KR101385952B1 - Transparent electrode structure for touch screen applying for a vehicle - Google Patents
Transparent electrode structure for touch screen applying for a vehicle Download PDFInfo
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- KR101385952B1 KR101385952B1 KR1020130047731A KR20130047731A KR101385952B1 KR 101385952 B1 KR101385952 B1 KR 101385952B1 KR 1020130047731 A KR1020130047731 A KR 1020130047731A KR 20130047731 A KR20130047731 A KR 20130047731A KR 101385952 B1 KR101385952 B1 KR 101385952B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
Abstract
The present invention provides a target on a substrate, which is 60 to 80 kHz thick Y 2 O 3 , 45 to 65 kHz thick TiO 2 , 553 to 573 s thick SiO 2 , 127 to 147 s thick TiO 2 , 279 to 299 s thick SiO 2 , and a touch screen transparent electrode structure applied to a transport device, characterized in that obtained by sequentially stacking ITO of 240 to 260 Å thickness by an electron beam deposition method, the transparent electrode structure for a touch screen applied to the transport device panel By forming the transmittance of the transparent electrode closest to the transmittance of the glass or polymer film, which is a basic member of the fabrication, the transparency is improved so that it is not visible to the naked eye after forming the pattern of the transparent electrode, and the oxidation of the short wavelength band (450 nm) By controlling the absorption coefficient of indium tin (ITO), yellowing of ITO is suppressed, and after assembling with the light source, the transmittance of the display light source itself is reduced or color Improve the problems, and, Y 2 O 3, by constituting the laminated material of the structure has excellent fire resistance and chemical resistance, and is advantageous in response to environmental changes. That is, the transparent electrode structure for the touch screen applied to the transport apparatus according to the present invention may improve visibility, fire resistance, and chemical resistance of the final panel product.
Description
The present invention relates to a transparent electrode structure for a touch screen applied to a transportation device, and more specifically, even if a yellowing phenomenon is lowered transparency, excellent fire resistance, chemical resistance and flexibility to minimize the damage of the transparent electrode in the external environment The present invention relates to a transparent electrode structure for a touch screen applied to a transportation device that can be applied to a curved touch screen.
The touch panel is a transparent panel that senses the pressure on the transparent member (resistive film type) or the change in the capacitance of a conductor such as a finger (electrostatic capacitance type) to recognize a point on the display through direct touch, In order to manufacture a panel, a transparent electrode having a pattern formed on a member such as glass or plastic is manufactured and used. A touch panel module having the transparent electrode formed therein and a control panel connected to the control panel is attached to the top surface of the final display to manufacture a touch panel display.
However, the above-described touch panel transparent electrode structure for a capacitive touch panel of the conventional touch panel has problems such as a decrease in transparency due to yellowing caused by ultraviolet rays, breakage of the transparent electrode when curved surfaces are applied, and deformation of the substrate at high temperature, high humidity or low temperature. Therefore, there has been a problem that it is difficult to apply to a vehicle such as a car, and to solve the above problems, research and development has been made on various transparent electrode structures for touch panels applicable to a vehicle such as a car.
Meanwhile, a transparent conductive thin film is fabricated on a transparent member to form a touch panel, and a pattern is formed to give a role of an electrode while maintaining transparency. The transparent electrode is known as follows. have.
The transparent electrode is divided into metal mesh wire, nano silver wire, CNT ball, graphene, etc. according to the main material, and transparent conductive oxide (TCO) is used. It is also manufactured by dry deposition.
In recent years, the most common method of manufacturing a transparent electrode is a deposition method using TCO. At this time, a transparent conductive material is thinned on a member to manufacture a transparent electrode. The main manufacturing methods are sputtering and electron beam deposition (dry deposition). Electron Beam Evaporation, etc., and the wet method includes spray, dipping, spin coating.
The transparent conductive sheet thus prepared is completed through a patterning process so that a transparent electrode is formed. The patterning process is largely laser etching, dry etching, photolithography or etching. The pattern is completed using etching paste and used as a transparent electrode.
Currently, the most widely used technique for manufacturing a transparent electrode is a technique for forming a transparent electrode by thinning indium tin oxide (ITO) using sputtering, and a schematic diagram of a transparent electrode manufacturing equipment using sputtering is shown in FIG. 1.
In the case of the sputtering process, the target material is collided with the ionization energy (mainly Ar + ion) of the gas in a glow discharge state by using DC or RF power to deposit atoms colliding with the target on a member such as glass or PET film Technology. At this time, in order to improve the transparency of the transparent electrode, the internal temperature of the reaction chamber may be raised to increase the crystallization of the ITO thin film, the partial pressure of oxygen (O 2 ) which is a reactive gas may be adjusted, The transparency of the transparent conductive thin film is improved by forming a conductive thin film and controlling the refractive index of each thin film layer.
In general, the member used for the transparent conductive sheet is glass, and the transmittance is about 92% on average. On the other hand, as an actual manufacturing example, the transmittance of a transparent conductive sheet made of ITO having a surface resistance of 150 kW / sq shows a transmittance of 85% or less on average, and especially a short wavelength band (500 nm or less due to the intrinsic absorption coefficient of ITO). As the decrease in the transmittance of () is remarkable, a yellowing phenomenon occurs. In fact, when the pattern is formed from the transparent conductive sheet thus formed and the transparent electrode is formed, the pattern of the transparent electrode and the transmittance difference and the reflectance difference between the glass as members are generated. Finally, when the panel is attached to the display after manufacturing the panel, the pattern of the view area affects the transparency, causing problems such as visual quality and color deviation.
In this case, the transmittance of the short wavelength band (500 nm or less) is relatively low compared to 92% of the transmittance of the glass member, which is transparent, but the color of the surface itself becomes dark compared to the bare state of the glass member. Further, the decrease in transmittance in the short wavelength band tends to be intensified.
On the other hand, in the case of the sputtering process, a roll type or an inline type continuous process may be used in some cases. Both the continuous process and the single bath type bath type have an oxide film other than ITO to improve the transparency of the transparent electrode. Attempt to improve transparency by constructing one or two thin film layers.
In general, Nb 2 O 5 is the most widely known oxide material used for improving the transparency of ITO thin films. In addition, oxides such as TiO 2 and SiO 2 may be used. However, due to the characteristics of the sputtering process, there is a limitation in the free choice of the oxide material in the process of sputtering the target. Further, due to the arrangement of the target and the problem of inducing colliding elastic atoms to the substrate, There is a limit to the composition of the composite thin film layer.
On the other hand, Korean Unexamined Patent Publication No. 2008-0084885 discloses an ITO film for a touch screen panel formed by sputtering or a physical / chemical method, and a method for manufacturing a touch screen panel using the ITO film. However, .
Therefore, the development of a method for manufacturing a variety of touch panel transparent electrode structures applicable to a vehicle, such as a vehicle having a high transparency and excellent fire resistance, chemical resistance and flexibility in a transparent electrode structure for a touch panel applicable to a vehicle, such as automobiles It is necessary.
The present invention has been made to solve the above situation, it is possible to significantly improve the visibility of the final panel product by improving the transparency of the transparent electrode structure for the touch panel, and to increase the flexibility of the transparent electrode structure for the touch panel curved surface The present invention is applicable to a panel product having a shape, and an object thereof is to provide a variety of touch panel transparent electrode structures applicable to a vehicle or the like in which the degeneration of the touch electrode transparent electrode structure is minimized even at high or low temperatures.
In order to achieve the above object,
Targets on the substrate are 60 to 80 Å thick Y 2 O 3 , 45 to 65 Å thick TiO 2 , 553 to 573 Å thick SiO 2 , 127 to 147 Å thick TiO 2 , 279 to 299 Å thick SiO 2 , and 240 Provided is a transparent electrode structure for a touch screen applied to a transport device, characterized in that obtained by sequentially stacking to ITO of 260 Å thickness by electron beam deposition.
More specifically, the present invention is the 70 Å Y 2 O 3 , 55 Å thick TiO 2 , 563 SiO thick SiO 2 , 137 Å thick TiO 2 , 289 Å thick SiO 2 , and 250 각각 thick ITO, respectively, by electron beam deposition Provided is a transparent electrode structure for a touch screen applied to a transportation device, characterized in that obtained by sequentially stacking.
The substrate may be selected from glass or film, and the glass substrate may be selected from soda lime glass, low iron glass, non-alkali glass or tempered glass, and the film substrate may be polyethylene terephthalate (PET) or polydimethylsiloxane 0.0 > (PDMS). ≪ / RTI >
The transparent electrode structure for the touch screen applied to the transportation device according to the present invention forms the transmittance of the transparent electrode most closely to its own transmittance of the glass or polymer film, which is a basic member of panel manufacturing, and then visually after forming the pattern of the transparent electrode. Improve transparency to avoid identification, and control the absorption coefficient of indium tin oxide (ITO) in the short wavelength band (450nm) to suppress yellowing of ITO and reduce transmittance or color deviation of the display light source itself after assembly with the light source. In addition, Y 2 O 3 is composed of a laminated material of the structure, which is excellent in fire resistance and chemical resistance, and is advantageous in responding to external environmental changes. That is, the transparent electrode structure for the touch screen applied to the transport apparatus according to the present invention may improve visibility, fire resistance, and chemical resistance of the final panel product.
1 is a schematic view of a sputtering apparatus used in a conventional sputtering method,
FIG. 2 is a schematic view of an electron beam vapor deposition apparatus used in the present invention,
3 and 4 show the refractive index of each wavelength band of the TiO 2 thin film layer and the SiO 2 thin film layer of the transparent electrode structure for a touch screen applied to the transport apparatus according to the present invention,
Figure 5 is the analysis of the transmittance for each wavelength band of the transparent electrode structure for the touch screen applied to the transport apparatus according to the present invention,
6a and 6b are the color and total reflection of the surface of the touch screen panel using the transparent electrode structure for the touch screen applied to the transport apparatus according to the present invention, respectively,
FIG. 7 is a graph illustrating analysis of transmittance for each wavelength band of a transparent electrode according to a conventional sputtering method.
8A and 8B illustrate surface color and total reflection of a touch screen panel using a transparent electrode according to a conventional sputtering method, respectively.
In the present invention, in order to improve the problem of the transparent electrode manufacturing method using sputtering to manufacture a transparent electrode including a multi-layered thin film layer using the electron beam deposition method, the electron beam deposition method is a thin film having a more dense structure and excellent durability than the sputtering method Although the selection of the thin film material is limited and the number of layers of the thin film layer is limited due to the process characteristics, there is an undesirable disadvantage in constructing the refractive index matching layer for improving the transparency of the transparent electrode. Provided is a transparent electrode structure for a touch screen applied to a transport device.
Therefore, it is possible to select a material more freely than the conventional sputtering process, to change the temperature condition of the chamber freely, to control the thickness of the thin film easily, and to configure the multilayer thin film of three or more layers. To prepare a transparent electrode structure for a touch screen.
E-beam deposition is basically a combination of 6 to 12 or 13 composite materials depending on the arrangement of the pockets. Since it is evaporation method due to the thermal energy of the electron beam, it is easy to control conditions such as deposition rate and oxygen partial pressure during deposition, In order to compensate the disadvantage that the durability of the thin film and the density of the thin film are inferior compared with the sputtering process, an ion gun of 4 Kw capacity is used as an auxiliary ion gun, .
The electron beam deposition equipment used in the present invention is shown in FIG.
In the electron beam deposition equipment, the vacuum chamber maintains a vacuum of 3 x 10 -5 to 7 x 10 -5 Torr. The target to be deposited is provided in an ingot state, and there are one or more electron guns in the vacuum chamber, each of which is supplied with power of several tens of kW or less. The generated electron beam is accelerated to high kinetic energy and aimed at the ingot. When the voltage is raised, 85% of the kinetic energy of the electron beam is converted into thermal energy and collides toward the surface of the ingot. This increases the surface temperature of the ingot where the impact occurred and later vaporizes as it melts into a liquid state. The ingot itself is covered with a crucible, which cools the part covered by the coolant circulation. By placing the ingot upside down, the liquid level dissolved in the liquid state is kept constant. The number of ingots used depends on the target to be applied.
In the present invention, as shown in Figs. 3 and 4, the glass member and the glass member during the deposition of a single thin film of ITO, which is a relatively high refractive index material, using a TiO 2 and SiO 2 oxide film having a low absorption coefficient in the visible light region and a refractive index for each wavelength band as shown in the figure, respectively. Due to the difference in refractive index, the reflectivity is increased, and thus, the process is performed to compensate for the prior art in which the transmittance is reduced to about 85% without maintaining the 92% transmittance of the member state.
Therefore, in the present invention, the refractive index matching of the low refractive index oxide SiO 2 and the relatively high refractive index material TiO 2 is performed, and the increase in the absorption coefficient of the short wavelength band of the ITO thin film is adjusted by adjusting the transmittance, the reflectance and the absorption coefficient of each layer. It is.
In addition, in the present invention, durability, heat resistance, and chemical resistance were increased by forming a seed layer of Y 2 O 3 , which is a medium refractive index oxide, which is stronger in an external use environment.
That is, in the present invention, a glass substrate or a PET substrate is used as a substrate, and as targets, Y 2 O 3 having a thickness of 60 to 80 μs, TiO 2 having a thickness of 45 to 65 μs and SiO 2 , 127 having a thickness of 553 to 573 μs, respectively, on the substrate. TiO 2 to 147 Å thick, SiO 2 to 279 to 299 및 thick, and ITO having 240 to 260 Å thick were sequentially laminated by electron beam deposition to prepare a transparent electrode structure for a touch screen applied to a transport apparatus. More preferably, 70 Å thick Y 2 O 3 , 55 Å thick TiO 2 , 563 Å thick SiO 2 , 137 Å thick TiO 2 , 289 Å thick SiO 2 , and 250 Å thick ITO are sequentially deposited by electron beam deposition. To manufacture a transparent electrode structure for a touch screen applied to a transport device.
If a target outside the thickness range of each target is used, it may fail to improve the transparency of the transparent electrode, thereby causing a problem that sufficient visibility cannot be obtained in the final product.
Of course, in addition to the two materials disclosed above, Mg 2 may be used as a low refractive index material, and as a high refractive index material, ZrO 2 , Al 2 O 3 , Y 2 O 3 It is apparent that the transparent electrode structure can be freely manufactured according to the refractive index matching using the light source.
In the present invention, in order to improve the density of the thin film during the electron beam deposition, the vacuum of the vacuum chamber is maintained at a vacuum of 3 × 10 -5 to 7 × 10 -5 Torr, preferably 3.5 × 10 -5 Torr, The autoclave was started to evaporate, and a pressure of 6.5 x 10 -5 Torr was maintained during deposition of TiO 2 using an APC (Auto Pressure Controller) to prevent oxygen deficiency in the chamber over time. At the same time, , The ITO thin film was grown in an oxygen-assisted atmosphere and the chamber temperature was maintained at 200 ° C, thereby improving the durability, denseness, and crystallization of the ITO thin film, thereby maintaining the surface resistance at 150 Ω / Sq or less.
In addition, as a result of measuring the transmittance for each wavelength band in the transparent electrode structure for a touch screen applied to the transport apparatus according to the present invention, as shown in Figure 5, Figure 6a and Figure 6b obtained a transmittance of 90% for each wavelength band and the short wavelength was a problem The transmittance of the band (500 nm or less) was also adjusted to about 90% to solve the problem of transparency and yellowing of ITO. Therefore, when manufacturing a touch screen panel, there is an advantage of securing transparency and excellent visibility as compared with the existing process.
On the other hand, based on the automotive quality standards, the external environmental evaluation items of the transparent electrode structure for a touch screen applied to the transport apparatus according to the present invention are shown in Table 1 below.
500 cycles
In addition, the results for the external environmental evaluation items of the transparent electrode structure for a touch screen applied to the transport apparatus according to the present invention are shown in Table 2 below.
As shown in Table 1 and Table 2, the results of the high temperature operation test and the low temperature operation test of the environmental operation item were performed by the thermo-hygrostat at the above conditions, respectively, and the results of the high temperature operation test and the low temperature operation test of the environmental operation item were both good. And it was found.
In addition, as a result of the high temperature leaving test, the high temperature high humidity leaving test and the low temperature leaving test of the environmental preservation items, respectively, under the above conditions, the high temperature leaving test, the high temperature high humidity leaving test and the low temperature leaving test were also good. did. On the other hand, the thermal shock test of the environmental preservation item was carried out by the thermal shock tester under the above conditions, and the thermal shock test result of the environmental preservation item was also good.
As can be seen from the above test results, the transparent electrode structure for the touch screen applied to the transport apparatus according to the present invention was found to have almost no substrate modification or transparent electrode breakage even at constant high and low temperatures or rapid temperature changes.
On the other hand, the transparent electrode was prepared through a conventional sputtering process and compared with the transparent electrode according to the present invention. That is, the substrate is used as a glass substrate, and 100 Å of Nb 2 O 5 , 350 Å of SiO 2, and 250 Å of ITO are sequentially stacked on the target, and DC and RF mixed power is used as the applied power. A resistance of 150 kW / Sq was prepared for the transparent electrode.
7, 8a, and 8b, the sputtering conventional method shows a transmittance improvement of nearly 90% for each wavelength band compared to the transparent electrode by the ITO single layer, but the transmittance of the band of 450 nm or less is drastically reduced. At 400nm, the transmittance of about 85% is secured, so that the visual observation of the touch screen panel's transparency and the total reflection pattern can be observed with the naked eye, which may affect visual quality.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.
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| KR1020130047731A KR101385952B1 (en) | 2013-04-29 | 2013-04-29 | Transparent electrode structure for touch screen applying for a vehicle |
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| KR1020130047731A KR101385952B1 (en) | 2013-04-29 | 2013-04-29 | Transparent electrode structure for touch screen applying for a vehicle |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110034891A (en) * | 2009-09-29 | 2011-04-06 | (주)넥스디스플레이 | Resistive type touch screen process with decoration by using vacuum deposition method |
| KR101045026B1 (en) | 2010-11-12 | 2011-06-30 | (주)비엠씨 | Transparent conductive multilayered film, producing method of the same, and touch panel containing the same |
| KR20120021765A (en) * | 2010-08-16 | 2012-03-09 | 주식회사 엘지화학 | Transparent conductive film having excellent optical properties and method for producing the same |
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- 2013-04-29 KR KR1020130047731A patent/KR101385952B1/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110034891A (en) * | 2009-09-29 | 2011-04-06 | (주)넥스디스플레이 | Resistive type touch screen process with decoration by using vacuum deposition method |
| KR20120021765A (en) * | 2010-08-16 | 2012-03-09 | 주식회사 엘지화학 | Transparent conductive film having excellent optical properties and method for producing the same |
| KR101045026B1 (en) | 2010-11-12 | 2011-06-30 | (주)비엠씨 | Transparent conductive multilayered film, producing method of the same, and touch panel containing the same |
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