KR101396699B1 - Display device and method of fabricating the same - Google Patents

Abstract

A display device and a manufacturing method thereof are disclosed. The display device includes a film formed integrally with a wiring and a wiring formed on the substrate, and a film including a test terminal branching from the wiring and a contact hole exposing a part of the test terminal. The manufacturing method of the display device includes forming a test terminal on the substrate, the test terminal being branched from the wiring and the wiring, and forming the film including the contact hole exposing a part of the test terminal. The electrical characteristics of the wiring can be measured by connecting the measuring device to the test terminal, and the test terminal is formed by branching from the wiring, so that the performance of the wiring is not deteriorated.

Test terminals, resistance measurement, data wiring, electrical resistance, capacitance,

Description

TECHNICAL FIELD [0001] The present invention relates to a display device and a method of manufacturing the same,

1 is a plan view of a display device according to a first embodiment of the present invention.

Fig. 2 is a cross-sectional view taken along the line I-I 'in Fig. 1. Fig.

3A to 3C are cross-sectional views illustrating a process according to a method of manufacturing a display device according to a second embodiment of the present invention.

4 is a plan view of a display device according to a third embodiment of the present invention.

5 is a cross-sectional view taken along line II-II 'in FIG.

6A to 6C are cross-sectional views illustrating steps of a method of manufacturing a display device according to a fourth embodiment of the present invention.

7 is a plan view of a display device according to a fifth embodiment of the present invention.

8 is a cross-sectional view taken along line III-III 'in FIG.

9A to 9C are cross-sectional views illustrating a process according to a sixth embodiment of the method of manufacturing a display device according to the present invention.

DESCRIPTION OF THE RELATED ART [0002]

110: substrate 120: gate wiring

130: common wiring 160: data wiring

180: pixel electrode 190: test terminal

The present invention relates to a display device.

As the information society develops, the demand for display devices is increasing in various forms. Meanwhile, various flat panel display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and an electro luminescent display (ELD) have been used.

The display device includes a gate wiring arranged in one direction, a data wiring arranged to cross the gate wiring, a thin film transistor arranged in a region where the gate wiring and the data wiring cross each other, and a pixel electrode electrically connected to the thin film transistor. A data signal is applied to the pixel electrode through the data line.

At this time, an image is displayed on the display device in accordance with a signal applied through the data line, and the electrical characteristics of the data line affect the image quality of the display device.

Therefore, it is necessary to measure whether or not the wiring of the display device is disconnected and electrical characteristics such as electrical resistance. In order to measure the electrical characteristics of the wiring, a terminal connected to the terminal of the measuring instrument is formed on the wiring. However, when a terminal is formed on the wiring, a groove is formed on the wiring. The resistance of the wiring increases due to the groove, and the performance of the display device deteriorates.

The present invention can form a test terminal that is branched from a wiring formed on a substrate and can measure the electrical characteristics of the wiring and the test terminal is branched from the wiring so that deterioration of the performance of the display can be prevented.

A display device according to the present invention includes a wiring formed on a substrate, a test terminal branched from the wiring, formed integrally with the wiring, for electrically connecting to an external device for measuring electrical characteristics of the wiring, And a film covering the test terminal and including a contact hole exposing a part of the test terminal.

A method of manufacturing a display device according to the present invention includes forming a test terminal that is branched from a wiring and a wiring on a substrate and a contact hole exposing a part of the test terminal and forming a film covering the wiring and the test terminal .

A method of irradiating an electrical characteristic of a display device according to the present invention includes a wiring formed on a substrate, a test terminal branched from the wiring, and a contact hole covering the wiring and the test terminal and exposing a part of the test terminal A step of applying an electrical signal to the wiring through the test terminal, and a step of measuring an electrical signal passing through the wiring by the measuring instrument .

Hereinafter, a method of manufacturing a display device and a display device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments, The present invention may be embodied in various other forms without departing from the spirit of the invention.

Example 1

1 is a plan view of a display device according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view taken along the line I-I 'in Fig. 1. Fig.

1 and 2, a display device includes a substrate 110, a gate wiring 120, a gate electrode 121, a common wiring 130, a common electrode 131, an insulating film 140, a channel pattern 150 A data line 160, a source electrode 161, a drain electrode 162, a protective layer 170, a pixel electrode 180, a test terminal 190 and a corrosion-preventing conductive layer 181.

The substrate 110 is a transparent insulating substrate. The substrate 110 may be, for example, a glass substrate or a quarts substrate.

The gate wiring 120 is disposed on the substrate 110 in the first direction. Although one gate wiring 120 is shown in Fig. 1, in the display device according to the first embodiment, a plurality of gate wirings 120 are disposed on the substrate.

The gate electrode 121 is branched from the gate wiring 120. The gate electrode 121 corresponds to the channel pattern 150 to be described later. Examples of the material that can be used for the gate wiring 120 and the gate electrode 121 include aluminum (Al), aluminum alloy, copper (Cu), molybdenum (Mo), and titanium (Ti).

The common wiring 130 is disposed on the substrate 110 in parallel with the gate wiring 120 in the first direction. In FIG. 1, one common wiring 130 is shown, but in the display device according to the first embodiment, a plurality of common wiring lines 130 are disposed on the substrate 110.

The common electrode 131 is branched from the common wiring 130. The common electrodes 131 are arranged alternately with the pixel electrodes 180 to be described later in a plan view. The common electrode 131 can be arranged in a jig shape when viewed in plan.

The insulating film 140 covers the gate wiring 120 and the common wiring 130. Examples of the material that can be used for the insulating film 140 include silicon oxide (SiOx) and silicon nitride (SiNx).

The channel pattern 150 is disposed on the insulating film 140. The channel pattern 150 is disposed corresponding to the data line 160, the drain electrode 162, and the test terminal 190 to be described later. The channel pattern 150 includes an amorphous silicon pattern 151 and an n + amorphous silicon pattern 152. The material used for the amorphous silicon pattern 151 is amorphous silicon. The amorphous silicon pattern 151 is disposed on the insulating film 140. The material used as the n + amorphous silicon pattern 152 is amorphous silicon into which impurities are implanted at a high concentration. The n + amorphous silicon pattern 152 has an island-shaped n + amorphous silicon pattern 152a on the amorphous silicon pattern 151 and an n + amorphous silicon pattern 152b having a shape corresponding to the data line 160 Respectively.

The data wiring 160 is arranged on the channel pattern 150 in the second direction so as to intersect with the gate wiring 120. In FIG. 1, one data line 160 is displayed. In the display device according to the first embodiment, a plurality of data lines 160 are arranged.

The source electrode 161 is branched from the data line 160 and the source electrode 161 is disposed on the channel pattern 150. [ Examples of the material that can be used for the data wiring 160 and the source electrode 161 include molybdenum and titanium.

And the drain electrodes 162 are spaced apart from the source electrode 161 at predetermined intervals. The drain electrode 162 is formed on the island-shaped n + amorphous silicon pattern 152a. The material used for the drain electrode 162 is the same as the material used for the data line 160. The drain electrode 162 includes a first groove 163 in contact with the pixel electrode 180 to be described later.

The protective film 170 covers the data line 160, the source electrode 161, the test terminal 190, and the drain electrode 162. The protective film 170 includes a second contact hole 172 and a fourth contact hole 174. The second contact hole 172 exposes a part of the test terminal 190 to be described later, and the fourth contact hole 174 exposes a part of the drain electrode 162. Examples of materials that can be used for the protective film 170 include silicon oxide and silicon nitride.

The pixel electrode 180 is disposed on the protective film 170 and is electrically connected to the drain electrode 162. The pixel electrode 180 has a comb shape when viewed in a plan view, and is disposed alternately with the common electrode 131. The pixel electrode 180 may have a jig jig shape in plan view. Examples of the material that can be used for the pixel electrode 180 include indium tin oxide (ITO) and indium zinc oxide (IZO).

When the test terminal 190 is formed on the data line 160, a groove is formed on the data line 160, and the resistance of the data line 160 is increased. On the other hand, since the test terminal 190 according to the embodiment of the present invention is branched from the data line 160, the test terminal 190 does not affect the electrical characteristics of the data line 160. That is, the performance of the display device is not deteriorated by the test terminal 190. The test terminal 190 may include at least one second groove 192a for electrically connecting to the corrosion-prevention conductive film 181 to be described later.

 The test terminal 190 and the data line 160 are integrally formed and the test terminal 190 is exposed through the second contact hole 172. At both ends of the data line 130, one test terminal 190 is branched from the data line 160.

The corrosion-resistant conductive film 181 covers the test terminal 190 exposed through the second contact hole 172 and electrically connects with the test terminal 190. The corrosion-resistant conductive film 181 prevents corrosion of the test terminal 190. Examples of materials that can be used as the corrosion-resistant conductive film 181 include indium tin oxide and indium zinc oxide.

The terminals of the measuring instrument are brought into contact with the corrosion prevention conductive film 181 and electrical signals generated in the measuring instrument are applied to the data wiring 160 through the test terminals 190 disposed at both ends of the data wiring 160 . The electrical signal passing through the data wiring 160 is analyzed by the measuring instrument and the electrical characteristics of the data wiring 160 are measured. Examples of the electrical characteristics include resistance of the data line 160, disconnection, capacitance, and the like. It is possible to measure a capacitance by applying a current whose voltage intensity varies with time to the data line 160 and measuring the intensity of the current passing through the data line 160 with time. For example, the capacitance can be measured by the following equation.

? Q = C? V

ΔQ = ∫Δi dt

That is, by integrating the intensity? I of the current passing through the data line 160 according to time, it is possible to know a change? Q of the amount of charge. If the amount of charge is divided by the intensity? V of the changed voltage, Can be obtained.

An electrical signal having a predetermined amplitude and a predetermined frequency is applied to the data line 160 and the variation of the amplitude and the frequency of the electrical signal passing through the data line 160 is analyzed, The resistance and the capacitance of the wiring 160 can be measured.

Example 2

3A to 3C are cross-sectional views illustrating a process according to a method of manufacturing a display device according to a second embodiment of the present invention.

Referring to FIG. 3A, a gate wiring 120, a gate electrode 121, a common wiring 130, and a common electrode 131 are formed on a substrate 110.

In order to form the gate wiring 120, the gate electrode 121, the common wiring 130, and the common electrode 131, a metal film is formed over the entire surface of the substrate 110 which is transparent and insulator. Examples of the material that can be used as the metal film include aluminum, an aluminum alloy, copper, molybdenum, and titanium. The metal film may be formed by a chemical vapor deposition process (CVD) or a sputtering process.

After the metal film is formed, a photoresist film is formed over the entire surface of the metal film. The photoresist film may include a photosensitive material, and the photoresist film may be formed through a spin process or a slit coating process. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the metal film. The photoresist pattern has a shape corresponding to the gate wiring 120 and the common wiring 130.

The metal film is patterned using the photoresist pattern as an etching mask, and a gate wiring 120, a gate electrode 121, a common wiring 130, and a common electrode 130 are formed on a substrate 110.

The gate electrode 121 is branched from the gate wiring 120 and the common electrode 131 is branched from the common wiring 130. [

After the gate wiring 120, the gate electrode 121, the common wiring 130 and the common electrode 131 are formed, the gate wiring 120, the gate electrode 121, the common wiring 130 and the common electrode 131 Is formed on the substrate 110 over the entire surface. Examples of the material that can be used for the insulating film 140 include silicon nitride and silicon oxide.

3B, after an insulating layer 140 is formed on a substrate 110, a channel pattern 150, a data line 160, a source electrode 161, a drain electrode 162, A test terminal 190 is formed.

In order to form the channel pattern 150, the data wiring 160, the source electrode 161, the drain electrode 162 and the test terminal 190, an amorphous silicon thin film, an n + amorphous silicon A thin film and a source / drain metal film are sequentially formed. The material used for the amorphous silicon thin film is amorphous silicon, and the material used for the n + amorphous silicon thin film is amorphous silicon doped with impurities at a high concentration. Examples of the material that can be used as the source / drain metal film include molybdenum and titanium.

After the amorphous silicon thin film, the n + amorphous silicon thin film, and the source / drain metal film are formed, a photoresist film is formed on the source / drain metal film. The photoresist film is patterned through a photolithography process including an exposure process and a development process. At this time, a part of the photoresist film corresponding to the region between the source electrode 161 and the drain electrode 162 is removed.

Thereafter, a photoresist film having a shape corresponding to the channel pattern 150, the data line 160, the source electrode 161, the drain electrode 162, and the test terminal 190 is formed on the source / . The amorphous silicon thin film, the n + amorphous silicon thin film and the source / drain metal film are patterned using the photoresist pattern as an etching mask, and a channel pattern 150, a data line 160, a source electrode 161 And a drain electrode 162 are formed.

The channel pattern 150 is formed corresponding to the data line 160, the source electrode 161, the drain electrode 162, and the test terminal 190. The channel pattern 150 includes an amorphous silicon pattern 151 and an n + amorphous silicon pattern 152. The amorphous silicon pattern 151 is formed on the insulating film 140 and the n + amorphous silicon pattern 152a corresponding to the island-shaped n + amorphous silicon pattern 152a and the data wiring 160 is formed on the amorphous silicon pattern 151 As shown in FIG.

The data line 160 is formed so as to intersect with the gate line 120 in the second direction and the source electrode 161 is branched from the data line 160. The drain electrode 162 is spaced apart from the source electrode 161 by a predetermined distance. The drain electrode 162 is formed on the island-shaped n + amorphous silicon pattern 152. The test terminal 190 is branched from the data line 160 and is formed integrally with the data line 160.

3C, after the data line 160, the source electrode 161, the test terminal 190, and the drain electrode 162 are formed, the data line 160, the source electrode 161, the test terminal 190, And the drain electrode 162 are formed on the substrate.

An inorganic film covering the data line 160, the source electrode 161, the test terminal 190, and the drain electrode 162 is formed over the entire surface of the substrate 110 in order to form the protective film 170. [ Examples of the material constituting the inorganic film include silicon oxide and silicon nitride. After the inorganic film is formed, a photoresist pattern is formed over the entire surface of the inorganic film. The photoresist pattern is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the inorganic film. The photoresist pattern exposes the inorganic film corresponding to a part of the test terminal 190 and the inorganic film corresponding to a part of the drain electrode 162. The inorganic film is patterned using the photoresist pattern as an etching mask. At this time, the inorganic film corresponding to a part of the test terminal 190 and a part of the test terminal 190 are removed together by a dry etching process. At the same time, a part of the inorganic film and the drain electrode 162 corresponding to a part of the drain electrode 162 is removed by a dry etching process and a protective film 170, a groove (not shown) on the test terminal 190 192a and the groove 163 on the drain electrode 162 are formed.

The protective film 170 includes a second contact hole 172 and a fourth contact hole 174. The second contact hole 172 is formed to expose a part of the test terminal 190 and the fourth contact hole 174 is formed to expose a part of the drain electrode 162.

After the protective film 170 is formed, the pixel electrode 180 and the corrosion-preventing conductive film 181 are formed on the protective film 170.

In order to form the pixel electrode 180 and the corrosion-prevention conductive film 181, a transparent conductive film is formed over the entire surface of the protective film 170. Examples of materials that can be used as the transparent conductive film include indium tin oxide and indium zinc oxide. After the transparent conductive film is formed, a photoresist film is formed over the entire surface of the transparent conductive film. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the transparent conductive film. The photoresist pattern has a shape corresponding to the pixel electrode 180 and the corrosion-prevention conductive film 181. The transparent conductive film is patterned using the photoresist pattern as an etching mask, and the pixel electrode 180 and the corrosion-prevention conductive film 181 are formed on the protective film 170.

The pixel electrode 180 is formed with a comb shape when seen in a plan view, and is alternately formed with the common electrode 131. The pixel electrode 180 is electrically connected to the drain electrode 162 exposed through the fourth contact hole 174. The corrosion-resistant conductive film 181 is formed to cover the groove 192a of the test terminal 190 exposed through the second contact hole 172. [

Example 3

4 is a plan view of a display device according to a third embodiment of the present invention. 5 is a cross-sectional view taken along line II-II 'in FIG.

4 and 5, the display device includes a substrate 110, a gate wiring 120, a gate electrode 121, a common wiring 130, a common electrode 131, an insulating film 140, a channel pattern 150 A data line 160, a source electrode 161, a drain electrode 162, a protective layer 170, a pixel electrode 180, a test terminal 190 and a corrosion-preventing conductive layer 181.

The substrate 110 is a transparent insulating substrate. The substrate 110 may be, for example, a glass substrate or a quarts substrate.

The gate wiring 120 is disposed on the substrate 110 in the first direction. Although one gate wiring 120 is shown in Fig. 4, in the display device according to the third embodiment, a plurality of gate wirings 120 are disposed on the substrate.

The gate electrode 121 is branched from the gate wiring 120. The gate electrode 121 corresponds to the channel pattern 150 to be described later. Examples of the material constituting the gate wiring 120 and the gate electrode 121 include aluminum (Al), aluminum alloy, copper (Cu), molybdenum (Mo), and titanium (Ti).

The common wiring 130 is disposed on the substrate 110 in parallel with the gate wiring 120 in the first direction. In FIG. 4, one common wiring 130 is displayed. In the display device according to the third embodiment, a plurality of common wiring lines 130 are disposed on the substrate 110.

The common electrode 131 is branched from the common wiring 130. The common electrodes 131 are arranged alternately with the pixel electrodes 180 to be described later in a plan view. The common electrode 131 can be arranged in a jig shape when viewed in plan.

The insulating film 140 covers the gate wiring 120, the gate electrode 121, the common wiring 130, the common electrode 131, a first test terminal 191 to be described later and a third test terminal 193 to be described later . Examples of the material forming the insulating film 140 include silicon oxide (SiOx) and silicon nitride (SiNx).

The channel pattern 150 is disposed on the insulating film 140. The channel pattern 150 is disposed corresponding to the gate electrode 121. [ The channel pattern 150 includes an amorphous silicon pattern 151 and an n + amorphous silicon pattern 152. The material used for the amorphous silicon pattern 151 is amorphous silicon. The amorphous silicon pattern 151 is disposed on the insulating film 140. The material used as the n + amorphous silicon pattern 152 is amorphous silicon into which impurities are implanted at a high concentration. The n + amorphous silicon pattern 152 is arranged on the amorphous silicon pattern 151 with a pair of spaced apart from each other at a predetermined interval.

The data wiring 160 is disposed on the insulating film 140 in the second direction so as to intersect with the gate wiring 120. Although one data line 160 is shown in FIG. 4, a plurality of data lines 160 are arranged in the display device according to the third embodiment.

The source electrode 161 is branched from the data line 160. The source electrode 161 is in contact with one of the pair of n + amorphous silicon patterns 152. Examples of the material that can be used for the data wiring 160 and the source electrode 161 include aluminum, an aluminum alloy, copper, molybdenum, titanium, and the like.

The drain electrodes 162 are spaced apart from the source electrode 161 at predetermined intervals. And the drain electrode 162 is in contact with the other one of the pair of n + amorphous silicon patterns 152. The material used for the drain electrode 162 is the same as the material used for the data line 160.

The protective film 170 covers the data line 160, the source electrode 161, the second test terminal 192, and the drain electrode 162, which will be described later. The protective film 170 includes a first contact hole 171, a second contact hole 172, a third contact hole 173, and a fourth contact hole 174. The first contact hole 171 exposes a part of the first test terminal 191 to be described later and the second contact hole 172 exposes a part of the second test terminal 192 to be described later. The third contact hole 173 exposes a part of the third test terminal 193 to be described later and the fourth contact hole 174 exposes a part of the drain electrode 162. Examples of materials that can be used for the protective film 170 include silicon oxide and silicon nitride.

The pixel electrode 180 is disposed on the protective film 170 and is electrically connected to the drain electrode 162. The pixel electrode 180 has a comb shape when viewed in a plane, and is alternately arranged with the common electrode 130. The pixel electrode 180 may have a jig jig shape in plan view. Examples of the material that can be used for the pixel electrode 180 include indium tin oxide (ITO) and indium zinc oxide (IZO).

The test terminal 190 includes a first test terminal 191, a second test terminal 192 and a third test terminal 193. A groove is formed on the gate wiring 120, the data wiring 160 and the common wiring 130 when the test terminal 190 is formed on the gate wiring 120, the data wiring 160 and the common wiring 130 And the resistance of the gate wiring 120, the data wiring 160, and the common wiring 130 increases. On the other hand, according to the embodiment of the present invention, the first test terminal 191 is branched from the gate wiring 120, and the second test terminal 192 is branched from the data wiring 160. The third test terminal 193 branches off from the common wiring 130. Therefore, the test terminal 190 does not affect the electrical characteristics of the gate wiring 120, the common wiring 130, and the data wiring 160. That is, the performance of the display device is not deteriorated by the test terminal 190. The test terminal 190 may include a plurality of grooves 191a and 192a formed to increase the contact area with the corrosion-prevention conductive film 181 to be described later.

 The first test terminal 191 and the gate wiring 120 are integrally formed and the first test terminal 191 is exposed through the first contact hole 171. One first test terminal 191 is branched from the gate wiring 120 at both ends of the gate wiring 120.

The second test terminal 192 and the data line 160 are integrally formed and the second test terminal 192 is exposed through the second contact hole 172. At each end of the data line 130, one second test terminal 192 is branched from the data line 160.

The third test terminal 193 and the common wiring 130 are integrally formed and the third test terminal 193 is exposed through the third contact hole 173. [ One third test terminal 193 is branched from the common wiring 130 at both ends of the common wiring 130.

The corrosion-resistant conductive film 181 includes a first corrosion-prevention conductive film 182, a second corrosion-prevention conductive film 183, and a third corrosion-prevention conductive film 184. The first corrosion-resistant conductive film 182 covers the first test terminal 191 exposed through the first contact hole 171. The second corrosion-resistant conductive film 183 covers the second test terminal 192 exposed through the second contact hole 172. The third corrosion-preventing conductive film 184 covers the third test terminal 193 exposed through the third contact hole 173. The corrosion-resistant conductive film 181 prevents corrosion of the test terminal 190. Examples of materials that can be used as the corrosion-resistant conductive film 181 include indium tin oxide and indium zinc oxide.

The terminals of the measuring device are brought into contact with the first corrosion-resistant conductive film 182 and electrical signals generated in the measuring device through the first test terminals 191 disposed at both ends of the gate wiring 120 pass through the gate wiring 120 . The electrical signal passing through the gate wiring 120 is analyzed by the measuring instrument and the electrical characteristics of the gate wiring 120 are measured. Examples of the electrical characteristics include resistance of the gate wiring 120, disconnection, capacitance, and the like.

The terminals of the measuring device are brought into contact with the second corrosion preventing conductive film 183 and electrical signals generated in the measuring device are applied to the data lines 160 . The electrical signal passing through the data wiring 160 is analyzed by the measuring instrument and the electrical characteristics of the data wiring 160 are measured. Examples of the electrical characteristics include resistance of the data line 160, disconnection, capacitance, and the like.

The terminals of the measuring device are brought into contact with the third corrosion preventing conductive film 184 and electrical signals generated in the measuring device are transmitted through the third test terminals 193 disposed at both ends of the common interconnection 130 to the common interconnection 160 . The electrical signal passing through the common wiring 130 is analyzed by the measuring instrument and the electrical characteristics of the common wiring 130 are measured. Examples of the electrical characteristics include resistance of the common wiring 130, disconnection, capacitance, and the like.

A current whose voltage intensity varies with time is applied to the gate wiring 120, the common wiring 130 and the data wiring 160 and the gate wiring 120, the common wiring 130 and the data wiring 160 The capacitance of the gate wiring 120, the common wiring 130, and the data wiring 160 can be measured by measuring the intensity of the passing current with time. For example, the capacitance of the gate wiring 120, the common wiring 130, and the data wiring 160 can be measured by the following equation.

? Q = C? V

ΔQ = ∫Δi dt

That is, when the intensity? I of the current passing through the gate wiring 120, the common wiring 130, and the data wiring 160 is integrated over time, it is possible to know the change? Q of the amount of charge, The capacitance of the gate wirings 120, the common wirings 130, and the data wirings 160 can be obtained by dividing by the intensity? V of the voltage.

An electrical signal having a predetermined amplitude and a predetermined frequency is applied to the gate wiring 120, the common wiring 130 and the data wiring 160 and the gate wiring 120, the common wiring 130, The resistance and the capacitance of the gate wiring 120, the common wiring 130, and the data wiring 160 can be measured by analyzing the variation of the amplitude and the frequency of the electric signal passing through the data line 130 and the data line 160.

Example 4

6A to 6C are cross-sectional views illustrating steps of a method of manufacturing a display device according to a fourth embodiment of the present invention.

6A, a gate wiring 120, a gate electrode 121, a first test terminal 191, a common wiring 130, a common electrode 131, and a third test terminal 193 Is formed.

In order to form the gate wiring 120, the gate electrode 121, the first test terminal 191, the common wiring 130, the common electrode 131 and the third test terminal 193, A metal film is formed over the entire surface of the substrate 110. Examples of the material that can be used as the metal film include aluminum, an aluminum alloy, copper, molybdenum, and titanium. The metal film may be formed by a chemical vapor deposition process (CVD) or a sputtering process.

After the metal film is formed, a photoresist film is formed over the entire surface of the metal film. The photoresist film may include a photosensitive material, and the photoresist film may be formed through a spin process or a slit coating process. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the metal film. The photoresist pattern has a shape corresponding to the gate wiring 120, the gate electrode 121, the first test terminal 191, the common wiring 130, the common electrode 131 and the third test terminal 193 .

The metal film is patterned using the photoresist pattern as an etching mask and a gate wiring 120, a gate electrode 121, a first test terminal 191, a common wiring 130, A first test terminal 131 and a third test terminal 193 are formed.

The gate electrode 121 is branched from the gate wiring 120 and the common electrode 131 is branched from the common wiring 130. [ The first test terminal 191 and the third test terminal 193 are formed with a plurality of grooves 191a when viewed in a plan view. The first test terminal 191 is branched from the gate wiring 120 and the third test terminal 193 is branched from the common wiring 130.

After the gate wiring 120, the gate electrode 121, the first test terminal 191, the common wiring 130, the common electrode 131 and the third test terminal 193 are formed, the gate wiring 120, The insulating film 140 covering the electrode 121, the first test terminal 191, the common wiring 130, the common electrode 131 and the third test terminal 193 is formed over the entire surface of the substrate 110 do. Examples of the material that can be used for the insulating film 140 include silicon nitride and silicon oxide.

Referring to FIG. 6B, an insulating layer 140 is formed on a substrate 110, and a channel pattern 150 is formed on an insulating layer 140.

In order to form the channel pattern 150, an amorphous silicon thin film and an n + amorphous silicon thin film are sequentially formed on the insulating film 140 over the entire surface. The material used for the amorphous silicon thin film is amorphous silicon, and the material used for the n + amorphous silicon thin film is amorphous silicon doped with impurities at a high concentration. After the amorphous silicon thin film and the n + amorphous silicon thin film are formed, a photoresist film is formed on the n + amorphous silicon thin film. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist film having a shape corresponding to the channel pattern 150 is formed on the n + amorphous silicon thin film. The amorphous silicon thin film and the n + amorphous silicon thin film are patterned using the photoresist film as an etching mask, and a channel pattern 150 is formed on the insulating film 140.

The channel pattern 150 is formed corresponding to the gate electrode 121. The channel pattern 150 includes an amorphous silicon pattern 151 and an n + amorphous silicon pattern 152. The amorphous silicon pattern 151 is formed on the insulating film 140 and the pair of the n + amorphous silicon patterns 152 are formed on the amorphous silicon pattern 151 at a predetermined spacing from each other.

After the channel pattern 150 is formed, the data line 160, the source electrode 161, the second test terminal 192, and the drain electrode 162 are formed on the insulating layer 140.

A source / drain metal film is formed over the entire surface of the insulating film 140 to form the data wiring 160, the source electrode 161, the second test terminal 192, and the drain electrode 162. [ Examples of the material that can be used as the source / drain metal film include aluminum, an aluminum alloy, copper, molybdenum, titanium, and the like. After the source / drain metal film is formed, a photoresist film is formed over the entire surface of the source / drain metal film. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the source / drain metal film. The photoresist pattern has a shape corresponding to the data line 160, the source electrode 161, the second test terminal 192, and the drain electrode 162. A source electrode 160, a source electrode 161, a second test terminal 192, and a drain electrode 162 are formed on the insulating layer 140. The source and drain metal layers are patterned using the photoresist pattern as an etch mask, .

The data line 160 is formed to intersect the gate line 120 in the second direction and the source electrode 161 is in contact with one of the pair of n + amorphous silicon patterns 152. The source electrode 161 is branched from the data line 160. The drain electrode 162 is spaced apart from the source electrode 161 by a predetermined distance. And the drain electrode 162 is in contact with the other one of the pair of n + amorphous silicon patterns 152. The second test terminal 192 is branched from the data line 160 and formed integrally with the data line 160. The second test terminal 192 is formed to include a plurality of grooves 192a.

6C, after the data line 160, the source electrode 161, the second test terminal 192, and the drain electrode 162 are formed, the data line 160, the source electrode 161, A protective film 170 covering the terminal 192 and the drain electrode 162 is formed on the substrate.

An inorganic film covering the data line 160, the source electrode 161, the second test terminal 192, and the drain electrode 162 is formed over the entire surface of the substrate 110 in order to form the protective film 170 . Examples of the material constituting the inorganic film include silicon oxide and silicon nitride. After the inorganic film is formed, a photoresist pattern is formed over the entire surface of the inorganic film. The photoresist pattern is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the inorganic film. The photoresist pattern includes an inorganic film corresponding to a part of the first test terminal 191, an inorganic film corresponding to a part of the second test terminal 192, an inorganic film corresponding to a part of the third test terminal 193, The inorganic film corresponding to a part of the drain electrode 162 is exposed. The inorganic film is patterned using the photoresist pattern as an etching mask, and a protective film 170 is formed on the substrate 110. When the inorganic film is patterned, the insulating film 140 corresponding to a part of the first test terminal 191 and the insulating film 140 corresponding to a part of the third test terminal 193 are removed.

The protective film 170 includes a first contact hole 171, a second contact hole 172, a third contact hole 173, and a fourth contact hole 174. The first contact hole 171 is formed to expose a part of the first test terminal 191 and the second contact hole 172 is formed to expose a part of the second test terminal 192. The third contact hole 173 is formed to expose a part of the third test terminal 193 and the fourth contact hole 174 is formed to expose a part of the drain electrode 162.

After the protective film 170 is formed, the pixel electrode 180 and the corrosion-preventing conductive film 181 are formed on the protective film 170.

In order to form the pixel electrode 180 and the corrosion-prevention conductive film 181, a transparent conductive film is formed over the entire surface of the protective film 170. Examples of materials that can be used as the transparent conductive film include indium tin oxide and indium zinc oxide. After the transparent conductive film is formed, a photoresist film is formed over the entire surface of the transparent conductive film. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the transparent conductive film. The photoresist pattern has a shape corresponding to the pixel electrode 180 and the corrosion-prevention conductive film 181. The transparent conductive film is patterned using the photoresist pattern as an etching mask, and the pixel electrode 180 and the corrosion-prevention conductive film 181 are formed on the protective film 170.

The pixel electrode 180 is formed with a comb shape when seen in a plan view, and is alternately formed with the common electrode 131. The pixel electrode 180 is electrically connected to the drain electrode 162 exposed through the fourth contact hole 174. The corrosion-resistant conductive film 181 includes a first corrosion-prevention conductive film 182, a second corrosion-prevention conductive film 183, and a third corrosion-prevention conductive film 184. The first corrosion preventing conductive film 182 covers the first test terminal 191 exposed through the first contact hole 171 and the second corrosion preventing conductive film 183 covers the first test terminal 191 exposed through the second contact hole 172 And the second test terminal 192 exposed through the second test terminal 192. [ The third corrosion-resistant conductive film 184 is formed to cover the third test terminal 193 exposed through the third contact hole 173.

Example 5

7 is a plan view of a display device according to a fifth embodiment of the present invention. 8 is a cross-sectional view taken along line III-III 'in FIG.

7 and 8, the display device includes a substrate 110, a gate wiring 120, a gate electrode 121, an insulating film 140, a channel pattern 150, a data wiring 160, a drain electrode 162 A protective film 170, a pixel electrode 180, a test terminal 190, and a corrosion-preventing conductive film 181.

The substrate 110 is a transparent insulating substrate. The substrate 110 may be, for example, a glass substrate or a quartz substrate.

The gate wiring 120 is disposed on the substrate 110 in the first direction. In FIG. 7, one gate wiring 120 is shown. In the display device according to the fifth embodiment, a plurality of gate wirings 120 are disposed on the substrate 110.

The gate electrode 121 is branched from the gate wiring 120. The gate electrode 121 corresponds to the channel pattern 150 to be described later. Examples of the material that can be used for the gate wiring 120 and the gate electrode 121 include aluminum, an aluminum alloy, copper, molybdenum, and titanium.

The insulating film 140 covers the gate wiring 120, the gate electrode 121 and the first test terminal 191 to be described later. Examples of the material that can be used for the insulating film 140 include silicon oxide and silicon nitride.

The channel pattern 150 is disposed on the insulating film 140. The channel pattern 150 is disposed corresponding to the gate electrode 121. [ The channel pattern 150 includes an amorphous silicon pattern 151 and an n + amorphous silicon pattern 152. The material used for the amorphous silicon pattern 151 is amorphous silicon. The amorphous silicon pattern 151 is disposed on the insulating film 140. The material used as the n + amorphous silicon pattern 152 is amorphous silicon into which impurities are implanted at a high concentration. The n + amorphous silicon pattern 152 is arranged on the amorphous silicon pattern 151 with a pair of spaced apart from each other at a predetermined interval.

The data wiring 160 is disposed on the insulating film 140 in the second direction so as to intersect with the gate wiring 120. Although one data line 160 is shown in FIG. 7, a plurality of data lines 160 are arranged in the display device according to the fifth embodiment. The source electrode 161 is branched from the data line 160. The source electrode 161 is in contact with one of the pair of n + amorphous silicon patterns 152. Examples of the material that can be used for the data wiring 160 and the source electrode 161 include aluminum, an aluminum alloy, copper, molybdenum, titanium, and the like.

And the drain electrodes 162 are spaced apart from the source electrode 161 at predetermined intervals. And the drain electrode 162 is in contact with the other one of the pair of n + amorphous silicon patterns 152. The material used for the drain electrode 162 is the same as the material used for the data line 160.

The protective film 170 covers the data line 160, the source electrode 161, the second test terminal 192, and the drain electrode 162, which will be described later. The protective film 170 includes a first contact hole 171, a second contact hole 172, and a fourth contact hole 174. The first contact hole 171 exposes a part of the first test terminal 191 to be described later and the second contact hole 172 exposes a part of the second test terminal 192 to be described later. The fourth contact hole 174 exposes a part of the drain electrode 162. Examples of materials that can be used for the protective film 170 include silicon oxide and silicon nitride.

The pixel electrode 180 is disposed on the protective film 170 and is electrically connected to the drain electrode 162. Examples of the material that can be used for the pixel electrode 180 include indium tin oxide and indium zinc oxide.

The test terminal 190 includes a first test terminal 191 and a second test terminal 192. When a test terminal 190 is formed on the gate wiring 120 and the data wiring 160, a groove is formed on the gate wiring 120 and the data wiring 160, and the gate wiring 120 And the resistance of the data line 160 increases. On the other hand, according to the present embodiment, the first test terminal 191 is branched from the gate wiring 120 and the second test terminal 192 is branched from the data wiring 160. Therefore, the test terminal 190 does not affect the electrical characteristics of the gate wiring 120 and the data wiring 160. That is, the performance of the display device is not deteriorated by the test terminal 190. The test terminal 190 includes a plurality of grooves 191a and 192a formed to increase the contact area with the corrosion-prevention conductive film 181 to be described later.

 The first test terminal 191 and the gate wiring 120 are integrally formed and a part of the first test terminal 191 is exposed through the first contact hole 171. One first test terminal 191 is branched from the gate wiring 120 at both ends of the gate wiring 120.

The second test terminal 192 and the data line 160 are integrally formed and a part of the second test terminal 192 is exposed through the second contact hole 172. At both ends of the data line 160, a pair of second test terminals 192 are branched from the data line 160. The pair of second test terminals 192 corresponds to each other from the data line 160 and branches in the opposite direction.

The corrosion-prevention conductive film 181 includes a first corrosion-prevention conductive film 182 and a second corrosion-prevention conductive film 183. The first corrosion-resistant conductive film 182 covers the first test terminal 191 exposed through the first contact hole 171. The second corrosion-preventive conductive film 183 covers a pair of second test terminals 192 branched in opposite directions corresponding to each other. The corrosion-resistant conductive film 181 prevents corrosion of the test terminal 190. Since the second corrosion-resistant conductive film 183 covers the pair of second test terminals 192, the flatness of the second corrosion-resistant conductive film 183 is smaller than that of the second test terminal 192 It is wider. Therefore, the terminal of the measuring instrument can easily be electrically connected to the second corrosion-prevention conductive film 183. Examples of materials that can be used as the corrosion-resistant conductive film 181 include indium tin oxide and indium zinc oxide.

The terminals of the measuring device are brought into contact with the first corrosion preventing conductive film 182 and electric signals generated in the measuring device are applied to the gate wirings 120 . The electrical signal passing through the gate wiring 120 is analyzed by the measuring instrument and the electrical characteristics of the gate wiring 120 are measured. Examples of the electrical characteristics include resistance, disconnection, capacitance, and the like.

The terminals of the measuring device are brought into contact with the second corrosion-resistant conductive film 183 and electric signals generated in the measuring device are applied to the data lines 160 (not shown) via the second test terminals 192 disposed at both ends of the data line 160 . The electrical signal passing through the data wiring 160 is analyzed by the measuring instrument and the electrical characteristics of the data wiring 160 are measured. Examples of the electrical characteristics include resistance, disconnection, capacitance, and the like.

A current whose voltage intensity varies with time is applied to the gate wiring 120 and the data wiring 160 and the intensity of the current passing through the gate wiring 120 and the data wiring 160 is measured with time, The capacitance of the gate wiring 120 and the data wiring 160 can be measured. For example, the capacitance of the gate wiring 120 and the data wiring 160 can be measured by the following equation.

? Q = C? V

ΔQ = ∫Δi dt

That is, when the intensity? I of the current passing through the gate wiring 120 and the data wiring 160 is integrated over time, the change? Q of the amount of charge can be known, and the intensity? V of the voltage, The capacitance of the gate wiring 120 and the data wiring 160 can be obtained.

An electrical signal having a predetermined amplitude and a predetermined frequency is applied to the gate wiring 120 and the data wiring 160 and the electric signal having the predetermined amplitude and frequency is applied to the gate wiring 120 and the data wiring 160, The resistance and the capacitance of the gate wiring 120 and the data wiring 160 can be measured by analyzing the change of the amplitude and frequency of the electrical signal.

Example 6

9A to 9C are cross-sectional views illustrating a process according to a method of manufacturing a display device according to a fourth embodiment of the present invention.

Referring to FIG. 9A, a gate wiring 120, a gate electrode 121 and a first test terminal 191 are formed on a substrate 110.

In order to form the gate wiring 120, the gate electrode 121 and the first test terminal 191, a metal film is formed over the entire surface of the substrate 110 which is a transparent insulator. Examples of the material that can be used as the metal film include aluminum, an aluminum alloy, copper, molybdenum, and titanium. The metal film may be formed by a chemical vapor deposition process or a sputtering process.

After the metal film is formed, a photoresist film is formed over the entire surface of the metal film. The photoresist film may include a photosensitive material, and the photoresist film may be formed through a spin process or a slit coating process. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the metal film. The photoresist pattern has a shape corresponding to the gate wiring 120 and the first test terminal 191. The metal film is patterned using the photoresist pattern as an etching mask, and a gate wiring 120, a gate electrode 121, and a first test terminal 191 are formed on the substrate 110.

The gate electrode 121 is branched from the gate wiring 120. The first test terminal 191 has a plurality of grooves 191a as viewed in plan. The first test terminal 191 is formed by branching from the gate wiring 120 at both ends of the gate wiring 120.

After the gate wiring 120, the gate electrode 121 and the first test terminal 191 are formed, an insulating film 140 covering the gate wiring 120 and the first test terminal 191 is formed on the substrate 110, Respectively. Examples of the material that can be used for the insulating film 140 include silicon nitride and silicon oxide.

9B, an insulating layer 140 is formed on a substrate 110, and a channel pattern 150 is formed on an insulating layer 140. Referring to FIG.

In order to form the channel pattern 150, an amorphous silicon thin film and an n + amorphous silicon thin film are sequentially formed on the insulating film 140 over the entire surface. The material used for the amorphous silicon thin film is amorphous silicon, and the material used for the n + amorphous silicon thin film is amorphous silicon doped with impurities at a high concentration. After the amorphous silicon thin film and the n + amorphous silicon thin film are formed, a photoresist film is formed on the n + amorphous silicon thin film. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist film having a shape corresponding to the channel pattern 150 is formed on the n + amorphous silicon thin film. The amorphous silicon thin film and the n + amorphous silicon thin film are patterned using the photoresist film as an etching mask, and a channel pattern 150 is formed on the insulating film 140.

The channel pattern 150 is formed corresponding to the gate electrode 121. The channel pattern 150 includes an amorphous silicon pattern 151 and an n + amorphous silicon pattern 152. The amorphous silicon pattern 151 is formed on the insulating film 140 and the pair of the n + amorphous silicon patterns 152 are formed on the amorphous silicon pattern 151 at a predetermined spacing from each other.

After the channel pattern 150 is formed, the data line 160, the second test terminal 192, and the drain electrode 162 are formed on the insulating film 140.

A source / drain metal film is formed over the entire surface of the insulating film 140 to form the data wiring 160, the source electrode 161, the second test terminal 192, and the drain electrode 162. [ Examples of the material that can be used as the source / drain metal film include aluminum, an aluminum alloy, copper, molybdenum, titanium, and the like. After the source / drain metal film is formed, a photoresist film is formed over the entire surface of the source / drain metal film. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the source / drain metal film. The photoresist pattern has a shape corresponding to the data line 160, the second test terminal 192, and the drain electrode 162. A source electrode 160, a source electrode 161, a second test terminal 192, and a drain electrode 162 are formed on the insulating layer 140. The source and drain metal layers are patterned using the photoresist pattern as an etch mask, .

The data line 160 is formed to intersect the gate line 120 in the second direction and the source electrode 161 is in contact with one of the pair of n + amorphous silicon patterns 152. The source electrode 161 is branched from the data line 160. The drain electrode 162 is spaced apart from the source electrode 161 by a predetermined distance. And the drain electrode 162 is in contact with the other one of the pair of n + amorphous silicon patterns 152. The pair of the second test terminals 192 correspond to each other, branch from the data line 160 in the opposite direction, and are formed integrally with the data line 160. The second test terminal 192 is formed to include a plurality of grooves 192a.

9C, after the data line 160, the second test terminal 192, and the drain electrode 162 are formed, the data line 160, the second test terminal 192, and the drain electrode 162 A protective film 170 is formed on the substrate 110.

An inorganic film covering the data line 160, the source electrode 161, the second test terminal 192, and the drain electrode 162 is formed over the entire surface of the substrate 110 in order to form the protective film 170 . Examples of the material constituting the inorganic film include silicon oxide and silicon nitride. After the inorganic film is formed, a photoresist pattern is formed over the entire surface of the inorganic film. The photoresist pattern is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the inorganic film. The photoresist pattern exposes an inorganic film corresponding to a part of the first test terminal 191, an inorganic film corresponding to a part of the second test terminal 192, and an inorganic film corresponding to a part of the drain electrode 162. The inorganic film is patterned using the photoresist pattern as an etching mask, and a protective film 170 is formed on the substrate 110. When the inorganic film is patterned, the insulating film 140 corresponding to a part of the first test terminal 191 is removed.

The protective film 170 includes a first contact hole 171, a second contact hole 172, and a fourth contact hole 174. The first contact hole 171 is formed to expose a part of the first test terminal 191 and the second contact hole 172 is formed to expose a part of the second test terminal 192. The fourth contact hole 174 is formed to expose a part of the drain electrode 162.

After the protective film 170 is formed, the pixel electrode 180 and the corrosion-preventing conductive film 181 are formed on the protective film 170.

In order to form the pixel electrode 180 and the corrosion-prevention conductive film 181, a transparent conductive film is formed over the entire surface of the protective film 170. Examples of materials that can be used as the transparent conductive film include indium tin oxide and indium zinc oxide. After the transparent conductive film is formed, a photoresist film is formed over the entire surface of the transparent conductive film. The photoresist film is patterned through a photolithography process including an exposure process and a development process, and a photoresist pattern is formed on the transparent conductive film. The photoresist pattern has a shape corresponding to the pixel electrode 180 and the corrosion-prevention conductive film 181. The transparent conductive film is patterned using the photoresist pattern as an etching mask, and the pixel electrode 180 and the corrosion-prevention conductive film 181 are formed on the protective film.

The pixel electrode 180 is electrically connected to the drain electrode 162 exposed through the fourth contact hole 174. The corrosion-prevention conductive film 181 includes a first corrosion-prevention conductive film 182 and a second corrosion-prevention conductive film 183. The first corrosion preventing conductive film 182 covers the first test terminal 191 exposed through the first contact hole 171 and the second corrosion preventing conductive film 183 covers the first test terminal 191 exposed through the second contact hole 172 And a second test terminal 192 exposed through the first and second test terminals 192 and 192.

An electrical signal is applied to the wiring through a test terminal which is branched from the wiring formed on the substrate and formed integrally with the wiring. Therefore, according to the present invention, the electrical characteristics of the wiring arranged on the substrate can be measured without deteriorating the performance of the display device.

Claims (19)

A wiring formed on the substrate; A test terminal which is branched from the wiring at both ends of the wiring and which is formed integrally with the wiring and which is electrically connected to an external device that measures electrical characteristics of the wiring; And And a contact hole covering the wiring and the test terminal and exposing a part of the test terminal. The display device according to claim 1, wherein the wiring comprises a first wiring arranged in a first direction on the substrate and a second wiring arranged in a second direction on the substrate. The display device according to claim 2, wherein the wiring includes a third wiring arranged in parallel with the first wiring. The display device according to claim 1, wherein the wiring and the test terminal are formed on the same layer. The display device according to claim 1, wherein the test terminal comprises at least one groove. The display device according to claim 1, further comprising a corrosion-preventing conductive film covering the test terminals exposed by the contact holes. The display device according to claim 6, wherein the corrosion-resistant conductive film comprises at least one of indium tin oxide and indium zinc oxide. delete The display device according to claim 1, wherein the pair of test terminals correspond to each other and branch from the wiring in opposite directions. The display device according to claim 9, comprising a corrosion-preventing conductive film covering all of the pair of test terminals. Forming wiring on the substrate and test terminals branched from the wiring at both ends of the wiring and integrated with the wiring; And And forming a film covering the wiring and the test terminal, the contact hole including a contact hole exposing a part of the test terminal. 12. The method of claim 11, The step of forming the wiring and the test terminal Forming a first test terminal branched from a first wiring and a first wiring formed in a first direction; And Forming a second wiring formed in a second direction and a second test terminal branched from the second wiring. The method according to claim 12, wherein, in the step of forming the first wiring and the first test terminal, the first wiring, the first test terminal, the third wiring parallel to the first wiring, And a third test terminal formed on the second insulating film. 12. The method of claim 11, further comprising: forming a corrosion-preventing conductive film covering a pixel electrode to which a signal is applied through the wiring and a test terminal exposed through the contact hole. 12. The method of claim 11, wherein forming the film comprises: Forming an inorganic film covering the wiring and the test terminal; And And removing an inorganic film corresponding to a part of the test terminal and a part of the test terminal. A test terminal which is branched from the wiring at both ends of the wiring and which is formed integrally with the wiring, and a contact hole which covers the wiring and the test terminal and exposes a part of the test terminal, Electrically connecting a terminal electrically connected to the measuring instrument to the test terminal in a display including a membrane; Applying an electrical signal to the wiring through the terminal; And And measuring an electrical signal passing through the wiring by the measuring device. 17. The method of claim 16, wherein the electrical characteristic is at least one of resistance, disconnection of wires, and capacitance. The method according to claim 16, wherein, in the step of applying the electrical signal, a current is applied to the wiring, the voltage of which varies with time, and the electrical signal passing through the wiring is measured. A method for examining an electrical characteristic of a display device that measures the intensity of a current according to a change in time. The method according to claim 16, wherein, in the step of applying the electrical signal, an electrical signal having a predetermined amplitude and a predetermined frequency is applied to the wiring, and in the step of measuring an electrical signal passing through the wiring, A method for examining the electrical characteristics of a display device for measuring amplitude and frequency of an electrical signal.

Images