 144 may expose the bottom surface 143a of the capillary portions 143, and may cover other portions of the outer surface of the other body 141. For example, the side surfaces 143b of the capillary portion 143 and the upper surface portions 142c of the convex portions 142 may be covered with the shielding layer 144. The shielding layer 144 exposes the bottom portion 143a of the capillary portions 143 and the lower portion of the side wall portion 143b and the upper surface portions of the side wall portion 143b and the upper surface portions of the convex portions 142 (142c). For example, the shielding layer 144 has different dielectric such as alumina (Al ₂ O _3), silicon carbide (SiC), silicon nitride (Si ₃ N _4), quartz (SiO _2), magnesium (MgO) and Teflon oxide ( PTFE). ≪ / RTI >

According to this structure, since the portions other than the bottom surface portion 143a of the capillary portions 143 are surrounded by the shielding layer 144, the generation of plasma by the potential concentration causes the capillary portions 143 It can be generated in a radiated form. That is, when an electric field is applied to the rotary electrode 140, the electric field is accumulated on the bottom surface 143a of the capillary portions 143, so that the intensity of the electric field is increased and the effect of capillary discharge is obtained have.

In order to control the generation of the plasma, the width and height of the capillary portions 143 and the like can be adjusted. For example, on / off control of the plasma discharge may be performed by adjusting the number of revolutions of the rotating electrode 140, the shape of the capillary portions 143 and / or the capillary portions 143 Can be controlled. According to this structure, plasma generation can be controlled to suppress arcing and the like, so that the plasma can be stably maintained near atmospheric pressure.

For example, the width of the bottom surface 143a of the capillary portions 143 is in the range of 100 to 10 mm, and the aspect ratio of the capillary portions 143 can be in the range of about 0.1 to 200 have. The aspect ratio of the capillary portions 143 indicates the ratio of the height of the side portion 143b to the width of the bottom portion 143a. On the other hand, the thickness of the shielding layer 144 may be in the range of 10 탆 to 10 mm. If the thickness of the shielding layer 144 is 10 μm or less, a sufficient discharge effect is not obtained and an arc is easily generated. When the thickness is 10 mm or more, the discharge effect is good, but the discharge start and sustain voltage may increase.

According to the above-described plasma generating apparatus, plasma generation can be controlled, and plasma can be maintained stably near atmospheric pressure. Such a plasma may be used to deposit a thin film on the substrate 130 or to etch the thin film.

FIG. 4 is a flowchart showing a method of manufacturing a rotating electrode according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view sequentially showing a manufacturing process of a rotating electrode according to an embodiment of the present invention.

4 and 5, a conductive body 141 including a plurality of capillary portions 143 is provided (S11). The body 141 shown in FIG. 5 (a) may be provided with at least one of various conductors such as a conductive metal, a conductive ceramic, a conductive carbon body, and a conductive polymer. The body 141 may have a concavo-convex shape on its outer circumference. For example, a part of the body 141 may be removed so that the bottom 143a of the capillary 143 is exposed. Here, the conductive metal refers to a metal through which a current that can be used as an electrode flows, and may include aluminum, an aluminum alloy, or the like.

Next, as shown in FIG. 5B, an insulating dielectric layer 144a is formed to cover the outer circumferential surface of the body 141 (S12). Dielectric layer 144a may comprise various dielectric layers including oxides. For example, at least one of alumina (Al ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), quartz (SiO ₂ ), magnesium oxide (MgO) and Teflon (PTFE).

The dielectric layer 144a may be formed by various methods such as anodizing, spraying, or sputtering. For example, in the case of the body 141 formed of aluminum and aluminum alloy, which are conductive metals, an alumina (Al ₂ O ₃ ) dielectric layer 144a can be formed by anodic oxidation. As another example, a dielectric layer 144a of quartz (SiO ₂ ) and magnesium oxide (MgO) may be formed using a thin film deposition method. The thin film deposition method may include a physical vapor deposition (PVD) method or a chemical vapor deposition (CVD) method.

Alternatively, an alumina (Al ₂ O ₃ ) dielectric layer can be formed even in the case of materials other than aluminum. Aluminum or an aluminum alloy may be deposited on the outer circumferential surface of the conductive body 141 by using a thin film deposition method and then the aluminum or aluminum alloy may be oxidized by anodic oxidation to form the dielectric layer 144a.

For example, the body 141 shown in FIG. 5A may be formed so that the bottom surface 143a of the capillary portions 143 is formed by directly bending the cylindrical structure of the conductive material except for aluminum . A dielectric layer made of aluminum can be deposited on the outer circumferential surface of the body 141 made of conductive material other than aluminum by the physical vapor deposition (PVD) method or the chemical vapor deposition (CVD) method. Subsequently, an anodic oxidation such as an anodizing method is applied to the dielectric layer made of aluminum to generate a phase change, and an alumina (Al ₂ O ₃ ) dielectric layer 144a can be formed. On the other hand, in the modified embodiment, the dielectric layer 144a made of alumina (Al ₂ O ₃ ) is formed on the outer circumferential surface of the body 141 made of a conductive material other than aluminum by physical vapor deposition (PVD) Or may be directly deposited by a chemical vapor deposition (CVD) method.

Subsequently, as shown in FIG. 5C, the dielectric layer 144a on at least the bottom surface of the capillary portions 143 is selectively removed to form the insulating shield layer 144 (S13). At least the bottom surface portion 143a of the capillary portion 143 may be selectively removed so that the bottom surface portion 143a of the plurality of capillary portions 143 is exposed on the outer circumferential surface of the body 141, The shielding layer 144 can be formed.

For example, the dielectric layer 144a can be removed to expose the entire bottom surface 143a of the capillary portions 143 so that the shielding layer 144 can be removed from the side walls 143 of the capillary portions 143, The upper surface portions 142b of the convex portions 142 and the upper surface portions 142c of the convex portions 142. As another example, a portion of the dielectric layer 144a on the bottom surface 143a of the capillary portions 143 may be removed to form the shield layer 144 to expose at least a portion of the bottom surface portion 143a of the capillary portion 143, May be formed.

As a method of removing the dielectric layer 144a to expose the bottom surface 143a of the capillary portions 143, for example, a diamond cutting method or a laser cutting method may be used. Various methods can be used as long as the pillar portions 143 are not damaged. For example, wet etching or plasma etching may be performed after an appropriate masking operation to selectively remove the dielectric layer 144a.

On the other hand, in the modified example of this embodiment, after the dielectric layer 144a is formed as shown in FIG. 5B, a conductor (not shown) is formed on the bottom surface portion 143a of the capillary portions 143 Or may be formed as a layer. In this case, the shielding layer may be the remaining portion of the dielectric layer 144a exposed by the conductor.

FIG. 6 is a flowchart showing a method of manufacturing a rotating electrode according to another embodiment of the present invention, and FIG. 7 is a sectional view sequentially showing a manufacturing process of a rotating electrode according to another embodiment of the present invention. The rotating electrode manufacturing method according to this embodiment is a modification of some processes in the rotating electrode manufacturing method of FIGS. 4 and 5, and therefore duplicate description is omitted in the two embodiments.

6 and 7, a conductive body 141 including a plurality of capillary portions 143 is provided (S21). The providing step S21 of the body 141 can be referred to the description of FIG.

Next, a mask layer 170 is formed on the bottom surface portion 143a of the capillary portions 143 (S22). For example, the mask layer 170 may be formed of a material having an etch selectivity with the dielectric layer 144c formed by anodic oxidation, while preventing anodic oxidation of the body 141. For example, the mask layer 170 may be formed of a material such as resist, glass, polyimide, or the like.

The mask layer 170 may be formed by various methods. A liquid or a sol-gel-like insulating material is dropped on the capillary portions 143 while the body 141 is rotated so that only the insulating material remains on the bottom portion 143a of the capillary portions 143, It is possible to form the mask layer 170 so that the insulating material on the convex portions 142 of the insulating layer 142 can be blown away by the centrifugal force. As another example, after a planarized insulating material is filled to fill the space of the capillary portions 143, the insulating material is etched by blanket etching so that the insulating material remains only on the bottom surface portion 143a in the capillary portions 143, 170 may be formed. For example, when a spin-on glass (SOG) -based insulator is applied on the body 141, it is possible to form a planarized insulator substantially filling the space of the capillary portions 143, The mask layer 170 can be formed by etching.

Next, the dielectric layer 144c may be selectively formed on the outer circumferential surface of the body 141 exposed from the mask layer 170 (S23). Substantially, the dielectric layer 144c is formed to expose the bottom surface portion 143a of the capillary portions 143, so that the dielectric layer 144c can be a shielding layer.

For example, the dielectric layer 144c can be selectively formed by oxidizing the outer circumferential surface of the body 141 except the portion where the mask layer 170 is formed on the bottom surface portion 143a of the capillary portions using anodic oxidation. have. At this time, since the mask layer 170 covers the bottom surface portion 143a of the capillary portions 143, anodic oxidation is prevented on the bottom surface portion 143a of the capillary portions 143, so that the dielectric layer 144c is formed .

On the other hand, when the surface of the body 141 is not made of aluminum, an aluminum (Al ₂ O ₃ ) dielectric layer can be formed by anodic oxidation after aluminum and aluminum alloy are deposited on the surface of the body 141 .

For example, the body 141 shown in FIG. 7A can be formed so that the bottom surface 143a of the capillary portions 143 is formed by directly bending the cylindrical structure of the conductive material except for aluminum . A mask layer 170 is formed on the bottom surface portion 143a of the capillary portion 143 among the conductive bodies 141 made of aluminum other than aluminum. The mask layer 170 may be formed of a material having an etch selectivity with the dielectric layer 144c formed by anodic oxidation while preventing anodic oxidation of the body 141. [ After forming the mask layer 170, a dielectric layer made of aluminum selectively on the outer circumferential surface of the conductive body 141 other than aluminum exposed from the mask layer 170 is subjected to a physical vapor deposition (PVD) method or chemical vapor deposition (CVD) method. Subsequently, an anodic oxidation such as an anodizing method is applied to the dielectric layer made of aluminum to generate a phase change, and an alumina (Al ₂ O ₃ ) dielectric layer 144c can be formed. On the other hand, consisting of the variant embodiments, without performing the anodic oxidation, optionally, alumina (Al ₂ O ₃₎ on the outer peripheral surface of the conductive material other than the aluminum body 141 exposed from the mask layer 170, a dielectric layer (144c ) May be directly deposited by a physical vapor deposition (PVD) method or a chemical vapor deposition (CVD) method. At this time, since the mask layer 170 covers the bottom surface portion 143a of the capillary portions 143, anodic oxidation is prevented on the bottom surface portion 143a of the capillary portions 143, so that the dielectric layer 144c is formed .

Then, the mask layer 170 is removed (S24). For example, removal of the mask layer 170 may employ wet etching or plasma etching.

FIG. 8 is a flowchart showing a method of manufacturing a rotating electrode according to another embodiment of the present invention, FIG. 9 is a sectional view sequentially showing a manufacturing process of a rotating electrode according to another embodiment of the present invention, Is a schematic partial enlarged view of a rotary electrode manufactured according to another embodiment of the present invention.

8 to 10, a step S31 of providing a cylindrical center body 141 including a first conductive material to provide a conductive body 141 including a plurality of capillary portions 143, A step S32 of forming an outer circumferential layer 142a containing a second conductive material on the outer circumferential surface of the cylindrical center body 141 and a step S32 of forming a part of the outer circumferential layer 142a such that the cylindrical center body 141 is exposed (S33) of forming a plurality of capillary portions 143 may be performed in order.

4 to 7, since the convex portions 142 are formed by etching a part of the body 141, the body 141 and the convex portions 142 are made of the same material Thereby forming an integral body. On the other hand, in the embodiment described with reference to Figs. 8 and 9, the convex portions 142 are not formed by partially etching the cylindrical center body 141, but are formed separately on the outer peripheral surface of the cylindrical center body 141 The convex portions 142 and the cylindrical center body 141 do not need to be made of the same material and do not form one body, since a part of the outer circumferential layer 142a is removed.

A method of forming the outer circumferential layer 142a on the outer circumferential surface of the cylindrical center body 141 in the step S32 of forming the outer circumferential layer 142a containing the second conductive material on the outer circumferential surface of the cylindrical center body 141 is a physical A vapor deposition method, a chemical vapor deposition method, an atomic layer deposition method, and the like. Alternatively, the outer peripheral layer 142a may be formed on the outer peripheral surface of the cylindrical center body 141 by a plating method such as an electrolytic plating method, an electroless plating method, or the like. Or a method of forming the outer circumferential layer 142a on the outer circumferential surface of the cylindrical center body 141 may include a spray coating method or a hot dipping method.

A part of the outer circumferential layer 142a is removed in a step S33 in which a plurality of capillary portions 143 are formed by removing a part of the outer circumferential layer 142a such that the cylindrical center body 141 is exposed so that the concave- For example, a diamond cutting method, a laser cutting method, or the like can be used. The capillary portions 143 have a space defined by a bottom portion 143a and a side wall portion 143b, which may have a trench shape. The shape of the space is illustrated by way of example and does not limit the scope of this embodiment. For example, the space defined by the bottom surface portion 143a and the side wall portion 143b may have an elongated shape of capillary shape. Furthermore, the cross section parallel to the bottom surface portion 143a and / or the side wall portion 143b may have a circular, elliptical or polygonal shape. If the space defined by the bottom surface portion 143a and the side wall portion 143b is referred to as a concave portion, the convex portion around the concave portion can be understood as the convex portions 142. [

Subsequently, the step of forming the insulating shield layer 144d (S34) includes the step of forming the dielectric layer 144d (see FIG. 4) on the outer peripheral layer 142a in which the concavo-convex shape is formed to expose at least a portion of the bottom surface portion 143a of the capillary portions 143 ). ≪ / RTI > The inventors have found that the dielectric layer 144d is formed on the surface of the convex portions 142 in consideration of the fact that the material constituting the cylindrical central body 141 including the first conductive material and the convex portions 142 including the second conductive material are different. The insulating shield layer 144d is simply formed using a process in which the dielectric layer 144d can be selectively formed only on the surfaces 142c and 143b.

A method of selectively forming the dielectric layer 144d only on the surfaces 142c and 143b of the convex portions 142 without forming the dielectric layer 144d on the bottom surface portion 143a of the capillary portions 143, For example, it may include a method of selectively oxidizing only the second conductive material among the first conductive material and the second conductive material under specific conditions. For example, when the first conductive material constituting the cylindrical center body 141 includes iron and the second conductive material constituting the convex portions 142 includes aluminum, the convex portions 142 ), the surface (142c, 143b) optionally, aluminum oxide (Al ₂ O ₃₎ only can be formed in a dielectric layer (144d) comprises a.

As another example of the method of selectively forming the dielectric layer 144d only on the surfaces 142c and 143b of the convex portions 142 without forming the dielectric layer 144d on the bottom surface portion 143a of the capillary portions 143 , And a wetting method using a difference in wettability. For example, a solution containing a dielectric material having relatively low wettability with respect to the first conductive material constituting the cylindrical central body 141 and having a relatively high wettability with the second conductive material constituting the convex portions 142 The dielectric layer 144d can be selectively formed only on the surfaces 142c and 143b of the convex portions 142. In this case,

Another example of a method of selectively forming the dielectric layer 144d only on the surfaces 142c and 143b of the convex portions 142 without forming the dielectric layer 144d on the bottom surface portion 143a of the capillary portions 143 A vapor deposition method using a difference in covalent bond is possible. For example, it is possible to use a precursor which has relatively low covalent bonding force with the first conductive material constituting the cylindrical center body 141 and relatively high covalent bonding strength with the second conductive material constituting the convex portions 142, In the case of vapor deposition, the dielectric layer 144d can be selectively formed only on the surfaces 142c and 143b of the convex portions 142.

It is not necessary to perform a process of forming a mask layer or etching a part of the dielectric layer before and after the step of forming the dielectric layer to form the insulating shield layer 144d. Therefore, since the insulating shielding layer 144d can be effectively formed while reducing the number of process steps, an advantageous effect of reducing the manufacturing cost can be expected.

The method of manufacturing an electrode for a plasma generating apparatus described above relates to a method of manufacturing a rotating electrode as an example, but the technical idea of the present invention is not limited to a rotating electrode. It is apparent that the technical idea of the present invention can be applied to a method of manufacturing a conductive electrode including capillary portions, and can also be applied to a plate-like electrode including capillary portions, for example.

11 shows the plasma emission intensity according to the pressure in comparison with the comparative examples and the experimental examples.

In Comparative Example 1, the rotating electrode was formed in a flat cylindrical structure having no irregularities. In Comparative Example 2, the rotating electrode had a concavo-convex structure as shown in Fig. 1, but the shield layer was formed so as to cover the entire outer circumferential surface of the concavo-convex structure. On the other hand, in the experimental example, the rotating electrode has a concave-convex structure as shown in FIG. 3, and a shielding layer is formed to expose the bottom of the capillary portion.

In the comparative examples and the experimental examples, the supporting plate was made of a copper material and maintained at room temperature. The gap between the substrate and the rotary electrode was adjusted to 0.4 mm, and the discharge valve was opened to discharge the chamber pressure to 2.5 ㅧ 10 ^-2, and then the discharge valve was closed. Next, the injection valve was opened, and hydrogen and helium gas were introduced into the chamber to change the pressure. The flow rate of hydrogen gas was about 10 sccm and the flow rate of helium gas was about 10 slm.

The rotating electrode was rotated at 1000 rpm and power of 150 MHz was applied at 200 W through the power supply unit. OES (Optical Emission Spectroscopy) was installed at a position where the plasma can be observed in the chamber, and the intensity of light was measured by various wavelength ranges generated in the plasma to measure the plasma intensity.

Referring to FIG. 11, in the experimental example, the plasma intensity was about 9 times higher than that of the flat rotating electrode having no concavities and convexities in Comparative Example 1 at a pressure of 300 Torr. Further, in the case of the comparative examples near the atmospheric pressure of about 500 Torr, it was hard to obtain the plasma, but it can be seen that the experimental example still maintains a considerable degree of plasma intensity. It can be seen from this that the plasma apparatus using the rotating electrode according to the embodiments of the present invention can be widely used not only at low pressure but also at atmospheric pressure.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

100: plasma generator 110: chamber
120: supporting plate 130: substrate
140: rotating electrode 141: body
142: convex portion 143: capillary portion
144: shielding layer 145:
147: power supply unit 150: inflow valve
155: exhaust valve 160: plasma
170: mask layer

Claims (23)

Providing a conductive body comprising a plurality of capillary portions; And
Forming an insulating shield layer on the outer circumferential surface of the body to expose at least a portion of the bottom surface of the plurality of capillary portions;
Lt; / RTI >
Wherein providing the conductive body including the plurality of capillary portions comprises:
Providing a cylindrical core comprising a first conductive material;
Forming an outer circumferential layer including a second conductive material on an outer circumferential surface of the cylindrical center body; And
And forming a plurality of capillary portions by removing a portion of the outer peripheral layer such that the cylindrical center body is exposed so that the concave and convex shape is formed. The method of claim 1, wherein forming the insulating shield layer comprises:
Forming a dielectric layer to cover the outer circumferential surface of the body; And
And selectively removing the dielectric layer on at least a portion of the bottom surface portion of the plurality of capillary portions. 3. The method of claim 2, wherein forming the dielectric layer comprises:
Wherein the method is carried out using anodic oxidation or thin film deposition. 3. The method of claim 2,
Wherein the conductive body is made of a conductive material including aluminum,
Wherein the forming of the dielectric layer includes forming an alumina layer on the conductive body by anodizing or thin film deposition. 3. The method of claim 2,
Wherein the conductive body is made of a conductive material except for aluminum,
The forming of the dielectric layer may include forming an aluminum layer by a thin film deposition method so as to cover the outer circumferential surface of the body; And phase-transforming the aluminum layer into an alumina layer by anodic oxidation. 3. The method of claim 2,
Wherein the conductive body is made of a conductive material except for aluminum,
Wherein the forming of the dielectric layer includes forming an alumina layer by a thin film deposition method so as to cover the outer circumferential surface of the body. 3. The method of claim 2, wherein selectively removing the dielectric layer comprises:
Diamond cutting method or laser cutting method is used for the production of the rotating electrode for a plasma generating apparatus. The method of claim 1, wherein forming the insulating shield layer comprises:
Forming a mask layer on the bottom surface of the plurality of capillary portions; And
And selectively forming a dielectric layer on an outer circumferential surface of the body exposed from the mask layer. The method of manufacturing a rotary electrode for a plasma generator according to claim 8, wherein the dielectric layer is formed using an anodic oxidation method. 9. The method of claim 8,
Wherein the conductive body is made of a conductive material including aluminum,
Wherein the forming of the dielectric layer includes forming an alumina layer on the conductive body by anodizing or thin film deposition. 9. The method of claim 8,
Wherein the conductive body is made of a conductive material except for aluminum,
The forming of the dielectric layer may include forming an aluminum layer by a thin film deposition method so as to cover the outer circumferential surface of the body; And phase-transforming the aluminum layer into an alumina layer by anodic oxidation. 9. The method of claim 8,
Wherein the conductive body is made of a conductive material except for aluminum,
Wherein the forming of the dielectric layer includes forming an alumina layer by a thin film deposition method so as to cover the outer circumferential surface of the body. 9. The method of claim 8, further comprising, after forming the dielectric layer,
Further comprising the step of removing the mask layer. ≪ RTI ID = 0.0 > 11. < / RTI > delete The method of claim 1, wherein forming the plurality of capillary portions comprises:
And removing a part of the outer circumferential layer to expose the cylindrical center body by using a diamond cutting method or a laser cutting method. The method of claim 1, wherein forming the insulating shield layer comprises:
The outer circumferential layer having a concavoconvex shape to expose at least a part of the bottom surface of the capillary portion under a condition that a dielectric layer can be selectively formed only on the second conductive material among the first conductive material and the second conductive material, And forming a dielectric layer on the dielectric layer. The method of claim 16, wherein the first conductive material comprises iron, the second conductive material comprises aluminum, and the dielectric layer comprises aluminum oxide (Al ₂ O ₃ ). Gt; The method of manufacturing a rotary electrode for a plasma generator according to claim 17, wherein the dielectric layer is formed using anodic oxidation of aluminum. The method as claimed in claim 1, wherein the plurality of capillary portions are formed in a stripe pattern, and the stripe pattern is formed to extend in a direction of a rotational axis of the body. The method of manufacturing a rotary electrode for a plasma generator according to claim 19, wherein the stripe patterns are formed so as to be regularly arranged at regular intervals. The method of claim 1, wherein the shielding layer comprises at least one of alumina (Al ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silica (SiO ₂ ), magnesium oxide (MgO), and Teflon Wherein the method comprises the steps of: delete delete

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