KR101392621B1 - Stripper composition for removal photoresist residue and stripping method of photoresists using the same - Google Patents

Abstract

The present invention relates to a composition comprising (A) an organic sulfonic acid compound, (B) one or more aliphatic hydroxycarboxylic acid compounds selected from the group consisting of glycolic acid, gluconic acid, citric acid and salts thereof, (C) (D) a fluorine compound, and (E) water, and does not contain an amine, and a peeling method using the peeling liquid composition. According to the present invention, in the manufacturing process of a semiconductor device and a flat panel display device, in order to peel off the photoresist residue including curing and / or altered photoresist that may occur during the ashing process, There is provided a peeling liquid composition for removing photoresist residues which can be easily removed by a deposition method or a spraying method and is excellent in corrosion prevention effect on a metal film and an insulating film which are exposed to the peeling liquid composition, and a peeling method using the same.

An organic sulfonic acid compound, a hydroxycarboxylic acid compound, a water-soluble organic solvent,

Description

TECHNICAL FIELD The present invention relates to a peeling liquid composition for removing photoresist residues and a peeling method using the same.

In removing the photoresist residues including cured and / or altered photoresist remaining on a substrate subjected to etching and ashing during the manufacturing process of a semiconductor device or a flat panel display device, To a removing liquid composition for removing photoresist residue which is effectively removed without corrosion of a lower metal film or an insulating film exposed to the liquid composition, and a peeling method using the same.

The semiconductor device and the flat panel display device are manufactured by a process including the steps of forming a metal film or an insulating film, forming a photoresist, exposing the mask pattern to a photoresist, etching the film along the pattern, Including the peeling step. In the peeling step, the photoresist applied on the wafer or the substrate is removed by wet ashing or dry ashing. After such wet ashing or dry ashing processes, some altered and / or cured photoresist residues and the like will be present. If the modified and / or cured photoresist is not completely removed, the photoresist residue may act as a factor of shorting or breaking of the wiring in a subsequent process, which may cause a decrease in the yield of production.

To overcome this problem, residual and / or cured photoresist remaining after the ashing process has been removed through a wet process. The removal solution composition used for removing the photoresist in the above-mentioned wet process may be a combination of [amine + organic solvent + corrosion inhibitor], [acid + organic acid salt or inorganic acid salt + water] or [fluorine compound + quaternary ammonium compound + water ], [Fluorine compound + quaternary ammonium compound + organic solvent + water].

For example, U.S. Patent No. 4,617,251 discloses a process for the preparation of a compound of formula (I) wherein a specific amine compound [eg, 2- (2-aminoethoxy) ethanol, 2- (NMP), tetrahydrofurfuryl alcohol, dimethyl glutarate, sulfolane, gamma-butyrolactone (GBL), N, N-dimethylacetamide, and mixtures thereof. Discloses a positive photoresist stripper composition. Also, U.S. Patent No. 5,279,771 discloses a stripping composition comprising a hydroxylamine, an alkanolamine and optionally a polar solvent.

However, the above-mentioned amine-based stripping solution has serious problems such as the plasma etching, the residual polymer after the high-temperature ashing, the complete removal of the cured photoresist after the ion implantation, and the corrosion of the metal film such as aluminum.

Korean Patent Laid-Open No. 10-2004-75058 discloses a composition further comprising a corrosion inhibitor in a) a water-soluble organic solvent, b) a sulfonic acid or a corresponding salt thereof, and c) water. Korean Patent Laid-Open No. 10-2006-98333 also discloses a photoresist stripper composition containing at least one of a) an acetylenic alcohol compound and an organic sulfonic acid compound and b) a polyhydric alcohol and a derivative thereof . Korean Patent Laid-Open Publication No. 2004-0060601 proposes a composition for removing a resist for a copper wiring comprising an alkyl benzene sulfonic acid compound, a glycol ether compound, and a corrosion inhibitor including a triazole system and an antioxidant.

As an example of a composition to which a fluorine compound is added, a composition comprising [fluorine compound + ascorbic acid + polar organic solvent] has been reported in Japanese Patent Laid-Open No. 2001-5200, but the instability of the composition has been a problem. Korean Patent Laid-Open Publication No. 10-2006-50601 proposes a composition comprising a fluorine compound, a sulfonic acid group and water, but has a high content of fluorine added.

The organic peeling composition has a problem in that it has a long cleaning time after peeling and high environmental treatment cost, and also has a problem in terms of cost to apply to the single-wafer method in which the size of the wafer is increased. Therefore, there is a demand for a remover which is excellent in the removability of the photoresist, excellent in the effect of the system on the metal film and the insulating film, and more effective and inexpensive to shorten the cleaning process time.

As a result, the inventors of the present invention have found that when the substrate is treated with the release liquid composition of the present invention comprising an organic sulfonic acid compound, an aliphatic hydroxycarboxylic acid compound, a water-soluble organic solvent, a fluorine compound, and water, And the corrosion resistance of the metal film or the insulating film is low, thereby completing the present invention.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a peeling liquid composition for removing photoresist residues containing photoresist, which is hardened and / or altered after ashing, without corrosion of a metal film and an insulating film in a process of manufacturing semiconductor devices and flat panel display devices The present invention provides a peeling liquid composition for removing photoresist residues, which is effective for manufacturing a device including an aluminum film, and a peeling method using the same.

In order to achieve the above object,

(A) an organic sulfonic acid compound;

(B) one or more aliphatic hydroxycarboxylic acid compounds selected from the group consisting of glycolic acid, gluconic acid, citric acid and salts thereof;

(C) a water-soluble organic solvent;

(D) a fluorine compound; And

And (E) water. The present invention provides a peeling liquid composition for removing photoresist residues, which does not contain an amine.

Further, the present invention provides a photoresist stripping method using the stripper composition for removing the photoresist residue.

Hereinafter, the present invention will be described in detail.

The present invention relates to a method of manufacturing a semiconductor device and a method of manufacturing a flat panel display device, in which a residue of a photoresist, which is generated in a photolithography process, which is one of the processes of manufacturing a semiconductor device and a flat panel display device, The present invention provides a peeling liquid composition for removing photoresist residues, which can be effectively removed without corrosion of metals contained therein, and a peeling method using the same.

The present invention relates to a composition comprising,

(A) 0.1 to 20% by weight of an organic sulfonic acid compound;

(B) 0.1 to 15% by weight of one or more aliphatic hydroxycarboxylic acid compounds selected from the group consisting of glycolic acid, gluconic acid, citric acid and salts thereof;

(C) 1 to 50% by weight of a water-soluble organic solvent;

(D) Fluorine compound 0.0001 to 5% by weight; And

(E) a composition comprising a residual amount of water such that the total composition is 100% by weight, Characterized in that it does not contain an amine And removing the photoresist residue.

The organic sulfonic acid compound contained in the detachment liquid composition for removing photoresist residue of the present invention is an organic sulfonic acid or a salt thereof, and has a high dissociation constant or acidity when dissociated into an aqueous solution. Sulfuric acid is commonly used in the process of removing organic substances from semiconductor processes because sulfuric acid is highly acidic and has a strong ability to oxidize. That is, when dissolved in water, the amount of generated hydrogen ions is high, so that the hydrogen ion index is indicated to be small. Such a hydrogen ion, that is, an acid ion reacts with a hydrophobic photoresist as a polymer to convert it into a hydrophilic photoresist, and can act to relax the bond in the photoresist, and the relaxed photoresist can be modified by other functional groups It is easy to dissolve. Due to these properties, when an organic sulfonic acid having an acid dissociation constant similar to sulfuric acid, that is, an acidity, is used, the photoresist can be easily removed by strong acidity such as sulfuric acid. Accordingly, the photoresist modified layer and the sidewall protective deposited layer, which have been difficult to remove with the conventional peeling solution, can be removed together with the photoresist.

The organic sulfonic acid compound

(a) an alkylsulfonic acid having 1 to 4 carbon atoms;

(b) an arylsulfonic acid having 6 to 8 carbon atoms;

(c) a heteroarylsulfonic acid having 5 to 7 carbon atoms;

(d) an alkylbenzenesulfonic acid having 7 to 18 carbon atoms; And

(e) salts thereof, or a mixture of two or more thereof. The organic sulfonic acid compound may have a substituent, and the substituent may be a mercapto group, an amino group or a fluoro group.

The alkylsulfonic acid having 1 to 4 carbon atoms is preferably a mixture of at least one member selected from the group consisting of methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid and aminomethanesulfonic acid.

The arylsulfonic acid having 6 to 8 carbon atoms is preferably a mixture of at least one member selected from the group consisting of benzenesulfonic acid and phenolsulfonic acid.

The heteroarylsulfonic acid having 5 to 7 carbon atoms is preferably pyridine sulfonic acid.

The alkylbenzenesulfonic acid having 7 to 18 carbon atoms is preferably selected from the group consisting of dodecylbenzenesulfonic acid, toluenesulfonic acid (4-methylbenzenesulfonic acid), pyridinium p-toluenesulfonic acid, cresylsulfonic acid (methylphenolsulfonic acid), cumenesulfonic acid and xylenesulfonic acid It is preferable to use one kind or two or more kinds selected to be mixed.
In particular, the cresol sulfonic acid (methyl phenol sulfonic acid) may be 0-cresol sulfonic acid (2-methylphenol sulfonic acid), and the xylene sulfonic acid may be 2,5-xylene sulfonic acid and / or 2,4-xylene sulfonic acid.

In addition, camphorsulfonic acid and the like can be used.

Among the organic sulfonic acids listed above, one or more compounds selected from the group consisting of dodecylbenzenesulfonic acid, toluenesulfonic acid, cumenesulfonic acid, phenolsulfonic acid, aminomethanesulfonic acid, xylenesulfonic acid, camphorsulfonic acid, It is more preferable to use them in combination.

The amount of the organic sulfonic acid compound to be added is not particularly limited but may be increased or decreased depending on the object to be removed and the removal conditions, and is preferably 0.1 to 20% by weight, particularly preferably 0.5 to 10% by weight based on the total weight of the total composition . If the organic sulfonic acid compound is contained in an amount of less than 0.1% by weight based on the total weight of the total composition, removal of the photoresist residue is insufficient, and if it exceeds 20% by weight, it may cause corrosion of a metal film such as aluminum There is a problem that the manufacturing cost is increased.

The one or more aliphatic hydroxycarboxylic acid compounds selected from the group consisting of glycolic acid, gluconic acid, citric acid, and their salts, contained in the release liquid composition for removing the photoresist residue of the present invention, But also functions as a corrosion inhibitor for suppressing the corrosion of the metal film.

The amount of the aliphatic hydroxycarboxylic acid compound to be added is not particularly limited, but may be increased or decreased depending on the object to be removed and the removal conditions, and is preferably 0.1 to 15% by weight, particularly preferably 0.1 to 10% . When the aliphatic hydroxycarboxylic acid compound is contained in an amount of less than 0.1% by weight based on the total weight of the composition, it causes corrosion of a metal film such as aluminum. When the aliphatic hydroxycarboxylic acid compound is contained in an amount exceeding 15% by weight, There is a problem in that removal of the photoresist residue is inadequate.

The water-soluble organic solvent contained in the peeling liquid composition for removing the photoresist residue of the present invention is capable of dissolving the residues of the photoresist, thereby facilitating peeling and removal. Examples of the water-soluble organic solvent include amides, pyrrolidones, sulfoxides, polyhydric alcohols and derivatives thereof.

Examples of the amide include N, N-dimethylformamide, N-ethylformamide, N, N-ethylformamide, N-methylacetamide, N-diethylacetamide, and the like are preferably used in combination.

Examples of the pyrrolidone include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-hydroxyethyl-2-pyrrolidone and N-cyclohexyl- Or a mixture of two or more of them.

As the sulfoxides, it is preferable to use a mixture of at least one member selected from the group consisting of dimethyl sulfoxide, diethyl sulfoxide and the like.

Examples of the polyhydric alcohols and derivatives thereof include ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate , Ethylene glycol monobutyl ether acetate, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monomethyl ether acetate, diethylene glycol Glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, Dipropylene glycol monomethyl ether acetate, dipropylene glycol monopropyl ether acetate, diethylene glycol dimethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol monomethyl ether acetate, dipropylene glycol monomethyl ether acetate, Dipropylene glycol diethyl ether, dipropylene glycol dipropyl ether, dipropylene glycol dibutyl ether and the like, or a mixture of two or more thereof.

The blending amount of the water-soluble organic solvent is not particularly limited, but it can be increased or decreased depending on the subject to be removed and the removal conditions, and it can be preferably 1 to 50% by weight, particularly preferably 1 to 20% by weight based on the total weight of the whole composition have. When the water-soluble organic solvent is contained in an amount of less than 0.1% by weight based on the total weight of the total composition, it is difficult to expect a photoresist dissolving effect by the water-soluble organic solvent. When the content exceeds 50% by weight, There is a problem that removal of the photoresist residue is inadequate.

The fluorine compound contained in the release liquid composition for removing the photoresist residue of the present invention plays a role in promoting the removal of the hardened and deteriorated photoresist remaining on the substrate. It also serves to remove contaminants, such as fine dust, on the substrate.

The fluorine compound is not particularly limited, but is preferably a mixture of at least one compound selected from the group consisting of hydrofluoric acid, ammonium fluoride, ammonium fluoride, and boron fluoride acid.

The amount of the fluorine compound to be added is not particularly limited but may be varied depending on the object to be removed and the removal conditions, and is preferably 0.0001 to 5% by weight, particularly preferably 0.001 to 1% by weight based on the total weight of the composition . When the fluorine compound is contained in an amount of less than 0.0001% by weight based on the total weight of the total composition, removal of the photoresist residue is unreasonable and if it exceeds 5% by weight, a metal film such as aluminum, an insulating film such as SiO ₂ or SiNx Which may be a cause of corrosion.

Water contained in the stripper solution composition for removing photoresist residue of the present invention is not particularly limited, but it is preferable to use deionized water having a specific resistance value of 18 M? / Cm or more as water for semiconductor processing. The water content can be adjusted according to the content of the other constituents.

The removing solution composition for removing the photoresist residue of the present invention may be prepared by mixing the above-mentioned compounds in an appropriate amount, and the mixing method is not particularly limited and various known methods can be applied.

The pH of the peeling liquid composition for removing photoresist residue produced by the present invention is preferably adjusted to 1 to 7. When the stripper composition for removing the photoresist residue is less than pH 1, corrosion of metallic film such as aluminum is intensified, and when the pH is more than 7, the photoresist residue removal effect is significantly reduced.

The peeling liquid composition for removing the photoresist residue of the present invention can be used as a photoresist residue containing a photoresist hard baking, plasma etching, curing after high temperature ashing and / or altered photoresist in the manufacturing process of a semiconductor device or a flat panel display device It can be used in a peeling process for effectively removing water.

The detachment liquid composition for removing photoresist residues of the present invention is a water system type which can increase the activity of a compound in a composition to remove photoresist residues and is more cost effective than an organic release agent Do. Compared with the organic peeling liquid, since the composition is low in viscosity similar to water and can be sprayed, it is applicable to a sheet-like method. Therefore, the peeling liquid composition for removing photoresist residue of the present invention can be applied to both a batch method for peeling a plurality of wafers at a time or a single wafer processor for peeling a wafer at a time.

The present invention is also characterized by the use of the release liquid composition of the present invention and is a photoresist material that can effectively remove photoresist residues including hard baking, plasma etching, curing after hot etching and / A resist stripping method is provided.

In the photoresist stripping method,

(I) forming a photoresist film on a substrate;

(II) selectively exposing the photoresist film;

(III) developing the exposed photoresist film to form a photoresist pattern;

(IV) etching the substrate using the photoresist pattern as a mask; And

(V) subjecting the photoresist pattern to ashing; And

(VI) peeling the photoresist residue after the ashing from the substrate using the peeling liquid composition for removing the photoresist residue of the present invention.

In addition, in the removing method of the present invention, a dry etching process such as an etchback process or a CMP (Chemical Mechanical Polishing) process is performed without performing a photoresist pattern forming process using a mask, And a method of peeling the film with the release liquid composition of the present invention.

The photoresist film formation, exposure, development, etching, and ashing processes in the peeling method can be performed by a method commonly known in the art, and are not particularly limited. A photoresist film containing a photoresist that is hardened or modified with a polymer If the substrate on which the resist residues are present and the peeling liquid composition can be brought into contact with each other, good peeling results can be obtained.

The peeling method may be a deposition method, a spraying method, or a deposition and spraying method. In the case of peeling by immersion, spraying or immersion and spraying, the temperature for peeling is usually from 10 to 100 캜, preferably from 20 to 80 캜, and the immersion, spraying or immersion and spraying time is usually from 30 seconds to 40 minutes, Preferably 1 minute to 20 minutes, but is not strictly applied in the present invention, and can be modified in a condition that is easy and suitable for a person skilled in the art.

The stripping liquid composition for removing the photoresist residue and the stripping method using the same according to the present invention can be used for manufacturing semiconductor devices and flat panel display devices and can be used for metal wiring such as aluminum and a method for insulating films such as SiO ₂ or SiN x There is an advantage of goodness.

The stripper composition for removing photoresist residue of the present invention can effectively remove photoresist residues containing photoresist hardened and / or altered by hard baking, plasma etching, hot ashing during the manufacturing process of semiconductor devices and flat panel display devices And the corrosion of the metal film and the insulating film can be prevented. Particularly, the release liquid composition of the present invention is suitable for a production process of an aluminum wiring and an aluminum via hole and the like, and deionized water cleaning is easy, and the cleaning time can be shortened.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the present invention is not limited by the following examples and comparative examples, and various modifications and changes may be made.

Example  1 to 9 and Comparative Example  1 to 5

The photoresist stripping solution compositions of Examples 1 to 9 and Comparative Examples 1 to 5 were prepared by mixing with the compositions and contents shown in Table 1 below.

Sulfonic acid compound
(weight%) Aliphatic
Hydroxy
Carboxylic acid
(weight%) receptivity
Organic solvent
(weight%) Fluorine compound
(weight%) etc
(weight%) water

(weight%) Example 1 TSA 2 HC-3 0.5 NMP 7 NH ₄ F 0.005 - - Balance Example 2 TSA 5 HC-2 One NMP 5 FBA 0.0005 - - Balance PSA 5 Example 3 TSA 10 HC-1 5 NMP 3 FBA 0.001 - - Balance Example 4 TSA 2 HC-3 5 BDG 5 FBA 0.001 - - Balance PSA 2 Example 5 TSA 2 HC-3 5 NMP 5 FBA 0.001 - - Balance Example 6 TSA 2 HC-3 5 BDG 5 FBA 0.001 - - Balance Example 7 TSA 5 HC-3 5 NMP 5 FBA 0.001 - - Balance Example 8 TSA 5 HC-3 5 BDG 10 FBA 0.001 - - Balance Example 9 PSA 5 HC-3 5 DMSO 5 FBA 0.001 - - Balance Comparative Example 1 TSA 2 - - NMP 5 - - Balance Comparative Example 2 TSA 25 HC-2 5 NH ₄ F 0.1 - - Balance Comparative Example 3 - - HC-3 3 BDG 10 - - TMAH 2 Balance Comparative Example 4 TSA 5 - - FBA 0.001 H ₂ SO ₄ 5 Balance Comparative Example 5 TSA 5 - - BDG 20 NH ₄ F 0.01 - - Balance

Note) TSA: toluene sulfonic acid

PSA: phenolsulfonic acid

HC-1: glycolic acid

HC-2: Citric acid

HC-3: gluconic acid

FBA: fluoroboric acid

TMAH: tetramethylammonium hydroxide

NMP: N-methyl-2-pyrrolidone

BDG: diethylene glycol monobutyl ether

DMSO: dimethylsulfoxide

Test Example : Peelability  And Improvisation  exam

A specimen having an Al metal wiring in an SiO ₂ insulating film and adhered to the metal film and the insulating film with deteriorated photoresist residue and polymer residue generated after plasma etching or high temperature ashing was applied to a peeling liquid Comparative Example) After each sample was immersed for 20 minutes, the specimen was taken out from the peeling solution, rinsed with ultrapure water for 1 minute, and dried using nitrogen gas. The removal of residual photoresist and polymer after dry or high temperature ashing using a scanning electron microscope and the corrosion resistance of the metal film and insulating film exposed to the chemical solution were evaluated. The peelability and corrosion resistance were evaluated according to the following criteria, and the results are shown in Table 2 below.

[Evaluation criteria for peelability]

⊚: very good, ∘: good, △: presence of some residues, X: impossible to remove residues

[Evaluation Criteria for Aluminum Anchoring Properties]

?: No corrosion,?: Almost no corrosion,?: Partial corrosion, Change in surface roughness, X: Etching

Peelability Al corrosion resistance Example 1 ◎ ◎ Example 2 ◎ ○ Example 3 ◎ ○ Example 4 ◎ ◎ Example 5 ◎ ○ Example 6 ◎ ○ Example 7 ◎ ◎ Example 8 ○ ○ Example 9 ○ ○ Comparative Example 1 ◎ △ Comparative Example 2 ○ X Comparative Example 3 ◎ X Comparative Example 4 ◎ X Comparative Example 5 ◎ X

As can be seen from the results shown in Table 2, the peelability of the photoresist residues of Examples 1 to 9, which are compositions containing the organic sulfonic acid, the aliphatic hydroxycarboxylic acid compound, the water-soluble organic solvent, the fluorine compound and water, It was confirmed that the corrosion resistance was good.

Claims (11)

For the total weight of the composition, (A) 0.1 to 20% by weight of an organic sulfonic acid compound; (B) 0.1 to 15% by weight of one or more aliphatic hydroxycarboxylic acid compounds selected from the group consisting of glycolic acid, gluconic acid, citric acid and salts thereof; (C) 1 to 50% by weight of a water-soluble organic solvent; (D) Fluorine compound 0.0001 to 5% by weight; And (E) a residual amount of water so that the total weight of the entire composition is 100% by weight And removing the photoresist residue. delete The organic electroluminescent device according to claim 1, wherein the organic sulfonic acid compound (a) an alkylsulfonic acid having 1 to 4 carbon atoms; (b) an arylsulfonic acid having 6 to 8 carbon atoms; (c) a heteroarylsulfonic acid having 5 to 7 carbon atoms; (d) an alkylbenzenesulfonic acid having 7 to 18 carbon atoms; And (e) salts thereof Wherein the photoresist residue is at least one compound selected from the group consisting of a photopolymerization initiator and a photopolymerization initiator. [Claim 4] The method according to claim 3, wherein the alkyl sulfonic acid having 1 to 4 carbon atoms is at least one compound selected from the group consisting of methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid and aminomethanesulfonic acid. And The peeling liquid composition for removing photoresist residue according to claim 3, wherein the arylsulfonic acid having 6 to 8 carbon atoms is at least one compound selected from the group consisting of benzenesulfonic acid and phenolsulfonic acid. The peeling liquid composition for removing photoresist residue according to claim 3, wherein the heteroarylsulfonic acid having 5 to 7 carbon atoms is pyridine sulfonic acid. [Claim 4] The method according to claim 3, wherein the alkylbenzenesulfonic acid having 7 to 18 carbon atoms is selected from the group consisting of dodecylbenzenesulfonic acid, toluenesulfonic acid (4-methylbenzenesulfonic acid), pyridinium paratoluenesulfonic acid, cresylsulfonic acid (methylphenolsulfonic acid), cumenesulfonic acid and xylenesulfonic acid Wherein the photoresist residue is at least one compound selected from the group consisting of a photopolymerization initiator and a photopolymerization initiator. The photoresist film according to claim 1, wherein the water-soluble organic solvent is at least one compound selected from the group consisting of amides, pyrrolidones, sulfoxides, polyhydric alcohols and salts thereof. Wherein the detacking liquid composition for removing water comprises: The removing solution composition for removing photoresist residue according to claim 1, wherein the fluorine compound is at least one compound selected from the group consisting of hydrofluoric acid, ammonium fluoride, ammonium fluoride, and boron fluoride acid. The peeling liquid composition for removing photoresist residue according to any one of claims 1 and 3 to 9, wherein the pH of the peeling liquid composition for removing the photoresist residue is 1 to 7. (I) forming a photoresist film on a substrate; (II) selectively exposing the photoresist film; (III) developing the exposed photoresist film to form a photoresist pattern; (IV) etching the substrate using the photoresist pattern as a mask; And (V) subjecting the photoresist pattern to ashing; And (VI) separating the photoresist residue after the ashing from the substrate using the peeling liquid composition for removing the photoresist residue according to any one of claims 1 and 3 to 9 Photoresist stripping method.